VS-E5PX3006L-N3

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Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt® G5
FEATURES
Base cathode
• Hyperfast and optimized Qrr
2
• Best in class forward voltage drop and switching
losses trade off
2
1 • Optimized for high speed operation
• 175 °C maximum operating junction temperature
1 3
3 Anode • Polyimide passivation
Cathode
TO-247AD 2L
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS

IF(AV) 30 A Featuring a unique combination of low conduction and
VR 600 V switching losses, this rectifier is the right choice for soft
VF at IF at 125 °C 1.3 V switched and resonant converters, as well as medium
trr (typ.) 22 frequency hard switching converters. This device is
IFSM 310 specifically designed to improve efficiency of high speed
TJ max. 175 °C LLC output rectification stages of EV / HEV battery charging
stations and high frequency stages of UPS applications.
Package TO-247AD 2L
Circuit configuration Single

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage VRRM 600 V
Average rectified forward current IF(AV) TC = 117 °C, D = 0.50 30
Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms, sine wave 310 A
Repetitive peak forward current IFRM TC = 117 °C, D = 0.50, f = 20 kHz 60
Operating junction and storage temperature TJ, TStg -55 to +175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage VBR,VR IR = 100 μA 600 - -
IF = 30 A - 1.6 2.1 V
Forward voltage VF
IF = 30 A, TJ = 125 °C - 1.3 -
VR = VR rated - - 20
Reverse leakage current IR μA
TJ = 125 °C, VR = VR rated - - 500
Junction capacitance CT VR = 200 V - 36 - pF
Series inductance LS Measured to lead 5 mm from package body - 8 - nH

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 22 -
Reverse recovery time trr TJ = 25 °C - 39 - ns
TJ = 125 °C - 50 -
TJ = 25 °C IF = 20 A - 14 -
Peak recovery current IRRM dIF/dt = 1000 A/μs A
TJ = 125 °C VR = 400 V - 24 -
TJ = 25 °C - 253 -
Reverse recovery charge Qrr nC
TJ = 125 °C - 785 -
TJ = 25 °C - 41 -
Reverse recovery time trr ns
TJ = 125 °C - 56 -
TJ = 25 °C IF = 30 A - 16 -
Peak recovery current IRRM dIF/dt = 1000 A/μs A
TJ = 125 °C VR = 400 V - 27 -
TJ = 25 °C - 306 -
Reverse recovery charge Qrr nC
TJ = 125 °C - 952 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance, junction-to-case RthJC - - 1.1 °C/W
- 5.5 - g
Weight
- 0.2 - oz.
6 12 kgf · cm
Mounting torque -
(5) (10) (lbf · in)
Maximum junction and storage
TJ, TStg -55 - 175 °C
temperature range
Marking device Case style: TO-247AD 2L E5PX3006L
IF - Instantaneous Forward Current (A)

1000 1000
TJ = 175 °C
IR - Reverse Current (μA)

100
100 TJ = 125 °C
10
TJ = 175 °C
10 1

0.1 TJ = 25 °C
1 TJ = 125 °C
TJ = 25 °C 0.01

0.1 0.001
0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600

VF - Forward Voltage Drop (V) VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

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Allowable Solder Pad Temperature (°C)

100 180
CT - Junction Capacitance (pF)

170
160
150
140 DC

130
120
110
100 Square wave (D = 0.50)
rated VR applied
90
10 80
0 100 200 300 400 500 600 0 5 10 15 20 25 30 35
VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current

70

60 RMS limit
Average Power Loss (W)

50

40
D = 0.01
30 D = 0.05
D = 0.10
D = 0.20
20
D = 0.50
DC
10

0
0 5 10 15 20 25 30 35 40 45 50

IF(AV) - Average Forward Current (A)

Fig. 5 - Average Power Loss vs. Average Forward Current

10
ZthJC - Thermal Impedance
Junction to Case (°C/W)

0.50
0.1 0.20
0.10
0.05
DC 0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)

Fig. 6 - Thermal Impedance ZthJC - Characteristics

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160 250
150 TJ = 125°C, VR = 400 V IF = 30 A, VR = 400 V, low dI/dt
140
200
130
120 IF = 60 A
125 °C
110 150
trr (ns)

trr (ns)
100 IF = 30 A
90 25 °C
100
80
70
60 50 In this dI/dt range curves are not dependent
IF = 15 A
50 from applied IF switching current, from 0.5 to
2 times IF(AV) rating
40 0
100 1000 0 20 40 60 80 100
dIF/dt (A/μs) dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt

1500 600
1400 TJ = 125 °C In this dI/dt range curves are not dependent
from applied IF switching current, from 0.5 to
1300 VR = 400 V IF = 60 A 500 2 times IF(AV) rating
1200
1100 400
1000 125 °C
Qrr (nC)

Qrr (nC)

IF = 30 A
900 300
800
700 200 IF = 30 A, VR = 400 V, low dI/dt
600
IF = 15 A
500 100
25 °C
400
300 0
100 1000 0 20 40 60 80 100

dIF/dt (A/μs) dIF/dt (A/μs)

Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt

35 10
In this dI/dt range curves are not dependent
TJ = 125 °C
IF = 60 A from applied IF switching current, from 0.5 to
30 VR = 400 V 8 2 times IF(AV) rating

IF = 30 A
25
6 IF = 30 A, VR = 400 V, low dI/dt
Irr (A)
Irr (A)

20 125 °C
4
15
IF = 15 A
2
10 25 °C

5 0
100 1000 0 20 40 60 80 100

dIF/dt (A/μs) dIF/dt (A/μs)

Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt

Revision: 08-Feb-2021 4 Document Number: 96757

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(3)
trr

ta tb

IF
t0 t10 %
0
0.1 IRRM
(2)
IRRM Qrr (4)

di(rec)M/dt (5)

(1) diF/dt
Fig. 13 - Reverse Recovery Waveform and Definitions
Notes
(1)
diF/dt - rate of change of current through zero crossing
(2)
IRRM - peak reverse recovery current
(3)
trr - reverse recovery time measured from t0, crossing point of negative going IF, to point t10%, 0.1 IRRM
(4)
Qrr - area under curve defined by t0 and t10 %
t 10 %

Q rr =  I ( t ) dt
t0
(5) di(rec)M/dt - peak rate of change of current during tb portion of trr

ORDERING INFORMATION TABLE

Device code VS- E 5 P X 30 06 L -N3

1 2 3 4 5 6 7 8 9

1 - Vishay Semiconductors product

2 - E = single diode
3 - 5 = Fred generation 5
4 - Package:
P = TO-247 package
5 - X = hyperfast recovery
6 - Current rating (30 = 30 A)
7 - Voltage rating (06 = 600 V)
8 - Package: L = long lead (TO-247AD)
9 - Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-E5PX3006L-N3 25 500 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95536
Part marking information www.vishay.com/doc?95648

Revision: 08-Feb-2021 5 Document Number: 96757

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2021 1 Document Number: 91000