MIG200J6CMB1W

TOSHIBA Intelligent Power Module Silicon N Channel IGBT

MIG200J6CMB1W (600V/200A 6in1)

High Power Switching Applications
Motor Control Applications

· Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current,
over-current, under-voltage and over-temperature) into a single package.
· The electrodes are isolated from the case
· Low thermal resistance
· VCE (sat) = 2.0 V (typ.)
· UL recognized: File No.E87989
· Weight: 385 g (typ.)

Equivalent Circuit

20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1

FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD

GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT

W V U N P

1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V)

8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L)
15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L)

1 2002-07-22
 MIG200J6CMB1W
Package Dimensions: TOSHIBA 2-123A1A
Unit: mm

1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V)

7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W)
13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y)
19. IN (Z) 20. GND (L)

2 2002-07-22
 MIG200J6CMB1W
Signal Terminal Layout
Unit: mm

1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V)

7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W)
13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y)
19. IN (Z) 20. GND (L)

3 2002-07-22
 MIG200J6CMB1W
Maximum Ratings (Tj = 25°C)

Stage Characteristics Condition Symbol Rating Unit

Supply voltage P-N Power terminal VCC 450 V

Collector-emitter voltage ¾ VCES 600 V
Collector current Tc = 25°C, DC IC 200 A
Inverter
Forward current Tc = 25°C, DC IF 200 A
Collector power dissipation Tc = 25°C, DC PC 1000 W
Junction temperature ¾ Tj 150 °C
Control supply voltage VD-GND Terminal VD 20 V
Input voltage IN-GND Terminal VIN 20 V
Control
Fault output voltage FO-GND Terminal VFO 20 V
Fault output current FO sink current IFO 10 mA
Operating temperature ¾ Tc -20~+100 °C
Storage temperature Range ¾ Tstg -40~+125 °C
Module
Isolation voltage AC 1 min VISO 2500 V
Screw torque M5 ¾ 3 N•m

Electrical Characteristics
1. Inverter stage

Characteristics Symbol Test Condition Min Typ. Max Unit

Tj = 25°C ¾ ¾ 1
Collector cut-off current ICES VCE = 600 V mA
Tj = 125°C ¾ ¾ 10
VD = 15 V, Tj = 25°C 1.7 2.0 2.4
Collector-emitter saturation voltage VCE (sat) IC = 200 A, V
VIN = 15 V ® 0 V Tj = 125°C ¾ 2.2 ¾

Forward voltage VF IF = 200 A, Tj = 25°C ¾ 2.2 2.6 V

ton ¾ 2.0 2.9
tc (on) VCC = 300 V, IC = 200 A ¾ 0.4 ¾
VD = 15 V, VIN = 3 V « 0 V
Switching time trr Tj = 25°C, Inductive load ¾ 0.2 ¾ ms

toff (Note 1) ¾ 1.3 2.3

tc (off) ¾ 0.2 ¾

Note 1: Switching time test circuit & timing chart

4 2002-07-22
 MIG200J6CMB1W
2. Control stage (Tj = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

High side ID (H) ¾ 13 17

Control circuit current VD = 15 V mA
Low side ID (L) ¾ 39 51
Input on signal voltage VIN (on) 1.4 1.6 1.8
VD = 15 V V
Input off signal voltage VIN (off) 2.2 2.5 2.8
Protection IFO (on) ¾ 10 12
Fault output current VD = 15 V mA
Normal IFO (off) ¾ ¾ 0.1
Over current protection
Inverter OC VD = 15 V, Tj <
= 125°C 320 ¾ ¾ A
trip level
Short circuit protection trip
Inverter SC VD = 15 V, Tj <
= 125°C 320 ¾ ¾ A
level
Over current cut-off time toff (OC) VD = 15 V ¾ 5 ¾ ms

Over temperature Trip level OT 110 118 125

Case temperature °C
protection Reset level OTr ¾ 98 ¾

Control supply under Trip level UV 11.0 12.0 12.5

¾ V
voltage protection Reset level UVr 12.0 12.5 13.0
Fault output pulse width tFO VD = 15 V 1 2 3 ms

3. Thermal resistance (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

IGBT ¾ ¾ 0.125
Junction to case thermal resistance Rth (j-c) °C/W
FRD ¾ ¾ 0.195
Case to fin thermal resistance Rth (c-f) Compound is applied ¾ 0.013 ¾ °C/W

5 2002-07-22
 MIG200J6CMB1W
Switching Time Test Circuit

Intelligent power module

TLP559
P
VD

0.1 mF 15 kW
OUT
IN
VS
15 V 47 mF

GND GND
VCC
U (V, W)
VD

IF = 0.1 mF 15 kW
16mA OUT
PG IN
VS
15 V 47 mF

N
GND GND

Timing Chart

Input pulse

15 V
VIN Waveform 2.5 V 1.6 V
0

90% Irr
IC Waveform Irr
20% Irr
trr
90%

VCE Waveform 10% 10% 10% 10%

tc (off) tc (on)
toff ton

6 2002-07-22
 MIG200J6CMB1W
4. Recommended conditions for application

Characteristics Symbol Test Condition Min Typ. Max Unit

Supply voltage VCC P-N Power terminal ¾ 300 400 V

Control supply voltage VD VD-GND Signal terminal 13.5 15 16.5 V
Carrier frequency fc PWM Control ¾ ¾ 20 kHz
Switching time test circuit
Dead time (Note 2) tdead 4 ¾ ¾ ms
(See page.6)

Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
time given above.

Dead Time Timing Chart

15 V
VIN Waveform
0

15 V
VIN Waveform
0

tdead tdead

7 2002-07-22
 MIG200J6CMB1W

IC – VCE IC – VCE
400 400
VD = 17 V

VD = 17 V 13 V 15 V
(A)

(A)
300 300
13 V
IC

IC
15 V
Collector current

Collector current
200 200

100 100

Common emitter Common emitter

Tj = 25°C Tj = 125°C

0 0
0 1 2 3 4 0 1 2 3 4

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

Switching time – IC Switching time – IC

10 10

ton
ton
toff
(ms)
(ms)

toff
1 1
Switching time
Switching time

tc (on)
tc (on)

tc (off) tc (off)
0.1 0.1
Tj = 25°C Tj = 125°C
VCC = 300 V VCC = 300 V
VD = 15 V VD = 15 V
L-LOAD L-LOAD
0.01 0.01
0 50 100 150 200 250 0 50 100 150 200 250

Collector current IC (A) Collector current IC (A)

IF – VF trr, Irr – IF
400 100
Irr
Peak reverse recovery current Irr (A)
Reverse recovery time trr (´10 ns)

350
(A)

300
Forward current IF

250

200 10
trr

150

100
Common cathode Common cathode
50 : Tj = 25°C : Tj = 25°C
: Tj = 125°C : Tj = 125°C
0 1
0 1 2 3 4 0 50 100 150 200 250

Forward voltage VF (V) Forward current IF (A)

8 2002-07-22
 MIG200J6CMB1W

OC – Tc ID (H) – fc
600 50

(mA)
500
Over current protection trip level

High side control circuit current ID (H)

40

400
30
OC (A)

300

20
200

10
100
VD = 15 V
VD = 15 V
Tj = 25°C
0 0
0 25 50 75 100 125 150 0 5 10 15 20 25

Case temperature Tc (°C) Carrier frequency fc (kHz)

ID (L) – fc Reverse bias SOA

120 400
(mA)

100 OC
Low side control circuit current ID (L)

320
(A)

80
IC

240
Collector current

60

160
40

80
20
VD = 15 V
VD = 15 V
Tj <
= 125°C
Tj = 25°C
0 0
0 5 10 15 20 25 0 100 200 300 400 500 600 700

Carrier frequency fc (kHz) Collector-emitter voltage VCE (V)

Rth (t) – tw Inverter stage

1
Transient thermal resistance

Diode
Rth (t) (°C/W)

0.1
Transistor

0.01

Tc = 25°C
0.001
0.001 0.01 0.1 1 10

Pulse width tw (s)

9 2002-07-22
 MIG200J6CMB1W

Turn on loss - IC Turn off loss - IC

100 100
(mJ)

(mJ)
10 10
Turn on loss Eon

Eoff
1 1

Turn off loss

VCC = 300 V VCC = 300 V
VD = 15 V VD = 15 V
0.1 0.1
L-LOAD L-LOAD
: Tj = 25°C : Tj = 25°C
: Tj = 125°C : Tj = 125°C
0.01 0.01
0 50 100 150 200 250 0 50 100 150 200 250

Collector current IC (A) Collector current IC (A)

10 2002-07-22
 MIG200J6CMB1W

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

11 2002-07-22
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.