MDU1511 – Single N-Channel Trench MOSFET 30V

ㅊ
MDU1511
Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ

General Description Features

The MDU1511 uses advanced MagnaChip’s MOSFET  VDS = 30V
Technology, which provides high performance in on-state  ID = 100A @VGS = 10V
resistance, fast switching performance and excellent  RDS(ON)
quality. MDU1511 is suitable device for DC/DC Converter < 2.4 mΩ @VGS = 10V
and general purpose applications. < 3.3 mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested

D D D D D D D D D

G
S S S G G S S S

PowerDFN56
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
o
TC=25 C 100.0
o
TC=70 C 94.0
Continuous Drain Current (1) ID A
o
TA=25 C 36.1(3)
TA=70oC 28.8(3)
Pulsed Drain Current IDM 400 A
o
TC=25 C 78.1
o
TC=70 C 50.0
Power Dissipation PD W
o
TA=25 C 5.5(3)
TA=70oC 3.5(3)
Single Pulse Avalanche Energy (2) EAS 287 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

(1)
Thermal Resistance, Junction-to-Ambient ( T ≤ 10s ) RθJA 22.7
(1) o
Thermal Resistance, Junction-to-Ambient ( Steady State ) RθJA 50.0 C/W

Thermal Resistance, Junction-to-Case RθJC 1.8

Jul. 2019. Version 1.5 1 MagnaChip Semiconductor Ltd.

 MDU1511 – Single N-Channel Trench MOSFET 30V
Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

MDU1511RH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free

Electrical Characteristics (TJ = 25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.8 2.7
VDS = 30V, VGS = 0V - - 1
Drain Cut-Off Current IDSS
TJ=55oC - - 5 μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 28A - 2.0 2.4
Drain-Source ON Resistance RDS(ON) TJ=125oC - 2.9 3.5 mΩ
VGS = 4.5V, ID = 24A - 2.7 3.3
Forward Transconductance gfs VDS = 5V, ID = 10A - 45 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) 38.8 51.8 64.8
Total Gate Charge Qg(4.5V) VDS = 15V, ID = 28A, 18.7 25.0 31.3
nC
Gate-Source Charge Qgs VGS = 10V - 9.9 -
Gate-Drain Charge Qgd - 9.4 -
Input Capacitance Ciss 2510 3347 4184
VDS = 15V, VGS = 0V,
Reverse Transfer Capacitance Crss 246 328 410 pF
f = 1.0MHz
Output Capacitance Coss 490 653 817
Turn-On Delay Time td(on) - 11.2 -
Rise Time tr VGS = 10V, VDS = 15V, - 23.2 -
ns
Turn-Off Delay Time td(off) ID = 28A, RG = 3.0Ω - 45.6 -
Fall Time tf - 18.6 -
Gate Resistance Rg f=1 MHz - 1.0 2.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 28A, VGS = 0V - 0.8 1.1 V
Body Diode Reverse Recovery Time trr - 33.8 50.7 ns
IF = 28A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 22.3 33.5 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 42.0A, VDD = 27V, VGS = 10V
3. T < 10sec.

Jul. 2019. Version 1.5 2 MagnaChip Semiconductor Ltd.

 MDU1511 – Single N-Channel Trench MOSFET 30V
50 4
VGS = 10V

Drain-Source On-Resistance [mΩ]

4.0V

40
5.0V
3 VGS = 4.5V
ID, Drain Current [A]

8.0V

3.0V
30 VGS = 10V

20

1
10

0 0
0.0 0.5 1.0 1.5 2.0 10 20 30 40 50

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 30

※ Notes : ※ Notes :
ID = 28.0A
1. VGS = 10 V
1.6 25
2. ID = 28.0 A
Drain-Source On-Resistance
Drain-Source On-Resistance
RDS(ON), (Normalized)

1.4 20
RDS(ON) [mΩ ],

1.2 15

1.0 10

0.8 5 TA = 25℃

0.6 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10

o VGS, Gate to Source Volatge [V]

TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

20 100
※ Notes :
VDS = 5V

16
ID, Drain Current [A]

10
12
25℃
-IS [A]

TA=25℃
8
1

0 0.1
0 1 2 3 4 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VGS, Gate-Source Voltage [V] -VSD [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jul. 2019. Version 1.5 3 MagnaChip Semiconductor Ltd.

 MDU1511 – Single N-Channel Trench MOSFET 30V
10 4000
※ Note : ID = 28A Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
VDS = 15V 3500 Ciss
Crss = Cgd
8
VGS, Gate-Source Voltage [V]

3000

Capacitance [pF]
2500
6

2000

4 1500
※ Notes ;
1000 1. VGS = 0 V
Coss 2. f = 1 MHz
2
500
Crss

0 0
0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3
10 150
140
130
10 us
120
2
10 110
100 us
ID, Drain Current [A]
ID, Drain Current [A]

100
Operation in This Area 90
is Limited by R DS(on) 1 ms
1
80
10
10 ms 70
60
100 ms
DC 50
0 40
10
Single Pulse 30
TJ=Max Rated
o
20
TC=25 C
10
-1
10 0
10
-1
10
0
10
1
10
2 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TA, Case Temperature [℃]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current

Vs. Case Temperature
1
10
ZJC( C/W), Thermal Response

0
10
D=0.5

0.2

0.1
-1
10
0.05
o

# Notes :
0.02 Duty Factor, D=t1/t2
0.01 PEAK TJ = PDM * ZJC + TC
single pulse
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response

Curve

Jul. 2019. Version 1.5 4 MagnaChip Semiconductor Ltd.

 MDU1511 – Single N-Channel Trench MOSFET 30V
Package Dimension

PowerDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified

MILLIMETERS
Dimension
Min Max
A 0.90 1.10
b 0.33 0.51
C 0.20 0.34
D1 4.50 5.10

D2 - 4.22

E 5.90 6.30
E1 5.50 6.10
E2 - 4.30
e 1.27BSC
H 0.41 0.71
K 0.20 -
L 0.51 0.71

α 0° 12°

Jul. 2019. Version 1.5 5 MagnaChip Semiconductor Ltd.

 MDU1511 – Single N-Channel Trench MOSFET 30V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jul. 2019. Version 1.5 6 MagnaChip Semiconductor Ltd.