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KSA992

KSA992

Audio Frequency Low Noise Amplifier


• Complement to KSC1845

1 TO-92
1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor


Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -120 V
VCEO Collector-Emitter Voltage -120 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -50 mA
IB Base Current -10 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted


Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -120V, IE=0 -50 nA
ICEO Collector Cur-off Current VCE= -100V, IB=0 -1 µA
IEBO Emitter Cut-off Current VEB= -5mA, IC=0 -50 nA
hFE1 DC Current Gain VCE= -6V, IC= -0.1mA 150 500
hFE2 VCE= -6V, IC= -1mA 200 500 800
VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 -0.61 -0.65 V
VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.09 -0.3 V
fT Current Gain Bandwidth Product VCE= -6V, IC= -1mA 50 100 MHz
Cob Output Capacitance VCB= -30V, IE=0, f=1MHz 2 3 pF
NV Noise Voltage VCE = -5.0V, IC = -1.0mA, 25 40 mV
RG =100KW, GV = 80dB,
f = 10Hz to 1.0KHz

hFE2 Classification
Classification P F E
hFE2 200 ~ 400 300 ~ 600 400 ~ 800

©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004


KSA992
Typical Characteristics

-1.0 -10
IB = -1.2µA
IB = -1.2µA IB = -24µA
IB = -20µA
IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT


IB = -1.0µA
-0.8 -8
IB = -16µA
IB = -0.8µA

-0.6 -6
IB = -12µA
IB = -0.6µA

-0.4 -4 IB = -8µA
IB = -0.4µA

IB = -4µA
-0.2 -2
IB = -0.2µA

IB = 0 IB = 0
0.0 0
0 -20 -40 -60 -80 -100 0 -1 -2 -3 -4 -5

VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. Static Characteristic

VCE(sat), VBE(sat)[V], SATURATION VOLTAGE


1000 -10

VCE= -6V IC = 10 - IB

800
hFE, DC CURRENT GAIN

-1 VBE(sat)
600

400
-0.1 VCE(sat)

200

0 -0.01
-0.01 -0.1 -1 -10 -100 -0.1 -1 -10 -100

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage


Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

10 1000

IE=0 VCE = -6V


f = 1MHz
Cob [pF], CAPACITANCE

100

10

0.1 1
-1 -10 -100 -1000 0.1 1 10 100

VCB [V], COLLECTOR-BASE VOLTAGE IE[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004


KSA992
Typical Characteristics (Continued)

800

700
PC[mW], POWER DISSIPATION

600

500

400

300

200

100

0
0 25 50 75 100 125 150 175

o
Ta[ C], AMBIENT TEMPERATURE

Figure 7. Power Derating

©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004


KSA992
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004


TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® ISOPLANAR™ Power247™ SuperFET™
ActiveArray™ FASTr™ LittleFET™ PowerSaver™ SuperSOT™-3
Bottomless™ FPS™ MICROCOUPLER™ PowerTrench® SuperSOT™-6
CoolFET™ FRFET™ MicroFET™ QFET® SuperSOT™-8
CROSSVOLT™ GlobalOptoisolator™ MicroPak™ QS™ SyncFET™
DOME™ GTO™ MICROWIRE™ QT Optoelectronics™ TinyLogic®
EcoSPARK™ HiSeC™ MSX™ Quiet Series™ TINYOPTO™
E2CMOS™ I2C™ MSXPro™ RapidConfigure™ TruTranslation™
EnSigna™ i-Lo™ OCX™ RapidConnect™ UHC™
FACT™ ImpliedDisconnect™ OCXPro™ µSerDes™ UltraFET®
FACT Quiet Series™ OPTOLOGIC® SILENT SWITCHER® VCX™
Across the board. Around the world.™ OPTOPLANAR™ SMART START™
The Power Franchise® PACMAN™ SPM™
Programmable Active Droop™ POP™ Stealth™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2004 Fairchild Semiconductor Corporation Rev. I11

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