GT8G131

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT8G131
Strobe Flash Applications
Unit: mm

· Supplied in Compact and Thin Package Requires Only a Small

Mounting Area
· 4th generation (trench gate structure) IGBT
· Enhancement-mode
· 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
· Peak collector current: IC = 150 A (max)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-emitter voltage VCES 400 V

DC VGES ±6
Gate-emitter voltage V
Pulse VGES ±8
DC IC 8
Collector current A
1 ms ICP 150
JEDEC ―
Collector power dissipation (Note 1) PC 1.1 W
Junction temperature Tj 150 °C JEITA ―

Storage temperature range Tstg -55~150 °C TOSHIBA 2-6J1C

2 Weight: 0.080 g (typ.)
Note 1: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t]

Equivalent Circuit

8 7 6 5

1 2 3 4

These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/ms.

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 GT8G131
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGES VGE = ±6 V, VCE = 0 ¾ ¾ ±10 mA

Collector cut-off current ICES VCE = 400 V, VGE = 0 ¾ ¾ 10 mA
Gate-emitter cut-off voltage VGE (OFF) IC = 1 mA, VCE = 5 V 0.6 ¾ 1.5 V
Collector-emitter saturation voltage VCE (sat) IC = 150 A, VGE = 4 V ¾ 3.0 7.0 V
Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz ¾ 3800 ¾ pF

Rise time tr 4V ¾ 1.5 ¾

0
51 W
Turn-on time ton ¾ 1.7 ¾

2.0 9
Switching time ms
Fall time tf VIN: tr <
= 100 ns ¾ 1.9 ¾
tf <
= 100 ns 300 V
Duty cycle <= 1%
Turn-off time toff ¾ 2.4 ¾

Thermal resistance (Note 2) Rth (j-a) ¾ ¾ ¾ 114 °C/W

2
Note 2: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t]

Marking

Type
GT8G131
※
Lot No.

● on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture (01 for first week of year, continues up to 52 or 53)

Year of manufacture (One low-order digits of calendar year)

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 GT8G131

IC – VCE IC – VCE
200 200
4.5 V 4.0 V 4.0 V
Common emitter Common emitter 4.5 V
Tc = -40°C VGE = 5 V Tc = 25°C
160 3.5 V 160

(A)
(A)

VGE = 5 V 3.5 V

3.0 V

IC
IC

120 120 3.0 V

Collector current
Collector current

2.5 V
80 80

2.5 V

40 40

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC – VCE IC – VCE
200 200
4.5 V
Common emitter 4.0 V Common emitter 4.5 V
Tc = 70°C Tc = 125°C 4.0 V
160 160
VGE = 5 V 3.5 V VGE = 5 V
(A)
(A)

3.5 V
IC
IC

120 120
3.0 V
Collector current
Collector current

3.0 V

80 80

2.5 V 2.5 V

40 40

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC – VGE VCE (sat) – Tc

200 5
Common emitter Common emitter
25°C
VCE = 5 V 70°C VGE = 4 V
Collector-emitter saturation voltage

160 4
(A)

IC = 150 A
IC

-40°C
VCE (sat) (V)

120 3
Collector current

Tc = 125°C 120 A

90 A
80 2
60 A

40 1

0 0
0 1 2 3 4 5 -80 -40 0 40 80 120 160

Gate-emitter voltage VGE (V) Case temperature Tc (°C)

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 GT8G131

VCE – VGE VCE – VGE

5 5
Common emitter Common emitter

(V)
(V)

Tc = -40°C Tc = 25°C
4 4

VCE
VCE

IC = 150 A
IC = 150 A

Collector-emitter voltage
Collector-emitter voltage

3 3
120 A 120 A

90 A 90 A
2 60 A 2 60 A

1 1

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)

VCE – VGE VCE – VGE

5 5
Common emitter Common emitter
(V)
(V)

Tc = 70°C Tc = 125°C
4 4
VCE
VCE

IC = 150 A
IC = 150 A

120 A
Collector-emitter voltage
Collector-emitter voltage

3 120 A 3

90 A 90 A

60 A 60 A
2 2

1 1

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)

VGE (OFF) – Tc C – VCE

2.0 5000
(V)

Common emitter
VGE = 5 V 3000 Cies
Gate-emitter cut-off voltage VGE (OFF)

IC = 1 mA
1.6
1000
(pF)

1.2
Capacitance C

300

0.8 Coes
100
Cres
Common emitter
0.4 30 VGE = 0 V
f = 1 MHz
Tc = 25°C
0 10
-80 -40 0 40 80 120 160 1 3 10 30 100 300 1000

Case temperature Tc (°C) Collector-emitter voltage VCE (V)

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 GT8G131

Switching Time – RG VCE, VGE – QG

20 500 10
Common emitter
Common emitter
VCE = 300 V

(V)
VCE = 300 V

(V)
VGE = 4 V 400 RL = 2.0 W 8
10 Tc = 25°C

VCE
IC = 150 A

Gate-emitter voltage VGE

(ms)

Tc = 25°C

Collector-emitter voltage
300 6
Switching time

toff VGE
3 200 4

tf tr
100 2
ton

VCE
1
10 30 50 100 300 0 0
0 20 40 60 80
Gate resistance RG (9)
Gate charge QG (nC)

Switching Time – IC Maximum Operating Area

10 800
(mF)

toff
3 600
(ms)

CM

tf
Switching time

Main capacitance

1 ton 400

tr
Common emitter VCM = 350 V
0.3 VCE = 300 V 200
Tc <
= 70°C
VGE = 4 V
RG = 51 W VGE = 4 V
Tc = 25°C 20 W <
= RG <
= 200 W
0.1 0
0 50 100 150 200 0 40 80 120 160 200

Collector current IC (A) Peak collector current ICP (A)

Minimum Gate Drive Area

200
(A)

160
ICP

Tc = 25°C
120
Peak collector current

70°C

80

40

0
0 2 4 6 8

Gate-emitter voltage VGE (V)

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 GT8G131

RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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