BUP 313D

IGBT With Antiparallel Diode

Preliminary data

• Low forward voltage drop

• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode Pin 1 Pin 2 Pin 3
G C E

Type VCE IC Package Ordering Code

BUP 313D 1200V 32A TO-218 AB Q67040-A4228-A2

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage VCGR
RGE = 20 kΩ 1200
Gate-emitter voltage VGE ± 20
DC collector current IC A
TC = 25 °C 32
TC = 90 °C 20
Pulsed collector current, tp = 1 ms ICpuls
TC = 25 °C 64
TC = 90 °C 40
Diode forward current IF
TC = 90 °C 18
Pulsed diode current, tp = 1 ms IFpuls
TC = 25 °C 108
Power dissipation Ptot W
TC = 25 °C 200
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150

Semiconductor Group 1 Dec-02-1996

 BUP 313D

Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance
Thermal resistance, chip case RthJC ≤ 0.63 K/W
Diode thermal resistance, chip case RthJCD ≤ 1.25

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 0.35 mA, Tj = 25 °C 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(sat)
VGE = 15 V, IC = 15 A, Tj = 25 °C - 2.7 3.2
VGE = 15 V, IC = 15 A, Tj = 125 °C - 3.3 3.9
VGE = 15 V, IC = 30 A, Tj = 25 °C - 3.4 -
VGE = 15 V, IC = 30 A, Tj = 125 °C - 4.3 -
Zero gate voltage collector current ICES mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C - - 0.4
Gate-emitter leakage current IGES nA
VGE = 25 V, VCE = 0 V - - 100

AC Characteristics
Transconductance gfs S
VCE = 20 V, IC = 15 A - 12 -
Input capacitance Ciss pF
VCE = 25 V, VGE = 0 V, f = 1 MHz - 1000 1350
Output capacitance Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 150 225
Reverse transfer capacitance Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 70 100

Semiconductor Group 2 Dec-02-1996

 BUP 313D

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time td(on) ns
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 82 Ω - 70 100
Rise time tr
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 82 Ω - 45 70
Turn-off delay time td(off)
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 82 Ω - 400 530
Fall time tf
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 82 Ω - 70 95

Free-Wheel Diode
Diode forward voltage VF V
IF = 15 A, VGE = 0 V, Tj = 25 °C - 2.2 2.8
IF = 15 A, VGE = 0 V, Tj = 125 °C - 1.7 -
Reverse recovery time trr ns
IF = 15 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C - - -
Tj = 125 °C - 100 150
Reverse recovery charge Qrr µC
IF = 15 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C - 1 1.8
Tj = 125 °C - 3 5.4

Semiconductor Group 3 Dec-02-1996

 BUP 313D

Power dissipation Collector current

Ptot = ƒ(TC) IC = ƒ(TC)
parameter: Tj ≤ 150 °C parameter: VGE ≥ 15 V , Tj ≤ 150 °C

220 32

W
A
180
Ptot IC
24
160

140 20

120
16
100

80 12

60
8

40
4
20
0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

Safe operating area Transient thermal impedance IGBT

IC = ƒ(VCE) Zth JC = ƒ(tp)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C parameter: D = tp / T

10 2 10 0
t = 9.0µs
p
10 µs

A K/W
IC ZthJC

10 1 10 -1
100 µs

D = 0.50
0.20
1 ms
10 0 10 -2 0.10
0.05
0.02
10 ms single pulse
0.01

DC
10 -1 10 -3
0 1 2 3 -5 -4 -3 -2 -1 0
10 10 10 10 V 10 10 10 10 10 s 10
VCE tp

Semiconductor Group 4 Dec-02-1996

 BUP 313D

Typ. output characteristics Typ. output characteristics

IC = f (VCE) IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C

30 30
A A
26 17V 26 17V
15V 15V
IC 24 13V IC 24 13V
11V 11V
22 22
9V 9V
20 7V 20 7V

18 18
16 16
14 14
12 12
10 10
8 8
6 6
4 4
2 2
0 0
0 1 2 3 V 5 0 1 2 3 V 5
VCE VCE

Typ. transfer characteristics

IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V

30
A
26
IC 24
22
20
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 V 14
VGE

Semiconductor Group 5 Dec-02-1996

 BUP 313D

Typ. switching time Typ. switching time

I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A

10 3 10 3 tdoff

t tdoff t
ns ns

tdon
tr
10 2 10 2
tr

tdon
tf tf

10 1 10 1
0 5 10 15 20 25 30 A 40 0 50 100 150 200 Ω 300
IC RG

Typ. switching losses Typ. switching losses

E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 15 A

10 10

mWs mWs

E 8 8
E

7 7
Eon

6 6

5 5

4 Eon
4

3 3
Eoff

2 2 Eoff

1 1
0 0
0 5 10 15 20 25 30 A 40
IC
0 50 100 150 200 Ω 300
RG

Semiconductor Group 6 Dec-02-1996

 BUP 313D

Typ. gate charge Typ. capacitances

VGE = ƒ(QGate) C = f (VCE)
parameter: IC puls = 15 A parameter: VGE = 0 V, f = 1 MHz

20 10 1

V
nF
VGE 16 C

14 600 V 800 V
10 0 Ciss

12

10

8 Coss
10 -1
6
Crss

0 10 -2
0 10 20 30 40 50 60 70 80 100 0 5 10 15 20 25 30 V 40
Q Gate VCE

Short circuit safe operating area Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH parameter: VGE = 15 V

10 2.5

I Csc/I C(90°C) ICpuls /IC

6 1.5

4 1.0

2 0.5

0 0.0
0 200 400 600 800 1000 1200 V 1600 0 200 400 600 800 1000 1200 V 1600
VCE VCE

Semiconductor Group 7 Dec-02-1996

 BUP 313D

Typ. forward characteristics Transient thermal impedance Diode

IF = f (VF) Zth JC = ƒ(tp)
parameter: Tj parameter: D = tp / T

10 1
30
A
K/W
26
IF 24 ZthJC
10 0
22
20
18
Tj=125°C Tj=25°C
16 10 -1
14 D = 0.50

12 0.20
0.10
10
0.05
8 10 -2
0.02
6
0.01
4 single pulse
2
0 10 -3
-5 -4 -3 -2 -1 0
0.0 0.5 1.0 1.5 2.0 V 3.0 10 10 10 10 10 s 10
VF tp

Semiconductor Group 8 Dec-02-1996