SVF10N65CF/K/KL_Datasheet

10A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION

SVF10N65CF/K/KL is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved process and
cell structure have been especially tailored to minimize on-state
resistance, provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.

FEATURES

 10A,650V,RDS(on)(typ.)=0.80Ω@VGS=10V
 Low gate charge
 Low Crss
 Fast switching
 Improved dv/dt capability

NOMENCLATURE

ORDERING INFORMATION

Hazardous
Part No. Package Marking Packing
Substance Control
SVF10N65CF TO-220F-3L SVF10N65CF Halogen free Tube
SVF10N65CK TO-262-3L SVF10N65CK Halogen free Tube
SVF10N65CKL TO-262L-3L 10N65CKL Halogen free Tube

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

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 Silan
Microelectronics SVF10N65CF/K/KL_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Ratings
Characteristics Symbol Unit
SVF10N65CF SVF10N65CK/KL
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
TC = 25°C 10
Drain Current ID A
TC = 100°C 6.3
Drain Current Pulsed IDM 40 A
Power Dissipation(TC=25°C) 50 150 W
PD
-Derate above 25°C 0.4 1.20 W/°C
Single Pulsed Avalanche Energy (Note 1) EAS 618 mJ
Operation Junction Temperature Range TJ -55～+150 °C
Storage Temperature Range Tstg -55～+150 °C

THERMAL CHARACTERISTICS

Ratings
Characteristics Symbol Unit
SVF10N65CF SVF10N65CK/KL
Thermal Resistance, Junction-to-Case RθJC 2.5 0.83 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.5 °C/W

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

Characteristics Symbol Test conditions Min. Typ. Max. Unit
Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 -- -- V
Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 1.0 µA
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA
Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V
Static Drain- Source
RDS(on) VGS=10V, ID=5.0A -- 0.8 1.0 Ω
On State Resistance
Input Capacitance Ciss -- 1100 --
VDS=25V,VGS=0V,
Output Capacitance Coss -- 130 -- pF
f=1.0MHZ
Reverse Transfer Capacitance Crss -- 12.5 --
Turn-on Delay Time td(on) VDD=325V, ID=10A, -- 21.27 --
Turn-on Rise Time tr RG=25Ω -- 41.40 --
ns
Turn-off Delay Time td(off) -- 82.47 --
Turn-off Fall Time tf (Note 2,3) -- 42.53 --
Total Gate Charge Qg VDS=520V,ID=10A, -- 28.5 --
Gate-Source Charge Qgs VGS=10V -- 6.23 -- nC
Gate-Drain Charge Qgd (Note 2,3) -- 13.2 --

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 Silan
Microelectronics SVF10N65CF/K/KL_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Continuous Source Current IS Integral Reverse p-n Junction -- -- 10
A
Pulsed Source Current ISM Diode in the MOSFET -- -- 40
Diode Forward Voltage VSD IS=10A,VGS=0V -- -- 1.3 V
Reverse Recovery Time Trr IS=10A,VGS=0V, -- 561 -- ns
Reverse Recovery Charge Qrr dIF/dt=100A/µS -- 4.32 -- µC
Notes:
1. L=30mH, IAS=6.0A, VDD=100V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.

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 Silan
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TYPICAL CHARACTERISTICS

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100 100
VGS=4.5V -55°C
VGS=5V 25°C
VGS=5.5V 150°C

Drain Current – ID(A)

Drain Current – ID(A)

VGS=6V
10 VGS=7V 10
VGS=8V
VGS=10V
VGS=15V
1 1

Notes: Notes:
1.250µS pulse test 1.250µS pulse test
2.TC=25°C 2.VDS=50V
0.1 0.1
0.1 1 10 100 0 1 2 3 4 5 6 7 8 9 10

Drain-Source Voltage – VDS(V) Gate-Source Voltage– VGS(V)

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain-Source On-Resistance – RDS(ON)(mΩ)

Drain Current and Gate Voltage Variation vs. Source Current and Temperature
100
-55°C
Reverse Drain Current – IDR(A)

990
VGS=10V 25°C
970 VGS=20V 150°C

950 10

930
910
890 1

870 Notes:
1.250µS pulse test
850 Notes: TJ=25°C 2.VGS=0V

830 0.1
2 3 4 5 6 7 8 9 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Drain Current – ID(A) Source-Drain Voltage – VSD(V)

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2500 12
Ciss=Cgs+Cgd(Cds=shorted)
VDS=520V
Gate-Source Voltage – VGS(V)

Coss=Cds+Cgd
Crss=Cgd 10 VDS=325V
2000 VDS=130V
Capacitance (pF)

8
1500
Ciss 6
Coss
1000 Crss
Notes:
4
1. VGS=0V
500 2. f=1MHz
2
Notes: ID=10.0A

0 0
0.1 1 10 100 0 10 20 30

Drain-Source Voltage – VDS(V) Total Gate Charge – Qg(nC)

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 Silan
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TYPICAL CHARACTERISTICS (continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-resistance vs.
vs. Temperature Temperature
1.2 3.0
Drain-Source Breakdown Voltage–

Drain-Source On-Resistance–
2.5

RDS(ON)(Normalized)
1.1
BVDSS(Normalized)

2.0

1.0 1.5

1.0
0.9
Notes: Notes:
1. VGS=0V 0.5 1. VGS=10V
2. ID=250µA 2. ID=5.0A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature – TJ(°C) Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating Figure 9-2. Max. Safe Operating
2
Area(SVF10N65CF) Area(SVF10N65CK/KL)
10 102

100µs 100µs
101 101
Drain Current - ID(A)

Drain Current - ID(A)

1ms 1ms
10ms 10ms

100 DC
100 DC
Operation in this area Operation in this area is
is limited by RDS(ON) limited by RDS(ON)

10-1 Notes: 10-1 Notes:

1.TC=25°C 1.TC=25°C
2.Tj=150°C 2.Tj=150°C
3.RDS(ON)[max]=1.0Ω 3.RDS(ON)[max]=1.0Ω
10-2 10-2
100 101 102 103 100 101 102 103
Drain-Source Voltage - VDS(V) Drain-Source Voltage - VDS(V)

Figure 10. Max. Drain Current vs.

Case Temperature
12

10
Drain Current - ID(A)

0
25 50 75 100 125 150

Case Temperature – TC(°C)

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 Silan
Microelectronics SVF10N65CF/K/KL_Datasheet
TYPICAL TEST CIRCUIT

Gate Charge Test Circuit & Waveform

Same Type VGS

Qg
as DUT 10V
50KΩ
VDS
12V 200nF
300nF

Qgs Qgd

VGS

DUT
3mA
Charge

Resistive Switching Test Circuit & Waveform

RL VDS
VDS
90%
VGS
VDD
RG
DUT
10%
VGS
10V
td(on) tr
ton td(off) tf
toff

Unclamped Inductive Switching Test Circuit & Waveform

1 2 BVDSS
EAS =
L 2 LIAS BVDSS - VDD
VDS
BVDSS
ID
IAS

RG
DUT VDD ID(t)
10V
VDD VDS(t)
tp
tp Time

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 Silan
Microelectronics SVF10N65CF/K/KL_Datasheet
PACKAGE OUTLINE

TO-220F-3L UNIT: mm

1
4.42 4.70 5.02

2.30 2.54 2.80

2.50 2.76 3.10
0.70 0.80 0.90
1 1.47

0.35 0.50 0.65

15.25 15.87 16.25

15.30 15.75 16.30

9.30 9.80 10.30

9.73 10.16 10.36

2.54BCS

6.40 6.68 7.00

12.48 12.98 13.48

/ / 3.50
3.00 3.18 3.40
3.05 3.30 3.55

TO-262-3L UNIT: mm

E A
SYMBOL MIN NOM MAX
c2
A 4.30 4.50 4.70
L2

A1 2.20 --- 2.92

b 0.71 0.80 0.97

b2 1.20 --- 1.50

c 0.34 --- 0.76

D

c2 1.22 1.30 1.35

D 8.38 --- 9.30

E 9.80 10.16 10.54

e 2.54 BSC
Ll

L 12.80 14.10
---

b2 L1 2.80 3.30 4.06

L2 1.12 --- 1.42

A1
L

c
e e

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

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 Silan
Microelectronics SVF10N65CF/K/KL_Datasheet
PACKAGE OUTLINE(continued)

TO-262L-3L UNIT: mm

E A
SYMBOL MIN NOM MAX
c2
A 4.30 4.50 4.70

L2
A1 2.20 --- 2.92

b 0.71 0.80 0.97

b2 1.20 --- 1.50

c 0.34 --- 0.76

D

c2 1.22 1.30 1.35

D 8.38 --- 9.30

E 9.80 10.16 10.54

e 2.54 BSC
Ll

L 12.80 --- 14.10

b2 L1 1.23 1.28 1.31

L2 1.12 --- 1.42

A1
L

c
e e

Disclaimer :
• Silan reserves the right to make changes to the information herein for the improvement of the design and performance without
prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such
information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to property.
• Silan will supply the best possible product for customers!

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.6

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 Silan
Microelectronics SVF10N65CF/K/KL_Datasheet
Part No.: SVF10N65CF/K/KL Document Type: Datasheet
Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.6 Author: Yin Zi

Revision History:
1. Modify the Typical Characteristics
Rev.: 1.5 Author: Yin Zi
Revision History:
1. Add the package information of TO-262L-3L
2. Modify the package information of TO-262-3L
Rev.: 1.4 Author: Yin Zi
Revision History:
1. Modify the package information of TO-220F-3L
Rev.: 1.3 Author: Yin Zi
Revision History:
1. Add information for TO-262-3L package
Rev.: 1.2 Author: Yin Zi
Revision History:
1. Modify the thermal characteristics
Rev.: 1.1 Author: Yin Zi
Revision History:
1. Modify the figure 6
Rev.: 1.0 Author: Yin Zi
Revision History:
1. First release

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