Electrical Properties

of Materials
Lecture 2
Chap 1
 In this lecture we will going to
discuss ….
➢ Crystal structure,
➢ lattice, basis, unit cell
➢ Face centered cubic (FCC), Body
Centered Cubic (BCC)

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Recap
◦ Properties of materials
◦ Mid: main reason of different properties: structure of solids, Electrical and thermal properties, elementary of quantum physics
◦ Final: Modern theory of solids, Dielectrical properties of solids, magnetic properties of solids
◦ Others: optical properties of solids, mechanical properties of solids

◦ Examples:

◦ Electrical properties: although carbon resistors shows linear characteristics, semiconductor shows exponential
characteristics

◦ Thermal properties: which materials adsorb maximum solar energy are investigated

◦ Dielectric properties: electrolyte capacitors, ceramic type capacitors shows different capacitances due to their different
dielectric constant

◦ Magnetic properties: materials having electric transformers to ferrite antennas for signal communication.
 1.Structure of Solids
CRYSTAL ❑Amorphous – atoms are placed at random
❑Crystalline – atoms are placed with a long-
STRUCTURES range order
❑Polycrystalline – atoms are placed with a
localized short-range order but without a total
long-range order.
Crystal Structure
❑most important property of a crystal is periodicity
❑periodicity gives the long-range order
❑local bonding geometry is repeated many times at
regular interval – results in a periodic array of
atoms in space
❑location of each atom is therefore predictable
anywhere in the crystal
❑nearly all metals, semiconductors and ceramics are
crystalline
Lattice and Basis
❑Lattice → a regular array of points in space with a
distinguishable periodicity
❑Basis → an identical group of atoms (or
molecules) that is placed at each lattice point
identical with respect to composition, arrangement
and orientation.
❑Crystal = Lattice + Basis
❑A crystal is obtained from lattice by placing basis
at each lattice point.
 Unit Cell

❑most convenient small cell in a crystal

structure that carries the characteristics
3-D unit cell of the crystal
❑repetition of the unit cell in three
dimensions generates the whole crystal
structure

2-D unit cell

Different types of 2D unit cell

a) b)
Primitive unit cell-
one atom in unit cell,
Fig. a, b, c and d (red
color)

Non-Primitive unit
cell- more than one
atom in unit cell Fig.
d ( black color)

d)
c)
2D-unit cell (SiC)
C
Si
The 2D unit cells can be
constructed using Si atoms
(Purple color) or C atoms
(Brown color).
Representation of a 3D-unit cell

➢ by a parallelepiped

➢ align the x, y, and z axes with the edges of the unit cell
taking the lower-left rear corner as origin

➢ sides a, b, and c and angles 𝛼, 𝛽, 𝛾 are referred to as the

lattice parameters

x
Bravais
Lattice
(3D)
❑ 14 distinct lattices
possible in three-
dimensional space

❑ grouped into 7 crystal

systems
Face-Centered Cubic
(FCC) Crystal

◦ (a) The crystal structure of copper is face

centered cubic (FCC). The atoms are
positioned
◦ at well defined sites arranged periodically
and there is a long range order in the crystal.
◦ (b) An FCC unit cell with closed packed
spheres.
◦ (c) Reduced sphere representation of the unit
cell. Examples: Ag, Al, Au, Ca, Cu,
◦ γ-Fe (>912 ˚C), Ni, Pd, Pt, Rh.
FCC Crystal
Problem
◦ Silver (Ag) has a FCC crystal structure. If
the radius R of the Ag atom is 0.1444 nm
find the lattice parameter a, the atomic
concentration, and the atomic packing
factor of Silver.
How one unit cell gets 1/8th of an atom?

2 unit cells are seen by 3 unit cells are seen by

the corner red atom the corner red atom

4 unit cells are seen by

the corner red atom
How one unit cell gets 1/8th of an atom?

5 unit cells are seen by

the corner red atom 6 unit cells are seen by
the corner red atom

7 unit cells are seen by

the corner red atom
How one unit cell gets 1/8th of an atom?

8 unit cells are seen by

the corner red atom
 FCC CRYSTAL

The face is a square of side a, and the face diagonal is √(a2 + a2) or a √ 2.
The diagonal has one atom at the center of diameter 2R, which touches two atoms centered at the corners.
The diagonal, going from corner to corner, is therefore R + 2R + R = 4R.

Thus, a √ 2 = 4R and a = 2 √ 2R.

Therefore, a = 2 √ 2 x (0.1444 nm) = 0.4084 nm.

Now, the Ag atom at each corner is shared with eight other adjoining unit cells.
Each atom at the face center is shared with the neighboring unit cell.
Therefore,
the number atoms in the unit cell = 8 corners X 1/8 atom + 6 faces X 1/2 atom = 4 atoms.

Atomic concentration,
Number of atoms in unit cell 4 4
𝑛𝑎𝑡 = = 3= = 5.87 × 1022 𝑐𝑚−3
Volume of unit cell 𝑎 0.4084 3

Atomic Packing Factor ,

Number of atoms in unit cell×Volume of one atom 4 4 4 4 𝑎 3
𝐴𝑃𝐹 = = 3 𝜋𝑅 3 = 𝜋 = 0.74 𝑜𝑟 74%
Volume of unit cell 𝑎 3 0.40843 3 2 2
Body-Centered Cubic
(BCC) Crystal

❑Example: Alkali metals (Li, Na, K, Rb), Cr,

Mo, W, Mn, α-Fe (< 912 ˚C), β-Ti (> 882 ˚C)

❑Body centered cubic crystal (BCC) crystal

structure.
a) A BCC unit cell with closely packed hard
spheres representing the Fe atoms.
b) A reduced-sphere unit cell.
BCC Crystal
Problem
Iron (below 912oC) has a BCC crystal. If the
radius of the Fe atom is 0.1241 nm, find its
lattice parameter a, atomic concentration
and the APF.
 BCC CRYSTAL

Consider the cube diagonal. Two corner atoms and the central body atom are in contact and the length of the cube
2 2 4
diagonal, therefore, is 4R. And, 4𝑅 = 𝑎2 + 𝑎 2 = 3𝑎2 → 𝑎 = 𝑅
3
Therefore, a = 4/√ 3 x (0.1241 nm) = 0.2866 nm.

There are 8 corners and each corner has 1/8 th of an atom within the unit cell. In addition,
there is one full atom at the center of the unit cell.
Therefore,
the number atoms in the unit cell = 8 corners X 1/8 atom + 1 atom = 2 atoms.

Atomic concentration,
Number of atoms in unit cell 2 2
𝒏𝒂𝒕 = = 3= = 𝟖. 𝟓 × 𝟏𝟎𝟐𝟐 𝒄𝒎−𝟑
Volume of unit cell 𝑎 0.2866 3

Atomic Packing Factor ,

3
Number of atoms in unit cell×Volume of one atom 2 4 2 4 2 4 𝑎 3
𝑨𝑷𝑭 = = 3 𝜋𝑅 3 = 𝜋𝑅 3 = 𝜋 = 0.68 𝑜𝑟 𝟔𝟖%
Volume of unit cell 𝑎 3 3
𝑎 3 0.40843 3 4
Summary
◦ Crystal structures are three types
◦ Single Crystalline, polycrystalline, amorphous

◦ Crystalline materials are geometrically represented by lattice and real representation of lattices are basis.
◦ Crystalline materials are consisted of unit cells which represent the whole crystal.
◦ Unit cells are primitive or non primitive
◦ Unit cells can be represented by 2D or 3D

◦ Among 14 types of 3D Bravais Lattices we studied cubic systems

◦ Next class we will study hexagonal systems
◦ Three cubic crystalline systems are
◦ Simple Cubic has one atom in the unit cell
◦ Face-centered Cubic (FCC) has 4 atoms in the unit cell
◦ Body-centered Cubic (BCC) has 2 atoms in the unit cell

◦ Atomic concentration is the ratio of the number of atoms per unit volume of unit cell.
◦ Atomic packing factor is the ratio of atom number with the volume of one atom to the volume of the unit cell.
 Questions
?

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Electrical Properties
of Materials
Lecture 3
Chap 1
 In this lecture we will going to
discuss ….
➢ Crystal planes,
➢ Miller Indices,
➢ Planer concentrations

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Recap
◦ Crystal structures are three types
◦ Single Crystalline, polycrystalline, amorphous

◦ Crystalline materials are geometrically represented by lattice and real representation of lattices are basis.
◦ Crystalline materials are consisted of unit cells which represent the whole crystal.
◦ Unit cells are primitive or non primitive
◦ Unit cells can be represented by 2D or 3D

◦ Among 14 types of 3D Bravais Lattices we studied cubic systems

◦ Next class we will study hexagonal systems
◦ Three cubic crystalline systems are
◦ Simple Cubic has one atom in the unit cell
◦ Face-centered Cubic (FCC) has 4 atoms in the unit cell
◦ Body-centered Cubic (BCC) has 2 atoms in the unit cell

◦ Atomic concentration is the ratio of the number of atoms per unit volume of unit cell.
◦ Atomic packing factor is the ratio of atom number with the volume of one atom to the volume of the unit cell.
 The diamond Diamond and Zinc
unit cell
Blende Crystals
❑ The diamond unit cell is cubic.
The cell has eight atoms. Grey Sn (α-
Sn) and the Elemental
semiconductors Ge and Si have this
crystal structure.

❑ The Zinc blende (ZnS) cubic

The Zinc blende (ZnS)
cubic crystal structure
crystal structure. Many important
compound crystal Structures have the
zinc blende structure. Examples:
AlAs, GaAs, Gap, GaSb, InAs, InP,
InSb, ZnS, ZnTe.
 EXAMPLE

The copper (FCC) Crystal Problem: Consider the FCC unit cell of the copper crystal shown in figure 1.39.
a. How many atoms are there per unit cell.
b. If R is the radius of the Cu atom, show that the lattice parameter a is given by a = R2√2.
c. Calculate the atomic packing factor (APF).
d. Calculate the atomic concentration (number of atoms per unit volume) in Cu and the density of the crystal given that the atomic mass of Cu is
63.55 g mol-1 and the radius of the Cu atom is 0.128nm.

Solution:
a. the number atoms in the unit cell = 8 corners X 1/8 atom + 6 faces X 1/2 atom = 4 atoms.

b. The face is a square of side a, and the face diagonal is √(a2 + a2) or a √ 2.
The diagonal has one atom at the center of diameter 2R, which touches two atoms centered at the corners.
The diagonal, going from corner to corner, is therefore R + 2R + R = 4R.
Thus, a √ 2 = 4R and a = 2 √ 2R.
Therefore, a = 2 √ 2 x (0.128 nm) = 0.362 nm.

Number of atoms in unit cell×Volume of one atom 4 4 4 4 𝑎 3

c. 𝐴𝑃𝐹 = = 3 𝜋𝑅3 = 𝜋 = 0.74 𝑜𝑟 74%
Volume of unit cell 𝑎 3 0.4084 3 3 2 2

d. If there is x atom in unit cell and each atom has mass of M at/NA grams, then density is
𝑀𝑎𝑡
Mass of all atoms in unit cell 𝑥 𝑁𝐴 4 63.55 g mol−1
𝜌= = = = 8.9 g cm−3
Volume of unit cell 𝑎3 0.3623 6.022 × 1023 mol−1
Crystal
Planes
◦ 1. Find the intercepts of the
plane with the crystal axes
and express these intercepts
as integral multiples of the
basis vectors (the plane can
be moved in and out from
the origin, retaining its
orientation, until such an
integral intercept is
discovered on each axis)
◦ 2. Take the reciprocals of the
three integers found in step
1 and reduce these to the
smallest set of integers h, k,
and l, which have the same
relationship to each other as
the three reciprocals.
◦ 3. Label the plane (hkl).
EXAMPLE
Miller
Indices
 EXAMPLE

h, k, and l are called the Miller indices which define a set of parallel planes
▪ Reciprocals of the intercepts avoid infinities in the notation.
▪ Intercept is infinity for a plane parallel to an axis → sign is reciprocal of such an
intercept is zero.
▪ If a plane passes through the origin, it can be translated to a parallel position –
integer multiple unit distance away – for calculation of Miller indices.
▪ If an intercept occurs on the negative branch of an axis, the minus placed above
the Miller index for that particular axis →(hkl)
Negative Miller indices-, (223ത ) and
1ത 1ത 1ത plane

O 1/2
1/2 -1

-1 O
-1/3

½, ½, -1/3 -1
(1ത 1ത 1)
ത
=(223ത )

Origin, O has to be shifted so that all the

three intercepts are obtained
 Example 1.14
Considering FCC lattice……….
ത
➢ Show the plane (012)
➢ Calculation of surface density/planar
concentration/planar density of (100), (110),
(111)
➢ Which plane is most densely packed? Given a
=0.3620 nm.

Miller Indices:
shifted the origin at O’
Now the intercepts are
(111) plane (∞ , -1, 1/2)

(01ത 2)
 Example 1.14
Planar concentration, (100)
No of atoms/area = 2/a2
Planar concentration, (110)
No of atoms/area = 2/a2√2
Planar concentration, (111)
No of atoms/area =
2/√3a2 /2
Considering, a = 0.3620 nm
Planar concentration of
➢ (100) plane is 15 atoms/nm2
➢ (110) plane is 10.8 atoms/nm2
➢ (111) plane is 17 atoms/nm2
So, (111) plane is most densely
packed and (110) is least densely
packed planes among (100),
(110), (111) planes
(111) plane
Surface density or planar concentration-
More examples
Hexagonal crystals → The Miller-
Bravais Indices (h k i l)
◦ Directions and planes in hexagonal lattices and crystals are designated by the i = −(h + k)
4-index Miller-Bravais notation.
◦ The Miller-Bravais notation can be a little tricky to learn.
◦ In the four index notation the following points are to be noted.
➢ The first three indices are a symmetrically related set on the basal plane.
➢ The third index is a redundant one (which can be derived from the first two as in the
formula: i = −(h+k) and is introduced to make sure that members of a family of directions or
planes have a set of numbers which are identical.
➢ This is because in 2D two indices suffice to describe a lattice (or crystal).
➢ The fourth index represents the ‘c’ axis (⊥ to the basal plane).
◦ Hence the first three indices in a hexagonal lattice can be permuted to get the different
members of a family; while, the fourth index is kept separate.
 EXAMPLE

Related to ‘l’ index

Miller-Bravais Indices for the Basal Plane

Related to ‘k’ index

Intercepts →    1
Plane → (0 0 0 1)
Related to ‘i’ index Related to ‘h’ index

Basal Plane
 EXAMPLE
Intercepts → 1 1 − ½  (h k i l)
Plane → (1 12 0) i = −(h + k)

a3

a2

Planes which have  intercept along c-

a1 axis (i.e. vertical planes) are called
Prism planes

The use of the 4 index notation is to bring out the equivalence between
crystallographically equivalent planes and directions (as will become clear in coming slides)
 EXAMPLE Obviously (related by 3-fold symmetry), the ‘green’
a3 and ‘blue’ planes belong to the same
family and first three indices have the
same set of numbers (as brought out by the
Miller-Bravais system)

a2

a1

Intercepts → 1 –1   Intercepts →  1 –1 
Miller (3 index) → (1 1 _ 0 ) Miller (3 index) → (0 1 _ 0) Planes which have  intercept along c-axis
(i.e. vertical planes) are called Prism
Miller-Bravais → (1 1 0 0 ) Miller-Bravais → (0 11 0) planes
 a3 EXAMPLE

Intercepts → 1 1 – ½ 
Plane → (1 12 0)

a2

a1
Intercepts → 1 –2 –2 
Plane → (2 11 0 )
 EXAMPLE

Inclined planes which have finite

intercept along c-axis are called
Pyramidal planes

Intercepts → 1 1 - ½ 1
Plane → (1 12 1)

Intercepts → 1  − 1 1
Plane → (1 01 1)
Summary
◦ Todays semiconductor technology’s raw material Si, Ge crystalline has the special diamond structure.

◦ Some promising semiconductor compound materials e.g. GaAs, InAs has Zincblend (two elements of diamond) structure.

◦ In the cubic crystal systems, two dimensional crystal planes are named according to Miller indices (hkl).
◦ h, k, l are the inverse of the intercepts of the plane in the x, y and z axis.
◦ Do not confuse with the three dimensional co-ordinate systems.
◦ Miller indices can be negative numbers as well.

◦ Planer concentrations are the ratio of the number of the atoms and the area of any 2D plane.

◦ For the Hexagonal crystal system, Miller indices are represented by (hkil) where i = -(h+k).
 Questions
?

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Electrical Properties
of Materials
Lecture 4
Chap 1
 In this lecture we will going to
discuss ….
➢ HCP directions and
➢ crystalline defects

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)
Recap
◦ Todays semiconductor technology’s raw material Si, Ge crystalline has the special diamond structure.

◦ Some promising semiconductor compound materials e.g. GaAs, InAs has Zincblend (two elements of diamond) structure.

◦ In the cubic crystal systems, two dimensional crystal planes are named according to Miller indices (hkl).
◦ h, k, l are the inverse of the intercepts of the plane in the x, y and z axis.
◦ Do not confuse with the three dimensional co-ordinate systems.
◦ Miller indices can be negative numbers as well.

◦ Planer concentrations are the ratio of the number of the atoms and the area of any 2D plane.

◦ For the Hexagonal crystal system, Miller indices are represented by (hkil) where i = -(h+k).
 Hexagonal
Directions
◦ One has to be careful in determining
directions in the Miller-Bravais system.
◦ Basis vectors a1, a2 & a3 are symmetrically
related by a six fold axis.
◦ The 3rd index is redundant and is included to
bring out the equality between equivalent
directions (like in the case of planes).
◦ In the drawing of the directions we use an
additional guide hexagon 3 times the unit basis
vectors (ai).
Guide Hexagon
 Hexagonal
Directions
❑Drawing the 𝟏𝟏𝟐𝟎 direction:
❑Trace a path along the basis vectors as required by
the direction. In the current example move
1unit along a1, 1unit along a2 and −2 units along a3.
❑Directions are projected onto the basis vectors to
determine the components and hence the Miller-
Bravais indices can be determined as in the table.

a1 a2 a3
Projections a/2 a/2 −a

Normalized wrt LP 1/2 1/2 −1

Factorization 1 1 −2

Indices [1 1 2 0]
 EXAMPLE

a1 a2 a3
Projections 3a/2 0 –3a/2
Normalized wrt
3/2 0 – 3/2
LP
Factorization 1 0 −1

Indices [1 0 –1 0]
Few notes about HCP directions
1
◦ [-2100] is not possible. This is because in three axis representation, the relation a3=-(a1+a2) or
i = -(h+k) must be satisfied.
◦ [-1100], [-2200], [-3300] and so on all are in the same direction.
◦ From figure to number determination, For drawing an understandable projection, the origin
should be transferred or shifted to a convenient position (where the arrow is located).
◦ From figure to number determination, For three integers notation, at first only two (the
adjacent two axes) should be considered, then using a3=-(a1+a2) or i = -(h+k) equation the
third one can be obtained.
◦ For any determination, at least two hexagon (co-centric) should be drawn.
Diamond structure(C, Si, Ge)
 Planar density of Si(110)

Exercise: 1.28
 Type Dimension Examples Figures
Crystalline Point 0 Vacancy,
Defects impurities
❑ There is no such thing as a 2 Grain
perfect crystal. boundary
❑ Crystals differ from the
ideal in that they possess
imperfections or defects.
Line 1 Dislocation
❑ Some defects are desirable
– impurity dopant (As, P,
s – edge,
or B, etc.) atoms in screw, or
intrinsic Si crystal. mixed
❑ Most defects are
undesirable as they
change electrical
properties of the crystal. Planar 2 Grain
❑ Types of defects in crystal: boundary
Point
Defects -
Vacancies
Above absolute zero – all
crystals have vacancies (=
atoms missing from lattice
points)

Vacancies exist as a
requirement of thermal
equilibrium.
(thermodynamic defects)

Vacancies introduce
disorder in crystal as they
upset the periodicity.
Point
Defects -
Impurities
Point defects
in ionic
crystals
Line
Defects
Dislocation in a
crystal is a line
defect which is
accompanied by
lattice distortion
and hence a lattice
strain around it
Line
Defects
A screw
dislocation
involves shearing
one portion of a
perfect crystal
with respect to
another portion on
one side of a line
(AB)
MIXED DEFECTS
Planar Defects
◦ When a liquid is cooled to below its
freezing temperature, solidification does
not occur at every point, instead it occurs
at certain sites called nuclei, which are
small crystal-like structures containing 50
to 100 atoms.
◦ Liquid atoms adjacent to a nucleus
diffuses into it – making it bigger. Nucleus
thus grows into a small crystal or a
crystallite (or grain).
◦ Nuclei are randomly oriented – therefore
– grains also exhibit random
crystallographic orientations during
growth.
 Planar Defects
◦ As the liquid between the grains is
consumed, some grains meet and obstruct
each other and the growth process
continues till the end of solidification. At
the end – the whole structure has grains
with irregular shapes and orientations.
Grains are separated from each other by
grain boundaries.
◦ The grain boundaries have broken bonds,
voids, vacancies, strained bonds and
“interstitial” type atoms. The structure of
❑ Atoms can diffuse more easily along a grain boundary the grain boundary is disordered and the
❑ Less bonds need to be broken atoms in the grain boundaries have higher
❑ Bonds are strained and easy to break
energies than those within the grains.
 Crystal Surfaces

◦ Periodicity inside a crystal does not

extend to infinity – crystals have real
Surface atoms cannot fulfil their bonding requirements and are left surfaces!
with dangling bonds. Ex.: Si atom bonds at the surface are left half
◦ Crystal surfaces exhibit
full, only having one electron.
Neighboring surface atoms can share each other’s dangling bonds ◦ dangling (incomplete or broken)
to form a surface bond and thus create reconstructed surface. This bonds
causes a slight displacement of the surface atoms. ◦ re-construction
Foreign atoms from environment can be captured by a dangling ◦ chemical absorption
bond at the surface and be absorbed chemically (chemisorbed).
◦ physical adsorption
Ex. Oxygen and hydrogen form primary bonds at Sisurface
(chemisorption). Foreign atoms from environment can be captured
by a dangling bond at the surface and be adsorbed physically. Ex.
Water molecules, which is polar, form secondary bonds at Sisurface
(physiosorption).
summary
◦ Hexagonal planes and directions are represented by 4 index systems (hkil) and [hkil], respectively.
◦ The directions can be drawn or determined using vector projections.
◦ For determination of HCP planes at least two co-centric hexagons should be drawn.

◦ Even though the Si has diamond structure, its planer concentration can be obtained using cubic system.

◦ Crystalline defects can be categorized 0D, 1D and 2D.

◦ Examples of 0D defects are vacancies, impurities
◦ Examples of 1D defects are Dislocations – edge, screw, or mixed
◦ Examples of 2D defects are grain boundary.

◦ Surface reconstruction plays important role for chemical or physical reactions.

 Question 1 What is the significance of unit cell in the formation of crystal structure? Calculate the volume of the unit
cell of zinc crystal with lattice constant a = 0.2665 nm and c = 0.4947 nm.
Question 2 Show that simple cubic crystal has the lowest atomic packing factor among the main three types of cubic
crystals.
Question 3 What is the importance of Miller indices in the crystal structure? Calculate and compare the APF of FCC

Assignment 01
and HCP crystal structures.
Question 4 Copper has a FCC crystal structure and an atomic radius of 0.1278 nm. Calculate the planar concentration
of the (100), (011) and (111) planes of the copper crystal.
Question 5 Write down the classifications of crystal defects and imperfections. With the help of figure briefly
describe the point defects in the crystal structure. Illustrate the influence of dislocation on device
performance.
Question 6 Niobium has a BCC crystal structure and an atomic radius of 0.3294 nm. Calculate the planar
concentration of the (200), (011) and (111) planes of the niobium crystal. The energy formation of a
vacancy in the germanium (Ge) crystal is about 2.2 eV.
Question 7 What are the importance of crystal direction and planes. Deduce the expression of lattice parameter for
zinc crystal c = 8 ,where the lattice parameters are a and c.
a 3
Question 8 With the help of following figure 8(a) & figure 8(b) identify the defect of both crystal structure and
briefly explain about these defect, where A+ represent cation and B- represent anion of the crystal.

DUE: Next Week

Figure 8(a) Figure 8(b)

Question 9 With the help of following figure 9 (a to d) indicate the miller and miller-bravais indices for A, B, C, D,
E, F, G, H, I and J planes which represent the crystal planes for cubic and HCP structure.

Figure 9
 Questions
?

From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)