20 STERN AVE.

TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (973) 376-8960

N-CHANNEL
IRF250/2511252/253 POWER MOSFETS

FEATURES
LOW RoS(on)
TO-3
Improved Inductive ruggedness
Fast switching times
Rugged polyslllcon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High current)

PRODUCT SUMMARY
Part Number Vps RoS(on) ID
IRF250 200V 0.0850 30A

IRF251 150V 0.0850 30A

IRF252 200V 0.120 2SA

IRF253 150V 0.120 25A

MAXIMUM RATINGS
Characteristic Symbol IRF2SO IRF251 IRF2S2 IRF2S3 Unit
Drain-Source Voltage (1) VDSS 200 150 200 150 Vdc
Drain-Gale Voltage (RGs=1.0MO)(1) VDOR 200 150 200 150 Vdc
Gate-Source Voltage Ves ±20 Vdc
Continuous Drain, Current Tc=25°C ID 30 30 25 25 Ado
Continuous Drain Current Tc-100°C ID 19 19 16 16 Adc
Drain Current— Pulsed (3) IDM 120 120 100 100 Adc
Gate Current— Pulsed IQM ±1.6 Adc
Total Power Dissipation @ Tc=25°C PD 150 Watts
Derate above 25°C 1.2 W/°C
Operating and Storage
Tj, Tstg -55 to 1 50 °C
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes. 1/8" from case for 5 seconds
TL 300 «c
Notes: (1) Tj=25"C to 150°C
(2) Pulse test: Pulse wldthOOOps, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

NJ Sem.-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use "
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.

Quality Semi-Conductors
 N-CHANNEL
IRF250/251/252/253 POWER MOSFETS

ELECTRICAL CHARACTERISTICS (TC=25-C unless otherwise specified)

Characteristic Symbol Type Mln Typ Max Units Tast Conditions

IRF250
200 - - V Ves=OV
IRF252
Drain-Source Breakdown BVoss
Voltage IRF261
150 - - ' V lD=250f<A
IRF253
Gate Threshold Voltage Vos<th) ALL 2.0 — 4.0 .V VDS=VGS, I0=250MA
Gate-Source Leakage Forward loss ALL - — - 100 nA Vss=20V
Gate-Source Leakage Reverse loss , ALL - — -100 nA vQS=-aov
- — 250 MA Vos-Max. Rating, Vos=OV
Zero Gate Voltage loss ALL
Drain Current — 1000 J»A Vos=Max. RatingXO.8, Vos=OV, Tc=125°C
—
IRF250
30 - - A
On-State Drain-Source IRF251
IDIWI) VDS>lD[dn)XRDS(on> max., VQS= 1 0V
Current (2) IRF252
25 - - A
IRF263
IRF250
IRF251
- 0.07 0.085 'n
Static Drain-Source On-State
Ros«jn) VQS=10V, ID=16A
Resistance (2) IRF252
- 0.09 0.120 0
IRF253
Forward Transconductance (2) gi> ALL 8.0 12.5 — 0 VDS>iO(on)XRDSlon)Tiux., lo=16A

Input Capacitance -Cfc. ALL - 2640 3000 pF

Output Capacitance COM ALL — 800 1200 PF VQS=OV, VDs=25V, f= 1.0MHz
Reverse Transfer Capacitance C/ss ALL — 300 500 PF
Turn-On Delay Time td(on) ALL — — 35 ns
Rise Time t, ALL — — 100 ns VDD=0.5BVoss, lD=1BA. Zo=4.7Q
(MOSFET switching times are essentially
Turn-Off Delay Time 1d(off) ALL — 125 ns independent of operating temperature.)
—
Fall Time t( ALL — — 100 ns
Total Gate Charge
Q8 ALL 68 120 nC
Gate-Source Plus' Gate-Drain) - Vas-lOV, lo=38A, V[>s=0,8 Max. Rating
— 18 — (Gate charge Is essentially Independent of
Gate-Source Charge QBS ALL nC
operating temperature. )
Gate-Drain ("Miller") Charge Q* ALL - 50 - nC

THERMAL RESISTANCE
Juhction-to-Case Rovic ALL — — 0.83 K/W
Case-to-Sink RlhCS ALL — 0.1 - K/W Mounting surface flat, smooth, and greased
Junction-to- Ambient RIWA 'ALL - - 30 K7W Free Air Operation

Notes: (1) Tj-26°C to 150°C

(2) Pulse test: Pulse wldthOOOpS, Duty Cycla<2%
(3) Repetitive rating: Pulse width limited by max. Junction temperatura
 N-CHANNEL
IRF250/251/252/253 POWER MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic Symbol Type Mln Typ Max Units Test Conditions
IRF250 30
- - A
Continuous Source Current IRF251
Is
(Body Diode) IRF252
- „ 26 A Modified MOSFET symbol /f- _tp
IRF253
showing the integral ojfl
IRF2SO reverse P-N junction rectifier 1
-is
- - 120 A
Pulse Source Current IRF251
ISM
(Body Diode) (3) IRF252
- - 100 . A
IRF253
IRF250
IRF251 - - 2.0 V TC=25°C. ls=30A, VOS=OV
Diode Forward Voltage (2) VSD
IRF252 1.8
IRF263 - - V Tc-250C. ls=25A, VGS=OV
Reverse Recovery Time fcr ALL - 750 — ns Tj-150'C, IF=30A. dlF/dt= 1 OOA/ps
Notes: (1) Tj=25°Cto 150-C (2) Pulse test: Pulse wldthOOOus, Duty Cycle<2%
(3) flepetitivo rating: Pulse width limited by max. Junction temperature

10 30 40 SO
VDS. ORAIN-TO-SOURCe VOLTAGE (VOLTS) Vot, OATE-TO-SOURC£ VOLTA06 (VOLTS)
Typical Output Characteristics Typical Transfer Chsracleilstics

0.4 06 1.2 16 1.0 2 S 10 20 SO 100 200 SOU 100O

VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, QRAIM-TMOURCE VOLTAOE (VOLTS)
Typical Saturation Characteristics Maximum Sal* Operating Ana