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General Description Product Summary: 30V N-Channel MOSFET
General Description Product Summary: 30V N-Channel MOSFET
D
DFN 3x3 EP
Top View Bottom View Top View
1 8
2 7
3 6
4 5 G
S
Pin 1
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 25 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 62 75 °C/W
Maximum Junction-to-Case B Steady-State RθJC 8.8 11 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
60 15
6V
10V VDS=5V
50
12
40
4.5V 9
ID (A)
ID(A)
30
6
20
VGS=3.5V
3 125°C
10
25°C
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
40 1.8
Normalized On-Resistance
35
1.6 VGS=10V
30
Ω)
RDS(ON) (mΩ
VGS=4.5V 1.4
17
25
5
1.2 2
20
VGS =4.5V
10
VGS=10V
1
15
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage Figure 4: On-Resistance vs. Junction
18Temperature
60 1.0E+01
ID=10A
1.0E+00
50
40
1.0E-01
Ω)
40
RDS(ON) (mΩ
125°C
IS (A)
1.0E-02
125°C
30 25°C
1.0E-03
20 1.0E-04
25°C
10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
10 600
VDS=15V
ID=10A 500
8
Ciss
Capacitance (pF)
400
VGS (Volts)
6
300
4
200 Coss
2
100
Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100 100
Power (W)
RDS(ON) 100µs 60 17
1 limited DC 1ms 5
10ms 40 2
10
0.1
TJ(Max)=150°C
20
Tc=25°C
0.01 0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Figure 9: Maximum Forward Biased Pulse Width (s)
18Junction-to-Case
Figure 10: Single Pulse Power Rating
Safe Operating Area (Note H)
(Note F)
10
D=Ton/T In descending order
Zθ JC Normalized Transient
RθJc=11°C/W 40
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
15 25
12
Power Dissipation (W)
20
6 10
3 5
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
°C)
TCASE (° °C)
TCASE (°
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)
10000
TA=25°C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance
1 RθJA=75°C/W
0.1
0.01
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds