Condensed Mattter Physics@Previous Year Questions Topic Wise Solved Questions

fiziks
Institute for NET/JRF, GATE, IIT‐JAM, M.Sc. Entrance, JEST, TIFR and GRE in Physics

1. Crystallography
Q1. The third-nearest neighbour distance in a BCC (Body Centered Cubic) crystal with lattice
constant a0 is
3a0
(a) a0 (b) (c) 3a0 (d) 2a0
2
NET/JRF (June-2019)
Q2. The two-dimensional lattice of graphene is an arrangement of Carbon atoms forming a
honeycomb lattice of lattice spacing a , as shown below. The Carbon atoms occupy the
vertices.
1
1
d2 c1
(A). The Wigner-Seitz cell has an area of
1
c2
1
1
3 2
1 1
a1 d1
(a) 2a 2 (b) a b1
2
1
a2 b2
a
2 3 3 2
(c) 6 3a (d) a
2
NET/JRF (JUNE-2011)
Q3. Hard disc of radius R are arranged in a two-dimensional triangular lattice. What is the
fractional area occupied by the discs in the closest possible packing?
 3   2 2
(a) (b) (c) (d)
6 3 2 5 7
NET/JRF (JUNE-2018)
Q4. Consider the crystal structure of sodium chloride which is modeled as a set of touching
spheres. Each sodium atom has a radius r1 and each chlorine atom has a radius r2 . The
centers of the spheres from a simple cubic lattice. The packing fraction of this system is
 r 3
  r2 
3
 2 r13  r23
(a)   1      (b)
 r1  r2   r1  r2   3 r1  r2 3
r13  r23 r13  r23

(c) (d) 
r1  r2 3 2r1  r2 
3
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1. Crystallography (Solution)
Ans. 1: (d)
3a0
Solution: The 1st nearest atom (I) is at distance   0.87a0
2
The 2nd nearest atom (II) is at distance  a0
The 3rd nearest atom (III) is at distance  2a0  1.414 a0

Ans. 2: (d)
 
Solution: Primitive lattice vectors are b1 and b2

b1  3a cos 300 iˆ  3a cos 600 ˆj 
2
3
a  3iˆ  ˆj 
   3 3 2
b2 
2
3
a  
3i  ˆj ,  A  b2  b1 
2
a
(B). The Bravais lattice for this array is a

 
(a) rectangular lattice with basis vectors d1 and d 2
 
(b) rectangular lattice with basis vectors c1 and c2
 
(c) hexagonal lattice with basis vectors a1 and a2
 
(d) hexagonal lattice with basis vectors b1 and b2
Ans. : (c)
 
Solution: The Bravais lattice for this array is the Hexagonal lattice with basis vectors a1 and a 2
Ans. 3: (a)
neff   r 2
Solution: P.F 
A
1 3 2 3 3 2 3 3
 2r   6 3r 2
2
where neff   6  1  3 and A  6  a  a 
3 4 2 2
3 r 2   3
P.F .   
6 3r 2 2 3 6
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Ans. 4: (b)
Solution: This question can only be solved by solving each option by assuming r1  r2 and

comparing result with the packing fraction of simple cubic which is .
6
  r 3  r 3    1 3  1 3  
Option (a):   1    2           
 r1  r2   r1  r2    2   2   4
2 r13  r23 2 2r 3 2 1 
Option (b):     
3  r1  r2 3 3 8r 3 3 4 6
r13  r23 2r 3 1
Option (c):  
 r1  r2 
3
8r 3 4
 r13  r23 2r 3 
Option (d):  
2  r1  r2 3 2  8r 3
8
Thus, correct option is (b)

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2. X-ray Diffraction and Reciprocal Lattice
0
Q1. A narrow beam of X - rays with wavelength 1.5 A is reflected from an ionic crystal with
an fcc lattice structure with a density of 3.32 gcm 3 . The molecular weight is 108 amu
( 1 amu  1.66 1024 g )

A. The lattice constant is
0 0 0 0
(a) 6.00 A (b) 4.56 A (c) 4.00 A (d) 2.56 A
NET/JRF (JUNE-2011)
Q2. X -ray of wavelength   a is reflected from the 111 plane of a simple cubic lattice. If
the lattice constant is a , the corresponding Bragg angle (in radian) is

   
(a) (b) (c) (d)
6 4 3 8
NET/JRF (JUNE-2015)
Q3. Sodium Chloride  NaCl  crystal is a face-centered cubic lattice with a basis consisting of
Na  and Cl  ions separated by half the body diagonal of a unit cube. Which of the
planes corresponding to the Miller indices given below will not give rise to Bragg
reflection of X -rays?
(a)  220  (b)  242  (c)  221 (d)  311
NET/JRF (JUNE-2018)
Q4. A crystal of MnO has NaCl structure. It has a paramagnetic to anti- ferromagnetic
transition at 120 K . Below 120 K , the spins within a single 111 planes are parallel but
the spins in adjacent 111 planes are antiparallel. If neutron scattering is used to
determine the lattice constants, respectively, d and d  , below and above the transition
temperature of MnO then
d d
(a) d  (b) d  (c) d  2d  (d) d  2d 
2 2
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Q5. When laser light of wavelength  falls on a metal scale with 1 mm engravings at a
grazing angle of incidence, it is diffracted to form a vertical chain of diffraction spots on
a screen kept perpendicular to the scale. If the wavelength of the laser is increased by 200
nm, the angle of the first-order diffraction spot changes from 5 0 to
(a) 6.60 0 (b) 5.14 0 (c) 5.018 0 (d) 5.210
NET/JRF (DEC-2014)
Q6. The first order diffraction peak of a crystalline solid occurs at a scattering angle of 300
when the diffraction pattern is recorded using an x-ray beam of wavelength 0.15 nm . If
the error in measurements of the wavelength and the angle are 0.01 nm and 10
respectively, then the error in calculating the inter-planar spacing will approximately be
(a) 1.1 102 nm (b) 1.3  104 nm (c) 2.5  102 nm (d) 2.0  103 nm
NET/JRF (DEC-2015)
Q7. Consider a hexagonal lattice with basis vectors as shown in the figure below.
y
x

a2 a
1
If the lattice spacing is a  1 , the reciprocal lattice vectors are
 4   2 2   4   2 2 
(a)  ,0,   ,  (b)  ,0,  , 
 3   3 3  3   3 3
 4   2   2 2   2 
(c)  0,  ,  ,  (d)  ,  ,  2 , 
 3   3  3 3  3
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2. X-ray Diffraction and Reciprocal Lattice (Solution)
Ans. 1: (a)
Solution: Given ne f f  4 , M = 108 kg,   3.32gm cm -3 = 3320 kgm-3,
N A  6.023 1026 atoms/kmol
ne f f  M 4  108
a3    6.00  10 30 m 3  6.00  10 10  6.00 A 0
NA   6.023  10  3320
26
B. The sine of the angle corresponding to (111) reflection is

3 3 1 1
(a) (b) (c) (d)
4 8 4 8
Ans. : (b)
Solution: According to Bragg’s law
 a a
2d sin    , sin   where d   for (111) plane
2d h k l
2 2 2
3
3 3  1.5 A0 3 3 3
 sin      .
2a 2 6A 0
2 6 2 8
Ans. 2: (c)
Solution: According to Bragg’s Law 2d sin   
a a a
where d    for 111 plane
h k l
2 2 2
111 3
 a 3  3 
 sin        sin 1   
2d a 2  2  3
2
3
Ans. 3: (c)
Solution: In NaCl crystal mixed  h k l  are absent. Th plane  221 is mixed number of even and
odd therefore this plane is absent in the NaCl and will not give rise to Bragg reflection
of X -rays.
Ans. 4: (c)
Solution: At 80 K there are extra reflection not present at 293 K .
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The reflection at 80 K may be classified in term of a cubic unit cell at lattice constant
0
8.85 A .
0
At 293 K the reflection corresponds to an FCC unit cell of lattice constant 4.43 A
d  a / 3 4.43 1
     d  2d 
d a / 3 8.85 2
Ans. 5: (c)
Solution: The condition of maxima peak in grating is
b sin   m ; m  0,1, 2,3,....
where b is the width of slit or width of engraving, whereas ‘ m ’ is the order of
diffraction and  is the angle of diffraction
For 1st order diffraction: b sin    (i)
When wavelength of incident light increased to    200 nm , let’s assume the 1st order
peak appears at    b sin      200 (ii)

Subtracting equation (i) from equation (ii), we get
b sin   b sin    200
200 200  109
 sin    sin    sin     sin 
b 10 3
 sin    2  10 4  sin   2  10 4  sin 50  2  10 4  0.087196  0.08736
    sin 1  0.08736     5.010
Ans. 6: (a)
 d 1 d  cos 
Solution: Bragg’s Law for n  1,   2d sin   d    , 
2sin   2sin   2sin 2 
Error in d can be calculated as
 d   d  2  1  2   cos   2
2 2 2
     2  
2
        
      2sin    2sin  
d

2
 d2  2sin   2   cos    2sin   2

2 2 2
1
 2           
d 2

4sin       2sin  sin     
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1
 2
 
2 2     2     2  2
  2
d
  d  d     
d 2
 tan 2      tan   
where   30o ,   1.5  1010 m,    0.11010 m,    1o
 1.5 1010
d   1.5  1010 m
2sin  2sin 30o
1
    
2 2 1
 0.11010   2
    3  
2 2
Thus,  d  1.5 1010    180    1.5  1010  0.067     

2
10 
 1.5 10   tan 30     180  
     
  
1 1
 1.5  10  0.067    0.03  2  1.5 1010  0.005389 2
10 2 2
 
 d  1.5 10  0.0734  0.111010  1.11011 m  1.1102 nm
10
Ans. 7: (a)
Solution: From the figure, we can write

a1 
3a
2
   
3 xˆ  yˆ , a2  3a yˆ , a3  azˆ (let us assume)
  
Now V  a1.  a2  a3  
3a
2
 3 xˆ  yˆ . 3ayˆ  azˆ 

3a
2
 
3 xˆ  yˆ . 3a 2 xˆ 
3 3 3
2

a
 
Also, a3  a1  az 
ˆ
3a
2

3x  y 
ˆ ˆ
3a 2
2

3 yˆ  xˆ  
Reciprocal lattice vectors are
 
* a2  a3 3a 2 xˆ 4 4
a1  2  2  xˆ  0 yˆ  xˆ  0 yˆ
V 3 3 3 3a 3
a
2
 
a3  a1
3 2
a 
3 yˆ  xˆ
2   2 2
*
a2  2
V
 2 2
3 3 3

3a
 xˆ  3 yˆ  
 3
 xˆ 
3
 
yˆ 

a
2
* 4  2 2
for a  1 : a1  xˆ  0 yˆ , a2*   xˆ  yˆ
3 3 3
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3. Crystal Bonding
Q1. The potential of a diatomic molecule as a function of the distance r between the atoms is
given by V r   
a b
6
 12 . The value of the potential at equilibrium separation between
r r
the atoms is:
(a)  4a 2 / b (b)  2a 2 / b (c)  a 2 / 2b (d)  a 2 / 4b
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3. Crystal Bonding (Solution)
Ans. 1: (d)
dV r 
Solution: Given V r   
a b
6
 12 . At equilibrium radius, 0
r r dr r r0
dV r  6a 12b r 13 12b 2b 2b
   7  13  0  07    r06 
dr r0 r0 r0 6a a a
a2 a2  a2
 The value of potential at equilibrium is V r0   
a b
     .
r06 r012 2b 4b 4b
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4. Lattice Vibration
Q1. Consider a system of non-interacting particles in d dimensional obeying the dispersion
relation   Ak s , where  is the energy, k is the wavevector, s is an integer and A is
constant. The density of states, N    , is proportional to
s d d s
1 1 1 1
(a)  d (b)  s
(c)  s
(d)  d
NET/JRF (JUNE-2012)
Q2. The dispersion relation of optical phonons in a cubic crystal is given by   k   0  ak 2
where 0 and a are positive constants. The contribution to the density of states due to
these phonons with frequencies just below 0 is proportional to
(a) 0    (b) 0    (c) 0    (d) 0   

1/ 2 3/ 2 2
NET/JRF (DEC-2018)
Q3. A uniform linear monoatomic chain is modeled by a spring-mass system of masses m
separated by nearest neighbour distance a and spring constant m 02 . The dispersion
relation for this system is
  ka    ka 
(a)  k   2 0 1  cos   (b)  k   2 0 sin 2  
  2   2 
 ka   ka 
(c)  k   2 0 sin   (d)  k   2 0 tan  
 2   2
NET/JRF (DEC-2013)
Q4. The dispersion relation of phonons in a solid is given by
 2 k    02 3  cos k x a  cos k y a  cos k z a 
The velocity of the phonons at large wavelength is
(a)  0 a / 3 (b)  0 a (c) 3 0 a (d)  0 a / 2
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Q5. The phonon dispersion for the following one-dimensional diatomic lattice with masses
M 1 and M 2 (as shown in the figure)
K
M1 M2 M1 M2
is given by
 1 1  4M 1 M 2  qa  
 2 q   K    1  1  sin 2   
 M 1 M 2   M 1  M 2  2
 2  
where a is the lattice parameter and K is the spring constant. The velocity of sound is
K M 1  M 2  K
(a) a (b) a
2M 1 M 2 2M 1  M 2 
K M 1  M 2  KM 1 M 2
(c) a (d) a
2M 1  M 2 
3
M 1M 2
NET/JRF (JUNE-2013)
Q6. Barium Titanate  BaTiO3  crystal has a cubic perovskite
structure, where the Ba 2 ions are at the vertices of a unit

cube, the O 2 ions are at the centres of the faces while the
Ti 2 is at the centre. The number of optical phonon modes of
the crystal is
(a) 12 (b) 15
Ti 4 Ba 2  O 2
(c) 5 (d) 18
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4. Lattice Vibration (Solution)
Ans. 1: (b)
Ans. 2: (a)
3 3
 L   L 
Solution: g  k  dk    4 k dk  
2
 4 k  kdk
 2   2 
1
Given   0  ak 2  k  0    and d  2akdk
1/ 2
 L  4
3
 g   d    3/ 2  0
 
1/ 2

 2  2a
Thus,     0   
1/ 2
Ans. 3: (c)
Solution: The dispersion relation for uniform linear mono-atomic chain of atoms is
 ka 
 k   2 0 sin  
 2 
Ans. 4: (d)
Solution: For large  , k x a, k y a, k z a  are small.
   kya

2 2
  k z2 a 2   02 a 2 2
 2 k    02 3  1 
  1 
 
k x2 a 2   1 
 
  
k x  k y2  k z2 
    2 2   2  2
 2a2 a d  0 a
 2 k   0 k 2    0 k  v g   .
2 2 dk 2
Ans. 5: (b)
Solution: For small value of q (i.e. long wavelength approximation limit).
 qa  qa
We have sin   
 2  2
 1 1  4M 1M 2 2  qa 

2 q       1  1  sin  
 M 1 M 2    M1  M 2   2  
2
 1  
2
4M 1 M 2  qa 
  2 q    
1
  1  1    
 M1 M 2   M 1  M 2 2  2  

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 1 1    1 4 M 1 M 2 q 2 a 2 
  2 q       1  1  
 2 M  M 2 4 

 1
M M 2    1 2 
 1 1    M 1 M 2 q 2 a 2 
  2 q       1  1 



 M 1 M 2    M 1  M 2  2 
2
 1   M 1 M 2 q 2 a 2 
For Acoustical branch:  2 q    
1
  1  1  
 
   M 1  M 2  2 
2
 M1 M 2
 M  M2  M 1 M 2 q 2 a 2  a 2
  2 q     1   
 M  M 2 2  2M  M  q
2
 M 1M 2  1 2  1 2

  q   aq
2M 1  M 2 
 
Velocity of sound is v g   a
q 2M 1  M 2 
Ans. 6: (a)
Solution: Effective number of atoms per unit cell is
1 1
neff   8   6  11  1  3  1  5
8 2
Total degree of freedom 5  3  15
The number of Acoustical phonon modes  3
The number of optical phonon modes 15  3  12
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5. Lattice Specific Heat
Q1. At low temperatures, in the Debye approximation, the contribution of the phonons to the
heat capacity of a two dimensional solid is proportional to
(a) T 2 (b) T 3 (c) T 1/ 2 (d) T 3/ 2
NET/JRF (DEC-2018)
Q2. The excitations of a three-dimensional solid are bosonic in nature with their frequency 
and wave-number k are related by   k 2 in the large wavelength limit. If the chemical
potential is zero, the behavior of the specific heat of the system at low temperature is
proportional to
(a) T 1/ 2 (b) T (c) T 3/ 2 (d) T 3
NET/JRF (DEC-2011)
Q3. Consider two crystalline solids, one of which has a simple cubic structure, and the other
has a tetragonal structure. The effective spring constant between atoms in the c -direction
is half the effective spring constant between atoms in the a and b directions. At low
temperatures, the behavior of the lattice contribution to the specific heat will depend as a
function of temperature T as
(a) T 2 for the tetragonal solid, but as T 3 for the simple cubic solid
(b) T for the tetragonal solid, and as T 3 for the simple cubic solid
(c) T for both solids
(d) T 3 for both solids
NET/JRF (DEC-2014)
Q4. Suppose the frequency of phonons in a one-dimensional chain of atoms is proportional to
the wave vector. If n is the number density of atoms and c is the speed of the phonons,
then the Debye frequency is
 cn
(a) 2 cn (b) 2 cn (c) 3 cn (d)
2
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Q5. For T much less than the Debye temperature of copper, the temperature dependence of
the specific heat at constant volume of copper, is given by (in the following a and b are
positive constants)
 a 
(a) aT 3 (b) aT  bT 3 (c) aT 2  bT 3 (d) exp   
 k BT 
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5. Lattice Specific Heat (Solution)
Ans. 1: (a)
Solution: The dispersion relation of phonons is   AK
The phonon specific heat in d -dimension is CV  T d
For 2 dimensional solid d  2

CV  T 2
Ans. 2: (c)
Solution: If the dispersion relation is   k s in large wavelength. Then the specific heat is
C v  T 3 / s . Given   k 2  C v  T 3 / 2
Ans. 3: (d)
Solution: The specific heat of solid in three dimensions is proportional to T 3 and it is
independent of crystal structure.
In 3D : CV  T 3
In 2D : CV  T 2
In 1D : CV  T
Ans. 4: (d)
Solution: Given   k    ck ( c is velocity of phonon)
d
L L
Now g   d   d
 d / dk c
D L D L
Also N   g   d    d  N  D
0 c 0 c
N  N cn
 D  c  c n,  n    f D  . Best answer is (d).
L  L 2
Ans. 5: (b)
Solution: The specific heat of model is sum of electric and phonon specific heat
C  Ce  C ph
For T   0 : C Ph  bT 3 and Ce  aT  C  aT  bT 3
Thus correct option is (b)
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6. Free Electron Theory
Q1. If the energy dispersion of a two-dimensional electron system is E  uk where u is the
velocity and k is the momentum, then the density of states DE  depends on the energy
as
(a) 1 / E (b) E (c) E (d) constant
NET/JRF (JUNE-2013)
Q2. Consider electrons in graphene, which is a planar monoatomic layer of carbon atoms. If
the dispersion relation of the electrons is taken to be   k   ck (where c is constant)
over the entire k -space, then the Fermi energy  F depends on the number density of
electrons  as
1 2 1
(a)  F   2
(b)  F   (c)  F  (d)  F  
3 3
NET/JRF (JUNE-2016)
1 
Q3. The dispersion relation of a gas of spin fermions in two dimensions is E  v k ,
2

where E is the energy, k is the wave vector and v is a constant with the dimension of
velocity. If the Fermi energy at zero temperature is F , the number of particles per unit
area is
F 3F  3/F 2 2F
(a) (b) (c) (d)
 4 v   6 2 v 33   3v  
3 3
 2 v 2  2 
NET/JRF (DEC-2017)
Q4. A thin metal film of dimension 2 mm  2 mm contains 4  10 electrons. The magnitude
12
of the Fermi wavevector of the system, in the free electron approximation, is

(a) 2   107 cm 1 (b) 2  107 cm1 (c)   107 cm 1 (d) 2  107 cm1
NET/JRF (DEC-2015)
Q5. If the number density of a free electron gas in three dimensions is increased eight times,
its Fermi temperature will
(a) increase by a factor of 4 (b) decrease by a factor of 4
(c) increase by a factor of 8 (d) decrease by a factor of 8
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Q6. The radius of the Fermi sphere of free electrons in a monovalent metal with an fcc
structure, in which the volume of the unit cell is a3, is
1/ 3 1/ 3 1/ 3
 12 2   3 2   2  1
(a)  3  (b)  3  (c)  3  (d)
 a   a  a  a
NET/JRF (DEC-2012)
Q7. The pressure of a nonrelativistic free Fermi gas in three-dimensions depends, at T  0 ,
on the density of fermions n as
(a) n 5 / 3 (b) n1 / 3 (c) n 2 / 3 (d) n 4 / 3
NET/JRF (JUNE-2014)
Q8. Consider a one-dimensional chain of atoms with lattice constant a . The energy of an
electron with wave-vector k is   k      cos  ka  , where  and  are constants. If
an electric field E is applied in the positive x -direction, the time dependent velocity of
an electron is
(In the following B is the constant)
 eE 
(a) Proportional to cos  B  at  (b) proportional to E
  
 eE 
(c) independent of E (d) proportional to sin  B  at 
  
NET/JRF (DEC-2016)
Q9. A magnetic field sensor based on the Hall Effect is to be fabricated by implanting. As
into a Si film of thickness 1 m . The specifications require a magnetic field sensitivity of
500 mV/Tesla at an excitation current of 1 mA. The implantation dose is to be adjusted
such that the average carrier density, after activation, is
(a) 1.25 × 1026 m-3 (b) 1.25 × 1022 m-3
(c) 4.1 × 1021 m-3 (d) 4.1 × 1020 m-3
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Q10. A thin rectangular conducting plate of length a and width b is placed in the xy -plane in
two different orientations as shown in the figures below. In both cases a magnetic field B
is applied in the z -direction and a current flows in the x direction due to the applied
voltage V . b
y B
B
x a
V1 a
V1 b
   
V V
If the Hall voltage across the y -direction in the two cases satisfy V2  2V1 the ratio a : b
must be
(a) 1: 2 (b) 1: 2 (c) 2 :1 (d) 2 :1
NET/JRF (DEC-2016)
Q11. Consider a two-dimensional material of length l and width w subjected to a constant
magnetic field B applied perpendicular to it. The number of change carries per unit area
B
may be expressed as n  k q , where k is appositive real number and q is the
 2  
carrier charge. Then the Hall resistivity  xy is
2 k l 2  w 2  2 k
(a) (b) (c) (d)
q2 w kq 2 l kq 2 q2
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Q12. The Hall coefficient for a semiconductor having both types of carriers is given as
p  p2  n n2
RH 
e  p  p  n n 
2
where p and n are the carrier densities of the holes and electrons,  p and  n are their
respective mobilities. For a p - type semiconductor in which the mobility of holes is less
than that of electrons, which of the following graphs best describes the variation of the
Hall coefficient with temperature?
RH
RH
(a) (b)
RH  0 T
RH  0 T
(c) RH (d) RH
RH  0 RH  0 T
T
Q13. Using the frequency-dependent Drude formula, what is the effective kinetic inductance of
a metallic wire that is to be used as a transmission line? [In the following, the electron
mass is m , density of electrons is n , and the length and cross-sectional area of the wire
 and A respectively.]

(a) mA / ne 2   (b) zero 
(c) m / ne 2 A  
(d) m A / ne 2  2 
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Q14. The electrical conductivity of copper is approximately 95% of the electrical conductivity
of silver, while the electron density in silver is approximately 70 % of the electron
density in copper. In Drude’s model, the approximate ratio  Cu /  Ag of the mean collision
time in copper  Cu  to the mean collision time in silver  Ag  is
(a) 0.44 (b) 1.50 (c) 0.33 (d) 0.66

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6. Free Electron Theory
Ans. 1: (c)
Solution: In two-dimensional system, the number of allowed k-states in range k and k  dk is
2
 L 
g k dk    2kdk .
 2 
E dE
Given dispersion relation is E  uk  k   dk 
u u
 L  2
2 2
 L 
 g E dE  
E dE
 2     EdE
 2  u u  2  u 
2
g E dE 1 L2
  E    E.
dE u 2 2
Ans. 2: (a)
Solution: In 2D , density of state is
 L   d
g  k  dk    2 kdk , where   ck  k  and dk 
 2  c c
 d
2
 L  L2
 g   d     2  .   d
 2  c c 2 c 2
Now, number electrons at T  0 K is
F L2 F L2 2 N
N  g   d     d     F2  4 c 2 2  4 c 2 
0 2 c 2 0 4 c 2 F
L
  F  4 c 2  1/ 2   F   1/ 2
Ans. 3: (d)
 E dE
Solution: E  v k  k   dk 
v v
E dE  L  4
2 2
 L 
g  E  dE  2   .2 . .   . E.dE.
 2  v v  2   v 2
at T  0 K ,
L2 4 2F
EF
N  g  E dE  .
0
4 2  v 2 2
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2
L
N 2F
2  2 v 2
N 2F
n 
L2 2 v 2  2
Ans. 4: (b)
Solution: This is the case of two-dimensional metal box. The Fermi wave vector of electron in
2  D is
1
1
 N 2
k F   2 n  2   2 2  ; L2  2mm  2mm  4  102 cm 2 ,
 L 
1
 4  1012  2 1
 k F  2  2 2 
 2 1014
cm 
2 2
 2 107 cm 1
 4 10 cm 
Ans. 5: (a)
Solution: The relation between Fermi energy and electron density is E F 
2
2m

3 2 n 2/3
.
 E F' 
2
2m

3 2  8n 
2/3
 4 E F  TF' 
4 EF
EF
TF  4TF
Ans. 6: (a)
1/ 3
 3 2 N   2    2 k F2 
 
2/3
Solution: Radius of Fermi sphere is k F    , EF    3 2
n   
 V   2m   2m 
1/ 3
N 4  12 2 
For fcc solid   k F   3  .
V a3  a 
Ans. 7: (a)
Solution: The Fermi energy in three dimensions is defined as
2/3
 2  3 2 N 
EF  
2m  V 
 
2
2m

3 2 n 2/3
Where, n is the electron concentration or density of free Fermi gas.

The total energy of free Fermi gas in 3D is
2/3
3 3  2  3 2 N 
E  NE F  N   
5 5 2m  V 
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The pressure of a nonrelativistic free Fermi gas is defined as
 E 
p F  
3
  N
2
3 2 N     V 5 / 3
2/3  2
 V  N 5 2m  3

2
5
2
nEF  n 
5
2
2m
3 2 n  
2/3 2 2
5 2m
3 2  n 5 / 3
2/3
Ans. 8: (d)
Solution: In the presence of electric field E , we can write
   
dp dk
F  eE   eE    eE
dt dt
eE
Integration gives, k  t   k  0   t

d  1   k 
The group velocity v  
dk  dk
  k 
Since,   k      cos  ka  ,    a sin ka
k
a
Thus, v  sin  ka 

Time dependent velocity of electron is
a a  eE  
v t   sin  k  t  a   sin  k  0   ta
     
a  eE  a  eE 
 sin  k  0  a  at   v  t   sin  B  at
       
Ans. 9: (b)
IB 103 1 V
Solution: n   6 19
 3
 1.25 1022 m 3 where H  500  10 3 V / T .
teVH 10  1.6 10 500 10 B
Ans. 10: (d)
IB
Solution: Since, Hall voltage is given by VH  , where w is width of conducting plate.
w
 l1 a 
Since, in case (I), V  I1 R1 and R1   
A1 ab b
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I1  bV
V  I1 
b 
I1 B bVB bVB
Then, VH  V1     w  a 
w 2w 2a
 l2 b 
And also in case (II), R2   
A2 ab a
V Va
V  I 2 R2  I 2  
R2 
I 2 B VaB
Then, VH  V2  
 w  2b
a2 2
Since, V2  2V1    a : b  2 :1
b2 1
Ans. 11: (c)
A VH A
Solution:  xy  R    A  lw 
l I l
IB
where, VH 
nqw
B A B B 2 
  xy      2
nqw l nq k  q B  q kq
2 
Ans. 12: (d)
Solution: Case I: At low temperature: p  n,  p   n
 p  p2  n n2  p  p2  n n2  0
 RH  Positive
p
Case II: At moderate temperature 1
n
 p  p2  n n2 (since  p   n )
 RH  0
p
Case III: At high temperature 1
n
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 p  p  n n  0
2 2
(since  p   p )
 RH  0
Thus graph (d) correctly repeated the variation of RH with respect to temperature
Ans. 13: (c)
Ans. 14: (d)
ne 2  n    n
Solution:    cu  cu cu  cu  cu  Ag
m  Ag nAg  Ag  Ag  Ag ncu
 cu 0.95 Ag 0.7ncu
    0.66
 Ag  Ag ncu
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7. Band Theory
Q1. Consider an electron in bcc lattice with lattice constant a . A single particle wavefunction


  
that satisfies the Bloch theorem will have the form f r  exp ik .r , with f r  being
 2   2   2 
(a) 1  cos   x  y  z   cos   x  y  z   cos   x  y  z 
 a   a   a 
 2   2   2 
(b) 1  cos   x  y   cos   y  z   cos   z  x 
 a   a   a 
     
(c) 1  cos   x  y   cos   y  z   cos   z  x 
a  a  a 
     
(d) 1  cos   x  y  z   cos   x  y  z   cos   x  y  z 
a  a  a 
NET/JRF (JUNE-2014)
Q2. For an electron moving through a one-dimensional periodic lattice of periodicity a ,
which of the following corresponds to an energy eigenfunction consistent with Bloch’s
theorem?
  x   x  
(a)   x   A exp  i   cos   
  a  2a   
  x  2 x   
(b)   x   A exp  i   cos   
  a  a  
  2 x  2 x   
(c)   x   A exp  i   i cosh   
  a  a  
  x  x 
(d)   x   A exp  i  i 
  a 2a  
NET/JRF (DEC-2015)
Q3. The low-energy electronic excitations in a two-dimensional sheet of grapheme is given

 
by E k  vk , where v is the velocity of the excitations. The density of states is
proportional to
3 1
(a) E (b) E 2 (c) E 2 (d) E 2
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Q4. A metallic nanowire of length l is approximated as a one-dimensional lattice of N
atoms with lattice spacing a . If the dispersion of electrons in the lattice is given
as E  k   E0  2t cos ka , where E0 and t are constants, then the density of states inside
the nanowire depends on E as
 E  E0 
2
t2
(a) N 3
E  E0
(b)  2t   1
 
E  E0 N
(c) N 3 (d)
t2  2t    E  E0 
2 2
NET/JRF (DEC-2017)
Q5. The dispersion relation for the electrons in the conduction band of a semiconductor is
given by E  E0   k 2 where  and E0 are constants. If c is the cyclotron resonance
frequency of the conduction band electrons in a magnetic field B , the value of  is

c 2 2c  2c  2c
(a) (b) (c) (d)
4eB eB eB 2eB
NET/JRF (JUNE-2018)
Q6. In a band structure calculation, the dispersion relation for electrons is found to be
 k   cos k x a  cos k y a  cos k z a ,
where β is a constant and a is the lattice constant. The effective mass at the boundary of
the first Brillouin zone is
2 2 4 2 2 2
(a) (b) (c) (d)
5 a 2 5 a 2 2 a 2 3 a 2
NET/JRF (DEC-2012)
Q7. The energy of an electron in a band as a function of its wave vector k is given
by E k   E 0  B cos k x a  cos k y a  cos k z a  , where E0 , B and a are constants. The
effective mass of the electron near the bottom of the band is

2 2 2 2 2
(a) (b) (c) (d)
3Ba 2 3Ba 2 2Ba 2 Ba 2
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Q8. The dispersion relation of electrons in a 3-dimensional lattice in the tight binding
approximation is given by,
 k   cos k x a   cos k y a   cos k z a
where a is the lattice constant and  ,  ,  are constants with dimension of energy. The
   
effective mass tensor at the corner of the first Brillouin zone  , ,  is
a a a
 1/  0 0   1/  0 0 
2   2  
(a) 2  0 1/  0  (b) 2  0 1/  0 
a  a 
 0 0 1/    0 0 1/  
 1/  0 0  1/  0 0 
2   2  
(c) 2  0 1/  0  (d) 2  0 1/  0 
a  a 
 0 0 1/    0 0 1/  
NET/JRF (DEC-2015)
Q9. The dispersion relation for electrons in an f.c.c. crystal is given, in the tight binding
approximation, by
 kxa kya kya k a k a k a
 k   4 0 cos cos  cos cos z  cos z cos x 
 2 2 2 2 2 2 
where a is the lattice constant and  0 is a constant with the dimension of energy. The x -
 
component of the velocity of the electron at  , 0, 0  is
a 
(a)  2 0 a /  (b) 2 0 a /  (c)  4 0 a /  (d) 4 0 a / 
NET/JRF (JUNE-2014)
Q10. The band energy of an electron in a crystal for a particular k -direction has the form
  k   A  B cos 2ka , where A and B are positive constants and 0  ka   . The
electron has a hole-like behaviour over the following range of k :
 3   
3
(a)  ka  (b)  ka   (c) 0  ka  (d)  ka 
4 4 2 4 2 4
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Q11. The energy gap and lattice constant of an indirect band gap semiconductor are 1.875 eV
and 0.52 nm , respectively. For simplicity take the dielectric constant of the material to be
unity. When it is excited by broadband radiation, an electron initially in the valence band
at k  0 makes a transition to the conduction band. The wavevector of the electron in the
conduction band, in terms of the wavevector kmax at the edge of the Brillouin zone, after
the transition is closest to
(a) kmax /10 (b) kmax /100 (c) kmax /1000 (d) 0
NET/JRF (JUNE-2017)
Q12. The electron dispersion relation for a one-dimensional metal is given by
 ka 1 2 
 k  2 0 sin 2  sin ka 
 2 6 
where k is the momentum, a is the lattice constant,  0 is a constant having dimensions of
energy and ka   . If the average number of electrons per atom in the conduction band
is 1/3, then the Fermi energy is

(a)  0 / 4 (b)  0 (c) 2 0 / 3 (d) 5 0 / 3
NET/JRF (JUNE-2013)
Q13. The experimentally measured transmission spectra of metal, insulator and semiconductor
thin films are shown in the figure. It can be inferred that I, II and III correspond,
respectively, to
 
Transmission (%)
(a) Insulator, semiconductor and metal

(b) Semiconductor, metal and insulator
(c) Metal, semiconductor and insulator
(d) Insulator, metal and semiconductor 
300 1000
Wavelength (nm)
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Q14. The physical phenomenon that cannot be used for memory storage applications is
(a) Large variation in magneto resistance as a function of applied magnetic field
(b) Variation in magnetization of a Ferro magnet as a function of applied magnetic field
(c) Variation in polarization of a ferroelectric as a function of applied electric field
(d) Variation in resistance of a metal as a function of applied electric field
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7. Band Theory (Solution)
Ans. 1: (b)
Solution: The primitive translational vector for BCC is
 a
 a
2
  2
  a
 
a '  iˆ  ˆj  kˆ , b '  iˆ  ˆj  kˆ , c '  iˆ  ˆj  kˆ
2

Bloch function defined as
  
 
 k r   u k r e ik .r  f r e ik .r

Here f r  is atomic wavefunction, which has the periodicity of the lattice i.e.
 
u k r  a   u k r 
Given Bloch function
  2   2   2 
f (r )  1  cos   x  y    cos   y  z    cos   z  x  
 a   a   a 
   2  a a   2  a a   2  a a 
f (r  a ' )  1  cos   x  y     cos   y  z     cos   z  x   
 a  2 2   a  2 2   a  2 2 
   2   2   2 
f (r  a ' )  1  cos   x  y   cos   y  z   2   cos   z  x 
 a   a   a 
   2   2   2  
f (r  a ' )  1  cos   x  y   cos   y  z   cos   z  x   f (r )
 a   a   a 
 ' 
f (r  a )  f (r )
Similarly,
     
f (r  b ' )  f (r ) and f ( r  c ' )  f ( r )
Other functions do not satisfy the periodicity
Ans. 2: (b)
Solution: According to block theorem,   x  a     x 
   2    x 2 x   
  x  a   A exp i   x  a   cos   x  a      A exp i      cos   2   
  a  a      a   a   
  2 x   x 2 x  
 A exp i   x  a   cos   A exp i   cos 
 a a   a a  
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Ans. 3: (a)
Solution: The number of k - states in range k and k  dk in two dimension is
2
 L 
g  k  dk    2 kdk
 2 
2
2 2
 L  E dE  L 
 E   k  dE   dk  g  E  dE    2     EdE
 2     2    
2
The density of state is

g  E  dE 2
2
 L 
 E    E   E  E
 2    
2
dE
Ans. 4: (d)
Solution: E  k   E0  2t cos ka
dE
dE  2ta sin ka dk  dk 
2 ta sin ka
2L 2L dE
 g  E  dE  dk 
  2 ta 1  cos 2 ka
L dE 2L dE
 
 ta E E
2 a  2t    E  E0 
2 2
1  0 
 2t 
 Density of state is,
g  E  dE 2N
 E  
dE   2t    E  E0 
2 2
Ans. 5: (d)
eB 2
Solution: c  where m *

m* d 2 E / dk 2
d 2E
Since E  E0   k 2   2
dk 2
eB 2  2c
 c  2  2 eB   
 / 2  2eB
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Ans. 6: (d)
Solution:  k   cos k x a  cos k y a  cos k z a , Effective mass m  

2
 d 2 k 
 2 
 d k 
 
  
Brilliouin zone boundary is at k x   ,ky   , kz   .
a a a
 d 2  2
Hence  2 k   3 a 2  m   .
 d k  , ,
   3 a 2
a a a
Ans. 7: (d)
Solution: Near the bottom of the band the k  0
 k x a  , cos k y a  1   k y a  , cos k z a  1   k z a 
1 2 1 2 1 2
cos k x a  1 
2 2 2
 1 2
E  k   E0  B  cos k x a  cos k y a  cos k z a   E0  B 1   k x a   1   k y a   1   k z a  
2 1 2 1
 2 2 2 
 1 2 1
 E0  B  3  a 2  k x  k x  k x    E0  3B  Ba 2 k 2
 2  2
 2
2
Effective mass of the electron is m *  2 
d E / dk 2 Ba 2
Ans. 8: (c)
Solution: The effective mass as a tensor quantity can be written as
 m*xx m*xy m*xz 
  2
mij*   m*yx m*yy m*yz  where mij* 
 2E 
 m*zx m*zy m*zz   

 ki k j 
since  k   cos k x a   cos k y a   cos k z a
2  2 2 2
 m*xx   , m*yy  
  2   a 2 cos k x a   2   a 2 cos k y a
   2 
 k x k x   k y 
2 2
m*zz   , other terms are zero
  2   a 2 cos k z a
 2
 k z 
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1/  0 0 
    * 2 2 2 2 
Now, at  , ,  ; mxx  , m yy 
*
, mzz  2  mij  2  0 1/ 
* *
0 
a a a a 2
a 2
a a
 0 0 1/  
Ans. 9: (d)
Solution: Group velocity of electron in dispersive medium is expressed as
 1 d 1  d ˆ d ˆ d    
v   i j kˆ   v x iˆ  v y ˆj  v z kˆ
 dk   dk x dk y dk z 
 kx a kya ka k a  ka kya kya k a 
 sin cos  cos z sin x  iˆ   cos x sin  sin cos z  ˆj  
 2 a  2 2 2 2   2 2 2 2  
v 0  

  sin k z a cos y  cos k x a sin k z a  kˆ
k a

  2 2 2 2  
 
At  , 0, 0 
a 
 2 a         
v  0  sin cos 0  cos 0sin  iˆ   cos sin 0  sin 0cos 0  ˆj   cos 0sin 0  sin 0cos  kˆ 
  2 2  2   2 
 4 a   
v  0 iˆ  0 ˆj  0kˆ    0iˆ  0 ˆj  0kˆ   vx iˆ  v y ˆj  vz kˆ
    
 4 a   4 0 a
vx  0 , v y  0, vz  0 , The x - component of velocity is vx 
 
Ans. 10: (a)
d d 2
Solution:   k   A  B cos 2ka , 2 Ba sin 2ka ,  4 Ba 2 cos 2ka
dk dk 2
2 2
Effective mass m*  2 
d  / dk 2 4 Ba 2 cos 2ka
   
Effective mass of electron me* and effective mass of holes mh* are opposite in sign i.e.,
m *
h  me* .

Now, in the range 0  ka  , m* is positive
4
 3
While in the range  ka  , m* is negative
4 4
 3
Thus, electron has hole like behaviour in the region  ka 
4 4
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Ans. 11: (a)
Solution: The K  value of electron in C.B. is
2mE  2  9.1 10 kg 1.875 1.6  10 J  

1/ 2
31 19
K   K  7 109 m 1
 1.05  1034 J .S .
2 2  3.14 K
K max at the Brillouin Zone is K max   9
 1.2 1010 m 1  K  max
a 0.52 10 m 10
Ans. 12: (a)
Ans. 13: (a)
Ans. 14: (d)
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8. Superconductor
Q1. The critical magnetic fields of a superconductor at temperatures 4 K and 8 K are
11 mA / m and 5.5 mA / m respectively. The transition temperature is approximately
(a) 8.4 K (b) 10.6 K (c) 12.9 K (d) 15.0 K
NET/JRF (JUNE-2015)
Q2. A flux quantum (fluxoid) is approximately equal to 210-7 gauss-cm2. A type II
superconductor is placed in a small magnetic field, which is then slowly increased till the
field starts penetrating the superconductor. The strength of the field at this point is
2
 105 gauss.

A. The penetrating depth of this superconductor is
0 0 0 0
(a) 100 A (b) 10 A (c) 1000 A (d) 314 A
NET/JRF (JUNE-2011)

Q3. A superconducting ring carries a steady current in the presence of a magnetic field B
normal to the plane of the ring. Identify the INCORRECT statement.
(a) The flux passing through the superconductor is quantized in units of hc / e
(b) The current and the magnetic field in the superconductor are time independent.
   
(c) The current density j and B are related by the equation   j  2 B  0 , where 
is a constant
(d) The superconductor shows an energy gap which is proportional to the transition
temperature of the superconductor
NET/JRF (DEC-2014)
Q4. A DC voltage V is applied across a Josephson junction between two superconductors
with a phase difference 0 . If I 0 and k are constants that depend on the properties of the
junction, the current flowing through it has the form
 2eVt   2eVt 
(a) I 0 sin   0  (b) kV sin   0 
     
(c) kV sin  0 (d) I 0 sin  0  kV
NET/JRF (DEC-2013)
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Q5. In the AC Josephson effect, a supercurrent flows across two superconductors separated
by a thin insulating layer and kept at an electric potential difference V . The angular
frequency of the resultant supercurrent is given by
2eV eV eV eV
(a) (b) (c) (d)
   2 
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8. Superconductor (Solution)
Ans. 1: (b)
Solution: The relation between critical field and critical temperature is
  T 2 
H C T   H 0 1    
  TC  
Let at T  T1 , H C T1  , T  T2 , H C T   H C T2 
  T 2    T 2 
Thus we get H C T1   H 0 1     , H C T2   H 0 1   2  
1
  TC     TC  
H C T1  2
2
T 
1  1  T2  T12
H C T1    T  H C T2  2 8   4 
2 2
  C
T
 TC   10.6
H C T2  T 
2 C
H C T1  2 1
1  2  1
H C T2 
 TC
where T1  4 k , T2  8 k , H C T1   11 mA / m and H C T2   5.5 mA / m
Ans. 2: (a)
Solution: Given Fluxoid  0  2  10 7 gauss –cm2
First Critical field H c1  

2
 10 5 gauss

The relation between first critical field and penetration depth is
0 0 2  107 0
H c1    2
   1012 cm 2    10 6 cm  100 A
2
 H c1   2  105

B. The applied field is further increased till superconductivity is completely destroyed.
8
The strength of the field is now  105 gauss. The correlation length of the

superconductor is
0 0 0 0
(a) 20 A (b) 200 A (c) 628 A (d) 2000 A
Ans. : None of the options is matched.
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Solution: Given second critical field H c 2    10 5 gauss. The relation between second critical
8

0
field and correlation length is H c 2  .
 2
0 2 107 1 1 100 0
 2    1012 cm 2     106 cm   1010 m  50 A
 H c2 8
  105 4
2 2

Ans. 3: (a)
Solution: The flux quantization in superconducting ring is   no
hc h
where o  in CGS units and o  in MKS units.
2e 2e
Ans. 4: (a)
Solution: In AC Josephson effect when a dc voltage V is applied across the junction then a RF
Insulator
current flows. The current density is
 2eV  SC
J  J 0 sin  t   SC
  
So, the best suitable answers is option (a)
V
Ans. 5: (a) Insulator
Solution: Current density through thin insulating layer is
 2 v  SC SC
J  J 0 sin   0   t  J 0 sin   0   t 
  
2 v V
the angular frequency of the super current is   

Thus correct option is (a)
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9. Crystal Defect
Q1. The energy required to create a lattice vacancy in a crystal is equal to 1 eV. The ratio of
the number densities of vacancies n(1200 K)/n(300 K) when the crystal is at equilibrium
at 1200 K and 300 K, respectively, is approximately
(a) exp 30  (b) exp 15 (c) exp15 (d) exp30
NET/JRF (JUNE-2012)
Q2. For a crystal, let  denote the energy required to create a pair of vacancy and interstitial
defects. If n pairs of such defects are formed, and n  N , N  , where N and N  are
respectively, the total number of lattice and interstitial sites, then n is approximately
(a) NN e  /  2 kBT  (b) NN e  /  kBT 
1 1
(c)  N  N   e  /  2 k B T  (d)  N  N   e  /  k BT 
2 2
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9. Crystal Defect (Solution)
Ans. 1: (d)
Solution: The equation for number density of vacancies n  Ne  E / 2 k BT where E: Energy required
to form vacancies, N: density of lattice sites
E  1 1
n1200K 
E  1 1  E  1 
n e  E / 2 k BT1        
 1   E / 2 k BT2  e B  2 1  ,  e 2 k B  300 1200   e 2 k B  400   e 30
2k T T
n2 e n300 K 
Ans. 2: (a)
Solution: Thermodynamic probability of such Frienbed defects is
N! N !
W
 N  n !n !  N   n !n !
change in entropy is
 N! N ! 
s  k ln w  k ln  . 
  N  n  !n !  N   n  n !
s  k ln  N ln N  N  ln N    N  n  ln  N  n    N   n  ln  N   n   2n ln n 
change in free energy in creating n Frenkel defects

G  n  T s

 G  n  T k ln  N ln N  N  ln N    N  n    N   n  ln  N   n   2n ln n  
  G 
since 0
n
  G   N  n  N   n 
    kT 0  0  ln  N  n   1  2 ln n  2     kT ln  0
n  n 2

since n  N , N   N  n  N and N   n  N 
2
 NN    NN  
   kT ln  2   0    kT ln   0
 n   n 
 NN    

 ln    n  NN  e 2kT
 n  2kT
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fiziks

r13  r23 r13  r23

The 3rd nearest atom (III) is at distance  2a0  1.414 a0

(B). The Bravais lattice for this array is a

Thus, correct option is (b)

( 1 amu  1.66 1024 g )

the lattice constant is a , the corresponding Bragg angle (in radian) is

If the lattice spacing is a  1 , the reciprocal lattice vectors are

N A  6.023 1026 atoms/kmol

B. The sine of the angle corresponding to (111) reflection is

peak appears at    b sin      200 (ii)

 d2  2sin   2   cos    2sin   2

Thus,  d  1.5 1010    180    1.5  1010  0.067     

these phonons with frequencies just below 0 is proportional to

(a) 0    (b) 0    (c) 0    (d) 0   

structure, where the Ba 2 ions are at the vertices of a unit

For 2 dimensional solid d  2

of the Fermi wavevector of the system, in the free electron approximation, is

time in copper  Cu  to the mean collision time in silver  Ag  is

(a) 0.44 (b) 1.50 (c) 0.33 (d) 0.66

Where, n is the electron concentration or density of free Fermi gas.

the nanowire depends on E as

frequency of the conduction band electrons in a magnetic field B , the value of  is

effective mass of the electron near the bottom of the band is

is 1/3, then the Fermi energy is

(a) Insulator, semiconductor and metal

The density of state is

Solution:  k   cos k x a  cos k y a  cos k z a , Effective mass m  

2mE  2  9.1 10 kg 1.875 1.6  10 J  

Let at T  T1 , H C T1  , T  T2 , H C T   H C T2 

First Critical field H c1  

change in free energy in creating n Frenkel defects

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