3.

4 CMOS Process Enhancements 123

(a) Diffusion Barrier Etch Stop (b) Via Dielectric (c ) Line Dielectric (d) Anti-Reflective Layer

(e) Dielectric Etch (f) Ta Barrier (g) Cu Seed (h) Cu Fill (electroplate)
and CMP
FIGURE 3.21 Copper dual damascene interconnect processing steps

A typical copper damascene process is shown in Figure 3.21, which is an adaptation

of a dual damascene process flow from Novellus. Figure 3.21(a) shows a barrier layer over
the prior metallization layer. This stops the copper from diffusing into the dielectric and
silicon. The via dielectric is then laid down (Figure 3.21(b)). A further barrier layer can
then be patterned, and the line dielectric is layered on top of the structure, as shown in
Figure 3.21(c). An anti-reflective layer (which helps in the photolithographic process) is
added to the top of the sandwich. The two dielectrics are then etched away where the lines
and vias are required. A barrier layer such as 10 nm thick Ta or TaN film is then deposited
to prevent the copper from diffusing into the dielectrics [Peng02]. As can be seen, a thin
layer of the barrier remains at the bottom of the via so the barrier must be conductive. A
copper seed layer is then coated over the barrier layer (Figure 3.21( g )). The resulting
structure is electroplated full of copper, and finally the structure is ground flat with CMP,
as shown in Figure 3.21(h).

3.4.2.2 Low-k Dielectrics SiO2 has a dielectric constant of k = 3.9–4.2. Low-k dielectrics
between wires are attractive because they decrease the wire capacitance [Brown03]. This
reduces wire delay, noise, and power consumption. Adding fluorine to the silicon dioxide
creates fluorosilicate glass (FSG or SiOF) with a dielectric constant of 3.6, widely used in
130 nm processes. Adding carbon to the oxide can reduce the dielectric constant to about
2.8–3; such SiCOH (also called carbon-doped oxide, CDO) is commonly used at the 90
and 65 nm generation. Alternatively, porous polymer-based dielectrics can deliver even
lower dielectric constants. For example, SiLK, from Dow Chemical, has k = 2.6 and may
scale to k = 1.6–2.2 by increasing the porosity. IBM has demonstrated air (or vacuum)