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CIRCUIT DIAGRAMS:
Fig. 01
Fig. 02
QUESTION ANSWERS:
(3.0082,510.108u)
400uA
(2.0082,240.026u)
200uA
(1.0000,69.892u)
0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
ID(M1)
VD(M1)
Fig.03
2. The value of threshold voltage that I input to the model is 1.8 volt.
3. The value of threshold voltage that I obtained from simulation is 1.823 volt.
At 4V,
At 5V,
1.0000 V 1.2 V
2.0082 V 2.2 V
3.0082 V 3.2 V
Comment: There is little bit difference between simulation and calculation values which
is avoidable.
8. Now,
2𝐼𝐷
gm=
(𝑉𝐺𝑆−𝑉𝑇)
At 3V,
2𝐼𝐷
gm= = (2×72×10-3)/(3-1.8) = 0.12 mA/V.
(𝑉𝐺𝑆−𝑉𝑇)
At 4V,
2𝐼𝐷
gm= = (2×242×10-3)/(4-1.8) = 0.22 mA/V.
(𝑉𝐺𝑆−𝑉𝑇)
At 5V,
2𝐼𝐷
gm= = (2×512×10-3)/(5-1.8) = 0.32 mA/V.
(𝑉𝐺𝑆−𝑉𝑇)
Discussion: From This Experiment we have learned about the Parameters and I-
V characteristics measurement of an N-channel MOSFET. Since this a crucial
situation for everyone ,so that we are performing this experiments via online
platforms. To do this experiments :
--- We need to be carefull while performing in the pspise window.
--- We have to take all the readings carefully.
--- We need to be carefull about the calculations.