Mul

ti
pleChoi
ceQuest
ions
_
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BE(
2015)
Pat
ter
n

404190Br
oadbandCommuni
cat
ion
Syst
ems)

Topi
c:Fi
breOpt
icCommuni
cat
ion
UNI
TIILi
ghtwav
eSy
stems

5.Quest
ions&Answer
sonOpt
ical
Sour
ces:
TheLaserandLi
ght–Emi
tt
ingDi
ode

Thesectioncontainsquesti
onsonopticalsourcesbasi
cs,semiconduct
orinj
ect
ion
l
aser
,inject
ionlaserstr
ucturesandcharacter
isti
cs,
nonsemi conduct
orlaser
s,t
unabl
e
andi
nfraredlasers,l
edpower ,l
edst
ructuresandcharact
erist
ics.

ThissetofOpti
calCommunicat
ionsMult
ipl
eChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Opti
calSour
ces:LaserBasi
cs”
.
1.Adev icewhichconver
tsel
ect
ri
cal
ener
gyi
nthef
orm ofacur
renti
ntoopt
ical
ener
gy
i
scalledas_ _
____
___
__
a)Opticalsource
b)Opticalcoupler
c)Opticalisol
ator
d)Cir
culator
ViewAnswer

Answer:a
Expl
anati
on:
AnOpt i
calsourcei
sanact i
vecomponenti nanopti
calf
iber
communicat
ionsy
stem.Itconvertsel
ectr
ical
energyi
ntooptical
energyandal
l
owst
he
l
ightout
putt
obeeffici
entl
ycoupledint
otheOpticalf
iber.

2.Howmanytypesofsour
cesofopt
ical
li
ghtar
eav
ail
abl
e?
a)One
b)Two
c)Three
d)Four
ViewAnswer

Answer:
c
Expl
anat
ion:
Threemai
nty
pesofopti
call
ightsourcesareav
ailabl
e.Thesear
ewi
deband
sour
ces,monochr
omat
ici
ncoher
entsour
ces.Ideall
ytheopt
icalsour
ceshoul
dbel
inear
.

3.Thefrequencyoftheabsorbedoremi
tt
edradi
ati
onisr
elat
edtodif
fer
encei
nenergyE
betweenthehigherenergyst
ateE2andt
helowerener
gystat
eE1.St
atewhathst
ands
fori
nthegivenequation?

E=E2-E1=hf

a)Gravit
ati
onconstant
b)Planck’
sconstant
c)Permitti
vi
ty
d)Attenuati
onconstant
ViewAnswer

Answer :
b
Expl
anation:Inthegi
venequat
ion,
diff
erencei
ntheenergyEisdir
ectl
yproport
ionalt
o
theabsor bedfr
equency(
f)wherehisusedasaconstantandiscall
edasPlanck’s
constant.Thevalueofhi
smeasuredinJoules/
sec&isgivenby-
h=6.626×10-34Js.

4.Theradi
ati
onemi
ssi
onpr
ocess(
emi
ssi
onofapr
otonatf
requency
)canoccuri
n
___
_____
__ways.
a)Two
b)Three
c)Four
d)One
ViewAnswer

Answer :a
Explanati
on:Theemi ssi
onpr ocesscanoccurintwoway s.Fi
rsti
sbyspontaneous
emissioninwhichtheat om ret
ur nst
othelowerenergystat
einarandom manner.
Secondi sbysti
mulatedemi ssionwheretheenergyofaphotonisequaltotheener
gy
di
fferenceanditint
eractswitht heat
om i
nt heupperstat
ecausingi
ttoretur
ntothe
l
owerst ateal
ongwi t
ht hecreationofanewphot on.

5.Whichprocessgivesthel
aseri
tsspeci
alpr
oper
ti
esasanopt
ical
sour
ce?
a)Disper
sion
b)Stimul
atedabsorpti
on
c)Spontaneousemission
d)Stimul
atedemission
ViewAnswer

Answer :d
Expl
anat i
on:I
nStimul at
edemi ssion,t
hephot onproducedisoft hesameener
gytothe
onewhi chcauseit.Hence,theli
ghtassoci at
edwi t
hstimulatedphotoni
sinphaseand
hassamepol ari
zation.Theref
ore, i
ncontrasttospontaneousemi ssi
on,
coher
ent
radi
ati
oni sobt
ained.Thecoher entradiat
ionphenomenoni nlaserpr
ovi
des
amplif
icati
ontherebymaki nglaserabet t
eroptical
sourcethanLED.

6.Anincandescentlampi soper
ati
ngatatemper
atur
eof1000Katanoper
ati
ng
fr
equencyof5. 2×1014Hz.Cal
cul
atether
ati
oofst
imulat
edemissi
onr
ateto
spontaneousemi ssi
onrate.
a)3×10-13
b)1.47×10-11
c)2×10-12
d)1.5×10-13
ViewAnswer

Answer:
b
Expl
anat
ion:Therati
oofthest
imulatedemi
ssi
onr
atetot
hespont
aneousemi
ssi
onr
ate
i
sgivenby-
Sti
mulat
edemi ssi
onrat
e/Spontaneousemi
ssi
onrat
e=1/exp(
hf/
KT)-1.

7.Thel owerener gylevelcont

ainsmor
eat
omst
hanupperl
evel
undert
hecondi
ti
onsof
______
_ ____
_ _
__ _
a)Isothermal packaging
b)Popul ati
oni nver
sion
c)Ther mal equil
ibr
ium
d)Pumpi ng
ViewAnswer
Answer :c
Explanati
on:Undertheconditi
onsofthermal equi
li
brium,thelowerenergylev elcont
ains
mor eatomsthant heupperlevel
.Toachieveopt i
calamplifi
cation,
iti
srequiredt o
createanon-equil
i
brium di
stri
buti
onsucht hatthepopulati
onofupperener gyl eveli
s
mor ethanthelowerenergylevel
.Thi
spr ocessofexci t
ati
onofat omsintotheupper
l
ev eli
sachievedbyusinganext er
nalenergysourceandi scalledaspumpi ng.

8.______
_____
__ _
_ ___inthel
aseroccur
swhenphot
oncol
l
idi
ngwi
thanexci
tedat
om
causesthestimul atedemissi
onofasecondphot
on.
a)Lightamplif
ication
b)Attenuat
ion
c)Dispersi
on
d)Populati
oninv ersion
ViewAnswer

Answer :a
Explanati
on:Laseremitscoherentr
adiat
ionofoneormor ediscretewavelength.Laser
s
producecoherentli
ghtthroughaprocesscall
edstimul
atedemi ssion.Li
ght
ampl i
fi
cati
onisobtainedthroughst
imulatedemissi
on.Cont
inuat i
onofthisprocess
createsaval
anchemul ti
pli
cati
on.

9.Ar ubyl
aserhasacry
stal
ofl
engt
h3cm witharefr
act
ivei
ndexof1.
60,
wav
elengt
h
0.43μm.Determinet
henumberofl
ongi
tudi
nalmodes.
a)1×102
b)3×106
c)2.9×105
d)2.2×105
ViewAnswer

Answer:d
Expl
anati
on:Thenumberofl ongi
tudi
nal
modesi
sgi
venby
-
q=2nL/λ
Where
q=Numberofl ongi
tudinalmodes
n=Refracti
veindex
L=Lengthofthecr yst
al
λ=Peakemi ssionwav elengt
h.

10.Asemi conduct
orlasercr
yst
aloflengt
h5cm, r
efr
acti
vei
ndex1.8i
susedasan
opti
calsource.Det
erminethefr
equencysepar
ati
onofthemodes.
a)2.8GHz
b)1.2GHz
c)1.6GHz
d)2GHz
ViewAnswer
Answer :c
Expl
anat i
on:Themodesofl aserar
esepar
atedbyaf
requencyi
nter
nal
δfandt
his
separati
onisgiv enby-
δf=c/ 2nL
Where
c=v eloci
tyoflight
n=Ref racti
veindex
L=Lengt hofthecr yst
al.

11.Dopplerbr
oadeni
ngi
sahomogeneousbr
oadeni
ngmechani
sm.
a)True
b)False
ViewAnswer

Answer :
b
Explanat
ion: Dopplerbroadeningi
sai nhomogeneousbr oadeningmechani sm.Int
his
broadening,theindivi
dualgroupsofatomshav edif
ferentappar entresonance
fr
equenci es.Atomiccolli
sionsusuall
yprovi
dehomogeneousbr oadeningaseachatom
i
ncol l
ectionhassamer esonantfrequencyandspectr
al spread.

12.Aninject
ionl
aserhasacti
vecav
it ossesof25cm-1andt
yl her
eflect
ivi
tyofeach
l
aserfacetis30%.Deter
minethel
asergai
ncoeff
ici
entfort
hecavi
tyithasalengthof
500μm.
a)46cm-1
b)51cm-1
c)50cm-1
07cm-1
d)49.
ViewAnswer

Answer :d
Explanati
on: Thelasergai
ncoef
fi
cienti
sequi
val
entt
othet
hreshol
dgai
nperuni
tlengt
h
andi sgivenby–
gth=α+1/ Lln(1/r)
Wher e
α=act ivecav i
tyl
oss
L=Lengt hoft hecav i
ty
r=ref l
ectiv
ity.

13.Longit
udi
nal
modescont
ri
but
eonl
yasi
ngl
espotofl
i
ghtt
othel
aserout
put
.
a)True
b)False
ViewAnswer

Answer :
a
Explanat
ion:Laseremi
ssi
oni
ncl
udesthel
ongit
udi
nalmodesandtransversemodes.
Transversemodesgiveri
set
oapatt
ernofspot
sattheout
put.Longi
tudinalmodesgi
ve
onl
yaspotofl
i
ghtt
otheout
put
.

14.Consider ingt
heval
uesgi
venbelow,cal
cul
atet
hemodesepar
ati
oninter
msoff
ree
spacewav elengt
hforal
aser
.(Fr
equencysepar
ati
on=2GHz,
Wavelengt
h=0.5μm)
a)1.4×10-11
b)1.6×10-12
c)1×10-12
d)6×10-11
ViewAnswer

Answer: b
Expl
anat i
on:Themodesepar
ati
oni
nter
msoff
reespacewav
elengt
hisgi
venby
-
2
δλ=λ/ cδf
Where
δf=frequencyseparat
ion
λ=wav el
ength
c=velocityofli
ght

Thi
ssetofOpt i
calCommuni
cat
ionst
estf
ocuseson“
Opt
ical
Emi
ssi
onFr
om
Semiconduct
ors”.

1.Aper fectsemiconductorcr
yst
alcont
aini
ngnoi
mpur
it
iesorl
att
icedef
ect
siscal
l
ed
as_ _
___ _
____
a)Intr
insicsemiconductor
b)Extri
nsicsemi conduct
or
c)Excitati
on
d)Valenceel ect
ron
ViewAnswer

Answer:
a
Expl
anat
ion:Anint
ri
nsicsemiconductori
susual
l
yun-doped.Iti
sapur
esemiconductor
.
Thenumberofchargecarri
ersisdetermi
nedbythesemiconduct
ormat
eri
alpr
operti
es
andnotbytheimpuri
ti
es.

2.Theenergy-
lev eloccupati
onforasemi
conduct
ori
nther
mal
equi
l
ibr
ium i
sdescr
ibed
bythe_____
_____
a)Bolt
zmanndi st r
ibuti
onfuncti
on
b)Probabi
li
tydist r
ibuti
onfuncti
on
c)Fermi-
Dir
acdi stribut
ionfunct
ion
d)Cumulati
vedi stri
butionf
unction
ViewAnswer

Answer:c
Expl
anati
on:Forasemi conduct
ori
nt her
malequil
i
br i
um, theprobabi
li
tyP(E)thatan
el
ectrongai
nssuffi
cientther
malenergyatanabsolutetemperaturesoast ooccupya
part
icul
arener
gylevelE,isgi
venbytheFermi-
Dir
acdi st
ributi
on.Iti
sgivenby-
P(
E)=1/
(1+exp(E-
EF/
KT)
)
Wher
eK=Bol t
zmannconst
ant
,T=absol
utet
emper
atur
e,EF=Fer
miener
gyl
evel
.

3.Whati sdonetocreateanext
ri
nsicsemiconduct
or?
a)Refracti
veindexisdecr
eased
b)Dopi ngthemateri
alwit
himpuri
ti
es
c)Increasetheband-gapoft
hemat er
ial
d)Stimulatedemission
ViewAnswer

Answer:b
Expl
anati
on:Ani ntr
insi
csemiconduct
orisapuresemiconductor.Anextr
insi
c
semiconductori
sobt ai
nedbydopingthemateri
alwit
himpurit
yat oms.Theseimpur
it
y
atomscreateeitherfr
eeelect
ronsorhol
es.Thus,ext
ri
nsi
csemi conduct
orisadoped
semiconductor.

4.Themaj or
it
yoft
hecar
ri
ersi
nap-
typesemi
conduct
orar
e__
___
___
__
a)Holes
b)Elect
rons
c)Photons
d)Neutrons
ViewAnswer

Answer :
a
Explanat
ion:Theimpuri
ti
escanbeeit
herdonorimpur i
ti
esoracceptorimpur i
ti
es.When
acceptorimpuri
ti
esareadded,t
heexci
tedelectr
onsarer ai
sedf r
om thevalencebandt
o
theacceptorimpuri
tyl
evel
sleavi
ngposit
ivechargecarr
iersintheval
enceband.Thus,p
-ty
pesemi conduct
orisfor
medinwhichmaj or
it
yofthecar ri
ersareposit
ivei.
e.hol
es.

5._______
______
____i
susedwhent
heopt
ical
emi
ssi
onr
esul
tsf
rom t
heappl
i
cat
ionof
el
ectricfi
eld.
a)Radiati
on
b)Effi
ciency
c)Electr
o-l
uminescence
d)Magnet ronosci
ll
ator
ViewAnswer

Answer:c
Expl
anation:
Electr
o-l
umi nescenceisencouragedbyselecti
nganappropr
iat
e
semiconductormateri
al.Directband-
gapsemi conduct
orsareusedfort
hispurpose.I
n
band-t
o-bandrecombination,theener
gyisreleasedwit
ht hecr
eati
onofphoton.This
emissi
onofl i
ghtisknownasel ect
rol
uminescence.

6.I
nthegi
venequat
ion,
whatdoespst
andsf
or?

p=2πhk
a)Permitt
ivi
ty
b)Probabil
i
ty
c)Holes
d)Cryst
almoment
um
ViewAnswer

Answer:
d
Expl
anat
ion:Thegi
venequat
ionisarel
ati
onofcr
ystal
momentum andwavevect
or.I
n
thegi
venequati
on,
histhePlanck’
sconst
ant
,kisthewav
evectorandpi
sthecryst
al
momentum.

7.Therecombi
nat
ioni
nindi
rectband-
gapsemi
conduct
orsi
ssl
ow.
a)True
b)False
ViewAnswer

Answer :a
Explanation:I
nanindi r
ectband- gapsemiconductor,
themaximum andmi nimum
ener gi
esoccuratdifferentvaluesofcryst
al momentum.Howev er
,thr
ee-parti
cle
recombi nati
onprocessi sfarlessprobabl
et hanthetwo-
part
icl
eprocessexhibitedby
directband-gapsemi conductors.Hence,therecombinat
ioni
nanindirectband-gap
semi conductori
srelativel
yslow.

8.Cal culat ether adioacti

vemi nori
tycarri
erl
if
eti
meingalli
um arseni
dewhent he
mi norit
ycar r
ier
sar eelectronsinj
ectedintoap-t
ypesemiconductorr
egionwhichhasa
18 -
3
holeconcent rationof10 cm .Ther ecombi
nati
oncoeff
ici
entforgall
ium ar
seni
deis
7.21* 10-10cm3s-1.
a)2ns
b)1. 39ns
c)1.56ns
d)2. 12ms
ViewAnswer

Answer :b
Explanati
on:Theradi
oact
iveminor
it
ycarr
ierlif
eti
meςr
consi der
ingt
hep-typeregi
onis
giv
enby -
-
1
ςr=[BrN] wher
eBr=Recombinati
oncoeffi
ci ncm3s-1andN=car
enti r
ierconcent
rat
ion
i
nn- regi
on.

9.Whichimpuri
tyi
saddedt
ogal
l
ium phosphi
det
omakei
tanef
fi
cientl
i
ghtemi
tt
er?
a)Sil
i
con
b)Hydrogen
c)Nit
rogen
d)Phosphorus
ViewAnswer
Answer:c
Expl
anation:Ani
ndir
ectband- gapsemi conductormaybemadei ntoanelectr
o-
l
uminescentmateri
albyt headdi t
ionofi mpuri
tycent
erswhichwi l
lconverti
tint
oa
di
rectband-gapmateri
al.Thei ntr
oductionofnitr
ogenasani mpurit
yintogall
ium
phosphi
demakesi tanef fect
iveemi tt
erofli
ght.Suchconversi
onisonlyachievedi
n
materi
alswherethedir
ectandi ndir
ectband-gapshaveasmal lenergydif
fer
ence.

10.Popul
ati
oninver
sionisobtainedatap-
njunct
ionby_
___
___
___
a)Heavydopingofp-t
ypemat eri
al
b)Heavydopingofn-t
ypemat eri
al
c)Li
ghtdopi
ngofp- t
ypemat eri
al
d)Heavydopingofbothp-t
ypeandn- ty
pemateri
al
ViewAnswer

Answer:d
Expl
anation:
Popul
ati
oni nver
sionatp-njuncti
onisobtai
nedbyheav ydopingofbothp-
ty
peandn- ty
pemateri
al.Heavyp-ty
pedopi ngwithacceptorimpur
iti
escausesa
l
oweringoftheFer
mi-l
ev el
betweent hefi
ll
edandempt yst at
esint
othevalenceband.
Simi
larl
yn-ty
pedopi
ngcausesFer mi-lev
el t
oentertheconducti
onbandoft hemateri
al.

11.AGaAsinj
ect
ionl
aserhasathreshol
dcur
rentdensit
yof2.5*103Acm-2andlengt
h
andwidthoft
hecavi
tyi
s240μm and110μm r
espectiv
ely.Fi
ndthet hr
esholdcurr
entfor
thedevi
ce.
a)663mA
b)660mA
c)664mA
d)712mA
ViewAnswer

Answer :
b
Expl
anation:Thethreshol
dcur renti
sdenot
edbyI
h.
t I
tisgi
venby
-
I
th=Jth* ar
ea oftheopti
ca l
c avi
ty
WhereJth=t hr
esholdcurrentdensity
Areaofthecav i
ty=lengthandwi dt
h.

12.AGaAsi nj
ect
ionl
aserwi
thanopti
calcav
ityhasref
ract
ivei
ndexof3.6.Cal
cul
atet
he
refl
ect
ivi
tyf
ornormali
nci
denceoft
heplanewav eontheGaAs-ai
rint
erf
ace.
a)0.61
b)0.12
c)0.32
d)0.48
ViewAnswer

Answer:c
Expl
anati
on:Ther
efl
ect
ivi
tyf
ornor
mal
inci
denceoft
hepl
anewav
eont
heGaAs-
air
i
nter
faceisgiv
enby-
 2
r=(
(n-
1)/
(n+1)
) wher
er=r
efl
ect
ivi
tyandn=r
efr
act
ivei
ndex.

13.Ahomo- j
unct
ioni
saninter
facebetweent
woadj oi
ningsi
ngl
e-cr
yst
al
semiconduct
orswit
hdif
fer
entband-gapener
gies.
a)True
b)False
ViewAnswer

Answer :b
Explanation:Thephot o-
emissiveproperti
esofasi ngl
ep-njunct
ionfabri
catedf r
om a
singl
e-crystalsemiconductormat eri
alar
ecalledashomo- j
uncti
on.Ahet er
o-juncti
onis
aninterfacebet weentwosi ngl
e-cryst
alsemiconductorswit
hdiffer
entband-gap
energies.Thedev iceswhicharef abri
cat
edwi thheter
o-j
uncti
onsaresaidtohav eheter
o
-str
ucture.

14.Howmanyty
pesofhet
ero-
junct
ionsar
eav
ail
abl
e?
a)Two
b)One
c)Three
d)Four
ViewAnswer

Answer :a
Explanati
on:Hetero-
junct
ionsarecl
assi
fi
edintoanisotypeandan-
isot
ype.Theisotype
hetero-
junct
ionsarealsocall
edasn-norp-pjunct
ion.Thean-i
sot
ypehetero-
junct
ions
arecall
edasp- njuncti
onwi t
hlar
geband-gapener
gies.

15.The____
____
____
__syst
em isbestdevel
opedandi
susedf
orf
abr
icat
ingbot
hlaser
s
andLEDsfortheshort
erwavel
engthregi
on.
a)InP
b)GaSb
c)GaAs/GaSb
d)GaAs/Al
gaASDH
ViewAnswer

Answer :d
Explanati
on:ForDHdevi
cefabricati
on,materi
alssuchasGaAs,AlgaASareused.The
band-gapinthismat
eri
almaybet ai
lor
edtospant heent
ir
ewav el
engthbandby
changingtheAlGacomposit
ion.Thus,GaAs/Al gaAsDHsy st
em isusedforf
abri
cati
on
oflasersandLEDsforshor
terwav el
engthregi
on( 0.
8μm-0.
9μm) .

ThissetofOpti
calCommunicati
onsMulti
pleChoiceQuest
ions&Answer
s(MCQs)
focuseson“TheSemiconduct
orInj
ect
ionLaser”
.

1.St
imul
atedemissi
onbyrecombinat
ionofi
nject
edcar
ri
ersi
sencour
agedi
n__
___
___
__
a)Semi
conduct
orinj
ect
ionlaser
b)Gaslaser
c)Chemistl
aser
d)Dyelaser
ViewAnswer

Answer :a
Explanati
on: St
imulat
edemi ssi
onbyuseofopticalcavi
tyi
ncr y
stal
str
uctur
eisusedi
n
semi conductori
nject
iondi
odes.Thispr
ovidest
hef eedbackofprot
onswhichgi
ves
i
njectionlasermanyimportantadv
antagesoverothersourcesli
keLED’
s.

2.Insemi
conduct
ori
nject
ionl
aser
,nar
rowl
i
nebandwi
dthi
soft
heor
der
?
a)1nm orl
ess
b)4nm
c)5nm
d)3nm
ViewAnswer

Answer:
a
Expl
anat
ion:Anarr
owlinebandwidthoforder1nm orl
essisused.Thi
snar
row
bandwi
dthisusef
ulinmini
mizingtheeff
ectsofmateri
aldi
sper
sion.

3.Inj
ectionlaserhav
eahi
ght
hreshol
dcur
rentdensi
tyof_
___
___
___
a)104Acm-2andmor e
b)102Acm-2
c)10-2Acm-2
d)10-3Acm-2
ViewAnswer

Answer:a
Expl
anati
on:Inj
ecti
onlaserhaveahight hr
eshol
dcurr
entdensityof104Acm-2duetolack
ofmatterandin-
eff
ici
entli
ghtsources.Thesehi
ghcurrentdensit
iesar
elargelyut
il
ized
i
npulsemodei nordertominimizejuncti
onandthusavertdamage.

4.ηTisknownassl
opequant
um ef
fi
ciency
.
a)True
b)False
ViewAnswer

Answer :
b
Explanat
ion:ηDisknownasslopequantum eff
iciency
.Itgivesameasurerateofopti
cal
outputpowerchangewi t
hcurrentandthusi
tdeter mi
nessl opeofout
putcharact
eri
sti
cs
i
nt heregion.So,ηTi
sref
err
edt oasslopequantum effi
ciency.

5.Thetotal
eff
ici
encyofani
nject
ionl
aserwit
hGaAsacti
veregi
onis12%.Theappl
i
ed
vol
tageis3.6VandbandgapenergyforGaAsis2.
34eV.Deter
mineext
ernal
power
eff
ici
ency.
a)7.8%
b)10%
c)12%
d)6%
ViewAnswer

Answer:a
Expl
anati
on:Thet
otalex
ter
nal
poweref
fi
ciencyi
sdef
inedas
η=ηT(Eq/V)
*100
=0.12(2.
34/3.
6)*100
=7.8%.

6.InaDHl aser,thesi
desofcavityaref
ormedby_
___
___
___
___
__
a)Cutt
ingtheedgesofdev ice
b)Rougheningt heedgesofdevice
c)Soft
eningt heedgesofdevice
d)Coveri
ngt hesideswithcer
ami cs
ViewAnswer

Answer:b
Expl
anati
on:I
naDHl aser
,thesidesofcavi
tyar
efor
medbytherougheningedgesoft
he
devi
ce.Thi
sisdonesoastor educetheunwant
edemissi
oni
nthesedirect
ionsandl
imit
thenumberofhori
zont
altr
ansversalmodes.

7.Aparti
cul
arl
aserst
ruct
urei
sdesi
gnedsot
hatt
heact
iver
egi
onext
endst
heedgesof
devi
ces.
a)True
b)False
ViewAnswer

Answer :
a
Explanation:
Laserstr
uctur
esarepart
icularlydesignedsot hattheacti
veregiondoes
notext endbeyondtheedges.Thi
sisdonet oreducepr oblemsl ikedi
ffi
cul
theatsinking,
l
asingf rom mult
ipl
efi
lamentinwideacti
v eareas, unsuit
abl eli
ghtoutputgeometryfor
eff
icientcoupli
ngandalsotoreducerequiredthresholdcur rent.

8.Gai
ngui dedlaserstr
uct
urear
e__
___
___
__
a)Chemical l
aser
b)Gaslaser
c)DHinjecti
onlaser
d)Quantum welllaser
ViewAnswer

Answer:c
Expl
anati
on:DHinject
ionl
aser
sareknownasgai
nguidedl
aserst
ruct
ure.Thi
sis
becausetheopt
icalmodedist
ri
but
ional
ongt
hejunct
ionpl
aneisdeci
dedbyopti
cal
gai
n.
9.Lasermodesar egeneral
l
ysepar
atedbyf
ew_
___
___
___
a)Tenthsofmi cromet er
b)Tenthsofnanomet er
c)TenthsofPico-met er
d)Tenthsofmi ll
i
met er
ViewAnswer

Answer :
b
Explanat
ion: Thespaci
nginbet
weenmodesi
saboutafewt
ent
hsofnanometer
.The
spacingoft hemodesdependsonopt
ical
cav
ityl
engt
hwher
eeachonecor
respondst
o
anintegralnumberoflengt
hs.

10.Thespect r
alwidthofemissionf r
om t hesingl
emodedev
icei
s__
___
___
__
a)Smallerthanbroadenedtransit
ionline-widt
h
b)Largerthanbroadenedtransit
ionline-width
c)Equalthebroadenedtransit
ionline-width
d)Cannotbedet ermined
ViewAnswer

Answer :a
Explanati
on:Si
ngl
emodedev i
cehasasmal lerspect
ral
wi dthascompar edtot
hatof
broadeningtr
ansi
ti
onli
ne-
width.Thisi
sbecauseforasingle-modeoperati
on,t
helaser
opti
cal out
putmusthaveonl
yasi ngl
elongi
tudi
nalandsingletr
ansver
semode.

11.Singlelongit
udinalmodeoper at
ioni
sobt
ainedby_
___
___
___
a)Eli
mi natingal
ltransver
semode
b)Eliminatingal
llongit
udinal
modes
c)Increasingthelengthofcavit
y
d)Reduci ngthelengthofcavit
y
ViewAnswer

Answer :d
Explanati
on:Singlelongi
tudi
nalmodeoperat
ionisobt
ainedbyr educingt helengt
hLof
cavi
ty.Lengthmustber educedunt
ilt
hefr
equencyseparat
ionofadj acentmodesi s
giv
eni ntheequat i
on
δf=c/ 2nLislargerthangaincur
ve.Thenonl
ysingl
emodef al
l
ingint ransit
ionli
newidt
h
wil
loscill
atei
nl asercavit
y.

12.AcorrectDHst
ruct
urewi
l
lrest
ri
ctt
hev
ert
ical
widt
hofwav
egui
der
egi
oni
s?
a)0.5μm.
b)0.69μm
c)0.65μm
d)Lessthan0.4μm
ViewAnswer

Answer
:d
Explanat
ion:
Thev ert
icalwi
dthDHstr
uct
ureshouldbelessthan0.4μm.Thi
sall
owsonly
fundamentaltr
ansversemodeandremovesanyinter
fer
enceofhigheror
dertr
ansv
erse
modesonemi t
tedlongit
udi
nalwav
es.

13.Theexter
nalpoweref
fi
ciencyofaninj
ecti
onlaserwithaGaAsi
s13%hav
ingband
gapenergyof1.
64eV.Deter
mi neexter
nalpowereffi
ciency
.
a)0.198
b)0.283
c)0.366
d)0.467
ViewAnswer

Answer:a
Expl
anati
on:Theexter
nal
poweref
fi
ciencyofani
nject
ionl
aseri
sgi
venby
ηep=ηT(Eq/
V)*100
ηT=ηep/
100(v/Eg)
=13/100(2.
5/1.64)
=0.198

ThissetofOpti
cal
CommunicationsMul
ti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“SomeInj
ect
ionLaserStr
uct
ures”
.

1.Inmul t
imodeinj
ectionlasers,theconst
ructi
onofcur
rentf
lowt
othest
ri
pisobt
ained
i
nst r
uctureby_______
_ _
_
a)Cover i
ngthestr
ipwi t
hcer amic
b)Int
rinsi
cdoping
c)Implantati
onoutsi
dest ri
pr egi
onwithprotons
d)Impl
ant at
ionout
sidestripregionwithel
ectrons
ViewAnswer

Answer :c
Explanati
on:Thecurr
entfl
owisreali
zedbyimpl ant
ingt
heregi
onoutsi
destr
ipwit
h
protons.Thi
simplant
ati
onmakest helaserhi
ghlyresi
sti
veandgi
vessuper
iort
hermal
properti
esduetoabsenceofsi
li
condi oxi
delayer.

2.Whatisthest
ri
pwi
dthofi
nject
ionl
aser
?
a)12μm
b)11.5μm
c)Lessthan10μm
d)15μm
ViewAnswer

Answer:c
Expl
anati
on:Astr
ipwidt
hlessthanorequalt
o10μm isusuall
ypref
err
edini
nject
ion
l
asers.Thi
swidt
hrangeprovi
desthelaser
shighl
yef
fi
cientcoupl
i
ngintomul
ti
mode
fi
ber
sascomapr edt
osinglemodefibers.
3.Somer ef
ract
ivei
ndexv
ari
ati
oni
sint
roducedi
ntol
ater
alst
ruct
ureofl
aser
.
a)True
b)False
ViewAnswer

Answer :a
Explanati
on:Gainguidedlaser spossesssev eralundesi r
ablecharacteri
sti
cs,
nonlinear
it
iesinl
ightoutputv ersuscurrentcharacterist
ics,highthr
esholdcurrent
,low
di
fferenti
alquantum effi
ciency,mov ementofopt icala;ongjuncti
onpl ane.Thi
s
problemscanber educedbyi ntroduci
ngr ef
racti
vei ndexv ar
iati
onsintolater
alstr
uctur
e
oflaserssothatopt i
calmodei sdet er
mi nedalongt hejunctionplane.

4.Buriedhet er
o-j
unct i
on( BH)devi
cei
sat ypeof___
_____
___
__laserwheret
heact
ive
volumei sbur i
edinamat eri
alofwi
derband-gapandlowerr
efr
activ
eindex.
a)Gasl asers.
b)Gaingui dedlasers.
c)Weaki ndexgui dinglasers.
d)Strongindexgui dinglasers.
ViewAnswer

Answer :d
Explanati
on:Instrongindexguidi
nglasers,
auni for
ml ythi
ck,pl
anaracti
vewav egui
dei
s
achievedbylateralvar
iati
onsinconfi
nementl ay
ert hi
cknessorrefr
acti
veindex.In
Buriedheter
o-juncti
on( BH)devi
ces,st
rongindexgui dingal
ongjuncti
onplane
i
ntroducestransversemodecont rol
ininj
ectionlasers.

5.InBuriedhet ero-j
unct
ion(BH)l
asers,
theopt
ical
fiel
disconf
inedwi
thi
n__
___
___
__
a)Transv ersedirecti
on
b)Lateral di
recti
on
c)Outsidet hestrip
d)Botht r
ansv erseandlater
aldi
rect
ion
ViewAnswer

Answer :
d
Explanat
ion:Opti
calf
ieldi
sstr
onglyconf
inedinbot
ht r
ansv
erseandl
ateral
dir
ecti
on.
Thisprovidesst
rongindexgui
dingofopt
icalmodealongwit
hgoodcarri
erconf
inement
.

6.Adouble-
channel
planarbur
iedhet
ero-
str
uct
ure(
DCPBH)hasapl
anaract
iver
egi
on,
theconfi
nementmateri
ali
s?
a)AlgaAS
b)InGaAsP
c)GaAs
d)SiO2
ViewAnswer

Answer
:b
Explanati
on:Theplanaract
iveregi
onmadeupofI nGaAsPcanbeseenindouble-
channelplanarbur
iedheter
o-str
uctur
e( DCPBH).Thismater
ial
confi
nementprovi
desa
veryhighpoweroperati
onwi t
hCW out putpowerupto40mW inlongerwavel
ength
regi
on.

7.Probl
emsresulti
ngf r
om parasi
ticcapaci
tancescanbeov
ercome_
___
___
___
a)Throughr
egrowthofsemi -i
nsulati
ngmat er
ial
b)Byusingoxi
demat er
ial
c)ByusingaplanarInGaAsPact i
veregion
d)ByusingaAlGaAsact iv
eregion
ViewAnswer

Answer :a
Explanation:
Theuseofr ever
se-biasedcur
rentconf
inementl
ayer
si ntroducesparasit
ic
capacitanceswhi chreduceshighspeedmodul at
ionofBHlaser
s.Thi sproblem canbe
reducedbyr egrowthofsemi -
insulati
ngmateri
alordeposi
ti
onofdielectri
cmat eri
al.
Thiscausesi ncreaseinmodulationspeedsof20GHz.

8.Quant um welll
asersar
eal
soknownas_
___
___
___
a)BHl asers
b)DHl asers
c)Chemi callaser
s
d)Gain-guidedlaser
s
ViewAnswer

Answer:b
Expl
anation:DHl aser
sareknownasQuant um welll
asers.Thecarri
ermotionnormalto
acti
velayerisrestr
ict
edinthesedevices.Thi
sresult
sinquantizati
onofkineti
cenergy
i
ntodiscreteenergylevel
sforcarr
ier
smov i
nginthatdi
recti
on.Thisphenomenoni s
si
milartoquant um mechanical
probl
em ofonedi mensionalpotent
ialwel
lwhichisseen
i
nDHl asers.

9.Quantum welllaser
sareprov
idi
nghi
ghi
nher
entadv
ant
ageov
er_
___
___
___
a)Chemicallasers
b)Gaslasers
c)Conventi
onal DHdev i
ces
d)BHdev i
ce
ViewAnswer

Answer:c
Expl
anation:Quant um welllasersexhibithighincoher
entadv antageoverconventi
onal
DHlasers.InQuant um welllaserstructures,thethi
nactivelayerresul
tsindrast
ic
changesinel ect
ronicandopt icalproperti
esov erconventi
onal DHlaserstr
uctur
es.Thi
s
changesareduet oquantizednat ureofdiscreteenergylevelswithstep-
li
kedensit
yand
al
soallowhi ghgainandl owcar r
ierdensity.
10.Stri
pgeomet
ryofadev
iceorl
aseri
simpor
tant
.
a)True
b)False
ViewAnswer

Answer:a
Expl
anati
on:Nearflui
dintensit
ydistr
ibut
ioncorr
espondi
ngtosingleopti
calout
put
powerlev
elinplaneofjunctioncanbeseeninGaAsorAl GaAslasers.Thi
sdist
ri
but
ion
i
sinlat
eraldi
recti
onandi sdeterminedbythenatureofl
ater
alwav egui
de.Thesi
ngl
e
i
ntensi
tymaximum showst hefundamentall
ater
almodeisdomi nant.

11.Betterconf
inementofoptical
modei
sobt
ainedi
n__
___
___
__
a)MultiQuantum well
lasers
b)SingleQuantum well
lasers
c)Gainguidedlaser
s
d)BHl asers
ViewAnswer

Answer :
a
Expl
anation:Ascompar edtoall
lasersincl
udingsi
ngl
equantum well
laser
s,mult
i-
Quantum wel l
laser
sarehav i
ngbetterconf
inementofopt
icalmode.Thisr
esul
tsina
l
owert hreshol
dcurrentdensi
tyfort
hesedev i
ces.

12.Mul ti
-quant
um dev i
ceshav
esuper
iorchar
act
eri
sti
csov
er_
___
___
___
a)BHl asers
b)DHl asers
c)Gaingui dedlasers
d)Single-quant
um- well
devi
ces
ViewAnswer

Answer:b
Expl
anati
on:Lowerthreshol
dcur rents,
nar r
owerbandwi dt
hs,hi
ghmodulati
onspeeds,
l
owerfrequencychir
psandl esstemper aturedependenceareparamet
ersdeter
mini
ng
char
acteri
sti
csofapar t
icul
arlaser.Allt
heabov eparametersmakemulti
-quant
um
devi
cessuperiorov
erDHl asers.

13.Dot-
in-
welldeviceisal
soknownas_
___
___
___
a)DHlasers
b)BHlasers
c)QDlasers
d)Gainguidedlasers
ViewAnswer

Answer:
c
Expl
anat
ion:Quant
um wel
llasersar
edevicesi
nwhichdev
icecont
ainsasingl
ediscrete
atomi
cstruct
ureorQuant
um- dot
.Theseareel
ementst
hatcont
ainelect
ronti
nydroplet
s
whi
chf
ormsaquant
um wel
lst
ruct
ure.

14.ABHcanhav
eany
thi
ngf
rom asi
ngl
eel
ect
ront
osev
eral
elect
rons.
a)True
b)False
ViewAnswer

Answer:b
Expl
anation:Quantum-dotl
asersar
efabr
icat
edusingsemiconduct
orcr
ystal
li
ne
materi
als.Theyhav eapart
icul
ardi
mensi
onrangingfr
om nm tofewmicr
ons.Thesize,
shapeoft hesest
ructur
esandnumberofelectr
onstheycontai
narepr
ecisel
ycont
roll
ed.

15.QDlaser
shaveav
eryl
owt
hreshol
dcur
rentdensi
ti
esofr
ange_
___
___
___
a)0. o5Acm-2
5t
b)2to10Acm-2
c)10to30Acm-2
d)6to20Acm-2
ViewAnswer

Answer :
d
Explanat
ion:Low-thresholdcurr
entdensitybetween6t o20Acm-2i sobtai
nedwi t
h
InAs/I
nGaAsQDl aserswhi chemitatawav elengthof1.3μm and1.5μm Suchl ow
valuesofthreshol
dcur rentdensi
ti
esmaket heselaserspossibl
etocreat
estackedor
cascadedQDst r
uctures.Thesestructur
espr ovi
dehighopticalgai
nforshor
t-cavi
ty
transmit
tersandv er
ticalcavi
tysurface-
emitti
nglasers.

ThissetofOpt
ical
Communi cat
ionsMulti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson”Si
ngleFr
equencyInject
ionLaser
s”.

1._____
__ _
_ _
_______
_maybei mprovedthroughtheuseoffr
equency
-sel
ect
ivef
eedback
sothatthecav it
ylossisdi
ff
erentforvar
iouslongi
tudi
nal
modes.
a)Frequencysel ect
ivi
ty
b)Longitudinalmodeselect
ivi
ty
c)Elect
ricalfeedback
d)Dissi
pat edpower
ViewAnswer

Answer :
b
Explanat
ion:I
mpr ov edlongit
udi
nalmodeselecti
vitycanbeachi
evedusingst
ruct
ures
whichgiveslossdi scri
minati
onbetweenthedesiredandallt
heunwantedmodes.Thus,
modedi scri
mi nat
ioncanbeseen.Toal l
owf orstablemodeoperati
on,
theuseof
fr
equency -
selecti
vef eedbackappr
oachisundertaken.

2.Devi
cewhi chapplyt
hefrequency
-sel
ecti
vefeedbacktechni
quet
opr
ovi
desi
ngl
e
l
ongit
udinaloperat
ionarer
eferr
edtoas_ _
____
_ _
______
__
a)DSM laser
s
b)Nd: YAGl asers
c)Glassfiberlasers
d)QDl asers
ViewAnswer

Answer:a
Expl
anation:DSM lasersarealsoknownassinglef
requencylaser
s.Suchdevi
ces
provi
desinglelongit
udinal
modeoper ati
onhencecall
edasdy namicsingl
emodelaser
s.
Theselasersreducefiberi
ntra-modaldi
sper
sionwit
hinhighspeedsystems.

3.Whichofthef ol
lowi
ngdoesnotpr
ovi
desi
ngl
efr
equencyoper
ati
on?
a)Shortcavi
tyresonat
or
b)DSM lasers
c)Coupledcavit
yresonat
or
d)Fabry-
Perotresonat
or
ViewAnswer

Answer :d
Explanati
on:DSM l
asers,shortcav
ityresonators,
coupledcav
ityresonatorsempl
oy
frequencysel
ect
ivefeedbackapproachandpr ovi
desingl
emodeoper at
ion.However
,
theFabry-Per
otr
esonatorallowssev er
allongit
udinal
modest oexistwit
hinthegai
n
spectrum oft
hedevice.

4.Amet hodf orincreasingthelongi

tudi
nal
modedi
scr
imi
nat
ionofani
nject
ionl
aser
whichiscommonl yused?
a)Decreasingr ef
ractiv
ei ndex
b)Incr
easingt herefracti
v ei
ndex
c)Incr
easingcav it
ylengt h
d)Shorteni
ngofcav it
ylength
ViewAnswer

Answer :d
Explanati
on:Thelongitudi
nalmodedi scr
iminati
onofani nject
ionl
aserisindi
rect
ly
proporti
onaltot
hecav i
tyl
ength.Thus,asthecavitylengt
hi sshor
tened,t
hemode
di
scr i
minati
onwil
l getincr
ease.Ift
hecav i
tylengthisreducedfrom 250to25units,t
he
modespaci ngisi
ncr easedfr
om 1t o10nm.

5.Convent
ional
cleavedmirr
orstr
uct
uresar
edi
ff
icul
ttof
abr
icat
ewi
tht
hecav
ity
l
engthsbel
ow_ _____
____
a)200μm andgreaterthan150μm
b)100μm andgreaterthan50μm
c)50μm
d)150μm
ViewAnswer

Answer
:c
Expl
anati
on:cl
eavedlasermirr
orsareusedinFabr y-
Perotr esonat
orwhichdoesnot
gi
veresul
tforshort
ercavityl
engths.Theselengt
hsmayv ar yfr
om 20μm to50μm.
Hencemicro-
cleav
edoret chedresonatori
susedf orshortercavit
ylens.

6.Inthegi venequat i
on,cor
rugati
onper
iodi
sgi
venbyl
λb/
2Ne.I
fλbi
stheBr
agg
wav elength,thenwhatdoes‘l’st
andfor
?
a)Lengt hofcav i
ty
b)Limi tat
ionindex
c)Integeror derofgrati
ng
d)Ref ract
ivei ndex
ViewAnswer

7.Thefir
stor
dergr
ati
ng(
l=1)pr
ovi
det
hest
rongestcoupl
i
ngwi
thi
nthedev
ice.
a)True
b)False
ViewAnswer

Answer :
a
Explanat
ion:Theperi
odofcorrugat
ionisgivenbylλb/
2Nei
ncl
udesorderofgrat
ing.The
secondgr at
ingpr
ovidel
argerspati
alperi
odandthushelpsi
nfabr
icati
on.I
ftheorderof
grat
ingis1,thenthedev
iceiscoupledathighlev
el.

8.Thesemiconductorlaser
semploy
ingthedi
str
ibut
edf
eedbackmechani
sm ar
e
cl
assifi
edi
n_ _
_____
_ _
__ _
____
_cat
egori
es.
a)One
b)Two
c)Three
d)Four
ViewAnswer

Answer :b
Explanati
on:Consider i
ngthedev i
ceoperation,semiconductorl
aser
sar eclassi
fi
edint
o
twobr oadcategoriesreferredt
oasdi str
ibutedfeedbacklaseranddistr
ibut
edBragg
ref
lectorl
aser.IntheDFBl aser
,opti
calgrati
ngi sappl
iedovertheentir
eactiver
egion,
wher easi
nDBRl asers,thegrat
ingisetchedonl ynearthecavit
yends.

9.DBF-
BHlaser
sexhi
bitl
owt
hreshol
dcur
rent
sint
her
angeof_
___
___
___
___
___
a)40to50mA
b)21to30mA
c)2to5mA
d)10to20mA
ViewAnswer

Answer:d
Expl
anati
on:DFBl
aser
sareusedtoprovi
desingl
efr
equencysemi
conduct
oropti
cal
sour
ces.DFB-BHl
aser
s,dev
elopedi
nlaborat
ori
esexhi
bithi
ghmodul
ati
onspeeds,
out
putpowerbutl
owt
hreshol
dcur
rent
sint
her
angeof10t
o20mA.

10.Fabry-
Per
otdev
iceswi
thBHgeomet
ri
eshi
ghmodul
ati
onspeedst
hanDFB-
BH
l
asers.
a)True
b)False
ViewAnswer

Answer:b
Expl
anati
on:DFB-BHlasersexhi
bitlowt hreshol
dcur r
entsbuthighoutputpowerand
modulati
onspeeds.DFB-BHlaserisf abri
catedbyetchingorgrati
ng.Fabry
-per
ot
devi
cesprovi
demodul at
ionspeedsofM- bitspersecondswhereas,DFB-BHlaser
s
prov
idesmodulati
onspeedsofG- bi
t s/sec.

11.TheInGaAsP/ I
nPdoublechannel
planarDFB-
BHl aserwi
thaquar
terwav
elengt
h
shif
tedf
irstor dergrat
ingpr
ovi
desasinglefr
equencyoperat
ionandi
ncor
por
atesa
phaseshiftof_ ___
______
___
_
a)π/2Radi ans
b)2πRadi ans
c)πRadians
d)3π/2radi ans
ViewAnswer

Answer:a
Expl
anation:
TheperformanceofDFBl aseri
simprov
edbymodi f
yingagrat
ing,whichin
tur
nint
roducesanopt i
calphaseshift
.Thephaseshi
ftdependsont hewavelengt
hused.
Aquarterwavel
engthshif
tedfir
stordergrat
ingi
ncor
poratesthephaseshif
tofπ/2i n
thecor
rugati
onatthecenteroflasercavi
ty.

12.Thenarr
owl i
ne-
widt
hobtai
nedundert
heCW oper
ati
onf
orquar
terwav
elengt
h
shif
tedDFBlaseri
s____
___
____
___
__
a)2MHz
b)10MHz
c)3MHz
d)1MHz
ViewAnswer

Answer :c
Explanati
on:Aquarterwavel
engthshi
ft
edDFBlaserprovi
desalargegai
ndiff
erence
betweent hecent
ralmodeandsi demodes.I
tpr
ovidesimproveddynamicsi
nglemode
stabil
i
ty.Narr
owline-wi
dthofaround3MHzcanbeobt ainedunderCW oper
ati
on.

13.Li
ne-widt
hnarrowi
ngi
sachi
evedi
nDFBl
aser
sbyast
rat
egyr
efer
redas
___
_______
____
_
a)Noisepart
it
ion
b)Grati
ng
c)Tuning
d)Braggwav
elengt
hdet
uni
ng
ViewAnswer

Answer :
d
Explanat
ion:Li
ne-
widthnarr
owingisachi
evedinDFBlasersbydetuningthelasi
ng
wav el
engthtowar
dstheshorterwavel
engt
hsideofgainpeak.I
tincreasesthe
dif
ferent
ialgai
nbetweenthecentr
almodeandnearestsidemode.Thi sstr
ategyis
call
edasBr aggwavel
engthdetuni
ng.

14._______
_____ _
_ _
__i
sat echni
queusedt
orendert
henon-
conduct
ingmat
eri
alar
ound
theactiv
ecav i
t ybyproducingper
manentdef
ectsi
nthei
mplant
edarea.
a)Dispersi
on
b)Ionde-plantation
c)Ionimplantation
d)Attenuati
on
ViewAnswer

Answer :c
Explanati
on:Ioni
mplantat
ionapproachconcentr
atestheinj
ecti
oncurrentinact
ive
region.Curr
entconf
inementisreali
zedbyionimplant
ati
on.Ionsareimplantedi
ntoa
selecti
veareaofasemiconductingmater
ialtomakeitnon-conduct
ing.

ThissetofOpti
calCommuni cat
ionsMult
ipl
eChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“I
nject
ionLaserCharact
eri
sti
cs”
.

1.Thethreshol
dtemper
atur
ecoef
fi
cientf
orI
nGaAsPdev
icesi
sint
her
angeof
____
______
a)10-40K
b)40-75K
c)120-190K
d)150-190K
ViewAnswer

Answer :b
Explanati
on:Thethresholdtemper aturecoeff
ici
entforInGaAsPdev i
cesisinbetween
40and75K.Thi srangeshowshi ghert emperaturesensit
ivi
tyduetointri
nsi
cphysical
properti
esofInGaAsPmat eri
alsystem, Augerrecombinati
on,int
er-
valenceband
absorpti
on,carr
ierleakageeffect
sov erhet
ero-j
uncti
ons.

2.Theprocesswher etheener
gyreleasedduri
ngt
herecombinat
ionofanel
ect
ron-
hol
e
eventgett
ingtransferr
edtoanothercarri
eri
sknownas____
______
a)Int
er-v
alencebondabsor pti
on
b)Augerrecombi nati
on
c)Carri
erleakageef f
ects
d)Exothermicactions
Vi
ewAnswer

Answer :
b
Explanation: Augerr ecombi nati
oni saprocesswher eenergyisrel
eased.Thi senergyis
releaseddur ingt herecombi nationofelectron-hol
eandthi
sr el
easedener gyis
transferredtoanot herel ectron-
holeevent.Dur i
ngthi
sprocess,whenacar ri
erisexci
ted
toahi gherener gylevel,
itlosesi t
sexcessiveamountofener gybyemi tti
ngaphononi n
ordert omai ntainther malequi l
i
brium.I
tconsi stsofnumberofdi f
fer
entpr ocesseseach
processi nvolvingthr eeparticl
es( 2el
ectronsand1or2hol esand1el ectr
on) .

3.Augerrecombi
nationcanber educedbyusi
ng_
___
___
___
a)Str
ainedMQW structur
e
b)Str
ainedSQW str
ucture
c)Gain-
guidedst
rai
nedst r
ucture
d)Str
ainedQuantum dotslaser
s
ViewAnswer

Answer :a
Explanati
on:Augerr ecombinati
oni saprocesswher eener
gyisrel
easeddur ing
recombinati
onofel ectron-
holeeventistransferr
edt oanot
herevent.Thisloss
mechani sm canber educedbyusi ngstr
ainedbyusi ngMCQl aserstruct
ure.Strai
ncan
beeithercompr essi
v eortensi
le,
modi fy
ingt hevalencebandenergylevelsofmat er
ial
andt her
eforecanbeusedt oincreaseenergy .

4.Highstr
aini
nst
rai
nedMCQst
ruct
ureshoul
dbei
ncor
por
ated.
a)True
b)False
ViewAnswer

Answer :b
Explanation:Strai
nisintroducedinthinlayer
sofquantum well
sbymaki ngsmall
di
fferencesi nlatt
iceconstants.Highstrai
nshouldbeav oi
dedbecauseitcauses
damagei ntheset hi
n-quantum layer
s.Alsocarr
ierl
eakageaddsathightemperatur
es
si
ncei trepresentsprocessest hatpreventcar
ri
erfr
om recombinat
ionthusreduci
ng
deviceeffici
ency .

5.Thepar amet erthatpr

eventscar
ri
erf
rom r
ecombi
nat
ioni
s__
___
___
__
a)Augerr ecombi nati
on
b)Int
er-
v alencebandabsor pti
on
c)Carri
erleakage
d)Lowt emper aturesensi
ti
v i
ty
ViewAnswer

Answer:c
Expl
anation:
Carr
ierleakagei
sthepar
ametert
hatprevent
scarri
ers(
elect
rons,hol
es)
fr
om recombinat
ion.Athight
emperat
ures,
car
ri
erleakagerepr
esent
sallthose
processespr
eventi
ngcarri
ersf
rom r
ecombinati
on.I
tther
efor
eincr
easest
hel
asi
ng
threshol
dandthusreducesdevi
ceeff
ici
ency.

6.Deter
minet
het
hreshol
dcur
rentdensi
tyf
oranAl
GaAsi
nject
ionl
aserwi
thT0=180kat
30°C.
a)6.24
b)9.06
c)3.08
d)5.09
ViewAnswer

Answer :
d
Explanat
ion:Thet hr
eshol
dcurr
entdensi
tyf
oral
aseri
sgi
venby
-
I
th=e xp(
T/T0)
ForAlGaAsdev ice,
I
th(
30)=exp(T/T0)=exp(293/
180)=5.09.

7.Thephenomenonoccur r
ingwhent heel
ect
ronandphot
onpopul
ati
onwi
thi
nthe
structur
ecomesi ntoequi
li
bri
um isknownas_ _
___
___
__
a)Augerr ecombinati
on
b)Inter-
valencebandabsorpt
ion
c)Car ri
erl
eakage
d)Relaxationosci
ll
ati
ons
ViewAnswer

Answer :
d
Explanat
ion:Phenomenonoccur
ri
ngwhentheel
ect
ronandphotonpopul
ati
onwit
hinthe
str
ucturecomesi nt
oequi
li
bri
um i
sknownasRel
axati
onosci
ll
ati
ons.Theappl
i
cati
onof
acur r
entstat
etodev i
cer
esul
ti
nginaswi
tchdel
aywhichi
sfoll
owedbyhighfr
equency
dampedosci l
lat
ions.

8.Whenacur rentpulser
eachesalaserhav
ingpar
asi
ti
ccapaci
tanceaf
tert
hei
nit
ial
delayti
me,thatpulsewil
l__
_____
___
a)Hav enoeffect
b)Wi l
lgetv
anished
c)Becomesnar rower
d)Getsbroader
ViewAnswer

Answer :d
Explanation: Thepulsewillbebr
oadenedwheni twillreachalaserwithpar asi
ti
c
capacitanceaf t
erini
ti
alti
medelay .Thi
sisbecausewhenacur r
entpulser eachest he
l
aser ,
thepar asi
ticcapaci
tanceoflaserprovi
desasour ceofcurrentovertheperiod
whent her eishighphot ondensi
ty.Aselectr
ondensityisrepet
it
ivelybui
ltupand
reducedqui ckl
y,ther
ewi l
lbeseveralpul
sesatlaseroutputasphot ondensi t
ywillbe
highresultinginr el
axati
onoscil
l
ations.
9.Reducingdel ayt
imeand_ _
_ _
___
___
__ar
eofhi
ghi
mpor
tancef
orl
aser
s.
a)Augerr ecombinati
on
b)Int
er-valencebandabsorpt
ion
c)Carri
erleakageef f
ects
d)Relaxationoscil
l
ations
ViewAnswer

Answer :d
Explanati
on:Forlaser
sgenerall
yaswi tch-
ondelaytimemaylastf
or0.5nsand
rel
axationosci
ll
ationsbehi
ndt wicethatper
iod.Thi
sbehavi
orcanproduceser
ious
deteri
orati
oninshapeoflaserpul seatadatarateof100Mbi
ts.Soti
medelayand
Relaxati
onoscil
lati
onsarehighlydesir
ableforl
asers.

10.Dynami cli
ne-
widt hbroadeni
ngundert
hedi
rectmodul
ati
onofi
nject
ioncur
renti
s
knownas_ __
____
_ _
_
a)Augerrecombinat i
on
b)Int
er-v
alencebandabsor pt
ion
c)Carri
erleakageef f
ects
d)FrequencyChirping
ViewAnswer

Answer :
d
Explanat
ion: FrequencyChi r
pingisaphenomenonwhi chisduetoDy namicli
ne-width
broadeningunderdi rectmodul at
ionofasinglelongit
udinal
mode.Semi conductorlaser
causeady nami cshi
ftingofpeakwav el
engthemi tt
edf r
om devi
ce.Strongcoupli
ng
betweent hef r
eecar r
ierdensityandref
racti
veindexofdev i
cepresentinsemiconductor
struct
ureresultsingain-inducedvari
ati
onswhi chalsocausesFrequencyChirpi
ng.

11.Apar t
icul
archar acteri
sti
corpar
amet
ert
hatoccur
sdur
inganal
ogt
ransmi
ssi
onof
i
njecti
onlasersis?
a)Noise
b)Modehoppi ng
c)Carri
erleakageef fects
d)FrequencyChi r
ping
ViewAnswer

Answer:a
Expl
anation:Duringanalogtransmission,noisebehav
iorofdevi
ceismainthi
ngthat
aff
ectstheoper ati
onofinjecti
onlaser.Thisnoisemaybeduet oinst
abi
li
ti
esinki
nksin
l
ightoutputversuscurrentcharacter
isti
cs,refl
ect
ionofli
ghtbacktodev
iceandmode
part
it
ionnoise.

12.I
ntensi
tyofoutputf
rom semi
conduct
ori
nject
ionl
aser
sleadi
ngt
oopt
ical
int
ensi
ty
noi
seisduet o____
____
__
a)Fl
uctuat
ionsinamplit
ude
b)Modehoppi ng
c)Carri
erleakageeff
ect
s
d)FrequencyChirpi
ng
ViewAnswer

Answer :a
Explanati
on:Fl
uctuati
onsint helaseroutputori ntensi
tyofl
aseroutputleadst oopti
cal
i
ntensitynoi
se.Thesefluctuationsaregener al
lycausedbytemper atur
ev ari
ati
onsand
spontaneousemissioninthel aseroutput.Thisr andomnessinfl
uctuati
onscr eatesa
noisesourceknownasr elati
v eint
ensitynoise(RI N).

13.Inmul ti
model aserstheopti
calf
eedbackfr
om unnecessar
yext
ernal
ref
lect
ions
affect
ingst abi
li
tyoff requencyandi
ntensi
tyi
s?
a)Remai nsunaf fected
b)Increasedgr adual l
y
c)Reduced
d)Getst otall
yvani shed
ViewAnswer

Answer :
c
Explanat
ion:
Theef f
ectduetounwantedexter
nalr
efl
ect
ionsi
nmul t
imodel
aseris
reduced.Thi
sisbecausetheref
lect
ionsar
espreadal
onganyfibermodessotheyar
e
weaklycoupledbackint
olasermode.

14.Reduct
ioni
nthenumberofmodesi
nmul
ti
modef
iberi
ncr
easest
hemodepar
ti
ti
on
noise.
a)False
b)True
ViewAnswer

Answer :a
Explanati
on:Modepart
it
ionnoisei
sar esul
toflaserspectr
alf
luct
uati
onsandsoa
reduceinnumberofmodesr esul
tsinlowpulse-
widthspreadi
ngthusprov
idi
nglow
valuesofint
ermodaldi
spersi
oninthefiber
.Andso, t
hemodepar t
iti
onnoi
seis
decreasedinmult
imodefiberduetoreduci
ngthenumberofmodes.

15.Thebehaviorofl
aseroccur
ri
ngwhencur
renti
sincr
easedabov
ethr
eshol
d
part
icul
arl
yis?
a)Modehoppi ng
b)Augerrecombinat
ion
c)Frequencychi
rpi
ng
d)Noise
ViewAnswer

Answer :
a
Explanat
ion:
Modehoppingresul
tsint
hehoppingofmodestoahigherwavel
ength.
Thismodehoppingoccursi
nalli
nject
ionl
aser
sandisduetoincr
easeintemperatur
e.
Modehoppi
ngi
snotaconti
nuousfunct
ionofdri
vecurr
entbutoccur
sabove1to2mA.
Modehoppi
ngal
ter
schar
acter
ist
icsofl
aserandresul
tsinki
nksinchar
act
eri
sti
csof
si
ngl
emodedevi
ce

ThissetofOpti
cal
Communi
cati
onsMulti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Non–Semi
conduct
orLaser
s”.

1.___
________
____
___
__l
aser
sar
epr
esent
lyt
hemaj
orl
asersour
cef
oropt
ical
fiber
communi cati
ons.
a)Semiconductor
b)Non-Semiconduct
or
c)Inj
ecti
on
d)Soli
d-stat
e
ViewAnswer

Answer:c
Expl
anation:I
njecti
onl asercoupli
ngusingdiscretelasershaveprovedtof r
uitf
ul.Such
l
ensesprov i
def orr
elaxationforanali
gnmentt olerancesnormall
yr equi
redforfiber
coupl
ing.Certai
nnon- semi conduct
orsourcesaremaki ngi
tslaceintheopticalfi
ber
communi cat
ion.Atslowl ypresent,
inj
ecti
onlasersar emost l
yusedasl asersources.

2.InNd:YAGl
aser
s,t
hemaxi
mum dopi
ngl
evel
sofneody
mium i
s__
___
___
___
_
a)0.5%
b)1.5%
c)1.8%
d)2%
ViewAnswer

Answer :b
Explanati
on:TheNd:YAGlaserstr
uct
ureisfor
medbydopi ngofyttr
ium-al
umi
num -
garnet(YAG)withneody
mi um.Theener
gylevel
sf orl
asingtr
ansit
ionandpumpi
ngare
providedbyneodymium i
ons.Themaximum dopinglevelofneodymium i
nYAGis
around1.5%.

3.Whichoft hefollowi
ngisnotapr oper
tyofNd:
YAGl
asert
hatenabl
esi
tsuseasan
opti
calfibercommuni cati
onsource?
a)Singl
emodeoper at
ion
b)Narrowl i
ne-width
c)Longl i
feti
me
d)Semi conductorsandintegr
atedcir
cui
ts
ViewAnswer

Answer :d
Explanation:
Nd: YAGlaserisanon-semiconductorl
aser.I
tdoesnotincl
udetheuseof
semi conductorsandthuscannottakeadvantageofwell
-devel
opedtechnol
ogy
associatedwi t
hintegr
atedcir
cui
ts.Singl
emodeoper ati
on,nar
rowli
ne-widt
h,li
fet
ime
ar
ethepr
oper
ti
est
hatar
eusef
ulf
oropt
ical
communi
cat
ion.

4.TheNd:YAGl
aserhasanar
rowl
i
ne-
widt
hwhi
chi
s__
___
___
___
___
__
a)<0.01nm
b)>0.01nm
c)>1mm
d)>1.6mm
ViewAnswer

Answer:a
Expl
anati
on: TheNd:YAGlaserhasseveralpr
opert
ieswhichmakeitanact
iveopt
ical
sour
ce.Oneofsuchpr opert
iesi
sitsnarr
owl i
ne-
width.I
tisl
essthan0.
01nm whichis
usef
ulforreducingdi
sper
sionofopti
call
inks.

5.Thestrongestpumpingbandsi
saf
ourl
evel
syst
em ofNd:
YAGl
aseratwav
elengt
h
ofrange____
__ _
___
___
____
a)0.25and0. 56nm
b)0.75and0. 81nm
c)0.12and0.23nm
d)1and2nm
ViewAnswer

Answer:b
Expl
anati
on: TheNd: YAGlaserisafourlevelsyst
em.Itconsi
stsofnumberofpumpi ng
bandsandf l
uorescenttr
ansit
ions.Thestrongestpumpingbandsarethewavelengths
of0.75μm and0.81μm.andgi veslasi
ngtransit
ionat1.064μm and1.
32μm.Single
modeemi ssionisusuall
yobtainedatthesewav el
engths.

6.TheNd:YAGl
aseri
scost
li
ert
hanear
th-
dopedgl
assf
iberl
aser
.
a)True
b)False
ViewAnswer

Answer:
a
Expl
anat
ion:Themosti mportantrequi
rementoftheNd:YAGlaserispumpingand
modulat
ion.Theset worequi
rementstendtogiv
eacostdisadvantageincompari
son
wit
hearth-
dopedgl assfi
berl
aser.Alsoiti
seasi
erandlessexpensivet
ofabri
cat
eglass
fi
beri
nearth-dopedlaser.

7.Iti
sar esonantcav i
tyfor
medbytwoparal
lel
ref
lect
ingmi
rr
orssepar
atedbyami
rr
or
separatedbyamedi um suchasai
rorgasi
s?
a)Opticalcavit
y
b)Wheat stone’
sbr i
dge
c)Oscill
ator
d)Fabry-perotresonat
or
ViewAnswer
Answer :d
Explanati
on:Resonantcav i
tyisformedbetweentwomirror
swherefi
bercoredoped
wit
hear thionsisplaced.Thiscavityi
s250-500μm l
ongand5t o15μm wide.AFabr
y-
perotresonatoroscil
lat
esatr esonantfr
equencyf
orwhichther
eishi
ghgain.

8.Inathreel
evelsy
stem,
thet
hreshol
dpowerdecr
easesi
nver
sel
ywi
tht
hel
engt
hoft
he
fi
bergainmedium.
a)True
b)False
ViewAnswer

Answer:b
Expl
anati
on:Iftheimperf
ecti
onlossesarelowt heninaf ourl
evelsyst
em thethreshol
d
powerdecreasesinver
selywiththelengt
hofthef i
bergainmedium.At hr
eel evel
consi
stsofanopt i
mum length.Thisopti
mum lengthgivestheminimum threshold
powerwhichisindependentofthev al
ueofimperfect
ionlosses.

9.Whichofthefol
lowingco-
dopanti
snotempl
oyedbyneody
mium ander
bium doped
si
licafi
berl
aser
s?
a)Phosphoruspentoxide
b)Germania
c)Nitr
ogen
d)Alumina
ViewAnswer

Answer:c
Expl
anati
on:
Sil
icabasedglassf
ibersareprovedt
obet hebesthostmat
eri
alt
il
ldat
e.
Thesesi
li
cafi
bersaredopedwit
hneody mium ander
bium.Thesedopantsi
ncl
udeco-
dopant
ssuchasphosphoruspent-oxi
de,germani
um andalumina.

10.Dopant
sl ev
elsi
nglassfiberlasersar
egener
all
y__
___
___
___
a)Low
b)High
c)Sameast hatofGRINrodlensl aser
d)Sameast hatofsemiconductorlaser
ViewAnswer

Answer :a
Explanati
on:Dopantl evelsarelowinglassfi
ber
s(nearl
y400partspermill
ion)
.Thisis
becauseofi ncreasi
ngi nconcentrat
ionquenchi
ngwhichincr
easeswiththedopinglevel
.
Itmaycauset hereductioninthepopulati
onoft
heupperlasi
nglevelaswellas
crystal
l
izat
ionwi thi
nt heglassmat r
ix.

11.__
____
_ _
____
___fi
ber
si ncl
udeaddi
ti
onofl
eadf
luor
idet
othecor
egl
assi
nor
dert
o
rai
setherel
ati
veref
ract
iveindex
.
a)Sol
id-
state
b)GaAs
c)Semiconduct
or
d)ZBLANP
ViewAnswer

Answer:
d
Expl
anat
ion:Up-
conv er
sionpumpi
ngoflasermat erialisusedtoconver
taninfrared
l
aseroutputt
oav i
si
bl el
aserout
put.ZBLANPi shostmat eri
alonwhi
chlaseract i
onat
al
lwavel
engthscanbeobt ai
nedbypumpi ng.Ther elat
iverefr
acti
vei
ndexisincreased
byaddi
ti
onofleadfluori
dewhichmakesitav eryinteresti
nghostmateri
al.

12.Thelasi
ngout
putoft
hebasi
cFabr
y-per
otcav
ityf
iberi
srest
ri
ctedt
obet
ween
____
___
_____
a)1and2nm
b)5and10nm
c)3and6nm
d)15and30nm
ViewAnswer

Answer:b
Expl
anati
on:thegai
nspectrum ofrareear
thionsmaybeseenov erawav el
engt
hrange
of50nm.Thel asi
ngoutputwil
lthusbenar r
owunlessthediel
ect
ri
cont hemirr
ori
s
arr
anged.Suchanarrowli
ne-wi
dt hisnotusedforabroadbandopti
cal
source.

13.InFabry-perotlaser,t
helowert hr
eshol
disobt
ainedby_
___
___
___
_
a)Incr
easingt herefracti
veindex
b)Decreasingt herefract
iveindex
c)Reducingt heslopeef f
ici
ency
d)Incr
easingt heslopeef fi
ciency
ViewAnswer

Answer :c
Explanati
on:ThefinesseofFabry-
perotcavit
yprovi
desameasur eofit
sfil
ter
ing
properti
es.Whenthef i
nesseishighthespli
tti
ngrati
oislowthusl oweri
ngthelaser
threshol
di nanopticalcav
itywi
thoutmirror
.InFabry
-per
otlaser
, mirr
orsarepresent
andt huslowerthr
eshol di
sobtai
nedbyr educingt
heslopeeffi
ciency.

14.Whendidt
henon-
semi
conduct
orl
aserdev
eloped?
a)1892
b)1946
c)1985
d)1993
ViewAnswer

Answer:
c
Expl
anat
ion:
Non-
semi
conduct
orsour
cesar
ecr
yst
all
i
neandgl
asswav
e-gui
ding
str
uct
ures.Theyar
edopedwithr
areear
thionsandaregoodopti
calsour
ces.The
devel
opmentofthesesour
cesst
art
edintheyear1985.Exampl
e:Nd:YAGlaser
.

15.Y3Al5O12isamol ecularfor
mul
afor_
___
___
___
___
a)Ytt
erbium aluminate
b)Yttr
ium oxide
c)Ytt
erbium oxy-al
umi nate
d)Yttr
ium-aluminum gar net
ViewAnswer

Answer :
d
Explanat
ion:Theatomi cnumberofYt
tri
um i
s39.I
tist
hebaseel
ementofYtt
rium-
al
umi num garnet
.Y3Al5O12,
dopedwit
hrareear
thi
onneody
mium tof
orm Nd:YAGlaser
str
ucture

Thi
ssetofOpt
ical
Communicati
onsQui
zfocuseson“
Nar
row–Li
newi
dthand
Wavel
engt
h–TunableLaser
s”.

1.Whichoft hesef act

orsar ecri
ticali
naff
ect
ingt
hesy
stem per
for
mancei
nthecaseof
coherentopticalfibertransmission?
a)Laserli
ne-wi dthandst abi
li
ty
b)Refract
ivei ndexandi ndexdif
ference
c)Corecladdingdi amet er
d)Frequency
ViewAnswer

Answer:a
Expl
anati
on: Thesystem employ
ingi
ntensi
tymodulati
ondoesnotconsi derli
ne-wi
dth
andstabi
li
tyast hefact
orsofutmostimport
ance.Incoherentopti
cal
sour ce
tr
ansmissi
on, l
aserli
ne-widt
handstabi
li
tyarecr
it
icalf
actors.Thesefactorsaf
fectt
he
syst
em performanceandar einther
angeof0.5-
1Megaher t
z.

2._______
_ ___
____occur
sasar
esul
toft
hechangei
nlasi
ngf
requencywi
thgai
n.
a)Frequencymul ti
pli
cati
on
b)Dispersion
c)Attenuation
d)Line-widthbroadeni
ng
ViewAnswer

Answer:d
Expl
anati
on:Li
ne-widt
hbroadeningisaf undament
alconsequenceofspont
aneous
emissi
onprocess.I
tisrel
atedtothefluctuat
ionsi
nthephaseoftheopti
calfi
elds.
Thesephasefl
uctuati
onsareduet othephasenoisesassoci
atedwit
hthespont aneous
emissi
onprocess.

3.Lasercav
ityl
engt
hcanbeext
endedby_
___
___
___
_
a)Increasingtherefracti
veindex
b)Reduci ngfrequency
c)Intr
oduct i
onofext ernalf
eedback
d)UsingGRI N-rodlenses
ViewAnswer

Answer :c
Explanati
on:t
helaser
shavinglongext
ernalcav
ityareref
erredt
oasLECl aser
s.The
extensionoft
helasercavi
tyl
engthbyint
roduct
ionofexternalf
eedbackcanbe
achievedbyusinganexter
nalcavi
tywi
thawav elengthdi
spersi
veelement.

4.Whati sthepur
poseofwav el
engt
hdi
sper
siv
eel
ementi
sLECl
aser
s?
a)Wav el
engthselect
ivit
y
b)Reduct i
onofli
ne-width
c)Frequencymultipl
i
cation
d)Av al
anchemultipl
icat
ion
ViewAnswer

Answer :
a
Explanat
ion:Awavelengthdispersiv
eelementi
sapar tofthel
asercavi
ty.I
tisr
equi
red
becausethelongresonatorstructur
ehasveryclosel
yspacedl
ongitudi
nalmodeswhich
necessit
atesaddi
ti
onal wavelengthsel
ecti
vi
ty.

5.Aneffect
ivemet
hodt
oreducet
hel
i
ne-
widt
hist
omaket
hecav
ityl
onger
.
a)True
b)False
ViewAnswer

Answer:a
Expl
anati
on: Asthel
aserpowerincreases,t
hedev i
celi
ne-
widthdecreases.Theout
put
powerflasercannotbemodear bit
rari
lyl
arge.Thus,t
heli
ne-
wi dt
hisreducedbymaking
thecav
itylonger
.Longercav
ityalsoenablesincr
easedwavelengthselect
ivi
ty.

6.Whi chdev icesareusedt

omodul
atet
heext
ernal
cav
ityi
nor
dert
oachi
evet
hehi
gher
swit
chi ngspeeds?
a)Electromagnet ic
b)Acoust o-
optic
c)Disper siv
e
d)Lead
ViewAnswer

Answer:b
Expl
anati
on:Thedevi
cesaretunedmechanicall
ytoextendthecavi
tyoflaser
.The
di
sadvant
ageofusingmechani cal
l
ytuneddevi
cesislow.Thus,el
ectr
o-opti
cdevices
areusedtomodulat
etheexternalcav
ityi
nordertoachiev
ehigherswit
chingspeeds.
7.Howmanytechni
quesar
eusedt
otunemonol
i
thi
cint
egr
ateddev
ices(
laser
s)?
a)Fiv
e
b)One
c)Two
d)Three
ViewAnswer

Answer:c
Expl
anati
on:Therearet wotechni
queswhichcanbeempl oy
edtotunemonolit
hic
i
ntegr
ateddevices.I
nt hefi
rstmethod,t
hemodeselecti
vi
tyofacoupledcav
itystr
uct
ure
i
sused.Othermet hodisusedt oarefr
acti
vei
ndexchangeinthedevi
cecavi
typrovi
ded
byappl
icat
ionofanel ectr
icfi
eld.

8.___
____
_ __
___
___
_lasercanbepr
oducedwhenacouplersect
ioni
sint
roduced
betweentheampli
fi
erandphasesect
ionsofast
ruct
ure.
a)SG-DBR
b)GCSR
c)Y4-shi
fted
d)DSM
ViewAnswer

Answer :b
Explanation:DBRlasersar
ecapableofwav el
engt
ht uni
ng.Grat
ingassi
stedco-
di
rectionalcouplerwit
hsampledrefl
ector(GCSR)
.Laseriscapableofatuni
ngr ange
greaterthan40nm.I tconsi
stsofaco-dir
ecti
onalcoupl
erbetweentheamplif
ierandthe
phasesect ion.

9.Therar
e-eart
h-dopedf
iberl
aser
shav
espect
ral
li
ne-
widt
hint
her
angeof
____
___
_______
___
a)0.1t
o1nm
b)1.2t
o1.5nm
c)6to10nm
d)2to2.3nm
ViewAnswer

Answer:a
Expl
anati
on:Ther
are-
ear
th-
dopedf
iberl
aser
shavespect
rall
ine-
widt
hintherangeof
0.1to1nm.Theseli
ne-
widt
hsaret
oolongforhi
ghspeedtr
ansmissi
onispossibl
ein
thi
srange.

10.Thelasi
ngli
ne-
widt
hofFox-
smi
thr
esonat
ori
s__
___
___
___
___
___
___
a)Lessthan1MHz
b)1MHz
c)2MHz
d)Great
erthan3MHz
ViewAnswer
Answer :
a
Explanat
ion:Fox-smit
hr esonat
orempl oysafusedcoupl
edfabri
cat
edf r
om erbium-
dopedf i
ber.Narr
owerspect ral
line-
widthcanbeobtai
nedusingaresonator
.Itprov
ides
favorabl
eli
ne-widthsthansemi conductorl
aser
.

11.Whatisthewi
destt
uni
ngr
angeobt
ainedi
nopt
ical
fiberl
aserst
ruct
ure?
a)60nm
b)80nm
c)Morethan100nm
d)100nm
ViewAnswer

Answer :c
Explanati
on:At
uningrangegreat
ert
han100nm byusi
nganerbium-
dopedphotoni
c
cry
st al
fiber
.Awidert
uningrangegr
eat
erthan100nm i
sobt
ainedatwavel
engt
h1.55
nm.

12.Howmanytechni
quescanbeusedt
oincr
easet
hei
nject
ioncav
ityl
engt
h?
a)One
b)Two
c)Three
d)Four
ViewAnswer

Answer :b
Explanati
on:Twotechniquescanbeusedt
oincr
easet
heinj
ect
ionlasercav
ityl
ength.
Thesear eusi
nglaserchipsandbyext
endi
ngacavi
tywi
thapassiv
emedi um suchas
ai
r,glassetc.

13.Themechani sm whi chresult

sfrom ar
efr
act
ivei
ndexchangei
nthepassi
ve
waveguidelayeriscall
edas_ _
_____
_ _
__
a)Absorpti
on
b)Spontaneousemi ssion
c)Monolit
hicinversion
d)Braggwav elengthcontrol
ViewAnswer

Answer:d
Expl
anati
on:Awi derwavel
engthtuni
ngl
engthisobt
ainedbysepar
ati
ngtheBr
agg
regi
oninthepassivewavegui
deandbyintr
oducingaphaseregi
onwithi
nawavegui
de
contr
olmechanism prov
idesphasecont
rol
.Itt
akesplacebysomechangesi
napassiv
e
wavegui
delayer.

14.Howmanysect
ionsar
eincl
udedi
nasampl
i
nggr
ati
ngdi
str
ibut
edBr
agg-
ref
lect
or
l
aser(SG-
DBR)
?
a)Four
b)Fiv
e
c)Three
d)Two
ViewAnswer

Answer:b
Expl
anati
on:InSG-DBRlaser,
fiv
esecti
onsar el
ongit
udi
nal
l
yintegrat
edtoget
herona
semiconduct
orsubstr
ate.Thesefi
vesecti
onsincl
udetwodif
fract
ionBr
agggrati
ng
sect
ions,again,
aphaseandanampl if
iersecti
on.

15.Fiberbasedl
aser
spr
ovi
dedi
ff
ract
ion-
li
mit
edpowerathi
gherl
evel
sthansol
i
d-st
ate
l
aser.
a)True
b)False
ViewAnswer

Answer:a
Expl
anation:I
nfiberlasers,theactivegainmedium isdopedwit
hrareeart
helements.
Theselasershaveact iv
er egionsseveralki
lometer
slongandthusprovi
dehighopti
cal
gai
n.Solid-
stat
el asers,ontheot herhand,prov
idediff
ract
ionl
i
mitedpoweratlower
l
evels

ThissetofOpt
icalCommuni
cati
onsMulti
pleChoiceQuest
ions&Answer
s(MCQs)
focuseson“Mi
dI nf
rar
edandFarI
nfr
aredLasers”
.

1.Theparamet er
shav i
ngamajorr
olei
ndeter
mini
ngt
hreshol
dcur
rentofef
fi
ciencyof
i
njecti
onlaserare_____
___
___
a)Anglerecombinati
onandopti
call
osses
b)Frequencychir
ping
c)Relaxat
ionoscil
lat
ion
d)Modehoppi ng
ViewAnswer

Answer :
a
Explanat
ion:Opt
icall
ossesduet ofr
eecar ri
erabsorpti
onaremor ebecauseoft hei
r
dependenceonsquar eoft hewav el
ength.Alsoir
radiat
iver
ecombi nati
onthroughAuger
recombinati
oncontri
butest oit
.Boththeseef f
ectscausemor eproblemsinmd- inf
rar
ed
wav el
engthsandsoar eofmuchi mportancearthightemperat
ureduet ohigh
concentrat
ionoffr
eecar r
iers.Theyalsolimitmaximum operati
ngt emper
atures.

2.Augercurrenti
smost
ly_____
___
___
___
___
__f
ormat
eri
alwi
thbandgappr
ovi
ding
l
ongerwav el
engthemi
ssion.
a)Unaffect
ed
b)Lesser
c)Larger
d)Vanishes
Vi
ewAnswer

Answer :c
Expl
anat i
on:Thetot
alcurrentrequi
redforinj
ecti
onl
aserthr
esholdismoret hanthat
provi
dedt oradi
oact
iverecombi nat
ionasAugercurr
entisadded.Thiscurr
entdepends
onelectroni
cbandstructureofmat er
ial
andof t
enconsi
stsofdif
ferentAuger
tr
ansit
ions.Soitisl
argerformat er
ial
swithbandgapsprovi
dinglongerwavelength
emission.

3.Inj
ect
ionl
aser
soper
ati
ngi
nsmal
l
erwav
elengt
hsar
esubj
ect
edt
oincr
easedcar
ri
er
l
osses.
a)True
b)False
ViewAnswer

Answer :b
Explanation:Injecti
onlasersoper atinginl
ongerwavelengt
hs( midandfari
nfr
ared)are
subjectedt oincreasedcarrierlossesascompar edtodev i
cesoperati
ngupto1.6μm.
Thisisf r
om nonr adi
ati
verecombi nati
onthr
oughAugeri nt
eracti
on.Thi
srecombinat
ion
energyisdi ssipatedasthermal energytootherf
reecarri
ers.I
fbandgapof
semi conductori sincr
eased, occur r
enceoftheseeventsgetsincr
eased.

4.Devicesbasedonquat
ernar
yPbSnSeTeandt
hei
rter
nar
ycompounds,
emi
tat
wavel
engt h?
a)Between3- 4μm
b)Longert han4μm
c)Between3. 5to4.
2μm
d)Between2t o3μm
ViewAnswer

Answer:b
Expl
anati
on:Quater
narydev
icesemitatwav
elengt
hlongerthan4μm.Augeref
fect
sar
e
l
essintheseall
oyswhichprovi
del
owercurr
entthr
esholdsandhighermaxi
mum
oper
ati
ngt emperat
ure.

5.Replaci
ngSnwi t
hEu,CdorGei
nsome_
___
___
___
___
___
_thebandgap.
a)Remov ethebandgap
b)Doesnotaf f
ect
c)Decreases
d)Incr
eases
ViewAnswer

Answer :d
Explanati
on:Wheninaparti
cularall
oyl aserf
orexampl
ePbSnSeTe,
ifSni
srepl
aced
withEu,CdorGe, t
hereisanincreaseinbandgap.Thisi
ncr
easeinbandgappr
ovides
thelasertooper
ateinshort
erwav elength.
.

6.Lasingobtai
nedin_ __
_______when191mW ofpumpl
i
ghtatawav
elengt
hof0.
477
μm islaunchedint
olaser.
a)TernaryPbSnSeTeal l
oylaser
b)Quat er
naryPbSnSeTeal l
oylaser
c)DopedFl uor
o-zi
rconatefi
ber
d)TernaryPbEuTeal l
oylaser
ViewAnswer

Answer:
c
Expl
anat
ion:WhenFluoro-
zir
conat
efiberlasersaredopedwit
hErbi
um hel
i
um or
thul
i
um,ther
ear eemissi
onat2-3μm wav elengt
hrange.Butl
asi
ngwasobtai
nedint
his
dopedFl
uorozi
rconat
ef i
beratawavelengthof0.477μm.

7.Thethul
i
um dopedfi
berlaserwhenpumpedwi
thal
exandr
it
elaserout
putat0.
786μm,
thel
aseremit
sat____
____
__ _
a)0.6μm
b)0.8μm
c)2.3μm
d)1.2μm
ViewAnswer

Answer :
c
Explanat
ion:Thethul
ium sy
stem emi
tsat2.
3μmwhensubjectedtoal
exandr
it
elaserat
0.786μm.t hi
ssystem i
sfourlev
elsi
nwhichthepumpbandisupperl
asingl
evelat
2.3μm.

8.Thediode-
claddi
ng-
pumpedEr
bium pr
aseody
mium-
dopedf
luor
idedev
iceoper
atesat
wavelengt
h.
a)Around3μm
b)4μm
c)2.6μm
d)1.04μm
ViewAnswer

Answer:a
Expl
anati
on:Thedi
ode-cl
addi
ng-pumpedErbi
um praseodymium- dopedf
luori
dedevi
ce
oper
atesatawavelengt
hof3μm.Thi sl
aseriscapabl
eofpr oducingaveryhighout
put
powerofabout1W ormore.I
tconsi
stsofdoublecl
adfluor
idefiber.

9.Atechniquebasedoni nt
er-
subbandt
ransi
ti
oni
sknownas_
___
___
___
_
a)Augerrecombination
b)Fr
equencychirping
c)I
nter-
valencebandabsorpti
on
d)Quantum cascading
Vi
ewAnswer

Answer:d
Expl
anati
on:Thequantum cascadedlaseri
salayer
edsemiconduct ordevi
cehavi
nga
seri
esofcoupl
edquant um wel
lsgrownonGaAsorI mpsubstrate.Thispri
nci
pleofQC
l
asersprovi
desemissionofanopticalsi
gnalar
oundful
lwavelengthrange.Quant
um
mechanical
bandstructur
edeterminestheemit
tedwavel
ength.

10.I
naQCl aser
,asameel
ect
roncanemi
tnumberofphot
ons.
a)True
b)False
ViewAnswer

Answer:
a
Expl
anat
ion:TheQCl aseroper
atesbypumpingaenergylevelandt henusingtheener
gy
i
nacontroll
edmanner .Thi
sgivessomeenergyeachti
meov erseveralst
eps.Andsince
aQClaserstructur
eincl
udesaseriesofener
gyl
evelsthesameel ectronemitsa
numberofphot onswhil
ecascadi
ngdownt hr
ougheachener gylev
el .

11.Thephenomenonr esul
tingint
heel
ectr
onstoj
umpf
rom onest
atet
oanot
hereach
ti
meemi tt
ingofphotonisknownas____
_____
__
a)Int
er-
val
encebandabsor pti
on
b)Modehoppi ng
c)Quantum cascadi
ng
d)Quantum confi
nement
ViewAnswer

Answer :
d
Expl anat
ion:I
nQuant um confinement,chargecarrier
saretr
appedinasmal lareaand
thisoccur si
nquant um wellsatnanomet erscal
e.Whent hequantum l
ayersizerai
sesto
asi zecompar abletoemissionwav el
engt h,
theelectronmoti
onbecomesper pendicul
ar
topl aneoflayer.Duetothis,t
heelectr
onsj umpfr om onest
atetoanothereacht i
me
from onest at
et oanother.

12.AQCl aserissometi
mesr ef
err
edas_
___
___
___
_
a)Unipol
arlaser
b)Bipol
arlaser
c)Gainguidedlaser
d)Nonsemi conductorl
aser
ViewAnswer

Answer:
a
Expl
anat
ion:AQCl aserut
il
izesonl
yn-
typeofchargecar
ri
ers.Thei
roper
ati
onisent
ir
ely
basedonelect
ronsandholesplaynoparti
nthi
s,sotheyar
eknownasuni pol
arl
asers.

13.I
nQCl
aser
s,i
tispossi
blet
oobt
aindi
ff
erentout
putsi
gnal
wav
elengt
hs.Thi
scanbe
achievedby_ ____
___
___
a)Inter-
valencebandabsor
pti
on
b)Modehoppi ng
c)Quant um cascadi
ng
d)Selectinglayer
sofdif
fer
entt
hickness
ViewAnswer

Answer :d
Explanati
on:I
nQCl aser
,el
ectr
onsemitenergy.Thi
senergyemi t
tedatthi
sst
age
determineswavel
engthofradi
ati
onanditdependsonlyonthicknessofthel
ayer
.Thus
outputsignal
wavelengt
hisdependentonthi
cknessoflaser
s.

14.QClaser
s_____
_____
____t
heper
for
mancechar
act
eri
sti
cs.
a)Havenegl
igi
bleeff
ects
b)Doesnotaff
ects
c)Impr
oves
d)Degr
ades
ViewAnswer

Answer :c
Explanation:QClasersarebasedonintersubbandt r
ansi
ti
ont echni
ques.Theyhave
abil
i
t yofcarryi
nglargeamountofcurrents.Asingl
eelect
ronisenought ogenerat
e
numberofphot ons.Thus,pr
ovidesanincreaseinout
putsignalpowerwhichisgreat
er
thant housandsatsamewav el
engthduetol ar
genumberofcascadedst ages.

15.AnMQW cascadedl aserismoreadv

ant
ageousbecauseof_
___
___
___
_
a)Modehoppi ng
b)Augerrecombinati
on
c)Control
ov erl
ayer
sofmat eri
al
d)Propert
iesofmateri
al
ViewAnswer

Answer :c
Explanati
on:InMQW cascadedl ayers,cascadingcr eatesnumberofinj
ector/coll
ector
andact i
veregioninsi nglestage.Eachr egioncont ainsasingl
equantum wells.Such
str
ucturespermi tmaxi mum injecti
on/collecti
onofcur r
entandther
ebyproduceal ar
ge
numberofphot ons.Thi sfor
mat i
onofanyi nject
or/ col
lect
orandacti
veregionsi s
achi
ev edthroughpr ecisecontrolofsev eralhundredsofl ayer
softhematerial,where
eachlayershoul donlybef ewnanomet erst hi
ck

ThissetofOpti
cal
Communicat
ionsMult
ipl
eChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“LEDPowerandEf
fi
ciency
”.

1.Theabsenceof_ __
__ _
____
___
__i
nLEDsl
i
mit
sthei
nter
nal
quant
um ef
fi
ciency
.
a)Propersemiconductor
b)Adequatepowersuppl y
c)Opt
ical
ampli
ficat
iont
hroughsti
mulat
edemissi
on
d)Opti
calampl
i
ficat
iont
hroughspont
aneousemissi
on
ViewAnswer

Answer :c
Explanati
on:Ther at
ioofgenerat
edelectr
onst otheelectr
onsinjectedisquantum
eff
iciency
.Itisgreat
lyaff
ectedift
hereisnoopt i
calampl i
fi
cat
iont hroughst
imulated
emission.Spontaneousemissionall
owsron- r
adi
ativ
er ecombinationinthestr
ucture
duet ocryst
all
ineimperf
ecti
onsandi mpurit
ies.

2.Theexcessdensit
yofel
ect
ronsΔnandhol
esΔpi
nanLEDi
s__
___
___
___
_
a)Equal
b)ΔpmorethanΔn
c)Δnmor ethanΔp
d)Doesnotaffect
stheLED
ViewAnswer

Answer :a
Explanati
on:Theexcessdensityofel
ectronsΔnandΔp(hol
es)isequal.Thecharge
neutral
it
yismai nt
ainedwit
hinthestr
uctureduetoinj
ect
edcarr
iersthatarecreatedand
recombinedinpairs.Thepowergenerat
edi nt
ernal
l
ybyanLEDi sdeterminedbyt aki
ng
i
ntoconsi der
ingtheexcesselect
ronsandholesinp-andn-
typematerialrespect
ivel
y.

3.Thehol econcentrat
ioni
next
ri
nsi
cmat
eri
alsi
s__
___
___
_el
ect
ronconcent
rat
ion.
a)muchgr eat
erthan
b)lesserthan
c)equal t
o
d)negligi
bledif
ferencewit
h
ViewAnswer

Answer :a
Explanati
on:Inext
ri
nsicmat er
ials,
onecarri
erty
pewi l
lbehighl
yconcentr
atedthant
he
othertype.Henceinp-typer
egion,holeconcent
rati
onisgreat
erthanel
ectr
on
concentrati
onincontextofext
rinsicmater
ial
.Thisexcessminor
itycar
ri
erdensit
y
decayswi t
ht i
me.

4.Thecarr
ierr
ecombi
nat
ionl
i
fet
imebecomesmaj
ori
tyori
nject
edcar
ri
erl
i
fet
ime.
a)True
b)False
ViewAnswer

Answer :b
Explanation:Theini
tialinj
ectedexcesselect
rondensit
yandτrepresent
sthetotal
car
ri
er
recombi nati
ontime.Inmostcases, Δnisasmallfr
acti
onofmajorit
ycarri
ersand
containsallminorit
ycar ri
ers.Soi
nt hesecases,
carri
errecombi
nationl
if
eti
mebecomes
minorityinj
ectedcarrierli
feti
meτi.
5.Inajunct i
ondi ode,anequil
ibr
ium condit
ionoccurswhen_
___
___
___
__
a)Δngreatert hanΔp
b)Δnsmal lerthanΔp
c)Constantcur rentfl
ow
d)Opti
cal ampl if
icati
onthroughsti
mul at
edemi ssi
on
ViewAnswer

Answer:c
Expl
anati
on:Thetotalrat
eatwhi chcarr
ier
saregenerat
edi
nsum ofext
ernal
lysuppli
ed
andther
mal gener
ationrates.Whenthereisaconst
antcur
rentf
lowi
nthiscase,an
equi
li
bri
um occursi
nj unct
iondiode.

6.Deter
minethetotal
car
ri
errecombi nati
onlif
eti
meofadoublehet
erojuncti
onLED
wheretheradi
oacti
veandnonradi
oact i
verecombinat
ionl
i
fet
imeofmi nori
tycar
ri
ersi
n
acti
veregi
onare70nsand100nsr espectiv
ely.
a)41.17ns
b)35ns
c)40ns
d)37.5ns
ViewAnswer

Answer :a
Explanati
on: Thetotalcar
ri
errecombinati
onli
fet
imei sgiv
enby
τ=τrτnr/τr+τnr=70×100/70+100ns=41. 17ns
Wher e
τr=radiativerecombinati
onli
feti
meofmi nori
tycarr
iers
τnr=nonr adioact
iverecombi
nationl
if
etimeofmi nor
itycarr
ier
s.

7.Deter
minethei
nter
nal
quantum ef
fi
ciencygenerat
edwithi
nadevi
cewhenithasa
radi
ati
verecombi
nati
onl
if
eti
meof80nsandt otal
carri
err
ecombi
nati
onl
if
eti
meof40
ns.
a)20%
b)80%
c)30%
d)40%
ViewAnswer

Answer :b
Explanation:Theinter
nalquantum ef
fi
ciencyofdev
icei
sgi
venby
ηint=τ/τr=40/ 80×100=80%
Wher e
τ=t otalcarri
errecombinati
onlif
eti
me
τr=r adi
ativerecombinati
onli
feti
me.

8.Computepoweri
nternal
l
ygenerat
edwi
thi
nadouble-
het
eroj
unct
ionLEDifi
thas
i
nter
nalquant
um ef
fi
ciencyof64.
5%anddri
vecur
rentof40mAwi thapeakemissi
on
wavelengt
hof0.
82μm.
a)0.09
b)0.039
c)0.04
d)0.06
ViewAnswer

Answer :b
Explanat i
on:Thepoweri nter
nall
ygener at
edwi thi
ndev i
cei.
e.double-
het
eroj
unct
ionLED
canbecomput edby
Pint=ηinthci/
eλ=0. 626×10-34×3×108×40×10-3/1.
645×6. 602×10-19×0.
82×10-6
=0. 039W
Wher e
ηint=internalquantum ef
fi
ciency
h=Pl anck’sconstant
c=v eloci
tyoflight
i=dr ivecurrent
e=el ectr
onchar ge
λ=wav el
ength.

9.TheLamber t
ianint
ensit
ydi
str
ibut
ion_
___
___
___t
heext
ernal
poweref
fi
ciencyby
someper cent
.
a)Reduces
b)Doesnotaf f
ects
c)Incr
eases
d)Haveanegl i
gibl
eeffect
ViewAnswer

Answer :a
Explanati
on:InLamberti
anintensitydistr
ibuti
on,t
hemaxi mum int
ensi tyI0is
perpendicul
artotheplanarsurfacebuti sreducedonthesidesinpr oportiont othe
cosineofθi .
e.vi
ewingangleasappar entareavari
eswiththi
sangl e.Thisr educesthe
externalpowereff
ici
ency.Thisisbecausemostoft heli
ghtistappedbyt otal i
nter
nal
ref
ractionwhenradiat
edatgr eaterthant hecri
ti
calangl
eforcrystalairinterface.

10.AplanarLEDf
abri
cat
edf
rom GaAshasarefr
act
ivei
ndexof2.
5.Comput
ethe
opti
calpoweremi
tt
edwhentr
ansmissi
onfact
ori
s0.68.
a)3.4%
b)1.23%
c)2.72%
d)3.62%
ViewAnswer

Answer :c
Expl
anat i
on: Theopt ical
poweremit
tedisgi
venby
2 2 2
Pe=PintFn /4nx =Pint(0.
680×1/
4×(
2.5))=0.0272Pint.
Hencepoweremi t
tedisonl
y2.
72%ofopt
ional
poweremi
tt
edi
nter
nal
l
y.
Where,
Fn2=tr
ansmissi
onf act
or
nx=refract
ivei
ndex.

11.AplanarLEDisfabricat
edfrom GaAsishavi
ngaopti
calpoweremitt
edis0.
018%of
opti
calpowergeneratedint
ernal
lywhichi
s0.018%ofopt
icalpowergener
atedi
nter
nal
l
y
whichis0.6P.Determineexter
nalpowereff
ici
ency
.
a)0.18%
b)0.32%
c)0.65%
d)0.9%
ViewAnswer

Answer :d
Explanati
on:Opt i
cal powergenerat
edext
ernal
l
yisgi
venby
ηcp=( 0.
018Pint/
2Pint)
*100
Wher e,
Pint=poweremi t
ted
ηcp=external poweref f
ici
ency.

12.ForaGaAsLED,
thecoupl
i
ngef
fi
ciencyi
s0.
05.Comput
etheopt
ical
lossi
ndeci
bel
s.
a)12.3dB
b)14dB
c)13.01dB
d)14.6dB
ViewAnswer

Answer:c
Expl
anati
on:Theopt i
call
ossi
ndeci
bel
sisgi
venby
-
Loss=-10log10ηc
Where,
ηc=coupli
ngef f
iciency.

13.I naGaAsLED,computethel
ossrel
ati
vet
oint
ernal
lygeneratedopti
calpoweri
nthe
fi
berwhent her
eissmall
airgapbet
weenLEDandfibercore.(
Fibercoupl
ed=5.5*10-
4
Pint)
a)34dB
b)32. 59dB
c)42dB
d)33. 1dB
ViewAnswer

Answer:b
Expl
anati
on:Thel ossi ndeci
bel
srel
ati
vet
oPinti
sgi
venby
-
Loss=-10log10Pc/
Pint
Where,
Pc=5.5*10-4Pint.

14.Deter
minecoupl
i
ngeffi
ciencyint
othefi
berwhenGaAsLEDi
sincl
osepr
oxi
mit
yto
fi
bercorehav
ingnumer
icalapert
ureof0.
3.
a)0.9
b)0.3
c)0.6
d)0.12
ViewAnswer

Answer:
a
Expl
anat
ion:
Thecoupli
ngef
fi
ciencyi
sgi
venby
2 2
ηc=(NA) =(0.
3) =0.
9.

15.I
fapart
icul
aropt
ical
poweriscoupledfr
om ani
ncoher
entLEDi
ntoal
ow-
NAf
iber
,
thedevi
cemustexhi
bitv
eryhi
ghradiance.
a)True
b)False
ViewAnswer

Answer :a
Explanati
on:Devi
cemusthav ever
yhighradi
ancespecial
l
yingradedindexfiberwhere
Lamber ti
ancoupl
ingef
fi
ciencywit
hsameNAi sabouthalft
hatofst
ep-indexf i
bers.
Thishighradi
anceisobt
ainedwhendi r
ectbandgapsemiconduct
orsarefabricatedwit
h
DHst ruct
uredri
venathi
ghcur r
entdensi
ti
es.

ThissetofOpti
cal
Communi cat
ionsMul
ti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“LEDStr
uct
ures”
.

1.Theamountofr
adi
ancei
npl
anert
ypeofLEDst
ruct
uresi
s__
___
___
___
_
a)Low
b)High
c)Zero
d)Negli
gibl
e
ViewAnswer

Answer:a
Expl
anati
on:PlanerLEDsar ef
abricat
edusingli
quidorv aporphaseepit
axialprocesses.
Herep-t
ypeisdiff
usedinton-typesubstrat
ewhichcreatesjuncti
on.Forwardcurrent
fl
owthroughjuncti
onprov i
desLamber ti
anspontaneousemi ssi
on.Thus,deviceemits
l
ightf
rom all
surfaces.Howeveral i
mitedamountofl i
ghtescapesthestructuredueto
tot
ali
nternal
refl
ecti
ont husprovi
dinglowradi
ance.

2.I
nopt
ical
fibercommuni
cat
ion_
___
___
___
___maj
ort
ypesofLEDst
ruct
uresar
eused.
a)2
b)4
c)6
d)3
ViewAnswer

Answer :c
Explanati
on:Opti
calf
ibercommuni cati
oninvol
vestheuseof6dif
fer
entmaj orLED
struct
ure.Thesearet
hesur faceemitt
er,edgeemit
ter,
thesuperl
uminescent,
the
resonantcavit
yLED,planarLEDsandDomeLEDs.

3.Ascompar edt oplanarLEDst r

uctur
e,DomeLEDshave___
____
___
____Ext
ernal
power
effi
ciency__ _________effect
iveemissi
onareaand_
___
____
_____r
adi
ance.
a)Greater,lesser ,r
educed
b)Higher ,
gr eater,r
educed
c)Higher ,
lesser ,i
ncreased
d)Great er
,gr eater,i
ncreased
ViewAnswer

Answer : b
Explanat i
on: I
nDomeLEDs, t
hediameterofdomei sselectedsoastomaxi mum the
i
nt ernalemi ssi
onreachi
ngsur facewit
hincriti
calangleofGaAs.Thus,domeLEDshav e
highext ernalpowereffi
ciency.Thegeomet ryofDomeLEDsi ssuchthatdomei smuch
l
ar gerthanact i
verecombi nati
onarea,
soi thasgreateremissi
oneraandr educedof
radiance.

4.Thetechni
quesbyBur
rosandDawsoni
nref
erencet
ohomost
ruct
uredev
icei
stouse
anetchedwelli
nGaAsstr
uctur
e.
a)True
b)False
ViewAnswer

Answer :
a
Expl
anation:BurrosandDawsonpr ov
idedat echniquetorestri
ctemissi
ontosmall
acti
veregionwithindev icethusprovi
dinghighradiance.Etchedwelli
naGaAssubstrat
e
i
susedt opreventheav yabsorpt
ionofemi t
tedr egi
onandphy si
cal
lyaccommodati
ng
thefi
ber.Thesest ructuresprovi
delowt her
mal impedanceal l
owinghighcur
rent
densit
iesofhighr adiance.

5.Insur
faceemit
terLEDs,
mor
eadv
ant
agecanbeobt
ainedbyusi
ng_
___
___
___
__
a)BHstructur
es
b)QCstructur
es
c)DHstructur
es
d)Gain-
guidedst
ruct
ure
ViewAnswer

Answer
:c
Expl
anati
on:
DHstr
uct
uresprovidehighef
fici
encyfr
om elect
ri
calandopti
cal
conf
inement
.Al
ongwi
theff
iciency,
theyprovi
delessabsorpt
ionofemit
tedradi
ati
on.

6.Int
ernalabsor
pti
oninDHsur
faceemi
tt
erBur
rost
ypeLEDsi
s__
___
___
___
_
a)Cannotbedetermined
b)Negligi
ble
c)High
d)Verylow
ViewAnswer

Answer:d
Expl
anati
on:Thelar
gerbandgapconfini
ngl
ayersandtheref
lect
ioncoeff
ici
entatt
he
backcry
stal
spaceishighinDHsurfaceemi
tterBurr
ostypeLEDs.Thisprov
idesgood
for
wardradi
ance.Thusthesest
ruct
ureLEDshaveverylessi
nter
nalabsorpt
ion.

7.DHsurfaceemittergeneral
lygi
ve__
___
___
___
_
a)Morecoupledopt i
calpower
b)Lesscoupledopticalpower
c)Lowcurrentdensiti
es
d)Lowradianceemi ssi
oninto-
fi
ber
ViewAnswer

Answer :a
Explanati
on:Theopt i
calpowercoupledint
oaf i
berdependsondistance,al
ignment
betweenemi ssionareaandfiber
,SLEDemi ssi
onpatter
nandmedi um betweenemitti
ng
areaandf i
ber.Allt
heseparametersifconsi
dered,
reducesref
ract
iveindexmi smat
ch
andi ncr
easesexternalpowereff
ici
encythusprovi
dingmorecoupledopt i
calpower
.

8.ADHsur faceemi
tt
erLEDhasanemi
ssi
onar
eadi
amet
erof60μm.Det
ermi
ne
emissionareaofsource.
a)1.534*10-6
b)5.423*10-3
c)3.564*10-2
d)2.826*10-9
ViewAnswer

Answer:d
Expl
anati
on:Theemissi
onareaAofsour
cei
sgi
venby
-
62 -
9 2
A=π( 30*
10 )=2.826*10 cm .

9.Estimat eopt i
calpowercoupl
edint
ofiberofDHSLEDhavi
ngemissi
onareaof
1.96*10-5,r
adi anceof40W/ cm2,
r numeri
calaper
tur
eof0.
2andFresnelr
efl
ect
ion
coeffi
cientof0. 03atindexmatchedfi
bersurf
ace.
a)5.459* 10-5
b)1.784* 10-3
c)3.478* 102
d)9. 10-5
551*
ViewAnswer

Answer:d
Expl
anation:Theopti
cal powercoupl
eri
nthest
epi
ndexf
iberofSLEDi
sgi
venby
2
Pc=π( 1-
r)ARD( NA)
=3.14(1-0.03)
*1. 10-5*
96* 40*
( 2)2
0.
-5
=9.551*10 W.

10.Inamul t
imodef
iber
,muchofl
i
ghtcoupl
edi
nthef
iberf
rom anLEDi
s__
___
___
___
_
a)Incr
eased
b)Reduced
c)Lost
d)Unaffect
ed
ViewAnswer

Answer:c
Expl
anation:
Opticalpowerfr
om ani
ncoher
entsour
ceisi
nit
ial
l
ycoupledi
ntolargeangle
ray
sf al
l
ingwithi
nacceptanceangl
eoffi
berbuthav
emoreenergythanMeri
dionalray
s.
Energyfr
om theseraysgoesint
othecl
addi
ngandthusmaybel ost
.

11.Determi netheover
all
powerconver
sioneff
ici
encyoflenscoupl
edSLEDhavi
ng
forwardcurr entof20mAandforwar
dv ol
tageof2Vwi t
h170μWofopt i
calpower
l
aunchedi ntomul ti
modestepi
ndexfi
ber.
a)1.256*10-5
b)4.417*102
c)4.25*10-3
d)2.14*10-3
ViewAnswer

Answer:c
Expl
anati
on:Theov
er al
lpowerconv
ersi
onef
fi
ciencyi
sdet
ermi
nedby
-
6 -
3
ηpc=Pc/P=170*10 /20*10 *2
=4. 10-3.
25*

12.Theoveral
lpowerconversi
oneffi
ciencyofel
ectr
icall
enscoupl
edLEDi
s0.
8%and
powerappli
ed0.0375V.Determineoptical
powerlaunchedi
ntofi
ber.
a)0.03
b)0.05
c)0.3
d)0.01
ViewAnswer

Answer:
a
Expl
anat
ion:
Opt
ical
powerl
aunchedcanbecomput
edby
ηpc=Pc/P
Pc=ηpc*P
=0.
8*0.0375
=0.
03.

13.Mesastruct
uredSLEDsareused_
___
___
___
__
a)Toreduceradi
ance
b)Toincr
easeradiance
c)Toreducecurr
entspreadi
ng
d)Toincr
easecurrentspr
eading
ViewAnswer

Answer :c
Explanati
on:Thepl anarstr
uctur
esofBurros-t
ypeLEDall
owlateralcur
rentspreadi
ng
special
lyforcontactdiametersl
essthan25μm. Thi
sresul
tsinreducedcurrentdensi
ty
andef f
ectiv
eemi ssionareagreatert
hancontactar
ea.Thi
stechniquetoreducecurrent
spreadinginverysmal ldevi
cesisMesastructur
edSLEDs.

14.TheInGaAsPisemitt
ingLEDsar
ereal
i
zedi
nter
msofr
est
ri
ctedar
e__
___
___
___
_
a)Lengthstr
ipgeometr
y
b)Radiance
c)Curr
entspreadi
ng
d)Coupledopti
calpower
ViewAnswer

Answer :a
Explanati
on:Theshortstri
pedst
ruct
ureoftheseLEDsaround100μmimprovesthe
externalef
fi
ciencyofLEDsbyreduci
ngint
ernalabsor
pti
onofcarr
ier
s.Theseareal
so
cal
ledt r
uncatedstr
ipE-LEDs.

15.Theact
ivel
ayerofE-
LEDi
sheav
il
ydopedwi
th_
___
___
___
__
a)Zn
b)Eu
c)Cu
d)Sn
ViewAnswer

Answer:
a
Expl
anat
ion:
Zndopingreducest
heminori
tycar
ri
erl
i
feti
me.Thusthisi
mprov
est
he
devi
cemodulat
ionbandwidt
hhenceact
ivel
ayeri
sdopedinZninE-LEDs.

ThissetofOpti
cal
Communicati
onsMul
ti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“LEDChar
act
eri
sti
cs”.

1.I
ntri
nsi cal
ly__
____
___
___
___
__ar
eav
eryl
i
neardev
ice.
a)I
njectionlasers
b)DHl aser s
c)Gai
n-gui
ded
d)LEDs
ViewAnswer

Answer :d
Explanati
on:Thei deall
i
ghtout putpoweragai
nstcurrentcharact
eri
sti
csforanLED
l
inear.Thistendst obemor esuitabl
eforanal
ogtransmissionwhereseveralconst
rai
nts
areputinlineari
tyofopticalsource.

2.Li
nearizi
ngci
rcui
ttechni
quesar
eusedf
orLEDs.
a)True
b)False
ViewAnswer

Answer:a
Expl
anati
on:Inpract
ice,
LEDsexhibi
tnonli
nearit
iesdependingonconfi
gurat
ionused.
Thus,t
oallowit
susedi nhighqual
it
yanalogtransmissi
onsy st
em andtoensurel
inear
perf
ormanceofdev i
ce,l
inear
izi
ngci
rcui
ttechniquesisused.

3.Theinter
nal quantum ef f
ici
encyofLEDsdecr
easi
ng_
___
___
___
___
__wi
th
____
_ _
_____
_ __
__t emper ature.
a)Exponential
ly,decr easing
b)Exponential
ly,i
ncr easing
c)Linear
ly,i
ncreasing
d)Linear
ly,decreasing
ViewAnswer

Answer :b
Explanati
on:
Theli
ghtemitt
edfrom LEDsdecreases.Thisi
sduet oi
ncreaseinp-n
j
unct i
ontemper
atur
e.Thus,thi
sresul
tsinexponenti
all
ydecreasi
ngi
nternalquant
um
eff
iciencywi
tht
emperatur
eincrement.

4.Toutil
ize_ _
__ _
_ _
_ ___
___
___
____ofSLDsatel
evat
edt
emper
atur
es,
theuseof
ther
moelectriccool ersisi
mport
ant.
a)Low-i
nt er
nal effi
ciency
b)High-
internaleffi
ciency
c)High-
powerpot ential
d)Low-powerpot ential
ViewAnswer

Answer:c
Expl
anati
on:Theoutputcharacter
ist
icsofSLDsarety
pical
lyofnonli
nearinnature.Thi
s
i
sobservedwi t
hakneebecomi ngapparentatanoperat
ingtemperaturearound20
degreec.Thus,t
outi
li
zehigh-powerpotenti
aloft
hesedevicesatel
ev at
edt emperat
ure,
ther
moelectr
iccool
ersarenecessari
lyused.
5.Forpart
icul
armat erial
swi t
hsmal
l
erbandgapener
giesoper
ati
ngi
n__
___
___
___
__
wavelengt
h,thel
inewi dthtendst
o__
___
______
___
a)2.1to2.75μm, i
ncr ease
b)1.1to1.7μm,increase
c)2.1to3.6μm,decr ease
d)3.5to6μm, decrease
ViewAnswer

Answer :
b
Explanat
ion:Formater
ial
swit
hsmall
erbandgap,l
inewi
dthi
ncreasesto50t
o160nm.
Thisincr
easesinbandgapisduet
oincreaseddopingl
evel
sandf or
mati
onofbandt
ail
stat
es.

6.Theacti
vel
ayercomposi
ti
onmustbeadj
ust
edi
fapar
ti
cul
arcent
erwav
elengt
his
desi
red.
a)True
b)False
ViewAnswer

Answer :a
Explanat
ion:
Thereisadif
fer
enceinout
putspectr
abet
weensurf
aceandedgeemi
tt
ing
LEDswhendev iceshavegener
all
yheavi
lydopedandl
i
ghtl
ydopedact
ivel
ayer
sby
reducti
onindoping.

7.Inopt
ical
fibercommunicat
ion,theelect
ri
calsi
gnaldr
oppingtohal
fit
sconst
antv
alue
duetomodulatedport
ionofopticalsi
gnalcorr
espondst
o_ _
_ _
___
a)6dB
b)3dB
c)4dB
d)5dB
ViewAnswer

Answer:b
Expl
anati
on:Modulati
onbandwidt
hinopt i
calcommuni cationisoft
endefinedin
el
ectr
ical
/opt
icalt
erms.Sowhenconsi der
ingelect
rical
circuitr
yinopt
icalfi
bersyst
em,
el
ectr
ical3dBpointorfr
equencyatwhichoutputelectr
ical poweri
sreducedby3dB
bandwidt
hwithrespectt
oinputel
ectr
icalpower.

8.Theopt
ical
3dBpoi
ntoccur
swhencur
rent
srat
ioi
sequal
to_
___
___
___
___
a)83
b)22
c)12
d)34
ViewAnswer

Answer
:c
Expl
anati
on:I
nopti
calr
egi
me,thebandwi
dthisdefi
nedbyf
requencyatwhi
chout
put
curr
enthasdr
oppedto½outputi
nputcur
rentsyst
em.

9.Theopti
calbandwi
dthi
s__
___
___
___
__t
heel
ect
ri
cal
bandwi
dth.
a)Small
er
b)Great
er
c)Sameas
d)Zerowit
hrespectt
o
ViewAnswer

Answer :b
Explanati
on:Thedif
fer
encebetweenopticalandelect
ri
calbandwidthIntermsof
frequencydependsontheshapeofthefrequencyresponseofthesy stem.Ift
hesystem
responseisassumedt obeGaussi
an,thenopt i
cal
bandwidthisaf actorof√2great
er
thanelectr
ical
bandwidth.

10.Whenaconst antd.c.dr
ivecurr
enti
sappli
edt odevi
ce,theopti
calo/
ppoweri
s320
μm.Det ermi neoptical
o/ ppowerwhendevicei
smodul atedatfr
equency30MHzwit
h
minorit
ycar rierr
ecombi nat
ionli
fet
imeofLEDi.e.5ns.
a)4.49*10-12
b)6.84*10-9
c)1.29*10-6
d)2.29*10-4
ViewAnswer

Answer :d
Explanati
on: Theoutputo/ pat30MHzi s
2 1/
2
Pc(30MHz)=Pdc/ (
1+( wΓi))
10-6/ 10-6* 10-9)
2 1/
=320* (1+(2π*
30* 5* )2
-4
=2.29*10 W.

11.Theopt i
cal
powerat20MHzi s246.
2μW.Deter
minedcdr
ivecur
rentappl
i
edt
o
devi
cewi t
hcarri
err
ecombinat
ionl
if
eti
meforLEDof6ns.
a)3. 10-4
48*
b)6. 10-9
42*
c)1. 10-3
48*
d)9. 10-12
48*
ViewAnswer

Answer :a
Explanati
on:Theopti
caloutputpowerat20MHzis
2 1/
Pe(20MHz)=Pdc/ (
1+(WTi ))2
10-6=Pdc/ 10-6* 10-9)
2 1/
246.2* (1+(2π*20* 5* )2
-
4
Pdc=3. 48*10 .

12.Det
ermi
net
he3dBel
ect
ri
cal
bandwi
dthat3dBopt
ical
bandwi
dthBoptof56.
2MHz.
a)50.
14
b)28.
1
c)47.
6
d)61.
96
ViewAnswer

Answer:b
Expl
anati
on:The3dBel
ect
ri
cal
bandwi
dthi
sgi
venby
B=Bopt /√2
=56.2/
2
=28.1MHz.

13.The3dBelect
ri
cal
bandwi
dthBi
s42MHz.Det
ermi
ne3dBopt
ical
bandwi
dthBopt
.
a)45.18
b)59.39
c)78.
17
d)94.14
ViewAnswer

Answer:
b
Expl
anat
ion:
The3dBel
ect
ri
cal
bandwi
dthi
s
B=Bopt/√2
Bopt=B*√2
=42*√2
=59.39MHz.

14.Determi nedegr
adat
ionr
ateβr
ifconst
antj
unct
iont
emper
atur
eis17degr
eecel
sius.
-11
a)7.79*10
b)7.91*10-11

c)6. 10-11
86*
d)5. 10-11
86*
ViewAnswer

Answer:a
Expl
anation: Thedegradati
onr ateβri
sdet er
minedby
βr=β0exp( -Ea/KT)
=1.89*107exp( -1*
1.602*10-19/
1. 10-23*
38* 290)
=7.79*10-11h-1.

15.Det
ermineCW oper
ati
ngl
i
fet
imef
orLEDwi
thβr
t=-
0.58anddegr
adat
ionr
ateβr=
-
11 -
1
7.
86*10 h .
a)32.
12
b)42
c)22.
72
d)23.
223
ViewAnswer

Answer:c
Expl
anation:TheCW oper
ati
ngl
i
fet
imei
sgi
venby
t=Ln0.58/ 7.
86*10-11
=22.72h-1

6.Quest
ionsonOpt
ical
Det
ect
ors

Thesecti
oncont ai
nsquesti
onsondevicety
pes,absorpt
ion,
opti
caldet
ect
ionpr
inci
ples,
quantum ef
fi
ciency,semi
conduct
orphotodi
odes,i
nfrar
edphotodi
odesandmetal
semiconductor
s

ThissetofOpti
calCommunicat
ionsMul
ti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Devi
ceTypes”
.

1.___
_ __
____
__conv
ert
sther
ecei
vedopt
ical
signal
int
oanel
ect
ri
cal
signal
.
a)Detector
b)Attenuat
or
c)Laser
d)LED
ViewAnswer

Answer :
a
Explanat
ion:Adetectorisanessenti
alcomponentofanopti
calf
ibercommuni cati
on
system.Itdi
ctat
estheov erall
syst
em perf
ormance.I
tsfunct
ioni
st oconvertopti
cal
si
gnal i
ntoanelectr
icalsignal
.Thi
select
ri
calsi
gnali
sthenampli
fiedbeforefurt
her
processi
ng.

2.Thefir
stgener
ati
onsy
stemsofopt
ical
fibercommuni
cat
ionhav
ewav
elengt
hs
between____
____
___
a)0.2and0.3μm
b)0.4and0.6μm
c)0.8and0.9μm
d)0.1and0.2μm
ViewAnswer

Answer :c
Explanati
on:Thefi
rstgener
ati
onsystemsoperat
edatabit-
rat
eof45Mbpswith
repeaterspaci
ngof10km.I toper
atesatwavel
engt
hsbetween0.
8and0.9μm.These
wav el
engthsarecompatibl
ewithAlGaAsl
aserandLEDs.
3.Thequant
um ef
fi
ciencyofanopt
ical
det
ect
orshoul
dbehi
gh.
a)True
b)False
ViewAnswer

Answer:
a
Expl
anat
ion:Thedetect
ormustsati
sfystr
ingentrequi
rementsf
orper f
ormanceand
compati
bil
it
y.Thephotodetect
ort
husproducesamaxi mum el
ectri
calsi
gnalf
oragiv
en
amountofoptical
power;i
.e.t
hequantum eff
ici
encyshouldbehigh.

4.Whichofthefoll
owingdoesnotexpl
aint
her
equi
rement
sofanopt
ical
det
ect
or?
a)Highquantum eff
ici
ency
b)Lowbiasv ol
tages
c)Smallsi
ze
d)Lowfidel
it
y
ViewAnswer

Answer :d
Explanation:Thesizeofthedetectormustbesmal l
foreff
ici
entcoupl
i
ngtothef
iber
.
Also,ideall
y,thedetect
orshouldnotrequi
reexcessi
vebiasvolt
agesandcur
rent
s.The
fi
delit
yandquant um ef
fi
ciencyshouldbehigh.

5.Howmanydev
icet
ypesar
eav
ail
abl
eforopt
ical
det
ect
ionandr
adi
ati
on?
a)One
b)Two
c)Three
d)Four
ViewAnswer

Answer :
b
Expl
anation: Twotypesofdevi
cesareusedf oropti
caldetecti
onandr adi
ati
on.These
areexternalphotoemissi
onandint
ernalphotoemissiondevices.Ext
ernal
photoemi ssi
ondev i
cesaret
oobulkyandr equir
ehighv ol
tagesforoperat
ion.I
nter
nal
devi
cespr ov
idegoodperfor
manceandcompat ibi
l
ity
.

6.The_ ___
_______processtakespl
acei
nbot
hext
ri
nsi
candi
ntr
insi
csemi
conduct
ors.
a)Avalanchemul ti
pli
cation
b)Externalphotoemission
c)Int
ernalphotoemission
d)Dispersi
on
ViewAnswer

Answer:
c
Expl
anat
ion:Dur
ingi
ntr
insi
cabsorpti
on,thereceiv
edphotonsexcit
eelect
ronsf r
om t
he
val
encebandandtowardstheconducti
onbandi nthesemiconduct
or.Extr
insi
c
absor
pti
oninvol
vesi
mpur i
tycent
erscreatedwiththemater
ial
.General
ly,
intri
nsi
c
absor
pti
oni
spr
efer
redf
ori
nter
nal
phot
oemi
ssi
on.

7._______
___
__arewidel
yusedi
nfi
rstgener
ati
onsy
stemsofopt
ical
fiber
communi cat
ion.
a)p-ndiodes
b)4-all
oys
c)3-all
oys
d)Sil
iconphotodi
odes
ViewAnswer

Answer :
d
Explanat
ion:Thefir
stgener
ationsystemsoperatesatwavel
engt
hs0. 8and0.9μm.
Sil
i
conphot odiodeshavehi
ghsensi t
ivi
tyov
erthe0.8-0.
9μm wavelengt
hbandwith
adequatespeed, l
ongter
m stabil
i
ty.Hence,si
l
iconphotodi
odesarewidelyusedi
nfi
rst
generati
onsy st
ems.

8.Si
liconhasi
ndi
rectbandgapener
gyof_
___
___
___
___
___
__
a)1.2eV
b)2eV
c)1.14eV
d)1.9eV
ViewAnswer

Answer:c
Expl
anation:
Sil
icon’
sindi
rectbandgapenergyof1.
14eVgivesal ossi
nresponse
above1.09μm.Toav oi
dthis,nar
rowerbandgapmater
ial
sareused.Hence,si
li
con’
s
useful
nessisli
mitedtofi
rstgenerat
ionsy
stemsandnotforsecondandthir
d
generat
ionsyst
ems.

9.Whichoft hefol
lowingdetect
ori
sfabr
icat
edf
rom semi
conduct
oral
l
oys?
a)Photoconductiv
edet ect
or
b)p-i
-ndetector
c)Photodi
odes
d)Photoemissiondetector
s
ViewAnswer

Answer:a
Expl
anati
on:Thedet ect
orsfabr
icatedf rom semiconduct
orall
oyscanbeusedforl
onger
wavel
engths.Photoconducti
vedet ectorandhetero-j
unct
iontr
ansi
storhav
efoundfav
or
asapotenti
aldetectoroverawav elengthrangeof1.1to1.6μm.

10.Sil
iconphot
odi
odespr
ovi
dehi
ghshuntconduct
ance.
a)True
b)False
ViewAnswer
Answer:b
Expl
anati
on:Semi
conductorphotodi
odesprovi
debestsol
uti
onfordet
ecti
oninopti
cal
fi
bercommunicat
ions.Si
l
iconphotodiodeshav
ehighsensi
ti
vi
ty,
negli
gibl
eshunt
conduct
anceandlowdarkcurrent

ThissetofOpti
calCommunicat
ionsMul t
ipl
eChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Opti
calDet
ect
ionPrinci
ples”
.

1.P-nphot
odi
odei
sfor
war
dbi
ased.
a)True
b)False
ViewAnswer

Answer :b
Explanati
on:
p-nphotodi
odei
ncludespandnregions.Theel
ectri
cfi
elddevel
oped
acrossthep-nj
uncti
onsweepsholesandel
ectr
onst opandnr egi
onsrespect
ivel
y.P-
n
photodiodei
sthusrever
sebi
asedduetorever
seleakagecurr
ent.

2.Thedeplet
ionregi
onmustbe___
___
___
_ _
_toal
l
owal
argef
ract
ionoft
hei
nci
dent
l
ighttobeabsorbedint
hedevi
ce(
phot
odiode)
.
a)Thick
b)Thin
c)Long
d)Inact
ive
ViewAnswer

Answer :
a
Explanat
ion:Inp-nphot
odi
ode,i
ntr
insi
ccondit
ionsarecr
eat
edinthedepletionregion.
Thedepletionregi
onmustbethi
ckinordertoachiev
emaximum carr
ierpairgeneration.
Also,i
tswidthmustbelimi
tedtoenhancethespeedofoper
ati
onofthep- nphot odiode.

3.Theprocessofexcit
ati
onofanelect
ronfr
om val
encebandtoconduct
ionband
l
eavesanempt yhol
eintheval
encebandandiscal
l
edas_ __
____
____
_
a)Detect
ion
b)Absorpti
on
c)Degenerati
onofanelectr
on-
holepai
r
d)Regenerati
onofanelectr
on-
holepai
r
ViewAnswer

Answer :d
Explanation:Aphotonisinci
dentinthedepl
eti
onregionofadevi
cehasanenergy
greaterthanorequal t
othebandgapener gyofthefabri
cati
ngmater
ial
.Thiswi
llcause
excit
ationofanel ect
ronfrom val
encetotheconducti
onband.Thi
screatesanempty
holeinv alencebandwhichisrefer
redtoasphoto-
generati
onofanel
ectron-
hol
epai r
.

4._
___
___
___
___
___
__al
way
sleadst
othegener
ati
onofahol
eandanel
ect
ron.
a)Repulsion
b)Dispersion
c)Absorption
d)Attenuation
ViewAnswer

Answer :
c
Expl
anation:Absor
pti
onaffectst
heelect
ronandexcit
esitt
osomeot herlevelsay
conducti
onband.Thisiscall
edasphoto-
generat
ionasabsorpt
ional
way sleadstothe
generati
onofholeandelectr
on.Thi
sdoesnotmeant hatbot
hcontri
butetot he
el
ectronictr
anspor
t.

5.Theelectr
onholepai
rsgener
atedi
naphot
odi
odear
esepar
atedbyt
he_
___
___
___
__
a)Magnet i
cfiel
d
b)Elect
ricfi
eld
c)Stati
cfiel
d
d)Depleti
onregion
ViewAnswer

Answer :
b
Explanat
ion:Elect
ri
cfiel
dsepar
atest
heelect
ron-hol
epai
rsinaphotodi
ode.Theelect
ric
fi
elddist
ribut
ionisdeter
minedbyanint
ernal
andanexternalf
iel
dcomponent.Areverse
bi
asv olt
ageisusuallyappl
i
edtothep-nphot
odiode.

6.El
ectri
cfi
eldi
nthedepl
eti
onr
egi
onshoul
dbehi
gh.
a)True
b)False
ViewAnswer

Answer :a
Explanati
on:Theelectri
cfi
eldi
nthedepl
eti
onregi
onisalwayskepthi
ghinorderto
extr
actallphotogenerat
edcarr
ier
s.Onl
ytheextr
act
edelectr
onholepai
rscontri
butet
o
theov er
allphot
ocurrent
.

7.Thephotocur
rentofanopt
ical
det
ect
orshoul
dbe_
___
___
___
a)Less
b)More
c)Li
near
d)Non-l
inear
ViewAnswer

Answer:
c
Expl
anat
ion:Alinearrel
ati
onshi
pmustexi
stbetweenthei
ntensi
tyoft
heinci
dentli
ght
andthephotocurrent
.Thismakest
hephotodi
odefreeofnoi
se.I
tincr
easessyst
em
perf
ormance.
8.Howmanytypesofopt
ical
det
ect
orsar
eav
ail
abl
e?
a)One
b)Four
c)Two
d)Three
ViewAnswer

Answer:d
Expl
anati
on:Threetypesofopti
caldet
ectorsareavai
labl
e.Thesearedi
odes,
phot
oconductorsandphoto-t
ransi
stor
s.Diodesincl
udep-nphotodi
odes,p-
i-
ndi
odes,
aval
anchephotodiodesandschott
kydiodes.

ThissetofOpti
cal
Communi
cat
ionsMul
ti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Absor
pti
on”
.

1.Theabsorpti
onofphot onsi
naphot
odi
odei
sdependenton_
___
___
___
a)Absorpti
onCoeffi
cientα0
b)Propert
iesofmaterial
c)Chargecarr
ieratj
unction
d)Amountofl i
ght
ViewAnswer

Answer:a
Expl
anati
on:Absor
pti
oninaphotodiodeisforproducingcarr
ierpans.Thus,
photocur
renti
sdependentonabsor
ptioncoeff
icientα0ofthelighti
nsemi conduct
or
usedtofabri
cat
edevice.

2.Thephot
ocur
renti
naphot
odi
odei
sdi
rect
lypr
opor
ti
onal
toabsor
pti
oncoef
fi
cient
.
a)True
b)False
ViewAnswer

Answer:a
Expl
anation:Theabsorptionofphotonspr
oducescar
ri
erpai
rs.Thus,
phot
ocur
renti
s
dependentonabsor pti
oncoef f
ici
entandi
sgiv
enby
I=Poe(1-h)/
hf(1-
exp( -
αrd))
Wherer=Fr esnelcoeffi
cient
D=wi dthofabsorptionregion.

3.Theabsor pt
ioncoeffi
cientofsemi
conduct
ormat
eri
alsi
sst
rongl
ydependenton
____
______
a)Properti
esofmat er
ial
b)Wav el
ength
c)Amountofl i
ght
d)Ampl i
tude
ViewAnswer
Answer:b
Expl
anation:Insomecommonsemi conduct
ors,ther
eisav ari
ati
oni
nabsorpt
ioncurves
formaterial
s.Iti
sfoundthatt
heyareeachsuitablef
ordi
fferentwav
elengt
handrelat
ed
appl
icati
ons.Thisisduetodif
fer
enceinbandgapener gi
es.Thusabsorpti
oncoef
fici
ent
dependsonwav el
ength.

4.Dir
ectabsor
pti
onr
equi
resassi
stanceofphot
on.
a)True
b)False
ViewAnswer

Answer:b
Expl
anation:I
ndi
rectabsor
ptionrequi
resphotonassi
stanceresul
ti
nginconver
sat
ionof
energyandmoment um.Thismakest ransi
ti
onprobabi
lit
ylessli
kel
yfori
ndir
ect
absorpt
ionthandir
ectabsorpti
onwher enophotonisi
ncluded.

5.Inopticalfi
bercommuni
cat
ion,
theonl
yweakl
yabsor
bingmat
eri
alov
erwav
elengt
h
bandr equir
edis?
a)GaAs
b)Sil
icon
c)GaSb
d)Germani um
ViewAnswer

Answer:
c
Expl
anat
ion:
Thetr
ansi
ti
onoverwav
elengt
hbandinsil
iconisduetoi
ndir
ectabsor
pti
on
mechani
sm.Thi
smakessil
i
conweaklyabsor
bentoverpart
icul
arwav
elengt
hband.

6.Thethr
eshol
dfori
ndi
rectabsor
pti
onoccur
satwav
elengt
h__
___
___
__
a)3.01μm
b)2.09μm
c)0.92μm
d)1.09μm
ViewAnswer

Answer:
d
Expl
anat
ion:Thebandgapforsi
l
iconis4.10eVcorr
espondi
ngtot
hreshol
dof0.
30μm
i
nultr
avi
olet
.Thusit
’sout
sidewavel
engthrangei
stheonewhichi
srequir
ed.

7.Thesemiconduct
ormat
eri
alf
orwhi
cht
hel
owestener
gyabsor
pti
ont
akespl
acei
s?
a)GaAs
b)Sil
i
con
c)GaSb
d)Germani
um
ViewAnswer
Answer:d
Expl
anati
on:Germani
um absor
pti
onisbyindi
rectopt
icaltr
ansi
ti
on.Thethr
eshol
df or
di
rectabsor
pti
onisat1.
53μm.Belowthi
s,germanium becomesstrongl
yabsor
bingto
corr
espondi
ngli
nk.

8.Thewavel
engt
hrangeofi
nter
estf
orGer
mani
um i
s__
___
___
__
a)0.8t
o1.6μm
b)0.3t
o0.9μm
c)0.4t
o0.8μm
d)0.9t
o1.8μm
ViewAnswer

Answer :a
Explanation: Germanium i
susedinfabr
icati
onofdet
ect
orsov erthewholewavel
engt
h
rangei.e.fi
r standsecondgenerati
on0.8to1.6μm whi
l
especi al
lytaki
ngint
o
considerationt hati
ndir
ectabsor
pti
onwi l
loccurupt
oathresholdof1.85μm.

9.Aphotodiodeshouldbechosenwi
tha_
___
___
___
___
___l
esst
hanphot
onener
gy.
a)Dir
ectabsorpti
on
b)Bandgapener gy
c)Wavelengthrange
d)Absorpti
oncoeffi
cient
ViewAnswer

Answer :
d
Explanat
ion: Aphotodi
odeselect
ionmustbemadebychoosi ngthatdiodehav i
ngband
gapener gylessthanphotonenergycor r
espondi
ngt olongestoper
ati
ngwav elengt
h.
Thisprovideshighabsorpti
oncoeffi
cientwhichensuresagoodr esponseandl i
mit
sthe
ther
mal l
ygener at
edcarri
erstoobtai
nl owdarkcurrentwithnoinci
dentlight
.

10.___
___
__ _
___
___
_phot
odi
odeshav
elar
gedar
kcur
rent
s.
a)GaAs
b)Sil
i
con
c)GaSb
d)Germanium
ViewAnswer

Answer:c
Expl
anati
on:Germani
um photodiodespr
ov i
denar r
owbandgapsascompar
edt
oot
her
semiconduct
ormateri
als.Thi
sismaindisadvantagewi
thuseofger
mani
um
phot
odiodesatshor
terwav el
engthandt
hust heyhavel
argedar
kcurr
ent
.

11.Forfabri
cat
ionofsemiconduct
orphot
odi
odes,
ther
eisadr
awbackwhi
l
e
consi
dering___
____
_____
_____
a)GaAs
b)Sil
icon
c)GaSb
d)Germani
um
ViewAnswer

Answer:d
Expl
anati
on:Duetodr
awbackwi t
hgermanium t
obeusedasfabr
icati
ngmateri
al,
ther
e
i
sani ncr
easedi
nvest
igat
ionofdi
rectbandgapII
IandVal
loy
sforlongerwavel
ength
regi
on.

12._____
___
____
___
__mat
eri
alsar
epot
ent
ial
l
ysuper
iort
oger
mani
um.
a)GaAs
b)Sil
icon
c)GaSb
d)II
I–Val l
oys
ViewAnswer

Answer :d
Explanati
on:Thebandgapenergi
esforII
I–Vall
oysmat er
ial
scanbet ai
lor
edto
requir
edwav el
ength.Thi
scanbeachiev
edbychangingrel
ati
veconcentr
ati
onofthei
r
constit
uentswhichresul
tsi
nlowdarkcurr
ent
s.Thus,I
II–Valloy
saresuperior
potenti
all
ytogermanium.

13._____
_______al
l
oyssuchasI
nGaAsPandGaAsSbdeposi
tedonI
nPandGaSb
substr
ate.
a)Ternary
b)Quaternary
c)Gain-
guided
d)II
I–Val loys
ViewAnswer

Answer:a
Expl
anation:
Ter nar
yall
oysareusedtofabr
icat
ephot
odi
odesforl
ongerwavel
engt
h
band.Thus,theseall
oyssuchasInGaAsPandGaAsSbaredeposi
tedonInPandGaSb
substr
ates.

14._ _
___
___
____
___
__al
l
oyscanbef
abr
icat
edi
nhet
ero-
junct
ionst
ruct
ures.
a)InGaSb
b)III–Vall
oys
c)InGaAsP
d)GaAsSb
ViewAnswer

Answer :b
Explanati
on:II
I–Vall
oysenhancest
hehi
ghspeedoper
ati
onsofheter
o-j
unct
ion
str
uctures.Thust
hesestr
uctur
escanbef
abri
catedwi
thII
I-
Val
loys.
15.Theall
oyslat
ti
cemat
chedt
oInPr
espondst
owav
elengt
hsupt
o1.
7μm i
s?
a)InAsSb
b)III–Vall
oys
c)InGaSb
d)InGaAs
ViewAnswer

Answer:
d
Expl
anat
ion:Alt
hought her
ewer edif
fi
cul
ti
esingrowthofIOnGaAsall
oys,t
hepr obl
ems
arenowreduced.Thesealloy
sl at
ti
cematchedtoInPrespondi
ngtowav el
engtharound
1.7μmarewidel
yutil
izedforfabri
cati
onofphot
odiodesoperat
ingar
ound1. 7μm.

Thi
ssetofOptical
Communi
cat
ionsMcqsfocuseson“
Quant
um Ef
fi
ciency,
Responsi
vi
tyandLong–Wavel
engthCut
-Of
f”.

1.Thefract
ionofi nci
dentphot
onsgener
atedbyphotodi
odeofel
ect
ronsgener
ated
coll
ect
edatdet ectorisknownas__
_____
____
___
_____
a)Quantum eff
iciency
b)Absorpti
oncoef fi
cient
c)Responsivi
ty
d)Angerrecombi nati
on
ViewAnswer

Answer :a
Explanati
on:Ef
fi
ciencyofaparticul
ardeviceisobtainedbyrati
oofinputgi
vent
othatof
outputobtai
ned.Thus,si
milarl
y,inphotodiode,
inputi.e.i
nci
dentphot
onandoutput
generatedel
ectr
onsandt heirr
atioisquantum effi
ciency.

2.Inphotodetect
ors,
ener
gyofi
nci
dentphot
onsmustbe_
___
___
___
___
___bandgap
energy.
a)Lesserthan
b)Greaterthan
c)Sameas
d)Negli
gible
ViewAnswer

Answer:
b
Expl
anat
ion:
Whi
leconsi
der
ingi
ntr
insi
cabsor
pti
onpr
ocess,t
heenergyofi
ncident
phot
onmustbegreat
ert
hanbandgapenergyofmat
eri
alf
abri
cat
ingphotodetect
or.

3.GaAshasbandgapenergyof1.
93eVat300K.Det
ermi
newav
elengt
habov
ewhi
ch
materi
alwi
llceaset
ooper
ate.
a)2.
431*10-5
b)6.
424*10-7
c)6.
023*103
d)7.
234*10-7
Vi
ewAnswer

Answer:b
Expl
anation:Thelongwav elengt
hcut of
fisgivenby
λc=hc/Eg=6. 6268*10-34*
2.998*108/
1.93*1.
602*10-19
-7
=6.424*10 μm.

4.Thelongcut of
fwav
elengt
hofGaAsi
s0.
923μm.Det
ermi
nebandgapener
gy.
a)1. 10-7
478*
b)4.265*10-14
c)2. 10-9
784*
d)2.152*10-19
ViewAnswer

Answer:d
Expl
anation:Longwav elengthcutoffofphot
odet ect
ori
sgi
venby
λc=hc/Eg
Eg=hc/λc=6. 10-34*
6268* 2.
998*108/0.
923*10-6
-19
=2.152*10 eV.

5.Quantum ef
fi
ci
encyi
saf
unct
ionofphot
onwav
elengt
h.
a)True
b)False
ViewAnswer

Answer:
a
Expl
anat
ion:Quantum eff
ici
encyisl
esst hanunityasal
lofinci
dentphot onsar
enot
absor
bedtocreateelect
ronsholespairs.Forexamplequantum ef
fi
ciencyof60%i s
equi
val
entto60%ofel ect
ronscoll
ectedper100phot ons.Thuseffi
ciencyisafunct
ion
ofphot
onwav el
engthandmustbedet erminedataparti
cularwavel
engt h.
11
6.Det
erminequantum ef
fi
ciencyifi
nci
dentphot
onsonphot
odi
odesi
s4*
10 and
el
ectr
onscoll
ectedatter
minalsis1. 1011?
5*
a)50%
b)37.
5%
c)25%
d)30%
ViewAnswer

Answer:b
Expl
anation:Quant um ef
fi
ciencyi
sgivenby
Quantum Ef f
ici
ency=No.ofel ect
ronscol
lect
ed/
No.ofi
nci
dentphot
ons
11 11
=1.5*10 / 4*10
=0.375*100
=37.5%.
7.Aphot odiodehasquantum ef
fi
ciencyof45%andinci
dentphot
onsar 1011.
e3*
Determineel ect
ronscol
l
ectedatter
mi nal
sofdev
ice.
a)2.456*109
b)1.35*1011
c)5.245*10-7
d)4.21*10-3
ViewAnswer

Answer:b
Expl
anation:Quantum ef
fi
ciencyi
sgi v
enby
Quantum effi
ci
ency=No.ofel ect
ronscoll
ected/
No.ofinci
dentphotons
El
ectronscoll
ected=Quantum effi
ciency*numberofinci
dentphotons
=45/100*3* 1011
=1.35*1011.

8.Thequantum ef
fi
ciencyofphotodiodeis40%wi
thwav
elengt
hof0. 10-6.
90*
Determinet
heresponsivi
tyofphotodiodes.
a)0.20
b)0.52
c)0.29
d)0.55
ViewAnswer

Answer:c
Expl
anati
on:Responsivi
tyofphot odi
odesi sgi
venby
R=ηeλ/ hc
=0.4*1.
602*10-19*0.
90*10-6/
6.626*10-34*3*
108
-
1
=0.29AW .

9.TheResponsi
vit
yofphot
odi
odei 294AW-1atwav
s0. elengt
hof0.
90μm.Det
ermi
ne
quantum ef
fi
ci
ency.
a)0.405
b)0.914
c)0.654
d)0.249
ViewAnswer

Answer:a
Expl
anati
on:Responsi v
ityofphotodiodei s
R=ηeλ/ hc
η=RXhc/ eλ
=0.294*
6.626*10-34*
3*108/1.602*10-19*
0. 108
90*
=0.405AW-1.

10.Deter
minewavel
engt
hofphot
odi
odehav
ingquant
um ef
fi
ciencyof40%and
-
1
Responsi
vit
yof0.
304AW .
a)0.87μm
b)0.91μm
c)0.88μm
d)0.94μm
ViewAnswer

Answer:d
Expl
anati
on:TheResponsi vi
tyofphot
odiodei
s
R=ηeλ/ hc
λ=Rhc/ηe
=0.304*
6.626*10-34*
3*108/
0.4*1. 10-19
602*
=0.94μm.

11.Determi
newav
elengt
hatwhi
chphot
odi
odei
soper
ati
ngi
fener
gyofphot
onsi
s
-19
1.9*
10 J?
a)2.33
b)1.48
c)1.04
d)3.91
ViewAnswer

Answer:c
Expl
anation: Todeterminewav el
engt
h,
λ=hc/ t
=6.626*10-34* 108/
3* 1.9*10-19
=1.04μm.

12.Determi netheener
gyofphot
onsi
nci
dentonaphot
odi
odei
fitoper
atesata
wavelengthof1. 36μm.
a)1.22*10-34J
b)1.46*10-19J
c)6.45*10-34J
d)3.12*109J
ViewAnswer

Answer:b
Expl
anation: Thewavel
engthofphot
odi
odei
sgi
venby
λ=hc/ t
E=hc/ λ
=6.626*10-34* 108/
3* 1. 10-6
36*
-19
=1.46*10 J.

13.Deter
mineResponsi
vi
tyofphot
odi
odehav
ingo/
ppowerof3.
55μm andphot
o
curr
entof2.
9μm.
a)0.451
b)0.367
c)0.982
d)0.816
ViewAnswer

Answer :d
Expl
anat i
on:TheResponsi
vi
tyofphot
odi
odei
s
R=I p/Po
=2.9*10-6/
3. 10-6
55*
=0.816A/ W.

14.Det er
mineinci
dentopt
ical
poweronaphot
odi
odei
fithasphot
ocur
rentof2.
1μA
andr esponsi
vi
tyof0.55A/W.
a)4.15
b)1.75
c)3.81
d)8.47
ViewAnswer

Answer :c
Expl
anat i
on:TheResponsi
vi
tyofphot
odi
odei
s
R=I p/Po
Po=I p/R
=2.1*10-6/
0.55
=3.81μm.

15.I
faphotodi
oder
equi
resi
nci
dentopt
ical
powerof0.
70A/
W.Det
ermi
nephot
ocur
rent
.
a)1.482
b)2.457
c)4.124
d)3.199
ViewAnswer

Answer:b
Expl
anati
on:TheResponsi
vi
tyofphot
odi
odei
sgi
venby
R=I p/
Po
I
p=R* Po
=0.70*3. 10-6
51*
=2.457μm

ThissetofOpti
calCommunicat
ionsMultipl
eChoi
ceQuest
ions&Answer
sfocuseson
“Semiconduct
orPhotodi
odesWithoutI
nternal
Gai
n”.

1.Thewidthofdeplet
ionregi
onisdependenton___
___
___
__ofsemi
conduct
or.
a)Dopingconcent
rati
onsforappl
iedrever
sebias
b)Dopingconcent
rati
onsforappl
iedfor
war dbi
as
c)Proper
ti
esofmat er
ial
d)Amountofcur
rentpr
ovi
ded
ViewAnswer

Answer:a
Expl
anati
on:Thedeplet
ionregi
onisformedbyimmobi l
epositi
velyandimmobile
negati
vel
ychargeddonorandacceptoratomsinn-andp-typerespect
ivel
y.When
carr
ier
sareswepttowardsmajori
tysideunderel
ectr
icfi
eld,l
owerthedoping,
widert
he
depl
eti
onregion.

2.El
ectron-holepai
rsar
egener
atedi
n__
___
___
___
a)Depleti
onr egi
on
b)Dif
fusionregion
c)Depleti
onr egi
on
d)P-t
yper egion
ViewAnswer

Answer :c
Expl
anat i
on:Photonsareabsorbedinbothdepl
eti
onanddi f
fusi
onregions.Thepositi
on
andwi dthofabsorpti
onr egi
ondependsoninci
dentphotonsener
gy.Theabsor pti
on
regi
onmayext endt hr
oughoutdeviceinweakl
yabsorpti
onofphotons.Thuscar r
ier
sare
generatedinbothregions.

3.Thediffusi
onpr
ocessi
s__
___
___
___
__ascompar
edwi
thdr
if
t.
a)Veryfast
b)Veryslow
c)Negli
gible
d)Bett
er
ViewAnswer

Answer:
b
Expl
anat
ion:
None.

4.Determinedrif
tti
mef orcar
ri
eracr
ossdepleti
onregi
onforphot
odi
odehav
ingi
ntr
insi
c
regi
onwi dthof30μm andelect
rondr
iftv
eloci
tyof105ms-1.
a)1×10-10Seconds
b)2×10-10Seconds
c)3×10-10Seconds
d)4×10-10Seconds
ViewAnswer

Answer :
c
Expl anat
ion:
Thedriftt
imeisgi
venby
-
6
1×10 =3×10-10seconds.
-
10
tdr
it=w/
f vd=30×10 /

5.Det
ermi
neintr
insi
cregionwidt
hforaphot
odi
odehav
ingdr
if
ttmeof4×10-10sand
i
-
10 -
1
el
ectr
onvel
ocit
yof2×10 ms .
a)3×10-5M
b)8×10-5M
c)5×10-5M
d)7×10-5M
ViewAnswer

Answer :b
Expl anati
on:Thedri
ftt
imei
sgi
venby
tdr
it=w/
f v
d
4×10-10=w/ 2×105
=4×10 ×2×105
-
10

=8×10-5m.

6.Det
er mi
nev
eloci
tyofel
ect
roni
fdr
if
tti s2×10-10sandi
mei ntr
insi
cregi
onwi
dthof
-
6
25×10 μm.
5×104
a)12.
5×104
b)11.
5×104
c)14.
5×104
d)13.
ViewAnswer

Answer :a
Expl anati
on:Thedr if
tti
mei sgivenby
tdr
it=w/
f vd
vd=2 5×10-6/
2×10-10=12.5×104ms-1.

7.Comput ejunct
ioncapaci
tancef
orap-
i-
nphot
odi
odei
fithasar 69×10-6m2,
eaof0.
-
13 -
1
permitt
ivi
tyof10.5×10 Fcm andwidt
hof30μm.
a)3.043×10-5
b)2.415×10-7
c)4.641×10-4
d)3.708×10-5
ViewAnswer

Answer:b
Expl
anati
on: Thejuncti
oncapaci
tanceisgivenby
,
-13 -
6 -
13
Cj=εsA/w=10. 5×10 ×0.69×10 /30×10
=2.415×10-7F.

8.Determinet heareawherepermi
tti
vi
tyofmat
eri
ali 5×10-15Fcm-1andwi
s15. dthof
-6
25×10 andj unctioncapaci
tancei
s5pF.
a)8.0645×10-5
b)5.456×10-6
c)3.0405×10-2
d)8.0645×10-3
ViewAnswer
Answer:d
Expl
anati
on: Thejunct
ioncapaci
tanceisgi
venby
,
Cj=εsA/w=5×10-12×25×10-6/ 5×10-15
15.
=8.0645×10-3m2.

9.Comput ei nt
ri
nsi
cregionwidthofp- i-
nphotodiodehavi
ngjuncti
oncapaci
tanceof4pF
andmat eri
al permi
tt
ivi
tyof16.5×10-13Fcm-1andar 55×10-6m2.
eaof0.
a)7.45×10-6
b)2.26×10-7
c)4.64×10-7
d)5.65×10-6
ViewAnswer

Answer:b
Expl
anation:Thej
unctioncapaci t
ancei
sgi
venby
,
Cj=εsA/W
w=εsA/ Cj
=16.5×10-13×0.
55×10-6/
4×10-12
-
7
=2.26×10 .

10.Determi neper
mitti
vi
tyofp-
i-
nphotodi
odewi
thj
unct
ioncapaci
tanceof5pF,
areaof
-
6 2
0.62×10 m andi ntr
insi
cregi
onwidt
hof28μm.
a)7.55×10-12
b)2.25×10-10
c)5×10-9
d)8.5×10-12
ViewAnswer

Answer:b
Expl
anati
on: Thejunct
ioncapacit
anceisgi
venby
,
Cj=εsA/W
εs=Cjw/A=5×10-12×28×10-6/
0.62×10-6
-
10 -
1
=2.25×10 Fcm .

11.Determi neresponset
imeofp-
i-
nphot
odi
odei
fithas3dBbandwi
dt 98×108Hz.
hof1.
a)5.05×10-6sec
b)5.05×10-7Sec
c)5.05×10-7sec
d)5.05×10-8Sec
ViewAnswer

Answer:
c
Expl
anat
ion:Themaximum r
esponseti
meis
Maximum responset
ime=1/Bm =1/ 98×108=5.
1. 05×10-9sec.

12.Comput
emaxi
mum 3dBbandwi
dthofp-
i-
nphot
odi
odei
fithasamaxr
esponse
ti
meof5.8ns.
a)0.12GHz
b)0.14GHz
c)0.17GHz
d)0.13GHz
ViewAnswer

Answer:
c
Expl
anat
ion:Themaximum r
esponset
imei
s
Maximum responset
ime=1/Bm
=1/ 8×10-9=0.
5. 17GHz.

13.Det
erminemaximum responseti
mef
orap-
i-
nphot
odi
odehav
ingwi
dthof28×10-6m
andcarr
iervel
oci
tyof4×104ms-1.
a)105.
67MHz
b)180.
43MHz
c)227.
47MHz
d)250.
65MHz
ViewAnswer

Answer:
c
Expl
anat
ion:
Maximum 3dBbandwi dt
hofphotodi
odei
sgi
venby
Bm =Vd/2ΠW =4×10-4/ 14×28×10-6=227.
2×3. 47MHz.

14.Det
erminecarri
erv
eloci
tyofap-
i-
nphot
odi
odewher
e3dBbandwi
dthi 9×108Hz
s1.
anddepl
etionregi
onwidthof24μm.
43×10-5
a)93.
55×10-3
b)29.
56×10-3
c)41.
3×10-4
d)65.
ViewAnswer

Answer:b
Expl
anati
on: Maxi
mum 3dBbandwi
dthofphot
odi
odei
sgi
venby
Bm =Vd/2ΠW
Vd=Bm ×2Π×W
=1.98×108×2Π×24×10-6
=29.55×10-3.

15.Comput edepl
eti
onregi
onwidthofap-i
-nphot
odi
odewi
th3dBbandwi
dthof
8 4 -
s
1.91×10andcar ri
ervel
ocit
yof2×10ms .
a)1.66×10-5
b)3.2×10-3
c)2×10-5
d)2.34×104
ViewAnswer
Answer:a
Expl
anation: Maximum 3dBbandwi
dthofphot
odi
odei
sgi
venby
Bm =Vd/2ΠW
W =Vd/Bm2Π
=2×10-5/
1. 91×108×2Π
-
5
=1.66×10 m

ThissetofOpti
calCommunicati
onsMulti
pleChoiceQuest
ions&Answer
s(MCQs)
focuseson“Semiconduct
orPhotodi
odesWithInt
ernalGai
n”.

1.____
_ _
_____hasmoresophi
sti
cat
edst
ruct
uret
hanp-
i-
nphot
odi
ode.
a)Avalanchephotodi
ode
b)p-njuncti
ondiode
c)Zenerdiode
d)Varactordiode
ViewAnswer

Answer:
a
Expl
anat
ion:Aval
anchephotodi
odeissecondmajort
ypeofdetectori
nopt
ical
communicati
ons.Thi
sdiodeismoresophist
icat
edsoastocreateamuchhigher
el
ectr
icfi
eldregi
on.

2.Thephenomenonl eadi
ngt
oav
alanchebr
eakdowni
nrev
erse-
biaseddi
odesi
sknown
as______
_
a)Augerrecombinat
ion
b)Modehoppi ng
c)Impactioni
zat
ion
d)Extr
actioni
zati
on
ViewAnswer

Answer:c
Expl
anati
on:I
ndeplet
ionr
egi
on,almostal l
photonsareabsor
bedandcarri
erpai
rsar
e
gener
ated.Sother
ecomesahighf i
eldregionwherecar
ri
ersacqui
reener
gytoexci
te
newcarri
erpai
rs.Thi
sisi
mpactionizat
ion.

3.___
__ _
_i sf
ullydepl
etedbyempl
oyi
ngel
ect
ri
cfi
elds.
a)Avalanchephot odi
ode
b)P-I
-Ndi ode
c)Varactordiode
d)P-ndiode
ViewAnswer

Answer:a
Expl
anati
on:
APDisful
lydepletedbyel
ectr
icf
iel
dsmor han104V/
et m.Thi
scausesal
l
thedr
if
ti
ngofcar
ri
ersatsaturatedl
i
mitedvel
oci
ti
es.
4.Atlowgain,t
hetr
ansi
tti
meandRCef
fect
s__
___
___
a)Arenegli
gibl
e
b)Areveryl
ess
c)Dominate
d)Reducegradual
l
y
ViewAnswer

Answer:c
Expl
anati
on:Lowgaincausest
hedominanceoftr
ansitt
imeandRCef f
ect
s.Thi
sgi
ves
adefi
nit
iver
esponseti
meandt husdev
iceobt
ainsconst
antbandwi
dth.

5.Athighgain,av
alanchebui
l
dupt
ime_
___
___
_
a)Isnegli
gibl
e
b)Veryless
c)Incr
easesgraduall
y
d)Domi nat
es
ViewAnswer

Answer:d
Expl
anati
on:Highgai
ncausesaval
anchebui
l
dupt
imet
odomi
nat
e.Thust
hebandwi
dth
ofdevi
cedecreasesasi
ncreasei
ngain.

6.Often_______
___pul
seshapei
sobt
ainedf
rom APD.
a)Negligi
ble
b)Distort
ed
c)Asy mmet r
ic
d)Symmet r
ic
ViewAnswer

Answer:
c
Expl
anat
ion:
Asy mmetri
cpul
seshapei
sacquiredf
rom APD.Thisi
sduet
orelati
vel
yfast
ri
seti
measel ect
ronsar
ecol
lect
edandfal
lti
medictat
edbytransi
tti
meofholes.

7.Fallt
imesof1nsormor
ear
ecommon.
a)False
b)True
ViewAnswer

Answer :
b
Explanat
ion:
Theuseofsuit
abl
emater
ial
sandst
ruct
uresgi
veri
seti
mesbetween150
and200ps.Thusf al
lti
mesof1nsormorear
ecommonwhi chi
nturnl
i
mitstheover
all
responseofdev
ice.

8.Det
ermi
neResponsi
vi
tyofasi
l
iconRAPDwi
th80%ef
fi
ciency
,0.
7μm wav
elengt
h.
a)0.
459
b)0.
7
c)0.312
d)0.42
ViewAnswer

Answer:
a
Expl
anat
ion:
TheResponsiv
ityofaRAPDi
sgivenby-
R=ηeλ/hcA/wwhere,η=eff
ici
ency
,λ=wavel
ength,
h=Pl
anck’
sconst
ant
.

9.Computewav
elengt
hofRAPDwi
th70%ef
fi
ciencyandResponsi
vi
tyof0.
689A/
w.
a)6μm
b)7.21μm
c)0.112μm
d)3μm
ViewAnswer

Answer:
c
Expl
anat
ion:Thewavel
engt
hcanbef oundf
rom t
heResponsi
vi
tyf
ormul
agi
venby
-
R=ηeλ/hc.Theuni
tofwavelengt
hisμm.

10.Computephot
ocur
rentofRAPDhav
ingopt
ical
powerof0.
7μwandr
esponsi
vi
tyof
0.689A/W.
a)0.23μA
b)0.489μA
c)0.123μA
d)9μA
ViewAnswer

Answer :
b
Explanat
ion:Thephot
ocur
renti
sgi
venby
IP=P0R.Her
eIP=phot
ocur
rent
,P0=Power
,R=
responsi
vit
y.

11.Deter
mineopt
ical
powerofRAPDwi
thphot
ocur
rentof0.
396μAandr
esponsi
vi
tyof
0.49A/w.
a)0.91μW
b)0.32μW
c)0.312μW
d)0.80μW
ViewAnswer

Answer:d
Expl
anati
on:Thephot
ocur
renti
sgi
venbyI
P=P0R.Her
eIP=phot
ocur
rent
,P0=Power
,R
=responsi
vi
ty.
P0=IP/Rgivest
heopti
cal
power.

12.Deter
minet
heResponsi
vi
tyofopt
ical
powerof0.
4μW andphot
ocur
rentof0.
294μA.
a)0.735
b)0.54
c)0.56
d)0.21
ViewAnswer

Answer:a
Expl
anati
on:Thephotocur
rentisgi
venbyI
P=P0R.Her
eIP=phot
ocur
rent
,P0=Power
,R
=responsi
vi
ty.
R=I P/
P0givest
heresponsivi
ty.

13.Comput emult
ipl
i
cati
onf
act
orofRAPDwi
thout
putcur
rentof10μAand
photocur
rentof0.
369μA.
a)25.32
b)27.100
c)43
d)22.2
ViewAnswer

Answer:b
Expl
anation:
Themulti
pli
cat
ionfactorofphotodiodei
sgi
venby
-
M =I/
IP whereI=out
putcur
rent
, I
P =photocurr
en t
.

14.Deter
mi net
heoutputcur
rentofRAPDhav
ingmul
ti
pli
cat
ionf
act
orof39and
photocur
rentof0.
469μA.
a)17.21
b)10.32
c)12.21
d)18.29
ViewAnswer

Answer:
d
Expl
anat
ion:
Themulti
pli
cat
ionf
actorofphotodiodeisgi
venby-
M =I/
IPwhereI=out
putcur
rent
,IP=photocurr
ent.I=M*IPgi
vestheout
putcur
renti
nμA.

15.Computethephot
ocur
rentofRAPDhav
ingmul
ti
pli
cat
ionf
act
orof36.
7andout
put
curr
entof7μA.
a)0.01μA
b)0.07μA
c)0.54μA
d)0.9μA
ViewAnswer

Answer:a
Expl
anation:
Themulti
pli
cat
ionfactorofphotodiodei sgivenby-
M =I/
IP whereI=out
putcur
rent
, I
P =photocurr
en t
.IP =I/
M Gi
vestheout
putcur
renti
nμA.
ThissetofOpt
icalCommuni
cati
onsMulti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Mi
dI nf
rar
edandFarI
nfr
aredPhotodi
odes”
.

1.Int hedev el
opmentofphot
odiodesf
ormid-
inf
rar
edandfar
-i
nfr
aredt
ransmissi
on
systems, latti
cemat
chinghasbeenaprobl
em whenoper
ati
ngatwavel
engths
____________
a)1µm
b)Gr eaterthan2µm
c)2µm
d)0.5µm
ViewAnswer

Answer:b
Expl
anati
on:Latt
icematchi
ngforal
loymat
eri
alsi
sobt
ainedatwav
elengt
hsabove2µm.
Forexample,al
atti
ce-
matchedall
oymater
ial
syst
em (
GaSb)wasuti
li
zedinap-
i-
n
photodi
odeforhighspeedoper
ati
onatwavel
engt
hsupto2.3µm.

2.Whati sgeneral
lyusedt
oaccommodat
eal
att
icemi
smat
ch?
a)All
oy s
b)Attenuator
c)Gradedbuf f
erlayer
d)APDar ray
ViewAnswer

Answer:
c
Expl
anat
ion:Theuseofindi
um al
l
oycauseinherentpr
oblemsofdislocat
ion-
induced
j
uncti
onleakageandlowquant
um ef
fi
ciency.Toavoidthesepr
oblems, a
composit
ional
lygr
adedbuff
erl
ayeri
susedt oaccommodat ealat
ticemismat ch.

3.HgCdTemater
ial
syst
em i
sut
il
izedt
ofabr
icat
elong-
wav
elengt
hphot
odi
odes.
a)True
b)False
ViewAnswer

Answer:
a
Expl
anat
ion:
HgCdTef amilyal
l
oy sal
lowresonantchar
act
eri
sti
csviaholei
onizat
ion.I
ts
bandgapenergyvar
iati
onenablesopti
caldet
ecti
ontofar
-i
nfr
ared.Thus,t
hismateri
al
canbeusedforfabr
icat
ionoflong-
wavelengt
hphotodi
odes.

4.Avalanchephot odi
odesbasedonHgCdTear
eusedf
or_
___
___
___
___
_inbot
hthenear
andf arinfrar
ed.
a)Disper sion
b)Dislocat i
on
c)Ionization
d)Arrayappl icat
ions
ViewAnswer
Answer:d
Expl
anation:Aval
anchephot
odi
odesbasedonHgCdTeareusedforar
rayappl
icat
ions.
Themat eri
alsofAPDsbasedonHgCdTepossessuni
for
m aval
anchegai
nacrossan
arr
ay.Thisvari
ati
oningai
nisvar
iat
ioni
ngaini
sloweri
nHgCdTeascompar edwith
si
li
con.

5.Thedet ectionmechani sm in___

___
____
__r
eli
esonphot
oexci
tat
ionofel
ect
ronsf
rom
confi
nedst at esinconduct i
onbandquant
um wel
ls.
a)p-i
-ndet ector
b)Quantum- dotphotodet ector
c)p-nphot odi ode
d)Avalanchephot odi
odes
ViewAnswer

Answer :b
Explanati
on:Quant
um- dotphotodetector’
sdetecti
onmechani sm i
nvolvesphot
o
excit
ationofel
ectr
ons.Thisprocessofphot oex ci
tat
ioninphotodetect
orsissi
mil
art
o
thatintheQuantum-dotsemiconductoropticalampli
fier
.Thedots-
in-welli
nQuant
um-
dotdetectori
scall
edasDWELLst ructure.

6.Whendet ermini
ngperformanceofaphot
odet
ect
or_
___
___
___
_isof
tenused.
a)No.ofincidentphoton
b)No.ofelectronscol
lected
c)Responsivit
y
d)Absorpti
oncoef f
ici
ent
ViewAnswer

Answer:c
Expl
anati
on:Theexpressi
onforquant
um ef
fi
ciencydoesnotincl
udephotonener
gy.
Thusforchar
acter
izi
ngperfor
manceofphotodetector
,Responsi
vit
yisused.

7.Theimportantpar
ameterf
orexci
ti
nganel
ect
ronwi
thener
gyr
equi
redf
rom v
alence
bandtoconductionbandi
s?
a)Wavelength
b)Absorpti
oncoeffi
ci
ent
c)Responsivi
ty
d)Bandgapener gy
ViewAnswer

Answer:a
Expl
anati
on:Aswavelengt
hofi
ncidentphotonbecomeslonger,
thephot
onenergyi
s
l
essthanenergyr
equiredt
oexci
teelect
ron.Mostlypar
ametersofphot
odiodear
e
dependentonwavel
ength.

8.__
____
___
_isl
essthanoruni
tyf
orphot
odet
ect
ors.
a)Absor
pti
oncoef
fi
cient
b)Bandgapener gy
c)Responsi
vit
y
d)Quantum ef
fici
ency
ViewAnswer

Answer :d
Explanati
on:Quantum eff
ici
encydet
erminestheabsor
pti
oncoef f
ici
entof
semi conductormater
ial
ofphotodetect
or.I
tisnotal
li
ncidentphotonsar
eabsor
bedt
o
createelectr
on-hol
epair
s.Thusquantum ef
fi
ciencymustbelessthanuni
ty.

9.Theremustbei mprov
ementi
n__
___
___
__ofanopt
ical
fibercommuni
cat
ionsy
stem.
a)Detector
b)Responsivi
ty
c)Absorpti
onCoeffi
ci
ent
d)Bandgapener gy
ViewAnswer

Answer :
a
Explanat
ion:I
fproperandimpr
ovedandhi
ghl
yeff
ici
entdet
ect
orisuti
li
zed,
itwi
l
lthen
reducetherepeatedst
ati
ons.I
twil
lal
sol
owerdownbothcapi
tal
invest
mentand
maintenancecost.

Thi
ssetofOpti
cal
Communicati
onsonli
netestf
ocuseson“
Phot
otr
ansi
stor
sandMet
al
–Semiconduct
or–Met
alPhotodet
ector
s”.

1.The__ _
_____
____ _isphotosensi
ti
vetoactasli
ghtgat
her
ingel
ement
.
a)Base-emitt
erjunction
b)Base-coll
ect
orj uncti
on
c)Coll
ector-
emitterjuncti
on
d)Base-coll
ect
orj uncti
onandBase- emi
tt
erjunct
ion
ViewAnswer

Answer:a
Expl
anati
on:Base-
coll
ect
orjuncti
onisphotosensi
ti
veinn-p-
nphototr
ansist
orandact
asli
ghtgather
ingel
ement.Thisl
ightabsor
bedaf f
ectsthebasecur
rentandgives
mult
ipl
icat
ionofpri
maryphotocurr
entindevi
ce.

2.Alargesecondarycur
rent___
___
___
___
___
__i
nn-
p-nI
nGaAsphot
otr
ansi
stori
s
achi
ev ed.
a)Betweenbaseandcol l
ector
b)Betweenemi t
terandcoll
ect
or
c)Betweenbaseandemi tt
er
d)Plasma
ViewAnswer

Answer
:b
Expl
anat
ion:Thephoto-
gener
atedhol
esareswepttot
hebase.Thi
sincreasest
he
for
wardbiasdevi
ce.Thi
sgenerat
essecondar
ycurr
entbet
weenemitterandcol
lect
or.

3.____
__ _emitt
er-
baseandcol
lect
or-basej
uncti
oncapaci
tancesi
sachi
evedbyuseof
heter
o-struct
urealongwi
th___
_____
_baseresist
ance.
a)Low, high
b)High,low
c)Low, l
ow
d)High,negli
gibl
e
ViewAnswer

Answer:c
Expl
anati
on:
Inheter
o-st
ruct
ure,
therei
slowdopi ngleveli
nemitt
erandcoll
ect
orwhich
i
scoupledwit
hheavydopingbase.Thi
sisduel owemi tt
er-
baseandcoll
ect
or-
base
j
uncti
oncapaci
tanceandlowbaseresi
stance.Thisall
owslargecur
rentgai
n.

4.A_ __
__ __
_iscr eatedbyhet
ero-
junct
ionatcol
l
ect
or-
basej
unct
ion.
a)Potentialbarr
ier
b)Depletionregi
on
c)Parasiti
ccapaci tance
d)Inductance
ViewAnswer

Answer:a
Expl
anati
on:Pot
enti
albarri
eri
screatedatemit
ter
-basej
unct
ionbyhet
ero-
junct
ion.Thi
s
el
iminat
esholej
uncti
onf r
om base.Thi
sisachi
evedwhenjuncti
oni
sforward-
biased
andprovi
desgoodemitter-
baseeff
ici
ency.

5.Phot otr
ansist
orsbasedonhet
ero-
junct
ionusi
ng_
___
___
__mat
eri
alar
eknownas
wav eguidephototr
ansi
stor
s.
a)InGaP
b)InGaAs
c)InGaAsP/I nAlAs
d)Er GaAs
ViewAnswer

Answer:c
Expl
anation:Photot
ransi
storusingInGaAsP/InAlAsareknownaswav eguide
photot
ransist
ors.Theyfuncti
onaswav egui
dephotot
ransi
stors.Theyfunct
ionashigh
perf
ormancephot o-det
ector
sat1. 3micro-meterwavel
ength.Theyuti
l
izeapassiv
e
waveguidelayerunderacti
vetransi
storregi
on.

6.Aphot
otransi
storhascol
l
ectorcurr
entof18mA, i
nci
dentopt
ical
powerof128μW
wit
hawav el
engthof1.24μm.Determineanopt
ical
gain.
a)1.
407*102
b)19.
407*102
c)2. 102
407*
d)3. 102
407*
ViewAnswer

Answer :a
Explanati
on:Theopti
calgai
nisgi
venby-
G0=hcIc/
λeP0,wher
eh=Planck’
sconst
ant
,Ic=col
l
ect
orcur
rent
,λ=wav
elengt
h,
P0=i
ncidentopti
calpower.

7.Foraphotot
ransi
storhavi
nggainof116.
5,wav
elengt
hof1.
28μm,
opt
ical
power
123μW.Determinecoll
ect
orcur
rent.
a)0.123mA
b)0.0149mA
c)1.23mA
d)0.54mA
ViewAnswer

Answer:
b
Expl
anat
ion:Thecoll
ectorcurr
enti
sgivenby-
I
c=G0λeP0/hc,whereh=Planck’
sconst
ant,I
c=col
l
ect
orcur
rent
,λ=wav
elengt
h,
P0=i
nci
dentopti
calpower.

8.Thedet ect
ionmechani
sm i
nthe_
___
___
___
__phot
o-det
ect
ori
ncl
udesi
ntersub-
band
tr
ansit
ions.
a)Dwel l
b)Set
c)Avalanche
d)Futi
le
ViewAnswer

Answer:
a
Expl
anat
ion:
Thei ntersub-
bandtransit
ionsarealsoknownast y
pe-2t
ransi
ti
ons.I
t
compri
sesofmi ni-
bandswithi
nasi ngl
eener gyband,Thedet
ecti
onmechanism i
n
DWELLphoto-detectori
ncl
udesintersub-bandtransi
ti
ons.

9.Whi chofthefoll
owi ngi
sthedi
ff
erencebet
weent
hen-
p-nandconv
ent
ional
bipol
ar
tr
ansistor?
a)Electri
cproperty
b)Magnet icproperty
c)Unconnect edbase
d)Emi tt
erbaseef f
ici
ency
ViewAnswer

Answer:c
Expl
anati
on:Then-p-
nbipol
art
ransi
stordi
ff
ersinthefol
l
owi
ngways:baseis
unconnect
ed,base-
col
lect
orj
uncti
onisphotosensi
ti
veasal
i
ghtgat
heringel
ement
.
10.Then-p-nhetero-j
uncti
onphot
otr
ansi
stori
sgr
ownusi
ng_
___
___
___
___
_
a)Liqui
d-phasetranquil
i
zers
b)Liqui
d-phaseepistaxi
s
c)Soli
dsubst r
ate
d)Heteropoleax
ViewAnswer

Answer:
b
Expl
anat
ion:
Thetechni
queLPEconsistsofathi
nlayerofn-t
ypecoll
ectorbasedonap-
ty
pebaselayer
.Li
quidphaseepi
staxi
sisusedinhet
ero-j
uncti
ontechnology.

11.The_ _
_____
_ _
___
_atemi
tt
er-
basej
unct
iongi
vesgoodemi
tt
erbasei
nject
ion
effi
ciency.
a)Homo- j
uncti
on
b)Depl eti
onlayer
c)Hol es
d)Het ero-
junct
ion
ViewAnswer

Answer :d
Explanati
on:Theheter
o-j
unct
ionattheemi
tter-
basej
unct
ioneff
ect
ivel
yel
i
minat
eshole
i
njecti
onf r
om thebasewhenthejuncti
oni
sf or
wardbi
ased.Thi
sgi
vesgoodemit
ter
-
baseinject
ioneff
ici
ency.

12.Wavegui dephototransi
stor
sut
il
izea_
___
___
___
_wav
egui
del
ayerundert
he
____
____
_t ransist
orregion.
a)Acti
ve,passiv e
b)Passi
ve, acti
v e
c)Homo, het er
o
d)Heter
o, homo
ViewAnswer

Answer :b
Explanati
on:Wav
eguidephotot
ransi
stor
sarebasedonhet
er o-
junct
ionst
ruct
ure.They
functi
onashigh-
perf
ormancephoto-det
ect
orsandthusut
il
izeapassivewaveguide
l
ay erundert
heacti
vetr
ansist
orregi
on.

13.Whati sthemai nbenefi

toft hewavegui
dest
ruct
ureov
erconv
ent
ional
het
ero-
j
unctionphot otr
ansistor?
a)Highdepl eti
onr egi
on
b)Depl et
ionwidth
c)Increasedphot ocurrent
,responsi
vi
ty
d)Lowgai n
ViewAnswer

Answer
:c
Expl
anati
on:Wavegui
destr
uctureof
fer
sincreasedphot
ocurr
ent.Photocurr
enti
s
di
rect
lypropor
ti
onalt
otheresponsi
vi
ty;
thusinturni
ncr
easesresponsivi
ty.

14.Wav egui
dest
ruct
urepr
ovi
deshi
ghquant
um ef
fi
ciency
.
a)True
b)False
ViewAnswer

Answer:b
Expl
anation:Responsi
vit
yandquantum ef
fi
ciencyf
oll
owadiff
erentpath.Theyare
i
ndirect
lyproport
ional
toeachother
.Thus,i
nwav egui
dest
ruct
ure,astheresponsi
vit
y
i
ncreases,quantum ef
fi
ciencyr
emainsl
ow.

15.Metal-
semi
conduct
or-
met
al(
MSM)phot
o-det
ect
orsar
ephot
oconduct
ivedet
ect
ors.
a)True
b)False
ViewAnswer

Answer:a
Expl
anati
on:MSM phot
o-det
ector
sarethesi
mplestofphot
o-detect
ors.I
tpr
ovi
dest
he
si
mplestfor
m ofphot
o-det
ecti
onwit
hinopti
cal
fibercommunicati
onsandare
phot
oconducti
ve.

7.Quest
ions&Answer
sonDi
rectDet
ect
ionRecei
verPer
for
manceConsi
der
ati
ons

Thesect
ioncontai
nsquest
ionsandanswer
sonnoi
se,
recei
vernoi
seandst
ruct
ures,
fet
preampl
ifi
ersandhighper
formancer
ecei
ver
s.

ThissetofOpti
calCommuni
cat
ionsMul
ti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Noise”
.

1.______
___ __
__r
eferst
oanyspuri
ousorundesi
reddi
stur
bancest
hatmaskt
her
ecei
ved
si
gnal i
nacommuni cat
ionsy
stem.
a)Attenuation
b)Noise
c)Dispersion
d)Bandwi dth
ViewAnswer

Answer :
b
Explanat
ion:Noi
seisanunwant edandundesirablequanti
ty.I
taff
ect
stherecei
ved
signali
nacommuni cati
onsy st
em.Inoptical
fibercommuni cat
ionsy
stems,noi
seisdue
tothespontaneousfl
uctuat
ionsrat
herthanerrati
cdistur
bances.

2.Howmanyt
ypesofnoi
sear
eobser
vedbecauseoft
hespont
aneousf
luct
uat
ionsi
n
opti
calf
ibercommuni
cat
ionsy
stems?
a)One
b)Four
c)Two
d)Three
ViewAnswer

Answer:d
Expl
anati
on:Ther
ear ethr
eety
pesofnoisebecauseofthespont
aneousfl
uctuati
onsin
opti
calf
ibercommunicati
onsyst
ems.Thesearethermalnoi
se,t
hedarkcurr
entnoise
andquantum noi
se.Thesenoi
setypesarenotcausedbytheel
ectr
oni
cinter
ference.

3.___
_______
____iscausedduet
ot her
malint
eract
ionbet
weent
hef
reeel
ect
ronsand
thevi
brati
ngionsintheconduct
ionmedium.
a)Thermalnoise
b)Darknoise
c)Quantum noise
d)Gaussiannoise
ViewAnswer

Answer :
a
Explanat
ion:Thermalnoiseisbasical
lyaspontaneousfluctuat
ioncauseddueto
thermalinter
acti
onofelectronsandions.I
tisespecial
lyprevalenti
nresi
stor
satroom
temperature.Ther
mal noiseismeasuredintheform ofcurrentandiscal
ledast
hermal
noisecurrent.

4.Asmal l
leakagecur
rentst
il
lfl
owsfrom t
hedev
icet
ermi
nal
sev
eni
fther
eisnoopt
ical
powerinci
dentonthephotodetect
or.
a)True
b)False
ViewAnswer

Answer :
a
Explanat
ion:Arever
seleakagecurr
entthatf
lowsfrom thedev i
ceterminal
siscall
edas
darkcurrent
.Thisdarkcur
rentcont
ribut
estothetotal
sy st
em noise.Thisgi
vesrandom
fl
uctuati
onsabouttheaveragepart
iclef
lowofthephotocurrent.

5._____
______dist
ri
buti
onpr
ovi
dest
hedescr
ipt
iont
her
andom st
ati
sti
csofl
i
ghtemi
tt
ed
i
nblackbodyr adi
ati
on.
a)Poisson
b)Cumul ati
ve
c)Probabili
ty
d)Bose-Einstei
n
ViewAnswer

Answer
:d
Expl
anati
on:Incoherentli
ghtisemi
ttedbyindependentat
omsandt heref
oret
hereisno
phaserel
ati
onshipbet weentheemittedphot
ons.Theproper
tydictatesanexponenti
al
i
ntensi
tydi
stribut
ionwhichisident
icaltoBose-
Einst
eindi
str
ibut
ion.

6.Theprobabil
i
tyofzer
opai
rsbeinggener
atedwhenal
i
ghtpul
sei
spr
esenti
sgi
venby
whichofthefol
lowi
ngequat
ion?
a)P(0/1)=exp(-
Zm)
b)P(x)=exp(Zm)
c)P(y)=x(0)+x(1)
d)P(z)=P(-
Zm)
ViewAnswer

Answer :a
Explanati
on:Thepr obabil
i
tyofzer
opair
sbeinggeneratedwhenal i
ghtpul
seispr
esent
i
sgi venbyequat i
on–
P( 0/1)=exp(-Zm)
Wher e,P(0/1)repr
esentsthesyst
em er
rorprobabi
l
ityp(e)andZm i
svari
anceoft
he
probabil
it
ydistri
bution.

7.Themi nimum pulseener

gyneededt
omaintai
nagivenbi
t-
err
or-
rat
e(BER)whi
chany
pract
icalr eceiv
ermustsati
sfyi
sknownas_
_ _
_ _
___
___
a)Minimal energy
b)Quant um l i
mit
c)Pointofr eversed
d)Binarysi gnali
ng
ViewAnswer

Answer:b
Expl
anation:
Aperfectphotodetect
oremi tsnoel
ect
ron-holepair
sintheabsenceof
i
ll
uminati
on.Theerrorprobabi
l
itydeterminesast
andardizedfundamental
li
mitindi
git
al
opti
calcommunicati
ons.Thisli
mitistermedasquantum limi
t.

8.Adigit
alopt
icalf
ibercommuni
cati
onsy
stem r
equi
resamaxi
mum bit
-er
ror
-r
ateof10-
9
.Fi
ndtheaveragenumberofphot
onsdet
ectedi
natimeper
iodforagi
venBER.
a)19.7
b)21.2
c)20.7
d)26.2
ViewAnswer

Answer :c
Explanati
on: Theprobabil
it
yoferr
orisgivenby-
P(e)=exp( -Zm)
Wher e,Zm =No.ofphot ons
HereP( e)=10-9,t
hereforeZm i
scal
culat
edf r
om abov
erel
ati
on.
9.Foragi venopt
ical
fibercommunicat
ionsy
stem,P(e)=10-9,
Zm =20.
7, 9×1014,
f=2. η
=1.Findt hemini
mum pul seener
gyorquant
um l
imit
.
a)3.9×10-18
b)4.2×10-18
c)6.2×10-14
d)7.2×10-14
ViewAnswer

Answer :a
Explanati
on: Themini
mum pulseener
gyorquant
um l
i
miti
sgi
venby–
Emin=Zmhf /η
Wher e,Zm =Numberofphotons
h=Pl anck’sconstant
f=f r
equency
η=Quant um eff
ici
ency.

10.Ananal ogopt
icalf
ibersystem oper
atingatwavel
ength1μmhasapost-det
ect
ion
bandwidthof5MHz.Assumi ngani dealdetect
orandi
ncidentpowerof198nW,
calcul
atetheSNR( f=2.99×1014Hz).
a)46
b)40
c)50
d)52
ViewAnswer

Answer:c
Expl
anati
on:TheSNRisgivenby–
S/N=ηP0/2hfB
Where,η=1( f
ori
dealdet
ector
)
P0=inci
dentpower
h=Planck’
sconstant
B=Bandwi dt
h.

11.Theinci
dentopt
ical
powerr
equi
redt
oachi
eveadesi
rabl
eSNRi
s168.
2nW.Whati
s
theval
ueofinci
dentpoweri
ndBm?
a)-37.
7dBm
b)-37dBm
c)–34dBm
d)-38.
2dBm
ViewAnswer

Answer:a
Expl
anati
on:Incidentpowerindenot
edbyP0.I
tisgi
venby–
P0=10log10(
P0(watts)
)
WhereP0(watts)=incidentpoweri
nWatt
s/mil
li
Watt
.
12.I
ntheequat
iongi
venbel
ow,
whatdoesτst
andsf
or?

Zm =ηP0τ/
hf

a)Velocit
y
b)Time
c)Reflect
ion
d)Refracti
veindex
ViewAnswer

Answer:b
Expl
anati
on:Inthegi
venequat ion,
Zm ist
hevari
anceoftheprobabi
li
tydi
str
ibut
ion.The
numberofelectr
onsgeneratedi nt
imeτisequaltotheaver
ageofthenumberof
phot
onsdetectedovert
hist i
meper iodZm.Hence,τist
hetimeandP0istheincident
power,
ηisthequantum ef
ficiencyandfisthefr
equency.

ThissetofOpti
calCommunicat
ionsMul
ti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Recei
verNoi
se”
.

1.Whicharet hetwomainsourcesofnoisei
nphot
odi
odeswi
thouti
nter
nal
gai
n?
a)Gaussiannoiseanddarkcurrentnoi
se
b)Int
ernalnoiseandext
ernalnoise
c)Darkcurrentnoise&Quant
um noi se
d)GaussiannoiseandQuantum noise
ViewAnswer

Answer :
c
Explanat
ion:Thetwomainsour
cesofnoiseinphotodiodeswi
thouti
nter
nal
gai
nar
e
darkcurrentnoi
seandquant
um noi
se.Theyareregardedasshotnoi
seonthe
photocurrent
.Thesenoi
sear
etoget
hercall
edasanal ogquant
um noise.

2.Thedomi nat
ingef
fectofthermalnoiseov
ertheshotnoi
sei
nphot
odiodeswi
thout
i
nternalgai
ncanbeobser v
edi nwidebandsyst
emsoperati
ngi
nther
angeof___
_____
a)0.4to0.5μm
b)0.8to0.9μm
c)0.3to0.4μm
d)0.7to0.79μm
ViewAnswer

Answer:b
Expl
anation:
Whent hephotodiodeiswithouti
nter
nal
av alanchegai
n,thedet
ect
orload
resi
storandacti
veelements’t
her malnoisei
ntheampli
fiertendstodominat
e.I
tisseen
i
nwi debandsystemsoperati
ngint he0.8to0.9μmwavelengthband.Thisi
sbecause
thedarkcurr
entsinthesi
li
condi odescanbemadev erysmal l.

3.Asi
l
iconp-
i-
nphot
odi
odei
ncor
por
atedi
nanopt
ical
recei
verhasf
oll
owi
ng
par
amet
ers:

Quantum ef f
ici
ency=70%
Wav el
ength=0. 8μm
Darkcurrent=3nA
Loadresistance=4kΩ
Inci
dentopt i
calpower=150nW.
Bandwidth=5MHz

Computethephot
ocur
renti
nthedev
ice.
a)67.
7nA
b)81.
2nA
c)68.
35nA
d)46.
1nA
ViewAnswer

Answer:a
Expl
anation:Thephotocurr
enti
sgi
venby
I
p =ηP0eλ/hc
Whereη=Quant um eff
ici
ency
P0=Incidentopti
calpower
e=electroncharge
λ=Wav elength
h=Planck’sconstant
c=Velocityofli
ght.

4.Inasil
i
conp- i
-nphot
odiode,
ifl
oadresi
stancei
s4kΩ,t
emperat
urei
s293K,
bandwidt
hi s4MHz, fi
ndthethermal
noiseinthel
oadr
esi
stor
.
a)1.8×10-16A2
b)1.23×10-17A2
c)1.65×10-16A2
d)1.61×10-17A2
ViewAnswer

Answer:
d
Expl
anat
ion:Thethermalnoi
sei
nthel
oadr
esi
stori
sgi
venby–
2
i
t =4KTB/RL
WhereT=Temper ature
B=Bandwi dt
h
RL=Loadresist
ance.

5.___
______
_ _
_____isacombi
nat
ionofshuntcapaci
tancesandr
esi
stances.
a)Att
enuation
b)Shuntimpedance
c)Shuntadmi t
tance
d)Thermalcapacitance
ViewAnswer
Answer :c
Explanation:
Admit
tanceisameasur
eofhoweasi
lyacir
cuitwil
lal
l
owacurrentt
ofl
ow.
Iti
st heinver
seofi
mpedanceandismeasur
edinSiemens.I
tisacombi
nat
ionofshunt
capacitancesandr
esist
ances.

6._____
_____
____i
susedinthespeci
fi
cat
ionofopt
ical
det
ect
ors.
a)Noiseequival
entpower
b)Polari
zati
on
c)Sensiti
vi
ty
d)Elect
ronmov ement
ViewAnswer

Answer :a
Explanati
on:Noiseequiv
alentpowerisdef
inedastheamountofinci
dentopt
icalpower
perunitbandwidthrequi
redtoproduceanoutputpowerequal
todetect
oroutputnoi
se
power .
Noiseequival
entpowerist heval
ueofinci
dentpowerwhichgi
vesanoutputSNRof
uni
ty .

7.Aphotodi
odehasacapaci
tanceof6pF.Cal
cul
atet
hemaxi
mum l
oadr
esi
stance
whichall
owsan8MHzpostdetecti
onbandwi
dth.
a)3.9kΩ
b)3.46kΩ
c)3.12kΩ
d)3.32kΩ
ViewAnswer

Answer:d
Expl
anati
on: Theloadresi
stancei
sgi
venby
-
RL=1/2πCdB
Where
B=Postdet ecti
onbandwidth
Cd=Inputcapacitance
RL=Loadresi st
ance.

8.Theinter
nalgai
nmechani
sm inanAPDi
sdi
rect
lyr
elat
edt
oSNR.St
atewhet
hert
he
gi
v enst
atementistr
ueorf
alse.
a)True
b)False
ViewAnswer

Answer:
a
Expl
anat
ion:Theint
ernal
gainmechani
sm inanAPDincreasesthesi
gnal
curr
entinto
theampli
fi
er.Thi
simprovestheSNRbecausethel
oadresist
anceandampli
fi
ernoise
remai
nsunaf f
ect
ed.
9.___
_____
_ _
__isdependentuponthedet
ect
ormat
eri
al,
theshapeoft
heel
ect
ri
cfi
eld
prof
il
ewithinthedevi
ce.
a)SNR
b)Excessavalanchenoi
sefactor
c)Noisegradient
d)Noisepower
ViewAnswer

Answer :b
Explanati
on:Excessaval
anchenoi
sefactori
sr epresentedasF(
M).I
tsvaluedepends
upont hedetect
ormateri
al,
shapeofelect
ri
cfieldprofil
eandhol
esandelect
rons
i
nclusion.I
tisafuncti
onofmulti
pli
cat
ionfact
or .

10.Forsi
li
conAPDs,t
hev
alueofexcessnoi
sef
act
ori
sbet
ween_
___
___
__
a)0.001and0.002
b)0.5and0.7
c)0.02and0.10
d)1and2
ViewAnswer

Answer:c
Expl
anati
on:Theexcessnoisefactor(
K)i ssameasthatofthemult
ipl
icat
ionfact
or.I
n
caseofholes,
thesmall
ervaluesofKpr oducehighper
formanceandtherefor
ethe
perf
ormanceisachi
evedwhenki ssmall.Forsi
l
iconAPDs,k=0.02to0.10.

11._ _
_ _
______det
erminesahi
ghert
ransmi
ssi
onr
ater
elat
edt
othegai
noft
heAPD
device.
a)At t
enuation
b)Gai n-
bandwidthproduct
c)Dispersionmechanism
d)Ionizati
oncoeffi
ci
ent
ViewAnswer

Answer :
b
Explanat
ion:Gain-bandwidt
hproducti
sdefi
nedasGainmulti
pli
edbythebandwi
dth.
Gainisadi mensionlessquant
it
ybutthegai
n-bandwi
dthpr
oductist
heref
oremeasur
ed
i
nt heunitsoffr
equency .

12.___
______
___
___
__APDsar
erecogni
zedf
ort
hei
rhi
ghgai
n-bandwi
dthpr
oduct
s.
a)GaAs
b)All
oy-made
c)Germanium
d)Sil
i
con
ViewAnswer

Answer
:d
Expl
anati
on:Si
li
conAPDspossessalar
geasy mmetr
yofelectr
onandholei
oni
zat
ion
coef
fi
cient
.Thus,t
heypossesshi
ghgai
n-bandwi
dthproduct
s.TheseAPDsdonot
oper
ateathightr
ansmissi
onrat
es.

13.APDsdonotoper
ateatsi
gnal
wav
elengt
hsbet
ween1.
3and1.
6μm.
a)True
b)False
ViewAnswer

Answer :
a
Explanat
ion:APDshavinghighgain-bandwidthpr
oduct
sdonotoperateatsignal
wav el
engthsbet
ween1. 3and1. 6μm. Hence,t
heseAPDsar
enotpreferedforusein
receiv
ersoperat
ingathightransmissi
onr at
es.

ThissetofOpti
cal
Communi
cati
onsMul
ti
pleChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“FETPre–Ampl
i
fier
s”.

1.___
_______
__ist
hel
owestnoi
seampl
i
fierdev
ice.
a)Sil
i
conFET
b)Amplif
ier-
A
c)Att
enuator
d)Resonator-
B
ViewAnswer

Answer:a
Expl
anati
on:FEToperatesbycont
roll
ingthecurrentfl
owwit
hanel ect
ri
cfiel
dpr
oduced
byanappli
edv ol
tageonthegateofthedevice.Sil
iconFETi
sfabr
icatedforl
ownoi
se
devi
ces.I
tisthelowestnoi
seamplif
ierdevi
ceav ail
able.

2.FETdevi
cehasextr
emelyhighi
nputi
mpedancegr
eat
ert
han_
___
___
__
a)107Ohmsandlessthan108
6 7
b)10 Ohmsandlessthan10
14
c)10 Ohms
d)1023Ohms
ViewAnswer

Answer :
c
Explanat
ion:FEToper
ati
oninv
olvestheappl
iedvol
tageonthegateoft
hedevi
ce.The
gatedrawsv i
rtual
l
ynocurr
ent
,exceptforl
eakage,
givi
ngthedevi
ceext
remel
yhigh
i
nputi mpedance.

3.Theproper
ti
esofabi
pol
art
ransi
storar
esuper
iort
otheFET.
a)True
b)False
ViewAnswer
Answer :
b
Explanat
ion:bipol
artr
ansi
storoperat
esbycontrol
l
ingt
hecurrentflowwithanel
ectr
ic
fi
eldproducedwi t
habasecur r
ent.Thepr
opert
iesofabipol
artransist
orarel
imi
tedby
i
tshightrans-conduct
ancethantheFET.

4.Bipolartr
ansi
stori
smor
eusef
ulampl
i
fyi
ngdev
icet
hanFETatf
requenci
es
____
_ _
__ _
____
a)Abov e1000MHz
b)Equal to1MHz
c)Below25MHz
d)Abov e25MHz
ViewAnswer

Answer:d
Expl
anati
on:I
nFETs,thecurr
entgai
ndropstovaluesnearunit
yatf
requenci
esabove
25MHz.Thetrans-
conduct
anceisfi
xedwithdecr
easinginputi
mpedance.Ther
efor
e,
bi
polart
ransi
stori
smoreusefulampli
fyi
ngdevi
ceatf r
equenci
esabove25MHz.

5.High-per
formancemi
crowav
eFETsar
efabr
icat
edf
rom _
___
___
___
_
a)Sil
icon
b)Germanium
c)Galli
um arseni
de
d)Zinc
ViewAnswer

Answer:c
Expl
anati
on:Si
ncethemid-1970s,t
hedevel
opmentofhigh-
perf
ormancemi
crowave
FETsfoundit
sway.TheseFETsarefabri
cat
edfr
om gal
li
um arseni
deandar
ecall
edas
GaAsmet al
Schott
kyfi
eldeff
ecttr
ansi
stor
s(MESFETs).

6.Galli
um ar
seni
deMESFETsar
eadv
ant
ageoust
hanSi
l
iconFETs.
a)True
b)False
ViewAnswer

Answer :
a
Explanat
ion:Gall
ium ar
seni
deMESFETsareSchot
tkybar
rierdevi
ces.Theyoper
atewi
th
bothlownoi seandhighgai
natmicr
owavefr
equencies(
GHz) .Si
l
iconFETscannot
operatewithwidebands.

7.ThePI N-FEThy bri

drecei
ver
sareacombi nat
ionof_
___
___
___
___
_
a)Hybridresistancesandcapaci
tances
b)Pinphotodi odeandlownoiseampl i
fi
er(
GaAsMESFETs)
c)P-Nphot odiodeandlownoiseampl i
fi
er(
GaAsMESFETs)
d)Attenuatorandl ownoiseampl
ifi
er(GaAsMESFETs)
ViewAnswer
Answer:b
Expl
anation:ThePIN-FETorp-i
-n/FETrecei
veruti
li
zesap-i
-nphotodiodealongwitha
l
ownoi sepreampli
fier(GaAsMESFETs) .I
tisfabr
icat
edusingt
hick-f
ilmintegr
ated
ci
rcuitt
echnology
.Thi shybr
idi
ntegrat
ionreducesthest
raycapacit
ancet onegli
gibl
e
l
evels.

8.PIN-
FEThybri
drecei
veri
sdesi
gnedf
oruseatat
ransmi
ssi
onr
ateof_
___
___
___
___
a)130Mbis-1
t
b)110Mbis-1
t
c)120Mbis-1
t
d)140Mbis-1
t
ViewAnswer

Answer:d
Expl
anati
on:At140Mbis-1,
t theperf
ormanceofPI N-FEThybridrecei
veri
sfoundtobe
comparabl
etogermani
um andalloyAPDr ecei
vers.Adigi
talequali
zeri
snecessar
yas
-1
thehi
gh-i
mpedancefr
ontendeffecti
vel
yintegr
atesthesignalat140Mbi t
s.

9.Iti
sdiffi
cultt
oachi evehighert
ransmi
ssi
onr
atesusi
ngconv
ent
ional
___
___
___
_
a)Voltageamplifi
er
b)Wav eguideStr
uct ures
c)PIN-FETorAPDr eceiver
s
d)MESFET
ViewAnswer

Answer :
c
Explanat
ion:I
tisdif
fi
cultt
oachievehighertr
ansmissi
onrat
esduet oli
mi t
ati
onsinthei
r
gainbandwidthproduct
s.Also,t
hetrade-of
fbetweenthemult
ipl
icat
ionfactor
requir
ementandt hebandwidthl
imit
st heperf
ormanceofconventi
onalrecei
vers.

10.Whichr ecei
vercanbef abr
icat
edusingPI
N-FEThy
bri
dappr
oach?
a)Trans-i
mpedancef rontendrecei
ver
b)Gall
ium arseni
dereceiver
c)High-i
mpedancef ront-
end
d)Low-impedancef r
ont-end
ViewAnswer

Answer:a
Expl
anati
on:Trans-i
mpedancefr
ont-
endreceiver
sarefabr
icat
edusi
ngt
hePIN-
FET
hybr
idapproach.Anexampleofsuchrecei
versconsi
stsofaGaAsMESFETandtwo
complementarybipol
armicr
owavetr
ansist
ors.

11.Asili
conp- i
-nphot
odi
odeuti
l
izedwi
tht
heampl
i
fierandt
her
ecei
veri
sdesi
gnedt
o
acceptdataatar at
eof__
____
_____
a)276Mbits-1
b)274Mbi ts-1
c)278Mbi
ts-1
d)302Mbis-1
t
ViewAnswer

Answer :
b
Explanat
ion:Asi
li
conp-i-
nphot
odiodei
susedwit
hthelow-noisepr
eampli
fi
er.Thi
s
preamplif
ieri
sbasedonaGaAsMESFET.Thus,arecei
verusingp-i
-nphot
odi
ode
acceptsadatarateof274Mbis-1gi
t vi
ngasensi
ti
vi
tyar
ound- 35dBm.

12.Whati susuall
yrequiredbyFETst oopt
imi
zet
hef
igur
eofmer
it
?
a)Attenuati
onofbar r
ier
b)Mat chi
ngwi t
ht hedepletionregi
on
c)Dispersi
onoft hegater egion
d)Mat chi
ngwi t
ht hedetector
ViewAnswer

Answer:d
Expl
anati
on:Totalcapacit
anceisgivenbyCt=Cd+Ca.Thef igur
eofmeriti
sopti
mized
whenCd=Ca.Thisrequi
resFETst obemat chedwiththedet
ector
s.Thisr
equir
esFETsto
bematchedwi t
hthedet ect
ors.Thi
spr ocedureisusuall
ynotwelcomedbythedevi
ce
andisnotpermitt
edincur r
entopti
calreceiverdesi
gn

ThissetofOpt
ical
Communicat
ionsMult
ipl
eChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Hi
ghPerf
ormanceRecei
ver
s”.

1.Howmanydesi
gnconsi
der
ati
onsar
econsi
der
edwhi
l
edet
ermi
ningt
her
ecei
ver
perf
ormance?
a)Three
b)Two
c)One
d)Four
ViewAnswer

Answer :
a
Explanat
ion:Thr
eemai nconsi
derati
onsareutil
izedfordeter
miningtherecei
ver
performance.Noiseperf
ormanceisamaj ordesignconsider
ati
onprovidi
ngal i
mit
ati
on
tothesensiti
vi
ty.Othert
woconsiderat
ionsarebandwidthanddy namicrange.

2.FETpreampl
i
fier
spr
ovi
dehi
ghersensi
ti
vi
tyt
hant
heSi
-bi
pol
ardev
ice.
a)True
b)False
ViewAnswer

Answer:a
Expl
anati
on:Atl
owspeeds,theFETpr eampl
i
fier
sprovi
dehi
ghersensi
ti
vi
tythantheSi-
-
1
bi
polardevi
ce.I
tisappar
entthatbel
ow10Mbitst heSi
MOSFETpr eampl
if
ierpr
ov i
desa
l
owernoi
seper
for
mancet
hanGaAsMESFET.

3.Whatistheabbrev i
at i
onofHBT?
a)Homo-junct
ionuni polartransistor
b)Homo-junct
ionbipol artr
ansist or
c)Het
ero-j
uncti
onbi polartransistor
d)Het
ero-Bandwidtht r
anscendence
ViewAnswer

Answer:c
Expl
anati
on:
HBTisabbreviat
edasHetero-
junct
ionbipol
artr
ansist
or.Itcompri
sesa
sel
ecti
vel
ydopedhet
ero-
juncti
onFET.I
tisahigh-speed,
low-noi
setransist
ordevi
ce.

4.Whattypeofr ecei
v er
sareusedtoprovidewi
debandoper
ati
on,
low-
noi
seoper
ati
on?
a)APDopt i
calreceivers
b)Optoel
ectroni
ci nt
egratedci
rcui
ts(OEICs)
c)MESFETr eceivers
d)Trans-
impedancef r
ont-
endrecei
vers
ViewAnswer

Answer:b
Expl
anati
on:Astr
ategyfortheprovi
sionofwideband,l
ow-noi
ser eceiv
ersinvolvesthe
useofp-i-
nphot
odiodedetectoral
ongwiththemonolit
hicint
egrationofthedev icewi
th
semiconduct
oral
loyFETs.Ithasanoperati
ngwav el
engthof1.1to1. 6μmr anges.

5.____
_____
__cir
cui
tsextendsthedy
nami
crangeoft
her
ecei
ver
.
a)Monoli
thic
b)Trans-
impedance
c)AutomaticEr
rorCont
rol(AEC)
d)AutomaticGai
nControl(AGC)
ViewAnswer

Answer :d
Explanati
on:AGCcircui
text
endsthedynami crangebydiv
er t
ingexcessphotocur
rent
awayf rom t
heinputofther
ecei
ver.Thereceiv
erdynamicrangei sanimport
ant
perf
or manceparameterasi
tprovi
desameasur eofthedi
fferencebetweenthe
sensiti
vit
yanditsoverl
oadl
evel
.

6.Thesensi
ti
vi
tyoft
hel
ow-impedanceconf
igur
ati
oni
s__
___
___
___
_
a)Good
b)Poor
c)Great
d)Sameasthatofhi
gh-
impedanceconf
igur
ati
on
ViewAnswer

Answer
:b
Explanation:Arecei
versaturat
ionl evelisdeter
minedbyt heval
ueoft hephot
odiode
biasresistor
.Thephotodiodebi asr esi
storvalv
eisindi
rectl
yproport
ionalt
othe
sensiti
vi
tybutisdirect
lyproportional i
nlowimpedanceconf i
gurati
on.Thelowresist
or
valueprov i
desl
esssensitivi
tyi
nt helow-impedanceconfigur
ati
on.

7.Whatisgeneral
l
yusedtodeter
mi netherecei
verper
for
mancechar
act
eri
sti
cs?
a)Noise
b)Resist
or
c)Dynamicrange&sensi
ti
vi
tycharacter
ist
ics
d)Impedance
ViewAnswer

Answer :c
Explanation:Dynamicrangeandsensiti
vitycharacter
ist
icsinvol
veagr aphofreceiv
ed
powerl evelandt heval
ueoffeedbackresistor
.Thehi ghvalueofphotodiodebias
resi
storint hehighimpedancefrontendcauseshi ghsensiti
vit
yandanar rowdy namic
range.Thesef actorspr
oveusefulfordetermini
ngt heperformancecharacter
isti
csof
receiv
er .

8.The_ ___
_ __
___techni
queeli
minat
esthethermalnoi
seassoci
atedwi
tht
hef
eedback
resi
storinthetrans-i
mpedancefr
ontenddesign.
a)Compensat i
on
b)Resonatingimpedance
c)Electr
omagnet ic
d)Opt i
calfeedback
ViewAnswer

Answer:
d
Expl
anat
ion:Theopt i
calf
eedbackst r
ategyprovesmostuseful
atlowt r
ansmissi
onrate.
Theuseofoptical
lycoupledfeedbackhasdemonst r
ateddynamicrangesofaround40
dBforp-
i-
nreceiversoperat
ingatmodestbi trat
es.I
tremovesther
mal noi
seassociat
ed
wit
hthefeedbackresist
or.

9.Theremov alofthefeedbackresi
storint
heopt
ical
feedbackt
echni
queal
l
ows
reci
eversensit
ivi
tyoftheorderof___
_ _
____
___
___
a)-54dBm at2Mbi t
/sec
b)-12dBm at2Mbi t
/sec
c)-64dBm at2Mbi t
/sec
d)-72dBm at2Mbi t
/sec
ViewAnswer

Answer :c
Explanati
on:Theremov
aloffeedbackr
esist
orint
heopticalfeedbacktechni queall
ows
l
ownoi seperfor
mance.Lownoiseperf
ormance,i
nturn,af
fectssensit
ivit
y .Thereceiv
er
sensiti
vi
tygetshi
ghoftheor
derof-64dBm at2Mbit
/sectransmissi
onr ates.
10.Theopt
ical
feedbackt
echni
quei
susef
ulatl
owt
ransmi
ssi
onr
ates.
a)True
b)False
ViewAnswer

Answer:a
Expl
anati
on: Theopticalfeedbackt
echniqueisusefulatlowtr
ansmi ssi
onrates
becausei
nt hiscaset hefeedbackr
esistorsemploy
edar esmallerthant heopti
mum
val
ueforlow-noiseper f
ormance.Thisisdonetomai ntai
ntheresistoratapracti
cal
size
of1MΩ.Largev aluesoff eedbackr
esistorl
imi
tsthedy namicr
ange.

11.Howmanyty
pesofopt
ical
ampl
i
fiert
echnol
ogi
esar
eav
ail
abl
e.
a)One
b)Three
c)Four
d)Two
ViewAnswer

Answer:d
Expl
anati
on:Ther
earet wobasi
copticalampli
fi
ertechnol
ogi
esavail
abl
e.Theyare
semiconduct
oropti
calampli
fi
ersandfiberampli
fi
ers.Bot
hthesedevi
cesareuti
l
izedi
n
thepre-
ampli
fi
cati
onrole.

12.Theopt
imum f
il
terbandwi
dthi
sty
pical
l
yint
her
ange_
___
___
___
___
___
a)0.1t
o0.3nm
b)0.5t
o3nm
c)0.1t
o0.3μm
d)0.5t
o3μm
ViewAnswer

Answer:b
Expl
anati
on:Theopt i
mum fi
berbandwi dthisdeterminedbydetectornoise,
tr
ansmissi
onrateandt het
ransmit
terchirpcharacteri
sti
cs.I
tistypical
l
yi nt
her
angeof
0.5t
o3nmasi tdependsuponthefil
terinsert
ionloss.

8.Quest
ionsonOpt
ical
Ampl
i
ficat
ion,
Wav
elengt
hConv
ersi
onandRegener
ati
on

Thesect
ioncont
ainsquest
ionsandanswer
sonsemi
conduct
oropt
ical
ampl
i
fier
s,f
iber
andwavegui
deamplif
ier
sandconversi
on.

ThissetofOpti
calCommunicat
ionsMult
ipl
eChoiceQuest
ions&Answer
s(MCQs)
focuseson“Opti
calAmpl
i
fiers–Semiconduct
orOpti
calAmpli
fi
ers”
.

1.Forl
inearaswel
lasi
nnonl
i
nearmode_
___
___
___
___
__ar
emosti
mpor
tantnet
wor
k
el
ement s.
a)Opti
calampli
fi
er
b)Opti
caldet
ector
c)A/Dconver
ter
d)D/Aconvert
ers
ViewAnswer

Answer:a
Expl
anati
on:Insi
ngle-
modefibersyst
em, si
gnaldispersi
onisver
ysmall,
hencetherei
s
att
enuati
on.Thesesyst
emsdon’ tr
equir
esignalregenerat
ionasopt
ical
amplif
icat
ioni
s
suff
ici
entsoopti
calampli
fi
eraremostimpor t
ant.

2.Themor eadvantagesopti
cal
ampl
i
fieri
s__
___
___
___
_
a)Fiberampl i
fi
er
b)Semi conductoramplif
ier
c)Repeat er
s
d)Modehoopi ngampl i
fi
er
ViewAnswer

Answer:b
Expl
anati
on:Semiconduct
oropti
cal
ampli
fi
ersar
ehavi
ngsmall
ersi
ze.Theycanbe
i
ntegr
atedtoproducesubsyst
ems.Thusar
emoreprof
it
abl
ethanotheropt
ical
ampli
fi
er.

3._________
____
_ _
_cannotbeusedforwi
debandampl
i
ficat
ion.
a)Semi conductoropti
calampl
if
ier
b)Erbium-dopedf i
berampli
fi
er
c)Ramanf i
berampl i
fi
er
d)Bril
l
oui nfi
berampl i
fi
er
ViewAnswer

Answer:d
Expl
anati
on:Br
il
loui
nfi
berampl
i
fiersprov
ideaverynar
rowspect
ral
bandwi
dth.These
bandwi
dthcanbearound50MHz ,hencecannotbeemploy
edforwi
deband
ampli
fi
cati
on.

4._________
___i
susedpr efer
ablyforchannel
sel
ect
ioni
naWDM sy
stem.
a)Semi conductoropti
calampli
fi
er
b)Erbium-dopedf i
beramplif
ier
c)Ramanf i
berampl i
fi
er
d)Bril
l
oui nfi
berampl i
fi
er
ViewAnswer

Answer :
d
Expl
anation:Br
il
loui
nfi
berpr
ovidesampli
fi
cat
ionofapart
icul
archannel.Thi
s
amplif
icati
oncanbedonewithoutboost
ingot
herchannel
sbesidesthatpart
icul
ar
channel.

5.Forusedi
nsi
ngl
e-modef
iber_
___
___
___ar
eusedpr
efer
abl
y.
a)Semi conductoropti
calampl
if
ier
b)Erbium-dopedf i
berampli
fi
er
c)Ramanf i
berampl i
fi
er
d)Bril
l
oui nfi
berampl i
fi
er
ViewAnswer

Answer:
a
Expl
anat
ion:
Semiconduct
oropt
ical
amplif
iershavel
owpowerconsumpti
on.Ther
e
si
nglemodestr
uctur
emakesthem appr
opriateandsui
tabl
eforusedi
nsi
ngl
emode
fi
ber
.

6.Mostl
y_ _
____
___
___areusedi
nnonl
i
nearappl
i
cat
ions.
a)Semiconduct
oropti
calampl
if
ier
b)Erbi
um-dopedfi
berampli
fi
er
c)Ramanf i
berampli
fi
er
d)FPAs
ViewAnswer

Answer :d
Explanation:
FPAshav ear
esonantnat
ure.Thi
scanbecombinedwit
hthei
rhighint
ernal
fi
elds.Theypr ovi
depul
seshapi
ngandbi-st
abl
eelement
s.Thus,
areusedwidel
yin
nonlinearappli
cati
on.

7.___
______
___
___i
ssuper
iorascompar
edt
o__
___
___
___
___
___
a)TWA, FPA
b)FPA,TWA
c)EDFA,FPA
d)FPA,EDFA
ViewAnswer

Answer :a
Explanat i
on:InTWAoper at
inginsi
ngl
e-passampl i
fi
cati
onmode, t
heFabry-
Perot
resonancei ssuppressedbyfacetr
efl
ecti
vit
yreducti
on.Thi
saffect
sinincr
easi
ngof
ampl i
fierspectr
albandwidt
h.Thismakesthem lessdependenceoftr
ansmissi
on
charact er
ist
icsonfluct
uati
onsinbi
asedcurrent
, i
nputsi
gnalpol
ari
zati
on.ThusFPAar
e
superiortoTWA.

8._________
____
_ar eoperat
edatcurr
entbey
ondnor
mal
lasi
ngt
hreshol
dcur
rent
,
pract
icall
y.
a)Semi conductoropti
calampli
fi
er
b)Erbium-dopedf i
beramplif
ier
c)Ramanf i
berampl i
fi
er
d)Bril
louinfi
berampl i
fi
er
ViewAnswer

Answer
:a
Expl
anat
ion:Theant i
-r
efl
ect
ionf
acetcoat
ingsaff
ect
sintheform ofi
ncr
easi
nglasi
ng
curr
entt
hreshold.Thi
scausesSOAstobeoper at
edatcur
rentbeyondnormall
asi
ng
thr
eshol
dcurrent.

9.Anuncoat edFPAhaspeakgainwavel
ength1.
8μm,modespaci
ngof0.
8nm,
andl
ong
acti
veregionof300v.Det
ermineRIofact
ivemedium.
a)4.25×106
b)3.75×107
c)3.95×107
d)4.25×109
ViewAnswer

Answer:
b
Expl
anat
i n=λ2/
on: 8×10-6/
2δλL=1. 8×10-9×300×10-6=3.
2×0. 75×107.

10.Deter
mi net
hepeakgai
nwav el
engt
hofuncoat
edFPAhav
ingmodespaci
ngof
2nm,and250μmlongact
iveregi
onandR.Iof3.
78.
a) 25×10-4
2.
b) 53×10-8
4.
c) 94×10-6
1.
d) 25×109
4.
ViewAnswer

Answer:
c
Expl
anat
ion:
Thepeakgai nwavel
engthisgi
venby
2 -
9 -
6
94×106m.
-
λ=n2δλL=3.
78×2×2×10 ×250×10 =1.

11.AnSOAhasnetgai
ncoef
fi
cientof300,
atagai
nof30dB.Det
ermi
nel
engt
hofSOA.
a)0.32m
b)0.023m
c)0.245m
d)0.563m
ViewAnswer

Answer:b
Expl
anati
on:Thelengt
hofSOAisdeter
minedby
L=Gs(dB)/10×g×l
oge=30/
10×300×0.
434`
=0.023m.

12.AnSOAhasl engt 43×10-3m,

hof35. at30dBgai
n.Det
ermi
nenetgai
ncoef
fi
cient
.
a)5.124×10-3
b)1.12×10-4
c)5.125×10-3
d)2.15×10-5
ViewAnswer

Answer
:c
Explanat
ion:Thenetgai
ncoeffi
cientofSOAisgi
venby
-
3
g=L×10×l oge/Gs(
dB)=35.
43×10 ×10×0.434/
30
=5.125×10-3.

13.AnSOAhasmodenumberof2.
6,spont
aneousemissi
onfact
orof4,
opt
ical
bandwidthof1THz
.Det
ermi
nenoi
sepowerspect
ral
densit
y.
a)1.33×10-3
b)5.13×1012
c)3.29×10-6
d)0.33×10-9
ViewAnswer

Answer :a
Explanation: Thenoi
sepowerspect raldensityPasti
s
Past=mnsp( Gs-
1)hf
b
=2. 6×4(1000- 1) 63×10-34×1.
×6. 94×1014×1×1012
-
3
=1. 33×10 W.

14.AnSOAhasnoi sepowerspect
ral
densi
tyof1.
18mW,spont
aneousemi
ssi
onf
act
or
of4,opt
icalbandwi
dthof1.
5THz.Deter
minemodenumber.
a)1.53×1028
b)6.14×1012
c)1.78×1016
d)4.12×10-3
ViewAnswer

Answer:a
Expl
anation: Themodenumberi sdeter
minedby
m =Past/
nsp(Gs-1)hfB
=1.18×10-3/4(1000-
1) 63×10-34×1.
×6. 94×1014×1.
3×1012
-
34
=1.53×10 .

ThissetofOpt
icalCommunicati
onsMul
tipl
eChoi
ceQuest
ions&Answer
s(MCQs)
focuseson“Fi
berandWaveguideAmpli
fi
ers”
.

1.Thespect
ral
dependenceongai
nisal
way
sconst
ant
.
a)True
b)False
ViewAnswer

Answer:
b
Expl
anat
ion:Thespectr
aldependenceongaini
smostlynotconst
ant
.Thust
hespect
ral
bandwi
dthforerbi
um-dopedsil
icafi
ber
sisrest
ri
ctedt
oaround300GHz.

2.ESA_ _
___
___t
hepumpi
ngef
fi
ciencyofdev
ice.
a)Incr
eases
b)Doesnotaffects
c)Reduces
d)Hasnegli
gibleeff
ecton
ViewAnswer

Answer :c
Explanati
on:Inerbi
um fi
berampli
fi
erphotonsatpumpwav el
engthpr
omot esthe
electr
onsinupperlasingl
eveli
ntoahighstat
eofexci
tat
ion.Theseel
ect
ronsdecaynon-
radiat
etointermediat
elevel
sandthenbacktoupperl
asinglevel
ther
ebyreducing
pumpi ngeff
iciency
.

3.Si
gnal amplif
icati
onisobtai
nedin_____
___
____
a)Erbi
um- dopedf l
uoro-zi
r-
car
bonatef
ibermult
imode
b)Rare-eart
h-dopedfiberampli
fi
ers
c)Ramanf i
bersystems
d)Bril
l
ouinf i
berampl i
fi
er
ViewAnswer

Answer :a
Explanation:
Toavoidexcit
edstateabsorpt
ion(ESA).Weshouldusedif
fer
entgl
ass
technologyinpl
acebyusinga488nmpumpwav el
ength;
erbi
um-dopedmulti
mode
fl
uorozi rcar
bonat
efiberprov
idesgainat1.525μmwav el
engths.

4.Iti
spossibl
etoconstructasi
ngl
erar
e-ear
th-
dopedf
iberampl
i
fierwhi
chpr
ovi
des
amplifi
cat
ionforal
l
-bands.
a)True
b)False
ViewAnswer

Answer:b
Expl
anati
on:Eachmat er
ialhasdif
fer
entabsor
ptionemissionproper
ti
estoabsor
b
ener
gyeitheri
nsingleormultist
eps.Al
soitpossessespropert
ytoemitli
ghti
noneor
morenarrowspectralr
anges.Thuswecannotconst r
uctasingl
eearth-
dopedfi
berf
or
al
lbands.

5.___
______
_ _____isconstructedusingerbi
um-
dopedgl
ass.
a)Anerbium- basedmi crofiberamplif
ier
b)Rare-
earth-dopedf i
berampl if
ier
s
c)Ramanf i
bersy st
ems
d)Bri
ll
ouinfiberampl i
fier
ViewAnswer

Answer :a
Explanati
on:Ascomparedtoot
herglass,er
bium-basedmicr
ofiberampl
if
ieri
smore
advantageous.Thi
sampli
fi
erpr
ovideshighopti
calgainov
erjustafewcenti
meter
sof
fi
berov ermanymeter
s.
 3+
6.___
______
_ __usesEr -
dopederbi
um glass.
a)Anerbium- basedmi crofi
beramplif
ier
b)Rare-
earth-dopedfiberamplif
iers
c)Ramanf i
bersy stems
d)Bri
ll
ouinfiberamplifier
ViewAnswer

Answer:a
3+
Expl
anation:Theerbium-
basedmicrofi
berampli
fi
erusesEr -
dopeder
bium gl
ass.I
t
support
st hedopingconst
ruct
ionsofer
bium i
onsathighl
ev el
sascomparedto
convent
ionalglasses.

7.Themostadv antageousampl i
fi
cat
ionis_
___
___
___
__
a)Anerbium-basedmi crofi
berampli
fier
b)Rare-
eart
h-dopedf i
beramplif
ier
s
c)Ramanf i
bersystems
d)Bri
l
louinfi
berampl i
fier
ViewAnswer

Answer :c
Explanati
on:Ascomparedt oal
ltheamplif
icati
ons,Ramanamplif
icati
onismore
advantageous.I
thasself
-phasemat chi
ngbetweenpumpofsi gnaltoget
herwi
thbr
oad
gai
nbandwi dthascompar edtoothernonl
inearprocesses.

8._____
_ _
__isalsoknownasl umpRamanampl
i
fier
s.
a)Aner bi
um- basedmi cr
ofiberamplif
ier
b)Rare-eart
h-dopedfiberampl i
fi
ers
c)Ramanf i
bersystems
d)DiscreteRamanampl i
fi
ers
ViewAnswer

Answer:d
Expl
anation:Di
scr
eteRamanAmpl
i
fier
sarelumpedel
ement
s.Thi
slumpedel
ementi
s
tobeinsertedi
ntr
ansmissi
onl
i
netoprov
idegai
n.

9.____
__ _
___ _
____extendst
hepumppoweri nt
otr
ansmi
ssi
onl
i
nef
iber
.
a)Aner bi
um- basedmi crof
iberamplif
ier
b)Rare-earth-
dopedf i
berampl i
fi
ers
c)Ramanf i
bersy st
ems
d)Dist
ributedRamanampl i
ficati
on
ViewAnswer

Answer:d
Expl
anation:
InDist
ributedRamanampl
if
icat
ion,all
pumppowerisconfi
nedtolumped
el
ement .Anditi
sdistri
butedwhent
heampli
ficat
iontakespl
aceamongsever
al
ki
lometers.
10.____
_ __
_ __
___ar
ecalledhybri
dRamanampli
fi
er.
a)Lumpedanddi st
ri
butedRamanAmpl i
fi
ers
b)Rare-
ear th-
dopedfi
berampl i
fi
ers
c)Ramanf i
bersyst
ems
d)Dist
ributedRamanampl i
fi
cati
on
ViewAnswer

Answer:a
Expl
anati
on:Lumpedanddist
ri
butedRamanAmplif
ierscanbecombi
nedtogethertobe
usedinwidebandappl
i
cat
ion.Thi
scombinat
ioni
ncreasesover
all
ampl
if
iedspectral
bandwidt
h.

11.I
n_ __
______
__theASEcont r
ibut
esmostofnoi
se.
a)Anerbium-basedmi cr
ofiberamplif
ier
b)Rare-
earth-
dopedfiberampl i
fi
ers
c)Ramanf i
bersystems
d)Dist
ri
butedRamanampl i
ficati
on
ViewAnswer

Answer :d
Explanati
on:
ASEcont r
ibut
esmostofnoisei
nRamanAmpli
fi
cati
on.Thecommon
sourcesofnoisei
ncl
udebeati
ngofsignalwi
thASE,
mixi
ng,
self
-phasemodul
ati
onand
cross-pl
anemodulat
ion.

12.I
n_ __
______
____Ray l
eighscatt
eri
ngcanber
educed.
a)Anerbium-basedmi cr
of i
beramplif
ier
b)Rare-
earth-
dopedfiberampl i
fi
ers
c)Ramanf i
bersystems
d)Dist
ri
butedRamanampl i
fi
cati
on
ViewAnswer

Answer :d
Explanati
on:Ray
lei
ghscat
ter
ingadv
erseef
fectscanbereducedinRamanAmpli
fi
cat
ion.
Thiscanbedonebyempl oyi
ngtwoormorestagesofamplif
icat
ionov
ersi
ngl
estage
ampl i
fi
cati
onoverf
iber
.

13.Comput ethef i
bernonl
i
nearcoeff
ici
entofapar
ametr
icopti
cal
ampl
i
fierhav
ing
parametri
cpeakgai nof63.6dB,si
gnalpowerof1.
6W,l
ength520.
a)2.78×10-2W-1km-1
b)9.61×10-3W-1km-1
c)3.25×10-3W-1km-1
d)5.61×10-4W-1km-1
ViewAnswer

Answer:
b
Expl
anat
ion:
Thef
ibernonl
i
nearcoef
fi
cientcanbef
oundby
 2
γ=Gp(dB)
-l
og10(
0.25)
/Ppl×L×1/10log10(2.
718)
61×10 W km-1.
-
3 -1
=63.
6+6/1.
6×1.6×520×1/8.7=9.

14.Comput esignalpowerforparametr
icampl
if
ierhavi
nglengt
hof500,
nonl
i
neargai
n
coeffi
ci 6×10-3W-1km-1andpar
ent12. ametri
cpeakgainof63.9dB.
a)0.245W
b)0.012W
c)0.19W
d)0.342W
ViewAnswer

Answer:b
Expl
anati
on:Signalpoweri
sgivenby
2
Pp=Gp(
dB)-
log10(
0.25)
/γL×1/10l
og10(
2.718)=63.
9+6/ 6×10-3×1/8.
12. 7
=0.012W.

15.Computethegainofpar
ametr
icampl ifi
erhav
ingsi
gnal
powerof1.
6W,
lengt
hof500,
non-l
i
nearcoeff
ici 19*10-3W-1km-1.
entof10.
a)34.890
b)19.15
c)18.22
d)16.11
ViewAnswer

Answer :c
Explanation: Quadrati
cgainisgi
venby
-
2
Gp(dB)=10l og10(
γPplL)
Wher eL=l engthofampl i
fi
er
Ppl=si
gnal power
γ=nonlinearcoef fi
cient.

Thi
ssetofOpt
icalCommunicat
ionsonl
i
nequi
zfocuseson“
Wav
elengt
hConv
ersi
on
andOpt
ical
Regenerat
ion”
.

1.______
_ __
_ _
_ _
____
__isdefi
nedasaprocessbywhichthewavelengt
hoft he
tr
ansmi t
tedsi gnali
schangedwit
houtal
teri
ngthedatacarr
iedbythesignal.
a)Wav elengthconversi
on
b)Attenuation
c)Sigmamanagement
d)Wav elengthdispersi
on
ViewAnswer

Answer:
a
Expl
anat
ion:Wavel
engthconver
sionobserv
esthechangesint
helengt
hoft
hewav
e.I
t
doesnotpropor
ti
onat
ewi t
hthedatacarr
iedbythesi
gnalorwave.
2.Thedevicewhichisusedt
oper
for
m wav
elengt
hconv
ersi
oni
scal
l
edas_
___
___
___
_
a)Att
enuator
b)WavelengthGyrat
or
c)Wavel
engt hCir
cul
ator
d)Wavelengthtr
ansl
ator
ViewAnswer

Answer:
d
Expl
anat
ion:
Wavel
engthtransl
atorchangest
hefrequencyoft
hewav eandhenceiti
s
al
socall
edasfr
equencychanger.I
tdoesnotaff
ectthedatacarr
iedbythewave.

3.Awav el
engthconver
teri
stermedas_
___
___i
ftheconv
ert
edwav
elengt
hisl
onger
thant
heor i
ginalsi
gnal
wavelengt
h.
a)Downconv ert
er
b)Upconverter
c)Att
enuator
d)Shi
fter
ViewAnswer

Answer :
b
Explanat
ion:Awavel
engthconver
teriscapableofreceivi
nganincomi ngsi
gnalatany
wav el
engthatt
heinputpor
tandproducesout putattheoutputport
.Aconv er
teri
s
termedasupconv er
terwhentheoutputsignalwavelengt
hislongerthantheori
ginal
signalwavel
engt
h.

4.The________
___conver
ter
scannotpr
ocessdi
ff
erentmodul
ati
onf
ormat
s.
a)Shi
fti
ng
b)Optoel
ectronicwavel
engt
h
c)Opt-
cir
cular
d)Magneticsimulat
ing
ViewAnswer

Answer:b
Expl
anation:I
noptoelect
roni
cwav elengt
hconv ert
ers,
thei nfor
mat i
oncont
ainedi
nt he
i
ntensit
y,fr
equency,phaseofthesignalisrequi
redtober eprocessedfort
hepurposeof
wavelengthconver
sion.I
tdoesnotpr ocessallt
hemodul at i
onformats.

5.Theopt i
calmedi
um,
incaseofopt
ical
wav
elengt
hconv
ersi
oni
s__
___
___
___
a)Depleted
b)Linear
c)Non-li
near
d)Dispersi
ve
ViewAnswer

Answer:
c
Expl
anat
ion:
Thei
mpl
ement
ati
onofopt
ical
wav
elengt
hconv
ersi
oni
nvol
vesnon-
li
near
it
y
oftheopti
calmedi
um.I
tcanbeei
theract
iveorpassi
ve,
eachpr
ovi
dingdi
ff
erent
nonli
nearef
fect
s.

6.Theprocessofi mposi
ngthenonl
i
nearr
esponseoft
hemedi
um ont
othecont
rol
si
gnalisknownas_ _
____
___
____
_scheme.
a)Demodul at
ion
b)Absorpti
on
c)Cross-
modul ati
on
d)Repeatermixing
ViewAnswer

Answer:c
Expl
anati
on:Thecross-
modulat
ionschemeinvol
veschangesproducedduetot
he
i
ntensi
tyvar
iat
ionoftheint
ensi
ty-
modulat
edinputsi
gnal
.Itt
akesplaceint
heacti
ve
cavi
ty.

7.Howmanyappr
oachesar
eadopt
edbyt
hecr
oss-
modul
ati
onscheme?
a)Four
b)Three
c)Two
d)Fiv
e
ViewAnswer

Answer :a
Explanati
on:Basedont heproper
ti
esofthenonl
inearmedium,t
hecr oss-
modulat
ion
schemecanbedi v
idedintofourmainappr
oaches.Thesearecr
oss-gainmodulat
ion,
cross-phasemodulati
on,cross-
absor
pti
onmodul at
ion,
dif
fer
ent
ialpolari
zat
ion
modul ati
on.

8.__________wavel
engt
hconv
ert
ersmakeuseofapassi
veopt
ical
medi
um t
oexpl
oit
non-l
inearef f
ect
s.
a)Bipolar
b)Opt oelect
roni
c
c)Magnet i
c
d)Coher ent
ViewAnswer

Answer:d
Expl
anation:Thenonli
neareff
ectsi
ncl
udefour
-wav
emi xi
nganddi
fferencefrequency
generat
ion.Coherentwavel
engthconv
ert
ersuseapassiv
emedium toextendthe
changesofnonlinearef
fect
s.

9.A___
_______
___wavelengthconver
terut
il
izest
henonl
inearproper
tiesofa
semi
conductoropt
icalamplifi
ert
operformtheconv
ersi
onpr ocess.
a)Cr
oss-gai
nmodul at
ion
b)Cr
oss-phasemodulation
c)Cross-absor
pti
onmodulat
ion
d)Diff
erenti
alpol
ari
zat
ionmodulat
ion
ViewAnswer

Answer:a
Expl
anation:Cross-
gainmodul at
ionwavelengthconv
ert
eri
salsocal
l
edasXGM
wavelengthconverter
.Itusessemiconductoropti
cal
ampli
fi
er(
SOA)alongwi
thi
ts
nonl
inearproperti
esfortheconversi
onprocess.

10.Theintensit
ymodul
ateddat
aononesi
gnal
wav
elengt
hiscal
l
edas_
___
___
a)Disperseddata
b)Pumpsi gnal
c)Probesignal
d)Frequencysignal
ViewAnswer

Answer:b
Expl
anation:
Pumpsignali
sint
ensi
tymodulat
eddata.I
tpr
oducesvari
ati
onsinthe
carr
ierdensi
tywi
thi
ntheSOAwhichprov
idesinv
ert
edgainmodulat
ionintheSOA
medium.

11.Theprobesi
gnal
isi
nver
set
othatoft
hepumpsi
gnal
.
a)True
b)False
ViewAnswer

Answer:a
Expl
anation:
Thegainmodulati
onsofthepumpsignal
arei
mpri
ntedontotheprobe
si
gnal.Thus,t
heprobesi
gnalacqui
resthei
nver
secopyoft
hepumpsi gnal
,ther
eby
cont
ri
butingtothewavel
engthconv
ersionwi
ththepumpsi
gnal
.

12.I
nt heXGM conv
ert
er,
thet
ransf
erf
unct
ionmai
ntai
nst
her
ect
angul
arshape.
a)True
b)False
ViewAnswer

Answer:
b
Expl
anat
ion:Bydef
aul
t,t
heideal
transf
erfunct
ionshoul
dberectangul
arinshape.Buti
t
doesnotapplyt
hesameforXGM convert
erastheamplit
udegraduall
ydecr
eases.

13.Thespeedofoper ati
onofXGM wav
elengt
hconv
ersi
oni
sdet
ermi
nedbyt
he
___
__ _
_____
____oftheSOA.
a)Depleti
onlevel
b)Holeconcentrat
ion
c)Carri
erdynamics
d)Electr
onconcentrat
ion
Vi
ewAnswer

Answer:
c
Expl
anat
ion:Thecarri
erdynami csdealswiththei
nteract
iont
imebetweentheinputand
thepr
obesignal
.Oni ncr
easingt hei
nteract
ionti
me,thespeedofoperat
ionofXGM
wavel
engthconver
sionisincreased.

14._______
_____i
sdefi
nedasthedev
iat
ionint
heemi ssi
onfrequencywi
thr
espectt
o
ti
mewhenal aserisdr
ivenbyat
ime-
varyi
ngcurr
entsource.
a)Int
ensityprobe
b)Dispersi
on
c)Attenuati
on
d)Frequencychir
p
ViewAnswer

Answer :
d
Explanat
ion:Frequencychi
rpoccur
sduringthepr
ocessofXGM andXPM.I
tisof
ten
ter
medasi nst
antaneousfr
equencyvar
iati
on.

15.Whenfrequencychi
rpshi
ft
stheopt
ical
frequencyt
owar
dst
heshor
terwav
elengt
h,i
t
i
sknownas_ _
_____
_
a)Redshif
t
b)Greenshi
ft
c)Yell
owshift
d)Blueshi
ft
ViewAnswer

Answer:d
Expl
anati
on:Whenf requencychi
rpshif
tst
heopti
calf
requencyt
owardstheshor
ter
wavel
ength,i
tisknownasbl ueshif
t.Si
mil
arl
y,whenf
requencychi
rpshi
ftst
heopti
cal
fr
equencytowardsthelongerwavel
ength,
iti
sknownasr edshi
ft
.

Whatistherangeoftransmissionofextendedlonghaulnet
work?
a)200-400km
b)600-1000km
c)1000-2000km
d)2000-4000km
ViewAnswer
Answer:c
Expl
anation:
Extendedlonghaul net
workscompr iseofDWDM li
nks.Thetransmissi
onr angesmayv ar
ydependi
ng
uponthecomplexityofthenetwork.Theextendedlonghaulnet
work’st
ransmissionrangev ar
iesf
rom 1000to2000
km.

Thesmal lsect
ionoff
iberwhi
chi
scoupl
edt
otheopt
ical
sour
cei
sknownas_
___
___
__
a.
 Fl
y l
ead
b.
 Pigtai
l
c.
 Bothaandb
d.
 Noneoft heabove
ANSWER: (
c)Bothaandb
 
Inthestructur
eoffi
beropt
iccabl
e,t
her
efr
act
ivei
ndexofcor
eisal
way
s__
___
__t
he
ref
racti
veindexofcl
addi
ng.
a. 
Lessthan
b. 
Equalto
c. 
Great
erthan
d. 
Noneoft heabove

ANSWER:
(c)Gr
eat
ert
han

Li
nkbudgetconsi stsofcal cul
ati
onof
a)Usefulsignal power
b)Inter
feri
ngnoi sepower
c)Usefulsignal &Interf
eringnoisepower
d)Noneoft hement ioned
ViewAnswer
Answer :c
Explanati
on: Thelinkanaly si
sandit
soutput,t
hel
inkbudgetconsi
stsofcal
cul
ati
onsandt
abul
ati
onsofusef
ulsi
gnal
powerandi nt er
feri
ngnoi sepowerattherecei
ver
.