QM3002M3

N-Ch 30V Fast Switching MOSFETs

General Description Product Summery

The QM3002M3 is the highest performance

trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID
density , which provide excellent RDSON and 30V 18mΩ 28A
gate charge for most of the synchronous buck
converter applications .
Applications
The QM3002M3 meet the RoHS and Green
Product requirement , 100% EAS guaranteed z High Frequency Point-of-Load Synchronous
with full function reliability approved. Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
PRPAK3X3 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline D
z 100% EAS Guaranteed
z Green Device Available

Absolute Maximum Ratings SS SG

Rating
Symbol Parameter 10s Steady State Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 28 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 18 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 11.7 7.4 A
ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 9.4 6 A
2
IDM Pulsed Drain Current 56 A
3
EAS Single Pulse Avalanche Energy 72 mJ
IAS Avalanche Current 21 A
4
PD@TC=25℃ Total Power Dissipation 20.8 W
4
PD@TA=25℃ Total Power Dissipation 4.2 1.67 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

1
RθJA Thermal Resistance Junction-Ambient --- 75 ℃/W
RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 30 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 6 ℃/W

Rev A.03 D070711

1
 QM3002M3
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.022 --- V/℃
VGS=10V , ID=15A --- 16 18
RDS(ON) Static Drain-Source On-Resistance2 mΩ
VGS=4.5V , ID=10A --- 24 30
VGS(th) Gate Threshold Voltage 1.2 1.5 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -5.1 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 19.4 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 5 Ω
Qg Total Gate Charge (4.5V) --- 6.2 8.7
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A --- 2.4 3.4 nC
Qgd Gate-Drain Charge --- 2.5 3.5
Td(on) Turn-On Delay Time --- 3 6.0
Tr Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 7.6 14
ns
Td(off) Turn-Off Delay Time ID=15A --- 20.8 42
Tf Fall Time --- 4 8
Ciss Input Capacitance --- 572 801
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 80 112 pF
Crss Reverse Transfer Capacitance --- 65 91

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A 16 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 28 A
2,6
VG=VD=0V , Force Current
ISM Pulsed Source Current --- --- 56 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time --- 17 --- nS
Qrr Reverse Recovery Charge IF=30A , dI/dt=100A/µs , TJ=25℃ --- 3 --- nC
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

2
 QM3002M3
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source

10

8
IS Source Current(A)

TJ=150℃ TJ=25℃
4

0
0 0.3 0.6 0.9
VSD , Source-to-Drain Voltage (V)

Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics

1.8
1.8
Normalized on resistance

1.4 1.4
Normalized VGS(th)

1 1.0

0.6 0.6

0.2 0.2
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

3
 QM3002M3
N-Ch 30V Fast Switching MOSFETs
1000
100.00
F=1.0MHz
10us
Ciss
10.00
100us
Capacitance (pF)

1ms

ID (A)
100 Coss 1.00 10ms
100ms
DC
Crss
0.10

TC=25℃
Single Pulse
10 0.01
1 5 9 13 17 21 25 0.1 1 10 100
VDS Drain to Source Voltage (V) VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 SINGLE PULSE PDM
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform