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Course Specification

(Dept. of EEE, IIUC)


Basic Information
Course Title Electronics I
Course Code EEE 2301
Pre-requisite EEE 1201
Credit 3
Academic Session Autumn 2020
Level Basic
Category Major
Number of lectures 45 (18 before Mid-term, 27 after Mid-term)
Professional Information
Overall aim of the course
Rational This course prepares the students with the fundamental ideas, theory and devices of
Electronics and their application in Engineering sector.This course also discussed
advanced concepts in electronics and electronic systems engineering
Including the recent research topics.
Course 1. To give understanding on how current flows through the p-n junction and relating
objective this phenomena to the characteristics and operation of the diodes, bipolar and
field-effect transistors.
2. An understanding of how complex devices such as Semiconductor diodes and
field-effect transistors are modeled and how the models are used in the design and
analysis of useful circuits.
3. Understand the application of different electronic devices and simple circuits.
Course Familiarity with electronic devices and circuits is fundamental to electrical engineering.
Synopsis The material covered here will further develop both in breadth and depth that which was
covered in the preceding courses, with a significant emphasis on developing design skills.
Topics to be covered will include: semiconductor devices, Transistors, FETs, multistage
amplifiers, selected circuits used in communication systems.
Students learning time (Total 135 hours)
a) Face to face 45 hours (lectures including class tests)
b) Independent 90 hours (Library, internet, assignments, home study etc.)
Course Outcomes (COs) of the course
S/N Course Outcomes (COs): Upon the successful completion Corresponding Bloom’s
of the course, students will be able to POs taxonomy
domain/level
CO 1 Knowledge of basic semiconductor devices such as PN
junction and Zener diode, BJT, FET, MOSFET, Cognitive/
PO-01
modelling of diodes, field-effect, and bipolar junction Remembering
transistors, and different amplifier circuits.
CO 2 Problem-solving of different types of electronic circuit
Cognitive/
consisting of diode, BJT, FET, transistor amplifiers as PO-02
Analyzing
discrete and integrated devices.
CO 3 Design and modelling of BJT, FET, MOSFET,
Cognitive/
differential and simple amplifier circuits and their small PO-03
Creatiing
signal, large signal, and frequency response performance.

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Content Outline of the Course
Learning
Topics Reading materials
Hours
Sedra& Smith /
Introduction to Semiconductors : Robert
2
Semiconductors & Doping,The PN Junction and Biasing. L.Boylestad&
LouisNashelsky
Sedra& Smith /
Introduction to Semiconductors :
Robert
Current-voltage characteristics of a PN Junction Diode, 2
simplified dc and ac models of Diode. L.Boylestad&
LouisNashelsky
Sedra& Smith /
Introduction to Semiconductors : Robert
1
Static & dynamic resistance and Junction capacitance. L.Boylestad&
LouisNashelsky
Diode circuits and Applications: Sedra& Smith /
Half-wave and Full-wave Rectifiers V.K Metha
3
Full-Wave Bridge Rectifiers
Filter circuits, Voltage doublerand multiple diode circuits.
Robert
Diode circuits and Applications:
Clippers & Clampers
2 L.Boylestad&
LouisNashelsky
Sedra& Smith /
Diode Applications- Special Purpose Diodes: Robert
1
Zener diode and voltage regulators. L.Boylestad&
LouisNashelsky
Class Test-01 1
Sedra& Smith /
Bipolar Junction Transistors:
Robert
Introduction to BJTs, 1
Transistor Construction and Operation L.Boylestad&
LouisNashelsky
Sedra& Smith /
Bipolar Junction Transistors:
Robert
Input and output characteristics of CB, CE and CC 2
configuration, Load line analysis, operating point. L.Boylestad&
LouisNashelsky

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Sedra& Smith /
Robert
L.Boylestad&
Bipolar Junction Transistors: LouisNashelsky
Transistor as an amplifier, Transistor Biasing and stability 3
factor, Base and Voltage Divider Biasing method.

Mid-Term Examination: 30 marks, Time: 1.5hrs; Should answer any three questions out of four. Each
question will carry 10 marks. There might be two/ three parts in each question.
Single Stage Transistor Amplifier: Sedra& Smith /
2
Transistor equivalent circuits (both D.C and A.C). V.K Metha
Single Stage Transistor Amplifier: Sedra& Smith /
Modeling of Transistor: re-model. Hybrid equivalent Model. Robert
3
Small-signal analysis of BJT: Fixed biased, voltage-divider L.Boylestad&
biased and Emitter-Follower Configuration. Louis Nashelsky
Robert
Differential and multistage amplifiers:
L.Boylestad&
Description of differential amplifiers, Small-signal 2
operation, differential and common mode gains. Louis Nashelsky/
Sedra& Smith
Differential and multistage amplifiers: Sedra& Smith /
RC coupled, Transformer coupled, and Direct 2 V.K. Mehta
Coupled amplifier.
Field-Effect Transistors (FET): Construction and Robert
classification, Principle of operation, Characteristic curves, L.Boylestad&
3
Channel conductivity, Channel ohmic and pinch-off region, Louis Nashelsky/
Characteristic parameters of the FET. V.K. Mehta
Robert
Field-Effect Transistors (FET):
L.Boylestad&
Effect of temperature on FET, Common source amplifier, 2
Common drain amplifier. LouisNashelsky/
V.K. Mehta
Class Test-02 1
Metal Oxide Semiconductor Field Effect
Transistor(MOSFET):
MOSFET as circuit element, structure and physical operation 3
of an enhancement& Depletion MOSFET, threshold voltage, L.Boylestad&
Body effect. LouisNashelsky/
Metal Oxide Semiconductor Field Effect V.K. Mehta
Transistor(MOSFET):
3
Current- voltage characteristics of an enhancement &
Depletion MOSFET, MOSFET as a switch.
Biasing and Application of MOSFET:
L.Boylestad&
Biasing discrete and integrated MOS amplifier circuits. 3 LouisNashelsky/
VMOS, CMOS inverter, UJT. V.K. Mehta

Case Study and Independent Learning 2


Final Examination: 50 marks; Time: 2.5 hrs; Should answer any five questions out of seven. Each
question will carry 10 marks. There may be two/ three parts in each question.

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Facilities required for teaching and learning;
White board, Marker, Laptop, and Multi -Media projector.
Teaching and learning methods
a. Lecture
b. Class Discussion
c. Group discussion
d. Reading Assignment
e. Class Test

Student Assessment Method


a. Attendance
b. Class test and/or assignments
c. Mid term
d. Final Exam
List of References
Text/Reference Title Author
Text Book 1 Microelectronic Circuits Sedra and Smith
Text Book 2 Electronics devices and circuit theory Robert L. Boylestad&
LouisNashelsky
Reference book Solid State electronic device Streetman &Banarjee
Reference book Principle of electronics V.K.Mehta
Reference book Electronics Devices and Circuits J. J. Milman and
C.C.Halkias
Mapping Between Cos and POs
PO 1 PO 2 PO 3 PO 4 PO 5 PO 6 PO 7 PO 8 PO 9 PO 10 PO 11 PO 12
CO 1 √
CO 2 √
CO 3 √
Assessment
Assessment Method Assessment Schedule Marks
Class Test 1 4th week 10
Midterm 7 week
th
30
Assignment 9 week
th
10
Class Test 2 12th week 10
Final exam 16 week
th
50
Course Outcomes (CO) Assessment
Course Outcomes (CO) Assessment Schedule Assessment Method
CO1 4th week Class Test-1/Midterm Exam
CO2 12th week Class Test-2/Midterm/Final
Exam
CO3 9th week Assignment
To achieve a specific outcome of a course, a student has to achieve 60% marks for a CO.

PO1: Engineering Knowledge PO7: Environment and sustainability

PO2: Problem Analysis PO8: Ethics

PO3: Design/ Development of Solution PO9: Individual work and team work

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PO4: Investigation PO10: Communication

PO5: Modern tool usage PO11: Project management and finance

PO6: The Engineer and society PO12: Lifelong learning

Rubrics for Assignments

Category Very Good Good Average Poor

Accuracy All of the answers Most of the Some of the None of the
are correct. answers are answers are answers is correct.
correct. correct.

Timeliness Received in due Received 1 hour Received 2 hour Received more


time late. late. than 2 hours late.

Work Shown Showed all steps Showed most of Showed some of Did not show the
the steps. the steps. steps.

Prepared by: Checked by: Approved by:


______________________ ______________________ _____________________
Md. LokmanHossain Dr. Sikder Sanbeam Islam Dr. Md. Akther Sayed
Lecturer, Associate Professor &Chairman, Dean, FSE, IIUC
Dept. of EEE, IIUC Dept. of EEE, IIUC

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