Electronic Devices and Circuits

EG 2108 EX
Total: 8 hour /week
Year: II Lecture: 4 hours/week
Semester: III Tutorial: 1 hours/week
Lab: 3 hours/week
Course Description:
This course deals with different electronic devices and circuits.

Course Objectives:
On completion of this course the students will be able to:
1 Differentiate between passive and active components.
2 Identify the characteristics of passive and active components.
3 Explain the working principles of various semiconductor devices, relate their
characteristics and applications
4 Explain the characteristics of CB, CE and CC configuration circuits
5 Explain the function of different dc power supplies.
6 Explain the function of JFET, MOSFET
7 Explain the function of SCR, PUT, UJT , special diodes and wave generating circuits
Course Contents:

Units Topics Contents Hours Methods/ Marks

Media
1 History of 2 hrs
1.1 Electron vacuum tubes:
electronic devices 1.2 Diode,
1.3 Triode and Pentode:

2 Basic Passive 2.1 Construction, 4 hrs

Devices: R, C and 2.2 Types,
L: 2.3 Color coding
2.4 Characteristics
3 Semiconductor 3.1 Energy levels, valence and
10 hrs
Diodes: conduction bands, conduction of
electrons and holes.
3.2 Intrinsic and extrinsic
semiconductor devices (Si),
impurities, doping, majority and
minor charge carries in P – type
and N – type materials..
3.3 PN Junction and depletion layer
and potential barrier – definition
and characteristics.
3.4 Forward and reverse biasing of PN
junction diode – The V-I

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Units Topics Contents Hours Methods/ Marks
Media
characteristic, principles of
operation, and effects of
temperature and junction
capacitance.
3.5 Analysis of PN junction diode
circuit: The V-I characteristic and
mathematical expressions with
equivalent model circuit diagrams.
3.6 Operation in the reverse breakdown
region- Zener diode, principles of
operation and IV characteristic.
4 Power Supplies: 4.1 Half wave and full wave rectifiers
6 hrs
– Types, working principles,
characteristics and applications.
4.2 Analysis of simple DC voltage
power supplies – Principles,
characteristics and ripple (voltages)
factors.
4.3 Simple voltage regulation using
Zener diodes – Principles, circuits,
characteristics and application.

5 Bipolar Junction 5.1 The Unbiased Transistor, The

14hrs
Transistors (npn Biased Transistor, Transistor
and pnp) – Types, Currents, The CE Connection, The
construction, base Curve, Collector Curves,
working principle BJT AC Models: Base-Biased
as an amplifier and Amplifier, Emitter-Biased
characteristics: Amplifier, Small Signal operation,
AC Beta, AC Resistance of the
Emitter Diode, Reading Data Sheets
5.2 Other characteristics of BJT – The
load line, operating point,
Saturation and cutoff modes:
Definition, circuits, principles and
characteristics.
5.3 CC and CB Amplifier: CC
Amplifier, Output Impedance,
Cascading CE and CC, Darlington
Connections, Voltage Regulation,
The Common Base amplifier
5.4 Types of amplifier circuits: Class
A, Class B, Class AB and Class C –

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Units Topics Contents Hours Methods/ Marks
Media
Definition, characteristics and
applications.
5.5 Frequency Effects: Frequency
Response of an Amplifier, Decibel
Power gain, Decibel voltage gain,
Impedance matching,

6 Field Effect 6.1 Basic Ideas, Drain Curves, Tran

12hrs
Transistor (JFET conductance Curves, Biasing in
and MOSFETS) – Ohmic Region, Biasing in Active
Types, Region,
construction, 6.2 Saturation, cut off breakdown and
working principles ohmic regions of operation –
as an amplifier and analysis of V-I characteristic
characteristics: curves.
6.3 The Depletion Mode MOSFET,D-
MOSFET Curves, Depletion Mode
MOSFET Amplifier, The
Enhancement Mode MOSFET
6.4 Data Book
7 Special 7.1 UJT, PUT, SCR, Diar and Triac.
12hrs
Semiconductor 7.2 Photo voltaic effects and solar
Devices – Working cells.
principles, 7.3 Photodiode, phototransistor, LED,
functional circuits, LDR, opt couplers and isolators.
characteristics and 7.4 Tunnel diode, schottyky diode,
applications: GaAs Transistors, MOSFET.
7.5 Charge coupled devices, Hall
effects, solid state relay and
thermister.
7.6 Multi vibrators: Generation of
square and triangular wave forms
using 555 IC

Practical: Demonstrate the following tasks: 45 hrs

1 Diode characteristics – PN diode
and Zener diode
2 BJT characteristics – C.E. input
and output characteristics
3 FET characteristics – C.S. input
and output characteristics
4 HW and FW rectifier –
waveforms and characteristics

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Units Topics Contents Hours Methods/ Marks
Media
5 UJT characteristics – IV
characteristics
6 PUT characteristics – IV
characteristics
7 SCR characteristics – IV
characteristics
8 Tunnel diode characteristics – IV
characteristics
9 Photo diode characteristics – IV
characteristics

Reference books:
1. Theraja, B. L. (2010). Basic Electronics: Solid state. New Delhi: S. Chand & Company Ltd.
2. Sharma, S., & Sharma, D. (2010). Electronic principles. New Delhi: S.K. Kataria & Sons
3. Floyd, T. L. (2005). Electronic devices. Upper Saddle River, N.J: Pearson Education.
4. Malvino, A. P., & Bates, D. J. (2016). Electronic principles. New York: McGraw-Hill
Education

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