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Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
TO-220AB
· Low Power Loss, High Efficiency L
Dim Min Max
· High Surge Capability B M
· High Current Capability and Low Forward A 14.22 15.88
Voltage Drop C B 9.65 10.67
D
· For Use in Low Voltage, High Frequency K C 2.54 3.43
Inverters, Free Wheeling, and Polarity A
D 5.84 6.86
Protection Applications
E ¾ 6.35
· Plastic Material: UL Flammability 1 2 3
Classification Rating 94V-0 E
G 12.70 14.73
H 2.29 2.79
G
Mechanical Data J N J 0.51 1.14
Characteristic SBL
Symbol 2030CT SBL SBL SBL SBL SBL Unit
2035CT 2040CT 2045CT 2050CT 2060CT
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 30 35 40 45 50 60 V
DC Blocking Voltage VR
RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V
Average Rectified Output Current
IO 20 A
(Note 1) @ TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load IFSM 250 A
(JEDEC Method)
Forward Voltage Drop @ IF = 10A, TC = 25°C VFM 0.55 0.75 V
Peak Reverse Current @TC = 25°C IRM 1.0
50 mA
at Rated DC Blocking Voltage @ TC = 100°C
Typical Junction Capacitance (Note 2) Cj 650 pF
Typical Thermal Resistance Junction to Case (Note 1) RqJC 2.8 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
10
12
SBL2045CT - SBL2060CT
8
1.0
4
TJ = 25°C
Pulse width = 300µs
2% duty cycle
0 0.1
0 50 100 150 0.1 0.3 0.5 0.7 0.9 1.1
TC, CASE TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Voltage
300 4000
Tj = 25°C
8.3 ms single half-sine-wave
JEDEC method f = 1.0MHz
IFSM, PEAK FORWARD CURRENT (A)
250
150
100
50
0 100
1 10 100 0.1 1.0 10 100
100
IR, INSTANTANEOUS REVERSE CURRENT (mA)
Tj = 100°C
10
Tj = 75°C
1.0
Tj = 25°C
0.1
0.01
0 40 80 120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics