Contents: : GATE Electronics & Communication (3 Volumes) by KANODIA

GATE Electronics & Communication(3 volumes) by KANODIA
Contents:‐
VOLUME- 1
UNIT-1 NETWORKS
1. Basic Concepts
2. Graph Theory
3. Method of Analysis
4. Circuit Theorems
5. Basic RL and RC Circuits
6. The RLC Circuits
7. Sinusoidal Steady State Analysis
8. Circuit Analysis in the s Domain
9. Magnetically Coupled Circuits
10. Two Port Network
11. Frequency Response
12. Gate Solved Questions (1996-2013)
UNIT-2 ELECTRONICS DEVICES

1. Semiconductor in Equilibrium
2. Semiconductor in Non-Equilibrium
3. PN Junction Diode
4. Bipolar Junction Transistor
5. MOSFET
6. JFET
7. Integrated Circuit
8. Gate Solved Questions(1996-2013)
UNIT-3 ANALOG CIRCUITS

1. Diode Circuits
2. BJT Biasing
3. BJT Amplifiers
4. FET Biasing
5. FET Amplifiers
6. Output Stages and Power Amplifiers
7. Op-amp Characteristics and Basic Circuits
8. Op-amp Applications
9. Active Filters
10. Gate Solved Questions
VOLUME- 2
UNIT-4 DIGITAL CIRCUITS
1. Number System and Codes
2. Boolean Algebra and Logic Simplification
3. The K-Map
4. Combinational Circuits
5. Sequential Circuits
6. Logic Families
7. Interfacing to Analog
8. Microprocessor
UNIT-5 SIGNALS & SYSTEMS

1. Continuous Time Signals
2. Continuous Time Systems
3. Discrete Time Signals
4. Discrete Time Systems
5. The Laplace Transform
6. The Z Transform
7. Continuous Time Fourier Transform
8. Discrete Time Fourier Transform
9. Continuous Time Fourier Series
10. Discrete Time Fourier Series
11. Sampling and DFT
UNIT-6 CONTROL SYSTEMS

1. Transfer Functions
2. Stability
3. Time Response
4. Root-Locus Technique
5. Frequency-Domain Analysis
6. Design of Control Systems
7. State Variable Analysis

VOLUME- 3
UNIT-7 COMMUNICATION SYSTEMS
1. Random Variable
2. Random Process
3. Noise
4. Amplitude Modulation
5. Angle Modulation
6. Digital Transmission
7. Information Theory and Coding
8. Spread Spectrum
UNIT-8 ELECTROMAGNETICS
1. Vector Analysis
2. Electrostatics
3. Magnetostatics
4. Maxwell's Equations
5. Electromagnetic Wave Propagation
6. Transmission Lines
7. Waveguides
8. Antennas
9. GATE Solved Questions
UNIT-9 ENGINEERING MATHEMATICS
1. Linear Algebra
2. Differential Calculus
3. Integral Calculus
4. Directional Derivatives
5. Differential Equation
6. Complex Variable
7. Probability & Statistics
8. Numerical Methods
9. GATE Solved Questions
UNIT-10 VERBAL ANALYSIS

1. Synonyms
2. Antonyms
3. Agreement
4. Sentence Structure
5. Spellings
6. Sentence Completion
7. Word Analogy
8. Reading Comprehension
9. Verbal Classification
10. Critical Reasoning
11. Verbal Deduction
UNIT-11 QUANTITATIVE ANALYSIS

1. Number System
2. Surds, Indices and Logarithm
3. Sequences and Series
4. Average, Mixture and Alligation
5. Ratio, Proportion and Variation
6. Percentage
7. Interest
8. Time, Speed & Distance
9. Time, Work & Wages
10. Data Interpretation
11. Number Series
GATE Electronics & Communication by KANODIA (3 volumes), 7th Edition
Sample Chapter
AC 3
BJT AMPLIFIERS
AC 3.1 If the transistor parameter are b = 180 and Early voltage VA = 140 V and it
is biased at ICQ = 2 mA, the value of hybrid-p parameter gm , rp and ro are
respectively
(A) 14 A/V, 2.33 kW, 90 kW
(B) 14 A/V, 90 kW, 233 kW
(C) 77 mA/V, 2.33 kW, 70 kW
(D) 77.2 mA/V, 2.33 kW, 70 kW
Common Data For Q.2-3 :

Consider the circuit shown below. The transistor parameters are b = 120 and
VA = 3.
AC 3.2 The hybrid- p parameter values of gm , rp and ro are

(A) 24 mA/V, 3, 5 kW
(B) 24 mA/V, 5 kW, 3
(C) 48 mA/V, 10 kW, 18.4 kW
(D) 48 mA/V, 18.4 kW, 10 kW
AC 3.3 The small signal voltage gain Av = vo /vs is

(A) - 4.38 (B) 4.38
(C) - 1.88 (D) 1.88
AC 3.4 The nominal quiescent collector current of a transistor is 1.2 mA. If the range of b
for this transistor is 80 # b # 120 and if the quiescent collector current changes
by ! 10 percent, the range in value for rp is
(A) 1.73 kW < rp < 2.59 kW
(B) 1.93 kW < rp < 2.59 kW
(C) 1.73 kW < rp < 2.59 kW
(D) 1.56 kW < rp < 2.88 kW
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AC 76 BJT Amplifiers AC 3
AC 3.5 Voltage gain Av = vC of the given amplifier circuit is

vs
(A) 750 (B) 150

(C) 50 (D) 100
AC 3.6 A transistor with b = 120 is biased with a collector current IC = 1.2 mA. Values
of gm , rp and re respectively are, (Vthernal = 25 mV)
(A) 48 mA/V, 20.6 W, 2.5 kW (B) 48 mA/V, 2.5 kW, 20.6 W
(C) 20.83 mA/V, 20.6 W, 2.5 kW (D) 20.83 mA/V, 2.5 kW, 20.6 W
i n
. c o.
ia
Consider the circuit shown below. The transistor parameter are b = 100 and
VA = 3
o d
w. n
w w
AC 3.7 If Q -point is in the center of the load line and ICQ = 0.5 mA, the values of RC
and VBB are
(A) 10 kW, 0.95 V (B) 10 kW, 1.45 V
(C) 48 kW, 0.95 V (D) 48 kW, 1.45 V
AC 3.8 The small signal parameters gm, rp and ro are

(A) 38.6 mA/V, 3, 5.18 kW (B) 386 mA/V, 5.18 kW, 3
(C) 19.3 mA/V, 3, 5.18 kW (D) 19.3 mA/V, 5.18 kW, 3
AC 3.9 A bipolar amplifier circuit shown below, exhibits the following characteristic

IC = Is exp b VBE l, VT = 25 mV
2VT
If there is no early effect, then voltage gain of the amplifier for a bias current
IC = 1 mA is
(A) 20 (B) 40
(C) 10 (D) 100
AC 3.10 If a resistor is introduced in the emitter of a common-emitter (CE) amplifier then

(A) both input impedance and voltage gain increases
(B) input impedances increases and voltage gain decreases
(C) input impedances decreases and voltage gain increases
(D) both input impedances and voltage gain decreases

The transistor is following amplifiers circuits has parameters b = 100 , rp = 2.5 kW
i n
. c o.
d ia
. n o
AC 3.11
w w
If input impedances of the two circuits are given as R1 and R2 respectively then
(A) R1 = 2.5 kW , R2 = 2.5 kW (B) R1 = 2.5 kW , R2 = 5 kW
AC 3.12
w
(C) R1 = 500 kW , R2 = 50 W (D) R1 = 50 W , R2 = 500 W
Ratio of voltage gain Av 1 /Av 2 for the two circuits is

(A) 2 (B) 0.5
(C) 4 (D) 0.5
AC 3.13 Consider the transistor amplifier circuit shown in figure below. Given that
b = 100, Vthermal = 25 mV and voltage gain Av = 20 . If the transistor is biased
with collector current IC = 1 mA, then value of RC is
(A) 3.2 kW (B) 23 kW

(C) 6.4 kW (D) 2.7 kW

AC 3.14 The transistor in BJT amplifier circuit shown below has b = 60 , ro = 20 kW ,

Vthermal = 26 mV.
The value of output impedance and voltage gain are

(A) 1.98 kW, - 238.27
(B) 20 kW, - 238.27
(C) 22.2 kW, - 23.82
(D) 2.2 kW, - 23.82
AC 3.15 Consider an amplifier circuit shown below. Transistor parameters are given as
b = 100 and Vthermal = 25 mV.
i n
. c o.
d ia
. n o
w w
w
The input impedance and voltage gain respectively are
(A) 0.99 kW, 200
(C) 0.99 kW, - 400
(B) 390 kW, 200
(D) 390 kW, 400
AC 3.16 In the following circuit, voltage drop across RC and RE are equal to 20VT and 4VT
respectively. What is the gain of circuit. (VT is thermal voltage, assume b is high)
(A) - 0.25 (B) - 4

(C) - 5 (D) - 1
AC 3.17 The parameters of the transistor in the circuit shown below are b = 100 and
VA = 100 V.

The small-signal voltage gain Av = vo /vs is

(A) 80 (B) - 80
(C) 40 (D) - 40
AC 3.18 In the circuit shown below the Q -point is in the center of the load line. The
transistor parameters are b = 150 and VA = 3.
i n
. c o.
d ia
. n o
w w
The small-signal voltage gain Av = vo is
(A) - 16.43
vs
(B) - 9.438
w
(C) - 5.75 (D) - 3.94

For the circuit shown below transistor parameters are
b = 100, VBE (ON) = 0.7 V, VA = 80 V
AC 3.19 The input impedance is

(A) 100 kW (B) 25 kW
(C) 22.2 kW (D) 201 kW

AC 3.20 The small signal voltage gain Av = vo is

vs
(A) 0.96 (B) 0.99
(C) 1 (D) 0.90

In the circuit shown below b = 100 and VA = 3.
The small signal voltage gain Av = vo is

i n
o.
AC 3.21
vs
(A) - 1.96
(C) - 4.73
ia . c
(B) - 3.18
(D) - 10.43
AC 3.22
o d
If the total instantaneous E -C voltage is to remain in the range 1 # vEC # 11 V,
the maximum undistorted swing in the output voltage is
w. n
(A) 2.58 V peak to peak
(C) 1.48 V peak to peak
(B) 5.16 V peak to peak
(D) 2.96 V peak to peak
AC 3.23
w w
In the circuit shown below b = 80 and VA = 3
The signal voltage gain Av = vo is

vs
(A) - 166.23 (B) - 47.5
(C) - 61.7 (D) - 114

In the circuit shown below transistor has b = 65 and VA = 75 V.

AC 3.24 The transistor parameters rp and ro are

(A) 2.14 kW, 82.48 kW
(B) 2.14 kW, 95.2 kW
(C) 200 kW, 1 kW
(D) 214 kW, 952 kW
AC 3.25 The small signal trans-conductance Gs = io is

vs
(A) - 303 mA/V
i n
(B) - 30.3 mA/V
(C) - 11.6 mA/V
. c o.
(D) - 116 mA/V
In the following circuit, impedance Rb seen through base of the transistor is
ia
AC 3.26
o d
w. n
w w
(A) 100 W (B) 9.90 W
(C) 502 W (D) 900 W
AC 3.27 For a transistor, parameters are b = 180 and VA = 150 V, and it is biased at
ICQ = 2 mA. if the collector of the transistor is connected to the base terminal,
the small signal resistance re = vce /ic of this two-terminal device is
(A) 12.88 kW
(B) 12.88 W
(C) 2.33 kW
(D) 2.33 W
AC 3.28 The Early voltage of a BJT is VA = 75 V. The minimum required collector current,
such that the output resistance is at least r o = 200 kW, is
(A) 1.67 mA
(B) 5 mA
(C) 0.375 mA
(D) 0.75 mA

AC 3.29 In the common-base stage of fig. shown below, ICQ = 1 mA and b = 75 . The input
resistance is
(A) 45 kW (B) 45 W
(C) 90 kW (D) 90 W

Consider the transistor amplifier circuit shown below. The transistor parameters
are given as b = 100 , VBE (on) = 0.7 V, VA = 3
i n
. c o.
AC 3.30 Current gain Ai = io is
i1
d ia
(A) 0.48
(C) 0.92
. n o (B) 1.00
(D) 0.98
AC 3.31
w w
Voltage gain Av = vo is
vs
(A) 177.1
(C) 50 w (B) 345.2
(D) 384.6

Consider the common Base amplifier shown below. The parameters are gm = 2
mS and ro = 250 kW . Find the Thevenin equivalent faced by load resistance RL
AC 3.32 The thevenin voltage vTH is

(A) 263vi (B) 132vi
(C) 346vi (D) 498vi
AC 3.33 The thevenin equivalent resistance RTH is

(A) 384 kW (B) 697 kW
(C) 408 kW (D) 915 kW


The common-base amplifier is drawn as a two-port in figure shown below. The
parameters are b = 100 , gm = 3 mS, and ro = 800 kW.
AC 3.34 The h -parameter h21 is

(A) 2.46 (B) 0.9
(C) 0.5 (D) 0.67
AC 3.35 The h -parameter h12 is

(A) 3.8 # 10-4 (B) 4.83 # 10-3
(C) 3.8 # 10 4 (D) 4.83 # 103
AC 3.36
i n
Consider an amplifier circuit shown in figure. If the transistors Q1 and Q2 has
o.
parameters gm1, rp1 and gm2, rp2 respectively, then voltage gain Av is
ia . c
o d
w. n
w
(A) w
gm1 rp2
1 + gm 2 rp 2
g r
(B)
gm 2 rp 2
1 + gm 2 rp 2
gm1 rp1
(C) m1 p1 (D)
gm 2 rp 2 1 + gm 2 rp 2

In the given Darlington pair circuit of figure shown below, transistor Q1 and Q2
parameters are b1, rp1 and b 2, rp2 respectively,

AC 3.37 The current gain Ai = io of the circuit is

i1
(A) b1 b 2 (B) b1 + b 2
(C) b1 + b 2 + b1 b 2 (D) b1 + b 2 - b1 b 2
AC 3.38 Input impedance Rin is

(A) rp1 + rp2 (B) rp1 + (1 + b1) rp2
(C) b1 rp1 + b 2 rp2 (D) (1 + b1) rp1 + rp2
AC 3.39 The feedback used in the circuit shown in figure can be classified as
i n
(A) shunt-series feedback
(C) series-shunt feedback
. c o.
(B) shunt-shunt feedback
(D) series-series feedback
AC 3.40
d ia
The trans-conductance gm of the transistor shown in figure is 10 mS. The value
of the input resistance Rin is
. n o
w w
w
(A) 10.0 kW (B) 8.3 kW

(C) 5.0 kW (D) 2.5 kW
AC 3.41 The transistor parameters of Q1 and Q2 of circuit shown in fig are (gm1, rp1) and
(gm1, rp2) respectively.

The Voltage gain Av of the following circuit is

(A) gm1 rp1 (B) gm 2 rp1
(C) gm1 rp2 (D) gm 2 rp2
AC 3.42 In the single-stage transistor amplifier circuit shown in Figure, the capacitor CE
is removed. Then, the ac small-signal mid-band voltage gain of the amplifier
(A) increase (B) decreases

(C) is unaffected (D) drops to zero
i n
o.
Common Data For Q. 43-44
. c
The transistor in the amplifier circuit shown in Figure is biased at IC = 1 mA
ia
Use VT = kT/q = 26 mV, b0 = 200, r b = 0, and r 0 " 3
o d
w. n
w w
AC 3.43 Small-signal mid-band voltage gain vo /vi is
(A) - 8 (B) 38.46
(C) - 6.62 (D) - 1
AC 3.44 What is the required value of CE for the circuit to have a lower cut-off frequency
of 10 Hz
(A) 0.15 mF (B) 1.59 mF
(C) 5 mF (D) 10 mF
***********

SOLUTIONS
AC 3.1 Option (D) is correct.

ICQ
gm = = 2m = 77.2 mA/V
Vt 0.0259
bV b
rp = t = = 180 = 2.33 kW
ICQ gm 77.2m
ro = VA = 140 = 70 kW
ICQ 2m
AC 3.2 Option (B) is correct.
IBQ = 2 - 0.7 = 5.2 m A
250k
ICQ = bIB = (120) (5.2m) = 0.642 mA
ICQ
= 0.624 = 24 mA/V
gm =
Vt 0.0259
i n
bV
rp = t =
ICQ
b
= 120 = 5 kW, ro = 3
gm 24m
. c o.
Option (C) is correct.
ia
AC 3.3
Av =- gm RC a
o d
rp
rp + RB k =
bRC
rp + RB
w. n =- (24m) (4k) b 5k
5k + 250k l
=- 1.88
AC 3.4
w w
Option (D) is correct.
rp =
bVT
ICQ
,
(120) (0.0259)
rp (max) = = 2.88 kW,
1.08m
(80) (0.0259)
rp (min) = = 1.56 kW
1.32m
By DC analysis of the amplifier circuit
IC = IE = 0.5 mA (since b is high)
So, vC = 5 - 7.5 # 0.5 = 1.25 V
gm = IC = 0.5mA = 20 mA/V
VT 25mV
Small signal equivalent circuit

v p =- vi
Output voltage vc is given as
vC =- gm v p # 7.5 = gm vs # 7.5
Av = vC = gm # 7.5 = 20 # 7.5 = 150
vs
gm = IC = 12mA = 48 mA/V
VT 25mV
b 120
rp = = = 2.5 kW
gm 48 # 10-3
re = rp = 2500 = 20.6 W
(b + 1) 121
AC 3.7 Option (A) is correct.
VECQ = 1 VCC = 5 V
2
VECQ = 10 - ICQ RC = 5
& 10 - (0.5 m) RC = 5
RC = 10 kW,
i n
o.
I
IBQ = CQ = 0.5 = 5 mA
b
VEB (ON) + IBQ RB = VBB
100
ia . c
&
o d
0.7 + (5m) (50k) = 0.95 V
AC 3.8
w. n
Option (D) is correct.
gm =
ICQ
Vt
= 0.5 = 19.3 mA/V
0.0259
w w bV
rp = t =
ICQ
(100) (0.0259)
0.5m
= 5.18 kW, ro = 3

IC = Is exp b VBE l
2VT
Transconductance
gm = 2IC = IC
2VBE 2VT
Output impedance
Rout = RC (Since there is no early effect)
Equivalent circuit is
Voltage gain is
vo = g R = IC RC = (1) (1) = 20
m C
vin 2VT (2) (0.025)


CE amplifier with and without emitter resistance are shown in the following
figure
By small signal analysis of the above circuit
i n
Input impedance Rin = rp
. c o.
d ia
. n o
w w
w
Input impedance Rin = [rp + (b + 1)] RE
So, emitter degeneration increases the input impedance of the CE stage
Voltage gain is
Av = gm RC (with no emitter resistance)
-g
Av = 1 m (with emitter resistance)
g + RE
m
So, voltage gain decreases.

For CE configuration given in figure, input impedances calculated in previous
question as
R1 rp = 2.5 kW
R2 = [rp + (1 + b) RE ] = rp + bRE (a b >> 1)
= 2.5 + 100 # 25 = 5 kW

As calculated in previous question
Av1 =- gm RC (without emitter resistance)

gm RC
Av =- (with emitter resistance)
2
[1 + ^ r1 + gm h] RE
p
Av 1 = 1 + b 1 + gm l R E
Av 2 rp
gm
= 1 +b
+ gm l R E (` b = gm rp)
b
= 1 + gm c 1 + 1 m R E (a b >> 1)
b
Av b
So, . 1 + gm R E = 1 + : R E
1
Av 2
rp
= 1 + 100 # 253 = 2
2.5 # 10
For the given amplifier circuit voltage gain can be calculated as
By small signal equivalent circuit
i n
. c o.
d ia
Voltage gain
. n o
Av = vo = vo : vA
w w
From the circuit
vin vA vin
w
and
vA = rp + (b + 1) RE
vin
vo =
rp + (b + 1) RE + RB
- gm RC
vA
1 + b 1 + gm l R E
rp
rp + (b + 1) RE - gm RC rp
Av = :
rp + (b + 1) RE + RB rp + (1 + b) RE
bRC
=- (a gm rp = b)
rp + (b + 1) RE + RB
or, Av = - RC
rp + b + 1 R + RB
b c b m E b
for b >> 1
Av = - RC
1 RB
c gm + R E + b m
RC = Av c 1 + RE + RB m
gm b
Here, b = 100 , RB = 1 kW , RE = 125 W
gm = IC = 1 mA = 1 A/V
VT 25 mV 25

So, RC = 20 b 25 + 125 + 1000 l = 3.2 kW

100
By DC analysis of the circuit
IB = VCC - VBE = 12 - 0.7 = 51.36 mA
RB 220kW
IE = (b + 1) IB = (60 + 1) (51.36) = 3.13 mA
re = VT = 26 mV = 8.31 W
IE 3.13 mA
From small signal analysis (re -model)
Output impedance of the circuit is given as
Zo = ro RC = 20 kW 2.2 kW = 1.98 kW
Voltage gain
-RC ro - 1.98 kW
Av = = =- 238.27
re 8.31 W
AC 3.15 Option (C) is correct.
Bu DC analysis
i n
o.
IB = VCC - VBE = 10 - 0.7 = 25 A
RB 372
IC = bIB = 10 # 25 = 2.5 mA
ia . c
IC
o
2.5 mA
d
re = VT = 25 mV = 10 W
w. n
By equivalent re -model of the amplifier
w w
Input impedance Zi = RB bre = (372 kW) (100 # 10 W)
= (372 kW) 1 kW = 0.99 kW
Voltage gain Av =- RC =- 4 kW =- 400
re 10 W
By small signal analysis of the given circuit, voltage gain
Av =- RC =- RC =- RC IC (b >> 1)
1 RE + VT RE IC + VT
gm + R E IC
b is large, so IC . IE
Av =- RC IC =- - 20VT =- 20 =- 4
RE IE + VT 4VT + VT 5
ICQ = b 100 l (0.35) = 0.347 mA
1001
The small-signal equivalent circuit is as shown below
rp 10k
vp = (vs),
500 + rp 10k
vo =- gm v p (ro 7k)
vo =- gm f
rp 10k
i n
p (ro 7k)
o.
vs 500 + rp 10k
gm
I
Vt
b bV
ia c
= CQ = 0.347m = 13.13 mA/V
.
0.0259
= t = 100 = 7.6 kW
rp =
gm
o d ICQ 13.13m
w. n ro =
b
ICQ
= 100 = 288 kW
0.347m
= 288 # 7 = 6.83 kW
w w ro 7k
rp 10k
288 + 7
= 7.6 # 10 = 4.32 kW
7.6 + 10
Av =- 13.13m b 4.32k l (6.83k) =- 80
500 + 4.32k
DC Analysis : ICQ = IEQ
VCEQ = 5 = 10 - ICQ (RC + RE )
& 5 = 10 - ICQ (1.2k + 0.2k)
& ICQ = 3.57 mA
IBQ = 3.57 = 23.8 mA
150
AC Analysis :

bVt (0.0259)
rp = = (150) = 1.09 kW, ro = 3
ICQ 3.57m
- (bIb) RC
Av = vo = ,
vs vs
vs = Ib rp + (b + 1) RE Ib
- bRC - (150) (1.2) k
Av = = =- 5.75
rp + (1 + b) RE 1.09k + (151) (0.2k)
2.5 - 25 # 103 IBQ - 0.7 - 2 # 103 (b + 1) IBQ = 0
i n
o.
2.5 - 25 # 103 IBQ - 0.7 - 2 # 103 (101) IBQ = 0
1.8 - 227 # 103 IBQ = 0
&
So,
IBQ = 7.92 mA
ia . c
ICQ = bIb = 100 # 7.92 mA = 0.792 mA
Small signal ac analysis
o d
w. n
w w
bVT 100 # 0.026
rp = = = 3.28 kW
ICQ 0.792
ro = VA = 80 . 100 kW
ICQ 0.793
Rib = rp + (1 + b) (ro RE )
= 3.28 + (101) (100 2) = 201 kW
Input impedance
Ri = R1 R2 Rib = 50 50 201 = 22.2 kW

By small signal circuit analysis
(1 + b) (ro RE )
Av = vo = Ri
vs rp + (1 + b) (ro RE ) b Ri + Rs l
(101) (100 2)
= : b 22.2 l = 0.962
3.28 + (101) (100 2) 22.2 + 0.5


DC Analysis :
VTH = 50 (12) = 10 V
10 + 50
RTH = 11 50 = 8.33 kW
IBQ = 12 - 0.7 - 10 = 11.9 mA

8.33k + (101) 1k
ICQ = bIBQ = 1.19 mA, IEQ = 1.2 mA
VBCQ = 12 - (1.20) 1 - (1.19) 2 = 8.42 V
AC Analysis :
i n
bV
rp = t =
ICQ
(100) (0.0259)
1.19m
. c o.
= 2.18 kW
ia
vo = bIb (2k), vs =- (b + 1) Ib (1k) + Ib (rp)
d
. n o
Av = vo =
- b (2k)
vs rp + (b + 1) 1k
=
- (100) (2k)
2.18k + (100) (1k)
=- 1.96
AC 3.22
w w
Option (B) is correct.
VECQ = 8.42 V,
w
For 1 # vEC # 11 V,
3 vEC = 11 - 8.42 = 2.58 V
& Output voltage swing = 5.16 V peak to peak.
If VA = 3, small signal voltage gain is
brp
Av =- gm a rp k . _RC RL i =- . (RC RL)
rp + Rs rp + Rs
RC = 3.71 kW , Rs = 2 kW , RL = 10 kW
bVT
rp =
ICQ

9 - 11 (b + 1) IBQ - 0.7 - 2IBQ = 0

8.3 - (11 # 81) IBQ - 2IBQ = 0
893IBQ = 8.3 & IBQ = 0.00929 mA
ICQ = bIBQ = 0.743 mA
So, rp = 80 # 0.026 = 2.79 kW

0.743
b 80
Av =- (R R ) =- (3.71 10)
rp + Rs C L (2.79 + 2)
=- 80 # 2.85 =- 47.4
4.79
DC values in the circuit
IEQ = 0.80 mA,
IEQ
So, IBQ = = 0.80 = 0.0121 mA
(b + 1) (65 + 1)
b
ICQ = I = 65 (0.80) = 0.788 mA
b + 1 E 66
i n
o.
bV 65 (0.026)
rp = T = = 2.14 kW
ICQ 0.788
ro = VA = 75 = 95.2 kW
ICQ 0.788
ia . c
o d
By small signal ac analysis of the amplifier circuit (short all the capacitors)
w. n
w w
(ro 2.54 kW)
Output current io =- gm v p
(ro 2.54 kW) + 4 kW
gm (ro 2.54 kW)
a v p =- vs Gs = io =-
vs (ro 2.54 kW) + 4 kW
gm = 0 . 788 = 30.3 mA/V
0.026
(95.2 2.54)
So, Gs = io =- (30.3) =- 11.6 mA/V
vs 95.2 2.54 + 4

Input impedance through base is given as

b
Rb = rp =
gm
gm = IC
VT
bVT
So, Rb = rp =
IC
By DC analysis
IE = 10 mA, IC = aIE
b
a = = 0.955
b+1
IC = (0.995)(10 mA) = 9.95 mA
(200) (25 mV)
So, Rb = rp = = 502 W
(9.95 mA)
Since the B-C junction is not reverse biased, the transistor continues to operate
in the forward-active-mode
i n
. c o.
d ia
. n o
r = vce = 1 , So rp b 1 l ro
gm vce gm gm
w w rp =
(100) (0.0259)
2m
= 2.33 kW
w I
gm = CQ = 2m = 77.2 mA/V
Vt 0.0259
1 = 12.95 , r = VA = 150 = 75 kW
o
gm ICQ 2m
re = (2.33k) 12.95 (75k) = 12.87 W

ro = VA
ICQ
& ICQ = VA = 75 = 0.375 mA
ro 200k
The circuit is as shown below

bVt 75 (0.0259)
rp = = = 1.94 kW
ICQ 1m
vi = Ib (rp + 1.5k), Iin = Ie (b + 1) Ib
(r + 1.5k)
Rin = Vi = p
Ie (b + 1)
= 1.94 + 1.5k = 45 W
76
IEQ = 10 - 0.7 = 0.93 mA

(10k)
b
I = 100 0.93 = 0.921 mA
i n
o.
ICQ = c
b + 1 m EQ 101 #
bV
rp = T =
ICQ
(100) (0.026)
0.921
. c
= 2.82 kW
ia
I
VT
o d
gm = CQ = 0.921 = 35.42 mA/V
0.026
w. n
By small signal ac analysis of the circuit
w w
io = gm v p
Apply KCL at emitter
i1 = v p + v s + g m v p (a v p = vs)
rp RE
i1 = v s + g m v s = v s e 1 + g m o
RE rp RE rp
Current gain
g m vs gm (RE rp)
Ai = io = =
i1 1 + gm (RE rp)
vs e 1 + g m o
RE rp
(35.42) (10 kW 2.82 kW)
= = 0.98
1 + (35.42) (10 kW 2.82 kW)


From small signal ac-equivalent circuit
vC = gm v p RC = gm vs RC {a v p = vs)
Av = vo = gm RC
vs
= (35.42 mA/ V) (5 kW) = 177.1

The equal circuit is shown below
Removing the RL - v p = vi rp
270 + rp
i n
o.
vi rp (1 + gm ro)
vTH =- ro gm v p - v p =
270 + rp
rp =
b
gm
ia
= 100 = 50 kW
2m . c
vTH = i
d
v 50k (1 + (2 m) (250k))
o 270 + 50k
= 498vi
AC 3.33
w. n
Option (A) is correct.
The equivalent small-signal circuit is shown below
w w
Isc = gm v p + v p = 2mv p + v p = 2.004mv p

ro 250k
v p + v p + g v + vi + v pi = 0
m p
rp ro 270
v p + v p + 2mv + vi + v pi = 0
p
50k 250k 270
& v p =- 0.647vi ,
Isc = 1.297 mvi
RTH = vTH = 498vi = 384 kW
Isc 1.297mvi
The equivalent small-signal circuit is shown below

b
rp = = 100 = 3.33 kW
gm 3 m
h21 = i2 , i = v p + gm v p ,
i1 v = 0 2 ro
2
i1 =- v p - v p - v p - gm v p ,
3.9k rp ro
v p can be neglected
ro
- gm - gm rp 3.9k
h21 = i2 = = = 0.91
i1 1 + 1 +g rp + 3.9k + gm rp 3.9k
m
3.9k rp
i n
v1 =- v p ,
v1 + v1 + v1 - v 2 = g v
m p
. c o.
ia
3.9k rp ro
v1 b 1 + 1 + 1 l - v2 =- gm v1
3.9k rp ro ro
o d
w. n v1 =
v2
1
ro
1 + 1 + 1 +g
3.9k rp ro m
w w =
1
800 k
1 + 1 + 1 + 3m
3.9k 33.3k 800k
= 3.8 # 10-4

By small signal equivalent circuit analysis,
In the circuit
gm1 v p1 + vo = gm2 v p 2
rp 2
v p1 = vin , vo =- v p 2
So, gm1 # vin + vo =- gm 2 vo

rp 2

gm1 vin =-bgm 2 + 1 l vo

rp2
Voltage gain
g r
Av = vo = m1 # p2
vin 1 + gm 2 rp2
Small signal equivalent circuit of the Darlington-pair
v p1 = i 1 rp1
i n
o.
So, gm1 v p1 = gm1 rp1 i1 = b1 i1 ...(i) (b1 = gm1 rp1)
v p2 = (i 1 + gm1 v p1) rp2 = (i1 + bi i1) rp2 ...(ii)
Put v p1 and v p2 from

io
eq (i) and (ii) . c
= gm1 v p1 + gm 2 v p2
ia
io
o d
= gm1 rp1 i1 + gm 2 (i1 + b1 i1) rp2
w. n io
io
i1
= b1 i + gm 2 (i 1 + b1 i 1) rp2
= b1 + gm 2 rp2 + gm 2 rp2 b1
w w io
i1
= b1 + b 2 + b1 b 2
So, Ai = io = b1 + b 2 + b1 b 2
i1
From equivalent circuit
vs = v p1 + v p2 = i 1 rp1 + i 1 (1 + b1) rp2
Rin = vs = rp1 + (1 + b1) rp2
i1
The small signal equivalent circuit of given amplifier is shown below. Here the
feedback circuit samples the output voltage and produces a feed back current Ifb
which is in shunt with input signal. So this is a shunt-shunt feedback configuration.


The small signal ac equivalent circuit of given amplifier is as following.
Here RB = (10 kW < 10 kW) = 5 kW

gm = 10 ms
a gm rp = b & rp = 50 = 5 kW
10 # 10 - 3
Input resistance
Rin = RB < rp = 5 kW < 5 kW = 2.5 kW
By small signal ac analysis of the circuit
i n
. c o.
d ia
. n o
w w
a
w vo = v p2 , gm1 v p1 = v p2
v p1 = vin
rp2
So, gm1 vin = v p2 & v p2 = (gm1 rp2) vin

rp2
vo = (gm1 rp2) vin
Av = vo = gm1 rp 2
vin
Equivalent hybrid circuit of given transistor amplifier when RE is by passed is
shown below.
In the circuit
ib = vs ...(1)
hie

vo = hfe ib .RC = hfe . vs .RC

hie
h R
Voltage gain Av = vo = fe C
1
vi hie
Equivalent hybrid circuit when RE is not bypassed by the capacitor.
In the circuit
vs = ib hie + (ib + hfe ib) RE
vs = ib [hie + (1 + hfe) RE ] ...(2)
v0 = hfe ib .RC ...(3)
from equation (2) and (3)
v0 = hfe .RC vs
i n
o.
hie + (1 + hfe) RE
Voltage gain, Av2 = v0 =
vs
. c hfe RC
hie + (1 + hfe) RE
ia
Av1 = hie + (1 + hfe) RE = 1 + (1 + hfe) RE
So
Av2
o dhie hie
AC 3.43
w. n
Option (C) is correct.
Av < Av
2 1
w
Small signal circuit is (mid-band frequency range)
w
CE " 0 , for mid-band frequencies
vo =- gm vp RC
In the input loop
vp = vi rp
RB + rp
- gm RC rp vi
So, vo =
RB + rp
- gm rp RC
Gain Av = vo =
vi RB + rp
Trans-conductance
(1 mA)
gm = IC = = 1 A/V
VT (26 mV) 26
b
gm rp = b0 & rp = 0 = 200 # 26 = 5.2 kX
gm

- 200 # (1 kW)
So gain Av = =- 6.62
(25 kW + 5.2 kW)
Cut off frequency due to CE is obtained as
f0 = 1
2pReq CE
Req " Equivalent resistance seen through capacitor CE
i n
. c o.
d
Req = RE < RB + rp = iaRE (RB + rp)
So
. n f0 = o RE + RB + rp
1 (RE + RB + rp)
= 10 Hz (given)
So,
w w CE =
2pRE (RB + rp) CE
(0.1 + 25 + 5.2) # 103
= 1.59 mF
w 2p # 0.1 (25 + 5.2) # 106
***********


Contents: : GATE Electronics & Communication (3 Volumes) by KANODIA

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Contents: : GATE Electronics & Communication (3 Volumes) by KANODIA

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GATE Electronics & Communication(3 volumes) by KANODIA

UNIT-2 ELECTRONICS DEVICES

UNIT-3 ANALOG CIRCUITS

UNIT-5 SIGNALS & SYSTEMS

UNIT-6 CONTROL SYSTEMS

UNIT-9 ENGINEERING MATHEMATICS

UNIT-10 VERBAL ANALYSIS

UNIT-11 QUANTITATIVE ANALYSIS

Common Data For Q.2-3 :

AC 3.2 The hybrid- p parameter values of gm , rp and ro are

AC 3.3 The small signal voltage gain Av = vo /vs is

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AC 3.5 Voltage gain Av = vC of the given amplifier circuit is

(A) 750 (B) 150

AC 3.8 The small signal parameters gm, rp and ro are

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AC 3.10 If a resistor is introduced in the emitter of a common-emitter (CE) amplifier then

Common Data For Q.11-12 :

Ratio of voltage gain Av 1 /Av 2 for the two circuits is

(A) 3.2 kW (B) 23 kW

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AC 3.14 The transistor in BJT amplifier circuit shown below has b = 60 , ro = 20 kW ,

The value of output impedance and voltage gain are

(A) - 0.25 (B) - 4

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The small-signal voltage gain Av = vo /vs is

Common Data For Q.19-20 :

AC 3.19 The input impedance is

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AC 3.20 The small signal voltage gain Av = vo is

Common Data For Q.21-22 :

The small signal voltage gain Av = vo is

The signal voltage gain Av = vo is

Common Data For Q.24-25 :

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AC 3.24 The transistor parameters rp and ro are

AC 3.25 The small signal trans-conductance Gs = io is

In the following circuit, impedance Rb seen through base of the transistor is

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Common Data For Q.30-31 :

Common Data For Q.32-33 :

AC 3.32 The thevenin voltage vTH is

AC 3.33 The thevenin equivalent resistance RTH is

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Common Data For Q.34-35 :

AC 3.34 The h -parameter h21 is

AC 3.35 The h -parameter h12 is

Common Data For Q.38-39 :

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AC 3.37 The current gain Ai = io of the circuit is

AC 3.38 Input impedance Rin is

(A) 10.0 kW (B) 8.3 kW

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The Voltage gain Av of the following circuit is

(A) increase (B) decreases

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AC 3.1 Option (D) is correct.

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AC 3.9 Option (A) is correct.

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AC 3.10 Option (B) is correct.

By small signal analysis of the above circuit

So, voltage gain decreases.