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Relay Drive, DC/DC Converter and Motor Drive Applications: Absolute Maximum Ratings
Relay Drive, DC/DC Converter and Motor Drive Applications: Absolute Maximum Ratings
2SJ668
Relay Drive, DC/DC Converter and Motor Drive
Unit: mm
Applications 6.5 ± 0.2
1.5 ± 0.2
5.2 ± 0.2 0.6 MAX.
z 4 V gate drive
z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
5.5 ± 0.2
z High forward transfer admittance: |Yfs| = 5.0 S (typ.)
1.2 MAX.
9.5 ± 0.3
z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
1.1 ± 0.2
z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
0.8 MAX. 0.6 MAX.
1.05 MAX.
Absolute Maximum Ratings (Ta = 25°C) 0.6 ± 0.15
2.3 ± 0.2
1 2 3
0.1 ± 0.1
Characteristic Symbol Rating Unit
DC (Note 1) ID −5 A 1. GATE
1
Drain current 2. DRAIN
Pulse (Note 1) IDP −20 A (HEAT SINK)
3. SOURSE 3
Drain power dissipation (Tc=25°C) PD 20 W
Single pulse avalanche energy
(Note 2)
EAS 40.5 mJ JEDEC ―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω,
IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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Electrical Characteristics (Ta = 25°C)
Switching time RL = 12 Ω ns
Fall time tf — 14 —
VDD ≈ −30 V
Turn-off time toff Duty ≤ 1%, tw = 10 μs — 95 —
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
J668 Part No.
(or abbreviation code)
Please contact your TOSHIBA sales representative for details as to
Lot No. environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
Note 4 of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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2SJ668
ID – VDS ID – VDS
−5 −10
−10 −6 −4. −3.5 Common source −10 −6 −4 Common source
Tc = 25°C Tc = 25°C
−8 Pulse test Pulse test
−8
−4 −8
−3
(A)
(A)
−3.5
ID
ID
−3 −6
−2.8
Drain current
Drain current
−2 −4 −3
VGS = −2.5V
−1 −2
VGS = −2.5 V
0 0
0 −0.4 −0.8 −1.2 −1.6 −2.0 0 −2 −4 −6 −8 −10
VDS
ID
−6 −1.2
Drain-source voltage
25
Drain current
−4 −0.8
−5
−2 −0.4
100 Tc = −55°C −2.5
ID = −1.2 A
0 0
0 −1 −2 −3 −4 −5 0 −4 −8 −12 −16 −20
Drain-source ON-resistance
0.4
10 Tc = −55°C
RDS (ON) (Ω)
Forward transfer admittance
0.3
100
25 0.2 −4 V
1
0.1 0
−0.1 −1 −10 −100 0 −2 −4 −6 −8 −10
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2SJ668
(A)
Pulse test
Drain−source ON-resistance
0.3 ID = −5 A −3
IDR
RDS (ON) (Ω)
−2.5
−2.5
−1.2
0.1
VGS = −10 V
0 0.1
−80 −40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2
Capacitance – VDS
10000 Vth − Tc
Common source
−2.0
VGS = 0 V Common source
Vth (V)
VDS = −10 V
f = 1 MHz
ID = 1 mA
(pF)
−1.2
Capacitance
−0.8
100 Coss
−0.4
Crss
10 0
−0.1 −1 −10 −100 −80 −40 0 40 80 120 160
Dynamic input/output
PD − Tc characteristics
40 −50 −25
VDS Common source
(W)
(V)
(V)
ID = −5 A
−40 −20
Ta = 25°C
VGS
VDS
PD
30
Pulse test
Drain power dissipation
−30 −15
Gate-source voltage
Drain-source voltage
20
10 VDD = −48 V
−10 −5
VGS
0 0 0
0 40 80 120 160 200 0 5 10 15 20 25 30
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rth − tw
10
1
rth (t)/Rth (ch-c)
Duty = 0.5
0.2
Single Pulse
0.1 PDM
0.1
t
0.05
0.02 T
0.01
Duty = t/T
Rth (ch-c) = 6.25°C/W
0.01
10 μ 100 μ 1m 10 m 100 m 1 10
ID max (pulsed) * 40
Drain current ID (A)
−10 1 ms * 100 μs *
ID max (continuous) 30
DC operation
Tc = 25°C 20
−1
*: Single nonrepetitive pulse
Tc = 25°C 10
Curves must be derated
linearly with increase in
temperature. VDSS max 0
−0.1 25 50 75 100 125 150
−0.1 −1 −10 −100
Channel temperature (initial) Tch (°C)
Drain-source voltage VDS (V)
BVDSS
0V
IAR
−15 V
VDD VDS
RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = −25 V, L = 2.2 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠
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