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DATA SHEET
TDA1576
FM/IF amplifier/demodulator circuit
Product specification 1998 Nov 18
Supersedes data of March 1985
File under Integrated Circuits, IC01
Philips Semiconductors Product specification
ORDERING INFORMATION
TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
TDA1576 DIP18 plastic dual in-line package; 18 leads (300 mil) SOT102-1
1998 Nov 18 2
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BLOCK DIAGRAM
Philips Semiconductors
FM/IF amplifier/demodulator circuit
+
560 750
L(2) Ω 0.1 µF
33
pF 10 Ω 47 µF
pF
33 VP
pF CPS
IF1 IF2 RES2 RES1 (15 V)
3 7 6 4 1 2
VFB1 17 25 kΩ
15 kΩ 15 kΩ
25 kΩ 8.3 kΩ
RS 0.1
µF AFC
ViIF VilF 15 voltage
5.5
+ −
kΩ
0.1 µF 4-STAGE
LIMITER/ 250 QUADRATURE
MUTING
Ω DEMODULATOR
RS VFB2 16 AMPLIFIER
3.7 3.7
kΩ kΩ
0.1
(3.3 kΩ)
µF 8
VoAF
VS VoAF1
C8-9(1)
9
LEVEL VoAF2
DETECTOR TDA1576
Z8-10 Z9-10
3
1.7 V
DETUNE (240 (180
INDICATOR STANDBY INTERNAL
DETECTOR kΩ) kΩ)
DRIVER SWITCH POWER
4V SUPPLY G
(6 VBE)
I11 =
5.3 V
20 kΩ 0.5 mA 10 Vi(det)
(185 VT)
13 14 5 12 11 18
VF VF0 FMON Vref Vo(det) GND
3.6 kΩ 220 kΩ
Product specification
TDA1576
(1) For 50 µs de-emphasis: C8−9 = 6.8 nF; for stereo operation C8−9 = 56 pF.
(2) L = 0.38 µH; Qo = 70; QL = 20; adjusted to minimum 2nd harmonic distortion (d2); at Vi = 1 mV; coil: 6 turns CuL (0.25 mm) on coil former KAN (C).
PINNING
1998 Nov 18 4
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
VP supply voltage (pin 1) 0 23 V
V2 voltage on pin 2 0 VP V
V5, 14 voltage on pins 5 and 14 0 23 V
V12 voltage on pin 12 0 7 V
V13 voltage on pin 13 0 6 V
Ptot total power dissipation 0 800 mW
Tstg storage temperature −55 +150 °C
Tamb operating ambient temperature −30 +80 °C
THERMAL CHARACTERISTICS
1998 Nov 18 5
Philips Semiconductors Product specification
CHARACTERISTICS
VP = 7.5 to 20 V; fIF = 10.7 MHz; RS = 60 Ω; fm = 400 Hz with ∆f = ±22.5 kHz; 50 µs de-emphasis (C8−9 = 6.8 nF);
Tamb = 25 °C and measurements taken in Fig.1; unless otherwise specified. The demodulator circuit is adjusted at
minimum second harmonic distortion for ViIF = 1 mV and a deviation ∆f = ±75 kHz.
1998 Nov 18 6
Philips Semiconductors Product specification
1998 Nov 18 7
Philips Semiconductors Product specification
MGE459 MGE460
30 150
handbook, halfpage handbook, halfpage
QL = 30
IP Vo
(mA) (mV) 20
20 100
typ
10
10 50
0 0
0 10 20 0 10 20
VP (V) VP (V)
MGE461
1.5
handbook, halfpage
QL = 30
THD
(%)
1 20
0.5 10
0
0 ±50 ∆f (kHz) ±100
1998 Nov 18 8
Philips Semiconductors Product specification
MGE462
40
handbook, full pagewidth
Vo
(dB)
∆f =
20
±75 kHz
±40 kHz
0
S+N ±15 kHz
−20
−40
−60
−80
1 10 102 103 104 105 106
Vi (µV)
Fig.6 AF output voltage level as a function of IF input voltage; VP = 15 V; fm = 400 Hz; B = 250 Hz to 16 kHz;
QL = 20; C8−9 = 6.8 nF.
MGE463
4
handbook, full pagewidth
V13 V14 = 0 V
(V)
3 I14 = 0 V
V
=1
V 14
2
V
=2
V 14
V
1 =3
V 14
0
1 10 102 103 104 105 106
Vi (µV)
Fig.7 Voltage at field strength indicator output (proportional to V12); R13 = 3.6 kΩ.
1998 Nov 18 9
Philips Semiconductors Product specification
MGE464 MGE465
20 20
handbook, halfpage handbook, halfpage
αVo αVo
(dB) (dB) FM on
0 0
−20 −20
−40 −40
−60 −60
FM off
−80 −80
0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4
V11 (V) V5 (V)
MGE466
6
handbook, full pagewidth
V11
(V)
5
R8-10 = 0
4 R8-10 = 240 kΩ
R9-10 = 180 kΩ
3 (1)
0
−300 −200 −100 0 +100 +200 +300
∆f (kHz)
1998 Nov 18 10
Philips Semiconductors Product specification
6
39 pF
7 MGE457
9 8 33 pF
C8-9
VoAF
Adjustment of the demodulator circuit is obtained with an IF signal which is higher than the 3 dB limiting level; L2 should be short-circuited or detuned;
L1 should be adjusted to minimum d2 distortion, and then L2 to minimum d2 distortion.
(1) Coil data: L1 = L2 = 0.38 µH; Qo = 70; coil former KAN (C).
Fig.11 An example of the TDA1576 when using a demodulator with two tuned circuits.
MGE467
0.3
handbook, full pagewidth
THD
(%)
0.2
0.1
Fig.12 Total harmonic distortion as a function of detuning; fm = 400 Hz; C8−9 = 6.8 nF; ∆f = ±75 kHz; Vo = 330 mV
for a frequency deviation ∆f = ±75 kHz.
1998 Nov 18 11
Philips Semiconductors Product specification
APPLICATION INFORMATION
FM/IF R5 R6
input 1 mA A 4.7
VF kΩ 220 kΩ
Vi
Vref detune
(RS)
voltage
C8 R3
3.6 kΩ
C4 C6
1 nF
C3 0.1 µF 0.1 µF
R4 C10
0.1 µF 10 0.47
RS kΩ µF
18 17 16 15 14 13 12 11 10
R9
TDA1576 180 kΩ
R10
1 2 3 4 5 6 7 8 9 240 kΩ
VP
C5 C11(1)
C7 C9
C1 R1 C2
0.1 µF 10 Ω 47 µF
33 pF 560 pF 33 pF
R2
R7 R8
750 Ω 3.3 kΩ 3.3 kΩ
C12
L
0.38 µH
FM on
+ AFC
voltage VoAF
MGE458
(1) For mono C11 = 6.8 nF; for stereo C11 = 56 pF.
1998 Nov 18 12
Philips Semiconductors Product specification
PACKAGE OUTLINE
D ME
seating plane
A2 A
A1
L
c
Z e w M
b1
(e 1)
b b2
18 10 MH
pin 1 index
E
1 9
0 5 10 mm
scale
UNIT
A A1 A2
b b1 b2 c D (1) E (1) e e1 L ME MH w Z (1)
max. min. max. max.
1.40 0.53 1.40 0.32 21.8 6.48 3.9 8.25 9.5
mm 4.7 0.51 3.7 2.54 7.62 0.254 0.85
1.14 0.38 1.14 0.23 21.4 6.20 3.4 7.80 8.3
inches 0.055 0.021 0.055 0.013 0.86 0.26 0.15 0.32 0.37
0.19 0.020 0.15 0.10 0.30 0.01 0.033
0.044 0.015 0.044 0.009 0.84 0.24 0.13 0.31 0.33
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
93-10-14
SOT102-1
95-01-23
1998 Nov 18 13
Philips Semiconductors Product specification
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING WAVE
DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
1998 Nov 18 14
Philips Semiconductors Product specification
DEFINITIONS
1998 Nov 18 15
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Printed in The Netherlands 545102/750/02/pp16 Date of release: 1998 Nov 18 Document order number: 9397 750 04822