MCC



omponents
21201 Itasca Street Chatsworth
MBR10150CT

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Features 10 Amp High Voltage

• High Junction Temperature Capability Power Schottky
• Good Trade Off Between Leakage Current
And Forward Volage Drop Barrier Rectifier
• Low Leakage Current
150Volts
Maximum Ratings
• Operating J unction Temperature : 150°C
• Storage Temperature: - 50°C to +150°C TO-220AB
• Per d iode Thermal Resistance 4°C/W Junction to Case
• Total Thermal Resistance 2.4°C/W Junction to Case B L
M
MCC Maximum Maximum Maximum C
D
Catalog Recurrent RMS DC
Number Peak Reverse Voltage Blocking K A
Voltage Voltage PIN
E
MBR 10150 CT 150 V 105V 150 V 1 3

G
I J

N
H H
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward IF(AV) 10 A TC = 155 °C PIN 1 PIN 2
Current PIN 3 CASE

Peak Forward Surge IFSM 120A 8.3ms half sine

Current
Maximum


Instantaneous 
Forward Voltage INCHES MM

      
MBR10150CT VF .92V IFM = 5A A .600 .620 15.25 15.75
B .393 .409 10.00 10.40
TJ = 25°C C .104 .116 2.65 2.95
VF .75V I FM = 5A D .244 .259 6.20 6.60
E .356 .361 9.05 9.15
TJ = 125°C F .137 .154 3.50 3.93
G .511 .551 13.00 14.00
H .094 .106 2.40 2.70
I .024 .034 0.61 0.88
J .019 .027 0.49 0.70
K .147 .151 3.75 3.85
Maximum IR 50 µ A TJ = 25°C L .173 .181 4.40 4.60
Reverse Current At M .048 .051 1.23 1.32

Rated DC Blocking 7m A TJ = 125°C N 0.102 t y p. 2.6 t yp .

Voltage

* Pulse Test: Pulse Width380µsec, Duty Cycle 2%

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MBR10150CT MCC
Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient
average forward current (per diode). temperature (δ = 0.5, per diode).

PF(av)(W) IF(av)(A)
5.0 6
δ = 0.2 δ = 0.5
4.5 δ = 0.1 Rth(j-a)=Rth(j-c)

4.0 5
δ = 0.05
3.5 δ=1 4
3.0
Rth(j-a)=15°C/W
2.5 3
2.0
2
1.5 T
T
1.0 1
0.5 IF(av) (A) δ=tp/T tp Tamb(°C)
δ=tp/T tp
0.0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 25 50 75 100 125 150 175

Fig. 3: Non repetitive surge peak forward current Fig. 4: Relative variation of thermal impedance
versus overload duration (maximum values, per junction to case versus pulse duration (per diode).
diode).

IM(A) Zth(j-c)/Rth(j-c)
80 1.0
70
0.8
60
δ = 0.5
50 Tc=50°C 0.6
40
30 Tc=75°C 0.4 δ = 0.2

δ = 0.1
T
20 IM
Tc=125°C
0.2
Single pulse
10 t
t(s) tp(s)
δ=0.5 δ=tp/T tp
0 0.0
1E-3 1E-2 1E-1 1E+0 1E-3 1E-2 1E-1 1E+0

Fig. 5: Reverse leakage current versus reverse Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode) voltage applied (typical values, per diode).

IR(µA) C(pF)
1E+5 200
F=1MHz
Tj=175°C Tj=25°C
1E+4
Tj=150°C 100
1E+3
Tj=125°C

1E+2
50
Tj=75°C
1E+1
1E+0 Tj=25°C
20
1E-1
VR(V) VR(V)
1E-2 10
0 25 50 75 100 125 150 1 2 5 10 20 50 100 200

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 MBR10150CT MCC

Fig. 7: Forward voltage drop versus forward Fig. 8: Thermal resistance junction to ambient
current (maximum values, per diode). versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm)
(STPS10150CG only).

IFM(A) Rth(j-a) (°C/W)

100.0 80
Tj=125°C
Typical values
70
60
10.0 Tj=125°C
50
Tj=25°C
40
1.0 30
20
VFM(V) 10 S(cm²)
0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 14 16 18 20

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