TOSHIBA CCD Linear Image Sensor CCD (Charge Coupled Device)

TCD2919BFG
 TCD2919BFG
TOSHIBA CCD Linear Image Sensor CCD (Charge Coupled Device)

TCD2919BFG

The TCD2919BFG is a high sensitive and low dark current 10680

elements  3 lines output CCD color linear image sensor with 10680
elements  1 line output CCD B/W linear image sensor.
The device contains a row of 10680 elements × 4 lines
photodiodes which provide 48 lines/mm across a A4 size paper. The
device is operated by 3.3 V pulse and 10 V power supply.

Features
 Number of Image Sensing Elements: 10680 elements  3 lines
for Color
10680 elements  1 line for B/W
 Image Sensing Element Size: 2.625 m by 8.4 m on 2.625 m center for Color
2.625 m by 8.4 m on 2.625 m center for B/W
 Photo Sensing Region: High sensitive PN photodiode
 Clock: 2-phase (3.3 V)
 Power Supply Voltage: 10 V (typ.)
 Distanced between Photodiode Array: 31.5 m (12 lines) R array – G array, G array – B array
63 m (24 lines) B array – B/W array
 Internal Circuit: Clamp circuit
 Package: 22 pin CLCC
 Color Filter: Red, Green, Blue

ABSOLUTE MAXIMUM RATINGS (Note 1) Pin Connections (top view)

Characteristic Symbol Rating Unit

SS 1 22 SW1
Clock pulse voltage V
1
1
1
1

C 2 21 1D*
Shift pulse voltage VSH
1B 3 20 OD
Reset pulse voltage VRS 0.3 to +8.0 V
Clamp pulse voltage VCP RS 4 19 OS3

Switch pulse voltage VSW OS2

CP 5 18
0.3 to +13.5
Green

Power supply voltage VOD V

Blue
B/W
Red

SS 6 17 OS1
Operating temperature Topr 0 to 60 °C
Storage temperature Tstg 25 to +85 °C NC 7 16 SS

SW2 8 15 2D
Note 1: All voltages are with respect to SS terminals (ground).
None of the ABSOLUTE MAXIMUM RATINGS must be exceeded, 2A 9 14 1D
even instantaneously.
If any one of the ABSOLUTE MAXIMUM RATINGS is exceeded, 1A 10 13 SH3
10680
10680
10680

10680

the electrical characteristics, reliability and life time of the device

SH1 11 12 SH2
cannot be guaranteed. If the ABSOLUTE MAXIMUM RATINGS are
exceeded, the device can be permanently damaged or degraded.
Create a system design in such a manner that any of the
ABSOLUTE MAXIMUM RATINGS will not be exceeded under any
circumstances.

© 2017 1 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Circuit Diagram
OD SW1 SW2 1D* SS 2D 1D
20 22 8 21 16 15 14

Clamp CCD analog shift register 1

13 SH3
Shift gate 1

S10679
S10680
D12
D13
D14
D15

D62
D63

D64
D65

D74
D75
…Photodiode…

S1
S2
…… …
(B/W)
12 SH2
Shift gate 2

Clamp CCD analog shift register 2

CCD analog shift register 1

Shift gate 1
OS1

S10679
S10680
D24
D25
D26
D27

D74
D75

D76
D77

D88
D89
…Photodiode…
S1
S2

17 Clamp …… …
(Blue)

Shift gate 2
CCD analog shift register 2

CCD analog shift register 3

CCD ANALOG SHIFT REGISTER 3
Shift gate 3
OS2
S10679
S10680
D24
D25
D26
D27

D74
D75

D76
D77

D88
D89

…Photodiode…
S1
S2

18 Clamp …… … 11 SH1
(Green)

Shift gate 4
CCD analog shift register 4

10 1A

9 2A

CCD analog shift register 5

Shift gate 5
OS3
S10679
S10680
D24
D25
D26
D27

D74
D75

D76
D77

D88
D89

…Photodiode…
S1
S2

19 Clamp …… …
(Red)

Shift gate 6
CCD analog shift register 6

1 5 4 3 2 6
SS CP RS 1B C SS
© 2017 2 Rev.1.5 2019-01-08
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 TCD2919BFG
Pin Names
Pin No. Symbol Name Pin No. Symbol Name

1 SS Ground 22 SW1 Switch gate 1 for color or B/W

2 C Last stage transfer clock for Color 21 1D* Last stage transfer clock (phase 1) for B/W
3 1B Last stage transfer clock (phase 1) for color 20 OD Power
4 RS Reset gate 19 OS3 Output signal 3 (Red)
5 CP Clamp gate 18 OS2 Output signal 2 (Green or B/W)
6 SS Ground 17 OS1 Output signal 1 (Blue or B/W)
7 NC Non connection 16 SS Ground
8 SW2 Switch gate 2 for Hi/Lo amplifier gain 15 2D Transfer clock (phase 2) for B/W
9 2A Transfer clock (phase 2) for color 14 1D Transfer clock (phase 1) for B/W
10 1A Transfer clock (phase 1) for color 13 SH3 Shift gate 3 for B/W
11 SH1 Shift gate 1 for color 12 SH2 Shift gate 2 for B/W

Arrangement of 1st Effective Pixel (S1)

2.625 m

S1

B/W photo diode array

8.4 m 1 2 3 4 5 6 7 8
(10680 pixels  1 line)

63 m ( 2.625 m  24 lines)

S1

Blue photo diode array

8.4 m 1 2 3 4 5 6 7 8
(10680 pixels  1 line)

S1 31.5 m ( 2.625 m  12 lines)

Green photo diode array

8.4 m 1 2 3 4 5 6 7 8
(10680 pixels  1 line)

S1 31.5 m ( 2.625 m  12 lines)

Red photo diode array

8.4 m 1 2 3 4 5 6 7 8
(10680 pixels  1 line)
2.625 m

© 2017 3 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Optical/Electrical Characteristics (Color 600 dpi, High Gain Mode)
Ta  25°C, VOD  10 V, V  VSH  VRS  VCP  3.3 V (pulse), f  2.5 MHz, fRS  5.0 MHz,
tINT (integration time)  11 ms, light source  A light source  CM500S (t  1.0 mm)

Characteristics Symbol Min Typ. Max Unit Note

Red RR 17.1 24.5 31.8

Sensitivity Green RG 18.7 26.7 34.7 V/lxs (Note 2)
Blue RB 11.1 15.9 20.7
PRNU (1)  10 20 % (Note 3-1)
Photo response non uniformity
PRNU (3)  3 12 mV (Note 4)
Saturation output voltage VSAT 2.0 2.2  V (Note 6)
Saturation exposure SE 0.06 0.08  lxs (Note 7)
Total transfer efficiency TTE 92 99  % 
Output impedance ZO  66 250  
Random noise ND  1.9  mV (Note 11)

Optical/Electrical Characteristics (Color 600 dpi, Low Gain Mode)

Ta  25°C, VOD  10 V, V  VSH  VRS  VCP  3.3 V (pulse), f  2.5 MHz, fRS  5.0 MHz,
tINT (integration time)  11 ms, light source  A light source  CM500S (t  1.0 mm)

Characteristics Symbol Min Typ. Max Unit Note

Red RR 11.6 16.6 21.6

Sensitivity Green RG 12.6 18.0 23.4 V/lxs (Note 2)
Blue RB 7.5 10.6 13.8
PRNU (1)  10 20 % (Note 3-2)
Photo response non uniformity
PRNU (3)  3 12 mV (Note 4)
Saturation output voltage VSAT 1.7 1.9  V (Note 6)
Saturation exposure SE 0.07 0.11  lxs (Note 7)
Total transfer efficiency TTE 92 99  % 
Output impedance ZO  66 250  
Random noise ND  1.3  mV (Note 11)

© 2017 4 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Optical/Electrical Characteristics (Color 1200 dpi, High Gain Mode)
Ta  25°C, VOD  10 V, V  VSH  VRS  VCP  3.3 V (pulse), f  2.5 MHz, fRS  5.0 MHz,
tINT (integration time)  11 ms, light source  A light source  CM500S (t  1.0 mm)

Characteristics Symbol Min Typ. Max Unit Note

Red RR 8.6 12.2 15.9

Sensitivity Green RG 9.4 13.4 17.4 V/lxs (Note 2)
Blue RB 5.6 7.9 10.3
PRNU (1)  10 20 % (Note 3-3)
Photo response non uniformity
PRNU (3)  3 12 mV (Note 4)
Register imbalance RI  1.3  % (Note 5)
Saturation output voltage VSAT 1.00 1.42  V (Note 6)
Saturation exposure SE 0.06 0.11  lxs (Note 7)
Dark signal voltage VDRK  0.6 2.0 mV
(Note 8)
Dark signal non uniformity DSNU  4.2 10.0 mV
DC power dissipation PD  432 578 mW (Note 9)
Total transfer efficiency TTE 92 99  % 
Output impedance ZO  66 250  
DC output signal voltage VOS 4.0 5.0 6.0 V
(Note 10)
Reset noise VRSN  0.4  V
Random noise ND  2.1  mV (Note 11)

Optical/Electrical Characteristics (Color 1200 dpi, Low Gain Mode)

Ta  25°C, VOD  10 V, V  VSH  VRS  VCP  3.3 V (pulse), f  2.5 MHz, fRS  5.0 MHz,
tINT (integration time)  11 ms, light source  A light source  CM500S (t  1.0 mm)

Characteristics Symbol Min Typ. Max Unit Note

Red RR 5.8 8.3 10.8

Sensitivity Green RG 6.3 9.0 11.7 V/lxs (Note 2)
Blue RB 3.7 5.3 6.9
PRNU (1)  10 20 % (Note 3-4)
Photo response non uniformity
PRNU (3)  3 12 mV (Note 4)
Register imbalance RI  1.1  % (Note 5)
Saturation output voltage VSAT 0.85 0.95  V (Note 6)
Saturation exposure SE 0.07 0.11  lxs (Note 7)
Dark signal voltage VDRK  0.4 2.0 mV
(Note 8)
Dark signal non uniformity DSNU  2.8 10.0 mV
DC power dissipation PD  418 578 mW (Note 9)
Total transfer efficiency TTE 92 99  % 
Output impedance ZO  66 250  
DC output signal voltage VOS 3.9 4.9 5.9 V
(Note 10)
Reset noise VRSN  0.4  V
Random noise ND  1.3  mV (Note 11)

© 2017 5 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Optical/Electrical Characteristics (B/W 1200 dpi, High Gain Mode)
Ta  25°C, VOD  10 V, V  VSH  VRS  VCP  3.3 V (pulse), f  5.0 MHz, fRS  5.0 MHz,
tINT (integration time)  11 ms, light source  A light source  CM500S (t  1.0 mm)

Characteristics Symbol Min Typ. Max Unit Note

Sensitivity RB/W 25.8 36.8 47.9 V/lxs (Note 2)

PRNU (1)  10 20 % (Note 3-1)
Photo response non uniformity
PRNU (3)  3 12 mV (Note 4)
Saturation output voltage VSAT 2.0 2.2  V (Note 6)
Saturation exposure SE 0.04 0.06  lxs (Note 7)
Dark signal voltage VDRK  1.1 2.0 mV
(Note 8)
Dark signal non uniformity DSNU  4.5 10.0 mV
DC power dissipation PD  407 578 mW (Note 9)
Total transfer efficiency TTE 92 99  % 
Output impedance ZO  66 250  
DC output signal voltage VOS 4.0 5.0 6.0 V
(Note 10)
Reset noise VRSN  0.4  V
Random noise ND  1.8  mV (Note 11)

Optical/Electrical Characteristics (B/W 1200 dpi, Low Gain Mode)

Ta  25°C, VOD  10 V, V  VSH  VRS  VCP  3.3 V (pulse), f  5.0 MHz, fRS  5.0 MHz,
tINT (integration time)  11 ms, light source  A light source  CM500S (t  1 mm)

Characteristics Symbol Min Typ. Max Unit Note

Sensitivity RB/W 17.3 24.7 32.1 V/lxs (Note 2)

PRNU (1)  10 20 % (Note 3-1)
Photo response non uniformity
PRNU (3)  3 12 mV (Note 4)
Saturation output voltage VSAT 1.7 1.9  V (Note 6)
Saturation exposure SE 0.05 0.07  lxs (Note 7)
Dark signal voltage VDRK  0.7 2.0 mV
(Note 8)
Dark signal non uniformity DSNU  2.8 10.0 mV
DC power dissipation PD  394 578 mW (Note 9)
Total transfer efficiency TTE 92 99  % 
Output impedance ZO  66 250  
DC output signal voltage VOS 3.9 4.9 5.9 V
(Note 10)
Reset noise VRSN  0.4  V
Random noise ND  1.2  mV (Note 11)

© 2017 6 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG

Note 2: Sensitivity is defined for each color of signal outputs average when the photosensitive surface is applied
with the light of uniform illumination and uniform color temperature.

Note 3-1: PRNU (1) is defined for each color on a single chip by the expressions below when the photosensitive
surface is applied with the light of uniform illumination and uniform color temperature, where measured
approximately 1000 mV of signal output.
X
PRNU (1)   100 (%)
X
X : Average of total signal outputs
X: The maximum deviation from X

Note 3-2: PRNU (1) is defined for each color on a single chip by the expressions below when the photosensitive
surface is applied with the light of uniform illumination and uniform color temperature, where measured
approximately 800 mV of signal output.
X
PRNU (1)   100 (%)
X
X : Average of total signal outputs
X: The maximum deviation from X

Note 3-3: PRNU (1) is defined for each color on a single chip by the expressions below when the photosensitive
surface is applied with the light of uniform illumination and uniform color temperature, where measured
approximately 500 mV of signal output.
X
PRNU (1)   100 (%)
X
X : Average of total signal outputs
X: The maximum deviation from X

Note 3-4: PRNU (1) is defined for each color on a single chip by the expressions below when the photosensitive
surface is applied with the light of uniform illumination and uniform color temperature, where measured
approximately 400 mV of signal output.
X
PRNU (1)   100 (%)
X
X : Average of total signal outputs
X: The maximum deviation from X

Note 4: PRNU (3) is defined as the maximum voltage with next pixel, where measured approximately 50 mV of
signal output.

Note 5: Register imbalance is defined as follows.

10679
Σ|Xn  X(n  1)|
n1
RI   100 (%)
10679 X

Note 6: VSAT is defined as the minimum saturation output voltage of all effective pixels. Condition is over exposure
situation and VOD  9.5 V.

Note 7: Definition of SE:

VSAT VSAT
SE(B/W)  SE(Color) 
RB/W RG

Note 8: VDRK is defined as average dark signal voltage of all effective pixels.
DSNU is defined by the difference between average value (VDRK) and the maximum value of the dark
voltage.

OS
VDRK

DSNU

© 2017 7 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG

Note 9: PD is defined as follows. IOD is DC current dissipation.

PD VOD × IOD

Measurement condition is VOD 10.5 V and input pulse voltage  5.5 V.

Note 10: DC output signal voltage is defined as follows.

Reset noise voltage is defined as follows.

VRSN
OS

VOS

SS

Note 11: Random noise is defined as the standard deviation (sigma) of the output level difference between two
adjacent effective pixels under no illumination (i.e. dark condition) calculated by the following procedure.
CP pulse width: 50 ns

Video output Video output

Output waveform
(effective pixels under 200 ns
dark condition) 200 ns V

Pixel n
Pixel n1

1) Two adjacent pixels (pixel n and n1) in one reading are fixed as measurement points.
2) Each of the output levels at video output periods averaged over 200 ns period to get V(n) and V(n1).
3) V(n1) is subtracted from V(n) to get V.
V  V(n)  V(n1)
4) The standard deviation of V is calculated after procedure 2) and 3) are repeated 30 times (30
readings).

ΔV 
1 30
 ΔVi
30 i1

1 30

 | Vi| V
30 i 1
2

5) Procedure 2), 3) and 4) are repeated 10 times to get sigma value.

6) 10 sigma values are averaged.
1 10
  j
10 j1

7)  value calculated using the above procedure is observed 2 times larger than that measured
relative to the ground level. So we specify the random noise as follows.
1
ND  
2

© 2017 8 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Recommended Operating Conditions (Ta  25°C)
For best performance, the device should be used within the Recommended Operating Conditions.

Characteristics Symbol Min Typ. Max Unit

“H” level V1A, V2A 3.1 3.3 5.5

Clock pulse voltage V
“L” level V1D, V2D 0 0 0.1

Last stage clock pulse “H” level 3.1 3.3 5.5

V1B, VC, V1D* V
voltage “L” level 0 0 0.1
“H” level 2.7 3.3 5.5
Shift pulse voltage VSH V
“L” level 0 0 0.8
“H” level 3.1 3.3 5.5
Reset pulse voltage VRS V
“L” level 0 0 0.5
“H” level 3.1 3.3 5.5
Clamp pulse voltage VCP V
“L” level 0 0 0.5
“H” level 2.7 3.3 5.5
Switch pulse voltage VSW V
“L” level 0 0 0.8
Power supply voltage VOD 9.5 10.0 10.5 V

Clock Characteristics (Ta  25°C)

For best performance, the device should be used within the Recommended Operating Conditions.

Characteristics Symbol Min Typ. Max Unit

Clock pulse frequency f 2.5 2.5 35.0 MHz

Reset pulse frequency fRS 5.0 5.0 35.0 MHz
Clamp pulse frequency fCP 5.0 5.0 35.0 MHz
Clock (1A) capacitance for Color (Note 12) C1A  163  pF
Clock (2A) capacitance for Color (Note 12) C2A  165  pF
C1B, CC,
Last stage clock capacitance (Note 12)  6  pF
C1D*
Clock (1D) capacitance for B/W (Note 12) C1D  72  pF
Clock (2D) capacitance for B/W (Note 12) C2D  73  pF
Shift gate (SH1) capacitance for Color CSH1  14  pF
Shift gate (SH2) capacitance for B/W CSH2  14  pF
Shift gate (SH3) capacitance for B/W CSH3  5.3  pF
Reset gate capacitance CRS  7  pF
Clamp gate capacitance CCP  6  pF
Switch gate capacitance CSW  13  pF

Note 12: VOD  10 V, Input capacitance per a pin.

© 2017 9 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Clocking Mode
1A, 1D,
Mode SW1 SW2 SH1 SH2 SH3 1B C 1D* RS CP
2A 2D

High 1200 dpi 1A Pulse

“L” “H” Pulse “H” Pulse “L” Pulse Pulse
gain 600 dpi 1A
Color
Low 1200 dpi 1A Pulse
“L” “L” Pulse “H” Pulse “L” Pulse Pulse
Bi clamp gain 600 dpi 1A
/ Line clamp High 1200 dpi Pulse Pulse Pulse
“H” “H” “H” “L” Pulse Pulse
gain 600 dpi Pulse Pulse
B/W
Low 1200 dpi Pulse Pulse Pulse
“H” “L” “H” “L” Pulse Pulse
gain 600 dpi Pulse Pulse

© 2017 10 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Timing Chart 1: Color 1200 dpi Mode (Bit Clamp Mode)

SW1 (“L”)

tINT (integration time)

SH1

SH2, 3 (“H”)

1A, 1B

2A

C

1D, 2D, 1D* (“L”)

RS

CP

S10676
S10677
S10678
S10679
S10680
D70

D72
D24
D25

D74
D21
D22
D23

D26

D73

D75

D76
D77
D78
D79
D80
D81

D86

D88
D89
D90
D91
D92

D94
D93
D69

D71

D85

D95
D27
D0
D1
D2
D3

S1
S2
S3
S4
OS1, 2, 3

Dummy outputs Light shielded outputs Dummy outputs Dummy outputs

(24 elements) (48 elements) (8 elements) (6 elements)
(4 elements) (4 elements)
Test outputs
Effective outputs (2 elements)
Dummy outputs (76 elements) (10680 elements) Dummy outputs (20 elements)

1 line readout period (10776 elements)

© 2017 11 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Timing Chart 2: Color 1200 dpi Mode (Line Clamp Mode)
SW1 (“L”)

tINT (integration time)

SH1

SH2, 3 (“H”)

1A, 1B

2A

C

1D, 2D, 1D* (“L”)

RS

CP

S10676
S10677
S10678
S10679
S10680
D70

D72
D24
D25

D74
D21
D22
D23

D26

D73

D75

D76
D77
D78
D79
D80
D81

D86

D88
D89
D90
D91
D92

D94
D93
D69

D71

D85

D87

D95
D27
D0
D1
D2
D3

S1
S2
S3
S4
OS1, 2, 3

Dummy outputs Light shielded outputs Dummy outputs Dummy outputs

(24 elements) (48 elements) (8 elements) (6 elements)
(4 elements) (4 elements)
Test outputs
Effective outputs (2 elements)
Dummy outputs (76 elements) (10680 elements) Dummy outputs (20 elements)

1 line readout period (10776 elements)

© 2017 12 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Timing Chart 3: Color 600 dpi Mode (Bit Clamp Mode)

SW1 (“L”)

tINT (integration time)

SH1

SH2, 3 (“H”)

1A,
1B, C

2A

1D, 2D, 1D* (“L”)

RS

CP
S10675+S10676
S10677+S10678
S10679+S10680
D20+D21
D22+D23
D24+D25
D26+D27

D70+D71
D72+D73
D74+D75

D76+D77
D76+D77
D78+D79
D80+D81

D86+D87
D88+D89
D90+D91
D92+D93
D94+D95
D0+D1
D2+D3

S1+S2
S3+S4

OS1, 2, 3

Dummy Light shielded Dummy Dummy

outputs outputs outputs outputs
(12 elements) (24 elements) (4 elements) (3 elements)
(2 elements) (2 elements)
Test output
Effective outputs (1 element)
Dummy outputs (38 elements) (5340 elements) Dummy outputs (10 elements)

1 line readout period (5388 elements)

© 2017 13 Rev.1.5 2019-01-08

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 TCD2919BFG
Timing Chart 4: Color 600 dpi Mode (Line Clamp Mode)

SW1 (“L”)

tINT (integration time)

SH1

SH2, 3 (“H”)

1A,
1B, C

2A

1D, 2D, 1D* (“L”)

RS

CP
S10675+S10676
S10677+S10678
S10679+S10680

D90+D91
D92+D93
D20+D21
D22+D23
D24+D25
D26+D27

D70+D71
D72+D73
D74+D75

D76+D77
D78+D79
D80+D81

D86+D87
D88+D89

D94+D95
D0+D1
D2+D3

S1+S2
S3+S4

OS1, 2, 3

Dummy Light shielded Dummy Dummy

outputs outputs outputs outputs
(12 elements) (24 elements) (4 elements) (3 elements)
(2 elements) (2 elements)
Test output
Effective outputs (1 element)
Dummy outputs (38 elements) (5340 elements) Dummy outputs (10 elements)

1 line readout period (5388 elements)

© 2017 14 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Timing Chart 5: B/W 1200 dpi Mode (Bit Clamp Mode)
SW1 (“H”)

SH1 (“H”)

tINT (integration time)

SH2

tINT (integration time)

SH3

1A, 2A,
1B, C (“L”)

1D, 1D*

2D

RS

CP

S10678
S10677

S10677
D20
D24

D68
D72

D80
D84
D88
D92

D21
D25

D69
D73

D81
D85
D89
D93

D20
D24

D68
D72

D80
D84
D88
D92
D77
D76

D76
D0

D1

D0
S1

S2

S1
OS1
S10679

S10680

S10679
D22
D26

D70
D74

D78
D82
D86
D90
D94

D23
D27

D71
D75

D79
D83
D87
D91
D95

D22
D26

D70
D74

D78
D82
D86
D90
D94
D2

D3

D2
S3

S4

S3
OS2

Dummy Dummy Dummy

outputs outputs outputs
Dummy Light shielded (2 elements) Dummy Light shielded (2 elements) Dummy Light shielded (2 elements)
outputs outputs outputs outputs outputs outputs
(6 elements) (12 elements) (1 element) (1 element) (1 element)
(6 elements) (12 elements) (6 elements) (12 elements)

(1 element) (1 element) Test output (1 element) (1 element) Test output (1 element) (1 element) Test output
(1 element) (1 element) (1 element)
Effective outputs Effective outputs Effective outputs
Dummy outputs Dummy outputs Dummy outputs Dummy outputs Dummy outputs Dummy outputs
(2670 elements) (2670 elements) (2670 elements)
(19 elements) (5 elements) (19 elements) (5 elements) (19 elements) (5 elements)

1 line readout period (2694 elements) 1 line readout period (2694 elements) 1 line readout period (2694 elements)

© 2017 15 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Timing Chart 6: B/W 1200 dpi Mode (Line Clamp Mode)
SW1 (“H”)

SH1 (“H”)

tINT (integration time)

SH2

tINT (integration time)

SH3

1A, 2A,
1B, C (“L”)

1D, 1D*

2D

RS

CP

S10678
S10677

S10677
D20
D24

D68
D72

D80
D84
D88
D92

D21
D25

D69
D73

D77
D81
D85
D89
D93

D20
D24

D68
D72

D80
D84
D88
D92
D76

D76
D0

D1

D0
S1

S2

S1
OS1
S10679

S10680

S10679
D22
D26

D70
D74

D78
D82
D86
D90
D94

D23
D27

D71
D75

D79
D83
D87
D91
D95

D22
D26

D70
D74

D78
D82
D86
D90
D94
D2

D3

D2
S3

S4

S3
OS2

Dummy Dummy Dummy

outputs outputs outputs
Dummy Light shielded (2 elements) Dummy Light shielded (2 elements) Dummy Light shielded (2 elements)
outputs outputs outputs outputs outputs outputs
(1 element) (1 element) (1 element)
(6 elements) (12 elements) (6 elements) (12 elements) (6 elements) (12 elements)

(1 element) (1 element) Test output (1 element) (1 element) Test output (1 element) (1 element) Test output
(1 element) (1 element) (1 element)
Effective outputs Effective outputs Effective outputs
Dummy outputs Dummy outputs Dummy outputs Dummy outputs Dummy outputs Dummy outputs
(2670 elements) (2670 elements) (2670 elements)
(19 elements) (5 elements) (19 elements) (5 elements) (19 elements) (5 elements)

1 line readout period (2694 elements) 1 line readout period (2694 elements) 1 line readout period (2694 elements)

© 2017 16 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Timing Chart 7: B/W 600 dpi Mode (Bit Clamp Mode)
SW1 (“H”)

SH1 (“H”)

tINT (integration time)

SH2, 3

1A, 2A,
1B, C (“L”)

1D, 1D*

2D

RS

CP
S10677+S10678
D56+D57

D60+D61

D72+D73
D64+D65
D12+D13

S1+S2

D68
D10

D70

D76
D0

OS1
S10679+S10680
D58+D59

D62+D63

D74+D75
D66+D67
D14+D15

S3+S4

OS2
D11

D69
D71

D77
D1

Dummy
outputs
Dummy Light shielded (2 elements)
outputs outputs
(1 element)
(6 elements) (12 elements)

(1 element) (1 element) Test output

(1 element)
Effective outputs
Dummy outputs Dummy outputs
(2670 elements)
(19 elements) (5 elements)

1 line readout period (2694 elements)

© 2017 17 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Timing Chart 8: B/W 600 dpi Mode (Line Clamp Mode)
SW1 (“H”)

SH1 (“H”)

tINT (integration time)

SH2, 3

1A, 2A,
1B, C (“L”)

1D, 1D*

2D

RS

CP
S10677+S10678
D56+D57

D60+D61

D72+D73
D64+D65
D12+D13

S1+S2

D68
D10

D70

D76
D0

OS1
S10679+S10680
D58+D59

D62+D63

D74+D75
D66+D67
D14+D15

S3+S4

OS2
D11

D69
D71

D77
D1

Dummy
outputs
Dummy Light shielded (2 elements)
outputs outputs
(1 elements)
(6 elements) (12 elements)

(1 element) (1 element) Test output

(1 element)
Effective outputs
Dummy outputs Dummy outputs
(2670 elements)
(19 elements) (5 elements)

1 line readout period (2694 elements)

© 2017 18 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Timing Requirements
t2 t3 t4
3.3 V or 5 V
90 % 90 %
SH
10 % 10 %
3.3 V or 5 V
90 % t1 t5 90 %
1
3.3 V or 5 V
t6
RS
10 %
3.3 V or 5 V
(Note 13)
CP

t21 3.3 V or 5 V
SW (“L”  “H”)
3.3 V or 5 V
SW (“H”  “L”)

Note 13: Keep the RS and CP pins “L” level.

Cross point timing (Clock pulse voltage 3.3 V)

t7 t7 t7 t7
1A 3.1 V 1D 3.1 V

3.0 V (min) 3.0 V (min) 3.0 V (min) 3.0 V (min)

2A 2D
0.1 V 0.1 V
SS SS
2.0 V (max) 2.0 V (max)
1.0 V (min) 1.0 V (min)

t7(Note 16) t7(Note 16)

2A 3.1 V 2D 3.1 V

3.0 V (min) 3.0 V (min) 3.0 V (min) 3.0 V (min)

1B, C 1D*
0.1 V 0.1 V
SS SS
3.0 V (max) 0.3 V (min) 3.0 V (max) 0.3 V (min)

Note 16: Pulse width is the period when voltage difference between 2A and 1B/C, 2D and 1D* is over 3.0 V.
Observe the specification strictly because of normal transfer efficiency.

Cross point timing (Clock pulse voltage 5.0 V)

t7 t7 t7 t7
1A 3.1 V 1D 3.1 V

3.0 V (min) 3.0 V (min) 3.0 V (min) 3.0 V (min)

2A 2D
0.1 V 0.1 V
SS SS
3.5 V (max) 3.5 V (max)
1.5 V (min) 1.5 V (min)

t7(Note 16) t7(Note 16)

2A 3.1 V 2D 3.1 V

3.0 V (min) 3.0 V (min) 3.0 V (min) 3.0 V (min)

1B, C 1D*
0.1 V 0.1 V
SS SS
4.5 V (max) 0.5 V (min) 4.5 V (max) 0.5 V (min)

Note 16: Pulse width is the period when voltage difference between 2A and 1B/C, 2D and 1D* is over 3.0 V.
Observe the specification strictly because of normal transfer efficiency.

© 2017 19 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG

Color 1200 dpi mode 5.0 V or

90 % 90 % 3.3 V
1A
10 % 10 %
t8 t9
5.0 V or
90 % 90 % 3.3 V
2A
10 % 10 %

t8’ t9’ 5.0 V or

90 % 90 % 3.3 V
1B
10 % 10 %
t8’ t9’ 5.0 V or
90 % 90 % 3.3 V
C 10 %
10 %
t10 t11
5.0 V or
90 % 90 % 3.3 V
RS
10 % t12 10 % 10 % 10 %
t14
t13 t15 t20 t15 t20
t16 t17 5.0 V or
90 % 90 % 3.3 V
CP
10 % t18 10 % 10 %

t19 t19

OS
(Bit clamp mode)
Video signal Video signal
10 % 10 % 10 % 10 %

OS
(Line clamp mode)
Video signal Video signal

Color 600 dpi mode

5.0 V or
90 % 90 % 3.3 V
1A 10 %
10 %
t8 t9 5.0 V or
90 % 90 % 3.3 V
2A
10 % 10 %
t8’ t9’ 5.0 V or
90 % 90 % 3.3 V
1B, C
10 % 10 %
t10 t11
5.0 V or
90 % 90 %
3.3 V
RS
10 % t12 10 % 10 %
t14 t20
t15
t13
t16 t17 5.0 V or
90 % 90 % 3.3 V
CP 10 % t18 10 %
t19
OS
(Bit clamp mode)
Video signal
10 % 10 %
OS
(Line clamp mode)
Video signal

© 2017 20 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG

B/W 1200 dpi mode & B/W 600 dpi mode (SH2  SH3)

5.0 V or
90 % 90 % 3.3 V
1D
10 % 10 %
t8 t9 5.0 V or
90 % 90 % 3.3 V
2D
10 % 10 % 5.0 V or
t8’ t9’ 3.3 V
5.0 V or
90 % 90 %
1D* 3.3 V
10 % 10 %
t10 t11
90 % 90 %
RS
10 % t12 10 % 10 %
t14 t15
t13 t20
t16 t17 5.0 V or
90 % 90 % 3.3 V
CP 10 % t18 10 %
t19
OS
(Bit clamp mode)
Video signal
10 % 10 %

OS
(Line clamp mode)
Video signal

© 2017 21 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG

Typ.
Characteristics Symbol Min Max Unit
(Note 14)
t1 120 200 2500 ns
Pulse timing of SH and 1
t5 1000 1075 2500 ns
SH pulse rise time, fall time t2, t4 0 10  ns
SH pulse width t3 3000 3500  ns
Pulse timing of SH and RS t6 975   ns
1A, 2A pulse width (Note 15)
1D, 2D pulse width (Note 15)
t7 6 90  ns
2A, 1B/ C pulse width (Note 16)
2D, 1D* pulse width (Note 16)
1A, 2A pulse rise time, fall time
t8, t9 0 15  ns
1D, 2D pulse rise time, fall time
1B, C, 1D* pulse rise time, fall time t8’, t9’ 0 3 8 ns
RS pulse rise time, fall time t10, t11 0 10  ns
RS pulse width t12 6 15  ns
t13 0 0  ns
Pulse timing of RS and CP
t14 6 50  ns

Pulse timing of 1B and CP

Pulse timing of C and CP t15 -2 40  ns
Pulse timing of 1D* and CP
CP pulse rise time, fall time t16, t17 0 10  ns
CP pulse width t18 6 40  ns
1B and OS  8.5  ns
C and OS t19  8.5  ns
Video data delay time
1D* and OS  8.5  ns
RS and OS t20  3.1  ns
Pulse timing of SH and SW t21 100 500 t3-100 ns

Note 14: Measured with fRS  5 MHz.

Note 15: Pulse width is the period when voltage difference between 1A and 2A, 1D and 2D is over 3.0 V.
Observe the specification strictly because of normal transfer efficiency.

Note 16: Pulse width is the period when voltage difference between 2A and 1B/ C, 2D and 1D* is over 3.0 V.
Observe the specification strictly because of normal transfer efficiency.

© 2017 22 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Typical Spectral Response

Spectral Response
1.0
Ta  25°C
Red

Green
0.8
Blue
Relative response

0.6

0.4

0.2

0
400 450 500 550 600 650 700
Wavelength [nm]

Spectral Response
Relative response

Wavelength [nm]

© 2017 23 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Typical Drive Circuit (at f  15 MHz or lower)

SW1
10 V SH3
SH2
0.1 F/25 V
3.3 V
47 F/25 V 0.1 F/25 V

1D*

2D

1D

22 21 20 19 18 17 16 15 14 13 12 CP
SW1 1D* OD OS3 OS2 OS1 SS 2D 1D SH3 SH2
RS

TCD2919BFG

SS C 1B RS CP SS NC SW2 2A 1A SH1

1 2 3 4 5 6 7 8 9 10 11
IC1

SH1
SW2

3.3 V
10 V
0.1 F/25 V 0.1 F/25 V

1A
47 F/25 V

OS1 2A
OS2

OS3
1B

C

IC2
IC1, 2: 74AC04

© 2017 24 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Typical Drive Circuit

SW1
10 V SH3
SH2
0.1 F/25 V
3.3 V
47 F/25 V 0.1 F/25 V

1D*

2D

22 21 20 19 18 17 16 15 14 13 12 1D
SW1 1D* OD OS3 OS2 OS1 SS 2D 1D SH3 SH2

TCD2919BFG

SS C 1B RS CP SS NC SW2 2A 1A SH1

1 2 3 4 5 6 7 8 9 10 11
IC1

SH1
SW2

3.3 V
0.1 F/25 V
10 V
0.1 F/25 V
CP

RS
47 F/25 V
1B

OS1 C
OS2

OS3

IC2

3.3 V
IC1, 2, 3: 74AC04
0.1 F/25 V

1A

2A

IC3

© 2017 25 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Cautions
1. Electrostatic Breakdown
Store in shorting clip or in conductive foam to avoid electrostatic breakdown.
CCD Image Sensor is protected against static electricity, but inferior puncture mode device due to static
electricity is sometimes detected. In handing the device, it is necessary to execute the following static electricity
preventive measures, in order to prevent the trouble rate increase of the manufacturing system due to static
electricity.

a. Prevent the generation of static electricity due to friction by making the work with bare hands or by putting
on cotton gloves and non-charging working clothes.
b. Discharge the static electricity by providing earth plate or earth wire on the floor, door or stand of the work
room.
c. Ground the tools such as soldering iron, radio cutting pliers of or pincer.
d. Ionized air is recommended for discharge when handling CCD image sensors.

It is not necessarily required to execute all precaution items for static electricity.
It is all right to mitigate the precautions by confirming that the trouble rate within the prescribed range.

2. Incident Light
CCD sensor is sensitive to infrared light. Note that infrared light component degrades resolution and PRNU of
CCD sensor.

3. Cloudiness of Glass Inside

CCD surface mount products may have a haze on the inside of glass, so be careful about following.
Even if the haze arises inside of glass, when it is not on the pixel area, there is no problem in quality.
Before the aluminum bag is opened, please keep the products in the environment below 30°C90 %RH. And
after the aluminum bag is opened, please keep the products in the environment below 30°C60 %RH.
Please mount the products within 12 months from sealed date and within 6 months from opening the aluminum
bag. (Sealed date is printed on aluminum bag.)

4. Ultrasonic Cleaning
Ultrasonic cleaning should not be used with such hermetically-sealed ceramic package as CCD because the
bonding wires can become disconnected due to resonance during the cleaning process.

5. Mounting
In the case of solder mounting, the devices should be mounted with the window glass protective tape in order to
avoid dust or dirt included in reflow machine.

6. Window Glass Protective Tape

The window glass protective tape is manufactured from materials in which static charges tend to build up. When
removing the tape from CCD sensor after solder mounting, install an ionizer to prevent the tape from being
charged with static electricity.
When the tape is removed, adhesives will remain in the glass surface. Since these adhesives appear as black or
white flaws on the image, please wipe the window glass surface with the cloth into which the organic solvent
was infiltrated. Then please attach CCD to a product.
Do not reuse the tape.

© 2017 26 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
7. Soldering Temperature Profile
Good temperature profile for each soldering method is as follows. In addition, in case of the repair work
accompanied by IC removal, since the degree of parallel may be spoiled with the left solder, please do not carry
out and in case of the repair work not accompanied by IC removal, carry out with a soldering iron or , in reflow,
only one time.
a. Using a soldering iron
Complete soldering within three seconds for lead temperatures of up to 350°C.
b. Using long infrared rays reflow / hot air reflow
Please do reflow at the condition that the package surface (electrode) temperature is on the solder maker's
recommendation profile. And that reflow profile is within below condition 1 to 3.

1. Peak temperature: 250°C or less.

2. Time to keep high temperature: 220 to 250°C, 30 to 40 s.
3. Pre. heat: 150 to 190°C, 60 to 120 s

8. Window Glass
The dust and stain on the glass window of the package degrade optical performance of CCD sensor.
Keep the glass window clean by saturating a cotton swab in alcohol and lightly wiping the surface, and allow the
glass to dry, by blowing with filtered dry N2. Care should be taken to avoid mechanical or thermal shock because
the glass window is easily to damage.

9. Cleaning Method of the Window Glass Surface

Wiping Cloth
a. Use soft cloth with a fine mesh.
b. The wiping cloth must not cause dust from itself.
c. Use a clean wiping cloth necessarily.

Cleaner
When using solvents, such as alcohol, unavoidably, it is cautious of the next.
a. A clean thing with quick-drying.
b. After liquid dries, there needs to be no residual substance.
c. A thing safe for a human body.
And, please observe the use term of a solvent and use the storage container of a solvent to be clean.
Be cautious of fire enough.

Way of Cleaning
First, the surface of window glass is wiped with the wiping cloth into which the cleaner was infiltrated. Please
wipe down the surface of window glass at least 2 times or more.
Next, the surface of window glass wipes with the dry wiping cloth. Please wipe down the surface of window
glass at least 3 times or more.
Finally, blow cleaning is performed by dry N2 filtered.
If operator wipes the surface of the window glass with the above-mentioned process and dirt still remains,
TOSHIBA recommends repeating the clean operation from the beginning.
Be cautious of the next thing.
a. Don't infiltrate the cleaner too much.
b. A wiping portion is performed into the optical range and don't touch the edge of window glass.
c. Be sure to wipe in a long direction and the same direction.
d. A wiping cloth always uses an unused portion.

Wiper

© 2017 27 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
10. Foot Pattern on the PCB
We recommend fig.1 's foot pattern for your PCB(Printed Circuit Board). Unit: mm

41.4

37.6

P1.27 × 10 =12.7
1.27
0.67

3.1

6.5
0.67

fig. 1

11. Mask for Solder Paste Application

We recommend metal mask that have the following thickness.
Thickness : 0.2 mm.
And we recommend that the opened area size on the metal mask is 95 % to 100 % for pads on solder.

12. Temperature Cycle

After mounting, if temperature cycle stress is too much, CCD surface mount products have a possibility that a
crack may arise in solder. As a method of preventing a solder crack, underfill is effective.

13. Reuse of a Tray

We reuse tray in order to reduce plastic waste as we can. Please cooperate with us in reusing for ecology.

© 2017 28 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
14. Caution for Package Handling
Over force on CCD products may cause crack and chip removing on the product. The three point bending
strength of this product is the following. (Reference data)
If the stress is loaded far from a fulcrum, the stress on the package will be increase.
When you will treat CCD on every process, please be careful particularly. For example, soldering on PCB,
cutting PCB, wiping on the glass surface, optical assemble and so on.

Bending Test
force(N) force(N)

13 mm 36 mm

force(N) force(N)

13 mm 36 mm

22CLCC
Bearing length 13 mm: The force from upside: 300 [N]
The force from downside: 200 [N]
Bearing length 36 mm: The force from upside : 150 [N]
The force from downside : 80 [N]

© 2017 29 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Application Note (Reference Only): Timing Chart (Color 300 dpi Mode: Bit Clamp Mode)

SW1 (“L”)

tINT (integration time)

SH1

SH2, 3 (“H”)

1A
1B, C

2A

1D, 2D, 1D* (“L”)

RS

CP

+S10679+S10680
S10677+S10678
+D22+D23

+D26+D27

+D70+D71

+D74+D75

+D78+D79

+D82+D83

+D94+D95
+D90+D91
D20+D21

D24+D25

D68+D69

D72+D73

D76+D77

D80+D81

D92+D93
D88+D89
+D2+D3

+S3+S4
D0+D1

S1+S2

OS1, 2, 3

Light shielded Dummy

Dummy
Dummy outputs outputs output
outputs
(6 elements) (12 elements) (1 element)
(2 elements)
(1 element) (1 element)
Test output
Effective outputs (1 element)
Dummy outputs (19 elements) (2670 elements) Dummy outputs (5 elements)

1 line readout period (2694 elements)

© 2017 30 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Application Note (Reference Only): Timing Chart (Color 300 dpi Mode: Line Clamp Mode)

SW1 (“L”)

tINT (integration time)

SH1

SH2, 3 (“H”)

1A
1B, C

2A

1D, 2D, 1D* (“L”)

RS

CP

+S10679+S10680
S10677+S10678
+D78+D79
+D22+D23

+D26+D27

+D70+D71

+D74+D75

+D82+D83

+D94+D95
+D90+D91
D76+D77
D20+D21

D24+D25

D68+D69

D72+D73

D80+D81

D92+D93
D88+D89
+D2+D3

+S3+S4
D0+D1

S1+S2

OS1, 2, 3

Light shielded Dummy

Dummy
Dummy outputs outputs output
outputs
(6 elements) (12 elements) (1 element)
(2 elements)
(1 element) (1 element)
Test output
Effective outputs (1 element)
Dummy outputs (19 elements) (2670 elements) Dummy outputs (5 elements)

1 line readout period (2694 elements)

© 2017 31 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Timing Example (300 dpi Mode/f  20 MHz/fdata  10 MHz)

Conventional timing
f  20 MHz
1A
25 ns 25 ns
2A
25 ns 25 ns
1B

C
fdata  10 MHz
RS

CP
6 ns (min)

OS
S1S2 S5S6
S3S4 S7S8

Wide sampling period timing

f  20 MHz
1A
25 ns 25 ns
2A
25 ns 25 ns
1B

C
fdata  10 MHz
RS

CP
6 ns (min)

OS S5S6
S1S2
S3S4 S7S8

© 2017 32 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG
Package Dimensions
WQFN22-C-R240-1.27

A: 8.35±0.15

© 2017 33 Rev.1.5 2019-01-08

Toshiba Electronic Devices & Storage Corporation
 TCD2919BFG

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© 2017 34 Rev.1.5 2019-01-08
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