Double Gate MOSFET

DOUBLE GATE MOSFET:-

The main idea of a Double Gate MOSFET is to control the Si channel very
efficiently by choosing the Si channel width to be very small and by applying a
gate contact to both sides of the channel. This double stage will help us to leads
the higher currents as compared with a MOSFET having only one gate

In the mosfet that we are containing the three parts and they can represented

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1. Gate

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2. Drain

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3. Source
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And in this that the doped and the drain source region that contain the silicon atom .
And the insulating material that contain the sio2 and that was been represent as the
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default region.
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 STRUCTURE OF THE DOUBLE GATE MOSFET:-
There are mainly 3 types of the double gate structure .
TYPE-1 PLANAR DOUBLE GATE, TYPE-2:- VEETICAL DOUBLE GATE TYPE-2:-
HORIZONTAL DOUBLE GATE
They are type I planar structure resembles the contain the bulk MOSFET. The silicon
channel thickness uniformity can be well controlled by thin film deposition . And this
first type can be able to access the bottom gate very well . And second one is hard to
access the bottom gate . And the second type is hard to realize as the fabrication of the
vertical source and drain and it was not be able to compatible with current planar
technology. And the third type structure is been used to easy to be self--aligned and
accessed. There are two major variations based on the third structure:

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And the third structure that contain the mainly of the two important this that are of DG

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FinFETs and Tri-Gate MOSFETs . If the height of the silicon film is much larger than the
width and there are effectively two gates conducting current, it forms a DG FinFET

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structure; if the height is comparable with the width and the top gate is also utilized to
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conduct current, type III structure forms a Tri-Gate MOSFET
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EXPLAIN ABOUT THE TYPES OF GATESD IN THE DOUBLE GATE

MOSFET:-
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There are two type double gate mosfet and they are contain of the TWO GATES
DOUBLE GATE MOSFET , and FOUR DOUBLE GATE MOSFET

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 The purpose behind the downscaling of CMOS transistors is to increase the speed and
capacity of integrated circuits.
There are number of multi-gate MOSFETs have been proposed, including Surrounding 2
Gate , Pi-Gate , Omega-Gate , Tri-Gate and Double-Gate (DG) MOSFETs. The better
scalability allows multi-gate MOSFETs to scale down to shorter gate length with same
off-current or produce less off-current with same gate length, there for it would like to
achieving better power-speed product.
MOSFET with two gates of identical work functions and asymmetric DG MOSFET with
two gates of different work functions. To fully exploit the benefits of DG MOSFETs, the
body of DG MOSFETs is usually undoped or lightly doped. There are two operation
modes for DG MOSFETs: three-terminal and four-terminal driven mode. The three-
terminal mode refers to the situation where the two gates of DG MOSFET are

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electrically connected and switched simultaneously. When operated in four-terminal

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driven mode, the two gates are biased differently with only one gate switching . The

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four-terminal driven mode enables the possibility of dynamic threshold voltage

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adjustment in circuit design and thus enlarges circuit design space. One disadvantage
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arising from the fixed second gate voltage is that four-terminal driven DG MOSFETs
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exhibit non-ideal subthreshold slope. This is because the potential across the silicon film
does not move along as a whole with the switching gate if the potential of the non-
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switching gate is fixed. The four-terminal driven DG MOSFET also shows worse short-
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channel effect than the commonly used three-terminal driven DG MOSFET .

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 OPERATION OF THE DOUBLE GATE MOSFET:-
The steps that are been required to operate the double gate mosfet
Apply the gate voltage to the SiO2 insulator [glass] and the gate source drain of the 5
volts holes N . And that lead to the transmitted the electrons from the N to the P side of
the mosfet then the place where the excess amount of the holes are been present in
the mosfet and that lead to the replaced by the electrons . And by that replacement
that the all holes are been replaced by the electrons and that lead the mosfet to enter
into the saturation region with the excess amount of the electron . and that lead the
electrons to flow across the drain.
And when we are been operation the DOUBLE GATE MOSFET that there are lot of

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conditions must been followed by the mosfet. And that conditions are that the voltage

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across the BULK MOSFET limited must be less than 0.6 volts. And the limitation of the

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further scaling of the tox must be less than 2nm. And the length of the channel must be

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50nm . And in this that the carrier mobility decreases as the channel length decreases
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and that lead to increase the vertical electric increases. And the roll of the challen length
would be decreases. And the tunneling to the gate oxide would be able to removed [or]
offed and that lead to the increase in the area and the density of the mosfet.
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And in this we would mainly use the MOORE’S LAW . The main thing about this law is to
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explain when the DG mosfet is moved then that lead to the unique alternative to build
the nano mosfets when the Lg<50nm. When there was the better control the channel
from the gates that would be able to reduce the short of the channel effect and that
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lead to the improving of the threshold slope .

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 ADVANTAGES OF THE DOUBLE GATE AMPLIFIER :-
The novel structure, i.e., two gates and an undoped, thin silicon film, enables DG
MOSFETs to have better performance than conventional MOS transistors. The key
benefits of DG MOSFETs include better short-channel effects, elimination of random
dopant fluctuation effect and better carrier transportation. This subsection explains the
physical reasons for the advantages of DG MOSFETs over bulk MOSFETs.And there are
lot of other advantages are also there in the double gate mosfet . And they are
INCREASSING THE CARRIER MOBILITY OF THE SILICON MOS TRANSISTER:-Carrier
scattering from increasing body doping that lead to the transfer the electric field from
the source to the drain reduce mobility of the double gate mosfet and that the lightly
doped channel in a DGFET results in the negligible of the charge in the depletion region

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REDUCING THE POWER CONSUMPTION :- Double gate of the coupling that allows from

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the higher drive current at the lower supplied voltage and at the threshold voltage . and

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the energy is a quadratic function of the supplied voltage . and the reduction of the

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channel and the gate leakage current in off state of the transistor that leads to the
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produce the huge power saving. And the separate of the each gate that would lead to
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the dynamic control .
THRESHOLD VOLTAGE CONTROL OF THE MOS TRANSISTOR:- Increasing in the doping
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concentration in the body of the double gate mosfet that would lead to the control of
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the voltage in the mosfet . And when there was been increasing in the doping
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concentration that lead asymmetric gate work function. And the short channel effect
would be able to see on the standard silicon mosfet device. DGFET would be able to
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offers the great control of the channel because of the double gate. And the gate leakage
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current is prevented by a thick gate oxide film.

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 REFERENCES:-
1. Sang-Hyun Oh, Student Member, IEEE, Don Monroe, Member, IEEE, and J.
M. Hergenrother, Member, IEEE
2. lectronics & Communication Engineering Department, Kalyani
Goverenment Engineering College, Kalyani, West Bengal 741235, India b
Department of Electronics & Communication Engineering, Meghnad Saha
Institute of Technology, Nazirabad, Kolkata, West Bengal 700107, India c
Electronics & Telecommunication Department, Jadavpur University,
Kolkata, West Bengal 700032, Indi

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3. Savas Kaya, Member, IEEE, and Wei Ma, Student Member, IEEE

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4. Giorgio Baccarani, Fellow, IEEE, and Susanna Reggiani

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5. Juan A. López-Villanueva, Member, IEEE, Pedro Cartujo-Cassinello,

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Francisco Gámiz, Member, IEEE, Jesús Banqueri, Member, IEEE, and Alberto
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J. Palma
6.
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