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    Macmac Salazar
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    The document contains calculations for various circuit parameters of a BJT and JFET circuit: 1) Beta (B) is calculated to be 170.466 from the given collector and base currents. 2) Gate voltage (VG), emitter voltage (VE), source voltage (VS), and drain voltage (VD) are calculated from resistor divider networks and transistor equations. 3) Percent differences are calculated between measured and calculated values for various currents and voltages to evaluate the accuracy of the calculations and circuit model.

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    part 2

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    The document contains calculations for various circuit parameters of a BJT and JFET circuit: 1) Beta (B) is calculated to be 170.466 from the given collector and base currents. 2) Gate voltage (VG), emitter voltage (VE), source voltage (VS), and drain voltage (VD) are calculated from resistor divider networks and transistor equations. 3) Percent differences are calculated between measured and calculated values for various currents and voltages to evaluate the accuracy of the calculations and circuit model.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    6 views2 pages

    Part 2

    Uploaded by

    Macmac Salazar
    The document contains calculations for various circuit parameters of a BJT and JFET circuit: 1) Beta (B) is calculated to be 170.466 from the given collector and base currents. 2) Gate voltage (VG), emitter voltage (VE), source voltage (VS), and drain voltage (VD) are calculated from resistor divider networks and transistor equations. 3) Percent differences are calculated between measured and calculated values for various currents and voltages to evaluate the accuracy of the calculations and circuit model.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 2

    II.

    Calculations

    For Beta:

    IC
    B=
    IB
    3.29 mA
    =
    19.3 uA
    = 170.466

    For BJT-JFET:

    R1 5.38 mA −5.27 mA
    VG= VB= VCC ( ) ID/IE% difference=
    R 1+ R 2 5.38 mA
    4.7 kΩ = 2.04%
    = 30 V ( )
    4.7 kΩ+15 kΩ
    = 7.16 V 5.38 mA −5.24 mA
    IC % difference=
    5.38 mA
    7.16 V −7.04 V = 2.6%
    VG and VB % difference=
    7.16 V
    0.5
    = 1.67% ID
    VGS= (1−( ) )(VGSoff )
    IDSS
    VE= VB-0.7 V 5.27 mA 0.5
    = 7.16 V- 0.7 V = (1−( ) )(−2.97V )
    9.49mA
    = 6.46 V
    = -0.757 V
    6.46 V −6.33 V
    VE % difference= == 2.01% −0.757V + 0.8V
    6.46 V VGS % difference= = 5.68%
    −0.757 V
    VS= VC= VG-VGS
    = 7.16 V+ 0.757 IC
    = 7.92 V IB=
    B
    5.24 mA
    7.92 V −7.84 V =
    VS/VC % difference= 170.466
    7.92 V = 30.74 uA
    = 1.01%
    30.74 uA−33.2 uA
    VD= VDD-IDRD IB %difference=
    30.74 uA
    = 30V- (5.27mA)(2.7kΩ ) = 8.06%
    = 15.77 V

    15.77 V −15.9V
    VD %difference=
    15.77
    = 0.82%

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