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b. Repeat part (a) using the approximate diode model and compare the results.
c. Repeat part (a) using the ideal diode model and compare the results.
a)
E
ID=
R
8V
ID=
0.33 kΩ
ID=24.24 mA
VD=0.92 V
VR=E−VD
VR=8V −0.92 V
VR=7.08 V
b)
VD=0.7 V
VR=E−VD
VR=8−0.7 V
VR=7.3 V
c)
VD=0
VR=E−VD
VR=8−0 V
VR=8V
For (a) and (b), the voltage levels of the diodes are quite close. The levels in
part (c) are reasonably close but as expected due to the applied voltage level E.
2. a. Using the characteristics of Fig. 2.147b, determine ID and VD for the circuit of
Fig. 2.148.
b. Repeat part (a) with R = 0.47 k
d. Is the VD level relatively close to 0.7 V in each case? How do the resulting ID levels
compare? Comment accordingly.
to)
VD=5 V
E
ID=
R
5V
ID=
2.2 kΩ
ID=2.27 mA
According to the graph in figure b) the current is 2mA and the voltage is 0.7V
b)
E
VD=5 V ID=
R
5V
ID=
0.47 kΩ
ID=10.64 mA
According to the graph in figure b) the current is 9mA and the voltage is 0.8V
c)
E
VD=5 V ID=
R
5V
ID=
0.18 kΩ
ID=27.78 mA
According to the graph in figure b) the current is 22.5mA and the voltage is 0.93V
The resulting values of the voltage across the diode are quite close, while the diode
currents range from 2 mA to 22.5 mA.
3. Determine the value of R for the circuit in Figure a that will produce a current
through the diode of 10 mA if E=7 V . Use the characteristics of figure b for the
diode.
Figure a. Circuit
Data:
E=7 V
R=?[Ohms ]
Solution:
m=−1.6
E
para VD=0 ID=11.2 mA=
R
E
ID=11.2mA=
R
7V
R= =0.625[ KΩ]
11.2mA
Solution
Data:
E=30 V
R=2.2[KΩ]
a) I D =I R
L .V . K
−30 V +0.7 V + I R R=0
29.3 V
I R= =13.318 [mA ]
2.2 [KΩ]
V D=0.7 [V ]
V R=I R∗R
V R=29.03 [ V ]
b) I D =I R
L .V . K
−30 V +0 V + I R R=0
30 V
I R= =13.636 [mA ]
2.2 [KΩ]
V D=0 [V ]
V R=I R∗R
V R=30 [ V ]
c) If given in section (b) the consumption of the Diode Voltage is 0 and the current
is equal, therefore they are quite close
5. Determine the current I for each of the configurations in Figure 2.150 using the
equivalent diode model .
to)
b)
19.3V
I= =0.965 A
20 Ω
c)
10V
I= =1 A
10 Ω
to)
V o =−4.3 V
|V o| 4.3 V
I R =I D = = =1.955 mA
R 2.2 K Ω
b)
8 V −0.7 V
I D= =1.24 mA
1.2 K Ω+4.7 K Ω
7. Determine the level ofV o for each of the networks in figure 2.152
to)
1 1
¿ ( 20 V −1 V )= ( 19 V )=9.5V
2 2
b)
Vth=I . R
Vth=( 10 mA ) ( 2.2 k )
Vth=22V
Rth=2.2 k
22 V −0.7 V
Id=
2.2 k +1.2 k
Id=6.26 mA
Vo=Id . R
Vo=(6.26 mA)(1.2 k )
Vo=7.51V
b)
20 V +5 V −0.7 V
Id=
6.8 k
Id=3.58 mA
Vo−0.7 V +5 V =0
Vo=−4.3 V
9. Determine Vo1 and Vo2 for the networks in Figure 2.154.
a)
Vo 1=12 V −0.7 V
Vo 1=11.3 V
Vo 2=0.3V
b)
Vo 1=−10 V +0.3 V + 0.7 V
Vo 1=−9V
Vo 2=−6.6 V
4.1mA
Id=
2
Id=2.05 mA
Vo=20 V −0.7 V
Vo=19.3V
b)
15 V +5 V −0.7 V
Id=
2.2 k
Id=8.77 mA
Vo=15 V −0.7 V
Vo=14.3V
*11. Determine Vo and I for the networks of Fig. 2.156
a) The Germanium diode is "on" and prevents the Silicon diode from turning on:
10V −0.3 V 9.7 V
I= I=
1k Ω 1k Ω
I =9.7 mA
b)
Vo=14.6 V
12. Determine Vo1, Vo2, and I for the network in Figure 2.157.
V O 1=0.7 V ,V O 2 =0.3 V
20 V −0.7 V
I 1 k Ω=
1k Ω
19.3V
I 1 k Ω=
1k Ω
I 1 k Ω=19.3 mA
0.7 V −0.3V
I 0.47 K Ω=
0.47 k Ω
0.5 V
I 0.47 K Ω=
0.47 k Ω
I 0.47 K Ω=0.851 mA
I D =I 1k Ω−I 0.47 K Ω
I D =19.3 mA−0.851mA
2 k Ω ( 9.3 V )
V 0=
3k Ω
V 0=6.2V
6.2V
I 2 k Ω=
2k Ω
I 2 k Ω=3.1 mA
I 2k Ω
I D=
2k Ω
3.1 mA
I D=
2k Ω
I D =1.55 mA
14. Determine Vo for the network of Figure 2.39 with 0 V at both inputs.
There is no voltage necessary for the operation of the diodes, which do not work and
Vo=0
fifteen. Determine Vo for the network of Fig. 2.39 with 10 V at both inputs.
Vo=10−0 ,7
Vo=9 , 3
Vo=0.7 V
V o =10V
V o =−4 ,3 V
The Si diode with -5 V at the cathode is working while the other one is not working.
19. Determine Vo for the negative logic AND gate of Fig. 2.160.
V o =0 V −0 , 7 V
V o =−0 , 7 V
Vo=+10 V
Since all terminals in the system are at 10 V, the required 0.7 V difference cannot be
established across any of the diodes. Therefore, both diodes are "off" and Vo = +10 V
as set by the 10 V supply connected to the 1 kΩ resistor
21. Determine Vo for the configuration of Fig. 2.162
Vo=5V −0.3 V
Vo=4.7 V
The Si diode requires more terminal voltage than the Ge diode to turn on. Therefore,
with 5 V at both input terminals, assume the Si diode is "off" and the Ge diode "on".
22. Assuming an ideal diode, plot vi, vd, and id for the half-wave rectifier of Fig.
2.163. The input is a sine waveform with a frequency of 60 Hz.
Vdc=0.318 Vm
Vdc
Vm=
0.318
2V
Vm= V
0.318
Vm=6.28 V
Vm
ℑ=
R
6.28
ℑ=
2.2 KΩ
ℑ=2.85 mA
25. For the network of figure 2.166; trace vo and determine Vcd
V 0=V 10k
V 10 k =0.7 V
V 0=0.7 V
−10+0.7 +1k I =0
−9.3+1 k I =0
1k I =9.3
9.3
I=
1k
I =9.3 m A
27.- a. Dadaist Pmax =14 mW For each of the diodes in Figure 2.167, determine the
maximum current ratings of each diode (using the approximate equivalent model).
c. Determine the current through each diode inV imax using the results of part (b)
d. If there is only one diode, determine the current through it and compare it to the
maximum ratings.
a)
¿ Pmax =14 mW = ( 0.7 V ) I D
14 mW
I D=
0.7 V
I D =20 mA
b)
4.7 k∗56 k
4.7 k + 56 k
¿ 4.34 k
V R=160 V −0.7 V
V R=159.3
159.3 V
I max=
4.34 k
I max=36.71mA
c)
I max
I diode =
2
I 36.71V
diode=¿ ¿
2
I diode=¿ 18.36mA ¿
29.- A full-wave rectifier in bridge configuration with a 120 V rms sinusoidal input has
a 1 k load resistor.
to. If silicon diodes are used, what is the voltage available at the load?
to)
V i=V i −2V D
V i=169 V −2(0.7 V )
V i=168.3 V
V dc =0.636 (168.3 V )
V dc =107.4 V
b)
PIV =V i+V D
PIV =169 V
c)
Vi
I D (max )=
R
168.3V
I D (max )=
1k
I D (max )=168.3 mA
d)
Pmax =V D I D
Pmax =117.81 mW
29. Determine vo and the nominal value of PIV for each of the diodes in the
configuration of Figure 2.168.
Positive negative
Vi=−2Vo−Vo Vo=−100
PIV ≥Vm=100
30. Plot vo for the network of Fig. 2.169 and determine the available dc voltage.
Positive negative
VCD=0,318 ( 2 ) ¿EITHER)
VCD=31 , 8V
31. Plot vo for the network of Fig. 2.170 and determine the available dc voltage.
Positive
2.2 K (2 ,2 K )
2 , 2 K II 2, 2 K= =1, 1 K
2.2 K + 2, 2 K
Vi=2 ,2 ki+1 , 1 ki
Vi
I=
2 ,2 k +1 , 1 k
I =51 ,5 mA
V 2 ,2=113 , 33 V
vcd
VCD=2 ( 0,318 ) 56 , 67
VCD=36 , 04
32. Determine Vo for each of the networks in Figure 2.171 with the input shown.
Silicon diode.
V O =V i
V O =0 V
Analysis by negative half cycle
V O −0.7 V +20 V =0
V O =0.7 V −20 V
V O =−19.3 V
ideal diode
V O =V i−5 V
V O =5V −5 V
V O =0 V
V O =V i−5 V
V O =−20 V −5 V
V O =−25 V
33. Determine Vo for each of the networks in Figure 2.172 with the input shown.
a) Figure a
1.2 kΩ ( 10 V −0.7 V )
V 0=
1.2 KΩ+2.2 KΩ
V 0=3.8V
V O =10V + 5V −0.7 V
V O =14.3V
Analysis by negative half cycle, diode open.
V O =V i
V O =0 V
34. Determine Vo for each of the networks in Figure 2.173 with the input shown.
a) Figure a
b) Figure b
Negative half cycle analysis, ideal diode open but the output voltage is 5V.
V O =−V i=−5 V
V O =5V
35. DetermineV O for each of the networks in Figure 2.174 with the input shown
a) Figure a
Analyzing the positive half cycle
V O −0.7 V −4 V =0
V O =0.7 V +4 V
V O =4.7 V
Analyzing the negative half cycle
V O =V i
V O =8 V
Resulting Wave:
b) Figure b
V O =V i−4 V
V i=0
V O =−4 V
V O + 4 V +8 V =0
V O =−12V
Resulting Wave:
36. Tracei R andV O for the network of Figure 2.175 with the input shown.
Analyzing the positive half cycle
V O −0.7 V −5.3 V =0
V O =0.7 V +5.3 V
V O =6 V
VR 4V
iR = = =0.4 mA
R 10 K Ω
V R −2 V
iR = = =−0.2 mA
R 10 K Ω
Resulting Wave:
BRAS
37. TraceV O for each of the Networks in the Figure. With the entry shown.
c) Figure a
Analyzing the negative half cycle
V i−V c −0.7 V =0
20−V c =0
−V c =−20+ 0.7
V c =19.3
V O =−0.7 V
Analyzing the positive half cycle
V O −V i−V c =0
V O =20 V + 19.3V
V O =39.3V
Resulting Wave:
d) Figure b
38. TraceV O for each of the networks in the following figure with the input shown.
Would it be a good approximation to consider the diode to be ideal in both
configurations? Because?
a)
Analyzing the negative half cycle
V O =−0.7 V
120 V −0.7 V −V c =0
V C =120 V −0.7 V
V c =119.3V
120 V +V c −V O =0
V O =120V + V c
V O =239.3 V
Resulting wave:
Figure b)
Analyzing the positive semi-cycle
V O −0.7 V −20 V =0
V O =20.7 V
120 V −V O −V c =0
V C =120 V −V O
V c =99.3V
120 V +V c +V O=0
V O =−120 V −V c
V O =−219.3 V
Resulting wave:
It would be a good approximation to carry out the calculations using ideal
diodes since the values would only vary by 0.7V, which is the voltage at which
the silicon diode conducts.
a) Calculate 5t.
c) TraceV O .
a) 5 t=5( R)(C)
5 t=(5)(50 K Ω)(0 , 1uF )
5 t=28 ms .
1 1
b) T = = =1 ms
f 1 KHz
T
5t≫
2
5t is much greater than half the period therefore it will be guaranteed that the
capacitor is charged throughout the period.
V O −0.7 V +2 V =0
V O =0.7 V −2 V
V O =−1.3 V
10 V −V O −V c =0
V C =10 V −V O
V c =11.3V
10 V +V c +V O=0
V O =−V c −10 V
V O =−21.3 V
Resulting wave:
3.5uF
D3 R3
3.8k
1N4001
BAT3
2V
47. Determine the voltage available with the voltage doubler of Figure 2.118 if the
secondary voltage of the transformer is 120 vrms
Vm=120 vrms
Vm=❑√ 2*120
vm=169.28 v
Vc−vm−Vm=0
Vc=2 Vm
vc=339.4 v
48. Determine the required PIV ratings of the diodes in Figure 2.118 as a function of
the peak value of the secondary voltage Vm
The PIV for each diode is 2Vm
PIV =2(1.414)(Vrms)
PIV =2.828Vrms