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DM SUFFIX
8 PLASTIC PACKAGE
1
CASE 846A
(Micro–8)
Cathode 1 8 Reference
N/C 2 7 N/C
N/C 3 6 Anode
N/C 4 5 N/C
(Top View)
D SUFFIX
PLASTIC PACKAGE 8
CASE 751
ORDERING INFORMATION (SOP–8) 1
Operating
Device Temperature Range Package Cathode 1 8 Reference
2 7
TL431CLP, ACLP, BCLP TO–92 Anode Anode
3 6
TL431CP, ACP, BCP Plastic
TA = 0° to +70°C
70°C N/C 4 5 N/C
TL431CDM, ACDM, BCDM Micro–8
(Top View)
TL431CD, ACD, BCD SOP–8
SOP–8 is an internally modified SO–8 package. Pins 2,
TL431ILP, AILP, BILP TO–92 3, 6 and 7 are electrically common to the die attach flag.
This internal lead frame modification decreases power
TL431IP, AIP, BIP Plastic
dissipation capability when appropriately mounted on a
TA = –40°
40° to +85°C
85°C
TL431IDM, AIDM, BIDM Micro–8 printed circuit board. SOP–8 conforms to all external
dimensions of the standard SO–8 package.
TL431ID, AID, BID SOP–8
Reference
(R)
800 800
Anode Reference
(A) (R) 20 pF
–
1.0 k
2.5 Vref
800
Anode (A)
Anode (A)
This device contains 12 active transistors.
MAXIMUM RATINGS (Full operating ambient temperature range applies, unless
otherwise noted.)
Rating Symbol Value Unit
Cathode to Anode Voltage VKA 37 V
Cathode Current Range, Continuous IK –100 to +150 mA
Reference Input Current Range, Continuous Iref –0.05 to +10 mA
Operating Junction Temperature TJ 150 °C
Operating Ambient Temperature Range TA °C
TL431I, TL431AI, TL431BI –40 to +85
TL431C, TL431AC, TL431BC 0 to +70
Storage Temperature Range Tstg –65 to +150 °C
Total Power Dissipation @ TA = 25°C PD W
Derate above 25°C Ambient Temperature
D, LP Suffix Plastic Package 0.70
P Suffix Plastic Package 1.10
DM Suffix Plastic Package 0.52
Total Power Dissipation @ TC = 25°C PD W
Derate above 25°C Case Temperature
D, LP Suffix Plastic Package 1.5
P Suffix Plastic Package 3.0
NOTE: ESD data available upon request.
THERMAL CHARACTERISTICS
D, LP Suffix P Suffix DM Suffix
Characteristic Symbol Package Package Package Unit
Thermal Resistance, Junction–to–Ambient RθJA 178 114 240 °C/W
Thermal Resistance, Junction–to–Case RθJC 83 41 – °C/W
Vref max
∆Vref = Vref max
–Vref min
∆TA = T2 – T1
Vref min
T1 T2
ǒ Ǔ
Ambient Temperature
The average temperature coefficient of the reference input voltage, αVref is defined as:
D Vref
X 10 6
V @ 25_C x 10 6 D
+ +DT
ppm ref V
ref
V
ref _C D TA (V
A ref
@ 25_C)
αVref can be positive or negative depending on whether Vref Min or Vref Max occurs at the lower ambient temperature. (Refer to Figure 6.)
Example : DV
ref
+ 8.0 mV and slope is positive,
V @ 25_C + 2.495 V, DT + 70_C a V + 0.008 x 106
+ 45.8 ppmń_C
ref A ref 70 (2.495)
ǒ Ǔ
When the device is programmed with two external resistors, R1 and R2, (refer to Figure 2) the total dynamic impedance of the circuit is defined as:
|Z Ȁ| [ |ZKA|
KA
1 ) R1
R2
Vref max
∆Vref = Vref max
–Vref min
∆TA = T2 – T1
Vref min
T1 T2
ǒ Ǔ
Ambient Temperature
The average temperature coefficient of the reference input voltage, αVref is defined as:
D Vref
X 10 6
V @ 25_C x 10 6 D
+ +DT
ppm ref V
ref
V
ref _C
A
D T (V
A ref
@ 25_C)
αVref can be positive or negative depending on whether Vref Min or Vref Max occurs at the lower ambient temperature. (Refer to Figure 6.)
Example : DV
ref
+ 8.0 mV and slope is positive,
V @ 25_C + 2.495 V, DT + 70_C a V + 0.008 x 106
+ 45.8 ppmń_C
ref A ref 70 (2.495)
ǒ Ǔ
When the device is programmed with two external resistors, R1 and R2, (refer to Figure 2) the total dynamic impedance of the circuit is defined as:
|Z Ȁ| [ |ZKA|
KA
1 ) R1
R2
Figure 1. Test Circuit for VKA = Vref Figure 2. Test Circuit for VKA > Vref Figure 3. Test Circuit for Ioff
Vref R2 V
KA
+ Vref 1 ) R1
R2
) Iref S R1 ǒ Ǔ
Vref
50 400
0 200
–50 0
–100 –200
–2.0 –1.0 0 1.0 2.0 3.0 –1.0 0 1.0 2.0 3.0
VKA, CATHODE VOLTAGE (V) VKA, CATHODE VOLTAGE (V)
Figure 6. Reference Input Voltage versus Figure 7. Reference Input Current versus
Ambient Temperature Ambient Temperature
2600 3.0
VKA
Iref , REFERENCE INPUT CURRENT ( µA)
Input
Vref , REFERENCE INPUT VOLTAGE (mV)
10
–16 Input VKA VKA = 36 V
IK 1.0 Vref = 0 V
R1 Input VKA
Ioff
–24 R2 Vref 0.1
–32 0.01
0 10 20 30 40 –55 –25 0 25 50 75 100 125
VKA, CATHODE VOLTAGE (V) TA, AMBIENT TEMPERATURE (5C)
Output
IK 0.300 ∆ IK = 1.0 mA to 100 mA
50 f ≤ 1.0 kHz
–
+ Gnd 0.280 Output
10 1.0 k IK
50
–
0.260 + Gnd
1.0 0.240
0.220
0.1 0.200
1.0 k 10 k 100 k 1.0 M 10 M –55 –25 0 25 50 75 100 125
f, FREQUENCY (MHz) TA, AMBIENT TEMPERATURE (_C)
Figure 12. Open–Loop Voltage Gain Figure 13. Spectral Noise Density
versus Frequency
60 80
A VOL, OPEN LOOP VOLTAGE GAIN (dB)
Output
50 IK
9.0 µF 15 k
230
NOISE VOLTAGE (nV/ √Hz)
60
40 8.25 k
Gnd
30
40 VKA = Vref
IK = 10 mA
20
TA = 25°C
IK = 10 mA Input Output
10 20
TA = 25_C IK
0
–10 0
1.0 k 10 k 100 k 1.0 M 10 M 10 100 1.0 k 10 k 100 k
f, FREQUENCY (MHz) f, FREQUENCY (Hz)
Figure 16. Test Circuit For Curve A Figure 17. Test Circuit For Curves B, C, And D
of Stability Boundary Conditions of Stability Boundary Conditions
150 150
IK IK
10 k
V+ CL V+ CL
TYPICAL APPLICATIONS
Figure 18. Shunt Regulator Figure 19. High Current Shunt Regulator
V+ Vout V+ Vout
R1 R1
R2
ǒ Ǔ
R2
V out + 1 ) R1
R2
V
ref
V out ǒ Ǔ
+ 1 ) R1
R2
V
ref
Figure 20. Output Control for a Figure 21. Series Pass Regulator
Three–Terminal Fixed Regulator
V+ Vout
MC7805 R1
V+ In Out Vout
Common
R1
R2
ǒ Ǔ
R2
V out + 1 ) R1R2
ǒ Ǔ
V
ref
V out + 1 ) R1R2
V out min + V ) V
V
ref
Figure 22. Constant Current Source Figure 23. Constant Current Sink
RCL V+ Isink
V+ Iout
I
Sink
+ VRref
S
I out + RVref
CL
RS
V+ Vout V+ Vout
R1 R1
R2
ǒ Ǔ
R2
V
out(trip)
+ 1) R1 V
R2 ref
V
out(trip)
ǒ Ǔ
+ 1 ) R1
R2
V
ref
Vout
Vin
R2 R4
Vin Vout
L.E.D. indicator is ‘on’ when V+ is between the Vth = Vref
ǒ Ǔ
< Vref V+
upper and lower limits.
> Vref ≈ 2.0 V
+ 1 ) R1
ǒ Ǔ
Lower Limit V
R2 ref
Upper Limit + 1 ) R3 V
R4 ref
Figure 28. Linear Ohmmeter Figure 29. Simple 400 mW Phono Amplifier
25 V 38 V
1N5305
2.0 mA Tl = 330 to 8.0 Ω 330
150 mH @ 2.0 A
Vin = 10 V to 20 V
TIP115 Vout = 5.0 V
Iout = 1.0 A
1.0 k
4.7 k 4.7 k 1N5823
0.1 µF
2.2 k 10 51 k
+ GMRGMGoRL
these typical curves only provide stability information at
specific cathode voltages and at a specific load condition. G
Additional information is needed to determine the
capacitance needed to optimize phase margin or allow for Example 1:
process variation.
A simplified model of the TL431 is shown in Figure 31.
I
C
+ 10 mA, RL+ 230 W, CL+ 0. Define the transfer gain.
When tested for stability boundaries, the load resistance is The DC gain is:
150 W. The model reference input consists of an input
transistor and a dc emitter resistance connected to the
G + GMRGMGoRL +
device anode. A dependent current source, Gm, develops a (2.138)(1.0 M)(1.25 m)(230) + 615 + 56 dB
ǒ)Ǔ
drives the output dependent current source, Go, which is Figure 32. The asymptotic plot may be expressed as the
connected across the device cathode and anode. following equation:
1 jf
ǒ ) Ǔǒ ) Ǔ
Model component values are:
Vref = 1.78 V
Gm = 0.3 + 2.7 exp (–IC/26 mA)
Av +615
1
500 kHz
jf 1 jf
where IC is the device cathode current and Gm is in mhos 8.0 kHz 60 kHz
Go = 1.25 (Vcp2) µmhos. The Bode plot shows a unity gain crossover frequency of
Resistor and capacitor typical values are shown on the approximately 600 kHz. The phase margin, calculated from
model. Process tolerances are ± 20% for resistors, ±10% for the equation, would be 55.9 degrees. This model matches
capacitors, and ±40% for transconductances. the Open–Loop Bode Plot of Figure 12. The total loop would
An examination of the device model reveals the location of have a unity gain frequency of about 300 kHz with a phase
circuit poles and zeroes: margin of about 44 degrees.
P1 + 2p R
1
C
+ 2p * 1.0
1
M * 20 pF
+7.96 kHz
GM P1
RL
CL
Input
3
15 k
Cathode
9.0 mF
RP2 Go
Ref 10 M 1.0 mmho
Vref
1 1.78 V GM CP1
+ Rref RGM 20 pF CP2
500 k – 1.0 M RZ1 0.265 pF
16
8.25 k 15.9 k
Anode 2
Figure 32. Example 1 Note that the transfer function now has an extra pole
Circuit Open Loop Gain Plot formed by the load capacitance and load resistance.
Note that the crossover frequency in this case is about
TL431 OPEN–LOOP VOLTAGE GAIN VERSUS FREQUENCY 250 kHz, having a phase margin of about –46 degrees.
60 Therefore, instability of this circuit is likely.
Av, OPEN–LOOP VOLTAGE GAIN (dB)
50
Figure 33. Example 2
40 Circuit Open Loop Gain Plot
30
TL431 OPEN–LOOP BODE PLOT WITH LOAD CAP
20 80
10
Av, OPEN–LOOP GAIN (dB)
60
0
–10
40
–20
101 102 103 104 105 106 107
20
f, FREQUENCY (Hz)
Example 2. 0
IC = 7.5 mA, RL = 2.2 kW, CL = 0.01 mF. Cathode tied to
reference input pin. An examination of the data sheet stability –20
boundary curve (Figure 15) shows that this value of load 101 102 103 104 105 106
capacitance and cathode current is on the boundary. Define
f, FREQUENCY (Hz)
the transfer gain.
The DC gain is: With three poles, this system is unstable. The only hope
+ GMRGMGoRL +
G
for stabilizing this circuit is to add a zero. However, that can
only be done by adding a series resistance to the output
(2.323)(1.0 M)(1.25 m)(2200) + 6389 + 76 dB capacitance, which will reduce its effectiveness as a noise
filter. Therefore, practically, in reference voltage applications,
The resulting open loop Bode plot is shown in Figure 33.
the best solution appears to be to use a smaller value of
ǒ)Ǔ
The asymptotic plot may be expressed as the following
capacitance in low noise applications or a very large value to
equation:
provide noise filtering and a dominant pole rolloff of the
1 jf
ǒ ) Ǔǒ ) Ǔǒ ) Ǔ
system.
Av 615
1 jf
500 kHz
1 jf 1 jf
+
8.0 kHz 60 kHz 7.2 kHz
OUTLINE DIMENSIONS
LP SUFFIX
PLASTIC PACKAGE
CASE 29–04
(TO–92) NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
ISSUE AE Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
P DIMENSION D AND J APPLY BETWEEN L AND K
L MINIMUM. LEAD DIMENSION IS UNCONTROLLED
F IN P AND BEYOND DIMENSION K MINIMUM.
SEATING
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
X X D D 0.016 0.022 0.41 0.55
G F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H J H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
SECTION X–X
1 N 0.080 0.105 2.04 2.66
N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
8 5 NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
–B– 2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
1 4 3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
MILLIMETERS INCHES
F DIM MIN MAX MIN MAX
A 9.40 10.16 0.370 0.400
NOTE 2 –A– B 6.10 6.60 0.240 0.260
L C 3.94 4.45 0.155 0.175
D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070
G 2.54 BSC 0.100 BSC
C H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012
J K 2.92 3.43 0.115 0.135
–T– L 7.62 BSC 0.300 BSC
SEATING N M ––– 10_ ––– 10_
PLANE N 0.76 1.01 0.030 0.040
M
D K
H G
0.13 (0.005) M T A M B M
OUTLINE DIMENSIONS
DM SUFFIX
PLASTIC PACKAGE
CASE 846A–02 NOTES:
–A– (Micro–8) 6. DIMENSIONING AND TOLERANCING PER ANSI
ISSUE D Y14.5M, 1982.
7. CONTROLLING DIMENSION: MILLIMETER.
8. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
K –B– EXCEED 0.15 (0.006) PER SIDE.
9. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
J L
H
D SUFFIX
PLASTIC PACKAGE
CASE 751–06
(SOP–8)
ISSUE T
NOTES:
A D 1. DIMENSIONING AND TOLERANCING PER ASME
C
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
8 5 3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
E H 0.25 M B M
5. DIMENSION B DOES NOT INCLUDE DAMBAR
1 PROTRUSION. ALLOWABLE DAMBAR
4 PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
h X 45 _
B q MILLIMETERS
e DIM MIN MAX
A 1.35 1.75
A A1 0.10 0.25
C B 0.35 0.49
SEATING C 0.19 0.25
PLANE D 4.80 5.00
L E 3.80 4.00
0.10 e 1.27 BSC
H 5.80 6.20
A1 B h 0.25 0.50
L 0.40 1.25
0.25 M C B S A S
q 0_ 7_
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