MCC95-16io1B

Thyristor Module VRRM = 2x 1600 V

I TAV = 116 A
VT = 1.28 V

Phase leg

Part number

MCC95-16io1B

Backside: isolated

3 1 2
6 7 5 4

Features / Advantages: Applications: Package: TO-240AA

● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Isolation Voltage: 4800 V~
● Planar passivated chip ● Softstart AC motor control ● Industry standard outline
● Long-term stability ● DC Motor control ● RoHS compliant
● Direct Copper Bonded Al2O3-ceramic ● Power converter ● Soldering pins for PCB mounting
● AC power control ● Base plate: DCB ceramic
● Lighting and temperature control ● Reduced weight
● Advanced power cycling

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e

© 2020 IXYS all rights reserved

 MCC95-16io1B

Thyristor Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C 1700 V
VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 V
I R/D reverse current, drain current VR/D = 1600 V TVJ = 25°C 200 µA
VR/D = 1600 V TVJ = 125°C 5 mA
VT forward voltage drop I T = 150 A TVJ = 25°C 1.29 V
I T = 300 A 1.50 V
I T = 150 A TVJ = 125 °C 1.28 V
I T = 300 A 1.70 V
I TAV average forward current TC = 85 °C T VJ = 125 °C 116 A
I T(RMS) RMS forward current 180° sine 182 A
VT0 threshold voltage TVJ = 125 °C 0.85 V
for power loss calculation only
rT slope resistance 2.4 mΩ
R thJC thermal resistance junction to case 0.22 K/W
RthCH thermal resistance case to heatsink 0.2 K/W
Ptot total power dissipation TC = 25°C 455 W
I TSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 2.25 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 2.43 kA
t = 10 ms; (50 Hz), sine TVJ = 125 °C 1.92 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 2.07 kA
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 25.3 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 24.6 kA²s
t = 10 ms; (50 Hz), sine TVJ = 125 °C 18.3 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 17.7 kA²s
CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 119 pF
PGM max. gate power dissipation t P = 30 µs T C = 125 °C 10 W
t P = 300 µs 5 W
PGAV average gate power dissipation 0.5 W
(di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 250 A 150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs;
I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 116 A 500 A/µs
(dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM TVJ = 125°C 1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGT gate trigger voltage VD = 6 V TVJ = 25 °C 2.5 V
TVJ = -40 °C 2.6 V
I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA
TVJ = -40 °C 200 mA
VGD gate non-trigger voltage VD = ⅔ VDRM TVJ = 125°C 0.2 V
I GD gate non-trigger current 10 mA
IL latching current tp = 10 µs TVJ = 25 °C 450 mA
IG = 0.45 A; di G /dt = 0.45 A/µs
IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA
t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs
IG = 0.45 A; di G /dt = 0.45 A/µs
tq turn-off time VR = 100 V; I T = 150A; V = ⅔ VDRM TVJ =100 °C 185 µs
di/dt = 10 A/µs dv/dt = 20 V/µs t p = 200 µs

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e

© 2020 IXYS all rights reserved

 MCC95-16io1B

Package TO-240AA Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 200 A
TVJ virtual junction temperature -40 125 °C
T op operation temperature -40 100 °C
Tstg storage temperature -40 125 °C
Weight 81 g
MD mounting torque 2.5 4 Nm
MT terminal torque 2.5 4 Nm
d Spp/App terminal to terminal 13.0 9.7 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 16.0 16.0 mm
VISOL isolation voltage t = 1 second 4800 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 4000 V

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard MCC95-16io1B MCC95-16io1B Box 36 458228

Similar Part Package Voltage class

MCMA110P1600TA TO-240AA-1B 1600
MCMA140P1600TA TO-240AA-1B 1600

Equivalent Circuits for Simulation * on die level T VJ = 125°C

I V0 R0 Thyristor

V 0 max threshold voltage 0.85 V

R0 max slope resistance * 1.2 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e

© 2020 IXYS all rights reserved

 MCC95-16io1B

Outlines TO-240AA

3 1 2
6 7 5 4

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e

© 2020 IXYS all rights reserved

 MCC95-16io1B

Thyristor
2500 105 250
VR = 0 V

200 DC
2000 50 Hz 180 ° sin
80% VRRM 120 °
60 °
TVJ = 45°C
ITSM 150 30 °
TVJ = 125°C I 2t
1500 ITAVM
[A2s] 100
[A] TVJ = 45°C [A]
1000
50
TVJ = 125°C

500 104 0
0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910 0 25 50 75 100 125 150
t [s] t [ms] TC [°C]
Fig. 1 Surge overload current ITSM, Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current
IFSM: Crest value, t: duration at case temperature

250 10
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
RthKA K/W
3: IGT, TVJ = -40°C
200 0.4
0.6
0.8
1
150 1.2 VG
Ptot 1.5 3
2
2 6
DC
1 5
[W] 100 180 ° sin
3 [V] 1
4
120 °
60 °
30 °
50
4: PGAV = 0.5 W
5: PGM = 5 W
IGD, TVJ = 125°C 6: PGM = 10 W
0
0 50 100 150 0 50 100 0.1
1 10 100 1000 10000
ITAVM, IFAVM [A] Ta [°C] IG [mA]
Fig. 4 Power dissipation vs. on-state current & ambient temperature Fig. 5 Gate trigger characteristics
(per thyristor or diode)

1000 1000
TVJ = 25°C

RthKA K/W
800
0.03
0.06 typ. Limit
0.08
100
600 0.12
Ptot 0.15
tgd
0.3
0.5
[W] 400 [µs]
Circuit 10
B6
3x MCC95 or
200
3x MCD95

0 1
0 100 200 300 0 50 100 150 10 100 1000
IdAVM [A] Ta [°C] IG [mA]
Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct Fig. 7 Gate controlled delay time
output current and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e

© 2020 IXYS all rights reserved

 MCC95-16io1B

Thyristor
1200
Circuit
W3 RthKA K/W
1000 3x MCC95 or 0.03
3x MCD95 0.06
0.08
800 0.12
0.15
Ptot 0.3
600 0.5

[W]
400

200

0
0 50 100 150 200 250 0 50 100 150
IRMS [A] Ta [°C]
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature

0.30
RthJC for various conduction angles d:

0.25 d RthJC [K/W]

DC 0.22
0.20 180° 0.23
30°
120° 0.25
60°
ZthJC 120° 60° 0.27
0.15 180° 30° 0.28
DC
[K/W]
0.10 Constants for ZthJC calculation:
i Rthi [K/W] ti [s]
0.05 1 0.0066 0.0019
2 0.0678 0.0477
0.00 3 0.1456 0.3440
10-3 10 -2 10 -1 10 0 10 1 10 2
t [s]
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)

0.5 RthJK for various conduction angles d:

d RthJK [K/W]
0.4 DC 0.42
30°
180° 0.43
60°
120°
120° 0.45
ZthJK 0.3 180° 60° 0.47
DC 30° 0.48

[K/W] 0.2 Constants for ZthJK calculation:

i Rthi [K/W] ti [s]
0.1 1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.3440
0.0
4 0.2000 1.3200
10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3

t [s]
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e

© 2020 IXYS all rights reserved