WEBINAR SUMMARY

Understanding and Solving Thermal

Design Issues in MOSFET
Applications
Tom Wolf, Technical Applications Manager, Nexperia

KEY TAKEAWAYS
May 19, 2021

ƒ  Brushless DC motors offer a real-world illustration of MOSFETs in action.

ƒ  When selecting MOSFETs for brushless DC motors, designers must keep several factors in mind.
ƒ  For motor control, key MOSFET requirements fall into eight categories.
ƒ  Resistor capacitor modeling is a cost-effective way to conduct thermal modeling.
ƒ  Thermal resistance and thermal capacitance are foundational concepts for RC modeling.
ƒ  RC models are better suited for thermal simulations of real-world situations than Zth curves.
ƒ  RC model-based simulations in SPICE predict MOSFET junction temperatures under normal operating
conditions.

ƒ  Nexperia’s LFPAK concept revolutionizes PCB design and eliminates the need for top side cooling.

in partnership with
UNDERSTANDING AND SOLVING THERMAL DESIGN ISSUES IN MOSFET APPLICATIONS OVERVIEW
MOSFETs are the “go to” device for driving motors, solenoids, and other high-power devices. Whenever
you work with MOSFETs, heat is always a concern. When selecting a MOSFET, printed circuit board
(PCB) designers must understand how much power they will transfer through the MOSFET and the
tolerable temperatures. With that information and data about how the motor will be used, it is possible
to build simulations using free tools to predict the amount of heat that will be generated. Based on that
information, designers can create the optimal PCB configuration for their applications.

CONTEXT
Tom Wolf discussed the thermal issues affecting MOSFET applications and how to design solutions
for them. He shared how to use datasheet parameters to select the correct MOSFET, how to simu-
late thermal design with common software tools, and how to optimize printed circuit board designs.

KEY TAKEAWAYS
Brushless DC motors offer a real-world illustration of MOSFETs in action.
Brushed DC and AC motor design has been in use for almost 200 years. A rotor spins in the middle and a
permanent magnet is located outside of that. The rotor changes its electromagnetic field to repel or attract
against the fixed magnet on the outside. This is accomplished by a commutator with brushes. As the
motor turns, the brushes select different parts of the commutator and these turn on different magnets in
the spinning electromagnetic section. As these react with the permanent magnet, the motor turns.

Today, many applications are switching to brushless DC motors. With a brushless motor, the entire
device is turned inside out. The permanent magnet spins on the inside. The electromagnet is on the
outside. The motor isn’t limited by the mechanical spinning of the brushes and the associated wear
and tear. Brushless motors are much more efficient because it is possible to spin a solid chunk of
magnetic material very quickly.

However, brushless motors are more complex. These engines don’t use a commutator to turn mag-
nets on. Since the electromagnets are on the outside of brushless motors, they are digitally control-
lable by a CPU. As a result, they require a lot of electronics, including MOSFETs.

The coils around the outside of the motor can be switched from north to south and south to north.
Instead of putting a separate control on each magnet, every third one can be connected in a Wye con-
figuration. When one of the three sets of coils is energized, the magnet inside spins to that condition.
Figure 1: Brushless DC Motor – 3-Phase Basic Operation

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UNDERSTANDING AND SOLVING THERMAL DESIGN ISSUES IN MOSFET APPLICATIONS The phase controller for a brushless DC motor almost always includes six MOSFETs. Each phase has
two MOSFETs assigned to it. One is connected to the positive supply of the battery and one is
connected to the negative supply. It is possible to flip the polarity of each of the three magnets
independently by using the six MOSFETs.
Figure 2: Brushless DC Motor - Typical Control Schematic

When selecting MOSFETs for brushless DC motors, designers must keep several
factors in mind.
Six factors associated with MOSFETs used in brushless DC motors are:

1. Motor windings are always connected to the supply rails by the MOSFET body diodes. This
can create repetitive avalanche conditions. Avalanche occurs when the drain and source of the
MOSFET are reversed. The MOSFET must tolerate electricity being forced back through it.

2. Low frequency PWM switching (e.g., 10 to 20 kHz) means fast switching isn’t an issue. It is not
difficult to find a MOSFET that can switch at these speeds.

3. MOSFETs must be rated for the maximum voltage of a fully charged battery. The voltage of
the battery determines the MOSFET’s size and voltage rating. For 5-cell (18 V nominal, 15-21 V
range) batteries, 30 V MOSFETs are common. For very noisy environments, a 40 V MOSFET may
be more appropriate.

4. A low RDS(on) is required to keep heat low. When resistance is low, current, wattage, and heat are
less likely to be issues. The goal is to turn current into energy, rather than heat.

5. High (100 A+) current capability is needed to cope with rotor stall currents. When a rotor locks
up, the current can increase to hundreds of amps in a millisecond. The MOSFET must tolerate that
surge.

6. Soft switching is required for good electromagnetic control (EMC). Motors shouldn’t generate
so much electromagnetic noise that they shut down nearby radios and televisions.

For motor control, key MOSFET requirements fall into eight categories.
1. Breakdown voltage (VDS = Voltage drain to source). Higher power solutions use higher battery
voltages. Today, 30 V and 40 V MOSFETs are mainstream. A 60 V battery used in garden tools or
heavy duty tools requires a 100 V MOSFET. New generations of applications will introduce new
breakdown voltage requirements for MOSFETs.

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UNDERSTANDING AND SOLVING THERMAL DESIGN ISSUES IN MOSFET APPLICATIONS 2. Max current (ID rating). This is the maximum current that can be put through a device. This rating
is the most important for managing fault conditions like locked rotors. The MOSFET must survive
until over current protection (OCP) activates. This typically takes between two milliseconds to
several seconds.

3. Thermal performance. Low thermal resistance (Rth) allows for better performance at higher
temperatures. It enables heat to come out of the junction as quickly as possible, so components
don’t melt. Higher Tj(max) enables improved ID(max), Ptot(max), repetitive avalanche, and safe
operating areas. Low RDS(on) is required to manage temperature, rather than system efficiency.

4. Gate drive. Logic level devices or standard level devices can be used to turn a MOSFET off and on.
A logic level device that runs at 4.5 volts to turn a gate on is useful for low battery voltage. Even if
batteries are nearly dead, control is still possible. A standard level device operates at 10 volts and
supports immunity for false turn-ons if a noise pulse of five volts occurs. Today, 10-volt devices are
the standard. It is important to remember that the gate threshold voltage can change with age and
temperature. Circuits must compensate as parts get hotter and older.

5. Safe operating area (SOA). MOSFETs are subjected to the most stress during off and on transi-
tions. SOA is important in fault conditions where collapsing battery voltage means the gate isn’t
driven so hard.

6. Size. There is a trend toward greater power density which is enabled by RDS(on) and thermal perfor-
mance. A common standard for MOSFETs today is five by six millimeters. Smaller packages are
also available. The appropriate size depends, in part, on how much space is available.

7. Avalanche rating. Motor control applications can take MOSFETs into avalanche. This may occur when
drain voltage exceeds source voltage. A high avalanche rating (EDS(AL)S) is preferred. It can be difficult to
compare avalanche ratings between manufacturers, since ratings may be cited at different ID.

8. Spike control. The amount of noise that a circuit makes when it turns off and on is relevant for
FCC certification. A well-designed circuit will be silent. Managing reverse recovery can help. Spikes
should be as low as possible and recovery waveform should be symmetrical (S-Factor = 1).
Figure 3: MOSFET Part Number Table

Resistor capacitor modeling is a cost-effective way to conduct thermal modeling.

Device designers perform thermal analysis because power flowing through any semiconductor device
generates heat. Excess heat may cause reliability issues and components can even melt. Thermal
analysis enables designers to anticipate the temperatures that components will reach, given certain
power loading conditions. With this knowledge, they can select components with suitable thermal
properties.

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UNDERSTANDING AND SOLVING THERMAL DESIGN ISSUES IN MOSFET APPLICATIONS There are two primary ways to conduct thermal modeling: finite element analysis (FEA) and resistor
capacitor (RC) modeling. Although FEA is highly accurate, it is also expensive and requires extensive
training. RC modeling can be performed at no cost, by downloading LTspice from the web.
Figure 4: FEA vs.
RC Modeling

For no cost, you can use RC modeling to build a pretty good simulation of how
your system will operate before soldering any parts on the board.
Tom Wolf, Nexperia

Thermal resistance and thermal capacitance are foundational concepts for RC

modeling.
Thermal resistance is analogous to electrical resistance. In addition, thermal capacitance is analogous
to electrical capacitance. It depends on the mass and specific heat capacity of the body.
Figure 5: Translating Electrical Resistance and Capacitance to Thermal Resistance and Capacitance

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UNDERSTANDING AND SOLVING THERMAL DESIGN ISSUES IN MOSFET APPLICATIONS Based on these concepts and RC modeling, it is possible to use electrical equivalents to simulate the
heat from the junction of a MOSFET to the PCB, through the thermal vias, out to the heatsink, and
out to the airflow or liquid cool.

RC models leverage the Foster model to predict the thermal impedance of MOSFET devices and the
Cauer model to predict the thermal impedance of PCBs. Nexperia supplies Foster models, while
heatsink and solder suppliers often provide Cauer models. In addition, variables for the Foster and
Cauer models are available for free on the Nexperia website. Designers can take a Nexperia MOSFET
device and plug its Foster model R and C values into the RC model running on SPICE.

RC models are better suited for thermal simulations of real-world situations than
Zth curves.
The thermal impedance curve or “Zth curve” for a semiconductor device is based on a series of RC
curves. Zth graphs, however, only work for simple square pulses. Most real-world cases, however,
don’t have square pulses. As a result, it is difficult to predict the actual thermal behavior using a Zth
graph. In these situations, RC thermal simulation can be useful.

RC model-based simulations in SPICE predict MOSFET junction temperatures

under normal operating conditions.
Five steps for using RC models in SPICE are:

1. Download the RC thermal model from the Nexperia website.

2. Configure the RC thermal model in the SPICE simulation software.

3. Set the initial junction temperature. The DC voltage source Vamb corresponds to the initial junction
temperatures. For example, 25 V equates to 25 degrees Celsius.

4. The current source represents the power the device will absorb. This can be produced from a file
or from the simulation circuit.

5. Go to the simulation.

In the example simulation results below, the blue curve represents the current source and the green
curve represents the junction temperature of the MOSFET. In this example, it is clear that 10ms is not
enough for the MOSFET to cool down.
Figure 6: Simulation Results

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UNDERSTANDING AND SOLVING THERMAL DESIGN ISSUES IN MOSFET APPLICATIONS RC thermal models represent the thermal impedance curve in product datasheets. Using those RCs,
it is possible to simulate how a part will perform for a specific use case. Every Nexperia MOSFET has
downloadable thermal models.

It is important to remember that SPICE models simulate for normal operating conditions. In the real
world, however, parameters can change as power goes through the MOSFET. Designers must com-
pensate for this.

Nexperia’s LFPAK concept revolutionizes PCB design and eliminates the need for
top side cooling.
Nexperia LFPAK eliminates wire bonds from MOSFETs. Solid copper connections are used to source,
drain, and gate. Unlike other MOSFET brands, Nexperia MOSFETs have a second copper clip on top
of the silicon. This thermally connected source clip is where the voltage goes in. Around 60% to 70%
of the junction heat goes out the drain side and the other 30% to 40% comes out the top and can be
routed into the board. Top side cooling is unnecessary.

Tom Wolf made several additional observations about PCB design with Nexperia MOSFETs:

ƒ Adding more material under the source cools Nexperia MOSFET junctions. This is impossible
with other MOSFET brands. With Nexperia, it is possible to get more heat out of the source simply
by changing the PCB design. This means designers can put more power into the MOSFET without
overheating the junction.

ƒ Most of the copper should be on the drain, but copper should also be added under the
source. When heat flows out of the MOSFET in a 360-degree fashion, that provides more cooling
areas. Other options to optimize cooling include increasing the copper thickness and using a high
conductive FR-4 material for the FR-4 PCB board.

ƒ Nexperia LFPAK enables PCB designers to optimize the junction temperature. By adding
multiple layers of thermal vias below Nexperia MOSFETs, it is possible to spread heat further
across the board and through inner layers of the board. This reduces the junction temperature. With
careful layout, PCB designers can get the Rthj-a close to 36 k/W which is approaching the maxi-
mum ideal value of 34.9 k/W.

By optimizing the PCB design, I can get the maximum amount of heat out of
the system, which means I can put the maximum amount of power in front of it
and I can build the strongest brushless DC motor controller for my application.
Tom Wolf, Nexperia

ADDITIONAL INFORMATION
ƒ MOSFET & GaN FET Applications Handbook. This free resource for power design engineers is
downloadable from the Nexperia website.

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UNDERSTANDING AND SOLVING THERMAL DESIGN ISSUES IN MOSFET APPLICATIONS BIOGRAPHY
Tom Wolf
Technical Applications Manager, Nexperia

Tom Wolf is a Technical Applications Manager for Nexperia. He holds a B.S. in Electrical and
Computing Engineering specializing in microelectronics and robotics. Tom has designed automation
systems for IBM and GE and provided application design engineering for semiconductor manufactur-
ers Intel, AMD, NEC, and Philips/NXP. In his spare time he consults on video production and technical
theater (lighting/sound/special effects).

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