1N5417.

1N5418
Fast Silicon Mesa Rectifiers

Features
D Glass passivated junction
D Hermetically sealed package
D Soft recovery characteristics
D Low reverse current
D Low forward voltage drop
D High pulse current capability

Applications
Fast rectifiers in S.M.P.S
94 9588

Absolute Maximum Ratings

Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage,
g , repetitive
p ppeak 1N5417 VR=VRRM 200 V
reverse voltage 1N5418 VR=VRRM 400 V
Peak forward surge current tp=10ms, single IFSM 100 A
half sine wave
Average forward current Tamb=45°C IFAV 3 A
Junction temperature Tj 175 °C
Storage temperature range Tstg –65...+175 °C

Maximum Thermal Resistance

Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant RthJA 25 K/W
on PC board with spacing 37.5mm RthJA 70 K/W

Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage
g IF=3A VF 1.1 V
IF=9A VF 1.5 V
Reverse current VR=VRRM IR 1 mA
VR=VRRM, Tj=100°C IR 20 mA
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A trr 75 100 ns

TELEFUNKEN Semiconductors 1 (4)

Rev. A1, 12-Dec-94
1N5417.1N5418
Typical Characteristics (Tj = 25_C unless otherwise specified)
50 3 4

I FAV– Average Forward Current ( A )

3

2
37.5 50

1
v
f 20kHz
RthJA=25K/W
0
94 9087 0 40 80 120 160 200
7 2
94 9471 Tamb – Ambient Temperature ( °C )

Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm, Figure 4. Average Forward Current vs. Ambient Temperature
RthJA 70 K/W x
R thJA – Therm. Resist. Junction / Ambient ( K/W )

40 1000

Scattering Limit
I R – Reverse Current ( mA )

30 100

20 10
l l

10 1

VR = VR RM
0 TL=constant 0.1
0 5 10 15 20 25 30 0 40 80 120 160 200
94 9466 l – Lead Length ( mm ) 94 9469 Tj – Junction Temperature ( °C )

Figure 2. Thermal Resistance vs. Lead Length Figure 5. Reverse Current vs. Junction Temperature

100
I FAV– Average Forward Current ( A )

2.0
Tj = 175°C
IF – Forward Current ( A )

1.6 10

1.2
1

0.8
Tj = 25°C

v
0.1
0.4 f 20kHz
RthJA=70K/W
0 0.01
0 40 80 120 160 200 0 0.6 1.2 1.8 2.4 3.0
94 9468 Tamb – Ambient Temperature ( °C ) 94 9472 VF – Forward Voltage ( V )

Figure 3. Average Forward Current vs. Ambient Temperature Figure 6. Forward Current vs. Forward Voltage

2 (4) TELEFUNKEN Semiconductors

Rev. A1, 12-Dec-94
 1N5417.1N5418
Z thp – Thermal Resistance for Pulse Cond. (K/W)

1000

VR RM=600V
RthJA=70K/W
100

tp/T=0.5
Tamb= 25°C
tp/T=0.2
70°C
10 tp/T=0.1
tp/T=0.05
0.02 100°C 45°C
tp/T=0.01
1
10–4 10–3 10–2 10–1 100 101 102 100 101 102
IFRM – Repetitive Peak
94 9562 tp – Pulse Length ( s ) Forward Current ( A )

Figure 7. Thermal Response

Dimensions in mm
Sintered Glass Case Cathode Identification ∅ 4.3 max.
SOD 64
Weight max. 1.0 g technical drawings
according to DIN
specifications

∅ 1.35 max.

26 min. 4.2 max. 26 min. 94 9587

TELEFUNKEN Semiconductors 3 (4)

Rev. A1, 12-Dec-94
 1N5417.1N5418
Ozone Depleting Substances Policy Statement

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).

The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

4 (4) TELEFUNKEN Semiconductors

Rev. A1, 12-Dec-94