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DATA SHEET
handbook, 2 columns
M3D116
1N5059 to 1N5062
Controlled avalanche rectifiers
Product specification 1996 Jun 19
Supersedes data of April 1992
Philips Semiconductors Product specification
and fatigue free as coefficients of
• Glass passivated Rugged glass package, using a high
expansion of all used parts are
• High maximum operating temperature alloyed construction.
matched.
temperature
• Low leakage current
2/3 page k(Datasheet) a
• Excellent stability
• Guaranteed avalanche energy MAM047
absorption capability
Fig.1 Simplified outline (SOD57) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
VRWM crest working reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
VR continuous reverse voltage
1N5059 − 200 V
1N5060 − 400 V
1N5061 − 600 V
1N5062 − 800 V
IF(AV) average forward current Ttp = 45 °C; − 2.0 A
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
Tamb = 80 °C; PCB mounting − 0.8 A
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
IFSM non-repetitive peak forward current t = 10 ms half sinewave − 50 A
ERSM non-repetitive peak reverse avalanche L = 120 mH; Tj = Tj max prior to − 20 mJ
energy surge; inductive load switched off
Tstg storage temperature −65 +175 °C
Tj junction temperature see Fig.5 −65 +175 °C
1996 Jun 19 2
Philips Semiconductors Product specification
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
1996 Jun 19 3
Philips Semiconductors Product specification
GRAPHICAL DATA
MBG044 MBG054
3 1.6
handbook, halfpage handbook, halfpage
IF(AV)
IF(AV)
(A)
(A)
1.2
2
0.8
0.4
0 0
0 40 80 120 160 200 0 40 80 120 160 200
Ttp (°C) Tamb (°C)
Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward
current as a function of tie-point temperature current as a function of ambient temperature
(including losses due to reverse leakage). (including losses due to reverse leakage).
MGC745 MBH388
4 200
handbook, halfpage handbook, halfpage
P
(W)
Tj
3
2 1.57 1.42 (°C)
2.5
2 100
a=3 59 60 61 62
0 0
0 1 2 3 0 400 800 VR (V) 1200
IF(AV) (A)
1996 Jun 19 4
Philips Semiconductors Product specification
MGC735 MGC734
15 3
10halfpage
handbook, halfpage handbook,
IF IR
(A) (µA)
2
10
10
max
10
5
1
0 10 −1
0 1 2 0 40 80 120 160 200
VF (V)
Tj (oC)
Fig.6 Forward current as a function of forward Fig.7 Reverse current as a function of junction
voltage; maximum values. temperature; maximum values.
MBG031
10 2
handbook, halfpage
50
handbook, halfpage
25
Cd
(pF)
10 50
3
1
1 10 VR (V) 10 2
MGA200
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values. Fig.9 Device mounted on a printed-circuit board.
1996 Jun 19 5
Philips Semiconductors Product specification
1Ω
50 Ω 0
t
0.25
0.5
IR
(A)
MAM057
1.0
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 Jun 19 6
Philips Semiconductors Product specification
,
PACKAGE OUTLINE
Dimensions in mm.
Fig.11 SOD57.
DEFINITIONS
1996 Jun 19 7