Scli Hat m N

dy Generd, tw

Vop
NANDGak
- -
Vow
A
Rn

F No Cale-
u r o +pu
tro a R teT p R.2 Pp
NAND OrsE Cae
For ale: Consi de
oukput nade
douthey ho
nan t
tha
h NoT gk, FETS
we kave o i en CFeTGnt op
S CperC C: F on =op)
Cp
CD Fer
2

n 3FETS
NARD,3 as fouthes to awtput hade

3Co ) CFET

NAND .Rp)Fer
aund p 2. 2 Ro pu
NAND
t NAND gak
Rise ine dalay

NANNP

FR Time daluy ( ttNAn)e) ámpj Ct).

tor NOTJak, fot u
e 2.2 R
t 22 Rn CFer

FoNAND8k C

a (R) r e r )
must be
Ba- hwo tansistvs (FEL)
Nh 2P
2R
FETs a Gnne thd
ON,and hure
Sere, Httt Oh
TNAND
beum a,
fo=.2 R,CFer)
=
3tf
NAND
 NAND gak, (m)
F F r standand 12DO

tf3tfo t 2*nuL
r NAND Gale)
Cfect of Saliy m=s
CpET
Rp p o
Rise Tin
m

tro-A1Rp FeT Pu- 2 p

Rp CFEr tro
=
= &-2
troy 2.3. CFET

nd fenm P3 2.2
u )

brgbrot

FTine 8 tfo +2 dng

nu .2R,
m-l G =
a Rn GFE

Ra.)Ter
n 2
Anu
3
ml,n-3.2 K
In onunl
NAND a t
t'N'p

t -( ,
nu
Cu
Note uput apauitauu CiuCmin

for saliy tachw

Cn Cmin
mzed FE
that uyy
Tr an N p t NAND 4ak

Gn Crin
 9,1
NoR ake

tru t» 1 pu Cu tu- tfo t nu C

NOT e -

tre2.Rp(pEr tp 2.2 Rn CFer

nu . 2R,
dpu- Kp

orNoR gall-
node
3FETs tutu oukput

3p 3fEr
Riue Timi

NoR
C

kYo jo 2.2. 2R,). 3 CFer I en

22Rp. CFe)3
3 tro

Po 9.2.(2F)
2pu

t 3tn t pu C

all ine: e No

Fer
 For standasNgak m
1)
tr Rp CFET, pu 2Pp

F(3)4%t u C
m=)
Effect Scliy - ( f

3.(

FEI JFET
Rise Tin e
t m
2
*p C
t =
3 tbo t
rey a. ()eer)
(FET = tro
2Rp

ndam p2.2 -(

Fal ime- for m3, t =3tn3

te=.RrET)
tto
n
 Noa ak
t r 'nnput

N) t + (

(N1) +g 3

taudad

Capau ta~u Cinmin

Note
Cn m Cmin
f
uli a
luli case
e
clealy
alysis /2q,uioy Rie tme
4 hne
Condusin The
tima denly 4 Rie
timiy (U
ho
k e Suoitehiy oh
, tantt)
Capautane
at
depedet
p e r n d e d &

p pau
deln)
Qola)
Qud
inpub N fan i )
-ih)
Numbe o
fatr m)
Saliny
Tvarsistr