MULTIPLE CHOICE QUESTIONS FOR CHAPTER 14

All questions have only one correct answer

1. In normal operation, the junctions of a p-n-p transistor are:

[a] both forward biased
[b] base-emitter forward biased and base-collector reverse biased
[c] both reverse biased
[d] base-collector forward biased and base- emitter reverse biased

2. In normal operation, the junctions of an n-p-n transistor are:

[a] both forward biased
[b] base-emitter forward biased and base collector reverse biased
[c] both reverse biased
[d] base-collector forward biased and base- emitter reverse biased

3. The current flow across the base-emitter junction of a p-n-p transistor:

[a] mainly electrons
[b] equal numbers of holes and electrons
[c] mainly holes
[d] the leakage current

4. The current flow across the base-emitter junction of an n-p-n transistor consists of
[a] mainly electrons
[b] equal numbers of holes and electrons
[c] mainly holes
[d] the leakage current

5. In normal operation an n-p-n transistor connected in common-base configuration has:

[a] the emitter at a lower potential than the base
[b] the collector at a lower potential than the base
[c] the base at a lower potential than the emitter
[d] the collector at a lower potential than the emitter

6. In normal operation, a p-n-p transistor connected in common-base configuration has:

[a] the emitter at a lower potential than the base
[b] the collector at a higher potential than the base
[c] the base at a higher potential than the emitter
[d] the collector at a lower potential than the emitter

7. If the per unit value of electrons which leave the emitter and pass to the collector is 0.9 in an
n-p-n transistor and the emitter current is 4 mA, then:
[a] the base current is approximately 4.4 mA
[b] the collector current is approximately 3.6 mA
[c] the collector current is approximately 4.4 mA
[d] the base current is approximately 3.6 mA

8. The base region of a p-n-p transistor is:

[a] very thin and heavily doped with holes
[b] very thin and heavily doped with electrons
[c] very thin and lightly doped with holes
[d] very thin and lightly doped with electrons

9. The voltage drop across the base-emitter junction of a p-n-p silicon transistor in normal
operation is about:
[a] 200 mV
[b] 600 mV
[c] zero
[d] 4.4V

10. For a p-n-p transistor:

[a] the number of majority carriers crossing the base emitter junction largely depends on the
collector voltage
[b] in common-base configuration, the collector current is proportional to the collector-base
voltage
[c] in common-emitter configuration, the base current is less than the base current in common-
base configuration
[d] the collector current flow is independent of the emitter current flow for a given value of
collector-base voltage

11. If R L in Figure 1 is short-circuited, the ...

[a] amplifier signal output would fall to zero
[b] collector current would fall to zero
[c] transistor would overload

Figure 1

12. If R2 in Figure 1 is open-circuited the ...

[a] amplifier signal output would fall to zero
[b] operating point would be affected and the signal would distort
[c] input signal would not be applied to the base

Figure 1

13. A voltmeter connected across R E in Figure 1 reads zero. Most probably ...
[a] the transistor base-emitter junction has short-circuited
[b] R L has open-circuited
[c] R2 has short-circuited

14. A voltmeter connected across R L in Figure 1 reads zero. Most probably ...
[a] the V CC supply battery is flat
[b] the base collector junction of the transistor has gone open circuit
[c] R L has open-circuited

15. If R E in Figure 1 is short-circuited the ...

[a] load line would be unaffected
[b] load line would be affected

16. With reference to the output characteristics shown in Figure 2, the load line represents a
load resistor of:
[a] 1 k
[b] 2 k
[c] 3 k
[d] 0.5 k

Figure 2

17. With reference to the output characteristics shown in Figure 2, the no-signal collector
dissipation for the operating point marked P is:
[a] 12 mW
[b] 15 mW
[c] 18 mW
[d] 21 mW

Figure 2

18. With reference to the output characteristics shown in Figure 2, the greatest permissible
 peak input current would be about
[a] 30 A
[b] 35 A
[c] 60 A
[d] 80 A

Figure 2

19. With reference to the output characteristics shown in Figure 2, the greatest possible peak
output voltage would then be about
[a] 5.2 V
[b] 6.5 V
[c] 8.8 V
[d] 13 V

Figure 2

20. With reference to the output characteristics shown in Figure 2, the power dissipated in the
load resistor under no-signal conditions is:
[a] 16 mW
[b] 18 mW
[c] 20 mW
[d] 22 mW

Figure 2