3 - Elasticity - Structure

HỆ THỐNG VI CƠ ĐIỆN TỬ (ELT3100)
MICROELECTROMECHANICAL SYSTEMS
(MEMS)
Elasticity - Structures
University of Engineering and Technology

Vietnam National University, Hanoi
VNU - UET
Faculty of Electronics and Telecommunications MicroElectroMechanical Systems
Elasticity
Stress - Pa
•Stress is defined
microscopically as the
force per unit area
acting on the surface of
a differential volume
element of a solid body
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Elasticity
Strain
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Elasticity
Strain
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Shear stress that acts parallel to a surface. It can
cause one object to slide over another. It also
tends to deform originally rectangular objects
into parallelograms. The most general definition
is that shear acts to change the angles in an
object. Shear strain = force (F)/ area(A)
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Elastic Constants for Isotropic Materials
Isotropic materials are those with no internal

ordering or structure that would make the
stress-strain responses depend on direction.
For these materials, a uniaxial stress results in
a uniaxial strain that is proportional to the
stress. The proportionality constant is called
Young’s modulus and is denoted by E. A
normal stress in the direction is linearly
related to the uniaxial strain in the direction,
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Poisson ratio
 is the Poisson ratio. The Poisson ratio is dimensionless,

and typically has a value between 0 and 0.5
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Poisson ratio
For the case of small strains, this becomes
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Isotropic Elasticity in Three Dimensions
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Plane Stress
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Tensile stress vs Compressive stress
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Plane Stress
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Elastic Constants for Anisotropic Materials
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Silicon Stiffness coefficient
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Thermal Expansion and Thin-Film Stress
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Selected Mechanical Property Data
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Material Behavior at Large Strains
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Plastic Deformation
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Stress-Strain Relation
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UIUC
Piezoresistive effect
The piezoresistive effect is a change in

the electrical resistivity of
a semiconductor or metal when mechanical
strain is applied.
The change of electrical resistance in metal
devices due to an applied mechanical load
was first discovered in 1856 by Lord Kelvin.
The large piezoresistive effect in silicon and
germanium was first discovered in 1954
(Smith 1954).
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Piezoresistive Sensing
Also called strain sensors or strain gauges.

A strain gauge is a device used to measure how much
a component distorts under loading.
The electrical resistance of a sensing material
changes as a result of applied strains.
A strain gauge is a conductor or semiconductor

material that can be directly fabricated on the sensor
itself or bonded with the sensor.
In macroscopic systems, such as strain sensors in
machine tools, aircraft, strain gauges are most likely
bonded onto parts.
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Physical Causes of Piezoresistivity
Change of relative dimensions, as the resistance is related

to length and cross-sectional area (local).
 L L
l dR  dL  d  2 dA
R A A A
A dR dL d dA
  
R L  A
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Why Electrical Conductivity Change With
Stress/Strain?
2
h
Change of electrical m*  2
conductivity and d E / dk 2
resistivity as a result of s
qt
crystal lattice m*
deformation.
Strain causes the shape
of energy band curves to
change, therefore
changing the effective
mass, m*. Therefore
electrical conductivity s
changes.
Crystal bandgap structure
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Basic Formula for Describing Piezoresistivity
G is called Gauge Factor of a piezoresistor. It determines the

amplification factor between strain and resistance change.
R L
 G
R L
R stresss  E
R
G R 
l R
l
Material Gauge factor

Metal foil 1-5
Semiconductor (crystal) 80-150
Diffused semiconductor 10-200
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Metal Strain Gauge
For metals, the resistivity is not changed
significantly by the stress. The gauge factor
is believed to be contributed by the change
of dimensions. These may be made from
thin wires or metal films that may be directly
fabricated on top of micro structures.
Typical strain gauge pattern is shown in the
following figure. Thin film strain gauges are
typically fabricated on top of flexible plastic
substrates and glued to surfaces.
etched foil gauges
These strain gauges consist of a conduction
path etched onto metal clad plastic film. The
strain gauges are designed to be glued, using
very special procedures onto the component
to be tested. When the component stretches,
the strain gauge will also stretch as will the
etched conduction path.
An interactive guide can be found at
http://www.measurementsgroup.com/guide/index.htm
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Two Primary Classes of Piezo-resistor Configuration
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Semiconductor Strain Gauge
The very first semiconductor strain gauge used

a doped silicon strip attached to a membrane of
another material.
In semiconductor strain gauges, the
piezoresistive effect is very large, leading to
much higher G.
P-type silicon has a G up to 200 and n-type has
a negative G of down to -140.
Strain gauges can be locally fabricated in bulk
silicon through ion implantation or diffusion
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Why Use Semiconductor Strain Gauge
Higher G than metal alloy strain gauges

Easily fabricated with controlled
performance specifications using precise ion
implantation and diffusion
Easily integratable with silicon, a material
used for sensors and signal processing.
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Single Crystal Silicon Vs. Polycrystal
Single Crystal Silicon: Uniform crystal orientation throughout the entire
material.
Method of growth: heat melt (bulk); epitaxy (thin film)
Polycrystal silicon: crystal orientation exist with in individual grains
which are separated by grain boundaries.
Methods of growth: low pressure chemical vapor deposition; sputtering (like
a metal).
Single crystal Polycrystal

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The piezoresistive coefficients
Ohm’s law in matrix form
• The relation between changes of resistivity and the applied

stress and strain
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Piezoresistivity Components
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Methods for Compensating Temperature Effect
Doped silicon strain sensors are also sensitive

to temperature. In order to isolate the effect of
temperature and strain, it is important to
compensate for the temperature effect.
Common technique: Use a reference resistor
which is subject to the same temperature but
not the strain. The difference of signal between
these two sensors give overall effect due to
strain.
Second technique: Wheatstone bridge
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Wheatstone Bridge Circuit -
Transforming resistance change to voltage change
Common configuration.
Rs  R  R
 R2 R4 
Vout    Vin
R
 1  R2 R3  R4 
 R R 
Vout    Vin 
 R  ( R   R ) 2 R 
  R / 2 
 R  Vout   Vin
 (R  )   2 R  R 
 R 1 R 2
  Vin    Vin
 2 R  R 2   2 R   R 2( R   R Temperature in-sensitive!!
 ) 
 2 
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Axially Loaded Beams
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Axially Loaded Beams
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Beams With Varying Cross-section
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Stresses on Inclined Sections
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Stresses on Inclined Sections
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Bending of Beams
Types of Support
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Bending of Beams
Types of Loads
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Reaction Forces and Moments
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Pure Bending of a Transversely Loaded Beam
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Differential Equation for Beam Bending
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Elementary Solutions of the Beam Equation
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Strain Gauge Made of Single Crystal Silicon
- A Pressure Sensor
Process
Etch backside to form
diaphragm with
controlled thickness.
Silicon is selectively
doped in the region
where stress is
greatest.
Difference of
pressure across the
diaphragm will cause
stress concentration.
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Piezoresistive Accelerometer
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Condition for Mechanical Equilibrium
Total force on a given mechanical member is zero.
Total moment on a given mechanical member is
zero.
Tensile
Compressive
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Relationship between maximum stress and applied
force
The stress within the cross-section provide counter moment (torque) to
balance the torque created by the applied force.
The magnitude of the torque is force times the length of arm, l.
Therefore M=Fl.
du y y 1 M
s  
dx ds 
 y/   y"x
 EI
t Mt
smax   ( y  ) 
2 2 EI
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Example 6.2
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VNU - UET MASS
UIUC
Good vs. Bad Designs
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When one tried to bend a cantilever beam,
the failure always occurs at the anchored end
and the surface of the beam. Why?
Because the longitudinal stress is the

greatest at that point.
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Comments on Mechanical Failure
Two failure modes

Fracture
if the strain in the material exceed the fracture strain, the material will
undergo catastrophic failure due to fracture.
In design, it is important to not only design the mechanical structure
accurately but also to leave safety margins.
Fatigue
If repeated cycle of force is applied to a mechanical member, with the
induced strain much lower than that of the fracture strain, the member
may failure after repeated cycles.
Mechanism: microscopic defects (bubbles, dislocations) amplifies over
time and causes stress concentration (re-distribution of stress). The
defects are often hidden underneath the surface of the material.
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Stress-Strain Curve
Silicon is a strong material, not a tough

material.
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Case 6.1: Analysis of Accelerometer
Acceleration induced force F, F=ma.
The force induces stress at the fixed end of the cantilever beam.
The stress is detected by chance in resistance.
Assumptions
• assume entire resistance is
concentrated at the
anchor;
• for moment of inertia at
the end, ignore the
thickness of the resistor.
• Assume the stress on the
resistor is the maximum
value.
• The proof mass is rigid. It
does not bend because of
the significant thickness
and width.
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Analysis of Sensitivity
Under a given a, the force has a magnitude F  ma
The moment applied at the fixed end of the beam is L
M  F (l  )
2
Therefore the maximum strain, which is the strain experienced by the

resistor, is
 L
F  l  t 6 F (l  L )t
Mt 2
 max    3
 3
2
2 EI Ewt Ewt
6
The strain is applied in the longitudinal direction of the resistor.
Assuming the gauge factor is G, the change in resistance is
L  L 
6GF (l  )  6Gm(l  ) 
R 2  2 a
 G   max 
R Ewt 2  Ewt 2 
 
 
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Stress state analysis example
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Stress state analysis example
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References
http://www.sandia.gov/mstc/mems/
http://www.ritsumei.ac.jp/se/~sugiyama/English/main.htm
http://micromachine.stanford.edu/
https://www2.eecs.berkeley.edu/Research/Areas/MEMS/
https://www.utwente.nl/ewi/mss/
http://www.ritsumei.ac.jp/se/%7Ekonishi/mems/home-e.htm
https://ocw.mit.edu/courses/
Joel Voldman, course materials for 6.777J / 2.372J Design and
fabrication of Microelectromechanical Devices, Spring 2007. MIT
S.D. Senturia, “Microsystem Design,” Kluwer Academic Publishers,
2002
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3 - Elasticity - Structure

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HỆ THỐNG VI CƠ ĐIỆN TỬ (ELT3100)

University of Engineering and Technology

Isotropic materials are those with no internal

 is the Poisson ratio. The Poisson ratio is dimensionless,

For the case of small strains, this becomes

VNU - UET MASS

The piezoresistive effect is a change in

Also called strain sensors or strain gauges.

A strain gauge is a conductor or semiconductor

Change of relative dimensions, as the resistance is related

G is called Gauge Factor of a piezoresistor. It determines the

Material Gauge factor

The very first semiconductor strain gauge used

Higher G than metal alloy strain gauges

Single crystal Polycrystal

Ohm’s law in matrix form

• The relation between changes of resistivity and the applied

Doped silicon strain sensors are also sensitive

Second technique: Wheatstone bridge

Because the longitudinal stress is the

Two failure modes

Silicon is a strong material, not a tough

Therefore the maximum strain, which is the strain experienced by the

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