Data Sheet No. PD60173 rev.

IR2183(4)(S) & (PbF)

HALF-BRIDGE DRIVER
Features
• Floating channel designed for bootstrap operation Packages
Fully operational to +600V
Tolerant to negative transient voltage 14-Lead PDIP
dV/dt immune 8-Lead PDIP IR21834
• Gate drive supply range from 10 to 20V IR2183
• Undervoltage lockout for both channels
• 3.3V and 5V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Output source/sink current capability 1.4A/1.8A
8-Lead SOIC
IR2183S
14-Lead SOIC
• Also available LEAD-FREE (PbF) IR21834S

Description IR2181/IR2183/IR2184 Feature Comparison

The IR2183(4)(S) are high voltage,

high speed power MOSFET and IGBT  !
 "!$" %!  &''
drivers with dependent high and low  "#"

side referenced output channels. Pro- *797 

&
 " 79&** 
prietary HVIC and latch immune *797:
&
CMOS technologies enable rugge- *79;

&
="
" < 
79&** 
*79;: $ >: ? < 
&
dized monolithic construction. The *79: " < 
logic input is compatible with standard
& =" 9&*@ 
*79:: $ >: ? < 
&
CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration
which operates up to 600 volts.

Typical Connection
  











 


 
  

IR2183
 IR21834













(Refer to Lead Assignment for correct pin 

configuration) This/These diagram(s) show

 

electrical connections only. Please refer to our 
Application Notes and DesignTips for proper circuit
board layout.

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IR2183(4)(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.

Symbol Definition Min. Max. Units

VB High side floating absolute voltage -0.3 625
VS High side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25
V
VLO Low side output voltage -0.3 VCC + 0.3
DT Programmable dead-time pin voltage (IR21834 only) VSS - 0.3 VCC + 0.3
VIN Logic input voltage (HIN & 
) VSS - 0.3 VSS + 10
VSS Logic ground (IR21834 only) VCC - 25 VCC + 0.3
dVS/dt Allowable offset supply voltage transient — 50 V/ns
PD Package power dissipation @ TA ≤ +25°C (8-lead PDIP) — 1.0
(8-lead SOIC) — 0.625
W
(14-lead PDIP) — 1.6
(14-lead SOIC) — 1.0
RthJA Thermal resistance, junction to ambient (8-lead PDIP) — 125
(8-lead SOIC) — 200
°C/W
(14-lead PDIP) — 75
(14-lead SOIC) — 120
TJ Junction temperature — 150
TS Storage temperature -50 150 °C
TL Lead temperature (soldering, 10 seconds) — 300

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
VB High side floating supply absolute voltage VS + 10 VS + 20
VS High side floating supply offset voltage Note 1 600
VHO High side floating output voltage VS VB
VCC Low side and logic fixed supply voltage 10 20
VLO Low side output voltage 0 VCC V
VIN Logic input voltage (HIN & 
) VSS VSS + 5
DT Programmable dead-time pin voltage (IR21834 only) VSS VCC
VSS Logic ground (IR21834 only) -5 5
TA Ambient temperature -40 125 °C
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: HIN and LIN pins are internally clamped with a 5.2V zener diode.

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 IR2183(4)(S) & (PbF)

Dynamic Electrical Characteristics

VBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified.

Symbol Definition Min. Typ. Max. Units Test Conditions

ton Turn-on propagation delay — 180 270 VS = 0V
toff Turn-off propagation delay — 220 330 VS = 0V or 600V
MT Delay matching | ton - toff | — 0 35
nsec
tr Turn-on rise time — 40 60 VS = 0V
tf Turn-off fall time — 20 35 VS = 0V
DT Deadtime: LO turn-off to HO turn-on(DTLO-HO) & 280 400 520 RDT= 0
HO turn-off to LO turn-on (DTHO-LO) 4 5 6 µsec RDT = 200k (IR21834)
MDT Deadtime matching = | DTLO-HO - DTHO-LO | — 0 50 RDT=0
nsec
— 0 600 RDT = 200k (IR21834)

Static Electrical Characteristics

VBIAS (VCC, VBS) = 15V, VSS = COM, DT= V SS and TA = 25°C unless otherwise specified. The VIL, VIH and IIN
parameters are referenced to VSS/COM and are applicable to the respective input leads: HIN and LIN. The VO, IO and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.

Symbol Definition Min. Typ. Max. Units Test Conditions

VIH Logic “1” input voltage for HIN & logic “0” for 
2.7 — — VCC = 10V to 20V
VIL Logic “0” input voltage for HIN & logic “1” for 
— — 0.8 VCC = 10V to 20V
V
VOH High level output voltage, VBIAS - VO — — 1.2 IO = 0A
VOL Low level output voltage, VO — — 0.1 IO = 0A
ILK Offset supply leakage current — — 50 VB = VS = 600V
µA
IQBS Quiescent VBS supply current 20 60 150 VIN = 0V or 5V
IQCC Quiescent VCC supply current 0.4 1.0 1.6 mA VIN = 0V or 5V
IIN+ Logic “1” input bias current — 5 20 HIN = 5V, 
= 0V
µA
IIN- Logic “0” input bias current — 1 2 HIN = 0V, 
= 5V
VCCUV+ VCC and VBS supply undervoltage positive going 8.0 8.9 9.8
VBSUV+ threshold
VCCUV- VCC and VBS supply undervoltage negative going 7.4 8.2 9.0
V
VBSUV- threshold
VCCUVH Hysteresis 0.3 0.7 —
VBSUVH
IO+ Output high short circuit pulsed current 1.4 1.9 — VO = 0V,
PW ≤ 10 µs
A
IO- Output low short circuit pulsed current 1.8 2.3 — VO = 15V,
PW ≤ 10 µs

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IR2183(4)(S) & (PbF)

Functional Block Diagrams

VB

2183
UV
DETECT
R HO
PULSE R Q
HV
FILTER
LEVEL S
SHIFTER
HIN VSS/COM VS
LEVEL
PULSE
SHIFT
GENERATOR

DT DEADTIME &
SHOOT-THROUGH
VCC
PREVENTION
UV
+5V DETECT
LO

VSS/COM
LIN LEVEL DELAY
SHIFT COM

VSS

VB

21834 UV
DETECT
R HO
R Q
PULSE
HV
FILTER
LEVEL S
VSS/COM SHIFTER
HIN LEVEL VS
PULSE
SHIFT
GENERATOR

DEADTIME &
DT SHOOT-THROUGH
VCC
PREVENTION
UV
+5V DETECT
LO

VSS/COM
LIN LEVEL DELAY
SHIFT COM

VSS

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 IR2183(4)(S) & (PbF)

Lead Definitions
Symbol Description
HIN Logic input for high side gate driver output (HO), in phase (referenced to COM for IR2183 and
VSS for IR21834)

Logic input for low side gate driver output (LO), out of phase (referenced to COM for IR2183
and VSS for IR21834)
DT Programmable dead-time lead, referenced to VSS. (IR21834 only)
VSS Logic Ground (21834 only)
VB High side floating supply
HO High side gate driver output
VS High side floating supply return
VCC Low side and logic fixed supply
LO Low side gate driver output
COM Low side return

Lead Assignments

1 HIN VB 8 1 HIN VB 8
2 LIN HO 7 2 LIN HO 7

3 COM VS 6 3 COM VS 6

4 LO VCC 5 4 LO VCC 5

8-Lead PDIP 8-Lead SOIC

IR2183 IR2183S

1 HIN 14 1 HIN 14

2 LIN VB 13 2 LIN VB 13

3 VSS HO 12 3 VSS HO 12

4 DT VS 11 4 DT VS 11

5 COM 10 5 COM 10

6 LO 9 6 LO 9

7 VCC 8 7 VCC 8

14-Lead PDIP 14-Lead SOIC

IR21834 IR21834S

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IR2183(4)(S) & (PbF)

<^ <^

  '' '

_^ _^


 7^ 7^


Figure 1. Input/Output Timing Diagram

<^ <^

  '' '

_^ _^

 7^ 7^

Figure 2. Switching Time Waveform Definitions


<^ <^


_^

  7^

  
_^

7^

`   


Figure 3. Deadtime Waveform Definitions

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 IR2183(4)(S) & (PbF)

500 500

Turn-on Propagation Delay (ns)

Turn-on Propagation Delay (ns)

400 400
M ax.

300 300
M ax. Typ.
200 200
Typ.

100 100

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (oC) Supply Voltage (V)

Figure 4A. Turn-on Propagation Delay Figure 4B. Turn-on Propagation Delay
vs. Temperature vs. Supply Voltage

600 600
Turn-off Propagation Delay (ns)

Turn-off Propagation Delay (ns)

500 500

400 M ax.
400
300 Typ.
300 M ax.
200
200 Typ.
100

100 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (oC) Supply Voltage (V)

Figure 5A. Turn-off Propagation Delay Figure 5B. Turn-off Propagation Delay
vs. Temperature vs. Supply Voltage

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 IR2183(4)(S) & (PbF)

120 120

100 100

Turn-on Rise Time (ns)

Turn-on Rise Time (ns)

80 80 M ax.

60 60 Typ.

40 M ax. 40
Typ.
20 20
0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature ( C)
o
Supply Voltage (V)

Figure 6A. Turn-on Rise Time vs. Temperature Figure 6B. Turn-on Rise Time vs. Supply Voltage

80 80
Turn-off Fall Time (ns)

Turn-off Fall Time (ns)

60 60

M ax.

40 40
M ax. Typ.

20 Typ
20

0 0
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (oC) Supply Voltage (V)

Figure 7A. Turn-off Fall Time vs. Temperature Figure 7B. Turn-off Fall Time vs. Supply Voltage

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 IR2183(4)(S) & (PbF)

1100 1100

900 900

Deaduime (ns)
Deadtime (ns)

700 700
M ax. M ax.

500 Typ.
500 Typ.

M in. M in.
300 300

100 100
-50 -25 0 25 50 75 100 125 10 12 14 16 18 20
Temperature (oC) Supply Voltage (v)

Figure 8A. Deadtime vs. Temperature Figure 8B. Deadtime vs. Supply Voltage

6
7
6 M ax. 5
Logic "1" Input Voltage (V)

5 Typ.
4
Deadtime ( ° s)

4 M in.
3 M in.
3
2
2
1 1

0 0
0 50 100 150 200 -50 -25 0 25 50 75 100 125
RDT (K° ) Temperature (oC)

Figure 8C. Deadtime vs. RDT Figure 9A. Logic "1" Input Voltage
vs. Temperature

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IR2183(4)(S) & (PbF)

6 6
5 5
Logic "1" Input Voltage (V)

Logic "0" Input Voltage (V)

4 4
3 M in. 3
2 2
M ax.
1 1
0 0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
Supply Voltage (V) Temperature ( C)
o

Figure 9B. Logic "1" Input Voltage Figure 10A. Logic "0" Input Voltage
vs. Supply Voltage vs. Temperature

6 5

5
Logic "0" Input Voltage (V)

4
High Level Output (V)

4
3
3
2 M ax.
2

1
M ax.
1

0 0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
Supply Voltage (V) Temperature ( C)
o

Figure 10B. Logic "0" Input Voltage Figure 11A. High Level Output vs. Temperature
vs. Supply Voltage

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 IR2183(4)(S) & (PbF)

5 0.5

4 0.4
High Level Output (V)

Low Level Output (V)

3 0.3

2 M ax. 0.2
M ax.
1 0.1

0 0.0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
Supply Voltage (V) Temperature (oC)

Figure 11B. High Level Output vs. Supply Voltage Figure 12A. Low Level Output vs. Temperature

0.5 500
A)

0.4
Offset Supply Leakage Current (

400
Low Level Output (V)

0.3 300

0.2 200
M ax.
0.1 100
M ax.
0.0 0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
Supply Voltage (V) Temperature (oC)

Figure 12B. Low Level Output vs. Supply Voltage Figure 13A. Offset Supply Leakage Current
vs. Temperature

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IR2183(4)(S) & (PbF)

500
A)

250
Offset Supply Leakage Current (

400

V BS Supply Current ( A)
200

300 M ax.
150

200 100 Typ.

100 M ax. 50 M in.

0 0
100 200 300 400 500 600 -50 -25 0 25 50 75 100 125
VB Boost Voltage (V) Temperature (oC)

Figure 13B. Offset Supply Leakage Current Figure 14A. VBS Supply Current
vs. VB Boost Voltage vs. Temperature

250 5
V CC Supply Current (mA)
V BS Supply Current ( A)

200 4

150 M ax. 3

100 Typ. 2 M ax.

Typ.
50 M in. 1
M in.

0 0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125

VBS Floating Supply Voltage (V) Temperature ( oC)

Figure 14B. VBS Supply Current Figure 15A. V CC Supply Current

vs. VBS Floating Supply Voltage vs. Tem perature

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 IR2183(4)(S) & (PbF)

5 120

A)
V CC Supply Current (mA)

4 100

Logic "1" Input Bias Current (

3 80

60
2
40 M ax.

1 Typ.
20
0 0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
V CC Supply Voltage (V) Temperature (oC)

Figure 15B. V CC Supply Current Figure 16A. Logic "1" Input Bias Current
vs. V CC Supply Voltage vs. Temperature

120 5
A)
A)

100
Logic "0" Input Bias Current (

4
Logic "1" Input Bias Current (

80
3
60
M ax. 2
40
M ax.
Typ. 1
20

0 0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125

Supply Voltage (V) Temperature (oC)

Figure 16B. Logic "1" Input Bias Current Figure 17A. Logic "0" Input Bias Current
vs. Supply Voltage vs. Temperature

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IR2183(4)(S) & (PbF)

5 12
A)

V CC and V BS UV Threshold (+) (V)

11
Logic "0" Input Bias Current (

4
10 M ax.
3 Typ.
9
2 M in.
8
M ax.
1 7

0 6
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125
Supply Voltage (V) Temperature (oC)

Figure 17B. Logic "0" Input Bias Current Figure 18. VCC and VBS Undervoltage Threshold (+)
vs. Supply Voltage vs. Temperature

12 5
V CC and V BS UVThreshold (-) (V)

11
Output Source Current (A)

4
10
M ax. 3
9 Typ.
Typ. 2
8
M in. M in.
7 1

6 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Temperature (oC) Temperature (oC)

Figure 19. VCC and VBS Undervoltage Threshold (-) Figure 20A. Output Source Current
vs. Temperature vs. Temperature

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 IR2183(4)(S) & (PbF)

5 5.0

Output Sink Current (A)

Output Source Current (A)

4 4.0

3
3.0 Typ.

2
Typ.
2.0
1 M in.

M in.
1.0
0
10 12 14 16 18 20 -50 -25 0 25 50 75 100 125

Supply Voltage (V) Temperature (oC)

Figure 20B. Output Source Current Figure 21A. Output Sink Current
vs. Supply Voltage vs. Temperature

5 140

120
4
Output Sink Current (A)

Temprature (oC)

100
3
80 140v
2 70v
Typ. 60 0v

1 M in. 40

0 20
10 12 14 16 18 20 1 10 100 1000
Supply Voltage (V) Frequency (KHz)

Figure 21B. Output Sink Current Figure 22. IR2183 vs. Frequency (IRFBC20),
vs. Supply Voltage Rgate=33Ω , V CC=15V

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 IR2183(4)(S) & (PbF)

140 140

120 120

Temperature (oC)
Temperature (oC)

100 100
140v
140v
80 80 70v
70v

60
0v
60 0v

40 40

20 20
1 10 100 1000 1 10 100 1000

Frequency (KHz) Frequency (KHz)

Figure 23. IR2183 vs. Frequency (IRFBC30), Figure 24. IR2183 vs. Frequency (IRFBC40),
Rgate=22Ω , V CC=15V Rgate=15Ω , V CC=15V

140
140v
140
70v
0v
120 120
Temperature (oC)
Temperature (oC)

100 100

80 80

60 60 140v
70v

40 40 0v

20 20
1 10 100 1000 1 10 100 1000

Frequency (KHz) Frequency (KHz)

Figure 25. IR2183 vs. Frequency (IRFPE50), Figure 26. IR21834 vs. Frequency (IRFBC20),
Rgate=10Ω , V CC=15V Rgate=33Ω , V CC=15V

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 IR2183(4)(S) & (PbF)

140 140

120 120

Temperature (oC)
Temperature (oC)

100 100
140v
80 80
70v

60 140v 60 0v
70v
0v
40 40

20 20
1 10 100 1000 1 10 100 1000

Frequency (KHz) Frequency (KHz)

Figure 27. IR21834 vs. Frequency (IRFBC30), Figure 28. IR21834 vs. Frequency (IRFBC40),
Rgate=22Ω , V CC=15V Rgate=15Ω , V CC=15V

140v
140 140

120 70v 120

Temperature (oC)
Temperature o(C)

100 0v 100

80 80 140v

60 60 70v
0v

40 40

20 20
1 10 100 1000 1 10 100 1000
Frequency (KHz) Frequency (KHz)

Figure 29. IR21834 vs. Frequency (IRFPE50), Figure 30. IR2183s vs. Frequency (IRFBC20),
Rgate=10Ω , V CC=15V Rgate=33Ω , V CC=15V

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IR2183(4)(S) & (PbF)

140v 70v
140 140

120 120

Temperature (oC)
140v 0v
Temperature (oC)

100 100
70v

80 0v 80

60 60

40 40

20 20
1 10 100 1000 1 10 100 1000

Frequency (KHz) Frequency (KHz)

Figure 31. IR2183s vs. Frequency (IRFBC30), Figure 32. IR2183s vs. Frequency (IRFBC40),
Rgate=22Ω , V CC=15V Rgate=15Ω , V CC=15V

140V 70V 0V
140 140

120 120
Tempreture (oC)

Temperature (oC)

100 100
80 80
60
60 140v
70v
40 0v
40
20
1 10 100 1000 20
1 10 100 1000
Frequency (KHz)
Frequency (KHz)
Figure 33. IR2183s vs. Frequency (IRFPE50), Figure 34. IR21834s vs. Frequency (IRFBC20),
Rgate=10Ω , V CC=15V Rgate=33Ω , V CC=15V

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 IR2183(4)(S) & (PbF)

140 140

120 120

Temperature (oC)
Temperature (oC)

100 100 140v

80 140v 80 70v

0v
60 70v
0v
60

40 40

20 20
1 10 100 1000 1 10 100 1000
Frequency (KHz) Frequency (KHz)
Figure 35. IR21834s vs. Frequency (IRFBC30), Fig u re 36. IR 21834s vs . Fre q u e n cy (IR FB C 40),
Rgate=22Ω , V CC=15V R gate =15 Ω , V C C =15V

140 140v 70v

0v

120
Temperature (oC)

100

80

60

40

20
1 10 100 1000
Frequency (KHz)

Fig u re 37. IR 21834s vs . Fre q u e n cy (IR FP E50),

R gate =10 Ω , V C C =15V

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IR2183(4)(S) & (PbF)
Case outlines

01-6014
8-Lead PDIP 01-3003 01 (MS-001AB)

INCHES MILLIMETERS
D B DIM
MIN MAX MIN MAX
A 5 FOOTPRINT A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8X 0.72 [.028]
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E E .1497 .1574 3.80 4.00
0.25 [.010] A
1 2 3 4 6.46 [.255] e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
L .016 .050 0.40 1.27
6X e 3X 1.27 [.050]
8X 1.78 [.070] y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
A1 8X L 8X c
8X b
7
0.25 [.010] C A B

NOTES: 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA.
8-Lead SOIC
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
01-6027
01-0021 11 (MS-012AA)

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 IR2183(4)(S) & (PbF)

01-6010
14-Lead PDIP 01-3002 03 (MS-001AC)

01-6019
14-Lead SOIC (narrow body) 01-3063 00 (MS-012AB)

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IR2183(4)(S) & (PbF)

LEADFREE PART MARKING INFORMATION

Part number IRxxxxxx

Date code YWW? IR logo

Pin 1 ?XXXX
Identifier
Lot Code
? MARKING CODE (Prod mode - 4 digit SPN code)
P Lead Free Released
Non-Lead Free
Released
Assembly site code
Per SCOP 200-002

ORDER INFORMATION

Basic Part (Non-Lead Free) Leadfree Part

8-Lead PDIP IR2183 order IR2183 8-Lead PDIP IR2183 order IR2183PbF
8-Lead SOIC IR2183S order IR2183S 8-Lead SOIC IR2183S order IR2183SPbF
14-Lead PDIP IR21834 order IR21834 14-Lead PDIP IR21834 order IR21834PbF
14-Lead SOIC IR21834 order IR21834S 14-Lead SOIC IR21834 order IR21834SPbF

Thisproduct has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web Site http://www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
10/15/2004

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