Microelectronics

BJT Amplifiers – Biasing

2018/11/1

Jieh-Tsorng Wu

National Chiao-Tung University

Department of Electronics Engineering
 Outline
1. Voltage Amplifier Model
2. Large-Signal and Small-Signal Analysis
3. Biasing of a Transistor
4. BJT Biasing Techniques
5. Sensitivity of Biasing
6. pnp BJT Biasing

7. BJT Amplifiers - Biasing 2 Microelectronics; Jieh-Tsorng Wu

 Electronic Amplifier

𝑉𝑉1 (𝑡𝑡) 𝑉𝑉2 (𝑡𝑡)

 The microphone converts sound wave into voltage signal 𝑉𝑉1 (𝑡𝑡).
 The amplifier enlarge 𝑉𝑉1 (𝑡𝑡) with a voltage gain 𝐴𝐴𝑣𝑣 = 10, i.e., 𝑉𝑉2 𝑡𝑡 = 10 × 𝑉𝑉1 (𝑡𝑡).
 The speaker converts voltage signal 𝑉𝑉2 (𝑡𝑡) into sound.
 The microphone and the speaker are one-port networks, which can be modeled
using Thevenin or Norton equivalent circuits.
 The amplifier is a two-port network.

7. BJT Amplifiers - Biasing 3 Microelectronics; Jieh-Tsorng Wu

 Thevenin and Norton Circuit Models
i i i

Linear rt
v vt v in rn v
Network

i
Thevenin Circuit Model Norton Circuit Model

r=
t rn= r
vt
=vt in=
× r in
r
 For the Thevenin circuit, 𝑣𝑣𝑡𝑡 is the open-circuit voltage at the terminals, and 𝑟𝑟𝑡𝑡 is the
input resistance at the terminals when the independent sources are turned off.
 For the Norton circuit, 𝑖𝑖𝑛𝑛 is the short-circuit current through the terminals, and 𝑟𝑟𝑛𝑛 is
the input resistance at the terminals when the independent sources are turned off.

7. BJT Amplifiers - Biasing 4 Microelectronics; Jieh-Tsorng Wu

 The g-Parameter Two-Port Network

i1 i2 i1 g22 i2

Linear
v1 v2 v1 g11 g12i2 g21v1 v2
Network

i1 i2

 i1   g11 g12  v1  i1 1

v  =  g =
g 22   i2 
g11 ≡ =
Open-Circuit Input Conductance
 2   21 v1 i =0
2
Rin

i1
g12 ≡ =
Short-Circuit Reverse Current Gain
=i1 g11v1 + g12i2 i2 v1 = 0

=
v2 g 21v1 + g 22i2 = v
g 21 ≡ 2 =
Open-Circuit Forward Voltage Gain Av
v1 i2 = 0

v
=g 22 ≡ 2 =
Short-Circuit Output Resistance Rout
i2 v =0
1

7. BJT Amplifiers - Biasing 5 Microelectronics; Jieh-Tsorng Wu

 Linear Model for a Voltage Amplifier

i1 Rout i2

v1 Rin A vv 1 v2

v1
= =
Rin Input Resistance
i1 i2 = 0

v2
= =
Av Voltage Gain
v1 i2 = 0

v2
= =
Rout Output Resistance
i2 v1 = 0

7. BJT Amplifiers - Biasing 6 Microelectronics; Jieh-Tsorng Wu

 Input and Output Impedances

vx vx
Rin = Rout =
ix ix

7. BJT Amplifiers - Biasing 7 Microelectronics; Jieh-Tsorng Wu

 Voltage Amplifier

𝑣𝑣𝑖𝑖𝑖𝑖 (𝑡𝑡) 𝑣𝑣𝑜𝑜𝑜𝑜𝑜𝑜 (𝑡𝑡)

Rm Rout Rin
vin = × vm
Rm + Rin
vm RL
vin Rin Avvin vout
8Ω RL
vout = × Av vin
Rout + RL
 In an ideal voltage amplifier, 𝑅𝑅𝑖𝑖𝑖𝑖 = ∞ and 𝑅𝑅𝑜𝑜𝑜𝑜𝑜𝑜 = 0. Then, 𝑣𝑣𝑖𝑖𝑖𝑖 = 𝑣𝑣𝑚𝑚 and 𝑣𝑣𝑜𝑜𝑜𝑜𝑜𝑜 =
𝐴𝐴𝑣𝑣 𝑣𝑣𝑖𝑖𝑖𝑖 .
7. BJT Amplifiers - Biasing 8 Microelectronics; Jieh-Tsorng Wu
 Impedance at Base

vx β βVT
Rin= = rπ= =
ix gm IC

 When calculating input/output impedance, small-signal analysis is assumed.

7. BJT Amplifiers - Biasing 9 Microelectronics; Jieh-Tsorng Wu

 Impedance at Collector

VA
Rout= ro=
IC

 With Early effect, the impedance seen at the collector is equal to the intrinsic output
impedance of the transistor (if emitter is grounded).

7. BJT Amplifiers - Biasing 10 Microelectronics; Jieh-Tsorng Wu

 Impedance at Emitter

Neglect the Early effect.

vπ = −vx
vπ vx 1 
ix = − − g m vπ = + g m vx = + g m  vx
rπ rπ  rπ 
v 1 1 1
=
Rout = x = Rout ≈ if β = g m rπ  1
ix g + 1 g + g m gm
m
rπ m
β
7. BJT Amplifiers - Biasing 11 Microelectronics; Jieh-Tsorng Wu
 Three Master Rules of Transistor Impedances

 Rule # 1: looking into the base, the impedance is 𝑟𝑟𝜋𝜋 if emitter is (ac) grounded.
 Rule # 2: looking into the collector, the impedance is 𝑟𝑟𝑜𝑜 if emitter is (ac) grounded.
 Rule # 3: looking into the emitter, the impedance is 1⁄𝑔𝑔𝑚𝑚 if base is (ac) grounded
and Early effect is neglected.

7. BJT Amplifiers - Biasing 12 Microelectronics; Jieh-Tsorng Wu

 Voltage Transfer Characteristic (VTC) of a BJT Amplifier

𝑉𝑉𝑜𝑜 , 𝑉𝑉
Vce = VCC − I c × RC
𝐼𝐼𝑏𝑏

𝑉𝑉𝑖𝑖𝑖𝑖 , 𝑉𝑉

𝐼𝐼𝑏𝑏

𝑉𝑉𝑖𝑖𝑖𝑖 , 𝑉𝑉

7. BJT Amplifiers - Biasing 13 Microelectronics; Jieh-Tsorng Wu

 Biasing of BJT

V= VBE + vbe
RC
in

IC+ic

Q1 VO+vo
I= I C + ic
vbe c

VBE

 Transistors and circuits must be biased because (1) transistors must operate in the
active mode, (2) their small-signal parameters depend on the bias conditions.

7. BJT Amplifiers - Biasing 14 Microelectronics; Jieh-Tsorng Wu

 DC Analysis vs. Small-Signal Analysis

1. DC analysis is performed to determine operating point and obtain small-signal

parameters.
2. In small-signal analysis, DC sources are set to zero and small-signal model is
used.

7. BJT Amplifiers - Biasing 15 Microelectronics; Jieh-Tsorng Wu

 Notation Simplification

 Hereafter, the battery that supplies power to the circuit is replaced by a horizontal
bar labeled 𝑉𝑉𝐶𝐶𝐶𝐶 , and input signal is simplified as one node called 𝑉𝑉𝑖𝑖𝑖𝑖 .

7. BJT Amplifiers - Biasing 16 Microelectronics; Jieh-Tsorng Wu

 Example of Bad Biasing

= ×10−16 A Vin 0  20 mV
I S 6=
∆VBE VT −15
=∆I C I=
S e 1.29 × 1 0 A
∆Vout = RC × ∆I C
kΩ × 1.29 × 10−15 A 1.29 × 10−12 V
= 1=

 The microphone is connected to the amplifier in an attempt to amplify the small

output signal of the microphone.
 Unfortunately, there’s no DC bias current running thru the transistor to set the
transconductance.

7. BJT Amplifiers - Biasing 17 Microelectronics; Jieh-Tsorng Wu

 Another Example of Bad Biasing

VBE = VCC

 The base of the amplifier is connected to 𝑉𝑉𝐶𝐶𝐶𝐶 , trying to establish a DC bias.

Unfortunately, the output signal produced by the microphone is shorted to the
power supply, i.e., 𝑣𝑣𝑖𝑖𝑖𝑖 = 0.
 𝑉𝑉𝐵𝐵𝐵𝐵 = 2.5 V!

7. BJT Amplifiers - Biasing 18 Microelectronics; Jieh-Tsorng Wu

 Base-Resistor Biasing
Find I B using iteration
V − VBE IB × β  I C I S VBE 
→ I B = CC VBE =VT ln  B
I = = e VT

RB IS  β β 
Simplified I B calculation
VCC − VBE
=→ IB = VBE VBE ,on ≈ 700 ∼ 800 mV
RB
VCC − VBE ,on
=I C β=
× IB β ×
RB
VCC − VBE ,on
VCE = VCC − RC I C =VCC − RC × β ×
RB
Check → VCE > VBE or VCE > VCE , sat where VCE , sat ≈ 200 mV

 Bias point, 𝐼𝐼𝐶𝐶 and 𝑉𝑉𝐶𝐶𝐶𝐶 , is sensitive to β variations.

7. BJT Amplifiers - Biasing 19 Microelectronics; Jieh-Tsorng Wu

 Example: Base-Resistor Biasing
=I C I=
S eVBE VT
IC β × I B
I S = 10−17 A VT = 26 mV
β = 100

VCC − VBE 2.5 − 0.8

V= 800 mV → =
IB = = 17 μA
100 kΩ
BE
RB
IB × β VCC − VBE 2.5 − 0.852
→ V
= VT ln = 852 mV → =
IB = = 16.5 μA
100 kΩ
BE
IS RB
=I B 16.5 μA=I C β=
× I B 100 ×16.5 μA =
1.65 mA
VCE =VCC − RC I C =2.5 − 1 kΩ ×1.65 mA = 0.85 V
Check →
= VCE 0.85 V  VBE ⇒ VCB  0 ⇒ Q1 is in active mode
7. BJT Amplifiers - Biasing 20 Microelectronics; Jieh-Tsorng Wu
 Resistive-Divider Biasing

Neglect I B
R2
=VX = × VCC VBE
R1 + R2
 R2 VCC 
=I C I=
Se
VBE VT
I S exp  × 
 1
R + R2 V T 

 Using resistor divider to set 𝑉𝑉𝐵𝐵𝐵𝐵 , it is possible to produce an 𝐼𝐼𝐶𝐶 that is relatively
independent of β if base current is small.

7. BJT Amplifiers - Biasing 21 Microelectronics; Jieh-Tsorng Wu

 Example: Resistive-Divider Biasing
=I C I=
S eVBE VT
IC β × I B
I S = 10−17 A VT = 26 mV
β = 100

R2 8
VX = × VCC = × 2.5 0.8 V
R1 + R2 17 + 8
=I C I=
S eVBE VT
10 −17 800 26
= e 231 μA
VCC 2.5 IC
=
I R1 , R2 = = 0.1 mA=100 μA  I= = 2.31 μA
R1 + R2 17 kΩ + 8 kΩ
B
β
V=
CE VCC − RC × I C =
2.5 − 5 kΩ × 0.231 mA=1.345 V > VBE ⇒ VCB > 0

7. BJT Amplifiers - Biasing 22 Microelectronics; Jieh-Tsorng Wu

 Accounting for Base Current

R2
VThev = VCC
R1 + R2
RThev = R1  R2
R1 R2
=
R1 + R2

VThev − VBE IB × β
I=
B VBE= VT ln → Iteration → I B IC = β × I B
RThev IS
 With proper ratio of 𝑅𝑅1 and 𝑅𝑅2 , 𝐼𝐼𝐶𝐶 can be insensitive to β; however, its exponential
dependence on resistor deviations makes it less useful.

7. BJT Amplifiers - Biasing 23 Microelectronics; Jieh-Tsorng Wu

 Example: Resistive-Divider Biasing
=I C I=
S eVBE VT
IC β × I B
I S = 10−17 A VT = 26 mV
β = 100

R2 80 170 × 80
=
=
VThev =× VCC × 2.5 0.8 V =
RThev R=  R = 54.4 kΩ
R1 + R2 170 + 80 170 + 80
1 2

VThev − VBE 0.8 − 0.75

=
VBE 750 mV →=
IB = = 0.919 μA
RThev 54.4 kΩ
β IB VThev − VBE
→
= VBE VT ln = 776 mV=
→ IB = 0.441 μA
IS RThev
→ V=
BE I B 0.79 μA →  → V=
757 mV →= BE =
76 =
6 mV I B 0.63 μA I C 63 μA

7. BJT Amplifiers - Biasing 24 Microelectronics; Jieh-Tsorng Wu

 Emitter-Degeneration Biasing

I R1 , R2  I B ⇒ Neglect I B contribution
R2 R2
VX = VCC VP =VX − VBE = VCC − VBE
R1 + R2 R1 + R2
VP VX − VBE 1  R2 
=
IE =
=  V − VBE 
RE  R1 + R2
CC
RE RE 
β
β  1 ⇒ I= IE ≈ IE
C
β +1

1  R2  IC
IC =  V − VBE  V = V ln → Iteration → I C VBE
+
CC BE T
RE  1
R R2  IS

 The presence of 𝑅𝑅𝐸𝐸 helps to absorb the error in 𝑉𝑉𝑋𝑋 so 𝑉𝑉𝐵𝐵𝐵𝐵 stays relatively constant.
 This bias technique is less sensitive to β and 𝑉𝑉𝐵𝐵𝐵𝐵 variations.

7. BJT Amplifiers - Biasing 25 Microelectronics; Jieh-Tsorng Wu

 Example: Emitter-Degeneration Biasing
R2
=VX = VCC 900 mV
R1 + R2
VBE =800 mV VP =VX − VBE =100 mV
VP IC
I E ≈ I= = 1 mA I= = 10 µ A
C
RE
B
β
IC
=→ VBE VT ln = = 796 mV VP 104 mV
IS
I E ≈ I C = 1.04 mA
IC = I S eVBE VT
IC = β × I B
VY =VCC − I C RC =2.5 − 1 mA ×1 kΩ =1.5 V
−17
I S = 5 ×10 A VT = 26 mV
VCE = VY − VP = 1.5 − 0.1= 1.4 V ⇒ VCE > VBE
β = 100
VCC
I R1 , R2 = 100 µ A  I B
=
R1 + R2

7. BJT Amplifiers - Biasing 26 Microelectronics; Jieh-Tsorng Wu

 Emitter-Degeneration Biasing

 The presence of 𝑅𝑅𝐸𝐸 helps to absorb the error in 𝑉𝑉𝑋𝑋 so 𝑉𝑉𝐵𝐵𝐵𝐵 stays relatively constant.
 This bias technique is less sensitive to β (𝐼𝐼1 ≫ 𝐼𝐼𝐵𝐵 ) and 𝑉𝑉𝐵𝐵𝐵𝐵 variations.

7. BJT Amplifiers - Biasing 27 Microelectronics; Jieh-Tsorng Wu

 Emitter-Degeneration Biasing Design Procedure

1. Choose an 𝐼𝐼𝐶𝐶 to provide the necessary small-signal parameters, 𝑔𝑔𝑚𝑚 , 𝑟𝑟𝜋𝜋 , etc.
2. Considering the variations of 𝑅𝑅1 , 𝑅𝑅2 , and 𝑉𝑉𝐵𝐵𝐵𝐵 , choose a value for 𝑉𝑉𝑅𝑅𝑅𝑅 ≈ 𝐼𝐼𝐶𝐶 𝑅𝑅𝐸𝐸 .
3. Calculate 𝑉𝑉𝑋𝑋 = 𝑉𝑉𝐵𝐵𝐵𝐵 + 𝐼𝐼𝐶𝐶 𝑅𝑅𝐸𝐸 with 𝑉𝑉𝐵𝐵𝐵𝐵 = 𝑉𝑉𝑇𝑇 ln 𝐼𝐼𝐶𝐶 ⁄𝐼𝐼𝑆𝑆 .
4. Select 𝑅𝑅1 and 𝑅𝑅2 to provide 𝑉𝑉𝑋𝑋 and establish 𝐼𝐼1 ≫ 𝐼𝐼𝐵𝐵 .
5. The value of 𝑅𝑅𝐶𝐶 is determined by the small-signal gain requirements. The value of
𝑅𝑅𝐶𝐶 is bounded by a maximum the places Q1 and the edge of saturation.

7. BJT Amplifiers - Biasing 28 Microelectronics; Jieh-Tsorng Wu

 Example: Bias Design
VCC = 2.5 V Want g m  1 52 
IC IC
gm = ⇒ I C = g m × VT = 0.5 mA I B = = 5 µA
VT β
IC
=
VBE V=
T ln 778 mV
IS
VRE
VRE = RE I C  200 mV ⇒ RE = = 400 Ω
IC
I C = I S eVBE VT VX = VRE + VBE = 978 mV
IC = β × I B R2
VCC =
VX =
978 mV
VCC
50 µ A
≈ I1  10 I B =
R1 + R2 R1 + R2
I S = 5 ×10−17 A
= kΩ R2 19.55 kΩ
⇒ R1 30.45 =
VT = 26 mV
VCC − RC I C > VX ⇒ RC I C < VCC − Vx =
1.522 V
β = 100
⇒ RC < 3.044 kΩ

7. BJT Amplifiers - Biasing 29 Microelectronics; Jieh-Tsorng Wu

 Self-Biasing Technique

IC  I B ⇒ VY =VCC − RC ( I C + I B ) ≈ VCC − RC I C
IC RB
IB = ⇒ VY = RB I B + VBE = × I C + VBE
β β
VCC − VBE
⇒ IC =
RB
RC +
β

VCC − VBE IC
IC = VBE = VT ln → Iteration → I C VBE
R IS
RC + B
β
 This bias technique utilizes the collector voltage to provide the necessary 𝑉𝑉𝑋𝑋 and 𝐼𝐼𝐵𝐵 .
 One important characteristic of this technique is that collector has a higher potential
than the base, thus guaranteeing active operation of the transistor.

7. BJT Amplifiers - Biasing 30 Microelectronics; Jieh-Tsorng Wu

 Example: Self Biasing
VCC = 2.5 V
=RC 1=
kΩ RB 10 kΩ
VBE = 800 mV
VCC − VBE 2.5 − 0.8
=IC = = 1.545 mA
R 10 k
RC + B 1 k+
β 100
I C = I S eVBE VT IC
→ VBE = VT ln = 807.6 mV
IS
IC = β × I B
2.5 − 0.8076
I S = 5 ×10 −17
A=IC = 1.539 mA
1 k+0.1 k
VT = 26 mV IC
RB I B = RB × = 154 mV VY = RB I B + VBE = 0.962 V
β = 100 β

 Quick estimate: V𝑌𝑌 ≈ 𝑉𝑉𝐵𝐵𝐵𝐵 and 𝐼𝐼𝐶𝐶 ≈ 𝑉𝑉𝐶𝐶𝐶𝐶 − 𝑉𝑉𝐵𝐵𝐵𝐵 ⁄𝑅𝑅𝐶𝐶

7. BJT Amplifiers - Biasing 31 Microelectronics; Jieh-Tsorng Wu

 Self Biasing Design Guidelines
VCC − VBE
IC =
R
RC + B
β
RB
Want RC  VCC − VBE  ∆VBE
β
1. Choose I C
RB
2. Make  0.1RC
β
VCC − VBE I
=
3. Calculate I C = VBE VT ln C
1.1RC IS
VCC − VBE
=4. RC = RB 0.1× β RC
1.1I C

 Provides insensitivity to β and insensitivity to variation in 𝑉𝑉𝐵𝐵𝐵𝐵 .

7. BJT Amplifiers - Biasing 32 Microelectronics; Jieh-Tsorng Wu

 Summary of Biasing Techniques

7. BJT Amplifiers - Biasing 33 Microelectronics; Jieh-Tsorng Wu

 VX Sensitivity due to IB Variation
R2
VTH = VCC ×
R1 +R2
R1 R2
=
RTH R=
1  R2
R1 +R2
VRH = RTH × I B
VRE = RE × I C
=I C I=
Se
VBE VT
β × IB
VX = VTH − VRH = VBE + VRE
VX = VTH − VRH = VTH − RTH I B
∂VX
⇒ =− RTH ⇒ ∂VX =− RTH × ∂I B
∂I B
∂VX − RTH × ∂I B − RTH × ∂I B VRH ∂I 1 ∂I
⇒ = = = − × B = − × B
VX VX VTH − VRH VTH − VRH I B VTH VRH − 1 I B
To reduce VX sensitivity to I B , want VTH  VRH
R2 RR VCC
⇒ VTH  RTH I B ⇒ × VCC  1 2 × I B ⇒  IB
R1 + R2 R1 + R2 R1
7. BJT Amplifiers - Biasing 34 Microelectronics; Jieh-Tsorng Wu
 VX Sensitivity due to VCC Variation
R2
VTH = VCC ×
R1 +R2
R1 R2
=
RTH R=
1  R2
R1 +R2
VRH = RTH × I B
VRE = RE × I C
=I C I=
Se
VBE VT
β × IB
VX = VTH − VRH = VBE + VRE
R
Let VTH  VRH ⇒ VX =VTH = 2 × VCC
R1 + R2
∂VX R2 R2
⇒ = ⇒=
∂VX × ∂VCC
∂VCC R1 + R2 R1 + R2
∂VX 1 R2 ∂VX ∂VCC
=
⇒ × × ∂VCC=
⇒
VX VX R1 + R2 VX VCC

7. BJT Amplifiers - Biasing 35 Microelectronics; Jieh-Tsorng Wu

 IC Sensitivity due to VX and VBE Variation

IC β
gm = rπ
VT gm
vπ vx − vπ vx
+ g m=
vπ ⇒ =
vπ
rπ RE 1 1 
1+  +  gm
 rπ RE 
vx ic gm
ic = g m vπ = g m ⋅ ⇒ =
1 1  vx 1 
1+  +  gm 1 +  + g m  RE
 rπ RE   rπ 
7. BJT Amplifiers - Biasing 36 Microelectronics; Jieh-Tsorng Wu
 IC Sensitivity due to VX and VBE Variation

ic gm IC β
= gm = rπ
vx 1  VT gm
1 +  + g m  RE
 rπ 
1 i gm IC VRE
β g m rπ  1 ⇒ g m  ⇒ c= Note: g m R= × R=
vx 1 + g m RE
E E
rπ VT VT
g m × vx
g m RE  1 ⇒ ic =
1
g m RE  1 ⇒ ic = × vx
RE
7. BJT Amplifiers - Biasing 37 Microelectronics; Jieh-Tsorng Wu
 Sensitivity of Self Biasing

IC IC  1
VCC = VBE + I B RB + ( I C + I B ) RC = VT ln + RB + 1 +  I C RC
IS β  β
 1 I R
To reduce I C sensitivity to RB , want 1 +  I C RC  C RB ⇒ RC  B
 β β β
vx r i 1 + g m rπ 1+ β 1 R +r R 1
ix = + vx × π × g m ⇒ g x = x = = rx = = B π ≈ B +
RB + rπ RB + rπ vx RB + rπ RB + rπ gx 1+ β β gm
vcc ix 1 1 RB + rπ RB 1 1
ix = ⇒ = = Want RC  ≈ + ⇒ RC 
RC + rx vcc RC + rx R + RB + rπ 1+ β β gm gm
1+ β
C

7. BJT Amplifiers - Biasing 38 Microelectronics; Jieh-Tsorng Wu

 PNP Biasing Techniques

 Same principles that apply to NPN biasing also apply to PNP biasing with only
polarity modifications.

7. BJT Amplifiers - Biasing 39 Microelectronics; Jieh-Tsorng Wu

 PNP Base-Resistor Biasing
IB × β
=I C I=
Se
VEB VT
β I=
B VEB VT ln
IS
VCC − VEB I ×β
=
1. Find IB : IB = VEB VT ln B → Iteration
RB IS
VCC − VEB ,on
Simplified I B : I B = VEB = VEB ,on ≈ 700 ∼ 800 mV
RB
VCC − VEB
2. I C β=
= × IB β ×
RB
VCC − VEB
3. VEC =VCC − RC I C =VCC − RC × β ×
RB
4. Want VEC > VEB
VCC − VEB
⇒ VCC − RC I C > VEB ⇒ RC <
IC
VCC − VEB RB
⇒ RC ,max
= =
β IB β

7. BJT Amplifiers - Biasing 40 Microelectronics; Jieh-Tsorng Wu

 PNP Resistive-Divider Biasing

R1
VThev = VCC
R1 + R2
RThev = R1  R2
R1 R2
=
R1 + R2

IB × β
=I C I=
Se β I=
B
VEB VT
VEB VT ln
IS
VCC − VEB − VThev I ×β
=
1. Find IB : IB = VEB VT ln B → Iteration
RThev IS
2. I C = β × I B
R2  R2 VCC 
If I B  I1 ⇒ VEB= VCC I C= I S eVEB VT= I S exp  
R1 + R2  1
R + R2 VT 

7. BJT Amplifiers - Biasing 41 Microelectronics; Jieh-Tsorng Wu

 PNP Emitter-Degeneration Biasing
=I C I=
S eVEB VT
β IB
+
IC
𝑉𝑉𝑅𝑅𝑅 VEB = VT ln
− IS
R
I1  I B ⇒ VR 2 = 2 × VCC
R1 + R2
V=
RE VR 2 − VEB
VRE VR 2 − VEB 1  R2 
I C ≈=
IE = =  × V − VEB 
RE  R1 + R2
CC
RE RE 
1. Assume I B  I1 I E = IC + I B ≈ IC
VRE 1  R2  IC
2. Find I C : I C ≈ I E = =  × V − VEB  V =
V ln
RE RE  R1 + R2
CC EB T
 IS
R1 R VCC
3. Find RC ,max : VB =VC ⇒ VCC =RC ,max I C ⇒ RC ,max = 1
R1 + R2 R1 + R2 I C

7. BJT Amplifiers - Biasing 42 Microelectronics; Jieh-Tsorng Wu

 PNP Self Biasing

=I C I=
S eVEB VT
β IB
IC
VEB = VT ln
IS

1. Assume I C  I B
IC
⇒ VCC =VEB + RB I B + RC ( I C + I B ) ≈ VEB + RB I B + RC I C IB =
β
VCC − VEB IC
2. Find=
IC : IC = VEB VT ln → Iteration
R IS
RC + B
β
VX > VY ⇒ Q1 is always in the active mode.
7. BJT Amplifiers - Biasing 43 Microelectronics; Jieh-Tsorng Wu