Solid State: Synopsis

JEE-MAIN-SR-CHEM-VOL-I SOLID STATE
SOLID STATE
SYNOPSIS * The existance of a substance in more than one
solid modification is called polymorphism.
Ø In solid state atoms, ions or molecules are
Ø Annealing: An amorphous substance, on
arranged orderly in a three dimensional manner
heating at a certain temperature, may attain
due to strong binding forces.
crystalline nature while on cooling regains its
Ø Due to this arrangement, solids acquire rigidity
amorphous nature. This phenomenon is called
and definite geometric shapes or crystalline
annealing. Ex : Glass on keeping in semi-solid
structures.
state for a long time or on cooling, it melts very
Characteristic properties of the solids slowly, it becomes opaque due to development
i) They have definite mass, volume and shape. of crystals in it.
ii) Intermolecular distances are short Ø Isotropy: Amorphous solids on the other hand
iii) Intermolecular forces are strong are isotropic in nature. It is because there is no
iv) Their constituent particles (atoms, molecules long range order in them and arrangment is
or ions) have fixed positions and can only irregular along all the directions. Therfore, value
oscillate about their mean positions. of any physical property would same along any
v) They are incompressible and rigid direction.
Distinction between crystalline and amorphous solids
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SOLID STATE JEE-MAIN-SR-CHEM-VOL-I
Ø Anisotropy: Crystalline solids are anisotropic Ø Classification of Crystalline Solids:
in nature, that is, some of their physical A crystal is classified as ionic, covalent, metallic
properties like electrical resistance or refractive and molecular according to the nature of the
index show different values when measured building units, chemical bonding and the
along different directions in the same crystals. intermolecular forces in the crystal.
This arises from different arrangement of The characteristics of various types of solids are
particles in different directions. given in the table.
Different types of Solids
48 NARAYANAGROUP
W.E-1.Give the order of the metallic bond strengths
in Mg , Ca and Al
Sol: Bond strength is highest in Al, due to the
presence of three valence electrons. In Mg and
Ca, two valence electrons each are present. But
due to large size, bond is weaker in Ca than in
Mg.
Order of metallic bond strength: Ca<Mg<Al
Covalent or Network Solids: Crystalline

solids of non-metals result from the formation
of covalent bonds between adjacent atoms
throughout the crystal. They are also called giant
molecules. Covalent bonds are strong and
directional in nature, therefore atoms are held
very strongly at their positions. Such solids are
very hard and brittle. They have extremely high
melting points.They are insulators and do not Coordination Number of Crystals: The
conduct electricity. Diamond and silicon carbide coordination number of an atom or ion in solid
are typical examples of such solids. Graphite is is the number of nearest neighbours for that atom
soft and a conductor of electricity. Graphite has or ion
layer like structure. It is good solid lubricant. Eg :1) In NaCl crystal, coordination number
of Na + ion as well as Cl − ion is 6.
Ø Applications of amorphous solids: 2) Coordination number of C in diamond is 4
Amorphous solids are used in domestic 3) In SiO2 , coordination of Si is 4 while that
constructions or appliances like photo voltaic
of oxygen atom is 2
cells where the sun light is transformed into
4) In metal lattices the coordination number of
electricity.
a metal atom is usually 8 or 12.
Additional Information: X-Ray study of crystal structure-

Bragg’s Equation-X-Ray Difraction
Radiusratio :- studies X–Ray study of crystal
It is the ratio of the smaller ion radius to that of Ø X – ray diffraction studies of crystal clearly
reveal the internal structure of crystals.
 rsmall  Ø The exact pattern of arrangement of crystal
the larger ion i.e.
 ρ =  components, size and shape of the unit cell.
 rl arg e  Ø Electromagnetic radiation propagate in the form
of waves in all directions . In the propagation
of waves along a direction, the maximum
In many cases rsmall is the cation radius and rl arg e displacement perpendicular to motion of the
is that of anion. The shape of the crystals wave is known as amplitude of the wave.
depends on coordination number. Ø For constructive interference resultant amplitude
is 2 E0 ( E0 = Amplitude )
Ø For destructive interference resultant amplitude
is Zero
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Ø The waves, if present in the same phase they Ø The angles are substituted for 'θ ' in Bragg’s
undergo constructive interference on the other equation and the values of ‘d’ are calculated.
hand if the waves are not in phase, they undergo Ex : - For NaCl crystal ‘d’ values are in the ratio
destructive interference.
1 2
Bragg’s Equation: W.L. Bragg and W.H. of 1: : = 1: 0.707 :1.154 . From this it is
2 3
Bragg worked out and gave a mathematical
confirmed that the crystal has F.C.C. structure.
relation to determine inter atomic distance from
X – ray diffraction pattern. This relation is called Note : - Bragg’s method to be used, large single
the Bragg’s equation crystals are neccessary. The planes of the crystal
must be fully developed and easily identified.
nλ = 2d sin θ ; n = order of reflection;
Ø Debye - Scherrer Method is used to determine
λ = Wave length of x-rays
the crystal structures.
d = interplanar distance, θ = angle of reflection
Ø Space Lattice (or) Crystal Lattice: A space
lattice is an array of points showing how
molecules, atoms or ions are arranged at
different sites in three dimensional space.
Ø Lattice Point: The point that represents a
molecule, an atom or an ion in a space lattice is
called Lattice point.
Unit Cell: The smallest portion of the crystal

lattice which can be used as repetitive unit in
three dimensional manner to get entire crystal
lattice is called unit cell. Unit cells are broadly
divided into two categories, primitive and
centred unit cells.
Ø As ‘n’ value increases θ value increases
Ø (a) Primitive unit cells :When constituent
Ø X – rays of definite wave length obtained from particles are present only on the corner positions
X − ray tube, passes through a slit and falls on of a unit cell,it is called as primitive unit cell.
a known face of the crystal. The position of the Ø (b) Centred unit cells : When a unit cell
crystal can be read on a scale. contains one or more constituent particles
Ø The intensity of the diffracted X – ray from the present at positions other than corners in
crystal is measured on a photographic plate or addition to those at corners, it is called Centred
an ionization chamber. The ionization chamber unit cell. Centred unit cells are of three types:
contain CH 3 Br vapours. (i) Body-centred unit cells : Such a unit cell
Ø The extent of ionization in the vapour is shown contains one constituent particle (atom,
by the electrometer reading. As the intensity of molecule or ion) at its body-centre besides the
the diffracted X – rays increases, the degree of ones that are at its corners.
ionization also increases (ii) Face-centred unit cells : Such a unit
Ø By changing the angle of incidence the extent cell contains one constituent particle present at
of ionization at different angles is recorded in the centre of each face, besides the ones that are
the electrometer. at its corners.
Ø The Crests of the graph, taken from electrometer (iii) End-centred unit cells : In such a unit
reflect maximum diffraction. The angles cell, one constituent particles is present at the
corresponding to the crests are noted from the centre of any two opposite faces besides the ones
graphs. present at its corners.
50 NARAYANAGROUP
Ø From fundamental laws of crystallography there
are 14 basic arrangements known as Bravais
Lattices.
Ø The following are characteristics of a crystal
lattice
a) Each point in a lattice is called lattice point
or lattice site.
b) Each point in a crystal lattice represents one
constituent particle which may be an atom, a
molecule or an ion.
c) Lattice points are joined by straight lines to
bring out the geometry of the lattice.
Ø These 14 Bravais lattices are grouped into seven
crystal system based on unit cell symmetry .
These seven crystal systems are
Ø The three cubic lattices : all sides of same

length, angles between faces all 900.
Ø The two tetragonal : one side different in
length to the other, two angles between faces
all 900.
Ø The four orthorhombic lattices : unequal
sides, angles between faces all 900.
Ø The two monoclinic lattices : unequal sides,
two faces have angles different to 900.
Ø Hexagonal lattice : one side different in
length to the other two, the marked angles on
two faces are 600.
Ø Rhombohedral lattice : All sides of equal
length, angles on two faces are less than 900. Ø (c) Crystal systems: A unit cell is
Triclinic lattice : Unequal sides a, b, c are characterised by :
unequal angles with not equal to 900. (i) its dimensions along the three edges, a, b and
c. These edges may or may not be mutually
Bravais Lattices: Bravais showed that there perpendicular.
are 14 different possible kinds of three
(ii) angles between the edges, α (between b
dimensional lattices.
Ø The geometric shape of the crystal lattice must and c ) β (between a and c ) and γ (between
be same as that of solid crystal itself. a and b ). Thus, a unit cell is characterised by
Ex : If unit lattice is having cubical structure
six parameters, a, b, c,α , β and γ.
the crystal is also a cube.
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Ø There are 230 crystal forms possible. These Ø Match box has orthorhombic geometry
forms may be classified into 32 classes on the Ø Ice may give hexagonal or trigonal crystals
basis of their symmetry. Ø Quartz may give hexagonal or trigonal crystals
Ø On the basis of inter facial angles and axes
crystal systems are 7 types. Calculation of the contribution of lattice
The crystal structures depends on the set of points per unit cell of substance.
crystallographic parameters
Ø A lattice point at the corner of a unit cell is shared

by 8 vicinal unit cells.
Ø A face centered point is shared by two adjacent
unit cells.
Ø A edge centered point is shared by four adjacent
unit cells
Ø A body centered lattice point belongs completely
to a specific unit cell.
Close packed structures

Packing of Solids and Voids
Ø In solids constituent particles are arranged as
spheres in close structure.
Ø In close packed structure, maximum space is
occupied by constituent particles and leave
minimum vacant space
Ø When the spheres are closely packed the
different crystal systems are generated.
A) Close packing in one dimension :
Close paking of spheres in one dimension

Co-ordination number is 2.
52 NARAYANAGROUP
B)Close packing in two dimensions : generated is the simple cubic lattice, and its unit
cell is the primitive cubic unit cell.
(ii) Three dimensional close packing from two
dimensional hexagonal close packed layers.
Three dimensional close packed structure can
be generated by placing layers one over the other.
(a) Placing second layer over the first
layer: Let us take a two dimensional hexagonal
close packed layer ‘A’ and place a similar layer
above it such that the spheres of the second layer
Square close packing - coordination no.4 are placed in the depressions of the first layer.
Since the spheres of the two layers are alligned
differently. This is AB AB type packing.
hexagonal close packing coordination no.6 The spheres of the second layer ‘B’ are not
covered all the triangular voids of the first layer
C) Close packing in three dimensions :
‘A’. This gives rise to different arrangements.
Wherever a sphere of the second layer is above
the void of the first layer (or vice versa) a
tetrahedral void is formed. These voids are
called tetrahedral voids because a tetrahedron
is formed when the centres of these four spheres
are joined.
At other places, the triangular voids in the
second layer are bove the triangular voids in the
first layer, and the triangular shapes of these do
not overlap. One of them has the apex of the
(i) Three dimensional close packing from two triangle pointing upwards and the other
dimensional square close-packed layers: downwards. Such voids are surrounded by six
While placing the second square close-packed spheres and are called octahedral voids.
layer above the first we follow the same rule Let the number of close packed spheres be N,
that was followed when one row was placed then :
adjacent to the other. The second layer is placed The number of octahedral voids generated =
over the first layer such that the spheres of the N
upper layer are exactly above those of the first The number of tetrahedral voids generated =
layer. In this arrangement spheres of both the 2N
layers are perfectly aligned horizontally as well (b) Placing third layer over the second
as vertically. Similarly, we may place more layer: When third layer is placed over the
layers one above the other. If the arrangement second, there are two possibilities.
of spheres in the first layer is called ‘A’ type, all
(i) Covering Tetrahedral voids : Tetrahedral
the layers have the same arrangement. Thus this
voids of the second layer may be covered by the
lattice has AAA.... type pattern. The lattice thus
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spheres of the third layer. In this case, the Octahedral hole : It is the vacant space
spheres of the third layer are exactly aligned with between a group of three spheres in a layer and
those of the first layer. Thus, the pattern of another set of three spheres of a next layer. These
spheres is repeated in alternate layers. This six spheres surrounding the hole, lie at the
pattern is often written as ABAB.... pattern. This vertices of a regular octahedron.
structure is called hexagonal close packed (hcp) Ø In CCP or FCC lattice, one octahedral void is at
structure. This sort of arrangement of atoms is the body centre of the cube and one octahedral
found in many metals like magnesium and zinc. void at the centre of each of the 12 edges. Hence
(ii) Covering octahedral voids : The third total number of octahedral voids
layer may be placed above the second layer in a 1
= 1 + 12 × = 1 + 3 = 4.
manner such that its spheres cover the octahedral 4
voids. When placed in this manner, the spheres Ø If there are ‘X’ atoms in a close packed structure,
of the third layer are not aligned with those of there are ‘X’ octahedral holes present.
either the first or the second layer. This Ø Thus number of tetrahedral holes is double the
arrangement is called “c” type. Only when number of octahedral holes. The size of these
fourth layer is placed, its spheres are alligned holes depends on the size of the spheres
with those of the first layer. This pattern of layers producing them.
is often written as ABCABC..... This structure Ø Octahedral holes are larger than tetrahedral
is called cubic close packed (ccp) or face-centred holes.
cubic (fcc) structure. Metals such as copper and r
Ø Radius ratio of octahedral void r
void
= 0.414 .
silver crystallise in this structure. sphere
both these types of close packing are highly Formula of a Compound and Number
efficient and 74% space in the crystal is filled. of Voids Filled
In either of them, each sphere is in contact with
twelve spheres . Thus, the coordination W.E-2 A compound is formed by two elements X
number is 12 in either of these two structures. and Y. Atoms of the element Y(as anions) make
ccp and those of the element X(as cations)
Interstitial Voids : The empty spaces occupy all the octahedral voids. What is the
between the three dimensional layers are known formula of the compound?
as holes or voids. The holes are also refered as Sol: The ccp lattice is formed by the element Y. The
interstices. There are three types of holes number of octahedral voids generated would be
possible. equal to the number of atoms of Y present in it.
Since all the octahedral voids are occupied by
Tetrahedral holes : A hole formed by three
the atoms of X, their number would also be equal
spheres in contact with each other of a layer. to that of the element Y. Thus, the atoms of
The hole is capped by a sphere from an upper elements X and Y are present in equal numbers
layer.(Planar triangle with vertex down wards) or 1:1 ratio. Therefore, the formula of the
Ø A hole formed by three spheres of a layer in compound is XY.
contact with each other and also with a sphere
of a next lower layer (planar triangles with vertex W.E-3 Atoms of element B from hcp lattice and
upward) those of the element A occupy 2/3rd of
Ø Note : In the above types of holes the four tetrahedral voids. What is the formula of the
spheres are arranged at the vertices of a regular compound formed by the elements A and B?
tetrahedron. Sol: The number of tetrahedral voids formed is equal
Ø If ‘X’ spheres form a solid there are a total of to twice the number of atoms of element B and
‘2X’ tetrahedral holes. only 2/3rd of these are occupied by the atoms
of element A. Hence the ratio of the number of
rvoid atoms of A and B is 2x(2/3):1 or 4:3 and the
Ø Radius ratio of tetrahedral void, r = 0.225 .
sphere
formula of the compound is A4 B3 .
54 NARAYANAGROUP
Locating Tetrahedral and Octahedral 1. Efficiency of packing in simple cubic unit
Voids: Generally close packed structures have cell : A simple cube is having 1 sphere per unit
both tetrahedral and octahedral voids. Let us cell. Let consider the edge of a simple cubic
take ccp (or fcc) structure and locate these voids
in it. unit as a , then the volume of unit cell is a 3 ,
(a) Locating Tetrahedral Voids: Let us we known from the earlier discussion that in
consider a unit cell of ccp or fcc lattice.The unit simple cube a = 2 rs where ' rs ' is the radius of
cell is divided into eight small cubes. sphere.
Each small cube has atoms at alternate corners. Percentage efficienty of simple cubic unit cell
In all, each small cube has 4 atoms. When joined = volume of one sphere / volume of unit cell x
to each other, they make a regular tetrahedron. 100
Thus, there is one tetrahedral void in each small (or)
cube and eight tetrahedral voids in total. Each
4 4
π × ( rs ) π × ( rs )
3 3
of the eight small cubes have one void in one
unit cell of ccp structure. We know that ccp 3 × 100 = 3 × 100
( 2 × rs )
3
structure has 4 atoms per unit cell. Thus, the a3
number of tetrahedral voids is twice the number
of atoms. 4
π
(b) Locating Octahedral Voids: Let us again (or) 3 × 100 = 52.3
consider a unit cell of ccp or fcc lattice. This 8
unit cell has one octahedral void at the body Thus, the volume occupied by sphere in simple
centre of the cube. Besides the body centre, there cubic unit cell is 52.3% and void volume is 47.7
is one octahedral void at the centre of each of per cent.
the 12 edges. Each edge of the cube is shared
between four adjacent unit cells. 1/4th of each 2. Efficiency of packing in body-centred unit
void belongs to a particular unit cell. cell : Consider a body-centred unit cell with
Thus in cubic close packed structure Octahedral edge length ' a ' and with radius of sphere ' rs ' .
void at the body-centre of the cube=1. As body centred unit cell is having two spheres
12 octahedral voids located at each edge and per unit cell and a 3 is the volume of unit cell
1 by taking edge length ' a ' .
shared between four unit cells = 12 × =3
4
∴ Total number of octahedral voids = 4
We know that in ccp structure, each unit cell
has 4 atoms. Thus, the number of octahedral
voids is equal to this number.
Packing Fraction (Density of packing)

Efficiency (or packing fraction or density of
packing) of a unit cell is defined in terms of the
percentage volume occupied by spheres in that
unit cell, out of total available volume. It is
calculated by the following formula.
No. of spheres / unit cell x
From ∆ABC , AC = 2a and from ∆ADF ,
% efficiency = volume occupied by each sphere
/ total volume of unit cell x 100 AF = 3a and we know
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Body diagonal of cubic unit cell is 3a
4
Thus, AF = 4 rs = 3a or a = 3
rs
percentage efficienty of body-centered unit cell

= Volume of two sphere / Volume of cube x 100
4
2 × π ( rs )
3
(or) 3 From ∆ABC , ,

× 100
a3 AC = 2a = 4rs , (or)
4 4
2 × π ( rs )
3
a= rs = 2 2rs
3 × 100 = 68.05 2
3
(or)  4  We know that there are four spheres per unit
 rs 
 3  cell in a face-centred unit cell and thus per cent
efficiency of face centred unit cell.
Thus, the volume occupied by spheres in body- = Volume of four spheres / Volume of cube x
centred unit cell is 68.05% and void volume is 100
31.95%.
4
4 × π ( rs )
3
Ø Length of face diagonal - 2a
= 3 × 100
Ø Length of body diagonal - 3a a3
3. Efficiency of packing in face-centred unit 4
4 × π ( rs )
3
cell : Consider a face-centred unit cell with edge 3

= × 100 = 74.06
( )
3
3
length ' a ' and volume a . Radius of sphere is 2 2rs
taken as rs . It is clear from the figure that touch Thus, the volume occupied by spheres in face-
with the two other atoms diagonally arranged. centred unit cell (ccp arrangement) is 74.06%
and void volume is 25.94%.
56 NARAYANAGROUP
Ø For fcc lattice of an ionic crystal of NaCl type Point defects in Crystals:
edgelength, a = 2 ( rc + ra ) Ø Stoichiometric compounds are called
Ø For bcc lattice of an ionic crystal edgelength Daltonoides, non-stoichiometric compounds are
called Berthollides.
3a = 2 ( rc + ra ) Ø Point defects are the irregularities or deviations
from ideal arrangement around a point or an
Calculation of density of unit cell : atom in a crystalline substance
Knowing the unit cell dimensions, the density Ø Properties like density, entropy and heat capacity
of a crystalline substance can be calculated from are influenced by crystal defects to a lesser
the formula extent.
ZM ZM Ø The defects in the crystal, influence the
ρ= 3 or
H= ρ = density
N0a N0V Where properties like mechanical strength, electrical
conductivity and chemical activity of the solids
Z = No. of atoms (or) formula units per unit cell
to a greater extent.
M = Molecular weight of the lattice particle
Ø Thermodynamically all solids possess a
(Atomic wt / formula wt )
tendency to acquire defects because defects
a = unit cell length. v = volume result in disorder and hence increase the entropy
of the system
Defects in Solids: ØAt 0 Kelvin, a
perfectly crystalline substance is said to have Ø Electron micro scope is used to know the defects
ideal packing which means that all the lattice in a solid crystal
points are occupied by particles of the solid and Ø The defects in the crystals can be divided in to
the crystal is perfect. different kinds
Ø As the temperature is increased, thermal motions
are induced which create imperfections in the Types of Crystal defects
solid. Ø Intrinsic defects : These are seen in pure
Ø Any deviation from the perfectly crystalline crystals
arrangement in a solid is known as a defect. Ø Extrinsic defects : These are due to the
Ø Broadly speaking the defects are of two types, impurities in the solids
namely, point defects and line defects. Ø Point defects : These occur at the lattice points
Ø Point defects are the irregularities or deviations or sites in the crystals
from ideal arrangement around a point or an Ø Extended defects: These are present in one
atom in a crystalline substance, whereas the line
or more dimensions.
defects are irregularities or deviations from ideal
arrangement in some rows of lattice points. In stoichiometric compounds two types of
Types of defects: defects are observed
1) Stoichiometric defects
2) Non-stoichiometric defects Stoichiometric defects: They are also called
intrinsic or thermodynamic defects. These are
1) Stoichiometric defects: These are the
of two types. ‘Vacancy defect’ and ‘interstitial
defects in which stoichometry of the ionic
defect’. When some of the lattice sites are
compound remains the same after the defect.
vacant, the crystal is having vacancy defect.
The ratio of cations and anions is maintained When some constituent particles occupy an
even after the defect. interstitial site, the crystal is having interstitial
Types of stoichiometric defects defect. They are shown by non-ionic solids.
1) Schottky defect 2) Frenkel defect Ø Ionic solids show.
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a) Schottky defect c) Impurity defect : If molten NaCl containing
(Schottky-Wagner defects) small quantity of SrCl2 is crystalised, some of
Ø This defect arises due to a vacancy at cation sites the Na+ ions are replaced by Sr+2. Each Sr+2
and equal number of vacancies at anion sites replaces two Na+ ions. It occupies the site of
Ø In ionic crystals electrical neutrality is to be one Na+ ion and the other site remains vacant.
maintained Other example is the solid solution of CdCl2 and
Conditions for this defect AgCl.
(a) High co-ordination numbers and Non Stoichiometric point defects :
(b) Where the positive and negative ions are of They include
+
r Metal excess defect (Due to anion
similar size i.e.,≅1
r− vacancy) : It is due to absence of anion from
Ex : NaCl, CsCl,KCl,AgBr lattice site leaving a hole which is occupied by
electron to maintain electrical neutrality
Consequences of this defect:
A+ B- A+ B-
Ø Density of the crystal decreases.
B- A+ e- A+
Ø Stability decreases and the crystal is more prone
to collapsing with increased number of such F - Centres : Holes occupied by electrons are
defects. called F - Centres (Colour centres). The greater
Ø The crystal begins to conduct electricity to some the number of F - centres the greater is the
extent because ions can now move into the intensity of colour of solid and solids are
vacancies caused by the defect. paramagnetic in nature due to F - centres
Ø Schottky defect is found in highly ionic Eg : NaCl is yellow, KCl is violet, LiCl is pink
compounds Crystals showing schottky defect also show this
Ø Large number of vacancies in the lattice lower defect.
the density Metal excess defect due to the presence of
b) Frenkel defect: This type of defect arises extra cations at interstitial sites :ZnO on
due to a vacancy at a cation site. Actually, The heating loses oxygen and turns yellow. Now
cation moves to another position between two there is excess of Zinc in the crystal. The excess
layers (intersticial position) and it is surrounded Zn +2 ions move to interstitial sites and the
by a greater number of anions electrons to neighbouring interstitial sites.
Conditions Favouring Frenkel Defect: 1
Ø Frenkel defect is favoured by a large difference ZnO 
heating
→ Zn 2+ + O2 + 2e −
2
in sizes between cation and anion
Metal deficiency defect due to cation
Ø Compounds having ions of different sizes i.e
vacancy: It is due to absence of a metal ion
r+ from its lattice site and charge is balanced by
is low since positive ions are smaller than
r− ion having higher positive charge.
negative ions, generally the positive ions are A+ B- O B-
found in interstitial positions B- A++ B- A+
Ø In these compounds the coordination number is Transition metals exhibits this defect. A typical
low(usually 4 or 6) example of this type is FeO which is mostly
Ex : ZnS, AgBr, AgI, AgCl.
found with a composition of Fe0.95O . It may
Ø Some ionic crystals have both the Schottky as
well as Frenkel defects Ex : AgBr actually range from Fe0.93O to Fe0.96O . In
Consequences of Frenkel Defect: crystals of FeO some Fe +2 cations are missing
Ø Density of the crystal is not altered and the loss of positive charge is made up by
Ø Stability decreases
the presence of required number of Fe +3 ions.
58 NARAYANAGROUP
Ø The mechanism of electrical conductivity may
Electrical and Magnetic properties be given in terms of
Ø Properties of solids depending on the nature of a) Vacancy Mechanism
bonding or cohesive forces present in them b) Interstitial Mechanism and
Ø In ionic solids cohesive forces are due to the c) Interstices Mechanism
lattice energy and they originated from Ø The Magnitude of electrical conductivity
Coulombic forces of attractions between the two strongly depends on the number of electrons
ions available to participate in the conduction
Ø In metals electrons are essentially mobile and process.
so the properties of metals can be explained in Ø In Metals the conductivity depends on the
terms of electron bands formed by molecular number of valence electrons present per atom.
orbitals. Ø when a large number of atoms unite their wave
Ø Crystals can possess various structures, these functions interact.
structures can be studied by X-ray diffraction Ø This results in a large number of molecular
methods. orbitals or energy levels, some Bonding and
some antibonding.
Ø Pure crystalline solids are also imperfect
Ø These energy levels are closely spaced energy
arrangements. These defects in solids cause
levels and are known as bands.
changes in the properties of the solids.
Ø The number of energy levels is equal to the
Ø Crystalline solids exhibit a wide range of number of Atomic orbitals interacting.
properties namely, Electrical, Mechanical, Ø One half of these resulting orbitals have lowered
Magnetic and other properties. energy levels and are known as bonding orbitals.
Ø The physical properties of solid, its structure and They are of similar energies and form a
its chemical composition are all closely continuous band of orbitals.
interrelated. Ø The other half of resultant orbitals have raised
energy levels are known as Antibonding energy
Electrical Properties :Based on electrical levels or orbitals.
conductivity, solids can be broadly classified Ø At all real temperatures the band has a large
into three types number of half filled energy levels. Electrons
Ø They are Metals, Semi-conductors and can flow readily through these bands only when
Insulators or Non-conductors the band is incompletely filled with electrons
Ø Metals are conductors and have conductivity of or when electronic band(filled energy levels) is
the order of 104 to 107 ohm–1m–1 very close to vacant molecular orbitals.
Ø Insulators have very low conductivity of the Ø At laboratory temperatures the conductivity of
order of 10–20 to 10–10 ohm–1m–1 the metals is nearly independent of impurities
Ø The solids whose conductivity lies between and the lattice defects.
those of Metallic conductors and insulators are Ø At low temperatures the mobility due to
called Semi-conductors. The order of vibrations in the lattice is quite negligible and
conductivity of semi - conductors is 10–6 to 104 as a result the conductivity becomes infinitely
ohm–1m–1 large.
Ø The conductivity of metals generally decrease
Ø The electrical conductivity that is observed is
with an increase in temperature. This is probably
usually related to defects in the crystal.
due to increased vibrations in the lattice points
Ø In such defective crystal the migration of ions the resistance to the flow of electrons increases.
or charge imperfections(in case of Ionic Ø The impurities in the metal and the
conductivity) or the motion of electrons and imperfections in the lattice also contribute to the
shifting of holes(increase of electronic conductivity.
conductivity) relate the conductivities.
NARAYANAGROUP 59
Ø Measurement of the resistance of the metal as Ø When IIIA (or) 13th group ;element like B (or)
resistance ratio ρ300 K ρ 4.2 K explain the purity Al or Ga or In is added to Si, the substitution
of the metal. of few Si atoms by group IIIA takes place
Ø The conductivity of semi conductors varies Electron - deficit impurties: IIIA group
completely in the opposite way to that of the element has only 3 valence electrons. One more
metals. electron is required, it is left as a vacant place
Ø Semi conductors conductivities increases with on the atom. This is called as electron vacancy
increase in temperature. This is due to the fact or a hole.
that the electrons from the valence band jump Ø This electron vacancy in the crystal structure
to the conduction band. migrates from one atom to another. This is
Ø Pure semi conductors which exhibit this responsible for electrical conductivity of Si.
property are known as intrinsic semi conductors. Ø ‘Si’ doped with IIIA (or) 13th group element is
Ø The temperature zone where the conductivity called p – type semiconductor
depends on the thermal electrons and the holes Applications: n – type and p – type semi
in the lattice of the semi conductors is known conductors both are used in electronic devices
as intrinsic region. Example : Diode, pnp or npn type
Ø At low temperature the conductivity is mainly semiconductors are used in transistors.
determined by the concentrations of the electron Ø These transistors are used to detect (or) amplify
donors and the acceptors. This region is known radio or audio signals
as extrinsic region. Ø In the conversion of radiant energy into electrical
energy solar cell (p – n type ) is used
Doping: Addition of B ( IIIAGroup ) (or ) Ø Many solid state semiconductors are prepared
P (or ) As (VA Group ) element to alter the by combining IIIA or 13th group elements with
VA or 15th group elements and IIB or 12th group
conductivity of Ge ( or ) Si is called as doping. elements with VIA or 16th group
Ø In this type of conductors bond is not pure
Ø Pure Si (or ) Ge are intrinsic semiconductors covalent. Nature of the bond depends on
electronegativities of two elements.
Ø In doping, group IIIA (13 group element )
Ø Transition metal oxides shows wide variation
element behaves as electron acceptor and group in this electrical properties.
VA (15group elements ) element behaves as Ø Metal sulphides of transition elements also
exhibits wide variation in their electrical
donor. properties.
Electron - rich impurties: When VA (or) Magnetic Properties: Every substance has
th
15 group element is added to Si , the crystal some magnetic properties associated with it.
lattice does not change, but few Si atoms are Each electron in an atom behaves like a tiny
replaced by group VA (or) 15th group elements, magnet. Its magnetic moment originates from
it forms covalent bonds with Si the fifth two types of motions (i) its spin around its own
electron is delocalised, therefore Si becomes axis. Electron being a charged particle and
undergoing these motions can be considered as
electrical conductor.
a small loop of curent which possesses a
Ø Silicon doped with VA (or) 15th group element
magnetic moment. Thus, each electron has a
is known as ‘n’ type semi conductor ( n =
permanent spin and an orbital magnetic moment
negatively charged electrons are responsible for associated with it. Magnitude of this magnetic
conductivity) moment is very small and is measured in the
Ø In doping, VA (or) IIIA group element is called
as dopant unit called Bohr magneton µ B . It is equal to
9.27 × 10−24 Am 2 .
60 NARAYANAGROUP
(d) Anti Ferromagnetism: It is due to
compensatory alignment of moments. The net
moment is Zero. The alignment of magnetic
moments in these substances is
Ex : MnO2, V2O3, NiO etc.

(e) Ferrimagnetism :It is due to the unequal
number of alignment of moments in parallel and
The substances can be classified into five types antiparallel directions. It results in the net
depending on their response to an applied moment.
magnetic field.
(a) Diamagnetic Materials : The substances
which are weakly repelled by magnetic field Fe3O4 and Ferrites like MgFe2O4, CuFe2O4,
examples NaCl, KCl, TiO2 ZnO, H2O Benzene ZnFe2O4, NiFe2O4 , etc.
etc. B <<< H Ø All the magnetically ordered solids transforms
Alignment of magnetic moments in to the paramagnetic state at elevated
diamagnetic substances temperatures due to the randomization of spins
Ex : V2O3 changes to paramagnetic at 150 K
and NiO at 523 K
The substance also lose ferrimagnetism on
heating and become paramagnetic
(b) Paramagnetic Materials:The substances
which are attracted by magnetic field due to the Bonding in metallic solids : Any theory
presence unpaired electrons on atoms, ions or which is proposed to explain bonding in metals
molecules. must be capable of explaining the following.
They lose their magnetic property when the Ø Bonding between atoms of the same element
applied field is removed and (i.e identical atoms) between atoms of
Ex : O2, Cu++, Fe+2, Fe+3, Cr+3, Na, Ti2O3, widely differing metals and bonding in. alloys.
VO2 , NO etc B > H Ø Should not involve directional bonding
Ø The properties of metals in solutions and in
(c) Ferromagnetic Materials:The substances liquid states etc.
which are strongly attaracted by magnetic field. Ø The mobility of electrons.
These substances contain domains of
(a) Electron Sea model: It was initially
magnetization. All of them are oriented in the
proposed by Drude and refined by Lorentz. It
same direction. They retain their magnetism
is known as Drude – Lorentz theory.
even after withdrawal of applied field.
Ø According to this theory, The force that binds a
Ex : Fe, Co, Ni, CrO 2, Gadalonium metal ion to the mobile electrons within its
etc. B >>>> H sphere of influence is known as metallic bond.
Ø Fe, Co, Ni, are the only three elements which Ø The formation of metallic bond involves
show ferromagnetism at room temperature. Ø A metal lattice comprises of rigid spheres of
The alignment of magnetic moments in these metal ions
substances is Ø Each metal atom contributes its valence
electrons to the sea
Ø These electrons move freely in the lattice free
spaces i.e. interstices
NARAYANAGROUP 61
Ø Cohesive forces result from electrostatic Ø The covalent bond involves resonance between
attractions between the positive metal ions and a number of structures having one electron and
the electron cloud. electron pair bonds.
Ø It explains electrial conductivity and metallic Ø Resonance occurs due to the possibility of
lustre insufficient valence electrons for the formation
Defects: Failed to explain quantitative of electron pair bonds with each atom of
calculations for the lattice energies of ionic the metal.
compounds. Resonance not only involves covalent bonds but
also ionic linkages.
(b) Valence bond theory of metals:It was
Defects:
proposed by Linus Pauling. This theory is also
Ø does not explain the conduction of heat
referred as Resonance theory. According to this
Ø Metallic lustre
theory,
Ø Retention of the metallic properties in either the
Ø The metallic bond is essentially a polar or a non
liquid state or in the solution.
polar covalent bond.
dimensional hexagonal close packing. .
62 NARAYANAGROUP
Dielectric properties: A dielectric is a Ø In normal spinel structure, oxide ions from ccp,
substance in which an electric field gives rise divalent metal ions occupy 1/8th of the
to net flow of electric charge. tetrahedral holes and trivalent metal ions occupy
Ø Under the influence of applied field, dipoles are 1/2 of the octahedral holes.
developed in these susbstances.
Ø These dipoles align in two different ways C.U.Q
a) in such a way that there is a net dipolemoment
(non - compensatory way) 1. The constituent particles of a solid have
b) in such a way that there is no net 1) Translatory motion only
dipolemoment (compensatory way) 2) Rotatory motion only
Ø The crystals in which there is a net 3) Vibratory motion only
dipolemoment when subjected to a stress, 4) All the above types of motion
produce electricity. It is called piezoelectricity 2. Most crystals show good cleavage because
or pressure electricity. their atoms, ions or molecules are
Ø In some piezoelectric solids, dipoles are 1) weakly bonded together
spontaneously aligned in a particular direction, 2) strongly bonded together
even in the absence of electric field. They are 3) spherically symmetrical
called ‘ferroelectric substances’. 4) arranged in planes
eg : Barium titanate (BaTiO 3), sodium 3. A crystalline solid
potassium tartarate, potassium hydrogen 1) changes abruptly from solid to liquid
phosphate (KH2PO4) etc. 2) has no definite melting point
In some crystals, the dipoles align in opposite 3) undergoes deformation of its geometry easily
directions, then there is no net dipolement. They 4) has an irregular 3-dimensional arrangement
are called ‘antiferroelectric susbstances’ 4. Which of the following exists as covalent
eg : lead zirconate (PbZrO3) crystals in the solid state?
If electricity is produced on heating the crystal 1) Sulphur 2) Phosphorous
then it is called pyroelectricity. 3) Iodine 4) Silicon
Ø Applications : Piezoelectric crystals are used 5. In graphite, electrons are
in microphones, ultrasonic generators, sonar 1) localised on each carbon atom
detectors, transducers etc. 2) spread out between the sheets
3) localised on every third carbon atom
Number of Schottky Defects in a 4) present in antibonding orbital
Crystal 6. A tetrahedral void in a crystal implies that
n = Ne − E /2 kt 1) shape of the void is tetrahedral
k = Boltzmann’s constant, 2) molecules forming the void are tetrahedral
T = Kelvin temperature in shape
E = energy required to create defect 3) the void is surrounded tetrahedrally by four
N = Number of ions present spheres
4) the void is surrounded by six spheres
n = ( NN i ) e − E /2 kt
1/2
Ø 7. In a face centred unit cell, the number of
nearest neighbours
N i = number of interstitial spaces
1) 8 2) 12 3) 6 4) 14
8. Increase in temperature of the crystalline
Spinel Structure: Spinels are oxides with compound results in
two types of metal ions, one is divalent and the 1) increase in coordination number.
other is trivalent. 2) decrease in coordination number
For example : MgAl2O4 3) decomposition of the compound
4) none of these
NARAYANAGROUP 63
9. F-centres in an ionic crystal are 6. The limiting radius ratio for tetrahedral
1) lattice sites containing electrons shape is
2) interstitial sites containing electrons 1) 0 to 0.155 2) 0.115 - 0.225
3) lattice sites that are vacant 3) 0.225 - 0.414 4) 0.414 - 0.732
4) intertitial sites containing cations 7. In case of a cubic system, the number of types
10. Which one of the following is a two of space lattices are
dimensional covalent solid? 1) 3 2) 7 3) 14 4) 12
1) Graphite 2) Quartz 8. The number of space lattices possible for the
3) Carborundum 4) Pure germanium
11. Diamond is hard because crystallographic dimensions α ≠ β ≠ γ
1) all the four valence electrons are bounded to 1) 1 2) 2 3) 3 4) 4
carbon atoms by covalent bonds 9. Which of the following may have tetragonal
2) it is a giant molecule
3) it is made up of carbon atoms 1) K 4 [ Fe(CN )6 ] 2) ice
4) it cannot be burnt 3) K 2Cr2O7 4) Diamond
12. The fraction of the total volume occupied by
the atoms present in a simple cube is 10. How many kinds of space lattices are possible
in a crystal?
π π π π
1) 2) 3) 4) 1) 23 2) 7 3) 30 4) 14
4 6 3 2 4 2 11. A match box exhibits :
1) cubic geometry
C.U.Q - KEY 2) monoclinic geometry
1) 3 2) 4 3) 3 4) 4 5) 2 6) 3 7) 3 3) orthorhombic geometry
8) 2 9) 1 10) 1 11) 1 12) 2 4) tetragonal geometry
12. In Bragg’s equation for diffraction of X-rays
LEVEL-I (C.W) ‘n’ represents
1) The number of mole
1. The existance of a substance in more than 2) Quantum number
one solid modification is known as 3) The order of refraction
1) Isomorphism 2) Polymorp hism 4)Avogadro’s number
3) Neomorphism 4) Crystallomorphism 13. The ratio of ‘d’ values in NaCl crystal is
2. Ionic solids are characterised by
1) 0.707 : 1 : 1.154 2) 1 : 0.707 : 1.154
1) Good conductivity in solid state
2) High vapour pressure 3) 1 : 1.154 : 0.707 4) 0.707 : 1.154 : 1
3) Low melting point 14. In a face centred cubic lattice the no.of
4) Solubility in polar solvents nearest neibhours for a given lattice point is
3. Which of the following is not a crystalline 1) 6 2) 4 3) 8 4) 12
solid? 15. How many unit cells are present in a cube-
1) KCl 2) CsCl shaped ideal crystal of NaCl of mass 1.00 g?
3) Glass 4) Rhombic sulphur 1) 2.57 × 1021 unit cells
4. Silica in amorphous form is used in
2) 5.14 × 1021 unit cells
1) photovolataic cell
2) conductivity cell 3) 1.28 × 1021 unit cells
3) standard hydrogen electrode 4) 1.71 × 1021 unit cells
4) glass electrode 16. Which of the following describes hexagonal
5. Glass is close packed arrangement of spheres.
1) Supercooled liquid 2) Crystalline solid 1)ABC ABA....... 2) ABC ABC ......
3) Liquid crystal 4) None of these 3) ABA B ..... 4) ABA ABB ......
64 NARAYANAGROUP
17. The arrangement of the first two layers, one 28. Which of the following metal oxides is anti-
above the other, in hcp and ccp arrangement ferromagnetic in nature?
is 1) V2O3 2) Ni
1) Exactly same in both cases
2) Partly same and partly different 3) Fe3O4 4) Mg ( Fe2O4 )
3) Different from each other 29. Which substance will conduct the current in
4) Nothing definite the solid state
18. In which of the following arrangements a 1) Diamond 2) Graphite
metal could have least density 3) Iodine 4) Sodium chloride
1) BCC 2) CCP 30. Which of the following is ferromagnetic ?
3) HCP 4) Simple cubic 1) Ni 2) Co 3) CrO2 4) All
19. In a closest packed lattice, the number of
31. (A) : Glass possess sharp melting point.
octahedral sites as compared to tetrahedral
(R) : Glass is a pseudo solid
ones will be
1) Both A and R are true and R is the correct
1) Equal 2) Half
explanation of A
3) Double 4) None of these
2) Both A and R are true and R is not the correct
20. The number of octahedral sites per sphere
explanation of A
in fcc structure is
3) A is true but R is false
1) 1 2) 2 3) 4 4) 8
4) A is false but R is true
21. Germanium or silicon becomes extrinsic
32. The angle corresponding to maximum
semi-conductor due to
diffraction of x-rays on solid crystal is
1) Schottky defect 2) Chemicals
determined by electrometre reading in
3) Frenkel defect 4) Both 1 and 2
1) Bragg’s experiment 2) Powder method
22. Which defect causes decrease in the density
3) Debye- Hull method
of crystal?
4) Max Von Laue experiment
1) Frenkel 2) Schottky
33. AB is an ionic solid. If the ratio of ionic radii
3) Interstitial4) Intrinsic
23. In a crystal, pair of ions are missing from of A+ and B − is 0.52. What is the co-
normal sites. This is an example of ordination number of B − ?
1) extended defect 2) Interstitial defect 1) 2 2) 3 3) 6 4) 8
3) Frenkel defect 4) Schottky defect 34. (A) : Thermodynamically all solids possess a
24. Which of the following has both Schottky and tendency to acquire defects
Frenkel defects. (R) : During defects the entropy of the system
1) AgBr 2) ZnO 3) NaCl 4) KCl increases in solids
25. Which of the following is a ferromagnetic 1) Both A and R are true and R is the correct
compound. explanation of A
1) Fe2O3 2) Fe3O4 3) Cr2O3 4) CrO2 2) Both A and R are true and R is not correct
26. Which type of semiconductor is obtained on explanation of A
mixing the arsenic into the silicon? 3) A is true but R is false
1) n-type 2) p-type 4) A is false but R is true
3) Internal 4) both (1) and (2) 35. At zero kelvin, most of the ionic crystals
27. The electrical conductivity of possess
semiconductors 1) Frenkel defect 2) Schottky defect
1) Increases with temperature 3) Metal excess defect 4) No defect
2) Decreases with temperature 36. An example for metallic conductor and
3) Remains constant on heating semiconductor is
4) All the above 1) TiO 2) FeO 3) V2O3 4) NiO
NARAYANAGROUP 65
37. The general formula of ferrites is
LEVEL-I (H.W)
MFe2O4 .Where ‘M’ would not be
1) Mg 2) Cu 3) Al 4) Zn 1. Which of the following is amorphous in
38. Which of the following will produce p-type nature ?
semiconductor?
1) Quartz 2) CuSO4 .5 H 2O
1) Silicon doped with phosphorus
2) Germanium doped with arsenic 3) Dry ice 4) fused silica glass
3) Gallium doped with arsenic 2. Which of the following does not give any
4) Germanium doped with gallium diffraction bands with X-rays ?
1) BaSO4 2) Graphite 3) Diamond 4) Plastic
LEVEL-I (C.W) - KEY 3. Covalent solid among the following is
1) 2 2) 4 3) 3 4) 1 5) 1 6) 3 7) 1 1) solid Ar 2) MgO 3) Fe 4) BN
4. Which of the following is not a correct
8) 1 9) 1 10) 4 11) 3 12) 3 13) 2 14) 4 statement ?
15) 1 16) 3 17) 1 18) 4 19) 2 20) 1 21) 2 1) Any material can be made amorphous by
22) 2 23) 4 24) 1 25) 4 26) 1 27) 1 28) 1 quenching it’s melt (or) freezing it’s vapour
2) The melt of an amorphous solid when slowly
29) 2 30) 4 31) 4 32) 1 33) 3 34) 1 35) 4
cooled becomes crystalline
36) 3 37) 3 38) 4 3) Glass melts over a range of temperatures.
4) Quartz has irregular chains of SiO4 units.
LEVEL-I (C.W) - HINTS 5. Which is not related to amorphous solids
1 Different crystal structures of same solid 1) do not have sharp melting points
substance are polymorphs 2) rigid and hard
3) Not bound by plane surfaces
2. Ionic substances are soluble in polar solvents 4) give diffraction bands
15. a) 58.5 g → " N " formula units 6. For an octahedral arrangement the lowest
radius ratio limit is
N 1) 0.155 2) 0.732 3) 0.414 4) 0.225
1g → formula units
58.5 7. In which of the following crystal systems
b) 4 formula units → 1 unit cell F.C.C unit cells exists ?
1) Cubic, hexagonal
N N 2) Tetragonal, orthorhombic
→ 1 unit cell
58.5 58.5 × 4 3) Orthorhombic, cubic 4) Triclinic, monoclinic
8. Out of seven crystal systems how many have
6 ×10 23
body centred unit cell ?
=
234 1) 4 2) 3 3) 2 4) 7
9. How many unit cells are possible for the
18. Simple cubic structure has least packing
crystallographic dimensions as a ≠ b ≠ c
efficiency
20. In any close packing, no.of spheres is equal to α = γ = 900 α ≠ β
no.of octahedral holes. 1) 2 2) 1 3) 4 4) 3
10. Which of the following systems is not
21. extrinsic semiconductors are formed by addition
correctly characterised ?
of impurity to intrinsic semiconductors.
1) cubic : a = b = c; α = β = γ = 900
38. Germanium is group 14 element while gallium
is group 13 element 2) tetragonal : a = b ≠ c; α = β = γ = 900
Hence, ahole will be created, i.e., it will be p- 3) orthorhombic : a ≠ b ≠ c; α = β = γ = 900
type semiconductor.
4) rhombohedral : a = b ≠ c; α = β = γ = 900
66 NARAYANAGROUP
11. The number of basic crystal systems is 23. Germanium is an example of
1) 7 2) 8 3) 6 4) 4 1) An intrinsic semiconductor
12. Bragg’s law is given by equation 2) An n-type semiconductor
1) nλ = 2θ sin θ 2) nλ = 2d sin θ 3) A p-type semiconductor
4) Insulator
1
3) 2 nλ = d sin θ 4) nλ = d sin θ 24. If Indium is added in small quantity of Ge
2
metal, we get
13. The number of atoms in a unit cell of a cubic
1) An n-type semiconductor
crystal system is 2, the arrangment of atoms
2) A p-type semiconductor
is
3) Rectifier
1) body centred cubic 2) face centred cubic
4) Insulator
3) end centred cubic 4) simple cubic
25. Silicon is a
14. In a face centred cubic cell, an atom at the
1) Conductor 2) Semiconductor
face centre is shared by
3) Non conductor 4) Metal complex
1) 4 unit cells 2) 2 unit cells
26. A diode is
3) 1 unit cell 4) 6 unit cells
1) only n type of semiconductor
15. A metallic element crystallises into a lattice
2) npn or pnp type of semiconductor
containing a sequence of layers of ABABAB..
3) only p type of semiconductor
Any packing of spheres leaves out voids in
the lattice. Percentage of empty space (by 4) only npn type of semiconductor
volume) is: 27. Column-A Column-B
1) 52% 2) 26% 3) 50% 4) 74% A) Glass 1) Framework silicate
16. Potassium crystallizes with a B) Quartz 2) Malleable & ductile
1) Face-centred cubic lattice C) Metallic crystal 3) Pseudo solid
2) Body-centred cubic lattice The correct match is
3) Simple cubic lattice A B C A B C
4) Orthorhombic lattice 1) 1 3 2 2) 3 1 2
17. In hcp arrangement in three dimensions, the 3) 2 1 3 4) 1 2 3
overall coordination number of each sphere 28. When ferromagnetic substances are heated
is strongly, its magnetic moment
1) 4 2) 6 3) 9 4) 12 1) Increases moderatly 2) remains constant
18. When molten Zn is cooled to solid state, it 3) abnormally increases 4) decreases
assumes hcp structure. Then the number of
nearest neighbours of Zn atoms will be LEVEL-I (H.W) - KEY
1) 4 2) 6 3) 8 4) 12 1) 4 2) 4 3) 4 4) 4 5) 4 6) 3 7) 3
19. The ratio of close packed atoms to tetrahedral 8) 2 9) 2 10) 4 11) 1 12) 2 13) 1 14) 2
holes in cubic close packing is
1) 1 : 1 2) 1 : 2 3) 1 : 3 4) 2 : 1 15) 2 16) 2 17) 4 18) 4 19) 2 20) 3 21) 1
20. In a solid lattice, the cation has left a lattice 22) 4 23) 1 24) 2 25) 2 26) 2 27) 2 28) 4
site and is located at interstitial position, the
lattice defect is LEVEL-I (H.W) - HINTS
1) intrinsic defect 2) Vacancy defect 15. AB, AB, AB..... arrangement represents hcp
3) Frenkel defect 4) Schottky defect packing
21. Schottky defect is found in 17. with in its plane 6, above the plane 3, below the
1) NaCl 2) BaSO4 plane 3
3) MgCl2 4) CaCl2 18. In hcp coordination
22. Non stoichiometric solid among the following no.of atoms = 12
1) MgO 2) CaO 3) Na2O 4) TiO 19. no.of tetrahedral holes are double the no.of
sphere.
NARAYANAGROUP 67
10. If the radius of K + and F − are 133pm and
LEVEL-II (C.W) 136pm respectively, the distance between K +
and F − in KF is
1. A solid melts slightly above 273 K and is a
1) 269pm 2) 134.5pm 3) 136pm 4) 3pm
poor conductor of heat and electricity. To
11. Number of unit cells in 4g of X(atomic
which of the following categories does it
mass=40). Which crystallises in bcc pattern
belong ?
1) ionic solid 2) covalent solid in ( N 0 = Avogadro number)
3) metallic 4) molecular.
0.1N 0
2. The consitutent particles in carborundum 1) 0.1N 0 2) 2 × 0.1N 0 3) 4) 2 × N 0
1) atoms 2) molecules 3) +ve ions 2
4) +ve ions in a sea of electrons 12. A metallic element has a cubic lattice. Each
3. A salt AB crystallises in the CsCl structure. edge of the unit cell is 2A0 . The density of
The anions at the corners and the cation in
the metal is 2.5gcm −3 . The unit cells in 200g
the centre. hence, radius ratio r+ / r− of metal are
1) 0.225 2) 0.441 3) 0.625 4) 0.732
1) 1× 10 24 2) 1× 10 20 3) 1× 10 22 4) 1× 10 25
4. The coordination numbers of oxygen and
13. In a hexagonal close packed (hcp) structure
silicon in SiO2 respectively. of spheres, the fraction of the volume
1) 1,2 2) 2,1 3) 2,4 4) 4,2 occupied by the spheres is A. In a cubic close
5. The crystal system of a compound with unit packed structure, the fraction is B. The
cell dimensions a = 0.387, b = 0.387 and relation for A and B is
c = 0.504 nm and α = β = 90o and γ = 120o is 1) A = B 2) A > B 3) A < B
4) A is equal to the fraction is a simple cubic
1) cubic 2) hexagonal
lattice
3) orthorhombic 4) rhombohedral
6. At what angles for the first order diffraction, 14. In a structure, A atoms have fcc
spacing between two planes respectively are arrangement, B atoms occupy all the
tetrahedral sites and C atoms occupy half the
λ octahedral sites. The formula of the
λ and 2 ?
compound is
o
1) 0 ,90 o o o o o o
2) 90 , 0 3) 30 ,90 4) 90 ,30 o 1) A2 B2 C2 2) A2 B4 C
7. Each unit cell of NaCl consists of 14 Chloride 3) AB2C 4) A4B2C
ions and _______. 15. In a hexagonal closest packing in two layers
+
1) 13 Na ions +
2) 14 Na ions one above the other, the coordination number
+
3) 6 Na ions +
4) 8 Na ions of each sphere will be
8. An element crystalizes in a structure having 1) 4 2) 6 3) 8 4) 9
F.C.C. unit cell of an edge 200 pm. Calculate 16. In a close packed lattics containing ‘n’
the density if 200 gm of it contains 24 × 1023 particles, the number of tetrahedral and
atoms octahedral voids respectively.
1) 41.6 gm/cm3 2) 42.6 gm/cm3 1) n, 2n 2) n, n 3) 2n, n 4) 2n, n/2
3) 43.6 gm/cm3 4) 44.6 gm/cm3 17. A body centered cubic solid is made up of
9. Na and Mg crystallize in BCC and FCC type two elements A and B, Atoms of ‘A’ occupy
of crystals respectively, then the number of two corners of the cube. Remaining positions
atoms of Na and Mg present in the unit cell of the unit cell are occupied by the atoms of
of their respective crystals is ‘B’. The formula of the compound is
1) 4,2 2) 9,14 3) 14,9 4) 2,4 1) A4 B7 2) A7 B4 3) AB7 4) A7 B
68 NARAYANAGROUP
18. A solid has a structure in which W atoms are 23. Total volume of atoms present in a face
located at the corners of the cubic lattice, O centred cubic unit cell of a metal is (r = radius
atoms at the centre of the edges and Na atom of atom)
at the centre of the cube. The formula of the 20 3 24 3 12 16
compound is 1) πr 2) π r 3) π r 3 4) π r 3
3 3 3 3
1) NaWO2 2) Na2WO3 24. The fraction of total volume occupied by the
3) NaWO3 4) NaWO4 atoms present in a simple cube is
19. A compound M p X q has cubic close packing π π π π

1) 2) 3) 4)
(ccp) arrangement of X, its unit cell structure 6 3 2 4 2 4
is shown below. The empericial formula of 25. A metal crystallizes with a face-centred cubic
the compound is lattice. The edge of the unit cell is 408 pm.
The diameter of the metal atom is
1) 288pm 2) 408pm 3) 144pm 4) 204pm
26. A semiconductor of Ge can be made p-type
by adding
1) trivalent impurity 2) tetravalent
3) pentavalent impurity 4) hexavalent impurity
27. Which one of the following ratio gives the
purity of the metal ( ρ -resistivity (or) specific
resistance)
ρ3000 C ρ300 K ρ 27 K ρ300 K
1) ρ 2) ρ 3) ρ 4) ρ
4.20 C 4.2 K 4K 40 C
28. Which of the following is correct statement

1) MX 2) MX 2 3) M 2 X 4) M 5 X 14 1) silicon doped with boron is p-type
20. The percentage of void space of a metallic semiconductor
element crystallising in a ABCABC.......type 2) silicon doped with arsennic is a n-type
lattice pattern is semiconductor
1) 24% 2) 26% 3) 34% 4) 74% 3) metals are not good conductors of electricity
21. If ‘a’ stands for the edge length of the cubic 4) electrical conductivity of semiconductors
systems: simple cubic, body centered cubic decreases with increasing temperature
and face centred cubic, then the ratio of radii 29. In x-ray diffraction experiment at which one
of the spheres in these systems will be of the following path difference between the
respectively. two waves, destructive interference is
a a 3 a 2 observed ( λ = wavelength of x-rays)
1) : : 2) a : 3a : 2a 1) λ 2) 2λ 3) 3λ 4) 1.5λ
2 2 2
a a 3 a a 3 LEVEL-II (C.W) - KEY

3) : : 4) : a : 3a
2 4 2 2 2 1) 4 2) 2 3) 4 4) 3 5) 2 6) 3 7) 1
22. A compound contains two types of atoms X
8) 1 9) 4 10) 1 11) 3 12) 4 13) 2 14) 2
and Y. It crystallises in a cubic lattice with
atoms X at the corners of the unit cell and 15) 4 16) 3 17) 3 18) 3 19) 2 20) 2 21) 3
atoms Y at the body centre. The simplest 22) 3 23) 4 24) 1 25) 1 26) 1 27) 2 28) 1
possible formula of this compound is
29) 4
1) X 8Y 2) X 2Y 3) XY 4) XY8
NARAYANAGROUP 69
LEVEL-II (C.W) - HINTS 1
22. X = 8 × Y = 1× 1
8
3. for bcc rc / ra =0.732 or above
4 3
6. nλ = 2d sin θ 23. v = π r
3
z.m
8. ρ= 4 3 16 3
N 0 .a 3 In fcc v = 4 × π r = π r
3 3
mass of 24 ×1023 atoms = 200 g 24. Packing fraction in simple cube
mass of 6 ×1023 atoms = 50 g 4 3 4 3
πr πr
3 π
m = 50, z = 4 3 here a = 2r ; ∴ =
( 2r ) 6
3
9. In B.CC, Z = 2, In FCC, Z = 4 a3
10. rk + + rF − = 269 pm a
25. In FCC, diameter =
11. 40 grams = N atoms 2
4 grams = 0.1N atoms
2 atoms form 1 unit cell in bcc LEVEL-II (H.W)
0.1× N
0.1N atoms =
2 1. Which of the following is not true about
12. v = a 3 = 8 × 10 −24 cc crystalline solids
1) They are rigid and hard
mass of 1 unit cell = v × d = 8 × 10−24 × 2.5 2) They possess plane surfaces
no. of unit cells in 200 grams of metal 3) They are obtained by rapid cooling of molten
200 substances
= −24
= 1× 1025 4) They have definite geometric configuration.
8 × 10 × 2.5 2. Which is not the property of crystalline solid
14. No.of ‘A’ atoms = x 1) anisotropic 2) isotropic
no.of ‘B’ atoms = 2 x (3 tetrahedral holes are 3) hard 4) dense
double the no.of spheres) 3. Naphthalene is a/an
1 1) ionicsolid 2) covalent solid
18. W = 8 × = 1 3) metallic solid 4) molecular solid
8
4. The greater the value of r+/r–
1 1) The lower will be the C.N.
O = 12 × =3
4 2) The higher the value of C.N.
3) The higher will be the number of cations
Na = 1×1 = 1
4) The lower will be the number of anions
∴ formula = NaWO3 5. The ratio of cationic radius to anionic radius
1 3 in an ionic crystal is greater than 0.732. Its
19. M = 4 × + 1× 1 = coordination number is
8 2
1) 6 2) 8 3) 1 4) 4
1 1 6. The second order Bragg diffraction of X-rays
X = 8× + 6× = 3
8 2 with λ = 1.00 Å from a set of parallel planes
in a metal occurs at an angle of 60°. The
M3
∴ formula = X3 distance between the scattering planes in the
2 crystal is
∴ M 3 X 6 = MX 2 1) 0.575 Å 2) 1.00 Å 3) 2.00 Å 4) 1.15 Å
70 NARAYANAGROUP
7. Sodium atom crystallises in body centred 13. In a solid AB having NaCl structure, ‘A’
cubic lattice with cell edge a=4.29A0. The atoms occupy the corners of the cubic unit
radius of sodium atom is cell. If all the face-centred atoms along one
0 0 of the axes are removed, then the resultant
1) 18.6 A 2) 1.86A 3) 186 nm 4) 1860pm stoichiometry of the solid is
8. (A) : With increase in temperature the 1) AB2 2) A2B 3) A4B3 4) A3B4
conductivity of metals decreases. 14. In hcp structure, the packing fraction is
(R) : With increase in temperature lattice 1) 0.68 2) 0.74 3) 0.50 4) 0.54
vibrations increase in metals
15. The number of octahedral voids in a unit cell
1. Both A and R are correct and R is correct of cubic close packed structure is
reason of A
1) 1 2) 2 3) 4 4) 8
2.Both A and R are correct and R is not correct
reason of A 16. In which of the following crystal the void
3.A is correct R is wrong efficiency is 32% ?
4.A is wrong R is correct 1) Zn 2) Po 3) Cu 4) Rb
9. A metal ‘M’ is crystallised in F.C.C lattice. 17. In a compound atoms of element ‘Y’ form
The number of unit cells in it having C.C.P lattice and those of element ‘X’ occupy
2/3rd of tetrahedral voids. The formula of
2.4 × 10 24 atoms.
the compound will be
1) N 2) N/2 3) 2N 4) 4N
10. The cubic unit cell of a metal (molar mass = 1) X 2Y3 2) X 2Y 3) X 3Y4 4) X 4Y3
63.55gmol −1 ) has an edge length of 362pm. 18. When molten zinc is cooled to solid state, it
assumes HCP structure. Then the number
Its density is 8.92gcm −3 . The type of unit cell of nearest neighbours of zinc atom will be
is 1) 4 2) 8 3) 6 4) 12
1) primitive 2) face centred 19. Sodium crystallizes in a bcc lattice, hence the
3) body centred 4) end centred coordination number of sodium in sodium
11. CsBr crystallises in a body centred cubic metal is
lattice. The unit cell length is 436.6pm. Given 1) 0 2) 4 3) 6 4) 8
that the atomic mass of Cs = 133u and that
20. The metal having 26% void space in its
of Br = 80u and Avogadro number being crystal structure is
−1 , the denisty of CsBr is
6.02 × 10 mol
23
1) Cs 2) Po 3) Mo 4) Be
1) 42.5 g / cm3 2) 0.425 g / cm3 21. Three elements A,B and C crystallise into a
cubic solid lattice. Atoms A occupy the
3) 8.25 g / cm3 4) 4.25 g / cm3 corners, B atoms, the cube centres and C
12. Assertion (A): Group-15 doped crystals of silicon atoms, the edge. The formula of the
are called a n-type semiconductor. compound is
Reason (R): Neutrons, are responsible for 1) ABC 2) ABC2 3) ABC3 4) ABC4
the semiconducting properties.
1. Both A and R are correct and R is correct 22. In a closed packed sructure
reason of A 1) tetrahedral voids and bigger than octahedral
2.Both A and R are correct and R is not correct 2) tetrahedral voids are smaller than octahedral
reason of A 3) tetrahedral voids are equal in size as
3.A is correct R is wrong octahedral
4.A is wrong R is correct 4) None of the above
NARAYANAGROUP 71
23. Structure of a mixed oxide is cubic close 32. In FCC crystal, which of the following shaded
packed (c.c.p),. The cubic unit cell of mixed planes contains the following type of
oxide is composed of oxide ions. One fourth arrangement of atoms
of the tetrahedral voids are occupied by
divalent metal A and the octahedral voids are
occupied by a monovalent metal B. The
formula of the oxide is
1) ABO2 2) A2 BO2 3) A2 B3O4 4) AB2O2
24. Ferrimagnetism is in
1) ↑↑↑↑↑ 2) ↑↓↑↓
3) ↑↑↑↓↓ 4) ↑↑↓↓↑↑↑↓↓↓
25. Ferromagnetism is in
1) ↑↑↑↑↑ 2) ↑↓↑↓
3) ↑↑↑↓↓ 4) ↑↑↓↓↑↑↑↓↓↓
26. Magnetic property of VO2 is
1) dia magnetic 2) paramagnetic
3) Ferromagnetic 4) Anti ferromagnetic
27. The general formula of ferrites is MFe2O4 .
Where ‘M’ would not be
1) Mg 2) Cu 3) Al 4) Zn
28. The crystal system without any element of
symmetry is
33. If the molar mass of AB is 100g mol −1 and ‘a’
1) monoclinic 2) hexagonal
is edge length then the density of the crystal
3) triclinic 4) cubic
will be
29. The first order diffraction of x-rays from a
certain set of crystal planes occurs at an angle 4N A 4 × 100
1) 2) a3 N A
of 11.80 from the planes. If the planes are a 3 ×100
0.281 nm apart, the wavelength of x-rays is 2 × 100
2N A
( s i n 1 1 . 8 0
= 0 . 2 ) 3)
a 3100
4) a3 N A
1) 0.1124 nm 2) 1.124 nm 34. The intermetallic compound LiAg
3) 0.0578 nm 4) 0.578 nm crystallizes in cubic lattice in which both
30. Potassium crystallises in a body centred cubic lithium and silver have co-ordination number
unit cell. the mass of one unit cell is of eight. The crystal class is
−23 −22
1) 1.29 × 10 gm 2) 1.295 × 10 gm 1) simple cubic 2) body centered cubic
3) face-centered cubic 4) none of these
3) 6.2 ×10−23 gm 4) 1.29 × 10−24 gm
31. First three nearest neighbour distance for LEVEL-II (H.W) - KEY
body centered cubic lattice are
1) 3 2) 2 3) 4 4) 2 5) 2 6) 4 7) 2
a 8) 1 9) 1 10) 2 11) 3 12) 3 13) 4 14) 2
1) 2a, a, 3a 2) , a 3, a
2 15) 3 16) 4 17) 4 18) 4 19) 4 20) 4 21) 3
3a 3a 22) 2 23) 4 24) 3 25) 1 26) 2 27) 2 28) 3
3) , a, 2a 4) , a 3a
2 2 29) 4 30) 2 31) 3 32) 1 33) 2 34) 2
72 NARAYANAGROUP
LEVEL-II (H.W) - HINTS 2. Assertion A : In sodium chloride crystal, the
6. nλ = 2d sin θ Na+ ion occupies the octahedreal void while
Cl- ions occupy the vertices of octahedron
3a Reason R : The radius ratio Na+ : Cl- lies
7. In bcc radius of atom (r) = between 0.414 to 0.732
4
3. Assertion A : Glass belongs to the category
8. mass one unit cell = 2.39 ×1.66 ×10−24 g of ionic solid
9. One unit cell contains 4 atoms Reason R : Glass is supercooled liquid
1 4. Assertion A : In CsCl crystal, the co-
1 atom is present in unit cells ordination number of Cs+ ion is 8
4
Reason R : Cl- ion in CsCl adopt fcc type of
2.4 × 10 atoms are present in
24
packing
1 5. Assertion A : For compounds exhibiting
2.4 × 1024 × = 6 × 1023 = N Frenkel defect, the density remains unaltered.
4
Reason R : Doping of group 14 element with
zm suitable element of group 13 produces p-type
10. ρ = N a 3 of semiconductors
0
6. Assertion A : In FCC, coordination number
12. In bcc, coordination no.of atoms is 8
is eight
13. The atoms which occupy at the corners are also
Reason R : In FCC, arrangement of atoms
exist in the face centre
is ABC, ABC type
effective no.of ‘A’ atoms
7. Assertion A : In silicates oxidation number
1 1 of silicon is -4.
= 8 × + 4 × = 3 (3 two atoms from the face
8 2 Reason R : In silicates each silicon atom is
centre are removed) directly bonded to four oxygen atoms
effective no.of ‘B’ atoms tetrahedrally
8. Assertion A : In rock salt structure all the
1
= 12 × + 1× 1 = 4 ∴ Formula - A3 B4 octahedral voids in the close packing of
4 anions are occupied by cations
ASSERTION & REASON TYPE Reason R : In rock salt structure, the distance
of closest approach between two anions is
QUESTIONS
equal to half the face diagonal of the unit cell
The following questions consist of two
9. Assertion A : BCC arrangement is less closely
statements one labelled as Assertion A and the
packed than CCP arrangement
other Reason R. Examine both the statements
Reason R : In CCP arrangement, the two
carefully and mark the correct choice atoms at the corners of the unit cell are
according to the instructions give below : touching each other whereas in BCC
1. if both A and R are correct and R is correct arrangement, they are not touching each
reason of A other.
2. if bothe A and R are correct but R is not correct 10. (A) : Glass possess sharp melting point.
reason of A (R) : Glass is a pseudo solid
3. if A is correct R is wrong 11. (A) : Thermodynamically all solids possess a
4. if A is wrong R is correct tendency to acquire defects
1. Assertion A : Schottky defect is generally (R) : During defects the entropy of the system
shown by the compounds with high co- increases in solids.
ordination number. 12. (A) : Schottky and Frenkel defects are also
Reason R : In Schottky defect equal number called as ‘thermo dynamic deffects’
of anions and cations are missing from their (R) : Both Schottky and Frenkel defects
lattice sites increase with increase in temperature
NARAYANAGROUP 73
13. (A) : A void surrounded by a triangle of 4. Assertion(A): White tin is an example of
speheres capped by another sphere is called tetragonal system.
tetrahedral void. Reason (R): For a tetragonal system a=b=c
(R) : Tetrahedral voids are in tetrahedral and α = β = γ ≠ 900 . [EAM-2010]
arrangement
1) A and R are true and R is the correct
14. (A) : During vacancy defect the density of
explanation of A
solid decreases
2) A and R are true and R is not the correct
(R) : The vacancies in the lattice lower the
explanation of A
denisty of solid
3) A is true but R is not true
15. Assertion (A): Electrical conductivity of
4) A is not true but R is true
semiconductors increases with increasing
0
temperature 5. If the length of the unit cell is 5 A , the smallest
Reason (R): With increase in temperature, 0
large number of electrons from the valence distance in A between the two neighbouring
band can jump to the conduction band. metal atoms in a face centred cubic lattice is
16. Assertion (A): Group-15 doped crystals of [EAM-2011]
silicon are called a n-type semiconductor. 1) 2.50 2) 5.00 3) 7.07 4) 3.535
Reason (R): Neutrons, are respmsible for the 6. Which one of the following elements, when
semiconducting properties. present as an impurity in silicon makes it a
17. (A) : With increase in temperature the p-type semiconductor? [EAM-2012]
conductivity of metals decreases 1) As 2) P 3)In 4)Sb
(R) : With increase in temperature lattice 7. The number of octahedral and tetradedral
vibration in metals holes respectively present in a hexagonal
close packed(hcp) crystal of ‘X’ atoms are
KEY [EAM-2013]
1) X,2X 2) X,X 3) 2X,X 4) 2X,2X
1) 2 2) 1 3) 4 4) 3 5) 2 6) 4 7) 4 8. Which of the following elements on doping
8) 2 9) 3 10) 4 11) 1 12) 1 13) 3 14) 1 with germanium, takes it a p-type
15) 1 16) 3 17) 1 semiconductor? [EAMCET 2014]
1)As 2) Ga 3) Bi 4) Sb
PREVIOUS EAMCET QUESTIONS PREVIOUS EAMCET - KEY
1. For a catalyst, the angle of diffraction(20) is 1)3 2) 2 3) 4 4)3 5) 4 6) 3 7) 2 8) 2
900 and the second order line has a d value
0
of 2.28 A . The wavelength (in A 0
) of X-rays LEVEL-III
used for Bragg’s diffraction is [EAM- 2008]
1) 1.14 2)2.00 3) 2.28 4) 4.00 1. The volume of the HCP unit cell is
2. The Cubic Unit cell of a metal (molar mass = 16 3 12 3 64 3
63.55 g mol-1) has an edgte length of 362pm. 1) 24 2r 3 2) r 3) r 4) r
2 2 3 3
Its density is 8.92 g .cm −3 . The type of unit cell
is [EAM-2009] 2. Column-I Column-II
1) Primitive 2) Face centred A) Dry ice p) Ionic solid
3) Body centred 4) End centred B) Silica q) Molecular solid
3. The ratio of anion radius to cation radius of C) Brass r) Network solid
a crystal is 10:9.3. Then, the coordination D) Wurtzite s) Metallic solid
number of the cation in the crystal is [2010] 1) A-q; B-r; C-s; D-p 2) A-p; B-q; C-s; D-r
1) 2 2) 4 3) 6 4) 8 3) A-r; B-q; C-s; D-p 4) A-p; B-q; C-r; D-s
74 NARAYANAGROUP
3. Given ionic radii (pm): B 3+ = 27, Mg 2+ = 65 , 8. NaCl is doped with 10−3 mol percent
Cs + = 169, O 2− = 140, S 2− = 184, Cl − = 181 SrCl2 .The concentration of cation vacancies

Column-I Column-II per mole of NaCl will be
(Compound) (Coordination No.) 1) 6.02 ×1015 2) 6.02 ×1018
A) MgO p) 3 3) 6.02 ×1020 4) 6.02 ×1023
B) B2O3 q) 4 9. Lithium selenide can be described as a cubic
C) MgS r) 6 closest-packed array of selenide ions with
lithium ions in all of the tetrahedral holes.
D) CsCl s) 8
Formula of lithium selenide is
1) A-p; B-r; C-q; D-s 2) A-r; B-p; C-q; D-s
3) A-r; B-p; C-s; D-q 4) A-r; B-q; C-p; D-s 1) Li2 Se 2) LiSe 3) LiSe2 4) Li3 Se
4. A solid AB has CsCl - type structure. Edge 10. Which of the following expression is
length of the unit cell is 4.04 A0. The distance correct for packing fraction of NaCl if the
+
of closest approach between A and B is - ions along the face are diagonally removed
1) 4.0 A0 2) 6.4 A0 3) 3.5 A0 4) 7.0 A0 13 3 16 3 13 3 4 3
5. Which is not correct about valence bond π r− + π r+ π r− + π r+
1) 3 3 2) 3 3
theory of metals
8 ( r+ + r− ) 8 ( r+ + r− )
3 3
1) It is also called resonance theory
2) It was proposed by Linus Pauling
16 3 13 3 4 3 13 3
3) The metallic bond is essentially a polar (or) π r− + π r+ π r− + π r+
non polar covalent bond 3) 3 3 4) 3 3
8 ( r+ + r− ) 8 ( r+ + r− )
3 3
4) It explains metallic lustre
6. For the structure given below the site 11. Which is true
marked as S is a : 1) Rochelle’s salt is ferroelectric while lead
zirconate is antiferroelectric
2) Rochelle’s salt is antiferroelectric and lead
zirconate is ferroelectric
3) Both are ferroelectric
4) Both are antiferroelectric
12. Edge length of a cubic unit cell is 400 pm. Its
face diagonal would be
1) 600 pm 2) 200 pm 3) 566 pm 4) 692 pm
13. Body diagonal of a cube is 866 pm. Its edge
1) Tetrahedral void 2) Cubic void
length would be
3) Octahedral void 4) None of these
1) 408 pm 2) 1000 pm
7. Silica ( SiO2 ) can be crystalline as well as 3) 500 pm 4) 600 pm
amorphous, with following properties 14. The radius of Na+ is 95 pm and that of Cl– is
I : crystalline 181 pm. The edge length of unit cell in NaCl
would be (pm)
II : the SiO44− tetrahedra are randomly joined
1) 181 2) 95 3) 276 4) 552
giving rise to polymeric chains of three- 15. A metal crystallizes in two cubic phases, fcc
dimensional sheets
III : have high and sharp m.p and bcc whose unit cell lengths are 3.5 A0 and
Which of I, II and III are not matched with 3.0 A0 respectively. The ratio of density of fcc
amorphous solids and bcc is
1) I 2) III 3) I,III 4) II 1) 2 2) 1.26 3) 3.34 4) 1.8
NARAYANAGROUP 75
16. An element cyrstallises in a ‘bcc’ lattice. 23. The composition of a sample of wurstite is
Nearest niehgbours and percentage of volume Fe0.93O1.00 . Percentage of iron present in the
occupied by spheres in the unit cell is
form of iron (III) is nearly
1) 8, 74% 2) 8, 68 % 3) 6, 74% 4) 6, 68%
1) 85 2) 15 3) 7.00 4) 93.00
17. In a face centred cubic arrangement of A and
24. Ar crystallizes in an F.C.C. lattice with one
B atoms whose A atoms are at the corner of
atom at each lattice point. If the unit cell
the unit cell and B atoms at the face centres.
One of the A atom is missing from one corner length is 5.311Ao at OK, the nearest
in unit cell. The simplest formula of neighbour distance in Ar at OK is
compound is 1) 3.755 Ao 2) 4.75 Ao 3) 6.25 Ao 4) 7.33 Ao
1) A7 B3 2) AB3 3) A7 B24 4) A8 B21 25. In a crystal of an ionic compound, the ions B
form the close packed lattice and the ions A
18. Ice crystallises in a hexagonal lattice having
occupy all the tetrahedral voids. The formula
volume of the unit cell as 132 × 10−24 cm3 . If of the compond is
density is 0.92g cm−3 at a given temperature, 1) AB2 2) A2 B 3) AB 4) AB3
then number of H 2O molecules per unit cell 26. the major binding force of diamond, silicon
is and quartz is
1) 1 2) 2 3) 3 4) 4 1) Electrostatic force
2) Covalent bond force
o
19. Edge length of M + X − (fcc structure) is 7.2 A . 3) Non covalent bond force
Assuming M + − X − contact along the cell 4) van der Waal’s force
27. The edge lengths of the unit cells in terms of
 o
 the radius of spheres constituting fcc, bcc and
edge, radius of X − ion is  rM + = 1.6 A  :
  simple cubic unit cell respectivley
o o o o 4r 4r
1) 2.0 A 2) 5.6 A 3) 2.8 A 4) 3.8 A 1) 2 2r , , 2r 2) , 2 2r , 2r
3 3
20. A binary solid ( A+ B − ) has a rock salt
structure. If the edge length is 400 pm and 4r 4r
radius of cation is 75 pm the radius of anion 3) 2r , 2 2r , 4) 2r , , 2 2r
3 3
is
28. The composition of a sample of formula
1) 100 pm 2) 125 pm 3) 250 pm 4) 325 pm
21. A solid has a bcc structure. If the distance of Ni0.98O1.00 percentage nickel present in the
closest approach between the two atoms is form of Ni ( III ) is nearly
o
1.73 A . The edge length of the cell is 1) 96 2) 4 3) 7 4) 93
29. Niobium crystallises in bcc-If the density is
1) 200 pm 2) 3 / 2 pm
8.55gcm −3 , the atomic radius of Niobium is
3) 142.2 pm 4) 2 pm
(atomic mass 93gmol −1 )
22. A metal crystallises as body centred cubic
lattice with the edge length of unit cell equal 1) 143pm 2) 331pm 3) 190pm 4) 300pm
to 0.304 nm. If the molar mass of the metal 30. The metal calcium crystallises in fcc unit cell
with a = 600pm. The density of metal if it
is 50.3 g mol −1 , its density is contains 0.2% schottky defects.
−3 −3
1) 5.945 g cm 2) 2.9725 g cm 1) 2.05 g / cc 2) 5 g / cc
3) 8.9175 g cm −3 4) 4.458 g cm −3 3) 20 g / cc 4) 50 g / cc
76 NARAYANAGROUP
31. Density of Li is 0.53 g / cm3 . The edge length C) rMg 2+ / rS 2− = 65 /184 = 0.353 (lies in the
of Li is 3.5A0 .The number of Li atoms in a range 0.225-0.414) → Tetrahedral. Coord no.
unit cell is ( M = 6.94 ) =4
1) 2 2) 4 3) 1 4) none D) rCs + / rCl − = 169 /181 = 0.934 (lies in the
range 0.732-1) → BCC. Coord. no. = 8
LEVEL-III - KEY 4. A) Simple cubic and FCC have a = b = c,
1) 1 2) 1 3) 2 4) 3 5) 4 6) 3 7) 3 α = β = γ = 900 and belong to the same crystal
8) 2 9) 1 10) 1 11) 2 12) 3 13) 3 14) 4 system (cubic).
15) 2 16) 2 17) 3 18) 4 19) 1 20) 2 21) 1 B) Cubic (a = b = c, α = β = γ = 90 ) 0
Rhombohedral ( a = b = c, α = β = γ ≠ 90 ) .
22) 1 23) 2 24) 1 25) 2 26) 2 27) 1 28) 2 0
29) 1 30) 1 31) 1

These are two different crystal systems.
C) Cubic and tetragonal are two different crystal
LEVEL-III HINTS systems.
1. Base area of regular hexagon = Area of 6 D) Hexagonal : α = β = 900 (γ = 1200 )
equilateral triangles each with side ‘a’
Monoclinic : α = γ = 900 ≠ β , i.e., each has
3 2
=6 a two crystallographic angles of 900 . Further,
4
these are two different crystal systems.
Height of the unit cell ( h ) = 2 × Distance 10. On face diagonal of NaCl , 3Cl − (2 corners +1
between adjacent layers f.c) present. If ions along f.c are removed, ∴
volume occupied
2
= 2× a  1 1 4
3 = (8 − 2 ) × + (6 − 1) ×  π r 3
 8 2 3
∴ Volume of the unit cell = Base area × height
 1 1 4
6 3 2  2  =  6 × + 5×  × π r3
=  a  ×  2 a  = 3 2a 3
 8 2 3
 4   3 
3 5 4
Putting a = 2 r, volume = 24 2r 3 =  +  × π r3
4 2 3
2. A) Dry ice = Molecular solid (containing H 2O
 3 + 10  4 3
molecules held together) =  πr
 4 3
B) Silica = Network solid ( SiO2 forming a
13 4
network through covalent bonds) = × π r3
4 3
C) Brass = Metallic solid (Copper + Zinc)
2+ 2−
D) Wurtzite = Ionic solid ( ZnS ) 12. a = 400 pm
length of face diagonal = 2a
3. A) rMg 2+ / rO2− = 65 /140 = 0.464 (lies in the 13. Length of body diagonal = 3a
range 0.414-0.732) → Octahedral.Coord.no. =
14. Edge length = 2 ( rc + ra )
6
B) rB3+ / rO2− = 27 /140 = 0.193 (lies in the rangeρ1 z1 ( a2 )
3
15. ρ = z .
2 ( a1 )
3
0.155-0.225) → Planar triangular coord no. = 3 2
NARAYANAGROUP 77
17. Effective no.of ‘A’ atoms 25. No.of ‘B’ atoms = x
1 7 No.of ‘A’ atoms = 2 x
= 7× =
8 8 formula = A2 B
effective no.of ‘B’ atoms 28. 3x + 1.96 − 2 x = 2
= 6×
1
=3 x + 1.96 = 2 ; x = 0.04 ; % = 4
2 29. a 3 = 3.31× 10 −24 cc
formula = A7/8 B3 = A7 B24
a = 3.31×10−8 cm = 331 pm
ρ .N 0 .V
18 z= 3a
M r= = 143 pm
4
19. Edge length ( a ) = 2 ( rc + ra ) 30. Due to schottky defects no. of atoms decreases
2ra = a − 2rc 0.2
z = 4 − 4× = 3.992
100
a − 2rc
ra =
2 z.m
ρ=
N0 a3
20. Edge length ( a ) = 2 ( rc + ra )
21. Closest approach between two atoms in bcc= z.m
31. ρ = N a 3
0
3a
2 PREVIOUS MAINS QUESTIONS
ZM 1. In a compound atoms of element Y from ccp
22. ρ = N .a 3 lattice and those of element X occupy 2/3rd
0
of tetrahedralvoids. The formula of the
here z = 2, a = 0.0304 × 10-7 cm compound will be [MAIN 2008]
23. Let, the sample contains 93 Iron ions and 100 1) X4Y3 2) X2Y3 3) X2Y 4) X3Y4
oxide ions.
2. Copper crystallizes in fcc with a unit cell
Total negative charge on oxide ions = 100 length of 361 pm. What is the radius of copper
× -2 = -200 atom? [MAINS 2009]
No.of Fe+3 ions = x 1)108 pm 2)127 pm 3)157 pm 4)181 pm
No.of Fe+2 iron ions = 93 - x 3. The edge length of a face centered cubic cell
Total positive charge = x ( +3) + (93 − x )( +2 ) of an ionic substance is 508 pm. If the radius
of the cation is 110 pm, the radius of the anion
numarically +ve charge and -ve charge
is [MAINS 2010]
are equal ∴ 3 x +(93- x )2 = 200
1)288 pm 2)398 pm 3)618 pm 4)144 pm
∴ x =14 4. In a face centred cubic lattice, atom A
14 occupies the corner positions and atom B
% of Fe+3 = × 100 = 15.05% occupies the face centre positions. If one atom
93
of B is missing from one of the face centred
24. edge length (a) = 5.311 A0
points, the formula of the compound is
a [MAINS 2011]
distance between nearest neighbours =
2 1) AB2 2) A2 B3 3) A2 B5 4) A2 B
78 NARAYANAGROUP
5. Lithium forms body centred cubic structure. 5. For BCC, 3a = 4r
The length of the side of its unit cell is 351
pm. Atomic radius of the lithium will be 3 × 351
[MAINS 2012] r= = 152 pm
4
1) 75 pm 2) 300 pm 3) 240 pm 4)152 pm
6. Silicon exists as covalent crystals in the solid
6. Which of the following exists as covalent
crystals in the solid state? [MAINS 2013] state.
+
1) Iodine 2) Silicon 7. In CsCl structure, Cs ion is in contact with
3) Sulphur 4) Phosphorus Cl − ion at the nearest distance which is
7. CsCl crystallises in body centred cubic lattice.
If ‘a’ is its edge length then which of the a
equal to 3
following expressions is correct? 2
[MAINS 2014]
3
LEVEL-IV
1) rCs + + rCl − = a 2) rCs+ + rCl − = 3a
2
1. Ionic radii of Mg2+ and O2- ions are 66 pm
3a and 140 pm respectively. The type of
3) rCs + + rCl − = 3a 4) rCs + + rCl − =
2 interstitial void and coordination number of
Mg2+ ion respectively are
PREVIOUS MAINS - KEY 1) tetrahedral, 12 2) octahedral, 6
1)1 2) 2 3) 4 4) 3 5) 4 6) 2 7) 1 3) tetrahedral, 6 4) octahedral, 8
2. An element crystallizes in a structure having
HINTS FCC unit cell of an edge length 200 pm. If
1. No. of atoms of Y = 4 200 g this element contains 24 x 1023 atoms,
the density of the element is
2 1) 50.3 g/cc 2) 63.4 g/cc
No. of atoms of X = × 8
3 3) 41.6 g/cc 4) 34.8 g/cc
Formula of compound will be X4Y3 3. Iron has body centred cubic lattice. If the
2. For FCC, edge length of the unit cell is 286 pm, the
radius of iron atom is
2a = 4r (the atoms touches each other 1) 80 pm 2) 62 pm 3) 160 pm 4) 124 pm
along the face- diagonal) 4. Column-I Column-II
2a 2 × 361 A) Simple cubic and p) Have these cell
r= = = 127 pm face-centred cubic parameters
4 4
a = b = c, α = β = γ
3. For an ionic substance in FCC arrangement, B) Cubic and q) are two crystal
2 ( r + + r − ) = edge length rhombohedral systems
C) Cubic and tetragonal r) have only two
2 (110 + r − ) = 508 ; r − = 144 pm crystallographic
1 angles of 900
4. Effective no.of A atoms = ×8 = 1
8 D) Hexagonal and s) belong to the same
1 monoclinic crystal system
Effective no.of B atoms = ×5 1) A − p, s; B − p, q; C − q; D − q, r
2
5 2) A − p, q; B − p, s; C − q, r; D − p
(One is missing) =
2 3) A − q , s; B − r ; C − q , r ; D − q
A1 B5 = A2 B5 4) A − q; B − r ; C − p, s; D − q, r
Therefore formula is
2
NARAYANAGROUP 79
5. LiCl has rock salt structure, with an edge 13. In a compound, atoms of element Y form
length of 6.0A0. If anions are in contact, the cubical - closest packing and those of element
ionic radius of chloride ion is X occupy 2/3 of tetrahedral voids. The
1) 2.12 A0 2) 1.82 A0 3) 4.24 A0 4) 3.68 A0 formula of the compound will be
6. In a solid between A and B atoms atoms of A
are arranged in ccp array and atoms of B 1) X3Y 2) X4Y3 3) X2Y3 4) X2Y
occupy all the octahedral voids and half of STATEMENT OR
the tetrahedral voids. The formula of the
ASSERTION AND REASON TYPE
compound is
In each sub question below a Statement -I
1) A2B 2) A3B4 3) AB2 4) AB3 and a Statement- II is given. Choose the
7. Aluminium crystallizes in a cubic close correct answers from the codes A,B, C,D
packed structure. Its metallic radius is given for each question.
125pm. The edge length of the unit cell and 1) I is correct but II is wrong
number of unitcells per cc of aluminium 2) I is wrong but II is correct
respectively are 3) Both I and II are correct and II is correct
1) 354 pm, 2.25 x 1022 2) 648 pm, 3.3 x 1023 explanation of I
3) 298 pm, 1.25 x1022 4) 436 pm, 6.3 x 1022 4) Both I and II are correct but II is not correct
8. If the radius of octaherdal void is ‘r’ and explanation of I
radius of the atoms in close packing is ‘R’, 14. Statement-I : Initially the term pseudo solid
then the relation between ‘r’ and was given for solids which were easily
‘R’ is distorted by bending and compressing forces.
They even tend to flow slowly under its own
1) r = 0.732 R 2) r = 0.414 R
weight and lose shape.
3) r = 0.98 R 4) r = 0.225 R
Statement-II : These characteristics are
9. Ammonium chloride crystallizes in a body - shown by pseudo solids as in pitch, glass and
centred cubic lattice with a unit distance of thus the name pseudo solid was replaced by
387 pm. If the size of Cl- ion is 181 pm, the super cooled liquids.
size of NH+4 ion would be 15. Statement-I : The close packing of atoms in
1) 206 pm 2) 116 pm 3) 174 pm 4) 154 pm cubic structure is in the order fcc > bcc > sc
10. The concentration of cation vacancies per Statement-II :
mole when NaCl is doped with 10-3 mole % Volume of unit cell
of SrCl2 Packing density =
a3
1) 6.023 × 1020 2) 6.023 × 1023 16. Statement-I : In hexagonal close packing
3) 6.023 × 1021 4) 6.023 × 1018 voids are between three touching spheres
11. First order X - ray reflection ( λ = 154 pm) is whose centres lie at the corners of an
maximum from a set of (2, 0, 0) planes of a equilateral triangle.
bcc lattice was observed at 16061. Then the Statement-II: In hexagonal close packing
edge length of unit cell is voids are called square voids.
(Sin 16061 = 0.2773) 17. Statement-I : Bragg’s equation has no
1) 360 pm 2) 420 pm solution if n = 2 and λ > d.
3) 560 pm 4) 180 ppm Statement-II :
12. Total volume of atoms present in a face - Bragg’s equation is :n λ = 2d sin θ
centred cubic unit cell of a metal is (r is atomic 18. Statement-I : 6 : 6 co-ordination at normal
radius) temperature and pressure changes to 8 : 8
co-ordination at high pressure.
16 3 20 3 24 3 12 3 Statement-II: Pressure influences the
1) πr 2) πr 3) πr 4) πr
3 3 3 3 structure of solids
80 NARAYANAGROUP
19. Statement-I: Solids having more F - centres 25. Match electrical properties listed in Column-
possess intense colours II with materials listed in Column-I
+
Statement-II: Excess of Na in NaCl solid Column-I
having F - centres makes it appear to pink a) Pure crystal of silicon at 0 K
20. Statement-I: The conductance through b) Pure crystal of silicon at 400 K
electrons is called n-type conduction and if c) Silicon crystal doped with arsenic impurity
through positive semiholes it is called p - type d) Silicon crystal doped with gallium
conduction. Column-II
Statement-II: Doping involves preparation of p) Semi conductor-p-holes carry current
semi-conductors by thepresence of impurities q) Semi conductor-electrons carry current
in the intrinsic semi-conductor. r) Insulator
s) Semiconductor-equal number of p-holes and
MATRIX MATCHING TYPE electrons carry current
21. Column - I Column - II
A) Tetragonal and (P)Two crystal systems COMPREHENSION TYPE
Hexagonal I. In zinc blende structure anions are arranged
in ccp and cations are present in the
B) Cubic and (Q) Cell parameters
tetrahedral voids and only half the
Rhombohedral a=b=c, α = β = 900 tetrahedral voids are occupied.
but γ are different 26. The coordination numbers of cation and
C) Monoclinic and (R) a ≠ b ≠ c anion are respectively
Triclinic 1) 4 and 8 2) 4 and 4 3) 8 and 4 4) 8 and 6
D) Cubic and hexagonal (S) a = b = c 27. For this type of structure, radius ratio r+/r-
22. Column - I Column - II should be in the range
A) Cu (P) FCC 1) 0.225 - 0.414 2) 0.155 - 0.225
B) KCl (Q) BCC 3) 0.414 - 0.732 4) 0.732 - 1
C) Cs (R) Metallic solid 28. If ‘a’ is the edge length of the unit cell then
D) CsBr (S) Rock salt structure for zinc blende structure the distance of
23. Column - I Column - II closest approach between cation and anion
A) ZnO (P) Frenkel defect is
B) ZnS (Q) Schottky defect
C) AgBr (R) Cubic crystal system 2a 3a 2a 3a
1) 2) 3) 4)
D) NaCl (S)Hexagonal crystal system 2 2 4 4
24. Match the characteristics listed in Column- II An element occurs in the body centred cubic
II with solids listed in Column-I : lattice with cell edge of 300 pm. The density
Column-I (Solids) of the element is 8.0 g/cm 3. Answer the
a) piezoelectric following
b) Antipiezoelectric 29. The number of nearest neighbours and the
c) Ferroelectric next nearest neighbours are respectively
d) Pyroelectric 1) 4 and 6 2) 4 and 8 3) 8 and 8 4) 8 and 6
Column-II (Characteristics)
30. The distance of closest approach between the
p) Electric dipoles spontaneously aligned in one
two atoms of the element in the lattice is
direction
q) Heating causes electric field 1) 260 pm 2) 300 pm 3) 600 pm 4) 150 pm
r) Mechanical stress causes electric field 31. The atomic mass of the element is
s) Electric field causes elastic deformation 1) 65 2) 60 3) 52 4) 80
NARAYANAGROUP 81
III. A solid made up of ions of A and B posssess Passage
edge length of unit cell 0.564 nm has four Following is the fact about the newly
formula units. among the two ions the discovered superconductor of C60
smaller one occupy the interstital void and
(fullerence). The alkali metal fulleride
the larger ions occupy the space lattice with
ccp type of arrangement. One molecule of superconductor M 3C60 has a cubic closest-
-23
solid has mass 9.712 x 10 g. packed (face0centered cubic) arrangement of
3−
32. The density of solid is nearly spherical C60 anions with M + cations
1) 2.16 g/cm3 2) 0.54 g/cm3 in the holes between the larger C603− ions. The
3 3
3) 1.08 g/cm 4) 1.562 g/cm holes are of two types-octahedral holes, which
33. The ionic radius for B- ion assuming anion - 3−
are surrounded octahedrally by six C60 ions,
anion contact is :
and tetrahedral holes, which are surrounded
1) 1.815 A0 2) 1.994 A0 3−
0
tetrahedrally by four C60 ions.
3) 1.682 A 4) 1.712 A
3−
34. The solid AB is supposed to show : 38. How many C60 ions, octahedral holes, and
1) Schottky defect tetrahedral holes are present per unit cell
2) Frenkel defect 1) 5,4,4 2) 3,8,4 3) 4,4,8 4) 2,1,2
3) Non - stoichiometric defect 39. The ionic radii of Na + , K + and Rb + are
4) None of these. 97,133 and 147 pm, respectively. Which of
these ions will fit into the octahedral holes?
Passage 3−
(radius of C60 is about 350 pm)
A spinel is an important class of oxides
1) Na + 2) K +
consising of two types of metal ions with the
oxide ions arranged in ccp layers. The normal 3) Rb + 4) all of theses
spinel has one-eight of the tetrahedral holes
occupied by one type of metal ion and one- LEVEL - IV - KEY
half of the octahedral holes occupied by
another type of metal ion. Such a spinel is 1) 2 2) 3 3) 4 4) 1 5) 1 6) 3 7) 1
formed by Mg 2+ , Al 3+ & O 2− . The neutrality 8) 2 9) 4 10) 4 11) 3 12) 1 13) 2 14) 4
of the crystal is maintained. 15) 3 16) 1 17) 3 18) 3 19) 1 20) 4
35. The formula of the spinel is
21) A-P; B-P,S; C-P,R; D-P
1) Mg 2 AlO4 2) MgAl2O4
22) A-P,R; B-P,S; C-Q,R; D-Q
3) Mg3 Al2O6 4) None of these 23) A-S ; B-P,R ; C-P,Q,R ; D-Q,R
36. Type of hole occupied by Al 3+ ions is 24) A → r ; B → s; C → p, D → q
1) Tetrahedral 2) Octahedral 25) A → r ; B → s; C → q, D → p
3) Both a and b 4) None of these
26) 2 27) 1 28) 4 29)4 30) 1 31) 1 32) 1
2+
37. Type of hole occupied by Mg ions is
33) 2 34) 1 35) 2 36) 2 37) 1 38) 3 39) 3
1) Tetrahedral 2) Octahedral
3) Both a and b 4) None of these
82 NARAYANAGROUP
LEVEL - IV - HINTS 9. Body diagonal of cube = 3 a
rMg+2 = 1.732 × 387 = 670.3 pm
66
1. radius ratio r = = 0.47 2(rc+ra) = a ⇒ 2(rc+ra) = 670.3
O2− 140
Hence Mg2+ occupies octahedral void 670.3
rc = - 181 = 154 pm
2. a = 200 pm = 2 x 10-8 cm 2
1
3 -24 2 10. no. of moles of Sr+2 added =10-3 ×
v = a = 8 x 10 cm 100
200x4 = 10-5 moles
mass of unit cell = = 33.3 x 10-23 g
24x1023 no. of Sr+2 ions added
= 6.023 × 1023 × 10-5 = 6.023 × 1018
m 33.3x10−23
density = = 41.6g / cc 11. For first order reflection, n = 1
v 8x10−24
λ = 2d Sin θ
3. body diagonal = 3xa
λ 154
= 3 x 286 = 495 pm d = 2 Sinθ = = 280 pm
2 × 0.2773
Atomic radius =
a
body diagonal 495 d(2, 0, 0) = ⇒ a = 2 × 280 = 560 pm
= = 124 pm 2 + 02 + 02
2
4 4
12. In fcc, no of atoms = 4
5. Face diagonal = 2a = 2 x 6 = 8.484
 4 3  16 3
Also face diagonal = 4r volume occupied atoms = 4  πr  = πr
3  3
8.484
4r = 8.484 A0 ⇒ r = = 2.121A 0 13. Per everyatom, there are two tetrahedral voids
4
formula = YX2(2/3) ie YX4/3 or X4 Y3
6. For every atom of A, there are one octahedral
hole and two tetrahedral holes 3a
30. Distance of closest approach in bcc =
2
a
7. For fcc structure, . r = 3x300
2 2 = = 260
2
∴ a = r × 2 2 = 125 × 2 2 = 354 pm
ZM dN0 a3
volume of unit cell = a3 = (354 × 10-12)3 m3 32. d= ⇒ M =
N0 a3 Z
= 4.436 × 10-23 cm3
1
No. of unit cells per cc =
4.436 × 10 −23
= 2.25 × 1022
rvoid
8. For octahedral void, r = 0.414
sphere
r
⇒ = 0.414 ⇒ r = 0.414 R
R
NARAYANAGROUP 83

Solid State: Synopsis

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Solid State: Synopsis

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JEE-MAIN-SR-CHEM-VOL-I SOLID STATE

Distinction between crystalline and amorphous solids

Different types of Solids

Covalent or Network Solids: Crystalline

Additional Information: X-Ray study of crystal structure-

Unit Cell: The smallest portion of the crystal

Ø The three cubic lattices : all sides of same

Ø A lattice point at the corner of a unit cell is shared

Close packed structures

Close paking of spheres in one dimension

Packing Fraction (Density of packing)

Body diagonal of cubic unit cell is 3a

percentage efficienty of body-centered unit cell

(or) 3 From ∆ABC , ,

cell : Consider a face-centred unit cell with edge 3

Ex : MnO2, V2O3, NiO etc.

19. A compound M p X q has cubic close packing π π π π

28. Which of the following is correct statement

a a 3 a a 3 LEVEL-II (C.W) - KEY

Cs + = 169, O 2− = 140, S 2− = 184, Cl − = 181 SrCl2 .The concentration of cation vacancies

29) 1 30) 1 31) 1

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