Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3

By D. A. Neamen Problem Solutions

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Chapter 3
3.1    E  
If a o were to increase, the bandgap energy   Eu  x  exp  j  kx    t  
would decrease and the material would begin       
to behave less like a semiconductor and more This equation may be written as
like a metal. If a o were to decrease, the
bandgap energy would increase and the u  x   2 u  x  2mE
material would begin to behave more like an  k 2 u  x   2 jk   2 u x   0
insulator.
x x 2 
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3.2 Setting u  x   u1  x  for region I, the

Schrodinger's wave equation is: equation
  2  2   x, t  becomes:
 V  x     x, t 
2m x 2
d 2 u1  x  du1  x 
 2 jk  
 k 2   2 u1  x   0
  x, t  dx 2 dx
 j where
t
Assume the solution is of the form: 2mE
2 
   E   2
  x, t   u  x  exp  j  kx    t   Q.E.D.
       In Region II, V  x   VO . Assume the
Region I: V  x   0 . Substituting the same
assumed solution into the wave equation, we form of the solution:
obtain:    E  
 2      E     x, t   u  x  exp  j  kx    t  
 jku  x  exp  j  kx    t         
2m x         Substituting into Schrodinger's wave
equation, we find:
u  x     E    
 exp  j  kx    t    2     E  
x           jk  2 u  x  exp j kx    t  
2m        

  jE     E   u  x     E  
 j    u  x  exp  j  kx    t    2 jk
x
exp  j  kx    t  
                
which becomes
2     E    2 u x     E   
  jk  2 u  x  exp j  kx    t    exp  j  kx    t   
2m         x 2
      

u  x     E      E  
 2 jk exp  j  kx    t    VO u  x  exp  j  kx    t  
x              

 2 u x     E     
 Eu  x  exp  j  kx  
 E  
 exp  j  kx    t     t  
x 2               
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
This equation can be written as:  2 jk  j    k  A exp j    k  x 
u  x   2 u  x   j    k  B exp  j    k  x
 k 2 u  x   2 jk 
x x 2  
 k 2   2  A exp j    k  x 
2mVO 2mE  B exp  j    k  x   0
 u x   u x   0 Combining terms, we obtain
2 2
Setting u  x   u 2  x  for region II, this   2
 
 2k  k 2  2k    k   k 2   2 
equation becomes
 A exp j    k  x 
d 2u 2  x du 2  x 
 2 jk
dx 2 dx   
   2  2k  k 2  2k    k   k 2   2  
 B exp  j    k  x   0
 2mV 
  k    2 O  u 2  x   0
2 2 We find that
   00 Q.E.D.
where again For the differential equation in u 2  x  and
2mE the
2  Q.E.D. proposed solution, the procedure is exactly
2
the same as above.
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3.4
We have the solutions
u1  x   A exp j    k  x 
3.3  B exp  j    k  x 
We have
for 0  x  a and
u 2  x   C exp j    k  x 
d 2 u1  x  du  x 

 2 jk 1  k 2   2 u1  x   0   D exp  j    k  x 
dx 2 dx
for b  x  0 .
Assume the solution is of the form:
u1  x   A exp j    k  x 
The first boundary condition is
u1  0   u 2  0 
 B exp  j    k  x 
The first derivative is
du1  x  which yields
 j    k  A exp j    k  x  A B C  D  0
dx
The second boundary condition is
 j    k  B exp  j    k  x  du1

du 2
and the second derivative becomes dx x  0 dx x  0
which yields
d 2 u1  x    k  A    k  B     k C
  j   k   A exp j    k  x 
2
2    kD  0
dx
The third boundary condition is
u1  a   u 2   b 
  j    k   B exp  j    k  x 
2
which yields
Substituting these equations into the
differential equation, we find
A exp j    k  a   B exp  j    k  a 
    k  A exp j    k  x 
2

 C exp j    k   b  
    k  B exp  j    k  x 
2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
3.7
 D exp  j    k   b   sin a
P  cos a  cos ka
and can be written as a
Let ka  y , a  x
A exp j    k  a   B exp  j    k  a  Then
 C exp  j    k  b  P
sin x
 cos x  cos y
x
 D exp j    k  b  0 Consider
d
of this function.
The fourth boundary condition is dy
du1

du 2 d
dy
 1
 
P    x  sin x  cos x   sin y
dx x  a dx x   b
which yields We find
j    k  A exp j    k  a 
 dx dx 
 j    k  B exp  j    k  a  P    1 x  sin x    x  cos x 
2 1

 dy dy 
 j    k  C exp j    k   b  
dx
 j    k  D exp  j    k   b    sin x
dy
  sin y

and can be written as Then

  k  A exp j   k  a
    k  B exp  j    k  a  dx   1 cos x  
 P  2 sin x    sin x    sin y
    k  C exp  j    k  b dy   x x  
    k  D exp j    k  b  0 For y  ka  n , n  0, 1, 2, ...
_______________________________________  sin y  0
So that, in general,
3.5 dx d a  d
(b) (i) First point: a   0 
dy d  ka  dk
Second point: By trial and error,
And
a  1.729
(ii) First point: a  2 2mE

Second point: By trial and error, 2
a  2.617 So
_______________________________________ 1 / 2
d 1  2mE   2m  dE
  2
  2 
dk 2      dk
This implies that
d dE n
0 for k 
dk dk a
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3.6
(b) (i) First point: a  
Second point: By trial and error,
a  1.515
(ii) First point: a  2 3.8
Second point: By trial and error, (a)  1 a  
a  2.375
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Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2 m o E1
a  
2

E1 
 2 2


   2 1.054 10 34  2 3.9
(a) At ka   ,  1 a  
2m o a 2 
2 9.11  10 31 4.2  10 10   2

2 m o E1
 3.4114  10 19 J a  
From Problem 3.5 2
 2 a  1.729
E1 
   2 1.054 10 34  2
2m o E 2
 a  1.729
 
2 9.11  10 31 4.2  10 10  2

2  3.4114  10 19 J

E2 
1.729  2 1.054  10 34  2 At ka  0 , By trial and error,
 o a  0.859
 
2 9.11  10  31 4.2  10 10  2

 1.0198  10 18 J
Eo 
 0.859  2 1.054  10 34  2
E  E 2  E1
 
2 9.11  10  31 4.2  10 10  2

 2.5172  10 19 J
 1.0198  10 18  3.4114  10 19
E  E 1  E o
 6.7868  10 19 J
6.7868  10 19
or E   4.24 eV  3.4114  10 19  2.5172  10 19
1.6  10 19  8.942  10 20 J
(b)  3 a  2
8.942  10 20
or E   0.559 eV
2m o E 3 1.6  10 19
 a  2
2 (b) At ka  2 ,  3 a  2

E3 
 2  2 1.054  10 34  2 2m o E 3
 a  2

2 9.11  10  31
 4.2 10 
10 2
2
 1.3646  10 18 J
E3 
 2  2 1.054  10 34  2
From Problem 3.5,
 4 a  2.617  
2 9.11  10  31 4.2  10 10  2

 1.3646  10 18 J
2m o E 4 At ka   . From Problem 3.5,
 a  2.617
2  2 a  1.729

E4 
 2.617  2 1.054  10 34  2 2m o E 2
 a  1.729

2 9.11  10  31
 4.2 10 
10 2
2
 2.3364  10 18 J
E2 
1.729  2 1.054  10 34  2
E  E 4  E 3
 
2 9.11  10  31 4.2  10 10  2

 2.3364  10 18  1.3646  10 18  1.0198  10 18 J

 9.718  10 19 J E  E 3  E 2
9.718  10 19
or E   6.07 eV  1.3646  10 18  1.0198  10 18
1.6  10 19
 3.4474  10 19 J
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Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
3.4474  10 19
or E 
1.6  10 19
 2.15 eV
E4 
 2.375  2 1.054  10 34  2
_______________________________________  
2 9.11  10  31 4.2  10 10  2

 1.9242  10 18 J
E  E 4  E 3

 1.9242  10 18  1.3646  10 18

 5.597  10 19 J
5.597  10 19
3.10 or E   3.50 eV
1.6  10 19
(a)  1 a   _____________________________________
2 m o E1
a  
2

E1 
   2 1.054 10 34  2
 
2 9.11  10 31 4.2  10 10  2

 3.4114  10 19 J
3.11
From Problem 3.6,  2 a  1.515 (a) At ka   ,  1 a  
2m o E 2 2m o E1
2
 a  1.515 a  
 2

E2 
1.515  2 1.054  10 34  2 E1 
   2 1.054 10 34  2
 
2 9.11  10  31 4.2  10 10  2
 
2 9.11  10 31 4.2  10 10  2

 7.830  10 19 J  3.4114  10 19 J

E  E 2  E1 At ka  0 , By trial and error,
 o a  0.727
19 19
 7.830  10  3.4114  10 2m o E o
 4.4186  10 19 J  a  0.727
19
2
4.4186  10
or E   2.76 eV
1.6  10 19
Eo 
 0.727  2 1.054  10 34  2
(b)  3 a  2
 
2 9.11  10  31 4.2  10 10  2

2m o E 3
2
 a  2  1.8030  10 19 J
 E  E1  E o

E3 
 2  2 1.054  10 34  2  3.4114  10 19  1.8030  10 19
 
2 9.11  10  31 4.2  10 10  2
 1.6084  10 19 J
or
 1.3646  10 18 J
1.6084  10 19
From Problem 3.6,  4 a  2.375 E   1.005 eV
1.6  10 19
2m o E 4 (b) At ka  2 ,  3 a  2
 a  2.375
2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2m o E 3 d 2E d 2E
 a  2  curve A    curve B 
2 dk 2 dk 2
so that m *  curve A  m *  curve B 

E3 
 2  2 1.054  10 
34 2 _______________________________________


2 9.11  10  31
 4.2 10  10 2
3.14
 1.3646  10 J 18 The effective mass for a hole is given by
1
At ka   , From Problem 3.6,  1 d 2E 
m  2 
* 
 2 a  1.515 p  
 dk 2 


2m o E 2 We have that
 a  1.515 d 2E 2
2 2
 curve A  d E2  curve B 
dk dk

E2 
1.515  2 1.054 10 34  2 so that m *p  curve A  m *p  curve B 


2 9.11  10  34 4.2  10 10   2 _______________________________________

 7.830  10 19 J 3.15

E  E 3  E 2 dE
Points A,B:  0  velocity in -x
dk
direction
 1.3646  10 18  7.830  10 19
dE
 5.816  10 19 J Points C,D:  0  velocity in +x
dk
5.816  10 19 direction
or E   3.635 eV
1.6  10 19 d 2E
_______________________________________ Points A,D: 0
dk 2
negative effective mass
d 2E
Points B,C: 0
dk 2
positive effective mass
3.12 _______________________________________
For T  100 K,

E g  1.170 
 4.73 10 100 4 2

3.16
636  100 For A: E  C i k 2
E g  1.164 eV At k  0.08  10 10 m 1 , E  0.05
T  200 K, E g  1.147 eV eV
Or
T  300 K, E g  1.125 eV
E g  1.097 eV
 
E   0.05 1.6  10 19  8  10 21 J
T  400 K,
T  500 K, E g  1.066 eV 
So 8  10 21  C1 0.08  1010  2

T  600 K, E g  1.032 eV  C1  1.25  10 38

_______________________________________
Now m 
2


1.054  10 34  2

3.13 2C1 2 1.25  10 38  

The effective mass is given by  4.44  10 31
kg
1
 1 d E 2
4.4437  10 31
m *   2  2 
 or m    mo
  dk  9.11  10  31
We have m   0.488 m o
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
For B: E  C i k 2 (a) (i) E  h
At k  0.08  10 10 m 1 , E  0.5 or   

E 1.42  1.6  10 19 
eV h 6.625  10 34
Or
 3.429  10 14 Hz

E   0.5 1.6  10 19  8  10 20 J  hc c 3  10 10
So 8  10 20

 C1 0.08  10 10
 2 (ii)    
E  3.429  10 14
 C1  1.25  10 37  8.75  10 5 cm  875 nm
2 1.054  10 34
   2
(b) (i)   

E 1.12  1.6  10 19 
Now m  
2C1 2 1.25  10  37   h 6.625  10 34
 4.44  10 32
kg  2.705  10 14 Hz
4.4437  10 32 c 3  10 10
or m  
 mo (ii)   
9.11  10  31  2.705  10 14
m   0.0488 m o  1.109  10 4 cm  1109
nm
_______________________________________
_______________________________________
3.17
3.19
For A: E  E  C 2 k 2 (c) Curve A: Effective mass is a constant
Curve B: Effective mass is positive
 
  0.025 1.6  10 19  C 2 0.08  10 10   2 around k  0 , and is negative

 C 2  6.25  10 39 around k   .
2
m 
  2  1.054  10 34


  2
_______________________________________
2C 2 2 6.25  10 39   3.20
E  E O  E1 cos  k  k O  
31
 8.8873  10 kg
 8.8873  10 31 Then
or m    mo
9.11  10  31 dE
   E1     sin  k  k O  
m     0.976 m o dk
For B: E  E  C 2 k 2   E1 sin  k  k O  
and

  0.3 1.6  10 19
  C  0.08 10  2
10 2
d 2E
 E1 2 cos  k  k O  
2
 C 2  7.5  10 38 dk

m 

  2  1.054  10 34

 2

2C 2 2 7.5  10 38 
32
 7.406  10 kg Then
 7.406  10

32
1 1 d 2E E1 2
or m   mo   
9.11  10  31 m *  2 dk 2 k  ko 2

m  0.0813 m o or
_______________________________________ 2
m* 
3.18 E1 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
_______________________________________ 2 X  2Y 2Z
YZ  XZ  XY
3.21
x 2 y 2 z 2

(a) 
m dn 
 4 2 / 3  mt  ml
2
 1/ 3


2mE
 XYZ  0

 
2
 4 2 / 3  0.082m o  1.64m o 
2 1/ 3
Dividing by XYZ , we obtain

m dn  0.56m o
1  2 X 1  2 Y 1  2 Z 2mE
(b)       2 0
3 2 1 2 1 X x 2 Y y 2 Z z 2 

    Let
m cn
m t ml 0.082m o 1.64m o
1 2 X 2 X

24.39 0.6098

 2  k x2   k x2 X  0
mo mo X x x 2

The solution is of the form:

X  x   A sin k x x  B cos k x x

m cn  0.12m o
_______________________________________
Since   x, y , z   0 at x  0 , then
3.22 X  0  0

(a) m dp   m hh   3/ 2
  m lh  
3/2 2/3 so that B  0 .
Also,   x, y , z   0 at x  a , so that
X  a   0 . Then k x a  n x  where

  0.45m o 
3/ 2
  0.082m o 
3/ 2 2/3
 n x  1, 2, 3, ...
  0.30187  0.02348
2/3
 mo Similarly, we have
m 
 0.473m o 1  2Y 1 2Z
dp    k y2 and  2  k z2
Y y 2
Z z
  m hh  3 / 2   mlh  3 / 2
(b) m  From the boundary conditions, we find
cp
 m hh  1 / 2   mlh  1 / 2 k y a  n y  and k z a  n z 
where

 0.45 3 / 2   0.082 3 / 2  mo n y  1, 2, 3, ... and
 0.45 1 / 2   0.082 1 / 2

n z  1, 2, 3, ...
m cp  0.34m o
From the wave equation, we can write
_______________________________________
2mE
 k x2  k y2  k z2  0
3.23 2
For the 3-dimensional infinite potential well, The energy can be written as
V  x   0 when 0  x  a , 0  y  a , and 2

0  z  a . In this region, the wave equation

2
E  E nx n y nz 
2m

n x2  n 2y  n z2  
 

 a
is: _______________________________________

 2  x, y, z   2  x, y, z   2  x, y, z  3.24
 
x 2
y 2
z 2 The total number of quantum states in the
3-dimensional potential well is given
2mE
   x, y , z   0 (in k-space) by
2  k 2 dk 3
Use separation of variables technique, so let g T  k  dk  a
3
  x, y , z   X  x Y  y  Z  z 
where
Substituting into the wave equation, we have
2mE
k2 
2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
We can then write 
2a 1 2m n
2mE g T  E  dE     dE
k  2 E
 Divide by the "volume" a, so
Taking the differential, we obtain
1 2m n
g E  
 E

1 1 1 1 m
dk   2m    dE    dE
 2 E  2 E
Substituting these expressions into the density
of states function, we have
a 3
 2mE  1 m
g T  E  dE  3      dE So
  
2
    2E 1 2 0.067  9.11  10 31
g E  
Noting that
h

1.054  10  34     E
 1.055  10 18
2 g E  m 3 J 1
this density of states function can be E
simplified and written as _______________________________________
4 a 3
g T  E  dE  3
 2m  3 / 2  E  dE 3.26
h
(a) Silicon, m n  1.08m o
Dividing by a 3 will yield the density of
states so that
gc  E 
4 2m n   3/ 2

E  Ec
4  2m 
3/ 2
g E   E h3
h3
_______________________________________ 4 2m n   3 / 2 E c  2 kT

3.25
gc 
h3 
Ec
E  E c  dE

For a one-dimensional infinite potential well,

2m n E
2

n 2 2
2
 k2 

4 2m n  3/2
2
   E  Ec 
3/ 2
E c  2 kT

 a h3 3 Ec
Distance between quantum states

k n 1  k n   n  1 
 
   n
 
 


4 2m  n
 3/ 2
2
   2kT 
3/ 2
3
 a   a  a h 3
Now

g T  k  dk 
2  dk


4 21.08 9.11  10 31   3/ 2


2
  2kT 
3/ 2
 

 a
 6.625 10   34 3 3

Now 
 7.953  10 55  2kT   3/ 2

1 (i) At T  300 K, kT  0.0259 eV

k  2m n E


  0.0259  1.6  10 19  
1 1 2m n
dk     dE  4.144  10 21 J
 2 E Then
Then

g c  7.953  10 55 2 4.144  10 21    3/ 2

3
 6.0  10 25 m
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
or g c  6.0  10 19 cm 3

(ii) At T  400 K, 
4 2m p  3/ 2
 2 E
  E  E 
3/ 2
 
 400  h 3
 3 
kT   0.0259   
E  3 kT

 300 
4 2m 
 3/ 2
 2
 
   3kT 
p
 0.034533 eV  3

3/ 2

h  3 
  0.034533 1.6  10 19  
 5.5253  10 21 J 

4 2 0.56  9.11  10 31   3/2
 2
   3kT 
3/ 2

Then  6.625 10   34 3

 3

 2.969  10 55  3kT  
   
3/ 2
3/ 2
g c  7.953  10 55 2 5.5253  10 21
(i)At T  300 K, kT  4.144  10 21 J
3
 9.239  10 25 m
or g c  9.24  10 19 cm

3

g   2.969  10 55 3 4.144  10 21    3/ 2

(b) GaAs, m  0.067 m o 3

n
 4.116  10 25 m
or g   4.12  10 19 cm
  
3

4 2 0.067  9.11  10 31

3/ 2
2
   2kT  (ii)At T  400 K, kT  5.5253  10 21
3/ 2
gc 
6.625 10   34 3 3 J

 1.2288  10 54  2kT   3/ 2


g   2.969  10 55 3 5.5253  10 21    3/ 2

3
 6.337  10 25 m
(i) At T  300 K, kT  4.144  10 21 J
or g   6.34  10 19 cm 3


g c  1.2288  10 54 2 4.144  10 21    3/ 2 (b) GaAs, m p  0.48m o

 9.272  10 23 m 3
g 

4 2 0.48 9.11  10 31   3/ 2
 2
   3kT 
3/ 2

or g c  9.27  1017 cm 3  6.625 10   34 3

 3
(ii) At T  400 K, 
 2.3564  10 55  3kT   3/ 2

kT  5.5253  10 21 J


g c  1.2288  10 54 2 5.5253  10 21    3/ 2

3
 1.427  10 24 m
g c  1.43  1018 cm 3 (i)At T  300 K, kT  4.144  10 21 J
_______________________________________

g   2.3564  10 55 3 4.144  10  21    3/2

3.27 3
 3.266  10 25 m
(a) Silicon, m p  0.56m o
or g   3.27  10 19 cm 3

g  E  
4 2m  3/ 2
p  E  E (ii)At T  400 K,
3
h kT  5.5253  10 21 J

4 2m p   3/ 2 E

g   2.3564  10 55 3 5.5253  10 21    3/ 2
g 
h3 
E  3 kT
E  E  dE
 5.029  10 25 m 3

or g   5.03  10 19 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
_______________________________________
3.28

(a) g c  E  
4 2m n
3/ 2

E  E
  3.30
Plot
3 c
h _______________________________________



4 21.08 9.11  10 31   3/ 2

E  Ec
3.31
gi! 10!
 6.625 10   34 3 (a) Wi  
N i !  g i  N i !  7!10  7 !
 1.1929  10 56 E  Ec
For E  E c ; gc  0

10 9 8 7! 
10 9 8  120
E  E c  0.1 eV; g c  1.509  10 46 m  7! 3!  3 21
3 1 (b) (i)
J
E  E c  0.2 eV; Wi 
12!

121110!
 2.134  10 46
3 1
10!12  10! 10! 21
m J
 66
E  E c  0.3 eV;  2.614  10 46 (ii)
m 3 J 1
Wi 
12!

12 1110  9 8!
E  E c  0.4 eV;  3.018  10 46
 8!12  8!  8! 4  3 21
m 3 J 1
 495

(b) g 

4 2m p  3/ 2

E  E
_______________________________________

h3 3.32
1
f  E 


4 2 0.56  9.11  10  31
 3/ 2

E  E 1  exp
 E  EF 

6.625 10   34 3  kT 
1
 4.4541 10 55 E  E (a) E  E F  kT , f  E   
1  exp1
For E  E ; g  0
f  E   0.269
E  E  0.1 eV; g   5.634  10 45 m
(b) E  E F  5kT ,
3 J 1
1
E  E  0.2 eV; f  E  
 7.968  10 45 1  exp 5
f  E   6.69  10 3
m 3 J 1

E  E  0.3 eV;  9.758  10 45 (c) E  E F  10kT ,

m 3 J 1
1
f  E  
E  E  0.4 eV;  1.127  10 46 1  exp10 
m 3 J 1 f  E   4.54  10 5
_______________________________________ _______________________________________
3.29 3.33

(a)
gc

m   3/ 2
n

 1.08 

3/ 2

 2.68 1 f  E  1
1
g mp   3/ 2
 0.56 
1  exp
 E  EF 

(b)  kT 
gc

m  
 3/ 2
n

 0.067 

3/2

 0.0521
or

g mp  
 3/2
 0.48 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1   0.25 
1 f  E  E  E ; 1  f F  exp  
 EF  E   0.0259 
1  exp 
 kT   6.43  10 5
(a) E F  E  kT ,  f  E   0.269
1 E 
kT
;
(b) E F  E  5kT , 1  f  E   6.69  10 3 2
   0.25  0.0259 2  
(c) E F  E  10kT , 1  f F  exp  
 0.0259 
1  f  E   4.54  10 5
_______________________________________  3.90  10 5
E  kT ;
   0.25  0.0259 
1  f F  exp  
3.34  0.0259 
   E  EF    2.36  10 5
(a) f F  exp  
 kT  3kT
E  Ec ; E  ;
2
  0.30  6
f F  exp    9.32  10
 0.0259     0.25  3 0.0259 2  
1  f F  exp  
kT  0.0259 
Ec  ;
2  1.43  10 5
   0.30  0.0259 2  E  2kT ;
f F  exp  
 0.0259 
 5.66  10 6
   0.25  2 0.0259   
1  f F  exp  
E c  kT ;  0.0259 
   0.30  0.0259    8.70  10 6
f F  exp  
 0.0259  _______________________________________
 3.43  10 6
3kT
Ec  ;
2 3.35
   0.30  3 0.0259 2       E  EF      E c  kT  E F  
f F  exp   f F  exp    exp  
 0.0259   kT   kT 
 2.08  10 6 and
E c  2kT ;    EF  E 
1  f F  exp  
   0.30  2 0.0259    kT 
f F  exp  
 0.0259 
 1.26  10 6    E F   E  kT   
 exp  
1  kT 
1 f F  1
(b)
1  exp 
 E  EF     E c  kT  E F  
So exp 
 kT  kT 
 
   EF  E 
 exp 
 kT 
    E F  E  kT  
 exp  
 kT 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
Then E c  kT  E F  E F  E  kT E F  2.35 eV
E c  E (b) For 13 electrons, the 13th electron
Or E F   E midgap occupies the quantum state
2 n x  3, n y  2, n z  3 ; so
_______________________________________

3.36
E13 
1.054 10    3  2  3 
34 2 2 2 2 2

 n  29.11  10 12  10 
2 2 2
 31 10 2
En 
2ma 2  9.194  10 19 J
For n  6 , Filled state
9.194  10 19
E6 
1.054 10   6    34 2 2 2 or E13 
1.6  10 19
 5.746 eV
2 9.11  10 12  10   31 10 2
The 14th electron would occupy the quantum
 1.5044  10 18 J state n x  2, n y  3, n z  3 . This state is
at the same energy, so
1.5044  10 18
or E 6   9.40 eV E F  5.746 eV
1.6  10 19
_______________________________________
For n  7 , Empty state

E7 
1.054 10   7    34 2 2 2
3.38

2 9.11  10 12  10   31 10 2 The probability of a state at E1  E F  E

being occupied is
 2.048  10 18 J
2.048  10 18 1 1
or E7   12.8 eV f 1  E1   
1.6  10 19  E1  E F  E 

1  exp 1  exp  
Therefore 9.40  E F  12.8 eV  kT  kT 
_______________________________________ The probability of a state at E 2  E F  E
3.37 being empty is
1
(a) For a 3-D infinite potential well 1 f 2  E2   1
2
 E  EF 
2mE

 n x2  n 2y  n z2 
 
  1  exp 2
kT

 2
 a  
For 5 electrons, the 5th electron occupies
the quantum state n x  2, n y  2, n z  1 ;   E 
exp 
so 1  kT 
2  1 
E5 
2 2
2m

n x  n 2y  n z2 
 
  1  exp
  E 
 1  exp
  E 

 a  kT   kT 
or
1
1 f 2  E2  


1.054 10     2  2  1 
34 2 2 2 2 2
1  exp
 E 
 kT 

2 9.11  10 12  10   31 10 2
 
so f 1 E1  1  f 2 E 2  
Q.E.D.
 3.761  10 19 J _______________________________________
3.761 10 19
or E5   2.35 eV
1.6  10 19
3.39
For the next quantum state, which is empty,
(a) At energy E1 , we want
the quantum state is n x  1, n y  2, n z  2 .
This quantum state is at the same energy, so
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
  0.25 
1 1 0.02  exp  
  kT 
 E  EF   E1  E F 
exp 1  1  exp 
 kT   kT 
 0.01
1
 E1  E F    0.25  1
1  exp  or exp 
kT   0.02  50
 kT   
0.25
This expression can be written as  ln  50 
 E  EF  kT
1  exp 1 
kT 
or

 1  0.01
 E1  E F  0.25  T 
exp  kT   0.063906   0.0259   
 kT  ln  50   300 
or which yields T  740 K
 E  EF  _______________________________________
1   0.01 exp 1 
 kT  3.41
Then (a)
E1  E F  kT ln 100 
1
or f  E   0.00304
E1  E F  4.6kT  .15  7.0 
7
1  exp 
(b)  0.0259 
At E  E F  4.6kT , or 0.304%
(b) At T  1000 K, kT  0.08633 eV
1 1 Then
f  E1   
 E  EF  1  exp 4.6 
1  exp 1  f  E 
1
 0.1496
 kT 
 7.15  7.0 
which yields 1  exp 
 0.08633 
f  E1   0.00990  0.01 or 14.96%
_______________________________________ (c)
1
3.40 f  E   0.997
(a)  6.85  7.0 
1  exp 
 0.0259 
   E  EF      5.80  5.50  or 99.7%
f F  exp    exp   (d)
 kT   0.0259  1
At E  E F , f  E   for all
 9.32  10 6 2
 700  temperatures
(b) kT   0.0259     0.060433 _______________________________________
 300 
eV
3.42
(a) For E  E1
  0.30  3
f F  exp    6.98  10
 0.060433 
   EF  E 
(c) 1  f F  exp  
 kT 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1    E1  E F   f  E   9.32  10 6
f  E   exp   At E  E 2 ,
 E1  E F   kT 
1  exp  E F  E 2  1.42  0.3  1.12 eV
 kT  So
Then
   EF  E2  
f  E1   exp
  0.30 
  9.32  10
6 1  f  E   exp  
 0.0259   kT 
For E  E 2 ,
  1.12 
E F  E 2  1.12  0.30  0.82 eV  exp 
Then  0.0259 
or
1
1 f  E  1 1  f  E   1.66  10 19
  0.82 
1  exp  (b) For E F  E 2  0.4 ,
 0.0259 
or
E1  E F  1.02
eV
At E  E1 ,


1  f  E   1   1  exp
  0.82      E1  E F     1.02 
  f  E   exp    exp 
  0.0259    kT   0.0259 
  0.82  14 or
 exp   1.78  10
 0.0259  f  E   7.88  10 18
(b) For E F  E 2  0.4 eV, At E  E 2 ,
E1  E F  0.72 eV
At E  E1 ,
   EF  E2  
1  f  E   exp  
   E1  E F     0.72   kT 
f  E   exp    exp 
 kT   0.0259    0.4 
 exp 
or  0.0259 
f  E   8.45  10 13 or 1  f  E   1.96  10 7
At E  E 2 , _______________________________________

   EF  E2  
1  f  E   exp  
3.44
1
 kT    E  EF  
f  E    1  exp  
  0.4   kT  
 exp  
 0.0259  so
or
df  E 
2
  E  EF  
1  f  E   1.96  10 7    1  1  exp  
_______________________________________ dE   kT  
 1   E  EF 
3.43   exp 
(a) At E  E1  kT   kT 
or
   E1  E F     0.30 
f  E   exp    exp 
 kT   0.0259 
or
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
 1   E  EF 
  exp  1 1
df  E   kT   kT  f  E  
  E  EF   Eg 
dE 2 1  exp  1  exp 
  E  EF   kT  
 1  exp    2kT 
  kT  Si: E g  1.12 eV,
(a) At T  0 K, For 1
df f  E 
E  E F  exp     0  0 1  exp 
 1.12 

 2 0.0259  
dE
df
E  E F  exp       0 or
dE
f  E   4.07  10 10
df
At E  E F   
dE
(b) At T  300 K, kT  0.0259 eV Ge: E g  0.66 eV
df
For E  E F , 0 f  E 
1
dE
 0.66 
df 1  exp  
For E  E F ,
dE
0  2 0.0259  
or
At E  E F ,
f  E   2.93  10 6
1 

  1 GaAs: E g  1.42 eV
df  0.0259 
  9.65 1
dE 1  1 2 f  E 
 1.42 
1  exp 
 .0259  
(eV) 1
 2 0
or
f  E   1.24  10 12
(b) Using the results of Problem 3.38, the
answers to part (b) are exactly the same as
those given in part (a).
_______________________________________

(c) At T  500 K, kT  0.04317 eV

df
For E  E F , 0
dE 3.46
   E  EF  
df
For E  E F , 0
dE (a) f F  exp  
 kT 
At E  E F ,
1    0.60 
 10 8  exp 
  1  kT 

df  0.04317  (eV)
  5.79
dE 1  1 2
or
0.60
kT

 ln 10  8 
1
0.60
kT   0.032572 eV
_______________________________________

ln 10 8 
3.45  T 
0.032572   0.0259   
(a) At E  E midgap ,  300 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 3
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
so T  377 K
6   0.60 
(b) 10  exp  
 kT 
0.60
kT

 ln 10  6 
0.60
kT   0.043429

ln 10 6 
 T 
0.043429   0.0259   
 300 
or T  503 K
_______________________________________

3.47
(a) At T  200 K,

 200 
kT   0.0259     0.017267 eV
 300 
1
f F  0.05 
 E  EF 
1  exp 
 kT 
 E  EF  1
exp    1  19
 kT  0.05

E  E F  kT ln 19   0.017267  ln 19

 0.05084 eV
By symmetry, for f F  0.95 ,
E  E F  0.05084 eV
Then E  2 0.05084   0.1017 eV
(b) T  400 K, kT  0.034533 eV
For f F  0.05 , from part (a),

E  E F  kT ln 19    0.034533 ln 19

 0.10168 eV
Then E  2 0.10168  0.2034 eV
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