IPB042N10N3 G IPI045N10N3 G

IPP045N10N3 G

OptiMOS™3 Power-Transistor
Product Summary
Features
VDS 100 V
• N-channel, normal level
RDS(on),max (TO 263) 4.2 mW
• Excellent gate charge x R DS(on) product (FOM)
ID 100 A
• Very low on-resistance R DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1) for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Type IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G

Package PG-TO263-3 PG-TO262-3 PG-TO220-3

Marking 042N10N 045N10N 045N10N

Maximum ratings, at T A=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 °C2) 100 A

T C=100 °C 100

Pulsed drain current2) I D,pulse T C=25 °C 400

Avalanche energy, single pulse E AS I D=100 A, R GS=25 W 340 mJ

Gate source voltage V GS ±20 V

Power dissipation P tot T C=25 °C 214 W

Operating and storage temperature T j, T stg -55 ... 175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

1)
J-STD20 and JESD22
2)
See figure 3

Rev. 2.8 page 1 2016-08-17

 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 0.7 K/W

Thermal resistance, R thJA minimal footprint - - 62

junction - ambient 6 cm2 cooling area3) - - 50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=150 µA 2 2.7 3.5

V DS=100 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 µA
T j=25 °C

V DS=100 V, V GS=0 V,
- 10 100
T j=125 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA

V GS=10 V, I D=100 A,
Drain-source on-state resistance R DS(on) - 3.9 4.5 mW
TO 220, TO 262

V GS=10 V, I D=50 A,
- 3.6 4.2
TO263

V GS=6 V, I D=50 A, TO
- 4.7 7.7
220, TO 262

V GS=6 V, I D=50 A,
- 4.4 7.4
TO263

Gate resistance RG - 1.4 - W

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 73 145 - S
I D=100 A

3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.

Rev. 2.8 page 2 2016-08-17

 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 6320 8410 pF

V GS=0 V, V DS=50 V,
Output capacitance C oss - 1210 1610
f =1 MHz
Reverse transfer capacitance C rss - 41 -

Turn-on delay time t d(on) - 27 - ns

Rise time tr V DD=50 V, V GS=10 V, - 59 -

Turn-off delay time t d(off) I D=50 A, R G,ext=1.6 W - 48 -

Fall time tf - 14 -

Gate Charge Characteristics4)

Gate to source charge Q gs - 30 39 nC

Gate to drain charge Q gd - 16 -

V DD=50 V, I D=100 A,
Switching charge Q sw - 27 -
V GS=0 to 10 V
Gate charge total Qg - 88 117

Gate plateau voltage V plateau - 4.7 - V

Output charge Q oss V DD=50 V, V GS=0 V - 122 162 nC

Reverse Diode

Diode continous forward current IS - - 100 A

T C=25 °C
Diode pulse current I S,pulse - - 400

V GS=0 V, I F=100 A,
Diode forward voltage V SD - 1.0 1.2 V
T j=25 °C

Reverse recovery time t rr V R=50 V, I F=I S, - 68 - ns

Q rr di F/dt =100 A/µs

Reverse recovery charge - 135 - nC

4)
See figure 16 for gate charge parameter definition

Rev. 2.8 page 3 2016-08-17

 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V

250 120

100
200

80
150
Ptot [W]

ID [A]
60

100
40

50
20

0 0
0 50 100 150 200 0 50 100 150 200

TC [°C] TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 limited by on-state

100
resistance 1 µs

0.5
10 µs

100 µs
102 0.2

10-1 0.1
1 ms
ZthJC [K/W]

0.05
ID [A]

101
0.02
10 ms

0.01
DC
10-2

100

single pulse

10-1 10-3
10-1 100 101 102 103 10-6 10-5 10-4 10-3 10-2 10-1 100

VDS [V] tp [s]

Rev. 2.8 page 4 2016-08-17

 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

400 9
10 V

7.5 V
6V 4.5 V
320

5V
6
240

RDS(on) [mW]
5.5 V 6V
ID [A]

7.5 V

10 V
160
5V 3

80
4.5 V

0 0
0 1 2 3 4 5 0 50 100 150

VDS [V] ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j

200 200

160
150

120
gfs [S]
ID [A]

100

80

25 °C
50
40
175 °C

0 0
0 2 4 6 8 0 50 100 150

VGS [V] ID [A]

Rev. 2.8 page 5 2016-08-17

 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS
parameter: I D

10 4

3.5

8
3
1500 µA

2.5
6
RDS(on) [mW]

150 µA

VGS(th) [V]
98 %

2
typ

4
1.5

1
2

0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180

Tj [°C] Tj [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

104 103
Ciss

Coss
25 °C 175 °C, 98%

175 °C
103 102

25 °C, 98%
C [pF]

IF [A]

102 101
Crss

101 100
0 20 40 60 80 0 0.5 1 1.5 2

VDS [V] VSD [V]

Rev. 2.8 page 6 2016-08-17

 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=100 A pulsed
parameter: T j(start) parameter: V DD

1000 10

100 50 V
25 °C
6
20 V 80 V

VGS [V]
IAS [A]

100 °C

4
150 °C
10

1 0
1 10 100 1000 0 20 40 60 80 100

tAV [µs] Qgate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

110
V GS

Qg

105
VBR(DSS) [V]

100

V gs(th)

95

Q g(th) Q sw Q gate

Q gs Q gd
90
-60 -20 20 60 100 140 180

Tj [°C]

Rev. 2.8 page 7 2016-08-17

 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

PG-TO220-3: Outline

Rev. 2.8 page 8 2016-08-17

 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

PG-TO262-3

Rev. 2.8 page 9 2016-08-17

 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

PG-TO-263 (D²-Pak)

Rev. 2.8 page 10 2016-08-17

100VOptiMOSª3PowerTransistor
IPB042_IPP_IPI_045N10N3G

RevisionHistory
IPB042_IPP_IPI_045N10N3 G

Revision:2016-08-23,Rev.2.8
Previous Revision
Revision Date Subjects (major changes since last revision)
2.8 2016-08-23 Inclusion "x" axes values in diagram 4

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11 Rev.2.8,2016-08-23