New Products MB85R256H

High-Speed 256K-bit Parallel

Interface FRAM
MB85R256H
A 2T2C-type nonvolatile memory realizing lower voltage operation, higher speed
writing/reading, and higher reliability as the high-performance version of the
conventional product MB85R256.

Overview Figure 1 Pin Assignments

SOP28
This product is a 32,768-word×8-bit FRAM (Ferroelectric
Random Access M emory) that applies ferroelectric￣ and silicon A14 1 28 Vcc
￣ CMOS
gate ￣ processes
￣ to form a nonvolatile memory cell. It is A12 2 27 WE
capable of writing/reading 1010 times-this dramatically exceeds A7 3 26 A13
A6 4 25 A8
the rewrite counts of 105 times for Flash memory and E2PROM.
A5 5 24 A9
It also delivers high-speed writing and does not require a writing A4 6 23 A11
completion wait sequence. As such, it is possible to put the A3 7 22 OE
advantages of FRAM to full use in applications to write and A2 8 21 A10
record the final status at system power off in a short period or to A1 9 20 CE
A0 10 19 I/O7
reduce the processing time required to rewrite adjustment data at
I/O0 11 18 I/O6
the time of system shipment. I/O1 12 17 I/O5
I/O2 13 16 I/O4
GND 14 15 I/O3
Photo 1 External View

TSOP28

OE 22 21 A10
A11 23 20 CE
A9 24 19 I/O7
A8 25 18 I/O6
A13 26 17 I/O5
WE 27 16 I/O4
VCC 28 15 I/O3
A14 1 14 GND
A12 2 13 I/O2
A7 3 12 I/O1
A6 4 11 I/O0
A5 5 10 A0
A4 6 9 A1
A3 7 8 A2

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 New Products MB85R256H

Since this product is capable of low-voltage operation and
has a short write time, the power required for 1 write (power
consumption×write time) is dramatically less than that of the
equivalent E2PROM product.
Furthermore, this product adopts a pseudo SRAM interface
that conforms to the conventional asynchronous SRAM. It realizes
operation at lower voltage and faster writing/reading compared
to the conventional product MB85R256 by rationalizing the
circuit and reviewing the materials. This enables application in
products requiring higher performance and reliability than our
conventional products.
Product Features
■ Main specifications
●Bit configuration: 32,768×8-bit
● Operation power supply voltage: 2.7V to 3.6V
● Read access time: 70ns
● Read/write cycle time: 150ns
● Package: SOP28, TSOP28
● Operation temperature range: −40℃ to ＋85℃
Fig.1 presents the pin assignments.
■ High-speed read/write
FRAM has equivalent read and write time despite being a
nonvolatile memory; in addition, it requires no special sequence
for writing. Since it can be used like an SRAM, it is adopted in a
wide range of fields, including as a substitute for battery-backup
SRAM. Furthermore, FRAM has a short write time and therefore,
immediately after one write operation, it is possible to execute a
read operation or another write operation. This requires no
polling sequence in ms order like Flash memory and E2PROM
do. It also enables frequent writing without losing the

Table 1 Main Features (in comparison to the conventional product)

Type MB85R256 (conventional product) MB85R256H

Read cycle time tRC 235ns 150ns

Write cycle time tWC 235ns 150ns

CEB access time tCE 150ns 70ns

Precharge time tPC 85ns 80ns

Recommended operating voltage VCC 3.0V to 3.6V 2.7V to 3.6V

Operating temperature range TA −40℃ to 85℃ −40℃ to 85℃

Operating current ICC 1.0mA/1MHz 1.0mA/1MHz

Figure 2 Block Diagram

A10-A14
Block decoder

A0-A14
Address A0-A7 FRAM array
Raw decoder
latch 32,768×8

CE
A8-A9
Column decoder

Pseudo
WE SRAM I/F
logic circuit Control logic

I/O latch bus driver I/O0-I/O7

OE

2006 No.3 FIND Vol.24 2

 New Products MB85R256H

opportunity for the next writing due to polling. of operating with extremely low power consumption. This
makes it applicable for use in mobile products operating on dry
■ Power saving batteries.
Since this product has a short write time, the power required Table 1 presents the main features and Fig.2 the block diagram
for 1 write (power consumption×write time) is dramatically less of this product.
than that of the equivalent E2PROM product. As such, it can be
operated with extremely low power consumption in applications
involving low writing frequencies such as game machines, Functions
measuring devices, copy machines, and printers. In addition,
this product has a power supply voltage of 2.7V and is capable This product basically operates by clocking ￣
CE in a similar

Figure 3 Read Operation Timing

■Read cycle (CE control)

：Don't care

tRC
tPC tPC
tCA
CE
tAH tAH
tAS tAS
A0-14 Valid Valid
tRC
tPC tPC
OE tRP

tOE tOHZ
High-Z High-Z
IO0-7 Valid Valid

tCE tHZ

WE
“H”level

■Read cycle (OE control)

：Don't care

tRC
tPC tPC
tCA
CE
tAH tAH
tAS tAS
A0-14 Valid Valid
tRC
tPC tPC
OE tRP

tOE tOHZ
High-Z High-Z
IO0-7 Valid Valid

tCE tHZ

WE “H”level

2006 No.3 FIND Vol.24 3

 New Products MB85R256H

fashion to DRAM, etc. However, OE ￣ control and W ￣ E control
functions as pseudo SRAM mode are available for external
control, and it can easily work as a replacement for SRAM, etc.
The packages available for this product are SOP28 and
TSOP28.
Fig.3 shows the read operation timing, Fig.4 the write
operation timing, and Table 2 the functions of this product.
Application Examples
Since FRAM is capable of high-speed writing, it is possible to
quickly store various parameters, user setting data, log data, etc.
in a short period when shutting down the power supply to
various office devices, automotive audio products, mobile devices,
and so on. No special sequence for data polling, etc. is necessary
for this process in FRAM, and thus backup can be obtained with
simple instructions, similar to SRAM. Furthermore, since FRAM
is nonvolatile, the stored data can be recorded and maintained
without having to ensure the backup battery power supply as
needs to be done in SRAM.
FRAM allows a rewrite count of 1010 times, which is higher
than E2PROM by several orders of magnitude. Thus, storage of
various parameters, logs, etc. can be executed without concern

Figure 4 Write Operation Timing

■Write cycle (CE control)

：Don't care

tWC
tPC tPC
tCA
CE

tAS tAH tAS tAH

A0-14 Valid Valid
tPC tWC tPC
tWH tWS tWH tWS
WE tWP

tDS tDH tDS tDH

Data In Valid Valid

OE “H”level

■Write cycle (WE control)

：Don't care

tWC
tPC tPC
tCA
CE

tAS tAH tAS tAH

A0-14 Valid Valid
tPC tWC tPC
tWH tWS tWH tWS
WE tWP

tDS tDH tDS tDH

Data In Valid Valid

OE “H”level

2006 No.3 FIND Vol.24 4

 New Products MB85R256H

regarding the rewrite count limitation at each event in office Future Development
devices and similar equipment (rewrite every 32ms is possible for
,
10 years). As described above, despite being nonvolatile, FRAM shows the development roadmap for FUJITSU s FRAM
Fig.5
is capable of high-speed operation equivalent to that of volatile Standalone Memory.
memories such as SRAM. This enables things that were As the leading FRAM products company, we will continue to
impossible to realize with SRAM, E2PROM, Flash memory, etc. promote further capacity increase and speedup and devote our
This product has an improved high-speed FRAM writing efforts to developing higher performance FRAM memory
function compared to our conventional product MB85R256 and products. ✱
will contribute to the performance improvement of our
,
customers products.

Table 2 Table of Functions

Operating mode CE WE OE I/Ｏ0 to I/O7 Power supply current

H × × Standby
Standby precharge High impedance
× L L （ISB）

Latch address L ── ──

Write L L H Data input

Read L H L Data output Operation（ICC）

Disable output × H H High impedance

H: high level, L: low level, X: Regardless of“H”or“L”

Figure 5 Development Roadmap for FRAM Standalone Memory

In mass production
Serial TBD
1M-bit SPI
In development
MB85RS256
In examination 256K-bit SPI

TBD
Parallel
16M-bit
MB85R4001/2
4M-bit
MB85R1001（×8）
MB85R1002（×16）
1M-bit This product
MB85R256 MB85R256H
256K-bit 256K-bit high-speed product
CY
2002 2003 2004 2005 2006 2007 2008 2009

2006 No.3 FIND Vol.24 5