DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3793
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION ORDERING INFORMATION

The 2SK3793 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE
designed for high current switching applications. 2SK3793 Isolated TO-220

FEATURES
• Super low on-state resistance
(Isolated TO-220)
RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A)
RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A)
• Low C iss: C iss = 900 pF TYP.
• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 100 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±12 A
Note1
Drain Current (pulse) ID(pulse) ±22 A
Total Power Dissipation (TC = 25°C) PT1 20 W
Total Power Dissipation (TA = 25°C) PT2 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Note2
Single Avalanche Current IAS 10 A
Note2
Single Avalanche Energy EAS 10 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D16777EJ1V0DS00 (1st edition)

Date Published March 2004 NS CP(K)
Printed in Japan
2004
 2SK3793

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 µA

Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Note
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 6 A 5.0 10.3 S
Note
Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 6 A 89 125 mΩ

RDS(on)2 VGS = 4.5 V, ID = 6 A 96 148 mΩ

Input Capacitance Ciss VDS = 10 V 900 pF

Output Capacitance Coss VGS = 0 V 110 pF

Reverse Transfer Capacitance Crss f = 1 MHz 50 pF

Turn-on Delay Time td(on) VDD = 50 V, ID = 6 A 9 ns

Rise Time tr VGS = 10 V 5 ns

Turn-off Delay Time td(off) RG = 0 Ω 30 ns

Fall Time tf 4 ns

Total Gate Charge QG VDD = 80 V 21 nC

Gate to Source Charge QGS VGS = 10 V 3.0 nC

Gate to Drain Charge QGD ID = 12 A 6.2 nC

Note
Body Diode Forward Voltage VF(S-D) IF = 12 A, VGS = 0 V 0.89 1.5 V

Reverse Recovery Time trr IF = 12 A, VGS = 0 V 52 ns

Reverse Recovery Charge Qrr di/dt = 100 A/µs 94 nC

Note Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T. D.U.T.
VGS
RG = 25 Ω L RL
VGS 90%
10% VGS
Wave Form
RG 0
PG. 50 Ω VDD PG. VDD
VGS = 20 → 0 V VDS
90% 90%
VGS VDS
BVDSS 10% 10%
0 VDS 0
IAS Wave Form
ID VDS τ td(on) tr td(off) tf
VDD
τ = 1 µs ton toff
Duty Cycle ≤ 1%
Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

2 Data Sheet D16777EJ1V0DS

 2SK3793

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
120 25
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

100
20

80
15
60
10
40

20 5

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC - Case Temperature - °C TC - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

100
ID(pulse) PW = 100 µs
RDS(on) Limited
(at VGS = 10 V)
ID - Drain Current - A

10
ID(DC)

1 ms
1
Power Dissipation Limited

10 ms
0.1
TC = 25°C
Ｓingle pulse
0.01
0.1 1 10 100

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - °C/W

Rth(ch-A) = 62.5°C/W
100

10

Rth(ch-C) = 6.25°C/W

0.1

Single pulse
0.01
100 µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s

Data Sheet D16777EJ1V0DS 3

 2SK3793

DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE
25 100
Pulsed
TA = 150°C
20 VGS = 10 V 10
75°C
ID - Drain Current - A

ID - Drain Current - A
25°C
15 4.5 V 1 −55°C

10 0.1

5 0.01
VDS = 10 V
Pulsed
0 0.001
0 1 2 3 4 1 2 3 4 5
VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs.

CHANNEL TEMPERATURE DRAIN CURRENT
3 100
| yfs | - Forward Transfer Admittance - S

VDS = 10 V TA = −55°C
VGS(off) - Gate Cut-off Voltage - V

2.5 ID = 1 mA 25°C
10 75°C
2 150°C

1.5 1

1
0.1
0.5 VDS = 10 V
Pulsed
0 0.01
-100 -50 0 50 100 150 200 0.01 0.1 1 10 100
Tch - Channel Temperature - °C ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ

RDS(on) - Drain to Source On-state Resistance - mΩ

200 200
Pulsed Pulsed

150 150
ID = 12 A

VGS = 4.5 V
100 100 6A

10 V

50 50

0 0
0.1 1 10 100 0 5 10 15 20

ID - Drain Current - A VGS - Gate to Source Voltage - V

4 Data Sheet D16777EJ1V0DS

 2SK3793

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - mΩ

250 10000
Pulsed VGS = 0 V

Ciss, Coss, Crss - Capacitance - pF

f = 1 MHz
200

1000
150 V GS = 4.5 V Ciss

10 V
100
100

50 Coss

Crss
0 10
-100 -50 0 50 100 150 200 0.001 0.1 10 1000

Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100 120 12
VDD = 50 V ID = 12 A
VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

td(on), tr, td(off), tf - Switching Time - ns

VGS = 10 V
100 10
RG = 0 Ω
VDD = 80 V
td(off) 80 50 V 8
20 V
10 td(on) 60 6
tr
40 VGS 4
tf
20 2
VDS

1 0 0
0.1 1 10 100 0 5 10 15 20 25

ID - Drain Current - A QG - Gate Charge - nC

SOURCE TO DRAIN DIODE REVERSE RECOVERY TIME vs.

FORWARD VOLTAGE DIODE FORWARD CURRENT
100 1000
Pulsed VGS = 0 V
trr - Reverse Recovery Time - ns

di/dt =100 A/µs

IF - Diode Forward Current - A

10 VGS = 10 V
100
4.5 V
0V
1

10
0.1

0.01 1
0 0.5 1 1.5 0.1 1 10 100

VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A

Data Sheet D16777EJ1V0DS 5

 2SK3793

SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
100 100
VDD = 50 V
IAS - Single Avalanche Current - A

Energy Derating Factor - %

80 RG = 25 Ω
IAS = 10 A VGS = 20→0 V
10 IAS ≤ 10 A
60

EAS = 10 mJ
40
1 VDD = 50 V
RG = 25 Ω
VGS = 20→0 V 20
Starting Tch = 25°C
0.1 0
1µ 10 µ 100 µ 1m 10 m 25 50 75 100 125 150

L - Inductive Load - H Starting Tch - Starting Channel Temperature - °C

6 Data Sheet D16777EJ1V0DS

 2SK3793

PACKAGE DRAWING (Unit: mm)

Isolated TO-220 (MP-45F)

10.0 ±0.3 4.5 ±0.2

φ 3.2 ±0.2 2.7 ±0.2
15.0 ±0.3

3 ±0.1
12.0 ±0.2
13.5 MIN.
4 ±0.2

0.7 ±0.1 1.3 ±0.2 2.5 ±0.1

1.5 ±0.2 0.65 ±0.1
2.54 2.54

1. Gate
2. Drain
3. Source
1 2 3

EQUIVALENT CIRCUIT

Drain

Body
Gate Diode

Gate
Protection Source
Diode

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.

Data Sheet D16777EJ1V0DS 7

 2SK3793

• The information in this document is current as of March, 2004. The information is subject to change
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M8E 02. 11-1