V23990-P849-*4*-PM

datasheet

rd
flow PIM 0 3 gen 1200 V / 8 A

Features flow 0 housing

● 2 Clips housing in 12 and 17 mm height

● Trench Fieldstop Technology IGBT4
12 mm Press-fit pins 12 mm Solder pins
● Optional w/o BRC

Target Applications 17 mm Press-fit pins 17 mm Solder pins

● Industrial Drives Schematic

● Embedded Generation

Types
● V23990-P849-A48(Y)-PM
● V23990-P849-A49(Y)-PM
● V23990-P849-C48(Y)-PM
● V23990-P849-C49(Y)-PM

Maximum Ratings
T j = 25 °C, unless otherwise specified

Parameter Symbol Condition Value Unit

Rectifier Diode
Repetitive peak reverse voltage V RRM 1600 V

DC forward current I FAV T j = T jmax T s = 80 °C 35 A

Surge (non-repetitive) forward current I FSM 220 A

t p = 10 ms
2 2
I t-value I t 200 A2s

Power dissipation P tot T j = T jmax T s = 80 °C 44 W

Maximum Junction Temperature T jmax 150 °C

Inverter IGBT
Collector-emitter breakdown voltage V CE 1200 V

DC collector current IC T j = T jmax T s = 80 °C 15 A

Repetitive peak collector current I CRM t p limited by T jmax 24 A

Turn off safe operating area V CE ≤ 1200V, T j ≤ T op max 16 A

Power dissipation P tot T j = T jmax T s = 80 °C 61 W

Gate-emitter peak voltage V GE ±20 V

t SC T j ≤ 150 °C 10 µs
Short circuit ratings
V CC V GE = 15 V 800 V

Maximum Junction Temperature T jmax 175 °C

copyright Vincotech 1 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Maximum Ratings
T j = 25 °C, unless otherwise specified

Parameter Symbol Condition Value Unit

Inverter FWD
Peak Repetitive Reverse Voltage V RRM 1200 V

DC forward current IF T j = T jmax T s = 80 °C 15 A

Repetitive peak forward current I FRM t p limited by T jmax 20 A

Power dissipation P tot T j = T jmax T s = 80 °C 46 W

Maximum Junction Temperature T jmax 175 °C

Brake IGBT
Collector-emitter breakdown voltage V CE 1200 V

DC collector current IC T j = T jmax T s = 80 °C 10 A

Repetitive peak collector current I CRM t p limited by T jmax 12 A

Turn off safe operating area V CE ≤ 1200V, T j ≤ T op max 8 A

Power dissipation P tot T j = T jmax T s = 80 °C 47 W

Gate-emitter peak voltage V GE ±20 V

t SC T j ≤ 150 °C 10 µs
Short circuit ratings
V CC V GE = 15 V 360 V

Maximum Junction Temperature T jmax 175 °C

Brake FWD
Peak Repetitive Reverse Voltage V RRM 1200 V

DC forward current IF T j = T jmax T s = 80 °C 6 A

Repetitive peak forward current I FRM t p limited by T jmax 6 A

Power dissipation P tot T j = T jmax T s = 80 °C 23 W

Maximum Junction Temperature T jmax 150 °C

Thermal Properties
Storage temperature T stg -40…+125 °C

Operation temperature under switching condition T op -40…+(T jmax - 25) °C

Isolation Properties
Isolation voltage V is t = 2s DC Test Voltage 4000 V

Creepage distance min 12,7 mm

12 mm solder pin 9,7 mm

Clearance 12 mm press-fit pin 9,48 mm

17 mm housing >12,7 mm

Comparative tracking index CTI >200

copyright Vincotech 2 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Characteristic Values
Parameter Symbol Conditions Value Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A] T j [°C] Min Typ Max
V GS [V]
V DS [V] I D [A]

Rectifier Diode
25 1,2 1,8
Forward voltage VF 30 V
125 1,17
25 0,93
Threshold voltage (for power loss calc. only) V to 30 V
125 0,8
25 11
Slope resistance (for power loss calc. only) rt 30 mΩ
125 15
Reverse current Ir 1500 25 0,1 mA

phase-change
Thermal resistance junction to sink R th(j-s) material 1,59 K/W
λ = 3,4 W/mK

Inverter IGBT
Gate emitter threshold voltage V GE(th) V CE = V GE 0,0003 25 5 5,8 6,5 V

25 1,6 1,87 2,1

Collector-emitter saturation voltage V CEsat 8 V
125 2,20
Collector-emitter cut-off current incl. Diode I CES 0 1200 25 0,001 mA

Gate-emitter leakage current I GES 20 0 25 120 nA

Integrated Gate resistor R gint none Ω

25 71
Turn-on delay time t d(on)
125 71
25 19
Rise time tr
125 23
ns
25 194
Turn-off delay time t d(off)
R goff = 32 Ω 125 236
15 600 8
R gon = 32 Ω 25 79
Fall time tf
125 108
25 0,50
Turn-on energy loss E on
125 0,75
mWs
25 0,43
Turn-off energy loss E off
125 0,62
Input capacitance C ies 490

Output capacitance C oss f = 1 MHz 0 25 25 50 pF

Reverse transfer capacitance C rss 30

Gate charge QG V cc = 960 V ±15 8 25 53 nC

phase-change
Thermal resistance junction to sink R th(j-s) material 1,57 K/W
λ = 3,4 W/mK

Inverter FWD
25 1,35 1,70 2,05
Diode forward voltage VF 10 V
125 1,66
25 8,47
Peak reverse recovery current I RRM A
125 9,88
25 251
Reverse recovery time t rr ns
125 383
25 0,89
Reverse recovered charge Q rr R gon = 32 Ω µC
125 1,57
25 84
Peak rate of fall of recovery current ( di rf/dt )max A/µs
125 69
25 0,34
Reverse recovered energy E rec mWs
125 0,63
phase-change
Thermal resistance junction to sink R th(j-s) material 2,07 K/W
λ = 3,4 W/mK

copyright Vincotech 3 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Characteristic Values
Parameter Symbol Conditions Value Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A] T j [°C] Min Typ Max
V GS [V]
V DS [V] I D [A]

Brake IGBT
Gate emitter threshold voltage V GE(th) V CE = V GE 0,00015 25 5 5,8 6,5 V

25 1,6 1,96 2,2

Collector-emitter saturation voltage V CEsat 15 4 V
125 2,17
Collector-emitter cut-off incl diode I CES 0 1200 25 0,05 mA

Gate-emitter leakage current I GES 20 0 25 120 nA

Integrated Gate resistor R gint none Ω

25 93
Turn-on delay time t d(on)
125 90
25 19
Rise time tr
125 24
ns
25 184
Turn-off delay time t d(off)
R goff = 64 Ω 125 226
15 600 4
R gon = 64 Ω 25 71
Fall time tf
125 99
25 0,25
Turn-on energy loss E on
125 0,34
mWs
25 0,22
Turn-off energy loss E off
125 0,30
Input capacitance C ies 250

Output capacitance C oss f = 1 MHz 0 25 25 25 pF

Reverse transfer capacitance C rss 15

Gate charge QG 15 960 4 25 26 nC

phase-change
Thermal resistance junction to sink R th(j-s) material 2,03 K/W
λ = 3,4 W/mK

Brake FWD
25 1 1,91 2,35
Diode forward voltage VF 4 V
125 1,84
Reverse leakage current Ir 1200 25 250 µA

25 4,22
Peak reverse recovery current I RRM A
125 4,65
25 268
Reverse recovery time t rr ns
R gon = 64 Ω 125 446
R gon = 64 Ω 25 0,44
Reverse recovered charge Q rr µC
125 0,44
25 44
Peak rate of fall of recovery current ( di rf/dt )max A/µs
125 40
25 0,18
Reverse recovery energy E rec mWs
125 0,32
phase-change
Thermal resistance junction to sink R th(j-s) material 3,00 K/W
λ = 3,4 W/mK

Thermistor
Rated resistance R 25 22 kΩ

Deviation of R 100 Δ R/R R 100 = 1484 Ω 100 -5 5 %

Power dissipation P 25 5 mW

Power dissipation constant 25 1,5 mW/K

B-value B (25/50) Tol. ±1% 25 3962 K

B-value B (25/100) Tol. ±1% 25 4000 K

Vincotech NTC Reference I

copyright Vincotech 4 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Output Inverter

figure 1. IGBT figure 2. IGBT

Typical output characteristics Typical output characteristics
I C = f(V CE) I C = f(V CE)
30 30

IC (A)
IC (A)

25 25

20 20

15 15

10 10

5 5

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 µs tp = 250 µs
Tj = 25 °C Tj = 125 °C
V GE from 7 V to 17 V in steps of 1 V V GE from 7 V to 17 V in steps of 1 V

figure 3. IGBT figure 4. FWD

Typical transfer characteristics Typical diode forward current as
I C = f(V GE) a function of forward voltage
I F = f(V F)
10 30
IC (A)

IF (A)

25
8

20

15

4
Tj = Tjmax-25°C
10

2
5 Tj = Tjmax-25°C

Tj = 25°C Tj = 25°C

0 0
0 2 4 6 8 10 V GE (V) 12 0,0 0,5 1,0 1,5 2,0 2,5 V F (V) 3,0

At At
tp = 250 µs tp = 250 µs
V CE = 10 V

copyright Vincotech 5 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Output Inverter

figure 5. IGBT figure 6. IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I C) E = f(R G)
1,6 1,6

E (mWs)
E (mWs)

Eon High T

Eon High T
1,2 1,2

Eoff High T
Eon Low T
Eon Low T
0,8 0,8

Eoff Low T
Eoff High T

Eoff Low T
0,4 0,4

0 0
0 4 8 12 I C (A) 16 0 40 80 120 RG( Ω ) 160

With an inductive load at With an inductive load at

Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 32 Ω IC = 8 A
R goff = 32 Ω

figure 7. FWD figure 8. FWD

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
E rec = f(I C) E rec = f(R G)
1 0,7
E (mWs)
E (mWs)

Tj = Tjmax -25°C
Erec
Tj = Tjmax -25°C 0,6
Erec
0,8

0,5

0,6
0,4
Tj = 25°C
Erec
Tj = 25°C
Erec
0,3
0,4

0,2

0,2
0,1

0 0
0 4 8 12 I C (A) 16 0 20 40 60 80 100 120 R G ( Ω ) 140

With an inductive load at With an inductive load at

Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 32 Ω IC = 8 A

copyright Vincotech 6 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Output Inverter

figure 9. IGBT figure 10. IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I C) t = f(R G)
1,00 1,00

t ( µs)
t ( µs)

tdoff tdoff
tdon
0,10 tf 0,10
tf
tdon
tr
tr

0,01 0,01

0,00 0,00
0 2 4 6 8 10 12 14 I C (A) 16 0 20 40 60 80 100 120 R G ( Ω ) 140

With an inductive load at With an inductive load at

Tj = 125 °C Tj = 125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 32 Ω IC = 8 A
R goff = 32 Ω

figure 11. FWD figure 12. FWD

Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
t rr = f(I C) t rr = f(R gon)
0,6 0,8
t rr( µs)

t rr( µs)

trr
0,5 trr
Tj = Tjmax -25°C 0,6

Tj = Tjmax -25°C
0,4

trr trr
0,4
0,3
Tj = 25°C Tj = 25°C

0,2
0,2

0,1

0,0
0,0 0 20 40 60 80 100 120 140
0 2 4 6 8 10 12 14 I C (A) 16 R gon ( Ω )

At At
Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 8 A
R gon = 32 Ω V GE = ±15 V

copyright Vincotech 7 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Output Inverter

figure 13. FWD figure 14. FWD

Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Q rr = f(I C) Q rr = f(R gon)

2,5 2
Qrr( µC)

Qrr( µC)
Qrr Tj = Tjmax -25°C
2 1,6
Qrr

Tj = Tjmax -25°C

1,5 1,2

Qrr
Tj = 25°C Tj = 25°C
Qrr
1 0,8

0,5 0,4

0 0
0 2 4 6 8 10 12 14 I C (A) 16 0 20 40 60 80 100 120 R gon ( Ω) 140
At
At At
Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 8 A
R gon = 32 Ω V GE = ±15 V

figure 15. FWD figure 16. FWD

Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
I RRM = f(I C) I RRM = f(R gon)
12 25
IrrM (A)

IrrM (A)

Tj = Tjmax -25°C
10
IRRM 20
Tj = 25°C
IRRM
8

15

10

4
Tj = Tjmax - 25°C

IRRM
5
2 Tj = 25°C
IRRM

0 0
0 4 8 12 I C (A) 16 0 20 40 60 80 100 120 R gon ( Ω ) 140

At At
Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 8 A
R gon = 32 Ω V GE = ±15 V

copyright Vincotech 8 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Output Inverter

figure 17. FWD figure 18. FWD

Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(I C) dI 0/dt ,dI rec/dt = f(R gon)
600 3000

direc / dt (A/ µs)

direc / dt (A/µ s)

dI0/dt dI0/dt
dIrec/dt
500
dIrec/dt 2500

dIo/dtLow T
400 2000

di0/dtHigh T
300 1500

1000
200

500
100
dIrec/dtLow T

dIrec/dtHigh T 0
0
0 20 40 60 80 100 120 140
0 2 4 6 8 10 12 14 I C (A) 16 R gon ( Ω )

At At
Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 600 V VR= 600 V
V GE = ±15 V IF= 8 A
R gon = 32 Ω V GE = ±15 V

figure 19. IGBT figure 20. FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
Z th(j-s) = f(t p) Z th(j-s) = f(t p)
10 10
1 1
Zth(j-s) (K/W)
Zth(j-s) (K/W)

100 100

D = 0,5 D = 0,5
0,2 0,2
10-1 10-1
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0,000 0,000
10-2 10-2
t p (s) t p (s)
10-5 10-4 10-3 10-2 10-1 100 101 10-5 10-4 10-3 10-2 10-1 100 101

At At
D = tp/T D = tp/T
R th(j-s) = 1,57 K/W R th(j-s) = 2,07 K/W

IGBT thermal model values FWD thermal model values

R (K/W) Tau (s) R (K/W) Tau (s)

0,14 6,0E-01 0,05 4,3E+00
0,63 7,7E-02 0,16 5,0E-01
0,40 2,4E-02 0,78 7,9E-02
0,29 6,2E-03 0,53 2,7E-02
0,11 1,4E-03 0,35 5,0E-03
0,20 9,1E-04

copyright Vincotech 9 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Output Inverter

figure 21. IGBT figure 22. IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I C = f(T s)
120 Tc_coupled 20
Ptot (W)

IC (A)
16
90

12

60

30
4

0 0
0 50 100 150 T s ( o C) 200 0 50 100 150 T s ( o C) 200

At At
Tj = 175 °C Tj = 175 °C
V GE = 15 V

figure 23. FWD figure 24. FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
90 20
Ptot (W)

IF (A)

75

15

60

45 10

30

15

0 0
0 50 100 150 T s ( o C) 200 0 50 100 150 T s ( o C) 200

At At
Tj = 175 °C Tj = 175 °C

copyright Vincotech 10 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Output Inverter

figure 25. IGBT figure 26. IGBT

Safe operating area as a function Gate voltage vs Gate charge
of collector-emitter voltage
I C = f(V CE) V GE = f(Q g)
103 17,5

VGE (V)
IC (A)

15

2
240 V
10
100uS 12,5
960 V
1mS
10
10mS
1
10

100mS 7,5

DC
5
100

2,5

0
10-1 0 5 10 15 20 25 30
10 0
10 1
10 2
10 3 V CE (V) Q g (nC)

At At
D = single pulse IC = 8 A
Ts = 80 ºC
V GE = ±15 V
Tj = T jmax

figure 27. IGBT figure 28. IGBT

Short circuit withstand time as a function of Typical short circuit collector current as a function of
gate-emitter voltage gate-emitter voltage
t sc = f(V GE) I C(sc) = f(V GE)
17,5 70
IC (sc)
tsc (µS)

15 60

12,5 50

10 40

7,5 30

5 20

2,5 10

0 0
12 13 14 15 16 17 12 13 14 15 16 17 18
V GE (V) V GE (V)

At At
V CE = 1200 V V CE ≤ 1200 V
Tj ≤ 175 ºC Tj = 175 ºC

copyright Vincotech 11 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

figure 29. IGBT

Reverse bias safe operating area

I C = f(V CE)
18
IC (A)

IC MAX
16

14

12

10

MODULE

Ic CHIP
8

6 Ic

4
VCE MAX

0
0 200 400 600 800 1000 1200 1400
V CE (V)

At
Tj = T jmax-25 ºC

copyright Vincotech 12 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Brake

figure 1. IGBT figure 2. IGBT

Typical output characteristics Typical output characteristics
I C = f(V CE) I C = f(V CE)
15 15
IC (A)

IC (A)
12 12

9 9

6 6

3 3

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 µs tp = 250 µs
Tj = 25 °C Tj = 125 °C
V GE from 7 V to 17 V in steps of 1 V V GE from 7 V to 17 V in steps of 1 V

figure 3. IGBT figure 4. FWD

Typical transfer characteristics Typical diode forward current as
I C = f(V GE) a function of forward voltage
I F = f(V F)
6 15
IF (A)
IC (A)

5
12

6
2

3
1
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
Tj = 25°C
0 0
0 2 4 6 8 10 12 V GE (V) 14 0 1 1 2 2 3 3 V F (V) 4

At At
tp = 250 µs tp = 250 µs
V CE = 10 V

copyright Vincotech 13 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Brake

figure 5. IGBT figure 6. IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I C) E = f(R G)
0,8 0,75
E (mWs)

Eon

E (mWs)
0,7
Tj = Tjmax -25°C
Eon 0,60
0,6
Tj = Tjmax -25°C
Eon
0,5
Eoff
0,45
Eon

0,4

Eoff Eoff
0,30
0,3

Eoff
0,2
0,15

0,1
Tj = 25°C
Tj = 25°C

0,0 0,00
0 1 2 3 4 5 6 7 I C (A) 8 0 50 100 150 200 250 R ( Ω ) 300
G

With an inductive load at With an inductive load at

Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 64 Ω IC = 4 A
R goff = 64 Ω

figure 7. FWD figure 8. FWD

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
E rec = f(I C) E rec = f(R G)
0,5
E (mWs)

0,4
Erec
E (mWs)

Tj = Tjmax - 25°C
0,35
Erec
0,4 Tj = Tjmax -25°C
0,3

0,25
0,3

0,2
Erec Erec
Tj = 25°C
0,2 0,15
Tj = 25°C
0,1

0,1
0,05

0
0 0 50 100 150 200 250 300
0 2 4 6 I C (A) 8 RG (Ω )

With an inductive load at With an inductive load at

Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 64 Ω IC = 4 A

copyright Vincotech 14 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Brake

figure 9. IGBT figure 10. IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I C) t = f(R G)
1,00 1,00

t ( µs)
t ( µs)

tdoff
tdon
tdoff
0,10 tf 0,10 tf
tdon tr
tr

0,01 0,01

0,00 0,00
0 1 2 3 4 5 6 7 I C (A) 8 0 50 100 150 200 250 R G ( Ω ) 300

With an inductive load at With an inductive load at

Tj = 125 °C Tj = 125 °C
V CE = 600 V V CE = 600 V
V GE = ±15 V V GE = ±15 V
R gon = 64 Ω IC = 4 A
R goff = 64 Ω

figure 11. IGBT figure 12. FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
Z th(j-s) = f(t p) Z th(j-s) = f(t p)
101 101
Zth(j-s) (K/W)

Zth(j-s) (K/W)

100 100

D = 0,5 D = 0,5
10-1 0,2 10-1 0,2
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0,000 0,000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 100
t p (s) 101
t p (s)
10-5 10-4 10-3 10-2 10-1 100 101

At D = tp/T At D = tp/T

R th(j-s) = 2,03 K/W R th(j-s) = 3,00 K/W

copyright Vincotech 15 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Brake

figure 13. IGBT figure 14. IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I C = f(T s)
100 12
Ptot (W)

IC (A)
10
80

60

40

20
2

0 0
0 50 100 150 T s ( o C) 200 0 50 100 150 T s ( o C) 200

At At
Tj = 175 ºC Tj = 175 ºC
V GE = 15 V

figure 15. FWD figure 16. FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
60 8
Ptot (W)

IF (A)

50

40

30 4

20

10

0 0
o o
0 25 50 75 100 125 T s ( C) 150 0 30 60 90 120 T s ( C) 150

At At
Tj = 150 ºC Tj = 150 ºC

copyright Vincotech 16 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Input Rectifier Bridge

figure 1. Rectifier Diode figure 2. Rectifier Diode

Typical diode forward current as Diode transient thermal impedance
a function of forward voltage as a function of pulse width
I F = f(V F) Z th(j-s) = f(t p)
100 101

Zth(j-s) (K/W)
IF (A)

80

100

60

D = 0,5
40 0,2
0,1
10-1
0,05
0,02
20 0,01
Tj = Tjmax-25°C 0,005
0,000
Tj = 25°C
0
10-2 t p (s)
0,0 0,3 0,5 0,8 1,0 1,3 1,5 1,8 V F (V) 2,0
10-5 10-4 10-3 10-2 10-1 100 101

At At D = tp/T
tp = 250 µs
D = tp/T
R th(j-s) = 1,59 K/W

figure 3. Rectifier Diode figure 4. Rectifier Diode

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
100 50
Ptot (W)

IF (A)

80 40

60 30

40 20

20 10

0 0
0 25 50 75 100 125 T s ( o C) 150 0 25 50 75 100 125 T s ( o C) 150

At At
Tj = 150 ºC Tj = 150 ºC

copyright Vincotech 17 08 May. 2017 / Revision 8

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Thermistor

figure 1. Thermistor
Typical NTC characteristic
as a function of temperature
R = f(T )
NTC-typical temperature characteristic
25000
R (Ω)

20000

15000

10000

5000

0
25 45 65 85 105 T (°C) 125

copyright Vincotech 18 08 May. 2017 / Revision 8

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datasheet

Switching Definitions Output Inverter

General conditions
Tj = 125 °C
R gon = 32 Ω
R goff = 32 Ω

figure 1. IGBT figure 2. IGBT

Turn-off Switching Waveforms & definition of t doff, t Eoff Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off) (t E on = integrating time for E on)
120 250
%
tdoff %
VCE
100 IC
200
VGE 90% VCE 90%
80

150
60
IC
VCE
40 100
tEoff VGE
tdon
20
50
IC 1%
0
VGE VGE10% IC10% VCE 3%
0
-20

tEon
-40 -50
-0,4 -0,2 0 0,2 0,4 0,6 0,8 2,9 3 3,1 3,2 3,3
time (µs) time(µs)

V GE (0%) = -15 V V GE (0%) = -15 V

V GE (100%) = 15 V V GE (100%) = 15 V
V C (100%) = 600 V V C (100%) = 600 V
I C (100%) = 8 A I C (100%) = 8 A
t doff = 0,24 µs t don = 0,07 µs
t E off = 0,50 µs t E on = 0,27 µs

figure 3. IGBT figure 4. IGBT

Turn-off Switching Waveforms & definition of t f Turn-on Switching Waveforms & definition of t r
120 250
fitted
% VCE % Ic
IC
100
200
IC 90%

80
150
IC 60%
60
VCE
100
IC90%
40 IC 40%
tr
50
20
IC10%
IC10%
0 0

tf
-20
-50
0 0,1 0,2 0,3 0,4 0,5
3 3,05 3,1 3,15 3,2
time (µs) time(µs)

V C (100%) = 600 V V C (100%) = 600 V

I C (100%) = 8 A I C (100%) = 8 A
tf = 0,11 µs tr = 0,02 µs

copyright Vincotech 19 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Switching Definitions Output Inverter

figure 5. IGBT figure 6. IGBT

Turn-off Switching Waveforms & definition of t Eoff Turn-on Switching Waveforms & definition of t Eon
120 200
% Pon
Eoff %

100
Poff 150

80

Eon
100
60

40
50

20
VGE 10% VCE 3%
VGE 90% IC 1% 0
tEon
0
tEoff

-20 -50
-0,1 0,1 0,3 0,5 0,7 2,9 3 3,1 3,2 3,3
time (µs) time(µs)

P off (100%) = 4,93 kW P on (100%) = 4,93 kW

E off (100%) = 0,62 mJ E on (100%) = 0,75 mJ
t E off = 0,50 µs t E on = 0,27 µs

figure 7. FWD
Turn-off Switching Waveforms & definition of t rr
150

%
Id
100

trr
50

Vd fitted
0
IRRM10%

-50

-100 IRRM90%
IRRM100%

-150
3 3,2 3,4 3,6
time(µs)

V d (100%) = 600 V
I d (100%) = 8 A
I RRM (100%) = -10 A
t rr = 0,38 µs

copyright Vincotech 20 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Switching Definitions Output Inverter

figure 8. FWD figure 9. FWD

Turn-on Switching Waveforms & definition of t Qrr Turn-on Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr) (t Erec= integrating time for E rec)
150 120
% %
Qrr Erec
100
100
Id
tQrr 80
50 tErec

60
0
40
Prec
-50
20

-100
0

-150 -20
3 3,4 3,8 4,2 3 3,2 3,4 3,6 3,8 4 4,2
time(µs) time(µs)

I d (100%) = 8 A P rec (100%) = 4,93 kW

Q rr (100%) = 1,57 µC E rec (100%) = 0,63 mJ
t Q rr = 0,80 µs t E rec = 0,80 µs

copyright Vincotech 21 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Ordering Code and Marking - Outline

Ordering Code & Marking
Version Ordering Code in DataMatrix as in packaging barcode as
without thermal paste 12 mm housing
V23990-P849-A48-PM P849A48 P849A48
with Solder pins ''A'' topology

without thermal paste 12 mm housing

V23990-P849-C48-PM P849C48 P849C48
with Solder pins ''C'' topology

without thermal paste 17 mm housing

V23990-P849-A49-PM P849A49 P849A49
with Solder pins "A" topology

without thermal paste 17 mm housing

V23990-P849-C49-PM P849C49 P849C49
with Solder pins "C" topology

without thermal paste 17 mm housing

V23990-P849-A49Y-PM P849A49Y P849A49Y
with Press-fit pins "A" topology

without thermal paste 17 mm housing

V23990-P849-C49Y-PM P849C49Y P849C49Y
with Press-fit pins "C" topology

without thermal paste 12 mm housing

V23990-P849-A48Y-PM P849A48Y P849A48Y
with Press-fit pins "A" topology

without thermal paste 12 mm housing

V23990-P849-C48Y-PM P849C48Y P849C48Y
with Press-fit pins "C" topology

with phase change material 12 mm housing

V23990-P849-A48-/3/-PM P849A48 P849A48-/3/
with Solder pins "A" topology

with phase change material 12 mm housing

V23990-P849-C48-/3/-PM P849C48 P849C48-/3/
with Solder pins "C" topology

with phase change material 17 mm housing

V23990-P849-A49-/3/-PM P849A49 P849A49-/3/
with Solder pins "A" topology

with phase change material 17 mm housing

V23990-P849-C49-/3/-PM P849C49 P849C49-/3/
with Solder pins "C" topology

with phase change material 17 mm housing

V23990-P849-A49Y-/3/-PM P849A49Y P849A49Y-/3/
with Press-fit pins "A" topology

with phase change material 17 mm housing

V23990-P849-C49Y-/3/-PM P849C49Y P849C49Y-/3/
with Press-fit pins "C" topology

with phase change material 12 mm housing

V23990-P849-A48Y-/3/-PM P849A48Y P849A48Y-/3/
with Press-fit pins "A" topology

with phase change material 12 mm housing

V23990-P849-C48Y-/3/-PM P849C48Y P849C48Y-/3/
with Press-fit pins "C" topology

Outline
Pin table
Pin X Y

1 25,5 2,7
2 25,5 0
3 22,8 0
4 20,1 0
5 16,2 0
6 13,5 0
7 10,8 0
8 8,1 0
9 5,4 0
10 2,7 0
11 0 0
12 0 19,8
13 0 22,5
14 7,5 19,8
15 7,5 22,5
16 15 19,8
17 15 22,5
18 22,8 22,5
19 25,5 22,5
20 33,5 22,5
21 33,5 15
22 33,5 7,5
23 33,5 0

copyright Vincotech 22 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Pinout - Identification

Pinout

For "A" topology:

Identification
ID Component Voltage Current Function Comment
T1-T6 IGBT 1200 V 8A Inverter Switch
D1-D6 FWD 1200 V 10 A Inverter Diode
D8-D13 Rectifier 1600 V 25 A Rectifier Diode
T7 IGBT 1200 V 4A Brake Switch
D7 FWD 1200 V 4A Brake Diode
T NTC Thermistor

For "C" topology:

Identification
ID Component Voltage Current Function Comment
T1-T6 IGBT 1200 V 8A Inverter Switch
D1-D6 FWD 1200 V 10 A Inverter Diode
D8-D13 Rectifier 1600 V 25 A Rectifier Diode
T NTC Thermistor

copyright Vincotech 23 08 May. 2017 / Revision 8

 V23990-P849-*4*-PM
datasheet

Packaging instruction
Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample

Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.

Package data
Package data for flow 0 packages see vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.: Date: Modification: Pages

V23990-P849-x4x-D8-14 08 May. 2017 Rth change

DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.

copyright Vincotech 24 08 May. 2017 / Revision 8