V23990-K203-B10-PM

datasheet

®
MiniSKiiP 1 PIM + PFC 600 V / 15 A

Features MiniSKiiP® 1 housing

● Solderless interconnection
● IGBT Trench 3 technology

Target Applications

● Industrial drives
Schematic

Types

● V23990-K203-B10-PM

Maximum Ratings
T j = 25 °C, unless otherwise specified

Parameter Symbol Condition Value Unit

Rectifier Diode
Repetitive peak reverse voltage V RRM 1600 V

DC forward current I FAV T j = T jmax T s = 80 °C 30 A

Surge (non-repetitive) forward current I FSM 200 A

t p = 10 ms T j=150°C
2
I2t-value I t 200 A2s

Power dissipation P tot T j = T jmax T s = 80 °C 46 W

Maximum Junction Temperature T jmax 150 °C

PFC Switch
Collector-emitter breakdown voltage V CE 650 V

DC collector current IC T j = T jmax T s = 80 °C 26 A

Repetitive peak collector current I CRM t p limited by T jmax 90 A

Turn off safe operating area V CE ≤ 650V, T j ≤ T op max 60 A

Power dissipation P tot T j = T jmax T s = 80 °C 68 W

Gate-emitter peak voltage V GE 20 V

t SC T j ≤ 150 °C 5 µs
Short circuit ratings
V CC V GE = 15 V 400 V
Maximum Junction Temperature T jmax 175 °C

copyright Vincotech 1 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Maximum Ratings
T j = 25 °C, unless otherwise specified

Parameter Symbol Condition Value Unit

PFC Diode
Peak Repetitive Reverse Voltage V RRM 650 V

DC forward current IF T j = T jmax T s = 80 °C 37 A

Repetitive peak forward current I FRM t p limited by T jmax 90 A

Power dissipation P tot T j = T jmax T s = 80 °C 67 W

Maximum Junction Temperature T jmax 175 °C

Inverter Switch
Collector-emitter breakdown voltage V CE 600 V

DC collector current IC T j = T jmax T s = 80 °C 21 A

Repetitive peak collector current I CRM t p limited by T jmax 45 A

Turn off safe operating area V CE ≤ 600V, T j ≤ T op max 30 A

Power dissipation P tot T j = T jmax T s = 80 °C 53 W

Gate-emitter peak voltage V GE ±20 V

t SC T j ≤ 150 °C 6 µs
Short circuit ratings
V CC V GE = 15 V 360 V

Maximum Junction Temperature T jmax 175 °C

Inverter Diode
Peak Repetitive Reverse Voltage V RRM 600 V

DC forward current IF T j = T jmax T s = 80 °C 20 A

Repetitive peak forward current I FRM t p limited by T jmax 40 A

Power dissipation P tot T j = T jmax T s = 80 °C 38 W

Maximum Junction Temperature T jmax 175 °C

Thermal Properties
Storage temperature T stg -40…+125 °C

Operation temperature under switching condition T op -40…+(T jmax - 25) °C

Isolation Properties
Isolation voltage V is t = 2s DC Test Voltage 4000 V

Creepage distance min 12,7 mm

Clearance min 12,7 mm

Comparative tracking index CTI >200

copyright Vincotech 2 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Characteristic Values
Parameter Symbol Conditions Value Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A] T j [°C] Min Typ Max
V GS [V]
V DS [V] I D [A]

Rectifier Diode
25 1 1,51 1,75
Forward voltage VF 25 V
125 1,42
25 0,86
Threshold voltage (for power loss calc. only) V to 25 V
125 0,79
25 26
Slope resistance (for power loss calc. only) rt 25 mΩ
125 25
25 0,1
Reverse current Ir 1600 mA
125
Thermal grease
Thermal resistance junction to sink R th(j-s) thickness ≤ 50um 1,51 K/W
λ = 1 W/mK

PFC Switch
25 4,2 5,1 5,6
Gate emitter threshold voltage V GE(th) V CE = V GE 0,00043 V
125
25 1 2,1 2,6
Collector-emitter saturation voltage V CEsat 15 30 V
125 2,3
25 0,01
Collector-emitter cut-off I CES 0 650 mA
125
25 400
Gate-emitter leakage current I GES 20 0 nA
125
none
Integrated Gate resistor R gint Ω

25 22
Turn-on delay time t d(on)
125 21
25 28,2
Rise time tr
125 27,8
ns
25 197
Turn-off delay time t d(off)
R goff = 8 Ω 125 222
±15 300 15
R gon = 16 Ω 25 6
Fall time tf
125 37
25 0,278
Turn-on energy loss E on
125 0,507
mWs
25 0,15
Turn-off energy loss E off
125 0,228
Input capacitance C ies 1630

Output capacitance C oss f = 1 MHz 0 25 25 108 pF

Reverse transfer capacitance C rss 50

Gate charge QG ±15 480 30 25 167 nC

Thermal grease
Thermal resistance junction to sink R th(j-s) thickness ≤ 50um 1,40 K/W
λ = 1 W/mK

PFC Diode
25 1 2,1 2,9
Forward voltage VF 30 V
125 1,83
25 10
Reverse leakage current I rm 650 µA
125
25 8,06
Peak recovery current I RRM A
125 14,94
25 94,2
Reverse recovery time t rr ns
125 128,9
25 0,31
Reverse recovery charge Q rr R gon = 16 Ω ±15 300 15 µC
125 1,11
25 0,05
Reverse recovered energy E rec mWs
125 0,16
25 526
Peak rate of fall of recovery current ( di rf/dt )max A/µs
125 195

Thermal grease
Thermal resistance junction to sink R th(j-s) thickness ≤ 50um 1,42 K/W
λ = 1 W/mK

copyright Vincotech 3 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Characteristic Values
Parameter Symbol Conditions Value Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A] T j [°C] Min Typ Max
V GS [V]
V DS [V] I D [A]

Inverter Switch
25 5 5,8 6,5
Gate emitter threshold voltage V GE(th) V CE = V GE 0,00021 V
125
25 1,1 1,73 2,2
Collector-emitter saturation voltage V CEsat 15 15 V
125 1,87
25 0,05
Collector-emitter cut-off current incl. Diode I CES 0 600 mA
125
25 300
Gate-emitter leakage current I GES 20 0 nA
125
Integrated Gate resistor R gint none Ω

25 17,8
Turn-on delay time t d(on)
125 17,8
25 18,2
Rise time tr
125 22,5
ns
25 135
Turn-off delay time t d(off)
R goff = 8 Ω 125 155
±15 300 15
R gon = 16 Ω 25 100
Fall time tf
125 103
25 0,39
Turn-on energy loss E on
125 0,5
mWs
25 0,35
Turn-off energy loss E off
125 0,45
Input capacitance C ies 860

Output capacitance C oss f = 1 MHz 0 25 25 55 pF

Reverse transfer capacitance C rss 24

Gate charge QG ±15 480 15 25 87 nC

Thermal grease
Thermal resistance junction to sink R th(j-s) thickness ≤ 50um 1,81 K/W
λ = 1 W/mK

Inverter Diode
25 0,8 1,8 2,1
Diode forward voltage VF 20 V
125 1,86
25 8,25
Peak reverse recovery current I RRM A
125 10,6
25 217,5
Reverse recovery time t rr ns
125 332,1
25 0,81
Reverse recovered charge Q rr R gon = 16 Ω ±15 300 15 µC
125 1,45
25 43
Peak rate of fall of recovery current ( di rf/dt )max A/µs
125 63
25 0,15
Reverse recovered energy E rec mWs
125 0,29

Thermal grease
Thermal resistance junction to sink R th(j-s) thickness ≤ 50um 2,51 K/W
λ = 1 W/mK

Thermistor
Rated resistance R 25 1000 Ω

Deviation of R 100 Δ R/R R 100 = 1670 Ω 100 -3 3 %

Power dissipation P 100 1670,3125 Ω

Power dissipation constant 25 mW/K

B-value B (25/50) 25 7,635*10-3 1/K

B-value B (25/100) 25 1,731*10-5 1/K²

Vincotech NTC Reference E

copyright Vincotech 4 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Inverter Characteristics

figure 1. IGBT figure 2. IGBT

Typical output characteristics Typical output characteristics
I C = f(V CE) I C = f(V CE)
60 60 6
IC (A)

IC (A)
50 50

40 40

30 30

20 20

10 10

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 μs tp = 250 μs
Tj = 25 °C Tj = 125 °C
V GE from 7 V to 17 V in steps of 1 V V GE from 7 V to 17 V in steps of 1 V

figure 3. IGBT figure 4. FWD

Typical transfer characteristics Typical diode forward current as
I C = f(V GE) a function of forward voltage
I F = f(V F)
16 50
IF (A)
IC (A)

40
12

30

20

4
10

0 0
0 2 4 6 8 V GE (V) 10 0 0,5 1 1,5 2 2,5 V F (V) 3

At At
Tj = 25/125 °C Tj = 25/125 °C
tp = 250 μs tp = 250 μs
V CE = 10 V

copyright Vincotech 5 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Inverter Characteristics

figure 5. IGBT figure 6. IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I C) E = f(R G)
1,6 1,2

E (mWs)
Eon High T
E (mWs)

Eon High T 1

Eon Low T
1,2
Eon Low T
0,8

0,8 0,6
Eoff High T
Eoff High T
Eoff Low T
Eoff Low T 0,4

0,4
0,2

0
0,0
0 32 64 96 128 160
0 5 10 15 20 25 30
I C (A) RG( Ω )

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 16 Ω IC = 15 A
R goff = 8 Ω

figure 7. FWD figure 8. FWD

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
E rec = f(I C) E rec = f(R G)
0,5 0,4
E (mWs)

E (mWs)

Erec
0,4
0,3

0,3

Erec
Erec 0,2

0,2

Erec
0,1
0,1

0 0,0
0 5 10 15 20 25 I C (A) 30 0 32 64 96 128 R G ( Ω ) 160

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 16 Ω IC = 15 A

copyright Vincotech 6 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Inverter Characteristics

figure 9. IGBT figure 10. IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I C) t = f(R G)
1,00 1,00
tdoff

t ( µs)
t ( µs)

tf tdoff tf
0,10 0,10
tdon
tr
tdon

0,01 0,01

tr

0,00 0,00
0 5 10 15 20 25 I C (A) 30 0 32 64 96 128 R G ( Ω ) 160

With an inductive load at With an inductive load at

Tj = 125 °C Tj = 125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 16 Ω IC = 15 A
R goff = 8 Ω

figure 11. FWD figure 12. FWD

Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
t rr = f(I C) t rr = f(R gon)
0,6 0,5
t rr( µs)

t rr( µs)

trr
0,5 trr
0,4

0,4 trr
0,3
trr
0,3

0,2

0,2

0,1
0,1

0 0
0 5 10 15 20 25 I C (A) 30 0 32 64 96 128 R gon ( Ω ) 160

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR= 300 V
V GE = 15 V IF= 15 A
R gon = 16 Ω V GE = 15 V

copyright Vincotech 7 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Inverter Characteristics

figure 13. FWD figure 14. FWD

Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Q rr = f(I C) Q rr = f(R gon)

2,4 1,6
Qrr( µC)

Qrr( µC)
Qrr
2 Qrr

1,2

1,6

Qrr Qrr
1,2 0,8

0,8

0,4

0,4

0 0
0 5 10 15 20 25 I C (A) 30 0 32 64 96 128 R gon ( Ω) 160
At
At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR= 300 V
V GE = 15 V IF= 15 A
R gon = 16 Ω V GE = 15 V

figure 15. FWD figure 16. FWD

Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
I RRM = f(I C) I RRM = f(R gon)
12 12
IrrM (A)

IrrM (A)

10 10

IRRM
IRRM

8 8
IRRM
IRRM
6 6

4 4

2 2

0 0
0 5 10 15 20 25 30 0 32 64 96 128
I C (A) R gon ( Ω ) 160

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR= 300 V
V GE = 15 V IF= 15 A
R gon = 16 Ω V GE = 15 V

copyright Vincotech 8 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Inverter Characteristics

figure 17. FWD figure 18. FWD

Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(I C) dI 0/dt ,dI rec/dt = f(R gon)
700 750
dI0/dt
direc / dt (A/µ s)

direc / dt (A/ µs)

dIrec/dt
dIrec/dt
600 dI0/dt
600
dIo/dtLow T
500
di0/dtHigh T
450
400

dIrec/dtHigh T
300
300
dIo/dtLow T
dIrec/dtLow T
200
dIrec/dtHigh T dIrec/dtLow T
150
100

di0/dtHigh T
0 0
0 5 10 15 20 25 30 0 32 64 96 128 160
I C (A) R gon ( Ω )

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR= 300 V
V GE = 15 V IF= 15 A
R gon = 16 Ω V GE = 15 V

figure 19. IGBT figure 20. FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
Z th(j-s) = f(t p) Z th(j-s) = f(t p)
101 101
Zth(j-s) (K/W)
Zth(j-s) (K/W)

100 100

D = 0,5 D = 0,5
0,2 0,2
10-1 10-1
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0.000 0.000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 100 t p (s) 10110 10-5 10-4 10-3 10-2 10-1 100
t p (s) 10110

At At
D = tp/T D = tp/T
R th(j-s) = 1,81 K/W R th(j-s) = 2,51 K/W

IGBT thermal model values FWD thermal model values

R (K/W) Tau (s) R (K/W) Tau (s)

4,79E-02 6,42E+00 5,06E-02 9,02E+00
2,09E-01 5,50E-01 2,53E-01 6,56E-01
7,40E-01 1,07E-01 8,83E-01 1,18E-01
5,03E-01 1,63E-02 7,35E-01 2,86E-02
1,67E-01 2,67E-03 3,35E-01 4,82E-03
1,40E-01 2,31E-04 2,57E-01 6,88E-04

copyright Vincotech 9 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Inverter Characteristics

figure 21. IGBT figure 22. IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I C = f(T s)
100 30

IC (A)
Ptot (W)

25
80

20

60

15

40

10

20
5

0 0
0 50 100 150 T s ( o C) 200 0 50 100 150 T s ( o C) 200

At At
Tj = 175 °C Tj = 175 °C
V GE = 15 V

figure 23. FWD figure 24. FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
80 30
Ptot (W)

IF (A)

25

60

20

40 15

10

20

0 0
0 50 100 150 T s ( o C) 200 0 50 100 150 T s ( o C) 200

At At
Tj = 175 °C Tj = 175 °C

copyright Vincotech 10 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Inverter Characteristics

figure 25. IGBT figure 26. IGBT

Safe operating area as a function Gate voltage vs Gate charge
of collector-emitter voltage
I C = f(V CE) V GE = f(Q g)
102 20

VGE (V)
IC (A)

10uS 17,5

100uS
101
15

1mS 12,5
120V
10mS 480V
100 10
100mS

7,5
DC

5
10-1

2,5

0
10-2 0 20 40 60 80 100
10 0
10 1
10 2 V CE (V) 103 Q g (nC)

At At
D = single pulse IC = 15 A
Ts = 80 ºC
V GE = 15 V
Tj = T jmax ºC

figure 27. IGBT figure 28. IGBT

Short circuit withstand time as a function of Typical short circuit collector current as a function of
gate-emitter voltage gate-emitter voltage
t sc = f(V GE) I C(sc) = f(V GE)
14 250
IC (sc)
tsc (µS)

225
12
200

10 175

150
8

125

6
100

4 75

50
2
25

0 0
10 11 12 13 14 15 12 13 14 15 16 17 18 19 V 20
V GE (V) GE (V)

At At
V CE = 600 V V CE ≤ 600 V
Tj ≤ 175 ºC Tj = 175 ºC

copyright Vincotech 11 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Inverter Characteristics
figure 29. IGBT
Reverse bias safe operating area

I C = f(V CE)
40
IC (A)

IC MAX
30

20 Ic CHIP
MODULE
Ic

10
VCE MAX

0
0 200 400 600 800
V CE (V)

At
Tj = 125 °C
R gon = 16 Ω
R goff = 8Ω

copyright Vincotech 12 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

PFC Characteristics

figure 1. IGBT figure 2. IGBT

Typical output characteristics Typical output characteristics
I C = f(V CE) I C = f(V CE)
60 60

IC (A)
IC (A)

45 45

30 30

15 15

0 0
0 1 2 3 4 V DS (V) 5 0 1 2 3 4 5 V DS (V) 6

At At
tp = 250 μs tp = 250 μs
Tj = 25 °C Tj = 126 °C
V CE from 7 V to 17 V in steps of 1 V V CE from 7 V to 17 V in steps of 1 V

figure 3. IGBT figure 4. FWD

Typical transfer characteristics Typical diode forward current as
a function of forward voltage
I C = f(V CE) I F = f(V F)
30 90
IF (A)
ID (A)

25 75

20 60

15 45

10 30

5 15

0
0
V GS (V) 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V (V) 4,0
0 2 4 6 8 10 F

At At
tp = 250 μs Tj = 25/125 °C tp = 250 μs Tj = 25/125 °C
V CE = 10 V

copyright Vincotech 13 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

PFC Characteristics

figure 5. IGBT figure 6. IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I C) E = f(R G)
1,2 1,2

E (mWs)
E (mWs)

Eon

1 1

Eon
0,8 0,8

Eon Eon
0,6 0,6

Eoff

0,4 0,4
Eoff
Eoff
Eoff
0,2 0,2

0 0
0 5 10 15 20 25 I C (A) 30 0 16 32 48 64 RG (Ω ) 80

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 16 Ω IC = 15 A
R goff = 8 Ω

figure 7. FWD figure 8. FWD

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
E rec = f(I c) E rec = f(R G)
0,2 0,2
E (mWs)

Erec
E (mWs)

0,15 0,15

Erec

0,1 0,1

Erec

0,05 0,05
Erec

0 0
0 5 10 15 20 25 I C (A) 30 0 16 32 48 64 R G ( Ω ) 80

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 16 Ω IC = 15 A
R goff = 8 Ω

copyright Vincotech 14 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

PFC Characteristics

figure 9. IGBT figure 10. IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I C) t = f(R G)
1 1

tdoff
t ( µs)

t ( µs)
tdoff

0,1 tf 0,1
tdon
tr

tf
tdon
0,01 0,01

tr

0,001 0,001
0 5 10 15 20 25 I C (A) 30 0 16 32 48 64 R G ( Ω ) 80

With an inductive load at With an inductive load at

Tj = 125 °C Tj = 125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 16 Ω IC = 15 A
R goff = 8 Ω

figure 11. FWD figure 12. FWD

Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
t rr = f(I c) t rr = f(R gon)
0,18 0,24
t rr( µs)
t rr( µs)

0,16 trr trr

0,20
0,14
trr
trr 0,16
0,12

0,10
0,12

0,08

0,08
0,06

0,04
0,04

0,02

0,00
0,00
0 10 20 30 40 50 60 70
0 5 10 15 20 25 I C (A) 30 R gon ( Ω )

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR= 300 V
V GE = 15 V IF= 15 A
R gon = 16 Ω V GS = 15 V

copyright Vincotech 15 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

PFC Characteristics

figure 13. FWD figure 14. FWD

Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Q rr = f(I C) Q rr = f(R gon)
1,5 1,5
Qrr ( µC)

Qrr ( µC)
Qrr

1,2 1,2

Qrr
0,9 0,9

0,6 0,6

Qrr
0,3 0,3
Qrr

0,0 0,0
0 5 10 15 20 25 I C (A) 30 0 10 20 30 40 50 60 R gon ( Ω) 70
At
At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR = 300 V
V GE = 15 V IF= 15 A
R gon = 16 Ω V GS = 15 V

figure 15. FWD figure 16. FWD

Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
I RRM = f(I C) I RRM = f(R gon)
16 25
IrrM (A)
IrrM (A)

14
IRRM
20
12

10 15

8
IRRM
IRRM
10
6

4 IRRM
5

0
0 0 10 20 30 40 50 60 70
0 5 10 15 20 25 I C (A) 30 R gon ( Ω )

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR= 300 V
V GE = 15 V IF= 15 A
R gon = 16 Ω V GS = 15 V

copyright Vincotech 16 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

PFC Characteristics

figure 17. FWD figure 18. FWD

Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(I c) dI 0/dt ,dI rec/dt = f(R gon)
1000 2000
dI0/dt
direc / dt (A/ µs)

direc / dt (A/ µs)

dI0/dt
dIrec/dt
900 dIrec/dt 1750

800
1500
700
1250
600

500 1000

400 750

300
500

200
250
100

0
0
0 10 20 30 40 50 60 70
0 5 10 15 20 25 I C (A) 30 R gon ( Ω)

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR= 300 V
V GE = 15 V IF = 15 A
R gon = 16 Ω V GS = 15 V

figure 19. IGBT figure 20. FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
Z th(j-s) = f(t p) Z th(j-s) = f(t p)
101 101
Zth(j-s) (K/W)

Zth(j-s) (K/W)

100 100

D = 0,5 D = 0,5
10-1 0,2 10-1
0,2
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0.000 0.000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 100
t p (s) 10110 10-5 10-4 10-3 10-2 10-1 100 t p (s) 10110

At At
D = tp/T D = tp/T
R th(j-s) = 1,40 K/W R th(j-s) = 1,42 K/W

IGBT thermal model values FWD thermal model values

R (K/W) Tau (s) R (K/W) Tau (s)

7,09E-02 2,80E+00 2,89E-02 8,41E+00
2,04E-01 4,27E-01 1,06E-01 9,99E-01
6,77E-01 1,13E-01 6,58E-01 1,49E-01
2,25E-01 3,41E-02 3,38E-01 4,10E-02
1,65E-01 8,19E-03 1,58E-01 8,96E-03
5,35E-02 1,40E-03 1,27E-01 1,55E-03

copyright Vincotech 17 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
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PFC Characteristics

figure 21. IGBT figure 22. IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I C = f(T s)
150 40
Ptot (W)

IC (A)
120
30

90

20

60

10
30

0 0
0 50 100 150 T s ( o C) 200 0 50 100 150 T s ( o C) 200

At At
Tj = 175 ºC Tj = 175 ºC
V GE = 15 V

figure 23. FWD figure 24. FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
150 50
Ptot (W)

IF (A)

120 40

90 30

60 20

30 10

0 0
0 50 100 150 T s ( o C) 200 0 50 100 150 T s ( o C) 200

At At
Tj = 175 ºC Tj = 175 ºC

copyright Vincotech 18 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
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PFC Characteristics

figure 25. IGBT figure 26. IGBT

Safe operating area as a function Gate voltage vs Gate charge
of collector-emitter voltage
I C = f(V CE) V GE = f(Q g)
102 17,5

VCE (V)
10uS
IC (A)

15
100uS

101
12,5

1mS 120 V
10

100
10mS 480 V
7,5

DC
100mS 5

10-1

2,5

0
10-2 0 25 50 75 100 125 150 175 200
0 2
10 101 10 V CE (V) 10 3 Qg (nC)

At At
D = single pulse IC = 15 A
Ts = 80 ºC
V GE = 15 V
Tj = T jmax

figure 27. IGBT figure 28. IGBT

Short circuit withstand time as a function of Typical short circuit collector current as a function of
gate-emitter voltage gate-emitter voltage
t sc = f(V GE) I C(sc) = f(V GE)
14 500
IC(SC)
tsc (µS)

12
400

10

300
8

6
200

100
2

0 0
10 11 12 13 14 V GE (V) 15 12 14 16 18 V GE (V) 20

At At
V CE = 600 V V CE ≤ 600 V
Tj ≤ 175 ºC Tj = 175 ºC

copyright Vincotech 19 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
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figure 29. IGBT

Reverse bias safe operating area

I C = f(V CE)
80
IC (A)

IC MAX
60

Ic CHIP
40 MODULE
Ic

20
VCE MAX

0
0 200 400 600 800
V CE (V)

At
Tj = 125 °C
R gon = 16 Ω
R goff = 8Ω

copyright Vincotech 20 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Rectifier Diode Characteristics

figure 1. Rectifier Diode figure 2. Rectifier Diode

Typical diode forward current as Diode transient thermal impedance
a function of forward voltage as a function of pulse width
I F= f(V F) Z th(j-s) = f(t p)
50 101

Zth(j-s) (K/W)
IF (A)

40

100

30

20 D = 0,5
0,2
10-1
0,1
0,05
10 0,02
0,01
0,005
0,000
0
10-2 t p (s)
0 0,5 1 1,5 2 V F (V) 2,5
10-5 10-4 10-3 10-2 10-1 100 10110

At At
Tj = 25/125 °C D = tp/T
tp = 250 μs R th(j-s) = 1,51 K/W

figure 3. Rectifier Diode figure 4. Rectifier Diode

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
100 50
Ptot (W)

IF (A)

80 40

60 30

40 20

20 10

0 0
o
0 30 60 90 120 T s ( C) 150 0 30 60 90 120 T s ( o C) 150

At At
Tj = 150 ºC Tj = 150 ºC

copyright Vincotech 21 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
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Thermistor

figure 1. Thermistor
Typical PTC characteristic
as a function of temperature
R T = f(T )
PTC-typical temperature characteristic
2000
R (Ω)

1800

1600

1400

1200

1000
25 50 75 100 T (°C) 125

copyright Vincotech 22 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Switching Definitions Inverter

General conditions
Tj = 125 °C
R gon = 16 Ω
R goff = 8Ω

figure 1. IGBT figure 2. IGBT

Turn-off Switching Waveforms & definition of t doff, t Eoff Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off) (t E on = integrating time for E on)
150 200
%
% IC
125
tdoff VCE 150
100
VGE 90% VCE 90% VCE
75
100
IC
VGE
50
tEoff tdon
50
25
IC 1%
0 VGE10% IC10% VCE 3%
0
-25
VGE tEon
-50 -50
-0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 2,7 2,78 2,86 2,94 3,02 3,1
time (us) time(us)

V GE (0%) = 0 V V GE (0%) = 0 V
V GE (100%) = 15 V V GE (100%) = 15 V
V C (100%) = 300 V V C (100%) = 300 V
I C (100%) = 15 A I C (100%) = 15 A
t doff = 0,15 μs t don = 0,02 μs
t E off = 0,44 μs t E on = 0,20 μs

figure 3. IGBT figure 4. IGBT

Turn-off Switching Waveforms & definition of t f Turn-on Switching Waveforms & definition of t r
140 175
% %
Ic
120 150
fitted VCE
IC
100 125
IC 90% VCE
80 100
IC90%
IC 60%
60 75
tr
IC 40%
40 50

20 25
IC10%
IC10%
0
0
tf
-20
-25
0,05 0,1 0,15 0,2 0,25 0,3 0,35
2,8 2,83 2,86 2,89 2,92 2,95
time (us) time(us)

V C (100%) = 300 V V C (100%) = 300 V

I C (100%) = 15 A I C (100%) = 15 A
tf = 0,10 μs tr = 0,02 μs

copyright Vincotech 23 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
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Switching Definitions Inverter

figure 5. IGBT figure 6. IGBT

Turn-off Switching Waveforms & definition of t Eoff Turn-on Switching Waveforms & definition of t Eon
120 175
% Poff Eoff Pon
%
150
100

125
80 Eon
100
60
75

40
50

20
VGE 90% 25
IC 1% VGE 10% VCE 3%
0 0
tEoff
tEon
-20 -25
-0,2 -0,05 0,1 0,25 0,4 0,55 0,7 2,7 2,8 2,9 3 3,1 3,2
time (us) time(us)

P off (100%) = 4,50 kW P on (100%) = 4,50 kW

E off (100%) = 0,45 mJ E on (100%) = 0,50 mJ
t E off = 0,44 μs t E on = 0,20 μs

figure 7. FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100

trr
50

Vd
0
IRRM10%

fitted
-50
IRRM90%
IRRM100%

-100

-150
2,7 2,8 2,9 3 3,1 3,2 3,3 3,4
time(us)

V d (100%) = 300 V
I d (100%) = 15 A
I RRM (100%) = 11 A
t rr = 0,33 μs

copyright Vincotech 24 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Switching Definitions Inverter

figure 8. FWD figure 9. FWD

Turn-on Switching Waveforms & definition of t Qrr Turn-on Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr) (t Erec= integrating time for E rec)
150 125
% % Erec
Id
Qrr
100
100

75
tQrr
50 tErec

50

0
25
Prec

-50
0

-100 -25
2,6 2,8 3 3,2 3,4 3,6 3,8 2,6 2,8 3 3,2 3,4 3,6 3,8
time(us) time(us)

I d (100%) = 15 A P rec (100%) = 4,50 kW

Q rr (100%) = 1,45 μC E rec (100%) = 0,29 mJ
t Q rr = 0,71 μs t E rec = 0,71 μs

copyright Vincotech 25 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Switching Definitions PFC

General conditions
Tj = 125 °C
R gon = 16 Ω
R goff = 8Ω

figure 1. IGBT figure 2. IGBT

Turn-off Switching Waveforms & definition of t doff, t Eoff Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off) (t E on = integrating time for E on)
140 250
% %

120
tdoff IC
200
100
VGE 90% VCE 90%
80 150

IC VCE
60
100
40 tdon
tEoff VGE
20 IC 1% 50
VCE VCE3%
0 VGE10%
IC10%
0
-20
VGE tEon

-40 -50
-0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 2,9 2,95 3 3,05 3,1 3,15 3,2 3,25
time (us) time(us)

V GE (0%) = 0 V V GE (0%) = 0 V
V GE (100%) = 15 V V GE (100%) = 15 V
V C (100%) = 300 V V C (100%) = 300 V
I C (100%) = 15 A I C (100%) = 15 A
t doff = 0,22 μs t don = 0,02 μs
t E off = 0,33 μs t E on = 0,16 μs

figure 3. IGBT figure 4. IGBT

Turn-off Switching Waveforms & definition of t f Turn-on Switching Waveforms & definition of t r
140 250
% %
Ic
120
fitted VCE 200
IC
100
Ic 90%
150
80
VCE
Ic 60%
60 100
IC90%
Ic 40% tr
40
50

20
IC10%
Ic10%
0
0

tf
-20 -50
0,1 0,13 0,16 0,19 0,22 0,25 0,28 0,31 2,95 2,99 3,03 3,07 3,11 3,15 3,19
time (us) time(us)

V C (100%) = 300 V V C (100%) = 300 V

I C (100%) = 15 A I C (100%) = 15 A
tf = 0,04 μs tr = 0,03 μs

copyright Vincotech 26 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
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Switching Definitions PFC

figure 5. IGBT figure 6. IGBT

Turn-off Switching Waveforms & definition of t Eoff Turn-on Switching Waveforms & definition of t Eon
125 200
% Pon
%
Poff Eoff
100
150

75
Eon
100

50

50
25

U ge90% Ic 1% U ge10% Uce 3%

0
0
tEon
tEoff
-25 -50
-0,2 -0,08 0,04 0,16 0,28 0,4 0,52 2,8 2,9 3 3,1 3,2 3,3 3,4
time (us) time(us)

P off (100%) = 4,52 kW P on (100%) = 4,5177 kW

E off (100%) = 0,23 mJ E on (100%) = 0,51 mJ
t E off = 0,33 μs t E on = 0,16 μs

figure 7. FWD
Turn-off Switching Waveforms & definition of t rr
150
%
Id
100

trr
50

Ud
0
IRRM10%

fitted
-50

IRRM90%
-100
IRRM100%

-150
2,9 2,98 3,06 3,14 3,22 3,3 3,38
time(us)

V d (100%) = 300 V
I d (100%) = 15 A
I RRM (100%) = -15 A
t rr = 0,13 μs

copyright Vincotech 27 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Switching Definitions PFC

figure 8. FWD figure 9. FWD

Turn-on Switching Waveforms & definition of t Qrr Turn-on Switching Waveforms & definition of t Erec
(t Qrr= integrating time for Q rr) (t Erec= integrating time for E rec)
150 120
% % Erec
Id
Qrr 100
100

80 tErec
tQint
50
60

40
0
Prec
20

-50
0

-100 -20
2,9 3 3,1 3,2 3,3 3,4 2,9 3 3,1 3,2 3,3 3,4
time(us) time(us)

I d (100%) = 15 A P rec (100%) = 4,52 kW

Q rr (100%) = 1,11 μC E rec (100%) = 0,16 mJ
t Qint = 0,26 μs t E rec = 0,26 μs

copyright Vincotech 28 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Ordering Code & Marking

Version Ordering Code
with std lid (black V23990-K12-T-PM) V23990-K203-B10-/0A/-PM
with std lid (black V23990-K12-T-PM) and P12 V23990-K203-B10-/1A/-PM
with thin lid (white V23990-K13-T-PM) V23990-K203-B10-/0B/-PM
with thin lid (white V23990-K13-T-PM) and P12 V23990-K203-B10-/1B/-PM
VIN Date code Name&Ver UL Lot Serial
Text
VIN WWYY NNNNNNVV UL LLLLL SSSS

Type&Ver Lot number Serial Date code

Datamatrix
TTTTTTTVV LLLLL SSSS WWYY

Outline
PCB pad table
Pad X Y Function

1 15,93 -14,6 G5

2 15,93 -9,8 W

3 Not assembled

4 15,93 -0,2 +T

5 15,93 7,62 -T PCB pad table

6 15,93 12,62 G6 Pad X Y Function

7 15,93 15,8 -DC/W 20 -5,47 5,35 B

8 Not assembled 21 -7,17 12,62 GB

9 8,23 12,62 G4 22 -7,17 15,8 -B

10 8,23 15,8 -DC/V 23 Not assembled

11 7,73 -14,6 G3 24 -8,07 -9,8 +DC

12 7,73 -9,8 V 25 -15,02 -15,8 +RECT

13 Not assembled 26 Not assembled

14 Not assembled 27 -15,02 0 L2

15 0,53 12,62 G2 28 -15,02 9,8 L1

16 0,53 15,8 -DC/U 29 -15,02 15,8 -RECT

17 -0,47 -14,6 G1 Pad positions refers to center point.

18 -0,47 -9,8 U For more informations on pad design

19 -5,47 -5 +B please see package data

Pinout

Identification
ID Component Voltage Current Function Comment
T1-T6 IGBT 600 V 15 A Inverter Switch
T7 IGBT 650 V 30 A PFC Switch
D1-D6 FWD 600 V 10 A Inverter Diode
D7 FWD 650 V 30 A PFC Diode
D8, D9, D10, D12 Rectifier 1600 V 25 A Rectifier Diode
PTC1 PTC Thermistor

copyright Vincotech 29 19 Jul. 2016 / Revision 4

 V23990-K203-B10-PM
datasheet

Packaging instruction
Standard packaging quantity (SPQ) 198 >SPQ Standard <SPQ Sample

Handling instruction
Handling instructions for MiniSkiiP® 0 packages see vincotech.com website.

Package data
Package data for MiniSkiiP® 0 packages see vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.: Date: Modification: Pages

V23990-K203-B10-D4-14 19 Jul. 2016

DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.

copyright Vincotech 30 19 Jul. 2016 / Revision 4