V23990-P544-*2*-PM

datasheet

flow PIM 0 600 V / 15 A

Features flow 0 housing

● Vincotech clip-in housing
● Trench Fieldstop IGBT's for low saturation losses
● Optional w/o BRC

Target Applications
● Industrial drives 12 mm housing 17 mm housing
● Embedded drives

Schematic
Types
● V23990-P544-A28-PM
● V23990-P544-A29-PM
● V23990-P544-B28-PM
● V23990-P544-B128-PM
● V23990-P544-B129-PM
● V23990-P544-C29-PM
● V23990-P544-C28-PM

Maximum Ratings
T j = 25 °C, unless otherwise specified

Parameter Symbol Condition Value Unit

Rectifier Diode
Repetitive peak reverse voltage V RRM 1600 V

DC forward current I FAV T j = T jmax T s = 80 °C 35 A

Surge (non-repetitive) forward current I FSM 200 A

t p = 10 ms
T j = 150 °C
50 Hz half sine wave
I 2t-value I 2t 200 A2s

Power dissipation P tot T j = T jmax T s = 80 °C 46 W

Maximum Junction Temperature T jmax 150 °C

Inverter Switch
Collector-emitter break down voltage V CE 600 V

DC collector current IC T j = T jmax T s = 80 °C 21 A

Repetitive peak collector current I CRM t p limited by T jmax 45 A

Turn off safe operating area V CE ≤ 1200V, T j ≤ T op max 45 A

Power dissipation P tot T j = T jmax T s = 80 °C 51 W

Gate-emitter peak voltage V GE ±20 V

t SC T j ≤ 150 °C 6 µs
Short circuit ratings
V CC V GE = 15 V 360 V

Maximum Junction Temperature T jmax 175 °C

copyright Vincotech 1 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Maximum Ratings
T j = 25 °C, unless otherwise specified

Parameter Symbol Condition Value Unit

Inverter Diode
Peak Repetitive Reverse Voltage V RRM 600 V

DC forward current IF T j = T jmax T s = 80 °C 21 A

Repetitive peak forward current I FRM t p limited by T jmax 30 A

Power dissipation P tot T j = T jmax T s = 80 °C 44 W

Maximum Junction Temperature T jmax 175 °C

Brake Switch
Collector-emitter break down voltage V CE 600 V

DC collector current IC T j = T jmax T s = 80 °C 14 A

Repetitive peak collector current I CRM t p limited by T jmax 30 A

Turn off safe operating area V CE ≤ 1200V, T j ≤ T op max 30 A

Power dissipation P tot T j = T jmax T s = 80 °C 44 W

Gate-emitter peak voltage V GE ±20 V

t SC T j ≤ 150 °C 6 µs
Short circuit ratings
V CC V GE = 15 V 360 V

Maximum Junction Temperature T jmax 175 °C

Brake Diode
Peak Repetitive Reverse Voltage V RRM 600 V

DC forward current IF T j = T jmax T s = 80 °C 14 A

Repetitive peak forward current I FRM t p limited by T jmax 20 A

Power dissipation P tot T j = T jmax T s = 80 °C 32 W

Maximum Junction Temperature T jmax 175 °C

Thermal Properties
Storage temperature T stg -40…+125 °C

Operation temperature under switching condition T op -40…+(T jmax - 25) °C

Isolation Properties
Isolation voltage V isol t =2s DC voltage 4000 V

Creepage distance min 12,7 mm

Clearance 12 mm / 17 mm housing 9,7 / min 12,7 mm

Comparative tracking index CTI >200

copyright Vincotech 2 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Characteristic Values
Parameter Symbol Conditions Value Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A] T j [°C] Min Typ Max
V GS [V]
V DS [V] I D [A]

Rectifier Diode
25 0,8 1,26 1,45
Forward voltage VF 25 V
125 1,24
25 0,92
Threshold voltage (for power loss calc. only) V to 25 V
125 0,82
25 11
Slope resistance (for power loss calc. only) rt 25 mΩ
125 14
25 0,05
Reverse current Ir 1600 mA
145 1,1
phase-change
Thermal resistance junction to sink R th(j-s) material 1,61 K/W
λ = 3,4 W/mK

Inverter Switch

Gate emitter threshold voltage V GE(th) V CE = V GE 0,00021 25 5 5,8 6,5 V

25 1,1 1,61 1,9

Collector-emitter saturation voltage V CEsat 15 15 V
150 1,81
Collector-emitter cut-off current incl. Diode I CES 0 600 25 0,00085 mA

Gate-emitter leakage current I GES 20 0 25 300 nA

Integrated Gate resistor R gint none Ω

25 14
Turn-on delay time t d(on)
150 13
25 11
Rise time tr
150 13
ns
25 127
Turn-off delay time t d(off)
R goff = 8 Ω 150 146
+15/0 300 15
R gon = 16 Ω 25 86
Fall time tf
150 86
25 0,19
Turn-on energy loss E on
150 0,26
mWs
25 0,31
Turn-off energy loss E off
150 0,39

Input capacitance C ies 860

Output capacitance C oss f = 1 MHz 0 25 25 55 pF

Reverse transfer capacitance C rss 24

Gate charge QG 15 480 15 25 87 nC

phase-change
Thermal resistance junction to sink R th(j-s) material 1,88 K/W
λ = 3,4 W/mK

Inverter Diode
25 1,25 1,79 1,95
Diode forward voltage VF 15 V
150 1,67
25 15
Peak reverse recovery current I RRM A
150 17
25 100
Reverse recovery time t rr ns
150 184
25 0,52
Reverse recovered charge Q rr R gon = 16 Ω +15/0 300 15 µC
150 1,01
25 1448
Peak rate of fall of recovery current ( di rf/dt )max A/µs
150 773
25 0,10
Reverse recovered energy E rec mWs
150 0,21
phase-change
Thermal resistance junction to sink R th(j-s) material 2,67 K/W
λ = 3,4 W/mK

copyright Vincotech 3 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Characteristic Values
Parameter Symbol Conditions Value Unit
V r [V] I C [A]
V GE [V]
V CE [V] I F [A] T j [°C] Min Typ Max
V GS [V]
V DS [V] I D [A]

Brake Switch

Gate emitter threshold voltage V GE(th) V CE = V GE 0,00015 25 5 5,8 6,5 V

25 1,1 1,66 1,9

Collector-emitter saturation voltage V CEsat 15 10 V
150 1,87
Collector-emitter cut-off incl diode I CES 0 600 25 0,0006 mA

Gate-emitter leakage current I GES 20 0 25 300 nA

Integrated Gate resistor R gint none Ω

25 15
Turn-on delay time t d(on)
150 15
25 11
Rise time tr
150 14
ns
25 147
Turn-off delay time t d(off)
R goff = 16 Ω 150 163
+15/0 300 10
R gon = 32 Ω 25 101
Fall time tf
150 97
25 0,16
Turn-on energy loss E on
150 0,22
mWs
25 0,23
Turn-off energy loss E off
150 0,27
Input capacitance C ies 551

Output capacitance C oss f = 1 MHz 0 25 25 40 pF

Reverse transfer capacitance C rss 17

Gate charge QG 15 480 10 25 62 nC

phase-change
Thermal resistance junction to sink R th(j-s) material 2,18 K/W
λ = 3,4 W/mK

Brake Diode
25 1,25 1,67 1,95
Diode forward voltage VF 10 V
150 1,61

Reverse leakage current Ir 600 25 27 µA

25 10
Peak reverse recovery current I RRM A
150 10
25 149
Reverse recovery time t rr ns
150 208
25 0,46
Reverse recovered charge Q rr R gon = 32 Ω +15/0 300 10 µC
150 0,46
25 620
Peak rate of fall of recovery current ( di rf/dt )max A/µs
150 340
25 0,09
Reverse recovery energy E rec mWs
150 0,16
phase-change
Thermal resistance junction to sink R th(j-s) material 2,95 K/W
λ = 3,4 W/mK

Thermistor
Rated resistance R 25 22000 Ω

Deviation of R100 Δ R/R R 100 = 1484 Ω 100 -5 5 %

Power dissipation P 25 210 mW

Power dissipation constant 25 3,5 mW/K

B-value B (25/50) Tol. ±3% 25 K

B-value B (25/100) Tol. ±3% 25 4000 K

Vincotech NTC Reference 25 A

copyright Vincotech 4 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Inverter Characteristics

Figure 1 IGBT Figure 2 IGBT

Typical output characteristics Typical output characteristics
I C = f(V CE) I C = f(V CE)
40 40
IC (A)

IC (A)
30 30

20 20

10 10

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 µs tp = 250 µs
Tj = 25 °C Tj = 125 °C
V GE from 7 V to 17 V in steps of 1 V V GE from 7 V to 17 V in steps of 1 V

Figure 3 IGBT Figure 4 FWD

Typical transfer characteristics Typical diode forward current as
I C = f(V GE) a function of forward voltage
I F = f(V F)
18 60
IC (A)

IF (A)

15 50

12 40

9 30

Tj = Tjmax-25°C
6 20

Tj = Tjmax-25°C

3 10

Tj = 25°C Tj = 25°C

0 0
0 2 4 6 8 10 12 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5
V GE (V) V F (V)

At At
tp = 250 µs tp = 250 µs
V CE = 10 V

copyright Vincotech 5 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Inverter Characteristics

Figure 5 IGBT Figure 6 IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I C) E = f(R G)
0,8 1,0

E (mWs)
E (mWs)

0,8
Eoff High T Eon High T
0,6

Eon High T Eon Low T

Eoff Low T 0,6

0,4
Eon Low T Eoff High T
0,4
Eoff Low T

0,2
0,2

0,0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
Ic(A) Rg( Ω )

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 16 Ω IC = 15 A
R goff = 8 Ω

Figure 7 FWD Figure 8 FWD

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
E rec = f(I C) E rec = f(R G)
0,4 0,4
E (mWs)
E (mWs)

0,3 0,3

Erec Tj = Tjmax -25°C

Tj = Tjmax -25°C

0,2 0,2

Erec
Erec
Tj = 25°C

0,1 0,1
Tj = 25°C

Erec
0,0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) RG(Ω)

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 16 Ω IC = 15 A

copyright Vincotech 6 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Inverter Characteristics

Figure 9 IGBT Figure 10 IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I C) t = f(R G)
1 1

tdoff
t ( µs)

t ( µs)
tdoff

0,1 0,1
tf
tf tdon

tr

tdon
0,01 0,01

tr

0,001 0,001
0 5 10 15 20 25 30 0 20 40 60 80 100 120 140
Ic(A) Rg( Ω )

With an inductive load at With an inductive load at

Tj = 125 °C Tj = 125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 16 Ω IC = 15 A
R goff = 8 Ω

Figure 11 FWD Figure 12 FWD

Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
t rr = f(I C) t rr = f(R gon)
0,4 0,4
t rr( µs)
t rr( µs)

trr
0,3 0,3

Tj = Tjmax -25°C trr Tj = Tjmax -25°C

0,2 0,2

trr

Tj = 25°C
0,1 0,1

Tj = 25°C

trr

0,0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Rg( Ω )

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR = 300 V
V GE = 15 V IF = 15 A
R gon = 16 Ω V GE = 15 V

copyright Vincotech 7 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Inverter Characteristics

Figure 13 FWD Figure 14 FWD

Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Q rr = f(I C) Q rr = f(R gon)

1,5 1,5

Qrr( µC)
Qrr( µC)

Tj = Tjmax -25°C
Qrr
1,2 1,2

Tj = Tjmax -25°C
Qrr
0,9 0,9

Qrr
Tj = 25°C
0,6 0,6

Tj = 25°C

0,3 0,3

Qrr

0,0 0,0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Rg( Ω )
At
At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR = 300 V
V GE = 15 V IF = 15 A
R gon = 16 Ω V GE = 15 V

Figure 15 FWD Figure 16 FWD

Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
I RRM = f(I C) I RRM = f(R gon)
18 25
IrrM (A)

Tj = Tjmax -25°C
IrrM (A)

IRRM IRRM
15
20
Tj = 25°C
IRRM IRRM

12 Tj = Tjmax - 25°C
15

9
Tj = 25°C
10

5
3

0 0
0 5 10 15 20 25 30 0 30 60 90 120 150
I C (A) Rg( Ω )

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR = 300 V
V GE = 15 V IF = 15 A
R gon = 16 Ω V GE = 15 V

copyright Vincotech 8 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Inverter Characteristics

Figure 17 FWD Figure 18 FWD

Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(I C) dI 0/dt ,dI rec/dt = f(R gon)
2000 2000
direc / dt (A/µ s)

direc / dt (A/ µs)

dI0/dt dIrec/dt

dIrec/dt dI0/dt

1600 1600

1200 1200

800 800

400
400

0
0
0 30 60 90 120 150
0 5 10 15 20 25 I C (A) 30 Rg( Ω )

At At
Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V VR = 300 V
V GE = 15 V IF = 15 A
R gon = 16 Ω V GE = 15 V

Figure 19 IGBT Figure 20 FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
Z th(j-s) = f(t p) Z th(j-s) = f(t p)
101 101
Zth(j-s) (K/W)
Zth(j-s) (K/W)

100 100

D = 0,5 D = 0,5
0,2 0,2
10-1 10-1
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0,000 0,000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 100 t p (s) 10110 10-5 10-4 10-3 10-2 10-1 100 t p (s) 10110

At At
D = tp/T D = tp/T
R th(j-s) = 1,88 K/W R th(j-s) = 2,67 K/W

IGBT thermal model values FWD thermal model values

R (K/W) Tau (s) R (K/W) Tau (s)

6,56E-02 3,42E+00 5,08E-02 8,17E+00
2,26E-01 3,66E-01 1,65E-01 7,39E-01
8,74E-01 7,63E-02 7,58E-01 1,07E-01
3,72E-01 1,39E-02 7,19E-01 3,13E-02
1,73E-01 2,53E-03 4,65E-01 5,42E-03
1,70E-01 2,96E-04 2,28E-01 8,46E-04
2,82E-01 1,76E-04

copyright Vincotech 9 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Inverter Characteristics

Figure 21 IGBT Figure 22 IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I C = f(T s)
100 25

IC (A)
Ptot (W)

80 20

60 15

40 10

20 5

0 0
0 50 100 150 Ts(°C) 200 0 50 100 150 Ts(°C) 200

At At
Tj = 175 °C Tj = 175 °C
V GE = 15 V

Figure 23 FWD Figure 24 FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
70 25
Ptot (W)

IF (A)

60
20

50

15
40

30
10

20

5
10

0 0
0 50 100 150 Ts(°C) 200 0 50 100 150 Ts(°C) 200

At At
Tj = 175 °C Tj = 175 °C

copyright Vincotech 10 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Inverter Characteristics

Figure 25 IGBT Figure 26 IGBT

Safe operating area as a function Gate voltage vs Gate charge
of collector-emitter voltage
I C = f(V CE) V GE = f(Q g)
103 18

VGE (V)
IC (A)

16

10
2
120 V
14
480 V
10uS 12
100uS
1 1mS
10
10

DC
100mS
8
10mS
100

4
10-1

0
0 0 20 40 60 80 100 120
10 101 102 V CE (V) 103 Q g (nC)

At At
D = single pulse IC = 15 A
Ts = 80 ºC
V GE = 15 V
Tj = T jmax ºC

Figure 27 IGBT Figure 28 IGBT

Short circuit withstand time as a function of Typical short circuit collector current as a function of
gate-emitter voltage gate-emitter voltage
t sc = f(V GE) I SC = f(V GE)
14 250
tsc (µS)

Ic(sc)

12
200

10

150
8

6
100

50
2

0 0
10 11 12 13 14 V GE (V) 15 12 14 16 18 V GE (V) 20

At At
V CE = 600 V V CE ≤ 600 V
Tj ≤ 175 ºC Tj = 175 ºC

copyright Vincotech 11 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Inverter Characteristics
Figure 29 IGBT
Reverse bias safe operating area

I C = f(V CE)
35

IC MAX
IC (A)

30

25

20
Ic MODULE

Ic CHIP
15
VCE MAX

10

0
0 100 200 300 400 500 600 700
V CE (V)

At
Tj = T jmax-25 ºC

copyright Vincotech 12 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Brake Characteristics

Figure 1 IGBT Figure 2 IGBT

Typical output characteristics Typical output characteristics
I C = f(V CE) I C = f(V CE)
30 30
IC (A)

IC (A)
25 25

20 20

15 15

10 10

5 5

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 µs tp = 250 µs
Tj = 25 °C Tj = 125 °C
V GE from 7 V to 17 V in steps of 1 V V GE from 7 V to 17 V in steps of 1 V

Figure 3 IGBT Figure 4 FWD

Typical transfer characteristics Typical diode forward current as
I C = f(V GE) a function of forward voltage
I F = f(V F)
12 40
IC (A)

IF (A)

10

30

6 20

10

2
Tj = 25°C
Tj = Tjmax-25°C Tj = Tjmax-25°C
Tj = 25°C
0 0
0 3 6 9 12 0 1 2 3 4
V GE (V) V F (V)

At At
tp = 250 µs tp = 250 µs
V CE = 10 V

copyright Vincotech 13 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Brake Characteristics

Figure 5 IGBT Figure 6 IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(I C) E = f(R G)
0,6 0,8
E (mWs)

Eon

E (mWs)
0,5
Eon
Eon
0,6

Eoff
0,4
Eon

Eoff Eoff
0,4
0,3
Tj = Tjmax -25°C
Tj = Tjmax -25°C

0,2 Eoff
Tj = 25°C
0,2
Tj = 25°C

0,1

0,0
0,0 0 50 100 150 200 250 300
0 5 10 15 I C (A) 20 RG (Ω)

With an inductive load at With an inductive load at

Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 32 Ω IC = 10 A
R goff = 16 Ω

Figure 7 FWD Figure 8 FWD

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
E rec = f(I C) E rec = f(R G)
0,25 0,20
E (mWs)

E (mWs)

Erec
0,20
0,15

Tj = Tjmax - 25°C

0,15 Erec
Tj = Tjmax -25°C
0,10
Erec
0,10 Tj = 25°C
Tj = 25°C
Erec
0,05

0,05

0,00
0,00
0 50 100 150 200 250 300
0 5 10 15 Ic(A) 20 Rg( Ω )

With an inductive load at With an inductive load at

Tj = 25/125
25/125 °C Tj = 25/125
25/125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 32 Ω IC = 10 A

copyright Vincotech 14 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Brake Characteristics

Figure 9 IGBT Figure 10 IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(I C) t = f(R G)
1,00 1,00

t ( µs)
t ( µs)

tdoff
tdoff

tf
0,10 tf 0,10
tdon

tr

tdon 0,01
0,01

tr

0,00
0,00
0 50 100 150 200 250 300
0 5 10 15 Ic(A) 20 Rg( Ω )

With an inductive load at With an inductive load at

Tj = 25/125 °C Tj = 25/125 °C
V CE = 300 V V CE = 300 V
V GE = 15 V V GE = 15 V
R gon = 32 Ω IC = 10 A
R goff = 16 Ω

Figure 11 IGBT Figure 12 FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
Z th(j-s) = f(t p) Z th(j-s) = f(t p)
101 101
Zth(j-s) (K/W)
Zth(j-s) (K/W)

100 100

D = 0,5 D = 0,5
10-1 0,2 10-1 0,2
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0,000 0,000
10-2 10-2
10-5 10-4 10-3 10-2 10-1 100 t p (s) 101 10 10-5 10-4 10-3 10-2 10-1 100 t p (s) 101 10

At D = tp/T At D = tp/T

R th(j-s) = 2,18 K/W R th(j-s) = 2,94 K/W

IGBT thermal model values FWD thermal model values

R (K/W) Tau (s) R (K/W) Tau (s)

6,23E-02 3,85E+00 1,11E-01 4,12E+00
2,40E-01 3,55E-01 3,47E-01 2,83E-01
1,02E+00 7,88E-02 1,28E+00 6,32E-02
3,88E-01 1,12E-02 4,92E-01 1,17E-02
2,21E-01 2,12E-03 3,46E-01 1,99E-03
2,50E-01 2,46E-04 3,70E-01 2,99E-04

copyright Vincotech 15 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Brake Characteristics

Figure 13 IGBT Figure 14 IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I C = f(T s)
100 20
Ptot (W)

IC (A)
80
15

60

10

40

5
20

0 0
0 50 100 150 Ts(°C) 200 0 50 100 150 Ts(°C) 200

At At
Tj = 175 ºC Tj = 175 ºC
V GE = 15 V

Figure 15 FWD Figure 16 FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
60 15
Ptot (W)

IF (A)

50
12

40

30

20

3
10

0 0
0 50 100 150 Ts(°C) 200 0 50 100 150 Ts(°C) 200

At At
Tj = 175 ºC Tj = 175 ºC

copyright Vincotech 16 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Rectifier Characteristics

Figure 1 Diode Figure 2 Diode

Typical diode forward current as Diode transient thermal impedance
a function of forward voltage as a function of pulse width
I F= f(V F) Z th(j-s) = f(t p)
100 10
1

Zth(j-s) (K/W)
IF (A)

80

0
10
60

40 D = 0,5
0,2
-1
10 0,1
Tj = Tjmax-25°C
0,05
20
0,02
0,01
Tj = 25°C 0,005
0,000
0
0,0 0,5 1,0 1,5 2,0 10-2
V F (V) t p (s)
10-5 10-4 10-3 10-2 10-1 100 10110

At At
tp = 250 µs D = tp/T
R th(j-s) = 1,51 K/W

Diode thermal model values

R (K/W) Tau (s)

3,85E-02 6,40E+00
2,39E-01 5,50E-01
7,82E-01 1,14E-01
3,05E-01 2,08E-02
1,45E-01 2,53E-03

Figure 3 Diode Figure 4 Diode

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
P tot = f(T s) I F = f(T s)
100 40
IF (A)
Ptot (W)

35

80
30

25
60

20

40
15

10
20

0 0
0 30 60 90 120 Ts(°C) 150 0 30 60 90 120 Ts(°C) 150

At At
Tj = 150 ºC Tj = 150 ºC

copyright Vincotech 17 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Thermistor

Figure 1 Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
24000
R (Ω)

20000

16000

12000

8000

4000

0
25 50 75 100 T(°C) 125

copyright Vincotech 18 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Switching Definitions Inverter

General conditions
Tj = 125 °C
R gon = 32 Ω
R goff = 16 Ω

Figure 1 IGBT Figure 2 IGBT

Turn-off Switching Waveforms & definition of t doff, t Eoff Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off) (t E on = integrating time for E on)
125 200
tdoff
%
%
IC
100
160
VGE 90% VCE 90%

75
VGE IC 120
VCE
50
tEoff
80
VGE
25 tdon
VCE
IC 1% 40
0
VCE 3%
VGE 10% IC 10%
-25 0
tEon

-50
-40
-0,1 0 0,1 0,2 0,3 0,4 0,5
time(µs) 2,9 3 3,1 3,2 time(µs) 3,3

V GE (0%) = 0 V V GE (0%) = 0 V
V GE (100%) = 15 V V GE (100%) = 15 V
V C (100%) = 300 V V C (100%) = 300 V
I C (100%) = 15 A I C (100%) = 15 A
t doff = 0,21 µs t don = 0,02 µs
t E off = 0,44 µs t E on = 0,20 µs

Figure 3 IGBT Figure 4 IGBT

Turn-off Switching Waveforms & definition of t f Turn-on Switching Waveforms & definition of t r
150 200

% %

fitted VCE
IC 150
100
IC 90% VCE
100 IC 90%
IC 60%
50 tr
IC 40%
50

tf IC10%
0 Ic IC 10%
0

-50 -50
0,1 0,15 0,2 0,25 0,3 0,35 0,4 3 3,05 3,1 3,15 3,2
time(µs) time(µs)

V C (100%) = 300 V V C (100%) = 300 V

I C (100%) = 15 A I C (100%) = 15 A
tf = 0,09 µs tr = 0,02 µs

copyright Vincotech 19 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Switching Definitions Inverter

Figure 5 IGBT Figure 6 IGBT

Turn-off Switching Waveforms & definition of t Eoff Turn-on Switching Waveforms & definition of t Eon
125 200
% IC 1% %
Poff Pon
100
150
Eoff

75
Eon
100

50

50
25

VGE 90% VGE 10% VCE 3%

0 0
tEon
tEoff

-25
-50
-0,1 0 0,1 0,2 0,3 0,4 0,5
time(µs) 2,9 3 3,1 3,2 time(µs) 3,3

P off (100%) = 4,47 kW P on (100%) = 4,47 kW

E off (100%) = 0,40 mJ E on (100%) = 0,34 mJ
t E off = 0,44 µs t E on = 0,20 µs

Figure 7 FWD
Turn-off Switching Waveforms & definition of t rr
120
Id

80

trr

40

%
Vd
0 fitted

IRRM 10%

-40

-80
IRRM 90%

IRRM 100%

-120
2,9 3 3,1 3,2 3,3 3,4 3,5
time(µs)

V d (100%) = 300 V
I d (100%) = 15 A
I RRM (100%) = 14 A
t rr = 0,21 µs

copyright Vincotech 20 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Switching Definitions Inverter

Figure 8 FWD Figure 9 FWD

Turn-on Switching Waveforms & definition of t Qrr Turn-on Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr) (t Erec= integrating time for E rec)
150 125

% % Erec
Id 100
100

tQrr 75 tErec
50

50
0
Qrr

25
-50 Prec

-100
2,9 3,1 3,3 3,5 3,7
-25
2,9 3,1 3,3 3,5 3,7
time(us) time(µs)

I d (100%) = 15 A P rec (100%) = 4,47 kW

Q rr (100%) = 1,01 µC E rec (100%) = 0,20 mJ
t Q rr = 0,49 µs t E rec = 0,49 µs

copyright Vincotech 21 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Ordering Code and Marking - Outline - Pinout

Ordering Code & Marking
Version Ordering Code
without thermal paste 12mm housing V23990-P544-A28-PM
with thermal paste 12mm housing V23990-P544-A28-/3/-PM
without thermal paste 17mm housing V23990-P544-A29-PM
without thermal paste 12mm housing 1 phase rectifier V23990-P544-B28-PM
with thermal paste 12mm housing 1 phase rectifier V23990-P544-B28-/3/-PM
with thermal paste 12mm housing 1 phase rectifier V23990-P544-B128-/3/-PM
without thermal paste 17mm housing 1phase rectifier V23990-P544-B129-PM
without thermal paste 17mm housing without brake V23990-P544-C29-PM
without thermal paste 12mm housing V23990-P544-C28-PM
with thermal paste 12mm housing V23990-P544-C28-/3/-PM

VIN Date code Name&Ver UL Lot Serial

Text
VIN WWYY NNNNNNVV UL LLLLL SSSS

Name&Ver Lot number Serial Date code

Datamatrix
NNNNNNVV LLLLL SSSS WWYY

Outline
Pin table
Pin X Y Function
1 25,5 2,7 NTC1
2 25,5 0 NTC2
3 22,8 0 DC- 17mm housing
4 20,1 0 BRCG
5 16,2 0 BRCE
6 13,5 0 G6
7 10,8 0 E6
8 8,1 0 G5
9 5,4 0 E5
10 2,7 0 G4 12mm housing
11 0 0 E4
12 0 19,8 G1
13 0 22,5 U
14 7,5 19,8 G2
15 7,5 22,5 V Pinout variation
16 15 19,8 G3 Module subtype Not assebled pins
17 15 22,5 W V23990-P544-A28-PM -
18 22,8 22,5 INV+ V23990-P544-A29-PM -
19 25,5 22,5 DC+ V23990-P544-B28-PM 21
20 33,5 22,5 BRC+ V23990-P544-B128-PM 23
21 33,5 15 L1 V23990-P544-B129-PM 23
22 33,5 7,5 L2 V23990-P544-C28-PM 4, 5, 20
23 33,5 0 L3 V23990-P544-C29-PM 4, 5, 20

copyright Vincotech 22 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Ordering Code and Marking - Outline - Pinout

Pinout

Identification
ID Component Voltage Current Function Comment
D7,D8,D9,D10,D11,D12 Diode 1600 V 25 A Rectifier Diode
T1,T2,T3,T4,T5,T6 IGBT 600 V 15 A Inverter Switch
D1,D2,D3,D4,D5,D6 FWD 600 V 15 A Inverter Diode
T7 IGBT 600 V 10 A Brake Switch
D13 FWD 600 V 10 A Brake Diode
NTC NTC Thermistor

copyright Vincotech 23 27 Aug. 2019 / Revision 8

 V23990-P544-*2*-PM
datasheet

Packaging instruction
Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample

Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.

Package data
Package data for flow 0 packages see vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.: Date: Modification: Pages

V23990-P544-x2x-D8-14 27 Aug. 2019 P544-C28 added 1,22

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good
faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur.
Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation,
guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same
will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired
results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant
injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the
life support device or system, or to affect its safety or effectiveness.

copyright Vincotech 24 27 Aug. 2019 / Revision 8