V23990-P829-F10*F108-PM

datasheet

flow PACK 1 3rd gen 1200 V / 50 A

Features flow 1 housing

● Compact flow 1 housing
● Trench Fieldstop IGBT4 Technology
● Compact and Low Inductance Design
● Built-in NTC
17 mm housing 12 mm housing

Target Applications Schematic

● Motor Drive
● Power Generation
● UPS

Types

● V23990-P829-F10-PM
● V23990-P829-F108-PM

Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter Symbol Condition Value Unit

Inverter Transistor

Collector-emitter break down voltage VCE 1200 V

Th=80°C 45
DC collector current IC Tj=Tjmax A
Tc=80°C

Repetitive peak collector current ICpulse tp limited by Tjmax 150 A

Th=80°C 103
Power dissipation Ptot Tj=Tjmax W
Tc=80°C

Gate-emitter peak voltage VGE ±20 V

tSC Tj≤150°C 10 µs
Short circuit ratings
VCC VGE=15V 800 V

Maximum Junction Temperature Tjmax 175 °C

Inverter Diode

Peak Repetitive Reverse Voltage VRRM Tj=25°C 1200 V

Th=80°C 44
DC forward current IF Tj=Tjmax A
Tc=80°C

Repetitive peak forward current IFRM tp limited by Tjmax 100 A

Th=80°C 76
Power dissipation Ptot Tj=Tjmax W
Tc=80°C

Maximum Junction Temperature Tjmax 175 °C

Thermal Properties

Storage temperature Tstg -40…+125 °C

Operation temperature under switching condition Top -40…+150 °C

copyright Vincotech 1 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
datasheet

Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter Symbol Condition Value Unit

Insulation Properties

Insulation voltage Vis t=2s DC voltage 4000 V

Creepage distance min 12,7 mm

17 mm housing min 12,7

Clearance mm
12 mm housing min 8,06

copyright Vincotech 2 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
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Characteristic Values

Parameter Symbol Conditions Value Unit

Vr [V] or IC [A] or
VGE [V] or
VCE [V] or IF [A] or Tj Min Typ Max
VGS [V]
VDS [V] ID [A]

Inverter Transistor
Tj=25°C 5,00 5,80 6,50
Gate emitter threshold voltage VGE(th) VCE=VGE 0,0017 V
Tj=150°C
Tj=25°C 1,60 1,93 2,30
Collector-emitter saturation voltage VCE(sat) 15 50 V
Tj=150°C 2,35
Tj=25°C 0,02
Collector-emitter cut-off current incl. Diode ICES 0 1200 mA
Tj=150°C
Tj=25°C 650
Gate-emitter leakage current IGES 20 0 nA
Tj=150°C
Integrated Gate resistor Rgint 4 Ω
Tj=25°C 96
Turn-on delay time td(on)
Tj=150°C 101
Tj=25°C 17
Rise time tr
Tj=150°C 24
ns
Tj=25°C 214
Turn-off delay time td(off)
Rgoff=8 Ω Tj=150°C 281
±15 600 50
Rgon=8 Ω Tj=25°C 87
Fall time tf
Tj=150°C 122
Tj=25°C 2,70
Turn-on energy loss per pulse Eon
Tj=150°C 4,21
mWs
Tj=25°C 2,74
Turn-off energy loss per pulse Eoff
Tj=150°C 4,53
Input capacitance Cies 2770

Output capacitance Coss f=1MHz 0 25 Tj=25°C 205 pF

Reverse transfer capacitance Crss 160

Gate charge QGate Vcc=960 ±15 50 Tj=25°C 240 nC

Thermal grease
Thermal resistance chip to heatsink RthJH thickness≤50um 0,92 K/W
λ = 1 W/mK

Inverter Diode
Tj=25°C 1,4 1,83 2,3
Diode forward voltage VF 50 V
Tj=150°C 1,80
Tj=25°C 81
Peak reverse recovery current IRRM A
Tj=150°C 85
Tj=25°C 139
Reverse recovery time trr ns
Tj=150°C 316
Tj=25°C 4,80
Reverse recovered charge Qrr Rgon=8 Ω ±15 600 50 nC
Tj=150°C 9,71
di(rec)max Tj=25°C 4803
Peak rate of fall of recovery current A/µs
/dt Tj=150°C 1209
Tj=25°C 1,79
Reverse recovered energy Erec mWs
Tj=150°C 3,97
Thermal grease
Thermal resistance chip to heatsink RthJH thickness≤50um 1,26 K/W
λ = 1 W/mK

Thermistor

Rated resistance R Tj=25ºC 4,7 kΩ

Deviation of R100 ∆R/R R100=401 Ω Tj=100ºC -12,4 12,4 %

Power dissipation P Tj=25ºC 210 mW

Power dissipation constant Tj=25ºC 3,5 mW/K

B-value B(25/50) Tj=25ºC 3590 K

B-value B(25/100) Tj=25ºC 3650 K

Vincotech NTC Reference D

copyright Vincotech 3 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
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Output Inverter

Figure 1 Output inverter IGBT Figure 2 Output inverter IGBT

Typical output characteristics Typical output characteristics
IC = f(VCE) IC = f(VCE)
150 150
IC (A)

IC (A)
120 120

90 90

60 60

30 30

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 µs tp = 250 µs
Tj = 25 °C Tj = 150 °C
VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V

Figure 3 Output inverter IGBT Figure 4 Output inverter FWD

Typical transfer characteristics Typical diode forward current as
Ic = f(VGE) a function of forward voltage
IF = f(VF)
50 150
IC (A)

Tj = 25°C
IF (A)

40 120

30 90

Tj = Tjmax-25°C

Tj = Tjmax-25°C 60
20

Tj = 25°C
30
10

0
0
0 1 2 3 4
0 2 4 6 8 10 V GE (V) 12 V F (V)

At At
tp = 250 µs tp = 250 µs
VCE = 10 V

copyright Vincotech 4 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
datasheet

Output Inverter

Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(Ic) E = f(RG)
10 10

E (mWs)
E (mWs)

Eon Eon
8 8

Eoff
Eon
6 6

Eon:
Eoff Eoff
4 4

Eoff

2 2

0
0
0 20 40 60 80 I C (A) 100
0 10 20 30 R G( Ω ) 40

With an inductive load at With an inductive load at

Tj = 25/150 °C Tj = 25/150 °C
VCE = 600 V VCE = 600 V
VGE = ±15 V VGE = ±15 V
Rgon = 8 Ω IC = 50 A
Rgoff = 8 Ω

Figure 7 Output inverter IGBT Figure 8 Output inverter IGBT

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
Erec = f(Ic) Erec = f(RG)
6 5
E (mWs)

E (mWs)

Erec
5
4

Erec
4

Erec 2

2
Erec

1
1

0 0
0 20 40 60 80 I C (A) 100 0 8 16 24 32 R G( Ω ) 40

With an inductive load at With an inductive load at

Tj = 25/150 °C Tj = 25/150 °C
VCE = 600 V VCE = 600 V
VGE = ±15 V VGE = ±15 V
Rgon = 8 Ω IC = 50 A

copyright Vincotech 5 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
datasheet

Output Inverter

Figure 9 Output inverter IGBT Figure 10 Output inverter IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(IC) t = f(RG)
1 1

t ( µs)
t ( µs)

tdoff
tdoff tdon
tf
tf
0,1 0,1

tdon
tr
tr

0,01 0,01

0,001 0,001
0 20 40 60 80 I C (A) 100 0 8 16 24 32 RG (Ω ) 40

With an inductive load at With an inductive load at

Tj = 150 °C Tj = 150 °C
VCE = 600 V VCE = 600 V
VGE = ±15 V VGE = ±15 V
Rgon = 8 Ω IC = 50 A
Rgoff = 8 Ω

Figure 11 Output inverter FWD Figure 12 Output inverter FWD

Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
trr = f(Ic) trr = f(Rgon)
0,4 0,7
t rr( µs)

trr
t rr( µs)

trr
0,6

0,3
0,5

0,4

0,2
trr
0,3
trr

0,2
0,1

0,1

0 0
0 20 40 60 80 100
I C (A) 0 8 16 24 32 R Gon ( Ω ) 40

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 600 V VR = 600 V
VGE = ±15 V IF = 50 A
Rgon = 8 Ω VGE = ±15 V

copyright Vincotech 6 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
datasheet

Output Inverter

Figure 13 Output inverter FWD Figure 14 Output inverter FWD

Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Qrr = f(Ic) Qrr = f(Rgon)

14 12
Qrr ( µC)

Qrr ( µC)
Qrr
12 Qrr
10

10
8

6 Qrr
Qrr
4
4

2
2

0 0
I C (A) R Gon ( Ω) 40
At 0 20 40 60 80 100 0 8 16 24 32

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 600 V VR = 600 V
VGE = ±15 V IF = 50 A
Rgon = 8 Ω VGE = ±15 V

Figure 15 Output inverter FWD Figure 16 Output inverter FWD

Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
IRRM = f(Ic) IRRM = f(Rgon)
120 150
IrrM (A)

IrrM (A)

IRRM
100
120
IRRM
80

90

60

60

40 IRRM

IRRM
30
20

0 0
0 20 40 60 80 I C (A) 100 0 8 16 24 32 R Gon ( Ω ) 40

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 600 V VR = 600 V
VGE = ±15 V IF = 50 A
Rgon = 8 Ω VGE = ±15 V

copyright Vincotech 7 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
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Output Inverter

Figure 17 Output inverter FWD Figure 18 Output inverter FWD

Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon)
6000 14000
dI0/dt dI0/dt
direc / dt (A/ µs)

direc / dt (A/ µs)

dIrec/dt dIrec/dt
12000
5000

10000
4000

8000

3000

6000

2000
4000

1000
2000

0 0
0 20 40 60 80 I C (A) 100 0 8 16 24 32 R Gon ( Ω) 40

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 600 V VR = 600 V
VGE = ±15 V IF = 50 A
Rgon = 8 Ω VGE = ±15 V

Figure 19 Output inverter IGBT Figure 20 Output inverter FWD

IGBT transient thermal impedance FWD transient thermal impedance
as a function of pulse width as a function of pulse width
ZthJH = f(tp) ZthJH = f(tp)
101 101
ZthJH (K/W)

ZthJH (K/W)

0
100 10

D = 0,5 D = 0,5
0,2 0,2
10-1 10-1
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0.000 0.000
10-2 10-2
t p (s) 10
-5
10
-4
10
-3
10
-2
10
-1
10
0 t p (s) 1
10 10
10-5 10-4 10-3 10-2 10-1 100 10110

At At
D= tp / T D= tp / T
RthJH = 0,92 K/W RthJH = 1,26 K/W

IGBT thermal model values FWD thermal model values

R (K/W) Tau (s) R (K/W) Tau (s)

0,07 2,9E+00 0,02 1,3E+01
0,24 4,7E-01 0,14 1,1E+00
0,45 1,2E-01 0,62 1,6E-01
0,12 1,5E-02 0,29 3,5E-02
0,04 9,2E-04 0,12 6,7E-03
0,06 5,2E-04

copyright Vincotech 8 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
datasheet

Output Inverter

Figure 21 Output inverter IGBT Figure 22 Output inverter IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IC = f(Th)
200 60
Ptot (W)

IC (A)
50
160

40

120

30

80

20

40
10

0 0
0 50 100 150 Th ( o C) 200 0 50 100 150 Th ( o C) 200

At At
Tj = 175 °C Tj = 175 °C
VGE = 15 V

Figure 23 Output inverter FWD Figure 24 Output inverter FWD

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
150 60
IF (A)
Ptot (W)

50
120

40

90

30

60

20

30
10

0 0
0 50 100 150 Th ( o C) 200 0 50 100 150 Th ( o C) 200

At At
Tj = 175 °C Tj = 175 °C

copyright Vincotech 9 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
datasheet

Output Inverter

Figure 25 Output inverter IGBT Figure 26 Output inverter IGBT

Safe operating area as a function Gate voltage vs Gate charge
of collector-emitter voltage
IC = f(VCE) VGE = f(Qg)
103

VGE (V)
240V
IC (A)

15

2 100uS
10

100mS 1mS

10mS 960V
10

101
DC

5
0
10

0
10-1
10
0
102 103 0 50 100 150 200 250 300
101 V CE (V) Qg (nC)

At At
D= single pulse IC = 50 A
Th = 80 ºC
VGE = ±15 V
Tj = Tjmax ºC

copyright Vincotech 10 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
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Thermistor

Figure 1 Thermistor
Typical NTC characteristic
as a function of temperature
RT = f(T)

5000
NTC-typical temperature characteristic
R/Ω

4000

3000

2000

1000

0
25 50 75 100
T (°C) 125

copyright Vincotech 11 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
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Switching Definitions Output Inverter

General conditions
Tj = 150 °C
Rgon = 8Ω
Rgoff = 8Ω

Figure 1 Output inverter IGBT Figure 2 Output inverter IGBT

Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff) (tEon = integrating time for Eon)
140 300

Ic
120 tdoff 260
Uce
100
Uce 90% 220
Uge 90%
80
180
60 Ic %
% 140
tEoff
40
Uce
100
20
Ic 1% tdon Uge
0 60
Uge
Ic10%
-20 20
Uge10% Uce3%
tEon
-40
-20
-0,2 0 0,2 0,4 0,6 0,8 1
time (us) 2,8 2,9 3 3,1 3,2 3,3 3,4 3,5
time(us)

VGE (0%) = -15 V VGE (0%) = -15 V

VGE (100%) = 15 V VGE (100%) = 15 V
VC (100%) = 600 V VC (100%) = 600 V
IC (100%) = 50 A IC (100%) = 50 A
tdoff = 0,28 µs tdon = 0,10 µs
tEoff = 0,70 µs tEon = 0,33 µs

Figure 3 Output inverter IGBT Figure 4 Output inverter IGBT

Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr
140 300

120 fitted
Uce 260

100 220
Ic Ic 90%
80 180

% 60 Ic 60% % 140

40 Ic 40% 100 Uce Ic90%

20 60 tr
Ic10%
0 tf 20
Ic Ic10%

-20 -20
0,2 0,25 0,3 0,35 0,4 0,45 0,5 2,9 3 3,1 3,2 3,3 3,4
time (us) time(us)

VC (100%) = 600 V VC (100%) = 600 V

IC (100%) = 50 A IC (100%) = 50 A
tf = 0,12 µs tr = 0,02 µs

copyright Vincotech 12 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
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Switching Definitions Output Inverter

Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT

Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon
120 220

Eoff Pon
100 Poff 180

80
140

60
Eon

% 100
%
40

60
20

20 Uge10%
Uce3%
0
tEon
Uge90%
tEoff Ic 1%
-20 -20
-0,2 0 0,2 0,4 0,6 0,8 1 2,9 3 3,1 3,2 3,3 3,4 3,5
time (us) time(us)

Poff (100%) = 30,10 kW Pon (100%) = 30,10 kW

Eoff (100%) = 4,53 mJ Eon (100%) = 4,21 mJ
tEoff = 0,70 µs tEon = 0,33 µs

Figure 7 Output inverter FWD Figure 8 Output inverter IGBT

Gate voltage vs Gate charge (measured) Turn-off Switching Waveforms & definition of trr
20 120
Id
15 80
trr

10 40
fitted

5 0 Ud
Uge (V)

0 % -40 IRRM10%

-5 -80

-10 -120
IRRM90%
-15 -160
IRRM100%

-20 -200
-250 -100 50 200 350 500 2,9 3,1 3,3 3,5 3,7
Qg (nC) time(us)

VGEoff = -15 V Vd (100%) = 600 V

VGEon = 15 V Id (100%) = 50 A
VC (100%) = 600 V IRRM (100%) = -85 A
IC (100%) = 50 A trr = 0,32 µs
Qg = 317 nC

copyright Vincotech 13 19 Nov 2014 / Revision: 4

 V23990-P829-F10*F108-PM
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Switching Definitions Output Inverter

Figure 9 Output inverter FWD Figure 10 Output inverter FWD

Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec
(tQrr = integrating time for Qrr) (tErec= integrating time for Erec)
150 120

Id Qrr Erec
100 100

50 80
tQint

0 60
% %
tErec
-50 40

-100 20

Prec
-150 0

-200 -20
2,9 3,1 3,3 3,5 3,7 3,9 4,1 2,9 3,1 3,3 3,5 3,7 3,9 4,1
time(us) time(us)

Id (100%) = 50 A Prec (100%) = 30,10 kW

Qrr (100%) = 9,71 µC Erec (100%) = 3,97 mJ
tQint = 0,80 µs tErec = 0,80 µs

copyright Vincotech 14 19 Nov 2014 / Revision: 4

 V23990-P825-F10-PM
datasheet

Ordering Code and Marking - Outline - Pinout

Ordering Code & Marking

Version Ordering Code in DataMatrix as in packaging barcode as
without thermal paste 17mm housing V23990-P829-F10-PM P829F10 P829-F10
without thermal paste 12mm housing V23990-P829-F108-PM P829F108 P829-F108

Outline
Pin table
Pin X Y
1 52,6 0
2 49,9 0
3 42,65 0
4 39,65 0
5 35,15 2,8
6 28,4 0
7 24 2,8
8 21 0
9 12,2 0
10 9,2 0
11 2,7 0
12 0 0
13 0 14,65
14 2,7 14,65
15 0 28,6
16 2,7 28,6
17 5,4 28,6
18 9,6 28,6
19 12,6 28,6
20 19,6 28,6
21 22,3 28,6
22 25 28,6
23 29,7 28,6
24 32,7 28,6
25 39,7 28,6
26 42,7 28,6
27 42,2 28,6
28 49,9 28,6
29 52,6 28,6
30 52,6 14,56
31 49,9 14,56

Pinout

copyright Vincotech 15 19 Nov 2014 / Revision: 3

 V23990-P829-F10*F108-PM
datasheet

DISCLAIMER

The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.

As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.

copyright Vincotech 16 19 Nov 2014 / Revision: 4