SCHOOL OF ELECTRONICS ENGINEERING

B.TECH. ELECTRONICS AND COMMUNICATION ENGINEERING

BECE101P – Basic Electronics Lab
Question Set
1. i. Design and simulate a circuit that permits electric current to flow in only one direction, where the positive
terminal is connected to the anode side and the negative terminal is connected to the Cathode side. Assume
R=2.5KΩ and record the waveform.

ii. Design and implement the Boolean function F = B′C′ + A′C′ + A′B′ using logic gates.

2. i. Design and simulate a circuit which permits electrics current to flow in only one direction. The
semiconductor device positive terminal is connected to the cathode side and the negative terminal is connected
to the anode side. Assume R=2KΩ and record the waveform.

ii. Design and implement the Boolean function F = (A + B) (A’ + C)(B + D) using logic gates.

3. i. Design and simulate the circuit which permits current to flow in forward direction and also in reverse
direction when the voltage is above breakdown voltage. Assume the breakdown voltage is 8.2V and R = 2KΩ.
Record the output waveform.

ii. Design and implement the Boolean function F = (A + C) (B′ + D′) (A′ + B′ + C′) using logic gates.

4. i. Design and simulate a circuit which converts half cycle of alternating current (AC) to direct current
(DC). Record the waveforms and estimate the ripple factor.

ii. Design and implement the Boolean function F = (A + C) (A + D′) (A + B + C′) using logic gates.

5. i. Design and simulate a circuit that converts both half cycles of alternating current (AC) to direct current (DC).
Also, use the filter(C= 30µF) to record the waveforms again and compare both the results with necessary
calculations of ripple factor, Vpractical and Vtheoretical.

ii. Suggest a suitable sensor to detect the tensile and compressive strain experienced by the device under test. Also,
observe its characteristics by performing all levels of measurement for Half Bridge having adjacent arms with
following specifications: Material: Copper; Input voltage: 10 V; Resistance: 350 ohm; Gauge factor: 2

6. i. Design and simulate a voltage regulator circuit having variation in input voltage from 10V to 25V. Record the
waveform and calculate the respective percentage of regulation.

ii. Identify a sensor which has “three coils symmetrically spaced along an insulated tube. The central coil is primary
coil and the other two are secondary coils. Secondary coils are connected in series in such a way that their outputs
oppose each other. A magnetic core attached to the element of which displacement is to be monitored is placed
inside the insulated tube”. Study the characteristics of the sensor which is generally used as an absolute position
sensor.

7. i. Design and simulate a voltage regulator circuit having variation in load resistance from 5Ω to 5KΩ. Record the
waveform and calculate the respective percentage of regulation.

ii. Simplify and implement the given Boolean function Y = (AB+AC)’ + A’B’C.

8. i. Study the input and output characteristics of NPN transistor where emitter is common. Assume RC=5KΩ and
RB =300KΩ.

ii. Calculate Input impedance, output admittance, forward current and voltage gain.

9. i. Design a N-type Metal Oxide Semiconductor Field Effect Transistor in its common source configuration, and
observe its input and output characteristics.

ii. Analyse the above plots, and identify the possible regions of operation of the device.

iii. Estimate the threshold voltage of the device and interpret on what values of V ds, the device enters into a
saturated state.

10. i. Design and simulate a Common Emitter amplifier circuit. Assume R1 = 45KΩ, R2= 10KΩ, Rc = 2.5KΩ, RE=
580Ω and RL=20K Ω. Perform the transient analysis and AC analysis.

ii. Design and implement the Boolean function F = (A’ + C) (B + D)’ using logic gates.

16. i. Construct a circuit to verify the Forward bias and Reverse bias characteristics of the given P-N Junction
diode. Also, calculate the static and dynamic resistance of the diode under Forward Bias Condition.

ii. Apply De Morgan’s law to the following expression [(A+B+C) D]’. Write the truth table and verify the output.
Draw the logic gate diagram for the simplified expression.

17. i. Design a single stage BJT amplifier for VCC = 10V, VBE = 0.7, β = 100, gain = 20 and RC = 2.7KΩ.

ii. Perform the transient and frequency response analysis.

iii. Record the waveforms and determine the bandwidth, 3dB point.

iv. Study the effect of following on the gain for:

 Emitter resistor (RE)

 Bypass Capacitor (CE)