02.

I1 20

DE IERMUNATION OF HALL C0-EFFICIENL.

OFA SEMICONDUCTOR
We know dht Staic
magnelic field has no efeet
On the
charges they qre in motion. When ehanggs
flow, a magneit unless
field divedted perpendieular Jo,, the
direction ot Hux rodutes o muaally penpenaicular
toveo on h charges. When this habpers, elchront and
hol nill be
in ur separaked b Poiite foyees. They il
produce an electric feld CEn) Hkich dehends
On the Cross poduc ot
Qnd the curreit magnelie intenity CH)
densiky ) .
E-R(xA)
R is ealled Hall coeticient. Now eane Considor a
borsemiConductor with, ts oimeni onc x,y and 2
ais.LeF J be direeked olong and Halong 2.
then En will be atong y Axis.
In general Hall volfage no a near funchion of
appled magnehc 4ield, has the Hall coetieient
applied
is net qendrally Consrant but a tuncion ot the
opplied magndtie relad.

The
The WOYKIN formula s R T H

T s current flowing through Ahe sSemiconductor.

tis the hiekheas of the sSemiConductor
"Vis Hall voltage
Thvckness OThe » sevconotuc or = 0.5 mm Csup.lies)
 02. tl 2021

CTaph SD

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 02, 2021

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2257-1296
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 02. H20 24
LTahle=TT
Experimental KeLult: Catthyation Curve dala table
-

ProCeduTe- monqneizm ield vs CUYYeh.

. Magheti zing current (Ap)|Hagneit Field a s )
No. (Tesla2
0.148
2 2 0. 296
O.445
0.h93
.741
Table-2
Hall cuTYEnHall Volto 9 data at constan magheic
feld Procedure;- Hall effect setup
Telal
Magnetc field 0.515 neess, Magnehzing Curent-3.5 A
Thuickness of the Semu Conductor =
0. 5 mm

|Mogneti2in| Haanehe freld Hall urrent(I)|all Voltap VA)|

Curren CmA)
Camp) CmV)
20.13
30.19
2 40.26
2.h 50.32
3.5 0.515 3 So.39
3.6 70.45
0.52
90.5 8
5 100.64

Calculahon AV
We kno, RIH H
the laraph
-2 1 Ne gok,
hoom
AVH=0x 0.5 mV

ATH = 20x O.0F5 mA

=
O h mm
 02.-20
Ond om the graph -1 We
qots
H= 0.51l5 Gaus Tesla

8 Here
40X 6:6 XIDX0.5 x10
p
20X0.05 X1o xo.55 X m/7

0.019 .m/T
Concluson The experimantal Valuue of Hal
Coettieient is fi9d F .(0.0/99)n.m/T.