Ex 1 Review on Poly Gate MOSFETs

1) Polysilicon usually has higher resistivity than equivalently doped single crystalline silicon. Why?
2) Poysilicon rather than aluminum is used as gate in MOSFETs . Why?
3) Poly-gate is self-aligned technology while aluminum-gate is not. Comment.
4) It is not practical to grow crystalline silicon gate over the gate oxide. Why?
5) Poly-gate MOSFETs are faster than aluminum-gate MOSFETs with the same channel length. Explain.
6) Poly-gates can be depleted under the gate-bias effect. Is this a problem? Why?
7) Changing the poly-doping level changes the work-function difference between bulk and gate. Consequently the
MOSFET drain current is affected. Explain.
8) Starting wafer diameter increases from few inches to 18” today. The number of defects per wafer drastically
decreases from say 10 to 1 (or even less). How can this affect the chip fabrication yield and cost per chip?. (Yield
= working chip count / total chip count).
9) Mask aligners’ mechanical misalignment error for a single mask may cause a yield of 99 %. What is the yield if
30 masks were used to terminate a chip fabrication?
10) Define the following abbreviations used in any layout editor: DRC, LVS, and PEX. What are the outcomes of
these tools?