Ain Shams University ICs Technology

Faculty of Engineering ECE-482

Electronics & Communications 4th Year
Engineering Dept. (ECE) Fall 2021

Sheet 4: Doping

I. State whether the following statements are true or false, give reasons and use
neat sketches wherever possible.

a) Boron and phosphorus diffuse relatively slower, while arsenic and antimony diffuse much
more quickly.
b) Pre-deposition is carried out under constant surface concentration (limited source),
whereas drive-in is done under constant dose (infinite source).
c) A layer of patterned PR or SiO2 can serve as a mask against the implanted dopants.
d) Most implanters implant the ion beam perpendicular onto the wafer.
e) The higher the implantation energy the deeper the penetration and the narrower the
distribution.
f) Channeling is reduced for higher doses.

II. Complete the following statements.

a) . . . and . . . is carried out in a high temperature furnace tube made of quartz.

b) Diffusion is usually carried out in two steps: … and …
c) Modern CMOS and BiCMOS processes require more accurate control of . . . and . . . than
conventional diffusion techniques can achieve.
d) Buried layers can be done by . . . or . . . followed by diffusion.
e) The acceleration potential controls . . . whereas the beam current and time of implantation
determine the . . . .
f) The upper limit to the amount of a given impurity that can be absorbed by Si is called. . .

III. Make the following comparisons; arrange your answers in a table.

a) Diffusion and ion implantation concerning cost, temperature, dimension control, profile
control, lateral effect, processing time, barrier, solid solubility dependence and damage.
b) Substitutional and interstitial diffusion concerning mechanism, diffusion rate, activation
energy and dopant materials (examples).

IV. Sketch the ion implanter showing its parts and explain briefly the function of
each part. If the selected ions (+ve charge) mass to charge ratio (m/q) is 2 x
10-7 kg/C, and the setup has fixed R and Vext of 0.5 cm and 30 KV respectively.
a) What is the velocity v, of the selected ions as it go out from plasma chamber.
b) Calculate the value of B and determine its direction (inward x or outward . the page)
that passes the selected ions. Draw the trajectory of an ion that has a much higher mass
to charge ratio.

1
V. In a typical CMOS process.
A Boron dose of 5x1013 cm-2 is implanted into 5x1015 cm-3 n-type Si at 100 keV.
Find the junction depth Xj. After the implantation, an annealing step is performed
at 975o C for 60 minutes. Calculate the junction depth Xj (after annealing) given
that Boron solid solubility at 975o C is 3.5x1020cm-3, diffusion constant is 1.5x10-
14
cm2s-1 at 975o C.
Hints:

Figure 1 Projected range and Projected/transverse straggle for different energies

Best Wishes
2 Prof. Hani Fikry