Karun Rawat,

Mohammad S. Hashmi,
and Fadhel M. Ghannouchi

Double
the Band
and
Optimize © DIGITAL STOCK 1996

T
he emergence of increasing multifunction-
ality and high data rate advanced wireless
standards, such as WiMAX and LTE-ad-
vanced, requires communication systems
capable of operating at multiple frequen-
cies simultaneously. This situation has led to scenarios
where the radios with the ability to function at several
distinct frequencies are required. Seamless transition
from one existing standard (e.g., 3G) to upcoming stan-
dards (e.g., 4G) with backward compatibility is also a
motivating factor for the deployment of multiband ra-
dio architectures. In principle, the design of multiband
power amplifier (PA) is one of the most challenging as-
pects in any multiband radio considering the trade-off
required in terms of efficiency and linearity.
Advanced wireless standards transmit signals
with high peak-to-average power ratios (PAPRs) [1],
which require the PA to operate in output power back-
off (OPBO) mode. As a consequence, the overall dc to
RF power conversion efficiency is degraded. Addi-
tionally, to minimize adjacent channel interference in
order to maintain the high quality of service, the PA
operating points are pushed further into OPBO region,
which subsequently sacrifices the dc to RF conversion
efficiency. The Doherty PA (DPA), reported almost
eight decades ago [2], overcomes this concern [2]–[6]
and has seen increased interest from both academia
and industry due to its high linearity and efficiency
[7]–[13].
Digital predistortion (DPD) has been a viable choice
for linearization of reconfigurable transmitters and
combines well with the DPA to realize highly efficient
and highly linear transmitters for energy efficient
communication systems [14], [15]. Multiband DPA
with DPD as the linearization technique is a promising
solution for multiband reconfigurable energy efficient

Karun Rawat, Mohammad S. Hashmi, and Fadhel M. Ghannouchi are with the
iRadio Lab, University of Calgary, AB, Canada.
Mohammad S. Hashmi is also with IIIT-Delhi, New Delhi, India.

Digital Object Identifier 10.1109/MMM.2011.2181449

Date of publication: 9 March 2012

March/April 2012 1527-3342/12/$31.00©2012 IEEE 69

 communication systems. Recently there has been DPA are not based on the Monzon transformer, shown
deployment of commercial dual-band base stations in Figure 1(d), as the impedance transformation ratio
[16]–[18] which has renewed interest in the design of in such a transformer depends on the load impedance
dual-band DPAs [19], [20]. This article focuses on the presented at one end of the transformer [26], [27]. In the
design methodologies and performance optimization case of the DPA, the impedance seen by transformer ZrC
strategies of dual-band DPA. in Figure 1(a) continues to change with the drive level;
this results in a changing impedance transformation
Dual-Band Doherty Power Amplifier ratio [19] and, as a result, ZC cannot achieve the desired
A typical block diagram of a dual-band DPA is given in optimal condition given by (1). In order to overcome
Figure 1(a). In principle, a simple replacement of each this issue, transformers T1 and T2 are designed using
component of the conventional single band DPA into either the Pi-type or T-type quarter-wave dual-band
their dual-band counterparts results in a dual-band transformer.
DPA [19], [20]. In principle, the load impedances ZC and ZP seen by
The dual-band components are designed using stub- dual-band carrier and peaking amplifiers, respectively,
loaded T-type or Pi-type dispersive structures [21]–[23]. in Figure 1(a), and given by (1) and (2), are similar to
Transformers T1 and T2 in Figure 1(a) are dual-band the corresponding single-band DPA configuration if
quarter-wave transformers that can be realized by all harmonics of output carrier and peaking currents
stub-loaded dispersive structures [21]–[23]. The archi- are shorted and only dc and fundamental components
tecture reported in [19] utilizes a Pi-type transformer, of the current exist [4].
shown in Figure 1(b), whereas the T-type transformer,
depicted in Figure 1(c), was employed in the archi- 2
ZT2 vin, max
tecture reported in [20]. The transformer T3, shown in 0 , vin ,
ZL 2
Figure 1(a), does not need to be a quarter wave long ZC 5 e Z2T2 vin, max (1)
and can be realized using any dual-band impedance , vin , vin, max
IP 2
transformer, such as Chebyshev transformer [24], [25] ZL a1 1 b
IC
or Monzon transformer [26], to transform 50 V to ZL
regardless of the phase shift at the two frequencies. For vin, max
` 0 , vin ,
example, the dual-band DPA reported in [19] employs 2
ZP 5 µ , (2)
a Monzon transformer for this purpose. It should be IC vin, max
ZL a1 1 b , vin , vin, max
noted that transformers T1 and T2 in the dual-band IP 2

Dual-Band
Carrier PA
IC
ZC ZC′
T2: Dual-Band
ZT2 Ω IC′
±90° at f1, f2
I/P

50 Ω T1: Dual-Band T3: Dual-Band O/P

50 Ω Any Impedance
±90° at f1, f2 Transformer 50 Ω
IP
Dual-Band ZP ZL
Peaking PA

(a)

ZS, θS at f1
ZS, θS at f1 ZS, θS at f1

jBstub jBstub
jBstub ZC1, θ1 at f1 ZC 2, θ2 at f2

(b) (c) (d)

Figure 1. (a) Block diagram of dual-band DPA, (b) dual-band Pi-type quarter-wave transformer, (c) dual-band T-type
quarter-wave transformer, and (d) dual-band Monzon impedance transformer.

70 March/April 2012
where, ZT2 is the characteristic impedance of the dual-
band quarter-wave transformer and equals 50 V for
load modulation factor of 0.5 [4]. ZL is the load seen
at the junction and equals half of the optimum load of
the carrier and peaking amplifier for maximizing their
output power [4].
A simple replacement of single-band components
with the corresponding dual-band components does
result in a dual-band DPA, but the performance
obtained from such an architecture is sub-optimal
due to several inherent issues. For example, (1) and
(2) require that the peaking amplifier provide enough
current at maximum drive level to fully modulate the
load of the carrier amplifier which is not practically
achievable even in standard single-band DPA config-
urations [10], [11]. In order to overcome this problem,
unequally sized transistors are used [8], [9]; alter-
natively, an uneven input power splitter with more
power drive to the peaking amplifier is used in the
case of equally sized transistors [10], [11]. Ideally, the
latter solution seems more promising, as it permits the
design of identical matching circuits for both the car-
rier and peaking amplifiers [8]. To avoid any leakage
of carrier current into peaking path during low power
operation, an offset line is used [7]–[10] in the peak-
ing path to provide an effective open circuit condition
given by (2). However, a phase-offset line in the car-
rier path ensures that the carrier PA will see 2Zopt in
the low power region [7].
The optimization strategies employed in the design
of a single band DPA are not directly applicable to the
dual-band DPA because typical characteristics such as
transconductance, gain, and optimum output imped-
ance of an active device vary with frequency, resulting
in different performance at two frequencies of opera-
tion. For example, the gain (transconductance) of a
device is different with varying classes of operation
(different bias condition), as well as with frequency of
operation, resulting in active load-modulation that var-
ies with frequency. Therefore, realization of a dual-band
DPA with optimized performance requires taking into
account these effects when designing dual-band passive
components such as the dual-band input splitter, offset
lines, and matching and load modulation circuits. This
pushes the design of dual-band circuitry beyond the
conventional design approach. For example, the dual-
band unequal input power splitter may require arbitrary
power division ratios at the two different frequencies of
operation. In the conventional approach, these circuits
can be designed for equal or unequal power division
between the ports, but the power division ratio remains
the same at the two operational frequency bands.
Design Techniques for Dual-Band
Doherty PA Components
The dual-band DPA architecture can be realized with the
replacement of each component of a conventional DPA
March/April 2012
Dual-Band
Input Output Load
Phase
Splitter Offset Lines Modulator/
Combiner
Dual-Band
Carrier PA
I/P
Tranformer 1
Tranformer 2
O/P
50 Ω 50 Ω
Dual-Band Z22, P
Preaking PA Junction A
Figure 2. Schematic of dual-band DPA with Pi-type
dispersive structure used as input splitter, Doherty
combiner, and phase offset lines [45].
with a corresponding dual-band component. A generic
schematic of a dual-band DPA utilizing Pi-type disper-
sive structures is shown in Figure 2. The realization of an
optimal dual-band DPA requires the design of appropri-
ate dual-band offset lines, an input branch-line hybrid
with two distinct power division ratios at two frequency
bands, dual-band PAs, and Doherty combiner.
Design of Dual-Band Input Splitter
The fundamental components of the output currents
of the carrier and peaking amplifiers depend on their
respective conduction angles, which depends on the
bias points and class of operation [10], [11], [28]. Thus,
in order to achieve equal output current at satura-
tion, an uneven amplifier drive in favor of the peak-
ing amplifier should be applied. Figure 3 supports
this concept and demonstrates that uneven power is
required to drive the peaking and carrier PAs for opti-
mal Doherty operation.
The power division ratio, s, of the input splitter can
be estimated from (3) [10]
Ifund., C 2
s5 a b , (3)
Ifund.,P 1 1 2 Q 2
where Ifund., C and Ifund., P are the respective fundamen-
tal components of the output currents of the carrier and
peaking amplifiers. Q is the portion of voltage where
the peaking amplifier starts to conduct and is depen-
dent on the bias of the peaking and carrier amplifiers.
As described earlier, the transconductance of the
high power nonlinear active device varies with fre-
quency; this, in turn, leads to frequency- dependent
gain characteristics and, therefore, two different
drain currents at two different frequencies. As a con-
sequence, the required power division ratio given by
(3) changes with frequency and requires an unequal
power divider with two distinct power division ratios,
s1 and s2 in (3), at the two frequencies for proper load
modulation in dual-band DPA design.
71

Peaking (Even)
II,C Peaking (Uneven)
Fundamental Current Carrier
II,P
2 biased at Class-AB operation represents the carrier ampli-
0 0.5
Normalized Input Voltage Amplitude
(a)
300
ZC(Uneven)
250 ZP(Uneven)
Load Impedance (Ω)
ZC(Even)
200
ZP(Even)
150
100
50
0 mon practice to connect the dc supply to an RF shorted
0.5
Input Voltage Amplitude
(b)
Figure 3. Operational characteristic of Doherty amplifier
with even and uneven power drive [10]: (a) variation of
fundamental current with the drive level and (b) variation
of load impedances with input drive voltage.
Conventional dual-band hybrids [21], [22], designed
using dispersive T- or Pi-type structures, can be custom-
ized to provide uneven power division ratios at two
frequencies of operation. Such dispersive structures
present two different characteristic impedances at the
two frequencies while having 90° phase characteristics
at these two frequencies [29]. For the equal-power divi-
sion in a conventional branch-line hybrid, the branches
are realized by using quarter-wave transmission lines
of characteristic impedance of 50 V and 35.35 V [21].
To obtain unequal-power division, these transmission
lines should possess different values of characteristic
impedances depending on the power division ratio. In
other words, for a dual-band power divider with differ-
ent power division ratios at the two different frequen-
cies, the quarter-wave transmission lines should have
dual-band/dual-impedance quarter-wave characteris-
tics at the two frequencies of operation. The underlying
principle in such dual-band hybrid design is the use
of the frequency- dependent image impedance char-
acteristics of stub-loaded dispersive structures for the
creation of dual-band/dual-impedance transformers
at two frequencies of operation [29]. Moreover some
work has been done to further improve these structures
in terms of performance and miniaturization [30], [31].
72
Dual-Band Power Amplifier
Design of a dual-band PA requires dual-band input
and output matching in order to match the 50 V load to
the two arbitrary complex impedances. These complex
impedance values at the two desired frequencies can
either be obtained from the device data sheet or deter-
mined by a load-pull setup [32]–[35]. This dual-band PA
fier in dual-band DPA architecture. The same dual-band
PA is biased in class C operation for the peaking amplifier.
1 Figure 4 shows a typical architecture of a dual-band PA.
Biasing and Stabilizing of Transistor
It is essential to bias and stabilize a transistor before
employing it in the design of dual-band PA using a
similar approach adopted in any conventional single-
band PA design [36]. A simple biasing circuit for an
RF PA includes an inductor that feeds dc to the tran-
sistor, but blocks ac leakage from the RF path. These
inductors exhibit substantial losses due to their low Q
factors, which are further lowered when high power
handling capacity is required. Therefore, it is com-
1
circuited 90° transmission line transformer, which is
effectively an open circuit at the end, connected to the
RF path [29], [36]. This transmission line behaves as
a low loss path for dc with minimal RF leakage. For
the dual-band PA design, this 90° transformer may be
dual-band with high characteristic impedance [36] and
can be designed using a T-type [21] transmission line
loaded with a stub at the center, as shown in Figure 4.
For such architecture, the design parameters are
characteristic impedances ZS,F and ZP,F and electrical
lengths 2u S,F and u P,F for series-loaded transmission
line and open-circuit loading stub, respectively. These
design parameters are linear functions of the desired
characteristic impedances and, therefore, can be eas-
ily computed for any higher transformer characteristic
impedances [21]. Once the transistor is biased via the
dual-band 90° transformer, a stability circuit can be
designed at the input.
Dual-Band Matching Topology
A matching circuit in any amplifier can be seen as a
two-port network that provides a complex impedance
when terminated by a standard load impedance of
50 V. This complex impedance is the required value of
impedance seen by the device in order to behave opti-
mally in terms of performance metrics such as gain,
output power, and efficiency.
In most cases, the required complex loads seen by the
device at different frequencies of operation can be dif-
ferent and can have arbitrary values. Thus, a dual-band
matching network should provide different impedances
at the two frequencies when terminated by a 50 V load.
There have been reports of numerous matching tech-
niques for dual-band PA applications [24], [25], [29],
March/April 2012
 Dual-Band
Dual Band
Quarter Wave Transformer
for DC Feed

,F, θS,
ZS,F ,F at f1
S,F ,F, θS,
ZS,F ,F at f1
S,F
Drain

F at f1
Bias
Gate

P,F
Biass
ZP,FF, θP,
Dual-Band
dc Feed

Data-Band
D Output
Data-Band Matching N/W
Input 50 Ω
Matching N/W G
50 Ω S
dc Block
Stabilizing
Circuit

Figure 4. Proposed architecture for dual-band carrier and peaking amplifiers.

[37]–[45]. The dual-band matching technique [37], [38]

does not fulfil the requirements of distinct impedances
at two different frequencies and, therefore, has limited
Dual-Band 90° Dual-Band
usefulness in the design of high performance dual-band Transformer
Stub
PAs, while the dual-band matching technique utiliz- L J T
ing transmission line based impedance transformers jB(f1),jB(f2)
Y (f ) YJ (f) G0
is only suitable for matching of real impedances [24], ZT(f1) at f1
[25]. Alternative dual-band matching techniques [39], ZT(f2) at f2
±90° at f1,f2 50 Ω
[40] are transmission line based and are more suitable
Y(f1) = G(f1) + jB(f1)
for harmonics matching. The matching techniques
Y(f2) = G(f2) + jB(f2) YJ (f1) = G(f1)
described in [41]–[45] are capable of providing matching YJ (f2) = G(f2)
for two different complex loads to 50 V at two distinct L′ J′ T′
frequencies, but their applications are limited to certain (a)
frequency ratios and have similar problems associated
with stub loaded structures in obtaining realizable val- Y(f1)
ues of characteristic impedances of transmission lines 0.5 2
[29]. In addition, the design equations and methodology
reported in [41] are complex and require a higher order
jB(f1)
of numerical optimization and, as a consequence, find 0.2 5
convergence only for selected frequency ratios and com-
plex input impedances. ZT(f2) ZT(f1)
The dispersive stub-loaded transmission line cir- 0 1 inf
0 0.2 0.5 2 5
cuit [29] is another alternative for achieving dual-band
matching for distinct complex impedances. This tech-
nique utilizes the frequency varying image impedance –0.2 jB(f2) –5
of such circuits along with their dispersive character-
istics to obtain a dual-band/dual-characteristic imped-
ance quarter-wave transformer that has two different –0.5 –2
characteristic impedances at two different frequencies, Y(f2)
with 90° or its odd multiple as electric length at the two
specified frequencies. The key element of this tech- (b)
nique is a dual-band/dual-impedance quarter-wave
transformer that simultaneously transforms the 50 V Figure 5. A dual-band matching network design:
load, seen at the reference plane TTr in Figure 5(a), to (a) block schematic and (b) operation represented in smith
the respective real conductance parts, G 1 f1 2 and G 1 f2 2 , chart [29].

March/April 2012 73
 of the required complex impedances, Y 1 f1 2 and Y 1 f2 2
seen by the active device at frequencies f1 and f2. In
such a technique, the first step is to design a dual-
band impedance transformer to obtain the required
values of the resistive components of Y 1 f1 2 and Y 1 f2 2
and then realize the corresponding imaginary parts of
the required Y 1 f1 2 and Y 1 f2 2 using the dual-band/dual-
susceptance stub, as shown in Figure 5(a). The design
steps employed in this technique are further clarified
by the pictorial depiction in Figure 5(b).
Another dual-band matching topology is shown
in Figure 6. In this topology, the characteristic imped-
ances of the dual-band/dual-impedance quarter-wave
transformer are synthesized so that when the trans-
former is terminated by certain admittances YJ 1 f1 2 and
YJ 1 f2 2 [at reference JJr in Figure 6(a)] at the two fre-
quencies with the real conductive part as G0 5 1/50 V,
the circuit will exhibit the desired input admittances,
Y 1 f1 2 and Y 1 f2 2 , at the two frequencies [45]. The admit-
tances YJ 1 f1 2 and YJ 1 f2 2 are realized by adding certain
Dual-Band
90° Dual-Band Stub
L Transformer J T junction admittances (5) [reference point JJr in Figure
jBJ (f1), jBJ (f2)
Y(f ) ZT(f1) at f1 YJ (f )
ZT(f2) at f2
±90° at f1,f2
Y(f1) = G(f1) + jB(f1) YJ (f1) = G0 + jBJ (f1)
Y(f2) = G(f2) + jB(f2) YJ (f2) = G0 + jBJ (f2)
L′ J′ T′
(a)
Transformer for
Dual-Band
50 Ω to YJ (ff1) and YJ (ff2)
Stub
Conversion at f1 and f2
(b)
Figure 6. An alternate approach for dual-band matching
network design: (a) block schematic and (b) photograph of
the prototype. From [45].
74
dual-band/dual-susceptance stubs to the terminat-
ing impedance of 50 V. In this technique, the first
step involves the synthesis of the required values of
the characteristic impedances, ZT 1 f1 2 and ZT 1 f2 2 , and
the corresponding values of the susceptances, jBJ 1 f1 2
and jBJ 1 f2 2 , [at reference JJr in Figure 6(a)]. The corre-
sponding values of the characteristic impedances and
susceptances are then realized using a dual-band/
dual-impedance quarter-wave transformer and dual-
band stub, respectively, as shown in Figure 6(b). The
values of characteristic impedances ZT 1 f1 2 , ZT 1 f2 2 and
susceptance values jBJ 1 f1 2 , jBJ 1 f2 2 required to realize
the desired input admittances Y 1 f1 2 and Y 1 f2 2 can be
obtained using (4).
1 ZT1 at f1
YJ 1 fi 2 5 , where ZT 1 fi 2 5 e ,
1 ZT 1 fi 2 2 2 Y 1 fi 2 ZT2 at f2
(4)
where i = 1 and 2 represents first and second fre-
quency (f1 and f2), respectively. The real and imagi-
nary parts (the conductive and susceptive parts) of
(4) can be compared to gain an understanding of the
6(a)] and the required characteristic impedances of
G0 the dual-band/dual-impedance quarter wave imped-
ance inverter (6) [45]
50 Ω
2B 1 fi 2
Bj 1 fi 2 5 , (5)
50 # G 1 fi 2
1
ZT 1 fi 2 5 , (6)
Å 50 # G 1 fi 2 " 1 GJ 1 fi 22 2 1 1BJ 1 fi 22 2
(5) and (6) are then used for the design of the imped-
ance transformer and stub in order to realize the
desired dual-band impedance matching.
The dual-band/dual-impedance quarter-wave
transformer in both the matching topologies, shown in
Figures 5 and 6, can be realized using either a T-type
or Pi-type structure where the dispersive characteris-
tic 1 u T 2 and the image impedance (ZT) are shaped in
order to obtain u T 5 90° with two distinct characteristic
impedances at the two desired frequencies of opera-
tion. However, there are issues of realizability of such
dispersive structures in terms of the widths of the stub
and loaded transmission lines [21], [29] and, therefore,
the choice is dependent on the required frequency
ratios. In addition, the dual-band/dual-susceptance
stub in these topologies can be implemented with
impedance buffer technique [39], [40].
As an example, the topology shown in Figure 6
was used in the design of the matching circuit for
a standard 10 W GaN HEMT operating in two fre-
quency bands, 1.96 GHz and 3.5 GHz, for both the
peaking and carrier amplifiers of a dual-band DPA
[45]. The prototype and the corresponding results
March/April 2012
for this dual-band PA in Class-AB and Class-C are
shown in Figure 7 [45]. The results indicate that the Dual-Band Biased and Dual-Band
gain of the peaking amplifier is lower compared to Input Matching Stabilized Output Matching
Network Transistor Network
the carrier amplifier. This is due to the class C peak-
ing amplifier possessing a lower transconductance
when compared to the carrier amplifier (class AB). In
addition, the peak drain efficiency and power-added
efficiency (PAE) of the carrier and peaking amplifiers
at 1.96 GHz is slightly higher than at 3.5 GHz; this is
due to the relatively larger losses encountered at the
higher frequency.
(a)
Dual Band Phase Offset Lines
The phase shift required to present an open circuit at 20 80
the output of the peaking amplifier at low signal lev- 18 70

Drain Efficiency (%)

els can change with frequency. Therefore, depending 16 60
on the output impedance of the peaking amplifier at

Gain (dB)
14 50
the two frequencies, the phase shift requirement from
12 40
the phase offset lines can be quite different at these
10 30
two frequencies. Figure 8(a) shows the output imped-
8 20
ances of the peaking amplifier (Z22,P in Figure 2) at
6 10
two different frequencies, which are represented
4 0
at different points in the Smith-chart of Figure 8(a) 31 33 35 37 39 41
(Z22,P 1 f1 2 and Z22,P 1 f2 22 . A 50 V transmission line can Pout (dBm)
rotate these impedance values to a higher range (b)
(achieving effective open-circuit conditions) along
22 70
constant gamma circles as shown in Figure 8(a). This
50 V line should be of different electrical lengths at 20 60

Drain Efficiency (%)

frequencies f1 and f2, such that Z22,P 1 f 2 is rotated 18 50
Gain (dB)

by FP 1 f1 2 and FP 1 f2 2 , respectively. For a standard 16 40

transmission line segment, the electrical length is a 14 30
linear function of frequency. For example, if n is the 12 20
frequency ratio of the two chosen frequencies f1 and
10 10
f2, then the electrical length at f2 will be n times the
8
electrical length at f1. Since, the values of FP 1 f1 2 and 0
30 32 34 36 38 40 42
FP 1 f2 2 depend on peaking amplifier behavior, the Pout (dBm)
required electrical lengths of transmission line can (c)
have any arbitrary value at the two frequencies, and
Gain Carrier
should be achieved independent of the frequency
Drain Efficiency Carrier
ratio of the two frequencies. Drain Efficiency Peaking
Assuming that the impedance Z22,P 1 f 2 is effec- Gain Peaking
tively open circuit in back-off (low power region), the
carrier amplifier will see 100 V which appears due
Figure 7. Performance of dual-band PA as carrier and
to the 50 V load transformation by the two quarter peaking amplifier: (a) photograph, (b) at 1.96 GHz, and
wave transformers of 50 V and 35.35 V in the load- (c) at 3.5 GHz [45].
modulation circuit. When this 100 V load appears at
the output of carrier amplifier matching network, the
offset line in the carrier path ensures that the opti- offsets required by investigating the PAE contour as
mum impedance corresponding to the optimum PAE shown in Figure 8(b). These contours are obtained by
will be seen by the device in the carrier amplifier at a separate load-pull simulation for a carrier ampli-
back-off. The operation of such phase offset in the fier along with its matching networks for the back-off
carrier path is shown in Figure 8(b), where a 100 V power region, and various PAE contours are plotted
load is shifted to the optimum PAE points (point A on as shown in Figure 8(b) [45]. A 50 V dual-band phase
best PAE contour of frequency f2 and point B on best offset line is designed to rotate the 100 V load along
PAE contour of frequency f1). The optimum load- gamma circles by Fc 1 f1 2 and Fc 1 f2 2 in order to obtain
ing condition also varies with OPBO [44], [45] and, the optimum PAE points at frequencies f1 and f2 as
therefore, is essential to first determine the best phase shown in Figure 8(b).

March/April 2012 75
 phase offset delay lines do not have any effect at
saturation and therefore overall matching condi-
Z22,P(f1) tions remain intact.
0.5 Z22,P(f2)
φP(f2) φP(f1) Dual-Band Load-Modulation Circuit
The load-combiner consists of 50 V and 35.35 V dual-
0.2 5 band quarter-wave transformers that are similar to
the branches of dual-band input splitter. Because of
this, the T-type and Pi-type transformers, shown in
0 inf Figure 1(b) and (c), can be used in the design of dual-
0 0.2 0.5 1 2 5
band load combiner circuit. It is interesting to note
Effectively that a dual-band/dual-impedance transformer can
–0.2 Open Circuit –5
also be used in the design of a dual-band load mod-
ulation circuit with two different load-modulation
factors at two frequencies. This can provide peak
–0.5 –2 efficiencies at two different back-off regions at two
different frequencies of operation. Such a Doherty
(a) architecture can provide better average efficiency
with signals of different PAPR, while operating at
PAE Contour at f1 two different frequencies. The design technique of
PAE Contour at f2 such a load-modulation circuit at individual fre-
0.5 2 quencies can be obtained from [46], [47], which
PAEOPT-10%
requires two different impedances of the quarter
PAEOPT-5%
PAEOPT wave transformers of the load-modulation circuit at
0.2 5 two different frequencies.
100 Ω
φC(f2) Application of Stub-Loaded Structure
0 0 0.2 0.5 1 5 inf
B
for Dual-Band Circuit Design
φC(f1) Stub-loaded Pi- or T-type structures can be repre-
–0.2 –5 sented by symmetric, reciprocal and lossless two-
PAEOPT port networks that have image impedance and phase
PAEOPT-5%
PAEOPT-10% characteristics that can be shaped with respect to
–0.5 frequency. The ABCD network parameters of these
–2
circuits can be chosen to obtain the desired image
impedance and propagation function. These two-port
(b) networks can emulate a transmission line with a char-
acteristic impedance and electrical length correspond-
Figure 8. Dual-band phase offset delay line operation: (a) ing to the image impedance and image propagation
peaking path and (b) carrier path [45]. function of the two-port networks, respectively [48].
Since, the image impedance and propagation function
characteristics of these two-port networks depend on
Each phase offset line adds corresponding phases in the design parameters of the loaded line and the stub
their paths; hence, an additional 50 V dual-band phase loading it, they can be customized to achieve dual-
offset line is added at the input to compensate for the band characteristics [21], [22]. For example, the dual-
phase difference in the two paths. It is not always pos- band/dual-impedance quarter-wave transformer
sible to achieve the optimum load, PAEOPT in Figure described before has two different image impedances
8(b), with the phase offset line in the carrier path (e.g., but the same electrical length at the two frequencies
Point A is on the PAE contour which has 5% less PAE of operation [29].
as compared to optimum value at frequency f2). Hence, Alternatively, one can also use Pi- or T-type struc-
one can also think of using similar lines in both the car- tures with a multisection stub loading the trans-
rier and peaking paths, depending upon the reasonable mission line to realize a quarter-wave transformer
value of PAE that can be achieved at back-off, thereby with two different characteristic impedance values
avoiding any additional phase offset line compensa- at two different frequencies. Figure 9(a) shows the
tion at the input [45]. Pi-type structure loaded with a multisection stub
It is also worth mentioning that at saturation, loading the transmission line. Figure 9(b) represents
the load seen by each carrier and peaking ampli- the equivalent two-port network in terms of ABCD
fier is 50 V; the addition of these 50 V dual-band parameters.

76 March/April 2012
 The multisection stub loading technique offers
greater flexibility and realizability when compared
ZS, θS at f1
with the single section open and short stub loading
technique. In a single section stub, a designer must jB(f1) jB(f1)
obtain stub parameters by simultaneously solving the
jB(f2) jB(f2)
design equations of the loaded transmission line and
the stubs as they are interdependent [21]. This results
in only a few feasible design parameters that can be
obtained for a desired specification and frequency
ratio. The major limitation of the single stub loading
technique is the requirement to realize high impedance (a)
values of transmission line and stub for the desired
performance [21], [29]. The multisection stub, however, I1 I2
allows for the independent selection of stub and loaded Two-Port
transmission line parameters and, therefore, gives a + Network +
large number of realizable solutions for a given specifi- A B
V1 V2
cation and frequency ratio. Moreover, this structure can
C D
also be used to design a 50 V dual-band phase offset
– –
line with different phase characteristics at two frequen-
cies while keeping the same image impedance of 50 V
at these frequencies. Application of such network is Symmetric: A = D,
Reciprocal: AD-BC = 1
already stated as a dual-band phase offset lines in DPA
operation [45]. (b)

Design 1: Dual-Band Phase Offset Line Figure 9. Dual-band multisection stub loaded Pi-type
For the design of dual-band phase offsets lines, the dispersive structure: (a) circuit schematic and
ABCD parameters of Figure 9(a) are modified in a (b) equivalent two-port network representations.
manner that the same image impedance of 50 V with
different effective electric lengths u T 1 f1 2 and u T 1 f2 2 at 0 sin u T2 0 0 sin nu S 0
f1 and f2 can be obtained. For frequency ratio n, (S7) in 5 5 M, (7)
0 sin u T1 0 0 sin u S 0
“Design Equations for Dual-Band Offset Line” can be
rearranged as: where M is the ratio of two sine functions.

Design Equations for Dual-Band Offset Line

The ABCD matrix of Pi-type structure, depicted in ZS2
Figure 9 (a), is given as [45]: 512 k 1 f2 2 2 12k 1 f2 2 cot nuS at f2, (S4b)
ZT2

cos uS 2 BS ZS sinuS jZS sin u where, Z T is effective characteristic impedance at

£ 1 § two frequencies and k is defined as [45]
j sin uS 112 ZS2 B2S 12 ZS BS cot uS 2 cos uS 2BS ZS sin uS
ZS
(S1) k 1 f1 2 5 ZS BS 1 f12 at f1, (S5a)
k 1 f2 2 5 ZS BS 1 f2 2 at f2. (S5b)
The overall effective electrical length and charac -
teristic impedance of the loaded structure can be
Similarly, (S2) can be rearranged as
derived from (S1) as
A1D k 1 f1 2 sin u S 5 cos u S 2 cos u T1 at f1, (S6a)
cos u T 5 5 cos uS 2 BS ZS sin uS, (S2)
2
k 1 f2 2 sin nu S 5 cos nu S 2 cos u T 2 at f2. (S6b)
B 1
ZT 5 5 ZS . (S3)
ÅC Å 1 2 ZS2 B2S 12 ZS BS cot uS
Substituting corresponding values of k at f1 and f2
If n is the frequency ratio between f1 and f2, (S3) from (S6) in (S4), one can obtain
can be rearranged as [45]
ZS2 0 sin u T1 0 0 sin u T 2 0
512 k 1 f1 2 2 12k 1 f1 2 cot uS at f1, (S4a) ZS 5 ZT at f1, ZS 5 ZT at f2. (S7)
ZT2 0 sin u S 0 0 sin nu S 0

March/April 2012 77
 Expansion of Sinusoidal Ratio
sin 1 nu S 2 n2n3 n52n A1
5 A0 1 A1u 2S 1 A2u 4S 1 A3u 6S 1 A4u 8S 1 c Amu 2m
S A0 5 n, A1 5 , A2 5 1 ,
sin 1 u S 2 3! 5! 3!
2p
where, 0 , u S , . (S8)
n n2n7 A1 A2 n92n A1 A2 A3
A3 5 2 1 , A4 5 1 2 1 .
7! 5! 3! 9! 7! 5! 3!
Expanding the sine series in each numerator and
denominator of (S8) and rearranging [45] yields (S10)

1 nu S 2 3 1 nu S 2 5 1 nu S 2 7 Since the coefficients corresponding to higher

nu S 2 1 2 1c
3! 5! 7! values of uS in (S10) tend to vanish rapidly, the
u 3S u 5S u 7S approximation up to eighth order on the right
5 1 A0 1 A1u 2S 1 A2u 4S 1 c2 au S 2 1 2 cb.
3! 5! 7! hand side of (S8) gives sufficient accuracy in
(S9) calculating uS.
The polynomial expansion in (S8) with coeffi -
Comparing each term of same order of uS in (S9), cient, given by (S10) can be used for solving uS for a
values of coefficients can be obtained as required value M.

be obtained using (S6), once

2.8 ZS is known. The design
n = 3,500/2,425 MHz
parameter BS at the two fre-
n = 3,500/2,140 MHz
2.4 n = 3,500/1,960 MHz quencies is then calculated
n = 1,960/850 MHz using (S5), once ZS and k 1 f 2
n = 2,140/850 MHz are known. The final step in
2
the design is to realize BS 1 f1 2
and BS 1 f2 2 which can be done
M (Ratio)

1.6 using dual-band multisec-

tion stub [29], [39], [40].
1.2 Figure 11 shows a design
example of a dual-band
phase offset line operating
0.8 at 1.96 GHz and 3.5 GHz,
providing insertion loss less
0.4 than 0.12 dB and return loss
–120 –100 –80 –60 –40 –20 0 20 40 60 80 100 120 greater than 35 dB at both
θS (Degree)
frequencies. It can be seen
from this figure that phase
Figure 10. Design curve for solving ratio of two sine functions, M, for different values of shifts of 58.87° and 163.2°
u and given frequency ratio n [45]. are achieved at 1.96 GHz
and 3.5 GHz respectively.
For values of u T1, u T2 and n, (7) can be solved ana- This offset line has been used in design of dual-band
lytically to obtain electrical length u S of the loaded DPA [45], which will be discussed as case-study in
line, as given in “Expansion of Sinusoidal Ratio.” For the next section.
simplicity, design curves shown in Figure 10, which
represents M for different values of frequency ratios, Design 2: Dual-Band/Dual-Impedance
can also be plotted using this analytical solution. Quarter-Wave Transformer:
These curves are used for obtaining electrical The idea of a dual-band/dual-impedance quarter-
length u S of the loaded line. It can be seen from Fig- wave transformer is to shape the image impedance
ure 10 that the maximum value that can be achieved characteristic to obtain two different impedances
for M in (7) is governed by the frequency ratio n [45]. ZT 1 f1 2 and ZT 1 f2 2 at two frequencies while achieving
The physical length corresponding to the electrical quarter-wave phase characteristics at these two fre-
length u S is calculated at frequency f1. Once the value quencies.
of u S are obtained, ZS can be calculated from (S7) for a Thus (S7) can be rewritten for the case of
desired value of ZT, which is 50 V in the present case. u T1 5 u T2 5 90° and ZT 1 f1 2 , ZT 1 f2 2 for two required im-
Similarly, the value of k 1 f 2 at the two frequencies can pedance as

78 March/April 2012
 0 180
Return Loss
Insertion Loss 130
–10 Phase Shift
Magnitude (dB) 80

Magnitude (dB)
–20 30
–20
–30
–70

–40 –120
–170
–50 –220
1,500 2,000 2,500 3,000 3,500 4,000 1,500 2,000 2,500 3,000 3,500 4,000
Frequency (MHz) Frequency (MHz)

(a) (b) (c)

Figure 11. Dual-band phase offset line as all-pass dual-band filter: (a) photograph, (b) insertion loss, and (c) phase response [45].

1 1 Figure 13(a) and (b) shows the effect of phase

ZS 5 ZT 1 f1 2 at f1, ZS 5 ZT 1 f2 2 at f2. (8)
0 sin u S 0 0 sin nu S 0 offset line of Figure 11(a) on the performance of car-
rier and peaking amplifiers [45]. In this situation the
One can obtain the following expression from (8): dual-band matching and input drive is identical for
both the amplifiers. The absence of phase offset lines
ZT 1 f2 2 sin 1 nu S 2
5` ` 5 M, (9) at 1.96 GHz reduces the efficiency by approximately
ZT 1 f1 2 sin 1u S 2
9% at 6 dB output power back-off. On the other hand,
where M is the ratio of two sine functions similar to at 3.5 GHz, the absence of an offset line in the peak-
one shown in (7). For given values ZT 1 f1 2 , ZT 1 f2 2 and ing path reduces efficiency by approximately 7.8%
n, (9) can be solved in a similar manner as (7) using and in carrier path by 3.4% at 6-dB output power
Figure 10 to obtain the electrical length u S of the loaded back-off.
line. Once the value of u S is obtained, the correspond- Figure 14 shows the effect of unequal-power divi-
ing value of ZS can be calculated from (8). sion in terms of load-modulation, gain and efficiency
The knowledge of ZS and u S enables the computa- in a typical DPA. The uneven power division ratio at
tion of the susceptance, BS, by rewriting (S2) for two 1.96 GHz is 0.5, whereas at 3.5 GHz the power divi-
frequencies f1 and f2 with condition u T1 5 u T2 5 90°: sion ratio is 0.75, feeding more power to the peak-
ing amplifier. In the case of equal drive, the current
1 ZS tan 1 u S 2221 at f1
BS 1 f 2 5 e . (10) contributions by the carrier and peaking amplifiers
1 ZS tan 1 nu S 22 21 at f2
The stub values at two differ-
ent frequencies are realized Carrier Amplifier Carrier Offset Line
using a dual-band/dual-sus-
ceptance stub [29].

Case Study:
RF Load
1.96 GHz/3.5 GHz Input Combiner
Dual-Band DPA
Dual-Band
As an example, a dual-band Input RF
DPA, shown in Figure 12, Coupler Output
operating at 1.96 GHz and
3.5 GHz for WCDMA and
WiMax, respectively, was 50 Ω
designed to demonstrate the
significance of various dual-
band components on overall Peaking Amplifier Peaking Offset
performance. The transistor Line
chosen was a standard 10 W
GaN HEMT from CREE [32]. Figure 12. Photograph of dual-band Doherty amplifier design example.

March/April 2012 79
 19 70 18 60

Drain Efficiency (%)

Drain Efficiency (%)
17 60 16 50
50

Gain (dB)
15 14

Gain (dB)
40
13 40 12 30
11 30
10 20
19 20
8 10
7 10
6 0
5 0 25 27 29 31 33 35 37 39 41 43
26 28 30 32 34 36 38 40 42
Pout (dBm)
Pout (dBm)
(a) (b)

Efficiency No Peaking Delay Line Gain No Peaking Delay Line Efficiency

Efficiency No Carrier Delay Line Gain No Carrier Delay Line Gain

Figure 13. Dual-band DPA performance [45]: (a) effect of dual-band offset line in the performance of dual-band DPA at 1.96
GHz and (b) effect of dual-band offset line in the performance of dual-band DPA at 3.5 GHz [45].

0.5
0.7

0.4 0.6
Output Current (A)

Output Current (A)

0.5
0.3
0.4

0.2 0.3

0.2
0.1
0.1
0.0 0
0 4 8 12 16 20 24 28 32 0 5 10 15 20 25 30 35
Input Power Drive (dBm) Input Power Drive (dBm)
(a) (b)

Carrier Current (Equal Input Drive) Peaking Current (Equal Input Drive)
Carrier Current (Unequal Input Drive) Peaking Current (Unequal Input Drive)

70 70
18 18
60 60
16 16
Drain Efficiency (%)

Drain Efficiency (%)

50 50
14 14
Gain (dB)

Gain (dB)

Peak Power 40 40
12 Peak Power
Extension 12
30 Extension 30
10 10
20 20
8 8
10 10
6 6
0 0
28 30 32 34 36 38 40 42 44 28 30 32 34 36 38 40 42 44
Output Power (dBm) Output Power (dBm)

(c) (d)

Drain Efficiency (Equal Input Drive) Drain Efficiency (Unequal Input Drive)
Gain (Equal Input Drive) Gain (Unequal Input Drive)

Figure 14. Effect of unequal power division: (a) Doherty load modulation in terms of output drain currents for 1.96 GHz
operation, (b) Doherty load modulation in terms of output drain currents for 3.5 GHz operation, (c) drain efficiency and gain
at 1.96 GHz, and (d) drain efficiency and gain at 3.5 GHz.

80 March/April 2012
 fore, their combined effects result in improved linearity
0 which can be seen in terms of the improved AM/AM
response in Figure 14(c) and (d).
–10
Figure 15 provides a comparison of a carrier to
–20 third-order intermodulation product ratio (C/IMD3)
Magnitude (dBc)

when equal and unequal power feed to the carrier

–30
and peaking amplifiers. It is evident that there is an
–40 improvement in C/IMD3 of approximately 10 dB
improvement of C/IMD3, with unequal drive around
–50
the OPBO range of 6 dB. In practical applications the
–60 goal is to achieve C/IMD3 performance better than
30 dBc and, therefore, with unequal power splitter,
–70
0 5 10 15 20 the required C/IMD3 improvement from DPD comes
OPBO (dB) around 20 dBc. This is a definite advantage over the
(a) case of equal input power splitter based Doherty as the
0 requirement for C/IMD3 in such a scenario from the
–10 DPD is 30 dBc.
–20
Conclusion
Magnitude (dBc)

–30 The state of art in dual-band DPA has been demon-

–40
–50
–60
–70
–80
0 5 10 15
OPBO (dB)
(b)
IMD3 Higher (Equal Input Drive)
IMD3 Lower (Equal Input Drive)
IMD3 Higher (Unequal Input Drive)
IMD3 Lower (Unequal Input Drive)
Figure 15. Linearity performances with unequal input
power drive: (a) performance at 1.96 GHz operation and
(b) performance at 3.5 GHz operation.
are not equal at saturation, as shown in Figure 14(a)
and (b), which results in improper load modulation.
However, with unequal power drive, the difference
between these currents at saturation is minimized,
resulting in proper load modulation. Therefore the
improvement in terms of peak power extension in the
unequal power drive case as shown in Figure 14(c)
and (d) can be attributed to due to the proper load
modulation.
Moreover, the average efficiency improvement is
restricted by the soft turn-on effect at the relatively
higher conduction angle [11]. This can be further opti-
mized by the gate bias of the peaking amplifier; never-
theless the main focus of these techniques has been to
improve linearity [11], [12]. The carrier amplifier, biased
in Class-AB, exhibits gain compression at high output
power levels whereas the peaking amplifier, biased in
class-C, exhibits gain expansion over this region; there-
strated with further considerations for optimizing
overall performance. Two main optimization strate-
gies are applied: using dual-band phase offset as an
all-pass filter and unequal-power division at the input
with distinct power division ratio at two frequencies
of operation. The performance improvement with
20 these optimization strategies is demonstrated with a
case study of a dual-band DPA operating at 1.96 GHz
and 3.5 GHz. The use of stub-loaded dispersive struc-
tures has been elaborated on in the design of various
dual-band components employed in the dual-band
DPA architecture. The dual-band DPA architecture,
in theory, can be achieved from direct replacement
of each single-band component with conventional
dual-band components. In practice, however, several
optimization strategies are needed to enhance the per-
formance of the designed dual-band DPA. This article
elaborated on some of the optimization strategies with
appropriate design examples to demonstrate the use-
fulness of these optimization strategies.
Acknowledgment
This work was supported by the Alberta Innovates
Technology Future (AITF), The Natural Sciences and
Engiineering Council of Canada, the Canada Research
Chair (CRC) Program.
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